CN107164736B - 电场导向下的小孔内壁真空离子镀方法 - Google Patents

电场导向下的小孔内壁真空离子镀方法 Download PDF

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CN107164736B
CN107164736B CN201710328936.0A CN201710328936A CN107164736B CN 107164736 B CN107164736 B CN 107164736B CN 201710328936 A CN201710328936 A CN 201710328936A CN 107164736 B CN107164736 B CN 107164736B
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substrate
aperture
electric field
auxiliary cathode
wall
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CN107164736A (zh
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方健灵
龚蔚
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Hefei Kaitai Electromechanical Technology Co Ltd
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3435—Applying energy to the substrate during sputtering
    • C23C14/345—Applying energy to the substrate during sputtering using substrate bias
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/46—Sputtering by ion beam produced by an external ion source

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Plasma Technology (AREA)

Abstract

本发明公开了一种电场导向下的小孔内壁真空离子镀方法，在基片的背面设置接电的辅助阴极，利用辅助阴极引导等离子体中扩散出来的阳离子穿过基片中小孔后趋向辅助阴极，从而在孔壁沉积形成镀膜。本发明是利用电场对离子的导向作用，在小孔内壁沉积金属或非金属的真空离子镀工艺方法，可以解决小孔、深孔内壁不能离子镀膜的难题。

Description

电场导向下的小孔内壁真空离子镀方法
技术领域
本发明涉及真空离子镀方法领域，具体是一种电场导向下的小孔内壁真空离子镀方法。
背景技术
靶材溅射出来的原子或分子被电子碰撞电离后以离子形式沉积在固体表面，称为离子镀。这种技术是D.麦托克斯于1963年提出的。现有技术中离子镀是在真空中进行的，如图1所示，离子镀系统一般将基片5作为阴极，真空室1外壳作阳极，充入惰性气体(如氩)以产生辉光放电。靶材2溅射出来的原子或分子通过电离形成等离子体3，其中阳离子扩散至基材正面附近形成阳离子扩散区6，然后阳离子4被基片台5负电压加速撞击到基片5表面，未电离的中性原子也沉积在基片5或真空室壁表面。电场对离子的加速作用，使基片镀膜层附着力大大提高。
离子镀将基片作为阴极，因此要求基片为导体或镀膜后能成为导体。这样才能实现电场对离子的加速作用，从而实现对基片表面的离子镀。
导电的基片表面会诱导离子根据电场分布进行沉积，这样基片上的小孔、深孔因电场分布不均匀而难以实现离子镀膜，只能依靠溅射出来的中性原子或原子团随机沉积在孔壁上，这样对小孔、深孔的孔壁镀膜能力微弱，特别是对较为粗糙的孔壁及孔深与孔直径比大于4的小孔，镀膜更加困难。
发明内容 本发明的目的是提供一种电场导向下的小孔内壁真空离子镀方法，以解决现有技术中小孔、深孔内壁不能离子镀膜的问题。
为了达到上述目的，本发明所采用的技术方案为：
电场导向下的小孔内壁真空离子镀方法，其特征在于：采用真空离子镀设备进行真空离子镀时，基片不通电或基片接地，基片的正面进行镀膜，基片的背面设置接电的辅助阴极，利用辅助阴极引导等离子体扩散出来的阳离子穿过基片中小孔后趋向辅助阴极，部分阳离子在穿过小孔时与孔壁碰撞沉积形成镀膜。
所述的电场导向下的小孔内壁真空离子镀方法，其特征在于：所述的真空离子镀设备为可以产生离子源的真空设备，优选磁控溅射镀膜设备，或者多弧离子镀膜设备。
所述的电场导向下的小孔内壁真空离子镀方法，其特征在于：所述的辅助阴极形状和基片相似，辅助阴极周边小于基片，以基片作为等离子体扩散出来的阳离子和辅助阴极之间的屏障，使阳离子只有通过基片中的小孔才能到达辅助阴极。
本发明原理为：阳离子在趋向辅助阴极时，不完全是直线运动，在运动过程中会与气体分子和其他阳离子等发生碰撞和作用，而不断改变方向，遇到孔壁时便沉积成膜。
本发明是利用电场对离子的导向作用，在小孔内壁沉积金属或非金属的真空离子镀工艺方法。是真空离子镀技术的功能延伸，可以解决小孔、深孔内壁不能离子镀膜的难题。
本发明优点为：
1.利用电场导向作用，让离子流向小孔并与孔壁碰撞形成镀膜。
2.可以在金属小孔镀膜，也可以在非金属小孔镀膜。
3.可以实现孔深与孔直径比不大于16的小孔镀膜。
4.利用该方法可以实现复杂多孔的电路板钻孔金属化镀膜。
附图说明
图1为现有技术离子镀膜原理示意图。
图2为本发明电场导向下的小孔内壁真空离子镀原理示意图。
具体实施方式
电场导向下的小孔内壁真空离子镀方法，采用真空离子镀设备进行真空离子镀时，以真空室1外壳作阳极，基片5不通电或基片5接地，基片5的正面进行镀膜，基片5的背面设置接电的辅助阴极9，靶材2溅射出来的原子或分子通过电离形成等离子体3，利用辅助阴极9引导等离子体3中扩散出来的阳离子4穿过基片5中小孔7后趋向辅助阴极9，部分阳离子在穿过小孔7时与孔壁碰撞沉积形成镀膜。
真空离子镀设备为可以产生离子源的真空设备，优选磁控溅射镀膜设备，或者多弧离子镀膜设备。
辅助阴极9形状和基片5相似，辅助阴极9周边小于基片5，以基片作为扩散出来的阳离子和辅助阴极之间的屏障，或者在基片5周边加设屏蔽板8作为整体屏蔽结构，使阳离子4只有通过基片5中的小孔7才能到达辅助阴极9。
具体实施例：
本发明包括以下一个或多个步骤：
1、利用光学检测、定位、数控清理，清除小孔内壁钻污；
2、利用刷丝清理，清除小孔边缘毛刺；
3、利用超声波清洗，清除小孔内外表面粉尘；
4、利用真空射频等离子清理，清除小孔内外氧化物和污染物；
5、利用真空离子镀技术，先将负压加在基片上，正常镀膜形成附着力良好的底镀层；
6、利用真空离子镀技术，将基片接地，将负压加在隐蔽的辅助阴极上，使小孔镀膜。

Claims (4)

1.电场导向下的小孔内壁真空离子镀方法，其特征在于：采用真空离子镀设备进行真空离子镀时，基片不通电或基片接地，基片的正面进行镀膜，基片的背面设置接电的辅助阴极，利用辅助阴极引导等离子体中的阳离子穿过基片中小孔后趋向辅助阴极，部分阳离子在穿过小孔时与孔壁碰撞沉积形成镀膜。
2.根据权利要求1所述的电场导向下的小孔内壁真空离子镀方法，其特征在于：所述的真空离子镀设备为产生离子源的真空设备。
3.根据权利要求1所述的电场导向下的小孔内壁真空离子镀方法，其特征在于：所述产生离子源的真空设备为磁控溅射镀膜设备或者多弧离子镀膜设备。
4.根据权利要求1所述的电场导向下的小孔内壁真空离子镀方法，其特征在于：所述的辅助阴极形状和基片相似，辅助阴极周边小于基片，以基片作为阳离子和辅助阴极之间的屏障，使阳离子只有通过基片中的小孔才能到达辅助阴极。
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