CN107154376A - Electrostatic chuck apparatus - Google Patents
Electrostatic chuck apparatus Download PDFInfo
- Publication number
- CN107154376A CN107154376A CN201610122355.7A CN201610122355A CN107154376A CN 107154376 A CN107154376 A CN 107154376A CN 201610122355 A CN201610122355 A CN 201610122355A CN 107154376 A CN107154376 A CN 107154376A
- Authority
- CN
- China
- Prior art keywords
- insulating barrier
- electrostatic chuck
- chuck apparatus
- electrode layer
- electrostatic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
Abstract
The invention discloses a kind of electrostatic chuck apparatus, belong to processing technology of semiconductor wafer field, the electrostatic chuck apparatus includes the first insulating barrier, the second insulating barrier, electrode layer and metal level, first insulating barrier is arranged on the top of the second insulating barrier, the electrode layer is arranged between first insulating barrier and the second insulating barrier, second insulating barrier is arranged on the metal level, and first insulating barrier is sapphire material.Present invention kind resistance to corrosion is strong, electrostatic adsorption force is uniform and low for equipment requirements.
Description
Technical field
The present invention relates to semiconductor wafer processing device, a kind of electrostatic chuck apparatus is particularly related to.
Background technology
In integrated circuit (IC) process for making, (ETCH), physical vapor are particularly etched
Deposit in (PVD) and chemical vapor deposition (CVD), for fixed and support chip, it is to avoid processing
During chip there is mobile or inconsistent phenomenon, often fix and support crystalline substance using chuck or sucker
Piece.Conventional chuck or sucker has mechanical chuck, vacuum cup and electrostatic chuck (abbreviation ESC:
Electro Static Chuck)。
Mechanical chuck is fixed and supported chip by mechanical arm, and it has the disadvantage mechanical chuck due to pressure
The reasons such as power, collision easily cause wafer breakage；Motion of the mechanical chuck in reaction chamber, easily
Particle is produced, chip is polluted；Mechanical chuck also takes up chip in fixed wafer simultaneously
Edge area reduce chip utilization rate.Vacuum cup is exactly as its name suggests to employ vacuum principle,
Using negative pressure of vacuum come " absorption " chip to reach the purpose of holding chip, it has the disadvantage can not be true
Worked under Altitude.
Electrostatic chuck is fixed and supported chip using electrostatic attraction, with using mechanical chuck and vacuum card
Disk is fixed and supports chip to compare, and electrostatic chuck has many advantages.Electrostatic chuck is to utilize chip
The Coulomb force produced between electrode or Johnson-drawing Buick power (abbreviation J-R：Johnsen-Rahbek)
To reach the purpose of fixed wafer.A kind of structural representation of typical electrostatic chuck is such as in the prior art
Shown in Fig. 1, including insulating barrier 1, electrode 2 and metal base 3 are constituted.This electrostatic chuck makes
Used time, resistance to corrosion is poor, easily causes electrostatic adsorption force and declines and the reduction of electrostatic chuck life-span, electrostatic
Absorption affinity is uneven, and high to equipment requirement during manufacture.
The content of the invention
It is quiet that the present invention provides that a kind of resistance to corrosion is strong, electrostatic adsorption force is uniform and low for equipment requirements
Electric chuck assembly.
In order to solve the above technical problems, present invention offer technical scheme is as follows：
A kind of electrostatic chuck apparatus, including the first insulating barrier, the second insulating barrier, electrode layer and metal level,
First insulating barrier is arranged on the top of the second insulating barrier, and it is exhausted that the electrode layer is arranged on described first
Between edge layer and the second insulating barrier, second insulating barrier is arranged on the metal level, and described first
Insulating barrier is sapphire material.
Further, the upper surface of first insulating barrier is equably provided with salient point.
Further, multiple air flues and/or passage, described are equably provided with the metal level
Multiple air flues are respectively correspondingly evenly arranged with one insulating barrier, electrode layer and the second insulating barrier and/or logical
Stomata.
Further, second insulating barrier is sapphire.
The invention has the advantages that：
Compared with prior art, the present invention is used as electrostatic chuck the from the sapphire material of specific cut type
One insulating layer material, compared with traditional ceramics, its dielectric constant improves, so that quiet
After powered up, the electric field produced by electrode layer surface produces more sensings on the surface of chip to electric card disk
Electric charge, so as to increase the absorption affinity of electrostatic chuck, improves the uniformity of electrostatic chuck absorption affinity.And
And, the corrosion resistance of sapphire material is strong, under plasma and other special atmosphere environment,
The surface topography to electrostatic chuck, particularly salient point, groove, stomata etc. is difficult to impact, can be with
It is greatly enhanced the life-span of electrostatic chuck product.In addition, the production technology of large-size sapphire is ripe,
Domestic supply chain is complete, reasonable price, and electrostatic chuck first is directly used in after sapphire is processed and is insulated
Layer, has evaded the risk of ceramic high temperature sintering, the limit of particularly domestic large scale aluminium nitride ceramics sintering
System, can effectively evade the technology barriers of external electrostatic chuck.
Brief description of the drawings
The cross-sectional view of the quiet device of Fig. 1 electrostatic chucks of the prior art；
Fig. 2 is the cross-sectional view of the quiet device of electrostatic chuck of the present invention.
Embodiment
, below will knot to make the technical problem to be solved in the present invention, technical scheme and advantage clearer
Drawings and the specific embodiments are closed to be described in detail.
The present invention provides a kind of electrostatic chuck apparatus, as shown in Fig. 2 including the first insulating barrier 4, the
Two insulating barriers 6, electrode layer 5 and metal level 7, the first insulating barrier 4 are arranged on the second insulating barrier 6
Top, electrode layer 5 is arranged between the first insulating barrier 4 and the second insulating barrier 6, the second insulating barrier 6
It is arranged on metal level 7, the first insulating barrier is sapphire material.
Inventor it has been investigated that, metal base access RF bias, as cold-trap or supplying heat source, come
Control the temperature of chip.General insulating barrier is generally with ceramics manufacture, with one between ceramic layer and metal level
Binding agent is planted to bond.This electrostatic chuck when in use, due to ceramic layer on surface materials most be oxygen
Change aluminium ceramics or aluminium nitride ceramics, its resistance to corrosion is poor, easily cause electrostatic adsorption force and decline and electrostatic
The chuck life-span is smaller, and surface ceramic need to undergo high temperature sintering, but ceramic post sintering particularly large scale nitrogen
Change aluminium ceramic sintering process complicated, it is high to equipment requirement.Inventor has found after further study, this hair
Bright electrostatic chuck apparatus can preferably solve the above problems.
Compared with prior art, the present invention is used as electrostatic chuck the from the sapphire material of specific cut type
One insulating layer material, compared with traditional ceramics, its dielectric constant improves, so that quiet
After powered up, the electric field produced by electrode layer surface produces more sensings on the surface of chip to electric card disk
Electric charge, so as to increase the absorption affinity of electrostatic chuck, improves the uniformity of electrostatic chuck absorption affinity.And
And, the corrosion resistance of sapphire material is strong, under plasma and other special atmosphere environment,
The surface topography to electrostatic chuck, particularly salient point, groove, stomata etc. is difficult to impact, can be with
It is greatly enhanced the life-span of electrostatic chuck product.In addition, the production technology of large-size sapphire is ripe,
Domestic supply chain is complete, reasonable price, and electrostatic chuck first is directly used in after sapphire is processed and is insulated
Layer, has evaded the risk of ceramic high temperature sintering, the limit of particularly domestic large scale aluminium nitride ceramics sintering
System, can effectively evade the technology barriers of external electrostatic chuck.
As a modification of the present invention, the upper surface of the first insulating barrier 4 can equably be provided with convex
Point.The contact area of the first insulating barrier and chip can be so reduced, due to the reduction of contact area,
So that noncontact space of planes has the circulation of the inert gases such as enough helium so that the temperature of wafer surface
Change is more uniform；This structure can also provide stronger electrostatic adsorption force so that the present invention is to crystalline substance
The Electrostatic Absorption of piece is easier, and shortens the time of Electro-static Driven Comb, can improve the efficiency of chip processing.
Can be equably provided with as another improvement of the present invention, on metal level 7 multiple air flues and
Preferably respectively correspondingly it is uniformly arranged on/or passage, the first insulating barrier, electrode layer and the second insulating barrier
There are multiple air flues and/or passage.The inert gases such as helium are passed by the air flue between each layer and passage
Defeated then to be uniformly delivered to chip to the first insulating barrier, it is cold so can further to improve chip temperature
But or heated uniformity.
In the present invention, the second insulating barrier 6 is preferably sapphire.Second insulating barrier can also be that other are exhausted
Edge material.
To sum up, the invention has the advantages that：
1st, the first insulating layer material of electrostatic chuck of the invention uses sapphire, can reduce tradition
The risk that ceramic high temperature is sintered in integrated technique, the limit of particularly domestic large scale aluminium nitride ceramics sintering
System, can effectively evade the technology barriers of external electrostatic chuck；
2nd, sapphire material of the present invention can lift the resistance to corrosion of electrostatic chuck surface,
The final life-span for improving electrostatic chuck product；
3rd, the present invention is used as electrostatic chuck the first insulating barrier material from the sapphire material of specific cut type
Material, compared with traditional ceramics, its dielectric constant improves, so that electrostatic chuck is logical
After electricity, the electric field produced by electrode layer surface produces more charge inducings on the surface of chip, so that
The absorption affinity of electrostatic chuck can be increased.
4th, the solution integration flexibility that the present invention is used is strong, and electrostatic card can be realized by kinds of processes
Disk is integrated；
5th, the present invention is simple in construction, and easy to manufacture, cost is relatively low, can be widely popularized and use.
Described above is the preferred embodiment of the present invention, it is noted that for the general of the art
For logical technical staff, on the premise of principle of the present invention is not departed from, some change can also be made
Enter and retouch, these improvements and modifications also should be regarded as protection scope of the present invention.
Claims (4)
1. a kind of electrostatic chuck apparatus, it is characterised in that including the first insulating barrier, the second insulating barrier,
Electrode layer and metal level, first insulating barrier are arranged on the top of the second insulating barrier, the electrode layer
It is arranged between first insulating barrier and the second insulating barrier, second insulating barrier is arranged on the gold
Belong on layer, first insulating barrier is sapphire material.
2. electrostatic chuck apparatus according to claim 1, it is characterised in that described first is exhausted
The upper surface of edge layer is equably provided with salient point.
3. electrostatic chuck apparatus according to claim 1, it is characterised in that the metal level
On be equably provided with multiple air flues and/or passage, first insulating barrier, electrode layer and second are exhausted
Multiple air flues and/or passage are respectively correspondingly evenly arranged with edge layer.
4. according to any described electrostatic chuck apparatus in claims 1 to 3, it is characterised in that
Second insulating barrier is sapphire.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610122355.7A CN107154376A (en) | 2016-03-03 | 2016-03-03 | Electrostatic chuck apparatus |
| PCT/CN2016/098250 WO2017148126A1 (en) | 2016-03-03 | 2016-09-06 | Electrostatic chuck device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610122355.7A CN107154376A (en) | 2016-03-03 | 2016-03-03 | Electrostatic chuck apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107154376A true CN107154376A (en) | 2017-09-12 |
Family
ID=59742440
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610122355.7A Pending CN107154376A (en) | 2016-03-03 | 2016-03-03 | Electrostatic chuck apparatus |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN107154376A (en) |
| WO (1) | WO2017148126A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108538776A (en) * | 2018-03-29 | 2018-09-14 | 北京北方华创微电子装备有限公司 | Electrostatic chuck and its manufacturing method |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5413360A (en) * | 1992-12-01 | 1995-05-09 | Kyocera Corporation | Electrostatic chuck |
| CN1777987A (en) * | 2003-04-22 | 2006-05-24 | 艾克塞利斯技术公司 | High-performance electrostatic clamp comprising a resistive layer, micro-grooves, and dielectric layer |
| CN101405857A (en) * | 2006-03-17 | 2009-04-08 | 奥立孔美国公司 | Apparatus and method for carrying substrates |
| US8987639B2 (en) * | 2012-09-05 | 2015-03-24 | Varian Semiconductor Equipment Associates, Inc. | Electrostatic chuck with radiative heating |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN205406505U (en) * | 2016-03-03 | 2016-07-27 | 北京华卓精科科技股份有限公司 | Electrostatic chuck device |
| CN205406504U (en) * | 2016-03-03 | 2016-07-27 | 北京华卓精科科技股份有限公司 | Static chuck device of graphite alkene electrode |
-
2016
- 2016-03-03 CN CN201610122355.7A patent/CN107154376A/en active Pending
- 2016-09-06 WO PCT/CN2016/098250 patent/WO2017148126A1/en active Application Filing
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5413360A (en) * | 1992-12-01 | 1995-05-09 | Kyocera Corporation | Electrostatic chuck |
| CN1777987A (en) * | 2003-04-22 | 2006-05-24 | 艾克塞利斯技术公司 | High-performance electrostatic clamp comprising a resistive layer, micro-grooves, and dielectric layer |
| CN101405857A (en) * | 2006-03-17 | 2009-04-08 | 奥立孔美国公司 | Apparatus and method for carrying substrates |
| US8987639B2 (en) * | 2012-09-05 | 2015-03-24 | Varian Semiconductor Equipment Associates, Inc. | Electrostatic chuck with radiative heating |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108538776A (en) * | 2018-03-29 | 2018-09-14 | 北京北方华创微电子装备有限公司 | Electrostatic chuck and its manufacturing method |
| CN108538776B (en) * | 2018-03-29 | 2021-11-16 | 北京北方华创微电子装备有限公司 | Electrostatic chuck and method of manufacturing the same |
| US11309208B2 (en) | 2018-03-29 | 2022-04-19 | Beijing Naura Microelectronics Equipment Co., Ltd. | Electrostatic chuck and method for manufacturing protrusions thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2017148126A1 (en) | 2017-09-08 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20170912 |
|
| RJ01 | Rejection of invention patent application after publication |