CN108447829A - Package structure and method for fabricating the same - Google Patents
Package structure and method for fabricating the same Download PDFInfo
- Publication number
- CN108447829A CN108447829A CN201710120094.XA CN201710120094A CN108447829A CN 108447829 A CN108447829 A CN 108447829A CN 201710120094 A CN201710120094 A CN 201710120094A CN 108447829 A CN108447829 A CN 108447829A
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- China
- Prior art keywords
- encapsulating structure
- structure according
- load
- bearing part
- preparation
- Prior art date
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- Granted
Links
- 238000000034 method Methods 0.000 title description 9
- 239000002184 metal Substances 0.000 claims abstract description 25
- 229910052751 metal Inorganic materials 0.000 claims abstract description 25
- 238000002360 preparation method Methods 0.000 claims description 35
- 239000011469 building brick Substances 0.000 claims description 10
- 238000005253 cladding Methods 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims 3
- 238000000576 coating method Methods 0.000 claims 3
- 230000000694 effects Effects 0.000 abstract description 10
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 238000013461 design Methods 0.000 abstract description 3
- 230000017525 heat dissipation Effects 0.000 abstract description 2
- 238000004806 packaging method and process Methods 0.000 abstract 2
- 239000010410 layer Substances 0.000 description 20
- 239000004065 semiconductor Substances 0.000 description 15
- 239000000463 material Substances 0.000 description 13
- 238000000465 moulding Methods 0.000 description 10
- 238000010586 diagram Methods 0.000 description 8
- 239000000084 colloidal system Substances 0.000 description 5
- 238000012856 packing Methods 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 239000004642 Polyimide Substances 0.000 description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 4
- 229920001721 polyimide Polymers 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 238000005476 soldering Methods 0.000 description 4
- 239000004593 Epoxy Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000012792 core layer Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000005191 phase separation Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 230000000191 radiation effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/03—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73253—Bump and layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19105—Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate
Abstract
A packaging structure and a manufacturing method thereof are provided, wherein a covering part is connected to a bearing part to cover at least one electronic element on the bearing part, and the bearing part is combined to a metal frame by a plurality of conductive elements, so that the design of the covering part improves the heat dissipation efficiency of the packaging structure and provides an EMI shielding effect for the electronic element.
Description
Technical field
The present invention is about a kind of encapsulating structure, especially with regard to the encapsulating structure and its preparation method of a kind of stacking.
Background technology
With flourishing for portable electronic product in recent years, the exploitation of all kinds of Related products is also directed to high density, height
Performance and light, thin, short, small trend, for this purpose, industry develops the various encapsulation aspect for integrating multi-chip, to meet
Electronic product is light and short with highdensity requirement.
Fig. 1 is the schematic cross-sectional view of existing semiconductor package 1.As shown in Figure 1, the system of the semiconductor package 1
Method in the upper and lower both sides of a substrate 10 setting semiconductor element 11 and passive device 11 ', then with the cladding of packing colloid 14 by being somebody's turn to do
A little semiconductor elements 11 and passive device 11 ', and the contact (I/O) 100 of the substrate 10 is made to expose to the packing colloid
(moldingcompound) 14, multiple soldered balls 13 are formed later on those contacts 100, in follow-up process, the semiconductor
Encapsulating structure 1 connects the electronic device set such as circuit board or another wiring board through the soldered ball 13 (figure omits).
However, in existing semiconductor package 1, due to the packing colloid 14 molding (molding) range reduction with
Those exposed contacts 100, thus the molding die of specific dimensions need to be used regarding the size of the semiconductor package 1, thus it is single
One molding die can not be suitable for the size of various semiconductor packages 1, thus increase production cost.
Also, those semiconductor elements 11 are coated on passive device 11 ' in the packing colloid 14, cause those semiconductor elements
Part 11 and the heat dissipation effect of passive device 11 ' are bad.
Therefore, how to overcome the variety of problems of the above-mentioned prior art, have become the project for wanting to solve at present in fact.
Invention content
In view of the missing of the above-mentioned prior art, a kind of encapsulating structure of present invention offer and its preparation method improve the encapsulating structure
Radiating efficiency, and to the electronic component provide EMI shielding effect.
The encapsulating structure of the present invention, including：Load-bearing part；Electronic component connects and is placed on the load-bearing part；Multiple conductive elements
Part connects and is placed on the load-bearing part；Covering members connect and are placed on the load-bearing part and cover the electronic component；And metal frame,
Include multiple electric contact mats, so that multiple conducting element is bound on multiple electric contact mat.
The present invention also provides a kind of preparation methods of encapsulating structure, including：One is provided comprising load-bearing part and connects and is placed in the carrying
The electronic building brick of electronic component and multiple conducting elements on part；It connects and sets covering members in first to cover the electronics on the load-bearing part
Part；And the electronic building brick is bound to one through the conducting element and includes in the metal frame of multiple electric contact mats, for
Multiple conducting element, which connects, to be placed on multiple electric contact mat.
In encapsulating structure above-mentioned and its preparation method, which is lead frame.
In encapsulating structure above-mentioned and its preparation method, which also includes the plate body of the corresponding positions of electronic parts, and enables
Multiple electric contact mat is located at around the plate body.The plate body is bound on the covering members.
In encapsulating structure above-mentioned and its preparation method, which is bound to by intermediary layer on the electronic component.
Further include support element in encapsulating structure above-mentioned and its preparation method, connect and be placed on the load-bearing part, to enable the covering members
It is resisted against on the support element.For example, the support element is set between two electronic components, and the support element is grounded.
Further include clad in encapsulating structure above-mentioned and its preparation method, be formed between the load-bearing part and the metal frame,
To coat the covering members and those conducting elements, and the electric contact mat is enabled to expose outside the clad.For example, the covering members are exposed
The clad or the not exposed clad；Alternatively, the electric contact mat exposes to the side of the clad.
In encapsulating structure above-mentioned and its preparation method, which has the first opposite side and the second side, and electronics member
Part includes the first electronic component and the second electronic component for connecing be placed in first side and the second side respectively, so that covering members connect
It is placed in the second side and covers second electronic component.For example, the first side of the load-bearing part is formed with clad；Alternatively, should
Metal frame is set in the first side and/or the second side of the load-bearing part.
In addition, in encapsulating structure above-mentioned and its preparation method, which is electrically connected the load-bearing part.Covering members covering is more
A electronic component.The covering members are set between two electronic components.The covering members are grounded.
From the foregoing, it will be observed that in the encapsulating structure and its preparation method of the present invention, mainly by the way that electronic building brick is penetrated multiple conductive elements
Part be incorporated into include make the electric contact mat of the metal frame as electrical contact in the metal frame of multiple electric contact mats, therefore
Compared to the prior art, the present invention can utilize the clad of general molding die formation coated electric components part, without cooperation
The size selection difference mold of encapsulating structure, thus can effectively reduce production cost.
Furthermore by the design that the covering members of overlay electronic element are arranged on the load bearing member, the encapsulating structure can be improved
Radiating efficiency, and provide the EMI effects of shielding to the electronic component.
Description of the drawings
Fig. 1 is the diagrammatic cross-section of existing semiconductor package；
Fig. 2A to Fig. 2 C is the diagrammatic cross-section of the preparation method of the encapsulating structure of the present invention；
Fig. 3 A are the diagrammatic cross-section of the follow-up process of corresponding diagram 2C；
Fig. 3 B are the diagrammatic cross-section of another embodiment of corresponding diagram 3A；
Fig. 3 C are the diagrammatic cross-section of the another embodiment of corresponding diagram 3A；
Fig. 4 is the diagrammatic cross-section of another embodiment of corresponding diagram 2C；
Fig. 5 A are that the lower of corresponding diagram 2C regards schematic diagram；And
Fig. 5 B are the schematic diagram of another embodiment of corresponding diagram 5A.
Symbol description:
1 semiconductor package
10 substrates
100 contacts
11 semiconductor elements
11 ' passive devices
13 soldered balls
14 packing colloids
2,3,3 ', 3 ", 4 encapsulating structures
2a electronic building bricks
20 load-bearing parts
The first sides 20a
20b the second sides
200 line layers
21,21 ', 41 first electronic components
210,220 conductive bumps
22,42 second electronic components
221 primers
23,23 ', 23 " conducting elements
24 first clads
25,25 ", 45 metal frames
250 electric contact mats
251 plate bodys
26 second clads
26a first surfaces
26b second surfaces
The sides 26c
27,47 support elements
28 covering members
280,29 intermediary layers.
Specific implementation mode
Illustrate that embodiments of the present invention, those skilled in the art can be by this explanations below by way of particular specific embodiment
The revealed content of book understands other advantages and effect of the present invention easily.
It should be clear that structure, ratio, size etc. depicted in this specification institute accompanying drawings, only coordinating specification to be taken off
The content shown is not limited to the enforceable qualifications of the present invention for the understanding and reading of those skilled in the art, therefore
Do not have technical essential meaning, the modification of any structure, the change of proportionate relationship or the adjustment of size are not influencing the present invention
Under the effect of can be generated and the purpose that can reach, it should all still fall and obtain the model that can cover in disclosed technology contents
In enclosing.Meanwhile cited such as "upper" in this specification, " first ", " second " and " one " term, be merely convenient to chat
That states is illustrated, rather than to limit the scope of the invention, relativeness is altered or modified, and skill is being changed without essence
It is held in art, when being also considered as the enforceable scope of the present invention.
Fig. 2A to Fig. 2 C is the diagrammatic cross-section of the preparation method of the encapsulating structure 2 of the present invention.
As shown in Figure 2 A, an electronic building brick 2a is provided, it includes a load-bearing part 20 and on the load-bearing part 20
One electronic component 21,21 ', the second electronic component 22, conducting element 23 and support element 27.
The load-bearing part 20 has the first opposite side 20a and the second side 20b.In this present embodiment, the load-bearing part 20
For example, there is core layer and the package substrate (substrate) of line construction or the circuit knot of seedless central layer (coreless)
Structure is such as fanned out to (fan out) type and reroutes road floor (redistribution layer, abbreviation with multiple line layers 200
RDL).It should be appreciated that ground, which also can be other load bearing units for carrying such as chip electronic component, such as lead
Coil holder (leadframe), however it is not limited to above-mentioned.
First electronic component 21,21 ' is set on the first side 20a of the load-bearing part 20.In this present embodiment, this
One electronic component 21,21 ' is active member (such as label 21), passive device (such as label 21 ') or the two combination, wherein
The active member is such as semiconductor chip, and the passive device is such as resistance, capacitance and inductance.For example, first electronics
Element 21 is set on the line layer 200 and is electrically connected with rewinding method by multiple conductive bumps 210 such as soldering tin material should
Line layer 200；Alternatively, first electronic component 21 can be electrically connected the line layer by multiple bonding wires (figure omits) in a manner of routing
200；Or first electronic component 21 ' can be in direct contact the line layer 200.However, related first electronic component 21,21 '
Be electrically connected the load-bearing part 20 mode be not limited to it is above-mentioned.
After the first electronic component 21,21 ' is set on the load-bearing part 20, it can also be formed and coat first electronic component 21,
21 ' the first clad 24.In this present embodiment, formed first clad 24 material be polyimides (polyimide,
Abbreviation PI), dry film (dry film), epoxy resin (epoxy) or package material (molding compound).In other embodiments
In, electronic building brick 2a can not form first clad 24.
Can be arranged on the load-bearing part 20 after forming first clad 24 second electronic component 22, conducting element 23 and
Support element 27.
Second electronic component 22 is set on the second side 20b of the load-bearing part 20.In this present embodiment, second electricity
Subcomponent 22 is active member, passive device or the two combination etc., wherein the active member is such as semiconductor chip, and
The passive device is such as resistance, capacitance and inductance.For example, second electronic component 22 passes through multiple conductions such as soldering tin material
Convex block 220 is set to rewinding method on the line layer 200；Alternatively, second electronic component 22 can pass through multiple bonding wires (figure omits)
The line layer 200 is electrically connected in a manner of routing.However, being electrically connected the side of the load-bearing part 20 in relation to second electronic component 22
Formula is not limited to above-mentioned.
The conducting element 23 is set on the line layer 200 of the second side 20b of the load-bearing part 20.In this present embodiment,
The conducting element 23 is soldered ball (solder ball), but is not limited to above-mentioned.
The support element 27 is set on the second side 20b of the load-bearing part 20, and positioned at the week of second electronic component 22
It encloses.In this present embodiment, which is metal framework (or other material frames) and is electrically connected the carrying (as being grounded)
Part 20, and the conducting element 23 is located at 27 outside of support element.
As shown in Figure 2 B, primer 221 is formed between second electronic component 22 and the second side 20b of the load-bearing part 20,
To coat those conductive bumps 220.Then, one covering members 28 of setting on the second side 20b of the load-bearing part 20 with cover this
Two electronic components 22.
In this present embodiment, which is metal cover, against the support element 27 in favor of setting up and be electrically connected
(as the being grounded) load-bearing part 20, and by an intermediary layer 280 to be bound on second electronic component 22.For example, the intermediary layer
280 be, for example, film (film), epoxy resin (epoxy) or thermal interface material (thermal interface material, letter
Claim TIM).
As shown in Figure 2 C, electronic building brick 2a is bound to its conducting element 23 in a metal frame 25, and the covering members
28 are also bound in the metal frame 25, to form an encapsulating structure 2.
In this present embodiment, which is, for example, lead frame (leadframe), and it includes a plate bodys 251 and multiple
Around the plate body 251 and the electric contact mat 250 of phase separation, and those electric contact mats 250 is enabled to combine each conductive element
Part 23, and the plate body 251 corresponds to the position of second electronic component 22, to enable the covering members 28 be combined by another intermediary layer 29
To the plate body 251.Specifically, which is separated with those electric contact mats 250, and as shown in Figure 5A, those are electrically
Engagement pad 250 is around the plate body 251.It should be appreciated that ground, can surround the in electrical contact of multi-turn around the plate body 251
Pad 250, two rings as shown in Figure 5 B.
In addition, in follow-up process, (can scheme in forming the soldering tin material just like soldered ball on those electric contact mats 250
Slightly), for connecing the electronic device set such as circuit board or another wiring board.
Therefore, the design that encapsulating structure preparation method of the invention is grounded by the covering members 28, can be to second electronic component
22 provide the effect that electromagnetic interference (Electromagnetic Interference, abbreviation EMI) shields (shielding).
In addition, the encapsulating structure 2 can conduct the heat of second electronic component 22 by the plate body 251, with heat radiation
Effect.
In other embodiments, as shown in Figure 3A, can in follow-up process, be formed selectively one second clad 26 in
Between 20 the second side 20b of the load-bearing part and the metal frame 25, second clad 26 is set to coat the covering members 28 conductive with those
Element 23.
In this present embodiment, the material for forming second clad 26 is polyimides (polyimide, abbreviation PI), ring
Oxygen resin (epoxy) or package material (molding compound), and second clad 26 has opposite first surface 26a
With second surface 26b, second clad 26 is made to combine the second side 20b of the load-bearing part 20, and the gold with its second surface 26b
Belong to frame 25 and be embedded at the first surface 26a of second clad 26, and those electric contact mats 250 is made to expose to second cladding
The first surface 26a of layer 26 is (for example, the lower surface of those electric contact mats 250 flushes the first surface of second clad 26
26a), in soldering tin material of the formation on the exposed surface of those electric contact mats 250 just like soldered ball (figure omits) so that set for connecing
Such as circuit board or the electronic device of another wiring board.
It should be appreciated that ground, the material of second clad 26 can be identical with the material of first clad 24 or differ.
Furthermore if in the processing procedure of Fig. 2A, electronic building brick 2a does not form first clad 24, then in formed this second
When clad 26, which also coats those the first electronic components 21,21 ', as seen in figure 3b, another to be formed
Encapsulating structure 3 '.
Also, as shown in Figure 3 C, the conducting element 23 ', 23 " being set on the load-bearing part 20 also can be copper core balls (Cu
Core ball), passive device or metalwork (such as column, bulk or needle-shaped).Specifically, the conducting element 23 ' in left side is copper
Core balls, and the conducting element 23 " on right side is passive device, such as resistance, capacitance and inductance, with decoupling capacitance in figure
For (decoupling capacitor).
In addition, conducting element 23 can be also formed on the line layer 200 of the first side 20a of the load-bearing part 20, as shown in Figure 3 C,
And it is bound to another metal frame 25 ".
In another embodiment, the support element 27 can be also omitted, and covering members 28 is enabled to be bound to second electronic component 22
On, as shown in Figure 3 C.
Therefore, the preparation method of encapsulating structure of the invention is used as electrical contact by the metal frame 25, and so there is no need to coordinate the envelope
The size of assembling structure 2,3,3 ', 3 " and the molding die for using specific dimensions, that is, can pass through general molding die and formed
Second clad 26, and reduce production cost.
In other embodiments, which can surround (covering) multiple second electronic components
42, as shown in figure 4, support element 47 (or the covering members 28) can separately be arranged between two second electronic components 42, and make the branch
Support member 47 (or the covering members 28) is grounded, with the effect that EMI is shielded between offer respectively second electronic component 42.
In addition, the metal frame 45 can not have plate body 251, make exposed second clad, 26 (not shown) of the covering members 28
Or not exposed second clad 26 (as shown in Figure 4).
Also, the electric contact mat 250 can also expose to the side 26c of second clad 26, as shown in Fig. 4 or Fig. 5, with
As similar square surface leadless packages (Quad Flat No-leads, abbreviation QFN) structure.
The present invention also provides a kind of encapsulating structures 2,3,3 ', 3 ", 4 comprising：One load-bearing part 20, the first electronic component 21,
21 ', second electronic component 22,42, multiple conducting elements 23,23 ', 23 ", at least a metal frame 25,25 ", 45 and one cover
Part 28.
The load-bearing part 20 has the first opposite side 20a and the second side 20b.
First electronic component 21,21 ' connects on the first side 20a for being placed in the load-bearing part 20.Second electronics
Element 22,42 connects on the second side 20b for being placed in the load-bearing part 20.
The conducting element 23,23 ', 23 " meets the first side 20a and/or the second side 20b for being placed in the load-bearing part 20
On.
The metal frame 25,25 ", 45 include multiple electric contact mats 250 being bound on those conducting elements 23.
The covering members 28 connect on the second side 20b for being placed in the load-bearing part 20 and cover second electronic component 22,42.
In an embodiment, which is lead frame.
In an embodiment, which also includes the plate body 251 of corresponding second electronic component, 22 position.For example,
The electric contact mat 250 is separated with the plate body 251.Alternatively, the plate body 251 is bound on the covering members 28, for example, the plate body
251 are bound to by an intermediary layer 29 on the covering members 28.
In an embodiment, which is bound to by an intermediary layer 280 on second electronic component 22.
In an embodiment, it can be deduced by Fig. 4, which covers multiple second electronic components 42.
In an embodiment, which further includes a support element 27,47, connects and is placed in the load-bearing part 20
The second side 20b on, to enable the covering members 28 be resisted against on the support element 27.For example, the support element 47 be located at least two this
Between two electronic components 42.
In an embodiment, which further includes one second clad 26, is formed in the load-bearing part
Between 20 and the metal frame 25,45, to coat the covering members 28 and those conducting elements 23,23 ', 23 ".For example, this is electrically connected with
Touch pad 250 exposes to the first surface 26a (and side 26c) of second clad 26.
In conclusion the encapsulating structure and its preparation method of the present invention, are used as electrical contact by the metal frame, therefore can be used logical
Second clad is formed with molding die, and reduces production cost.
Furthermore the radiating efficiency of electronic component can be improved by the support element (or the covering members), and electronic component is provided
The effect of EMI shieldings.
Above-described embodiment is only to be illustrated the principle of the present invention and its effect, and is not intended to limit the present invention.Appoint
What one of ordinary skill in the art can without violating the spirit and scope of the present invention modify to above-described embodiment, and preceding
Application can be combined with each other again by stating the content of each embodiment.Therefore the scope of the present invention, should be as listed in the claims.
Claims (36)
1. a kind of encapsulating structure, it is characterized in that, which includes：
Load-bearing part；
Electronic component connects and is placed on the load-bearing part；
Multiple conducting elements connect and are placed on the load-bearing part；
Covering members connect and are placed on the load-bearing part and cover the electronic component；And
Metal frame, it includes there is multiple electric contact mats, so that multiple conducting element is bound on multiple electric contact mat.
2. encapsulating structure according to claim 1, it is characterized in that, which is lead frame.
3. encapsulating structure according to claim 1, it is characterized in that, which also includes the corresponding positions of electronic parts
Plate body, and multiple electric contact mat is enabled to be located at around the plate body.
4. encapsulating structure according to claim 3, it is characterized in that, which is bound on the covering members.
5. encapsulating structure according to claim 1, it is characterized in that, which is bound to the electronic component by intermediary layer
On.
6. encapsulating structure according to claim 1, it is characterized in that, which further includes connecing to be placed on the load-bearing part
Support element, and the covering members is enabled to be resisted against on the support element.
7. encapsulating structure according to claim 6, it is characterized in that, which is set between two electronic components.
8. encapsulating structure according to claim 6, it is characterized in that, support element ground connection.
9. encapsulating structure according to claim 1, it is characterized in that, which further includes clad, is formed in this and holds
Between holder and the metal frame, to coat the covering members and multiple conducting element, and the electric contact mat is enabled to expose outside the packet
Coating.
10. encapsulating structure according to claim 9, it is characterized in that, the exposed clad of the covering members or the not exposed packet
Coating.
11. encapsulating structure according to claim 9, it is characterized in that, which exposes to the side of the clad.
12. encapsulating structure according to claim 1, it is characterized in that, which has the first opposite side and the second side,
And the electronic component includes the first electronic component and the second electronic component for connecing be placed in first side and the second side respectively, with
It is connect for covering members and is placed in the second side and covers second electronic component.
13. encapsulating structure according to claim 12, it is characterized in that, the first side of the load-bearing part is formed with clad.
14. encapsulating structure according to claim 12, it is characterized in that, the metal frame be set to the load-bearing part the first side and/
Or in the second side.
15. encapsulating structure according to claim 1, it is characterized in that, which is electrically connected the load-bearing part.
16. encapsulating structure according to claim 1, it is characterized in that, which covers multiple electronic components.
17. encapsulating structure according to claim 1, it is characterized in that, which is set between two electronic components.
18. encapsulating structure according to claim 1, it is characterized in that, covering members ground connection.
19. a kind of preparation method of encapsulating structure, it is characterized in that, which includes：
Offer one includes load-bearing part and connects the electronic building brick of the electronic component and multiple conducting elements that are placed on the load-bearing part；
Connect set covering members on the load-bearing part to cover the electronic component；And
The electronic building brick is bound to one through multiple conducting element includes in the metal frame of multiple electric contact mats, for
Multiple conducting element, which connects, to be placed on multiple electric contact mat.
20. the preparation method of encapsulating structure according to claim 19, it is characterized in that, which is lead frame.
21. the preparation method of encapsulating structure according to claim 19, it is characterized in that, which also includes the corresponding electronics
The plate body of position of components, and multiple electric contact mat is enabled to be located at around the plate body.
22. the preparation method of encapsulating structure according to claim 21, it is characterized in that, which is bound on the covering members.
23. the preparation method of encapsulating structure according to claim 19, it is characterized in that, which is bound to this by intermediary layer
On electronic component.
24. the preparation method of encapsulating structure according to claim 19, it is characterized in that, which further includes being connect on the load-bearing part
Support element is set, to enable the covering members be resisted against on the support element.
25. the preparation method of encapsulating structure according to claim 24, it is characterized in that, the support element be set to two electronic components it
Between.
26. the preparation method of encapsulating structure according to claim 24, it is characterized in that, support element ground connection.
27. the preparation method of encapsulating structure according to claim 19, it is characterized in that, which further includes in the load-bearing part and being somebody's turn to do
The clad of cladding covering members and multiple conducting element is formed between metal frame, and the electric contact mat is enabled to expose outside the packet
Coating.
28. the preparation method of encapsulating structure according to claim 27, it is characterized in that, exposed clad of the covering members or not outer
Reveal the clad.
29. the preparation method of encapsulating structure according to claim 27, it is characterized in that, which exposes to the clad
Side.
30. the preparation method of encapsulating structure according to claim 19, it is characterized in that, the load-bearing part have the first opposite side and
The second side, and the electronic component includes the first electronic component and the second electronics for connecing be placed in first side and the second side respectively
Element is placed in the second side and covers second electronic component so that covering members connect.
31. the preparation method of encapsulating structure according to claim 30, it is characterized in that, the first side of the load-bearing part is formed with cladding
Layer.
32. the preparation method of encapsulating structure according to claim 30, it is characterized in that, which is set to the first of the load-bearing part
On side and/or the second side.
33. the preparation method of encapsulating structure according to claim 19, it is characterized in that, which is electrically connected the load-bearing part.
34. the preparation method of encapsulating structure according to claim 19, it is characterized in that, which covers multiple electronics members
Part.
35. the preparation method of encapsulating structure according to claim 19, it is characterized in that, the covering members be set to two electronic components it
Between.
36. the preparation method of encapsulating structure according to claim 19, it is characterized in that, covering members ground connection.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW106105041A TWI645518B (en) | 2017-02-16 | 2017-02-16 | Package structure and the manufacture thereof |
| TW106105041 | 2017-02-16 |
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| TW (1) | TWI645518B (en) |
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| TWI714269B (en) * | 2019-09-19 | 2020-12-21 | 矽品精密工業股份有限公司 | Electronic package and method for manufacturing the same |
| TWI732509B (en) * | 2020-04-01 | 2021-07-01 | 矽品精密工業股份有限公司 | Electronic package |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104733419A (en) * | 2013-12-20 | 2015-06-24 | 乾坤科技股份有限公司 | Three-dimensional Package Structure And The Method To Fabricate Thereof |
| CN105552059A (en) * | 2014-10-22 | 2016-05-04 | 日月光半导体制造股份有限公司 | Semiconductor package structure and semiconductor process |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| TW201123396A (en) * | 2009-12-24 | 2011-07-01 | Chipsip Technology Co Ltd | Package structure with shielding |
| TWI581380B (en) * | 2015-07-20 | 2017-05-01 | 矽品精密工業股份有限公司 | Package structure and shielding member and method for fabricating the same |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104733419A (en) * | 2013-12-20 | 2015-06-24 | 乾坤科技股份有限公司 | Three-dimensional Package Structure And The Method To Fabricate Thereof |
| CN105552059A (en) * | 2014-10-22 | 2016-05-04 | 日月光半导体制造股份有限公司 | Semiconductor package structure and semiconductor process |
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| TWI645518B (en) | 2018-12-21 |
| TW201832324A (en) | 2018-09-01 |
| CN108447829B (en) | 2020-07-17 |
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