CN107154385A - Stack package structure and its manufacture method - Google Patents

Stack package structure and its manufacture method Download PDF

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Publication number
CN107154385A
CN107154385A CN201610128525.2A CN201610128525A CN107154385A CN 107154385 A CN107154385 A CN 107154385A CN 201610128525 A CN201610128525 A CN 201610128525A CN 107154385 A CN107154385 A CN 107154385A
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CN
China
Prior art keywords
component
glue injection
package structure
stack package
packaging body
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201610128525.2A
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Chinese (zh)
Inventor
杨俊�
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
- Core Of Electronic Science And Technology (zhongshan) Co Ltd
Original Assignee
- Core Of Electronic Science And Technology (zhongshan) Co Ltd
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Filing date
Publication date
Application filed by - Core Of Electronic Science And Technology (zhongshan) Co Ltd filed Critical - Core Of Electronic Science And Technology (zhongshan) Co Ltd
Priority to CN201610128525.2A priority Critical patent/CN107154385A/en
Publication of CN107154385A publication Critical patent/CN107154385A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3135—Double encapsulation or coating and encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
    • H01L23/3128—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation the substrate having spherical bumps for external connection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49827—Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/16227—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85007—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector involving a permanent auxiliary member being left in the finished device, e.g. aids for holding or protecting the wire connector during or after the bonding process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/1517—Multilayer substrate
    • H01L2924/15192—Resurf arrangement of the internal vias
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19105—Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Printing Elements For Providing Electric Connections Between Printed Circuits (AREA)

Abstract

The invention discloses a kind of stack package structure and its manufacture method.The stack package structure includes the first packaging body and the second packaging body.First packaging body includes substrate, the first component being installed on substrate, the first glue injection body for coating the first component and the first encapsulation circuit.Second packaging body includes the second component, coats the second glue injection body of the second component.Second packaging body is attached on the first packaging body by the engagement of the second glue injection body and the first glue injection body.First encapsulation circuit and the second component are electrically connected by the conductive fill hole on the first glue injection body and/or the second glue injection body.Stack package structure disclosed by the invention and its manufacture method, it is intended to reduce the thickness of stack package structure, simplify manufacture craft, reduction processing cost.

Description

Stack package structure and its manufacture method
Technical field
The present invention relates to semiconductor device packaging technique field, more particularly, to a kind of stack package structure and its manufacturer Method.
Background technology
The conventional package form of electronic component in electronic equipment, is usually that the element of multiple individual packages is welded into one On printed circuit board (PCB), connected between electronic component by wire, to realize complete function.The electronics of multiple individual packages Element is arranged on a printed circuit board (PCB) (Printed Circuit Board, PCB), need to take larger area, and larger face Long-pending PCB can increase the size of electronic equipment, improve manufacturing cost.To make to accommodate more electronic components on PCB, making electronic equipment But possess more functions with less PCB, occur in that stacked package technology.
Existing stack package structure includes at least two packaging parts, exemplified by two, is designated as the first packaging part and second Packaging part, the first packaging part and the second packaging part are made Hou ﹐ and stacked again respectively.However, existing stack package structure and Its manufacture method mainly has two shortcomings：1st, packaging part directly connect heap fold ﹐ cause the thicker ﹐ of stack package structure not adapt to electronics The lightening requirement of product；2nd, the first packaging part and the second packaging part make Hou ﹐ and do Dui Die ﹐ technique Fu Za ﹐ manufactures again respectively Cost is high.
The content of the invention
In view of the above-mentioned problems in the prior art, the invention discloses a kind of stack package structure and its manufacturer Method, it is intended to reduce the thickness of stack package structure, simplify manufacture craft, reduction processing cost.
Technical scheme is as follows：
A kind of stack package structure, including：
First packaging body, its first component, cladding first component for including substrate, being installed on the substrate The first glue injection body, electrically connected in first glue injection body and with first component first encapsulation circuit；
Second packaging body, it includes the second component, the second glue injection body of cladding second component；
Second packaging body is attached to first encapsulation by the engagement of the second glue injection body and first glue injection body On body, the first encapsulation circuit and the second component are filled out by the conduction on the first glue injection body and/or the second glue injection body Fill hole electrical connection.
Preferably, the substrate is provided with the first weld pad, first component is electrically connected with first weld pad； The position that first glue injection body is engaged with the second glue injection body is provided with the second weld pad, second component and second weld pad It is electrically connected with；The conductive fill hole is electrically connected between first weld pad and the second weld pad.
Preferably, the substrate is provided with the first tin ball for being used for being electrically connected with outer member, second yuan of device Part is electrically connected with second weld pad by the second tin ball.
Preferably, the conductive fill hole includes through hole body and located at the intrinsic conductive materials of the through hole.
Further, the conductive materials invest the through hole sheet to be filled in the intrinsic electroconductive paste of the through hole or plating Conducting film on internal wall.
Preferably, the stack package structure of the present invention also includes being attached at least one layer of the on second packaging body Three packaging bodies；3rd packaging body is identical with second package body structure, and by with the second packaging body identical Adhering mode second packaging body adjacent with the 3rd packaging body or the 3rd packaging body are engaged and electrically connected.
Preferably, first component, the second component are one kind in bare chip, passive device, encapsulation chip Or it is a variety of.
The invention also discloses a kind of manufacture method of stack package structure, including step：
S1, one substrate of offer, the first component is installed in substrate, and injecting glue formation coats the first note of first component Colloid；
S2, in the precalculated position of first glue injection body open up conductive fill hole；
S3, etching, plating formation connection first component and the conductive fill hole on first glue injection body First encapsulation circuit；
S4, on first glue injection body the second component is installed, the second component is electrically connected with the conductive fill hole Connect, and injecting glue formation coats the second glue injection body of second component.
Preferably, the step of the first weld pad is set on the substrate is additionally included in the step S1, described first yuan Device is by first pad installation on substrate；It is additionally included on first glue injection body and is formed and institute in the step S4 The step of stating the second weld pad of conductive fill hole connection, second component is fixed by second pad installation.
Preferably, also including step
S5, by planting ball technique the first tin ball for being electrically connected with outer member is formed on the substrate.
In stack package structure disclosed by the invention and its manufacture method, stack package structure need to only be set in the first packaging body Put substrate, be stacked on the second packaging body on the first packaging body, or more the 3rd packaging body can be directly bonded to phase therewith On adjacent packaging body, the substrate and welding assembly of independent encapsulation can be omitted, so that reduce the thickness of stack package structure, it is also simple Change manufacturing process, reduce processing cost.
Brief description of the drawings
Fig. 1 is structural representation of the stack package structure of the present invention in a preferred embodiment；
Fig. 2 is structural representation of the stack package structure of the present invention in another preferred embodiment；
Fig. 3 is structural representation of the stack package structure of the present invention in another preferred embodiment；
Fig. 4 is schematic flow sheet of the stacked package manufacture method of the present invention in a preferred embodiment；
Fig. 5 is the corresponding structural representations of step S1 in Fig. 4；
Fig. 6 is the corresponding structural representations of step S2 in Fig. 4；
Fig. 7 is the corresponding structural representations of step S3 in Fig. 4；
Fig. 8 is the corresponding structural representations of step S4 in Fig. 4；
Fig. 9 is the corresponding structural representations of step S5 in Fig. 4.
Main element symbol description
First packaging body 1
Second packaging body 2
3rd packaging body 3
First tin ball 1a
Substrate 1b
First chip 1c
First glue injection body 1d
First encapsulation circuit 1e
Conductive fill hole 1f
First weld pad 1g
Second tin ball 2a
Second glue injection body 2b
Second chip 2c
Second weld pad 2d
Passive device 3a
Second encapsulation circuit 3b
3rd chip 3c
3rd glue injection body 3d
Through hole h
Following embodiment will further illustrate the present invention with reference to above-mentioned accompanying drawing.
Embodiment
Embodiment one
As shown in fig.1, being structural representation of the stack package structure of the present invention in a preferred embodiment.
The second encapsulation that the stack package structure of the present embodiment includes the first packaging body 1 and is stacked on the first packaging body 1 Body 2, wherein：
First packaging body 1 includes substrate 1b, and substrate 1b has the two sides being oppositely arranged.Is provided with substrate 1b one side One component is simultaneously provided with the first weld pad 1g, and first component is electrically connected by the first encapsulation circuit 1e with the first weld pad 1g. In specific implementation, first component can be the first chip 1c.Substrate 1b another side be provided with the first tin ball 1a, for Outer member is electrically connected with.First packaging body 1 also includes the first component of cladding, the first weld pad 1g and first and encapsulates circuit 1e's First glue injection body 1d.
Second packaging body 2 includes the second component, coats the second glue injection body 2b of second component.In the present embodiment In, the second component can be the second chip 2c.
Second packaging body 2 is attached to first packaging body 1 by the second glue injection body 2b and the first glue injection body 1d engagement On, the first encapsulation circuit 1e and the second component are electrically connected by the conductive fill hole 1f on the first glue injection body 1d.
Specifically, the position engaged on the second glue injection body 2b with the first glue injection body 1d is provided with the second weld pad 2d, second yuan Device is electrically connected with by the second tin ball 2a and the second weld pad 2d, the conductive fill hole 1f be electrically connected at the first weld pad 1g with Between second weld pad 2d, so that the first packaging body 1 and the second packaging body 2 are electrically connected.It is understood that above-mentioned conductive fill Hole 1f effect is the first packaging body 1 of electrical connection and the second packaging body 2, and therefore, conductive fill hole 1f one end can be with first Any conductor (the such as first encapsulation circuit 1e, the first weld pad 1g, the first component 1c) connection conducting of packaging body 1, it is similarly, conductive The filling hole 1f other end can be connected and lead with any conductor (such as the second weld pad 2d, the second component 2c) of the second packaging body 2 It is logical, however it is not limited to be connected between the first weld pad 1g and the second weld pad 2d.
Conductive fill hole 1f includes through hole and the conductive materials in through hole, and conductive materials can be to be filled in run through Electroconductive paste or plating in hole invest the conducting film on through hole inwall.
In the present embodiment, stack package structure need to only set substrate on the first packaging body 1, and the second packaging body 2 is available The the second glue injection body 2b of itself and the first packaging body 1 the first glue injection body 1d of itself are engaged, so as to be directly stacked upon the first envelope Fill on body 1, the first glue injection body 1d, the second glue injection body 2b are the indispensable encapsulating structure of its correspondence packaging body, can omit independent envelope The substrate and welding assembly of dress, so that the thickness of stack package structure is reduced, meanwhile, making the first packaging body 1, second Stacking can be synchronously completed while packaging body 2, process is reduced, so as to simplify manufacturing process, reduce processing cost.
Embodiment two
As shown in fig.2, being structural representation of the stack package structure of the present invention in another preferred embodiment.
The stack package structure of the present embodiment includes the first packaging body 1 and the 3rd encapsulation being stacked on the first packaging body 1 Body 3, wherein
The structure of first packaging body 1 is identical with embodiment one, will not be described here.
3rd packaging body 3 include passive device, the 3rd chip 3c, electrically connect the passive device and the 3rd chip 3c second Encapsulate circuit 3b, coat the passive device, the encapsulation circuits of the 3rd chip 3c and second 3b the 3rd glue injection body 3d.
3rd packaging body 3 is attached to first packaging body 1 by the 3rd glue injection body 3d and the first glue injection body 1d engagement On, the first encapsulation circuit 1e and the second encapsulation circuit 3b are electrically connected by the conductive fill hole 1f on the first glue injection body 1d. Specifically, the position engaged on the 3rd glue injection body 3d with the first glue injection body 1d is provided with the 3rd weld pad, above-mentioned passive device and the Three weld pads are welded, and the 3rd chip 3c is adhered on the first glue injection body 1d, and passive device is electrically connected with the 3rd chip 3c by connecting line Connect, access second and encapsulate in circuit 3b, conductive fill hole 1f is electrically connected between the first weld pad and the 3rd weld pad, so that First packaging body 1 and the 3rd packaging body 3 are electrically connected.Explanation is needed also exist for, conductive fill hole 1f one end can be with first Any conductor connection conducting of packaging body 1, any conductor (such as the 3rd weld pad, passive device that the other end can be with the 3rd packaging body 3 Part, the 3rd chip 3c) connection conducting, however it is not limited to it is connected between the first weld pad 1g and the 3rd weld pad.
The stack package structure that the present embodiment is provided is applicable to the stacking between the packaging body of different structure, only needs basis Real needs do accommodation to electric connection structure, make each packaging body connection conducting.In addition, the scheme of the present embodiment is same Sample has the advantages that to reduce the thickness of stack package structure, simplifies manufacturing process, reduction processing cost, manages be the same as Example one, This is no longer analyzed.
Embodiment three
As shown in fig.3, being structural representation of the stack package structure of the present invention in another preferred embodiment.
The stack package structure of the present embodiment includes the first packaging body 1, the 3rd packaging body being stacked on the first packaging body 1 3 and the second packaging body 2 for being stacked on the 3rd packaging body 3.Wherein the first packaging body 1, the second packaging body 2, the 3rd packaging body 3 Structure is identical with corresponding structure in embodiment one and embodiment two.3rd packaging body 3 by with the identical mode of embodiment two It is stacked on the first packaging body 1.Second packaging body 2 is stacked on the 3rd by the second glue injection body 2b and the 3rd glue injection body 3d engagement On packaging body 3.
It is understood that in specific implementation, the stack manner that embodiment three is can refer to according to the actual requirements is carried out more Multiple-level stack is encapsulated.
Summary embodiment can be seen that stack package structure disclosed by the invention and need to only be set in the first packaging body 1 Substrate, is stacked on the second packaging body 2 on the first packaging body, or more the 3rd packaging body 3 can be directly bonded to phase therewith On adjacent packaging body, the substrate and welding assembly of independent encapsulation can be omitted, so that reduce the thickness of stack package structure, it is also simple Change manufacturing process, reduce processing cost.
The invention also discloses a kind of manufacture method of stack package structure, in conjunction with the stacked package knot in embodiment two Structure is described in detail.As shown in fig.4, the manufacture method of the stack package structure includes step：
S1, please refer to Fig. 4 and Fig. 5 there is provided a substrate 1b, the first component (such as the first core is installed on substrate 1b Piece 1c), and injecting glue formation coats the first glue injection body 1d of first component；In specific implementation, the substrate is additionally included in The step of the first weld pad 1g of upper setting, the first component is arranged on substrate 1b by the first weld pad 1g；
S2, please refer to Fig. 4 and Fig. 6, open up through hole h in the precalculated position of the first glue injection body 1d；
S3, Fig. 4 and Fig. 7 are referred to, conductive materials formation conductive fill hole 1f is filled in through hole h, conductive materials can The conducting film on through hole h inwalls is invested for the electroconductive paste being filled in through hole h or plating, and on the first glue injection body 1d Etching, plating form the first encapsulation circuit 1e for connecting first component and the conductive fill hole；
S4, please refer to Fig. 4 and Fig. 8, the second component is installed on the first glue injection body 1d, specifically, can The second weld pad 2d being connected with the conductive fill hole is formed on the first glue injection body 1d, the second component is passed through second Weld pad 2d, which is installed, to be fixed；Second component is electrically connected with the conductive fill hole 1f, and injecting glue formation coats second yuan of device Second glue injection body 2b of part；
S5, please refer to Fig. 4 and Fig. 9, form the first tin ball 1a on the substrate by planting ball technique, for it is outer Portion's element is electrically connected with.
In the manufacture method of stack package structure disclosed in the present embodiment, using the indispensable encapsulating structure of packaging body, such as the One glue injection body 1d, the second glue injection body 2b engagement complete to stack, and the first glue injection body 1d, the second glue injection body 2b are that its correspondence is encapsulated The indispensable encapsulating structure of body, can omit the substrate and welding assembly of independent encapsulation, so as to reduce the thickness of stack package structure Degree, and stacking can be synchronously completed while packaging body is made, process is reduced, so as to simplify manufacturing process, reduce Processing cost.
The above embodiments are merely illustrative of the technical solutions of the present invention and it is unrestricted, although with reference to preferred embodiment to this hair It is bright to be described in detail, it will be understood by those within the art that, technical scheme can be modified Or equivalent substitution, without departing from the spirit and scope of technical solution of the present invention.

Claims (10)

1. a kind of stack package structure, it is characterised in that including
First packaging body, it includes substrate, the of the first component for being installed on the substrate, cladding first component One glue injection body, first electrically connected in first glue injection body and with first component encapsulation circuit；
Second packaging body, it includes the second component, the second glue injection body of cladding second component；
Second packaging body is attached to first encapsulation by the engagement of second glue injection body and first glue injection body On body, the first encapsulation circuit and second component pass through located at first glue injection body and/or second injecting glue Conductive fill hole electrical connection on body.
2. stack package structure as claimed in claim 1, it is characterised in that：The substrate is provided with the first weld pad, described the One component is electrically connected with first weld pad；The position that first glue injection body is engaged with the second glue injection body is provided with the second weldering Pad, second component is electrically connected with second weld pad；The conductive fill hole is electrically connected at first weld pad Between the second weld pad.
3. stack package structure as claimed in claim 1, it is characterised in that：The substrate, which is provided with, to be used for and outer member electricity Property connection the first tin ball, second component and second weld pad are electrically connected with by the second tin ball.
4. stack package structure as claimed in claim 1 or 2, it is characterised in that：The conductive fill hole include through hole and It is filled in the conductive materials in the through hole.
5. stack package structure as claimed in claim 4, it is characterised in that：The conductive materials are to be filled in the through hole sheet Internal electroconductive paste or plating invests the conducting film in the through hole inner body wall.
6. stack package structure as claimed in claim 1, it is characterised in that：Also include being attached on second packaging body At least one layer of 3rd packaging body；3rd packaging body is identical with second package body structure, and by with second envelope Dress body identical adhering mode second packaging body adjacent with the 3rd packaging body or the 3rd packaging body are engaged and electrically connected.
7. such as stack package structure according to any one of claims 1 to 3, it is characterised in that：First component, second Component is the one or more in bare chip, passive device, encapsulation chip.
8. a kind of manufacture method of stack package structure, it is characterised in that including step：
S1, one substrate of offer, the first component is installed in substrate, and injecting glue formation coats the first injecting glue of first component Body；
S2, in the precalculated position of first glue injection body open up conductive fill hole；
S3, etch on first glue injection body, electroplate and form connect first component and the conductive fill hole the One encapsulation circuit；
S4, on first glue injection body the second component is installed, the second component is electrically connected with the conductive fill hole, and Injecting glue formation coats the second glue injection body of second component.
9. the manufacture method of stack package structure as claimed in claim 8, it is characterised in that：It is additionally included in the step S1 The step of setting the first weld pad on the substrate, first component is by first pad installation on substrate；It is described The step of the second weld pad that formation is connected with the conductive fill hole on first glue injection body is additionally included in step S4, it is described Second component is fixed by second pad installation.
10. the manufacture method of stack package structure as claimed in claim 8, it is characterised in that：Also include step
S5, by planting ball technique the first tin ball for being electrically connected with outer member is formed on the substrate.
CN201610128525.2A 2016-03-04 2016-03-04 Stack package structure and its manufacture method Pending CN107154385A (en)

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