CN107146785A - Fan-out package structure of antenna and preparation method thereof is stacked with 3D - Google Patents
Fan-out package structure of antenna and preparation method thereof is stacked with 3D Download PDFInfo
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- CN107146785A CN107146785A CN201710476280.7A CN201710476280A CN107146785A CN 107146785 A CN107146785 A CN 107146785A CN 201710476280 A CN201710476280 A CN 201710476280A CN 107146785 A CN107146785 A CN 107146785A
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/66—High-frequency adaptations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/12—Supports; Mounting means
- H01Q1/22—Supports; Mounting means by structural association with other equipment or articles
- H01Q1/2283—Supports; Mounting means by structural association with other equipment or articles mounted in or on the surface of a semiconductor substrate as a chip-type antenna or integrated with other components into an IC package
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
- H01L2223/64—Impedance arrangements
- H01L2223/66—High-frequency adaptations
- H01L2223/6661—High-frequency adaptations for passive devices
- H01L2223/6677—High-frequency adaptations for passive devices for antenna, e.g. antenna included within housing of semiconductor device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04105—Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/12105—Bump connectors formed on an encapsulation of the semiconductor or solid-state body, e.g. bumps on chip-scale packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
- H01L2224/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
- H01L2224/241—Disposition
- H01L2224/24135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/24137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/96—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being encapsulated in a common layer, e.g. neo-wafer or pseudo-wafer, said common layer being separable into individual assemblies after connecting
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
Abstract
The present invention provides a kind of fan-out package structure that antenna is stacked with 3D and preparation method thereof, the encapsulating structure includes chip structure, chip structure includes bare chip and the contact pad electrically connected on bare chip and with bare chip, and surface where contact pad is the upper surface of chip structure；Chip structure is surrounded, while exposing the plastic packaging layer of chip structure upper surface；Re-wiring layer positioned at plastic packaging layer upper surface and chip structure upper surface, re-wiring layer is electrically connected with contact pad；The 3D on plastic packaging layer on the outside of re-wiring layer stacks antenna, and 3D stacks antenna and electrically connected by re-wiring layer with chip structure；And the soldered ball projection on re-wiring layer, soldered ball projection electrically connects with re-wiring layer.By fan-out package structure of the present invention that antenna is stacked with 3D and preparation method thereof, existing radio frequency chip is solved when in use to ensure antenna gain, causes the problem of pcb board area becomes big.
Description
Technical field
The present invention relates to technical field of semiconductor encapsulation, more particularly to a kind of fan-out package that antenna is stacked with 3D
Structure and preparation method thereof.
Background technology
It is more inexpensive, more reliable, faster and more highdensity circuit be integrated antenna package pursue target.In future,
Integrated antenna package will improve the integration density of various electronic components by constantly reducing minimum feature size.At present, first
The method for packing entered includes：Wafer chip level chip-scale package (Wafer Level Chip Scale Packaging,
WLCSP), fan-out-type wafer-level packaging (Fan-Out Wafer Level Package, FOWLP), flip-chip (Flip
Chip), stacked package (Package on Package, POP) etc..
Fan-out-type wafer-level packaging is a kind of embedded chip method for packing of wafer level processing, be current a kind of input/
Output port (I/O) is more, one of the integrated preferable Advanced Packaging method of flexibility.Fan-out-type wafer-level packaging is compared to routine
Wafer-level packaging have the advantages that its is unique：1. I/O spacing is flexible, independent of chip size；2. effective nude film is only used
(die), product yield is improved；3. there is flexible 3D package paths, you can to form the figure of General Cell at top；4. have
There are preferable electrical property and hot property；5. frequency applications；6. easily high-density wiring is realized in re-wiring layer (RDL).
At present, the fan-out-type wafer-level packaging method of radio frequency chip is generally：Carrier is provided, bonded in carrier surface formation
Layer；On adhesive layer photoetching, electroplate out re-wiring layer (Redistribution Layers, RDL)；Using chip bonding work
Radio frequency chip is installed on re-wiring layer by skill；Using Shooting Technique by chip plastic packaging in capsulation material layer in；Remove carrier
And adhesive layer；Photoetching, plating form Underbump metallization layer (UBM) on re-wiring layer；Carry out planting ball backflow, shape on UBM
Into soldered ball projection；Then carry out wafer and stick piece, cutting scribing.For the consideration of communication efficiency, radio frequency chip all can when in use
Antenna is set, and existing radio-frequency antenna is all developer when carrying out layout designs to radio-frequency enabled module, directly in pcb board
Upper layout antennas or the interface for reserving external antenna；But due to the inconvenience of external antenna, existing radio-frequency antenna is mostly direct
The layout antennas on pcb board, and such a method will ensure antenna gain, just must be to sacrifice PCB surface product as cost.
In consideration of it, being necessary that a kind of new fan-out package structure that there is 3D to stack antenna of design and preparation method thereof is used
To solve above-mentioned technical problem.
The content of the invention
The shortcoming of prior art in view of the above, it is an object of the invention to provide a kind of fan that antenna is stacked with 3D
Go out type encapsulating structure and preparation method thereof, for solving existing radio frequency chip when in use to ensure antenna gain, cause pcb board
The problem of area becomes big.
In order to achieve the above objects and other related objects, the present invention provides a kind of fan-out package that antenna is stacked with 3D
Structure, the encapsulating structure includes：
Chip structure, the chip structure includes bare chip and is electrically connected on the bare chip and with the bare chip
The contact pad connect, wherein, surface where the contact pad is the upper surface of the chip structure；
The chip structure is surrounded, while exposing the plastic packaging layer of the chip structure upper surface；
Re-wiring layer positioned at plastic packaging layer upper surface and chip structure upper surface, wherein, the re-wiring layer
Electrically connected with the contact pad；
The 3D on plastic packaging layer on the outside of the re-wiring layer stacks antenna, wherein, the 3D stacks antenna and passed through
The re-wiring layer is electrically connected with the chip structure；And
Soldered ball projection on the re-wiring layer, wherein, the soldered ball projection is electrically connected with the re-wiring layer
Connect.
Preferably, the re-wiring layer is included positioned at plastic packaging layer and chip structure upper surface, by alternately insulating
The first laminated construction that layer and metal level are constituted, the top layer of first laminated construction is metal level, and the first lamination knot
The first layer metal layer of structure is electrically connected with the contact pad, and adjacent two layers metal level passes through the gold through respective insulation layers
Category plug is electrically connected, wherein, the alternate number of times is not less than 2 times.
Preferably, the 3D stacks antenna including the plastic packaging layer upper surface on the outside of the re-wiring layer, by alternately
Insulating barrier and the second laminated construction for constituting of metal level, the top layer of second laminated construction is metal level, and adjacent two layers
Metal level is electrically connected by the metal plug through respective insulation layers, wherein, the alternate number of times is not less than 2 times.
Preferably, the encapsulating structure also includes the second antenna for being located at plastic packaging layer lower surface, wherein, described second
Antenna stacks antenna with the 3D by metal connecting structure and electrically connected.
Preferably, it is rectangle winding-type structure that the 3D, which stacks antenna, surrounds the re-wiring layer.
Preferably, the soldered ball projection includes the metal column positioned at the re-wiring layer upper surface, and positioned at the gold
Belong to the soldered ball of post upper surface.
The present invention also provides a kind of preparation method for the fan-out package structure that antenna is stacked with 3D, the preparation method
Including：
1) carrier is provided, adhesive layer is formed on a surface of the carrier；
2) chip structure is formed on a surface of the adhesive layer, the chip structure includes bare chip and positioned at described naked
The contact pad electrically connected on chip and with the bare chip, wherein, surface where the contact pad is the chip structure
Upper surface, and the upper surface of the chip structure contacts with a surface of the adhesive layer；
3) plastic packaging layer, the plastic packaging layer cladding chip structure are formed on the surface of adhesive layer one；
4) carrier and the adhesive layer are removed, to expose the upper surface of the chip structure；
5) re-wiring layer is formed in plastic packaging layer upper surface and chip structure upper surface, while in the rewiring
3D, which is formed, on plastic packaging layer on the outside of layer stacks antenna, wherein, the re-wiring layer is electrically connected with the contact pad, the 3D
Antenna is stacked to electrically connect with the chip structure by the re-wiring layer；
6) soldered ball projection is formed on the re-wiring layer, the soldered ball projection is electrically connected with the re-wiring layer.
Preferably, the method for the re-wiring layer is formed in 5) to be included：In plastic packaging layer upper surface and chip structure
Upper surface is alternatively formed the first laminated construction of insulating barrier and metal level, and the top layer of first laminated construction is metal level, and
First laminated construction first layer metal layer be electrically connected with the contact pad, adjacent two layers metal level by through
The metal plug of respective insulation layers is electrically connected, wherein, the alternate number of times is not less than 2 times.
Preferably, the method for the 3D stackings antenna is formed in 5) to be included：While forming the re-wiring layer, in institute
The second laminated construction that the layer of the plastic packaging on the outside of re-wiring layer upper surface is alternatively formed insulating barrier and metal level is stated, described second folds
The top layer of Rotating fields is metal level, and adjacent two layers metal level is electrically connected by the metal plug through respective insulation layers,
Wherein, the alternate number of times is not less than 2 times.
Preferably, the step of also including preparing the second antenna in 5), the step includes：
A) photoetching is carried out to the lower surface of plastic packaging layer, the first opening that the 3D stacks antenna is exposed to be formed；
B) formed in the described first opening and stack the metal connecting structure that antenna is electrically connected with the 3D；
C) the second antenna electrically connected in plastic packaging layer lower surface formation with the metal connecting structure.
Preferably, using compressing and forming process, transfer shaping technology, hydraulic seal moulding process, vacuum lamination work in 3)
Skill or spin coating proceeding form the plastic packaging layer.
Preferably, the step of soldered ball projection is formed in 6) includes first forming metal column in the re-wiring layer upper surface,
Then soldered ball is formed in the metal column upper surface.
As described above, the 3D of the present invention stacks fan-out package structure of antenna and preparation method thereof, with following beneficial
Effect：
1st, the present invention forms 3D on the outside of it while the re-wiring layer is formed and stacks antenna, extra not increasing
In the case of processing step and cost of manufacture, the preparation that 3D stacks antenna is realized.
2nd, the present invention can form larger area long by using 3D stack manners formation antenna in less region area
The antenna of degree, substantially increases the gain of antenna, both ensure that the stability of radio frequency chip, while also improving communication distance.
3rd, the present invention in the encapsulating structure of radio frequency chip by forming antenna so that it is in subsequent applications without carrying out
Antenna layout, solves existing radio frequency chip when in use to ensure antenna gain, causes asking for pcb board area increase
Topic, both ensure that the antenna gain of radio frequency chip was sufficiently large, while also ensure that the area of pcb board is sufficiently small.
Brief description of the drawings
Fig. 1~Fig. 8 is shown as each making step schematic diagram of encapsulating structure of the present invention, wherein, Fig. 8 is described in Fig. 7
The top view of encapsulating structure.
Component label instructions
1 carrier
2 adhesive layers
3 chip structures
31 bare chips
32 contact pads
4 plastic packagings layer
5 re-wiring layers
6 3D stack antenna
51st, 61 insulating barrier
52nd, 62 metal level
7 metal connecting structures
8 second antennas
9 soldered ball projections
91 metal columns
92 soldered balls
1)~6) step
A)~c) step
Embodiment
Embodiments of the present invention are illustrated by particular specific embodiment below, those skilled in the art can be by this explanation
Content disclosed by book understands other advantages and effect of the present invention easily.
Fig. 1 is referred to Fig. 8.It should be clear that structure, ratio, size depicted in this specification institute accompanying drawings etc., is only used to
Coordinate the content disclosed in the specification of carrier 1, so that those skilled in the art is understood with reading, be not limited to the present invention
Enforceable qualifications, therefore do not have technical essential meaning, the modification of any structure, the change of proportionate relationship or size
Adjustment, in the case where not influenceing effect of the invention that can be generated and the purpose that can reach, all should still fall disclosed
Technology contents are obtained in the range of covering.Meanwhile, it is cited such as " on ", " under ", "left", "right", " centre " in this specification
And the term of " one " etc., understanding for narration is merely convenient to, and be not used to limit enforceable scope of the invention, its relativeness
Be altered or modified, under without essence change technology contents, when being also considered as enforceable category of the invention.
Embodiment one
As shown in Figures 1 to 8, the present embodiment provides a kind of preparation side for the fan-out package structure that antenna is stacked with 3D
Method, the preparation method includes：
1) carrier 1 is provided, adhesive layer 2 is formed on a surface of the carrier 1；
2) chip structure 3 is formed on a surface of the adhesive layer 2, the chip structure 3 includes bare chip 31 and is located at
The contact pad 32 electrically connected on the bare chip 31 and with the bare chip 31, wherein, the place surface of contact pad 32
For the upper surface of the chip structure 3, and the upper surface of the chip structure 3 is contacted with a surface of the adhesive layer 2；
3) plastic packaging layer 4, the cladding chip structure 3 of plastic packaging layer 4 are formed on the surface of adhesive layer 2 one；
4) carrier 1 and the adhesive layer 2 are removed, to expose the upper surface of the chip structure 3；
5) the plastic packaging layer 4 upper surface and the upper surface of chip structure 3 formed re-wiring layer 5, while it is described again
3D, which is formed, on the plastic packaging layer 4 in the outside of wiring layer 5 stacks antenna 6, wherein, the re-wiring layer 5 and the electricity of contact pad 32
Connection, the 3D stacks antenna 6 and electrically connected by the re-wiring layer 5 with the chip structure 3；
6) soldered ball projection 9 is formed on the re-wiring layer 5, the soldered ball projection 9 is electrically connected with the re-wiring layer 5
Connect.
Fig. 1 to Fig. 8 is referred to below to the preparation for the fan-out package structure that there is 3D to stack antenna described in the present embodiment
Method is described in detail.
As shown in Figure 1 there is provided a carrier 1, adhesive layer 2 is formed on a surface of the carrier 1.
As an example, the material of the carrier 1 includes but is not limited to silicon, glass, silica, ceramics, polymer and gold
Category one or both of more than composite, its shape can for wafer shape, it is square or it is other arbitrarily needed for shape；This reality
Apply example prevents subsequent preparation process SMIS chip architecture 3 from occurring the problems such as rupture, warpage, fracture by the carrier 1.
As an example, the material of the adhesive layer 2 includes but is not limited to adhesive tape, adhesive glue, epoxy resin (Epoxy), silicon
One kind in rubber (silicone rubber), polyimides (PI), polybenzoxazoles (PBO) or benzocyclobutene (BCB)；
Made by (ultraviolet) solidifications of UV or heat cure, for the separating layer as carrier 1 and the chip-packaging structure being subsequently formed.
As shown in Fig. 2 forming chip structure 3 on a surface of the adhesive layer 2, the chip structure 3 includes bare chip
31 and the contact pad 32 that is electrically connected on the bare chip 31 and with the bare chip 31, wherein, the contact pad 32
Place surface is the upper surface of the chip structure 3, and a surface of the upper surface of the chip structure 3 and the adhesive layer 2
Contact.
It should be noted that chip structure 3 described in the present embodiment is existing any radio communication chip, for sending
With the reception communication information.
As an example, one kind that the material of the contact pad 32 includes but is not limited in copper, aluminium, nickel, gold, silver, tin, titanium
Or it is two or more.
As shown in figure 3, plastic packaging layer 4 is formed on the surface of adhesive layer 2 one, the cladding chip structure of plastic packaging layer 4
3。
As an example, the material of plastic packaging layer 4 include but is not limited in polyimides, silica gel or epoxy resin one
Kind；Prepared using compressing and forming process, transfer shaping technology, hydraulic seal moulding process, vacuum lamination process or spin coating proceeding
Obtain.
It should be noted that the plastic packaging layer formed by above-mentioned technique, it is tightly enclosed in the side wall of the chip structure
Surface, it is to avoid gap occur in the sidewall surfaces of chip structure, are prevented effectively from the appearance of interface debonding, substantially increase the envelope
The stability of assembling structure.
As shown in figure 4, the carrier 1 and the adhesive layer 2 are removed, to expose the upper surface of the chip structure 3.
As an example, removing the carrier 1 and the adhesive layer 2 using grinding technics or reduction process etc..
As shown in figure 5, re-wiring layer 5 is formed in the plastic packaging 4 upper surface of layer and the upper surface of chip structure 3, while
3D, which is formed, on the plastic packaging layer 4 in the outside of re-wiring layer 5 stacks antenna 6, wherein, the re-wiring layer 5 is contacted with described
Pad 32 is electrically connected, and the 3D stacks antenna 6 and electrically connected by the re-wiring layer 5 with the chip structure 3.
As an example, forming the method for the re-wiring layer 5 includes：In the plastic packaging 4 upper surface of layer and chip structure 3
Upper surface is alternatively formed the first laminated construction of insulating barrier 51 and metal level 52, and the top layer of first laminated construction is metal
Layer, and the first layer metal layer of first laminated construction is electrically connected with the contact pad, adjacent two layers metal level is logical
The metal plug crossed through respective insulation layers is electrically connected, wherein, the alternate number of times is not less than 2 times.
As an example, forming the method for the 3D stackings antenna 6 includes：While forming re-wiring layer 5, in institute
4 upper surface of plastic packaging layer for stating the outside of re-wiring layer 5 are alternatively formed the second laminated construction of insulating barrier 61 and metal level 62, described
The top layer of second laminated construction is metal level, and adjacent two layers metal level carries out electricity by the metal plug through respective insulation layers
Connection, wherein, the alternate number of times is not less than 2 times.
Preferably, in the present embodiment, the re-wiring layer 5 and the 3D stack insulating barrier and metal level in antenna 6
Alternate frequency be 3 times.
It should be noted that while the re-wiring layer is made, the 3D is made on the outside of it and stacks antenna,
In the case of not increasing additional technical steps and cost of manufacture, the preparation that 3D stacks antenna is realized；And using 3D stacking sides
Formula formation antenna, can form the antenna of larger area length in less region area, substantially increase the gain of antenna, both
The stability of radio frequency chip is ensure that, while also improving communication distance.
As an example, as shown in fig. 6, the step of the present embodiment also includes preparing the second antenna, the step includes：
A) photoetching is carried out to the lower surface of plastic packaging layer 4, the first opening that the 3D stacks antenna is exposed to be formed；
B) formed in the described first opening and stack the metal connecting structure 7 that antenna is electrically connected with the 3D；
C) the second antenna 8 electrically connected in plastic packaging layer 4 lower surfaces formation with the metal connecting structure 7.
It should be noted that by preparing the second antenna 8 in the lower surface of plastic packaging layer 4, two-sided antenna structure is formed,
Preferable antenna gain has not only been obtained, and has more substantially increased the communication performance of the encapsulating structure.
As an example, the material of the insulating barrier includes but is not limited to silica or PET (polyethylene terephthalates
Ester), prepared by techniques such as spin coating, chemical vapor deposition method (CVD), plasma enhanced CVDs.
As an example, the metal level, metal plug, the material of metal connecting structure and the second antenna include but not limited
More than one or both of copper, aluminium, nickel, gold, silver, tin, titanium, pass through physical gas-phase deposition (PVD), chemical gaseous phase
Depositing operation (CVD), sputtering, plating or chemical plating are prepared.
As shown in fig. 7, soldered ball projection 9 is formed on the re-wiring layer 5, the soldered ball projection 9 and the cloth again
Line layer 5 is electrically connected.
As an example, the step of forming soldered ball projection 9 includes first forming metal column in the upper surface of re-wiring layer 5
91, then form soldered ball 92 in the upper surface of metal column 91.
As an example, the material of the metal column 91 and soldered ball 92 includes but is not limited to copper, aluminium, nickel, gold, silver, tin, titanium
One or both of more than；Wherein, the metal column 91 passes through physical gas-phase deposition (PVD), chemical vapor deposition work
One kind in skill (CVD), sputtering, plating or chemical plating is prepared, and the soldered ball 92 is prepared by planting ball reflux technique.
As an example, by described in the present embodiment preparation method prepare the encapsulating structure top view as shown in figure 8,
Wherein, the 3D stacks antenna and surrounds the re-wiring layer, i.e., it is rectangle winding-type that 3D, which stacks antenna, described in the present embodiment；
Certainly, in other embodiments, it can also be other shapes that the 3D, which stacks antenna, such as circular winding-type, arch.
Embodiment two
As shown in fig. 7, the present embodiment provides a kind of fan-out package structure that antenna is stacked with 3D, the encapsulating structure
Including：
Chip structure 3, the chip structure 3 include bare chip 31 and on the bare chip 31 and with the naked core
The contact pad 32 that piece 31 is electrically connected, wherein, the place surface of contact pad 32 is the upper surface of the chip structure 3；
The chip structure 3 is surrounded, while exposing the plastic packaging layer 4 of the upper surface of chip structure 3；
Re-wiring layer 5 positioned at the plastic packaging 4 upper surface of layer and the upper surface of chip structure 3, wherein, the rewiring
Layer 5 is electrically connected with the contact pad 32；
3D on the plastic packaging layer 4 in the outside of re-wiring layer 5 stacks antenna 6, wherein, the 3D stacks antenna 6
Electrically connected by the re-wiring layer 5 with the chip structure 3；And
Soldered ball projection 9 on the re-wiring layer 5, wherein, the soldered ball projection 8 and the re-wiring layer 5
Electrical connection.
As an example, one kind that the material of the contact pad 32 includes but is not limited in copper, aluminium, nickel, gold, silver, tin, titanium
Or it is two or more.
As an example, the material of plastic packaging layer 4 include but is not limited in polyimides, silica gel or epoxy resin one
Kind；Pass through the sidewall surfaces that plastic packaging layer 4 is tightly enclosed in the chip structure 3, it is to avoid the side wall table of chip structure 3
There is gap in face, is prevented effectively from the appearance of interface debonding, substantially increases the stability of the encapsulating structure.
As an example, the re-wiring layer 5 is included positioned at plastic packaging layer 4 and the upper surface of chip structure 3, by alternate
The first laminated construction that insulating barrier 51 and metal level 52 are constituted, the top layer of first laminated construction is metal level, and described the
The first layer metal layer of one laminated construction is electrically connected with the contact pad, and adjacent two layers metal level passes through through corresponding exhausted
The metal plug of edge layer is electrically connected, wherein, the alternate number of times is not less than 2 times.
As an example, the 3D stack antenna 6 include being located at 4 upper surface of plastic packaging layer in the outside of re-wiring layer 5, by
The second laminated construction that alternate insulating barrier 61 and metal level 62 are constituted, the top layer of second laminated construction is metal level, and
Adjacent two layers metal level is electrically connected by the metal plug through respective insulation layers, wherein, the alternate number of times is not
Less than 2 times.
Preferably, in the present embodiment, the re-wiring layer 5 and the 3D stack insulating barrier and metal level in antenna 6
Alternate frequency be 3 times.
It should be noted that while the re-wiring layer is made, the 3D is made on the outside of it and stacks antenna,
In the case of not increasing additional technical steps and cost of manufacture, the preparation that 3D stacks antenna is realized；And using 3D stacking sides
Formula formation antenna, can form the antenna of larger area length in less region area, substantially increase the gain of antenna, both
The stability of radio frequency chip is ensure that, while also improving communication distance.
As an example, the encapsulating structure also includes the second antenna 8 for being located at the plastic packaging 4 lower surface of layer, wherein, it is described
Second antenna 8 stacks antenna 6 with the 3D by metal connecting structure 7 and electrically connected.
It should be noted that by preparing the second antenna 8 in the lower surface of plastic packaging layer 4, two-sided antenna structure is formed,
Preferable antenna gain has not only been obtained, and has more substantially increased the communication performance of the encapsulating structure.
As an example, the material of the insulating barrier includes but is not limited to silica or PET (polyethylene terephthalates
Ester)；The metal level, metal plug, metal connecting structure, the second antenna material include but is not limited to copper, aluminium, nickel, gold,
It is more than one or both of silver, tin, titanium.
As an example, the soldered ball projection 9 includes the metal column 91 positioned at the upper surface of re-wiring layer 5, and it is located at
The soldered ball 92 of the upper surface of metal column 91.
As an example, the material of the metal column 91 and soldered ball 92 includes but is not limited to copper, aluminium, nickel, gold, silver, tin, titanium
One or both of more than.
As an example, the top view of encapsulating structure described in the present embodiment is as shown in figure 8, wherein, the 3D stacks antenna bag
The re-wiring layer is enclosed, i.e., it is rectangle winding-type that 3D, which stacks antenna, described in the present embodiment；Certainly, in other embodiments,
It can also be other shapes that the 3D, which stacks antenna, such as circular winding-type, arch.
In summary, 3D of the invention stacks fan-out package structure of antenna and preparation method thereof, with following beneficial
Effect：
1st, the present invention forms 3D on the outside of it while the re-wiring layer is formed and stacks antenna, extra not increasing
In the case of processing step and cost of manufacture, the preparation that 3D stacks antenna is realized.
2nd, the present invention can form larger area long by using 3D stack manners formation antenna in less region area
The antenna of degree, substantially increases the gain of antenna, both ensure that the stability of radio frequency chip, while also improving communication distance.
3rd, the present invention in the encapsulating structure of radio frequency chip by forming antenna so that it is in subsequent applications without carrying out
Antenna layout, solves existing radio frequency chip when in use to ensure antenna gain, causes asking for pcb board area increase
Topic, both ensure that the antenna gain of radio frequency chip was sufficiently large, while also ensure that the area of pcb board is sufficiently small.
So, the present invention effectively overcomes various shortcoming of the prior art and has high industrial utilization.
The above-described embodiments merely illustrate the principles and effects of the present invention, not for the limitation present invention.It is any ripe
Know the personage of this technology all can carry out modifications and changes under the spirit and scope without prejudice to the present invention to above-described embodiment.Cause
This, those of ordinary skill in the art is complete without departing from disclosed spirit and institute under technological thought such as
Into all equivalent modifications or change, should by the present invention claim be covered.
Claims (12)
1. a kind of fan-out package structure that antenna is stacked with 3D, it is characterised in that the encapsulating structure includes：
Chip structure, the chip structure includes bare chip and electrically connected on the bare chip and with the bare chip
Contact pad, wherein, surface where the contact pad is the upper surface of the chip structure；
The chip structure is surrounded, while exposing the plastic packaging layer of the chip structure upper surface；
Re-wiring layer positioned at plastic packaging layer upper surface and chip structure upper surface, wherein, the re-wiring layer and institute
State contact pad electrical connection；
The 3D on plastic packaging layer on the outside of the re-wiring layer stacks antenna, wherein, the 3D stackings antenna passes through described
Re-wiring layer is electrically connected with the chip structure；And
Soldered ball projection on the re-wiring layer, wherein, the soldered ball projection is electrically connected with the re-wiring layer.
2. the fan-out package structure according to claim 1 that antenna is stacked with 3D, it is characterised in that the cloth again
Line layer includes the first lamination knot for being located at plastic packaging layer and chip structure upper surface, being made up of alternate insulating barrier and metal level
Structure, the top layer of first laminated construction is metal level, and the first layer metal layer of first laminated construction is contacted with described
Pad is electrically connected, and adjacent two layers metal level is electrically connected by the metal plug through respective insulation layers, wherein, it is described
Alternate number of times is not less than 2 times.
3. the fan-out package structure according to claim 1 that antenna is stacked with 3D, it is characterised in that the 3D is stacked
Antenna includes the plastic packaging layer upper surface on the outside of the re-wiring layer, be made up of alternate insulating barrier and metal level second
Laminated construction, the top layer of second laminated construction is metal level, and adjacent two layers metal level passes through through respective insulation layers
Metal plug is electrically connected, wherein, the alternate number of times is not less than 2 times.
4. the fan-out package structure according to claim 1 that antenna is stacked with 3D, it is characterised in that the encapsulation knot
Structure also includes the second antenna for being located at plastic packaging layer lower surface, wherein, second antenna passes through metal connecting structure and institute
State 3D and stack antenna electrical connection.
5. the fan-out package structure according to claim 1 that antenna is stacked with 3D, it is characterised in that the 3D is stacked
Antenna is rectangle winding-type structure, surrounds the re-wiring layer.
6. the fan-out package structure according to claim 1 that antenna is stacked with 3D, it is characterised in that the soldered ball is convex
Block includes the metal column positioned at the re-wiring layer upper surface, and the soldered ball positioned at the metal column upper surface.
7. a kind of preparation method for the fan-out package structure that antenna is stacked with 3D, it is characterised in that the preparation method bag
Include：
1) carrier is provided, adhesive layer is formed on a surface of the carrier；
2) chip structure is formed on a surface of the adhesive layer, the chip structure includes bare chip and positioned at the bare chip
Contact pad that is upper and being electrically connected with the bare chip, wherein, surface where the contact pad is the upper of the chip structure
Surface, and the upper surface of the chip structure contacts with a surface of the adhesive layer；
3) plastic packaging layer, the plastic packaging layer cladding chip structure are formed on the surface of adhesive layer one；
4) carrier and the adhesive layer are removed, to expose the upper surface of the chip structure；
5) re-wiring layer is formed in plastic packaging layer upper surface and chip structure upper surface, while outside the re-wiring layer
3D, which is formed, on the plastic packaging layer of side stacks antenna, wherein, the re-wiring layer is electrically connected with the contact pad, and the 3D is stacked
Antenna is electrically connected by the re-wiring layer with the chip structure；
6) soldered ball projection is formed on the re-wiring layer, the soldered ball projection is electrically connected with the re-wiring layer.
8. the preparation method of the fan-out package structure according to claim 7 that antenna is stacked with 3D, it is characterised in that
5) method of the re-wiring layer is formed in be included：It is alternatively formed absolutely in plastic packaging layer upper surface and chip structure upper surface
First laminated construction of edge layer and metal level, the top layer of first laminated construction is metal level, and first laminated construction
First layer metal layer be electrically connected with the contact pad, adjacent two layers metal level passes through the metal through respective insulation layers
Plug is electrically connected, wherein, the alternate number of times is not less than 2 times.
9. the preparation method of the fan-out package structure according to claim 7 that antenna is stacked with 3D, it is characterised in that
5) method of the 3D stackings antenna is formed in be included：While forming the re-wiring layer, outside the re-wiring layer
The plastic packaging layer upper surface of side is alternatively formed the second laminated construction of insulating barrier and metal level, and the top layer of second laminated construction is
Metal level, and adjacent two layers metal level is electrically connected by the metal plug through respective insulation layers, wherein, it is described alternate
Number of times is not less than 2 times.
10. the preparation method of the fan-out package structure according to claim 7 that antenna is stacked with 3D, its feature exists
In 5) in also include prepare the second antenna the step of, the step includes：
A) photoetching is carried out to the lower surface of plastic packaging layer, the first opening that the 3D stacks antenna is exposed to be formed；
B) formed in the described first opening and stack the metal connecting structure that antenna is electrically connected with the 3D；
C) the second antenna electrically connected in plastic packaging layer lower surface formation with the metal connecting structure.
11. the preparation method of the fan-out package structure according to claim 7 that antenna is stacked with 3D, its feature exists
In 3) it is middle using compressing and forming process, transfer shaping technology, hydraulic seal moulding process, vacuum lamination process or spin coating proceeding
Form the plastic packaging layer.
12. the preparation method of the fan-out package structure according to claim 7 that antenna is stacked with 3D, its feature exists
In 6) in formed soldered ball projection the step of include first the re-wiring layer upper surface formed metal column, then in the gold
Belong to post upper surface and form soldered ball.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710476280.7A CN107146785A (en) | 2017-06-21 | 2017-06-21 | Fan-out package structure of antenna and preparation method thereof is stacked with 3D |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710476280.7A CN107146785A (en) | 2017-06-21 | 2017-06-21 | Fan-out package structure of antenna and preparation method thereof is stacked with 3D |
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| CN107146785A true CN107146785A (en) | 2017-09-08 |
Family
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|---|---|---|---|
| CN201710476280.7A Pending CN107146785A (en) | 2017-06-21 | 2017-06-21 | Fan-out package structure of antenna and preparation method thereof is stacked with 3D |
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