CN104752118B - Plasma processing chamber and manufacturing method of electrostatic chuck of plasma processing chamber - Google Patents
Plasma processing chamber and manufacturing method of electrostatic chuck of plasma processing chamber Download PDFInfo
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- CN104752118B CN104752118B CN201310726396.3A CN201310726396A CN104752118B CN 104752118 B CN104752118 B CN 104752118B CN 201310726396 A CN201310726396 A CN 201310726396A CN 104752118 B CN104752118 B CN 104752118B
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- manufacture method
- ceramic bases
- electrostatic chuck
- metal contact
- contact wires
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/24—Manufacture or joining of vessels, leading-in conductors or bases
- H01J9/245—Manufacture or joining of vessels, leading-in conductors or bases specially adapted for gas discharge tubes or lamps
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Drying Of Semiconductors (AREA)
Abstract
The invention provides a plasma processing chamber and a manufacturing method of an electrostatic chuck of the plasma processing chamber. The manufacturing method comprises the following steps of providing a ceramic substrate, forming a plurality of through holes which are used for containing a plurality of metal connecting lines in the ceramic substrate, providing the metal connecting lines, cooling the metal connecting lines to be below a room temperature, embedding the cooled metal connecting lines into the through holes of the ceramic substrate, placing the ceramic substrate embedded with the metal connecting lines in the room temperature, placing a direct current electrode layer on the ceramic substrate, and coating an anticorrosive layer on the ceramic substrate placed with the direct current electrode layer. The metal connecting lines manufactured by the method cannot damage the direct current electrode layer, and continuous coating of an anticorrosive layer on the direct current electrode layer is very stable.
Description
Technical field
The present invention relates to field of semiconductor manufacture, the system of more particularly, to a kind of plasma process chamber and its electrostatic chuck
Make method.
Background technology
Plasma treatment appts carry out the base of semiconductor chip and plasma flat-plate using the operation principle of vacuum reaction chamber
The processing of piece.The operation principle of vacuum reaction chamber is to be passed through the reaction gas containing suitable etchant source gas in vacuum reaction chamber
Body, then carries out RF energy input to this vacuum reaction chamber again, with activated reactive gas, to excite and to maintain plasma,
So that the material layer respectively on etching substrate surface or depositing layer of material over the substrate surface, so to semiconductor chip and etc. from
Sub- flat board is processed.
Plasma process chamber includes a base station, is placed pending substrate above base station.Arrange above base station
There is an electrostatic chuck, electrostatic chuck is used for clamping substrate.A DC electrode has been embedded in the insulating barrier on electrostatic chuck upper strata,
DC electrode is connected with a dc source.Before substrate processing procedure starts, dc source puts on DC electrode so that direct current
Pole produces an absorption affinity, and substrate is held on base station.And work as after processing procedure terminates, close put on straight on DC electrode
Stream power supply, thus releasing the absorption affinity between substrate and electrostatic chuck, manipulator stretches within the chamber from exterior thereto, and by substrate
Smoothly remove out chamber.
DC electrode is usually embedded in the insulating barrier of electrostatic chuck, and DC electrode layer is typically very thin.And it is straight
Metal must be had between stream electrode and dc source to connect, be usually setting metal wire inside electrostatic chuck as connecting line.
But the DC electrode of very thin thickness is easy to produce rupture during setting metal wire.
The present invention is based on this proposition.
Content of the invention
For the problems referred to above in background technology, the present invention proposes a kind of plasma process chamber and its electrostatic chuck
Manufacture method.
First aspect present invention provides a kind of manufacture method of the electrostatic chuck of plasma process chamber, wherein, institute
State manufacture method to comprise the steps：
One ceramic bases are provided；
Some through holes are beaten on described ceramic bases, described through hole is used for accommodating metal contact wires；
Some metal contact wires are provided, described some metal contact wires are cooled to below room temperature, and if will cooling after
Dry metal contact wires are inlaid among described some through holes of described ceramic bases respectively；
By the above-mentioned ceramic bases having inlayed metal contact wires as normal temperature among；
DC electrode is placed on described ceramic bases；
Etch resistant layer is deposited on the ceramic bases that placed DC electrode layer.
Further, the diameter with diameter greater than the metal contact wires after cooling of described through hole.
Further, the coefficient of thermal expansion of described metal contact wires oil is much larger than ceramic bases and DC electrode layer.
Further, the material of described metal contact wires includes：Copper, silver, aluminium, gold.
Further, the material of described ceramic bases includes aluminum oxide.
Further, the material of described DC electrode includes tungsten.
Further, described manufacture method also comprises the steps：There is provided some copper metal connecting lines, if by described dry copper
Metal contact wires are cooled to less than -100 DEG C, and some metal contact wires after cooling are inlaid into described ceramic bases respectively
Among described some through holes.
Further, described manufacture method also comprises the steps：Using vacuum moulding machine or printing method by direct current
Electrode is placed on described ceramic bases.
Further, the material of described etch resistant layer includes yittrium oxide or yttrium nitride.
Further, described etch resistant layer to be coated by physical vapour deposition (PVD) or plasma spray coating.
Further, described manufacture method also comprises the steps：Soft metal connecting line is connected below metal contact wires.
Second aspect present invention provide a kind of plasma process chamber manufacture method it is characterised in that described
Manufacture method includes the manufacture method of the electrostatic chuck described in first aspect present invention.
Plasma process chamber and its manufacture method of electrostatic chuck that the present invention provides, can be successfully in direct current
Electrostatic chuck region setting metal contact wires below the layer of pole, will not damage to DC electrode layer, in order to follow-up quiet
The top layer coating etch resistant layer of electric chuck.
Brief description
Fig. 1 is the structural representation of plasma process chamber and lifting device；
Fig. 2 (a)～2 (d) is the electrostatic chuck system of the plasma process chamber according to one specific embodiment of the present invention
The process chart made；
Fig. 3 is the structural representation of the base station of the plasma process chamber of a specific embodiment according to the present invention.
Specific embodiment
Below in conjunction with accompanying drawing, the specific embodiment of the present invention is illustrated.
It is noted that " semiconductor arts piece ", " wafer " and " substrate " these words will be frequent in subsequent explanation
Used interchangeably, in the present invention, they all refer in the processed process conditions of process chamber, and process conditions are not limited to wafer, lining
Bottom, substrate, large-area flat-plate substrate etc..For convenience of explanation, herein will be mainly with " base in embodiment illustrates and illustrates
To make exemplary illustration as a example piece ".
Fig. 1 shows the structural representation of plasma process chamber and lifting device.Plasma process chamber 100 has
There are process chambers（Not shown）, process chambers are substantially cylindricality, and processing chamber body sidewall 102 perpendicular, process
There is in cavity Top electrode arranged in parallel and bottom electrode.Generally, the region between Top electrode and bottom electrode is to process
Region P, this region P will form high-frequency energy to light and to maintain plasma.Base to be processed is placed above base station 106
Piece W, this substrate W can be treat the semiconductor chip that will etch or process or wait flat-panel monitor to be processed into glass put down
Plate.Wherein, described base station 106 is used for clamping substrate W.Reacting gas is input to the gas in process chambers from gas source 103
Body spray head 109, one or more radio-frequency power supplies 104 can individually be applied respectively to be applied on the bottom electrode or simultaneously
On Top electrode and bottom electrode, in order to radio-frequency power is transported on bottom electrode or Top electrode and bottom electrode on, thus processing
Inside cavity produces big electric field.Most of electric field lines are comprised in the processing region P between Top electrode and bottom electrode, this electricity
Field accelerates to the electronics being present on a small quantity within process chambers, the gas molecule collision of the reacting gas being allowed to and inputting.
These collisions lead to the ionization of reacting gas and exciting of plasma, thus producing plasma in process chambers.Instead
The neutral gas molecule answering gas loses electronics when standing these highfields, leaves the ion of positively charged.Positively charged from
Son accelerates towards bottom electrode direction, is combined with the neutral substance in processed substrate, excites substrate to process, i.e. etching, deposit
Deng.It is provided with exhaust gas region, exhaust gas region and external exhaust at certain position suitable of plasma process chamber 100
Device（Such as vavuum pump 105）It is connected, in order to extract used reacting gas and bi-product gas out chamber in processing procedure
Room.Wherein, plasma confinement ring 107 is used for plasma confinement in processing region P.It is connected with chamber sidewall 102
Earth terminal, is provided with a resistance 108.
It is known that electrostatic chuck（ESC, electrostatic chuck) it is core in plasma process chamber
Assembly.Because electrostatic chuck is the carrier as bottom electrode and substrate, it is necessarily rigid and constitutionally stable, to prevent
Plasma bombardment and substrate abrasion during product processing procedure.However, the electrostatic chuck of prior art is mostly formed at bonding admittedly
Body ceramic disk is in anodized aluminium substrate.The ceramic disk of electrostatic chuck is generally by Al2O3Or AlN makes, and comprise one
A little metals and the mixture based on silicon, such as TiO2、SiO2Deng.When electrostatic chuck is comprising halogen（Such as F, Cl etc.）Deng
When operating in the environment of gas ions, the ceramic base of electrostatic chuck（Al2O3Or AlN）With the other compositions comprising all will by wait from
The bombardment of daughter, but the other compositions wherein comprising will be etched under relatively higher corrosion rate.Therefore, plasma
Corrosion can change the characteristic of form, composition and the ceramic base on electrostatic chuck surface（Surface roughness, resistance coefficient etc.）, and enter
One step leads to the change of the function of electrostatic chuck, such as leakage current, helium leakage rate, de-clamping time etc..
In order to stablize composition, structure and the characteristic of electrostatic chuck, prior art generally electrostatic chuck surface coating or
The material of encapsulation resisting plasma corrosion, to prevent electrostatic chuck by plasma etching.However, on electrostatic chuck with etc. from
Daughter sprays（Plasma spray, PS) mode coat etch resistant layer inadvisable, this is because plasma spray coating is for example
The etch resistant layer of yittrium oxide has frangible in pore and structure, and the etch resistant layer of yittrium oxide is softer than silicon wafer, so meeting
Lead to produce particle contamination in processing procedure.Physical vapour deposition (PVD) also can be utilized in prior art on the ceramic disk of electrostatic chuck
（Plasma enhanced physical vapour deposition, PEPVD) the anti-corruption of the hard plasma of deposition compact
Erosion layer, such as yittrium oxide or yittrium oxide/aluminum oxide mixing.However, directly deposit on electrostatic chuck surface technically having
Limit because depositing temperature generally easily reach 100 DEG C and more than, this is due to plasma in physical vapour deposition (PVD) processing procedure
Electrostatic chuck can be heated in body or coating deposition source.But, because the binder fusing point between ceramic matrix and aluminum substrate is relatively low, quiet
The temperature of electric chuck is not above 100 DEG C and above.
The disclosed method improving electrostatic chuck performance of prior art includes（1）First in the ceramic bases of electrostatic chuck
Coat the property improved etch resistant layer further, and（2）Then etch resistant layer ceramic bases and aluminium substrate shape are coated with by bonding
Become electrostatic chuck.Prior art makes it have a lot of particular characteristics by coating etch resistant layer on electrostatic chuck, for example high
Hardness, good thermal conductivity, durable structure are to resist the corrosion of multiple plasma chemistries.In fact, according to prior art
Electrostatic chuck production procedure, among the alumina substrate under DC electrode formed electric connecting point（electrical
joint）Also have a lot of technical problems.Specifically, DC electrode in electrostatic chuck has been mentioned above and is also associated with a direct current
The critical underface metal in DC electrode of alumina substrate in electrostatic chuck is needed on power supply, therefore technique as connection
Line.And the thinner thickness of DC electrode, the only only tungsten of 10～20um, and the quality of the etch resistant layer of top is more
Softness, therefore does metal contact wires after the formation of DC electrode layer again, and metal contact wires have and greatly may damage direct current
Pole layer.
The invention provides the manufacture method of a kind of plasma process chamber and its electrostatic chuck.As shown in figure 1, electrostatic
Chuck 101 is located at the top of base station 106, and it is used for clamping substrate W thereon, is provided with the material layer above electrostatic chuck
One direct current electrode layer 110, DC electrode layer 110 must be directly connected to a dc source 111, so that being applied with dc source
In the presence of 111, DC electrode layer 110 produces a chucking power clamping substrate W thereon.Therefore, in DC electrode layer
Must exist for the connecting line electrically connecting between 110 and dc source 111, and be also necessarily required to set in electrostatic chuck 101
Put metal connecting line.The goal of the invention of the present invention is that the connecting line be connected in DC electrode layer 110 and its with dc source 111
Between electrostatic chuck 101 associated materials layer field formed electrical connection（electrode joint）.
First aspect present invention provides a kind of manufacture method of the electrostatic chuck of plasma process chamber.Fig. 2 is root
The process chart manufacturing according to the electrostatic chuck of the plasma process chamber of one specific embodiment of the present invention.According to the present invention
A preferred embodiment, it makes use of principle of expanding with heat and contracting with cold（cooling and expansion）In DC electrode
Electrostatic chuck 101 associated materials layer field between layer 110 and its connecting line that is connected with dc source 111 is formed and is electrically connected
（electrode joint）.In the present embodiment, the manufacture method of described electrostatic chuck 101 comprises the steps：
As shown in Fig. 2 (a), provide ceramic bases 1012 first.
Then, some through holes 1014 are beaten on described ceramic bases 1012, described through hole 1014 is used for accommodating metal connection
Line.For simplicity's sake, illustrate only a through hole 1014 in Fig. 2 (a).
Then, as shown in Fig. 2 (b), some metal contact wires 1016 are provided, described some metal contact wires 1016 are cooled down
To below room temperature, therefore will be reduced, after now cooling down according to the volume of this metal contact wires 1016 of principle expanding with heat and contract with cold
Some metal contact wires 1016 be inlaid into respectively among described some through holes 1014 of described ceramic bases 1012.
Then, the ceramic bases 1012 having inlayed metal contact wires 1016 by above-mentioned as normal temperature among.Now, due to phase
Increase compared with temperature before, metal contact wires 1016 are all made up of the very high metal of coefficient of thermal expansion again, therefore, metal is even
Wiring 1016 will expand to fill up through hole 1014.
Then, as shown in Fig. 2 (b), DC electrode layer 110 is placed on described ceramic bases.Due to DC electrode layer
110 metal contact wires 1016 formed after just manufactured, therefore do not deposit in the prior art DC electrode layer 110 due to relatively
Defect that is thin and being destroyed by the metal contact wires 1016 of rear formation, this has absolutely proved the superiority of the present invention.Wherein, direct current
The thickness of pole layer 110 is about 0.2mm or less.
Finally, as shown in Fig. 2 (d), placed deposition etch resistant layer on the ceramic bases 1012 of DC electrode layer 110
1018, electrostatic chuck 101 manufactures and completes.Now, the ceramic bases 1012 under the DC electrode layer 110 of electrostatic chuck 101
Among successfully define electrical connection.
Especially, the diameter with diameter greater than the metal contact wires 1016 after cooling of described through hole 1014, so that metal
Connecting line 1016 can smoothly be inlaid among through hole 1014 under the state of cooling, and be expanded to and almost fill out after recovering room temperature
Full through hole 1014.Exemplarily, a diameter of 1mm of described through hole 1014.
Especially, the coefficient of thermal expansion of described metal contact wires 1016 is much larger than ceramic bases 1012 and DC electrode layer 110.
Following table has used the coefficient of thermal expansion of the metal material of ceramic bases 1012, DC electrode layer 110 and metal contact wires 1016.
Further, the material of described metal contact wires 1016 includes：Copper, silver, aluminium, gold, described ceramic bases 1012
Material includes aluminum oxide, and the material of described DC electrode layer 110 includes tungsten.As shown above, as metal contact wires 1016
Metallic material of aluminum, copper, silver, gold, the thermal coefficient of expansion of brass are much larger than material oxidation aluminium and nitridation as ceramic bases 1012
Aluminium and the tungsten as DC electrode layer 110.Therefore, under same room temperature condition, metal contact wires 1016 expand
More severe, therefore metal contact wires 1016 also just smoothly embedded among the ceramic bases 1012 of electrostatic chuck 101, this be due to
Present invention utilizes the difference of the coefficient of thermal expansion of the ceramic bases 2012 of electrostatic chuck 101 and metal contact wires 1016.
Further, described manufacture method also comprises the steps：There is provided some copper metal connecting lines, if by described dry copper
Metal contact wires are cooled to less than -100 DEG C, and some metal contact wires after cooling are inlaid into described ceramic bases respectively
Among described some through holes.
It should be noted that in the above-described embodiments, the diameter of metal contact wires 1016 is meticulous selection and calculates, with
It is made to narrow down to the through hole in the ceramic bases 1012 that can be suitable for electrostatic chuck 101 under cooling effect.
Further, described manufacture method also comprises the steps：Using vacuum moulding machine or printing（printing）'s
DC electrode layer 110 is placed on described ceramic bases 1012 method.
Further, the material of described etch resistant layer 1018 includes yittrium oxide or yttrium nitride.Specifically, electrostatic chuck 101
The etch resistant layer 1018 on top layer to be coated by physical vapour deposition (PVD) or plasma spray coating, and it has densification and high porosity
Structure, and there is plasma corrosion resistance.
Fig. 3 is the structural representation of the base station of the plasma process chamber of a specific embodiment according to the present invention.
Further, the manufacture method of the electrostatic chuck of plasma process chamber that the present invention provides also comprises the steps：In gold
Belong to connecting line and connect soft metal connecting line 1017 below 1016, thus completing whole connections of DC electrode 110 and dc source
Line.Wherein, in soft metal connecting line 1017 lower end, that is, manufacture one below base station 106 in soft metal connecting line 1017 and connect
Head 1017a, extends to connect the dc source 111 shown in Fig. 1.
As shown in figure 3, according to a variation of the present invention, can also the anti-corruption of applied in two coats on electrostatic chuck 101
Erosion layer, that is, one layer of etch resistant layer 1019 is coated with original etch resistant layer 1018, so that electrostatic chuck 101 has
The function of strengthening.The manufacture method of the electrostatic chuck 101 that the present invention provides is capable of on electrostatic chuck 101 continuously
Coated with multiple layer etch resistant layer, even if the quality of etch resistant layer is again soft again, does not result in the breakage of DC electrode layer 110 yet.
Second aspect present invention provides a kind of manufacture method of plasma process chamber, wherein, described manufacture method
Manufacture method including the electrostatic chuck described in first aspect present invention.
Although present disclosure has been made to be discussed in detail by above preferred embodiment, but it should be appreciated that above-mentioned
Description is not considered as limitation of the present invention.After those skilled in the art have read the above, for the present invention's
Multiple modifications and substitutions all will be apparent from.Therefore, protection scope of the present invention should be limited to the appended claims.
Additionally, any reference in claim should not be considered as limiting involved claim；" inclusion " one, word was not excluded for
Unlisted device or step in other claims or specification；The words such as " first ", " second " are only used for representing title, and
It is not offered as any specific order.
Claims (12)
1. a kind of manufacture method of the electrostatic chuck of plasma process chamber, wherein, described manufacture method comprises the steps：
One ceramic bases are provided；
Some through holes are beaten on described ceramic bases, described through hole is used for accommodating metal contact wires；
Some metal contact wires are provided, described some metal contact wires are cooled to below room temperature, and by some gold after cooling
Belong to connecting line to be inlaid into respectively among described some through holes of described ceramic bases；
The above-mentioned ceramic bases having inlayed metal contact wires are placed among normal temperature, described metal contact wires expand logical to fill up
Hole；
After ceramic bases are placed in step among normal temperature, DC electrode is placed on described ceramic bases；
Etch resistant layer is coated on the ceramic bases that placed DC electrode layer.
2. manufacture method according to claim 1 it is characterised in that described through hole with diameter greater than the metal after cooling even
The diameter of wiring.
3. manufacture method according to claim 2 is it is characterised in that the coefficient of thermal expansion of described metal contact wires is much larger than pottery
Porcelain substrate and DC electrode layer.
4. manufacture method according to claim 3 is it is characterised in that the material of described metal contact wires includes：Copper, silver,
Aluminium, gold.
5. manufacture method according to claim 3 is it is characterised in that the material of described ceramic bases includes aluminum oxide.
6. manufacture method according to claim 3 is it is characterised in that the material of described DC electrode layer includes tungsten.
7. manufacture method according to claim 1 is it is characterised in that described manufacture method also comprises the steps：There is provided
Some copper metal connecting lines, described some copper metal connecting lines are cooled to less than -100 DEG C, and by cooling after some metals
Connecting line is inlaid among described some through holes of described ceramic bases respectively.
8. manufacture method according to claim 1 is it is characterised in that described manufacture method also comprises the steps：Using
DC electrode is placed on described ceramic bases the method for vacuum moulding machine or printing.
9. manufacture method according to claim 1 is it is characterised in that the material of described etch resistant layer includes yittrium oxide, nitrogen
Change yttrium.
10. manufacture method according to claim 1 it is characterised in that described etch resistant layer be by physical vapour deposition (PVD) or
Plasma spray coating is coating.
11. manufacture methods according to claim 1 are it is characterised in that described manufacture method also comprises the steps：In gold
Belong to below connecting line and connect soft metal connecting line.
A kind of 12. manufacture methods of plasma process chamber it is characterised in that described manufacture method include claim 1 to
The manufacture method of the electrostatic chuck described in 11 any one.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310726396.3A CN104752118B (en) | 2013-12-25 | 2013-12-25 | Plasma processing chamber and manufacturing method of electrostatic chuck of plasma processing chamber |
| TW103145166A TWI574294B (en) | 2013-12-25 | 2014-12-24 | A method of manufacturing a plasma processing chamber and an electrostatic chuck thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310726396.3A CN104752118B (en) | 2013-12-25 | 2013-12-25 | Plasma processing chamber and manufacturing method of electrostatic chuck of plasma processing chamber |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104752118A CN104752118A (en) | 2015-07-01 |
| CN104752118B true CN104752118B (en) | 2017-02-15 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310726396.3A Active CN104752118B (en) | 2013-12-25 | 2013-12-25 | Plasma processing chamber and manufacturing method of electrostatic chuck of plasma processing chamber |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN104752118B (en) |
| TW (1) | TWI574294B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102396865B1 (en) | 2021-12-08 | 2022-05-12 | 주식회사 미코세라믹스 | Electro static chuck |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6104596A (en) * | 1998-04-21 | 2000-08-15 | Applied Materials, Inc. | Apparatus for retaining a subtrate in a semiconductor wafer processing system and a method of fabricating same |
| TW522539B (en) * | 2002-02-25 | 2003-03-01 | Taiwan Semiconductor Mfg | Multi-metal-layer interconnect structure and method for testing strength of intermetal dielectric layer |
| US7072165B2 (en) * | 2003-08-18 | 2006-07-04 | Axcelis Technologies, Inc. | MEMS based multi-polar electrostatic chuck |
| CN100481366C (en) * | 2003-11-14 | 2009-04-22 | 爱德牌工程有限公司 | Electrostatic chuck, substrate support, clamp and electrode structure and producing method thereof |
| KR100677169B1 (en) * | 2005-05-12 | 2007-02-02 | 플루오르테크주식회사 | The Electrostatic Churk for Flat Panel Display |
| JP2007258615A (en) * | 2006-03-24 | 2007-10-04 | Ngk Insulators Ltd | Electrostatic chuck |
| JP4994121B2 (en) * | 2006-08-10 | 2012-08-08 | 東京エレクトロン株式会社 | Electrostatic chucking electrode, substrate processing apparatus, and method of manufacturing electrostatic chucking electrode |
| JP4808258B2 (en) * | 2006-09-19 | 2011-11-02 | 株式会社クリエイティブ テクノロジー | Electrostatic chuck feeding structure, method for manufacturing the same, and method for regenerating electrostatic chuck feeding structure |
| CN101872713B (en) * | 2009-04-24 | 2012-03-28 | 中微半导体设备(上海)有限公司 | Electrostatic chuck device, plasma processing device and method for manufacturing electrostatic chuck device |
| KR20120000745A (en) * | 2010-06-28 | 2012-01-04 | 주식회사 메트로테크 | The ceramics electrostatic support chuck |
| US9281226B2 (en) * | 2012-04-26 | 2016-03-08 | Applied Materials, Inc. | Electrostatic chuck having reduced power loss |
-
2013
- 2013-12-25 CN CN201310726396.3A patent/CN104752118B/en active Active
-
2014
- 2014-12-24 TW TW103145166A patent/TWI574294B/en active
Also Published As
| Publication number | Publication date |
|---|---|
| TWI574294B (en) | 2017-03-11 |
| CN104752118A (en) | 2015-07-01 |
| TW201535457A (en) | 2015-09-16 |
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Address after: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee after: Medium and Micro Semiconductor Equipment (Shanghai) Co., Ltd. Address before: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee before: Advanced Micro-Fabrication Equipment (Shanghai) Inc. |
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