CN107146668A - A kind of surface is installed by ZnO varistor and preparation method thereof - Google Patents
A kind of surface is installed by ZnO varistor and preparation method thereof Download PDFInfo
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- CN107146668A CN107146668A CN201710358346.2A CN201710358346A CN107146668A CN 107146668 A CN107146668 A CN 107146668A CN 201710358346 A CN201710358346 A CN 201710358346A CN 107146668 A CN107146668 A CN 107146668A
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- zno
- silver electrode
- zno varistor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
- H01C7/12—Overvoltage protection resistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C1/00—Details
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C1/00—Details
- H01C1/14—Terminals or tapping points or electrodes specially adapted for resistors; Arrangements of terminals or tapping points or electrodes on resistors
- H01C1/142—Terminals or tapping points or electrodes specially adapted for resistors; Arrangements of terminals or tapping points or electrodes on resistors the terminals or tapping points being coated on the resistive element
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C1/00—Details
- H01C1/14—Terminals or tapping points or electrodes specially adapted for resistors; Arrangements of terminals or tapping points or electrodes on resistors
- H01C1/144—Terminals or tapping points or electrodes specially adapted for resistors; Arrangements of terminals or tapping points or electrodes on resistors the terminals or tapping points being welded or soldered
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/28—Apparatus or processes specially adapted for manufacturing resistors adapted for applying terminals
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Thermistors And Varistors (AREA)
Abstract
ZnO varistor and preparation method thereof is installed the invention discloses a kind of surface, in ZnO voltage-sensitive ceramic piece two-face printing silver electrode pastes, sintering forms silver electrode, and obtaining two sides there are the pressure-sensitive silver strips of the ZnO of silver electrode；On two sides, the edge of silver electrode prepares one layer of annular insulating material, and the ZnO varistor piece of covering insulating material is made；Make the metal electrode film of the flat of bottom with a depression position and positioned at depression position both sides；In the central impression solder(ing) paste of the one side silver electrode of the ZnO varistor piece of covering insulating material, by the center alignment solder(ing) paste printed patterns center of metal electrode film depression position, heating makes solder(ing) paste melt to form soldering-tin layer, and metal electrode film is welded together by soldering-tin layer with ZnO varistor piece.This method is different from the SMD piezo-resistance manufacture method of existing laminated process, using individual layer voltage-sensitive ceramic piece, and the SMD piezoresistor uptake and cumulate of manufacture is big, and manufacturing cost is low.
Description
Technical field
The present invention relates to zno varistor and its manufacture method, more particularly to a kind of patch of suitable surface mounting technology
Chip ZnO varistor and its manufacture method.
Background technology
Zno varistor has been largely used to that abnormal overvoltage, protection electric power electricity are absorbed or suppressed in power electronic circuits
Sub- equipment exempts from destruction.
As electronic product is to miniaturization, low cost, high-performance, highly reliable development, surface mounting technique (SMT--
Surface Mount Technology) popularized rapidly in electronics product manufacturing industry.ZnO varistor is that electronic product is indispensable
Element, but the chip rate of ZnO varistor is very low at present, existing SMD piezo-resistance uses similar multi-layer ceramic capacitance
Device (MLCC) laminated process technology is manufactured, and the advantage of this technology is the piezo-resistance for manufacturing low pressure sensitive voltage.
ZnO varistor is more to be used for high voltage loop, and such as 220VAC and 110VAC power frequency supplies loop is generally adopted
With pressure sensitive voltage lightning protection overvoltage protection is carried out for 390~680V and 200~270V piezo-resistance.
Due to mesohigh ZnO varistor use pressure-sensitive ceramic material breakdown voltage gradient between 100~300V/
Mm, if using laminated process manufacture high voltage piezo-resistance, each effective layer thickness degree more than 0.5mm, even more than 1mm,
Effective layer thickness degree is bigger, and every layer of effective area just corresponding diminution in sandwich construction, stock utilization is low, causes unit volume to absorb
Energy density is reduced.
For the piezoresistor of high voltage appearance scope, common individual layer piezo-resistance is than multiple-layered patches prepared by laminated process
Formula piezo-resistance has electrical property advantage, but existing individual layer piezo-resistance generally uses welding lead, epoxy resin enclosed work
Skill, the piezoresistor of manufacture needs plug-in unit installation on circuit boards.
The content of the invention
In order to solve the problems of prior art, the present invention provides a kind of surface and installs ZnO varistor preparation side
Method, this method is different from the SMD piezo-resistance manufacture method of existing laminated process, using individual layer voltage-sensitive ceramic piece, the patch of manufacture
Slice type piezoresistor uptake and cumulate is big, and manufacturing cost is low.
The present invention also provides a kind of surface and installs ZnO varistor, using individual layer voltage-sensitive ceramic piece, uptake and cumulate
Greatly, available for high voltage appearance loop, production cost is low.
ZnO varistor preparation method is installed on surface of the present invention, is comprised the following steps：
S1, making ZnO voltage-sensitive ceramic pieces；
S2, in ZnO voltage-sensitive ceramic piece two-face printing silver electrode pastes, be then sintered to form silver electrode, obtain two sides
There are the pressure-sensitive silver strips of ZnO of silver electrode；
S3, the pressure-sensitive silver strips of ZnO two sides silver electrode edge prepare one layer of insulating materials, covering insulating material is made
ZnO varistor piece；
S4, making metal electrode film, metal electrode film have a depression position and the flat of bottom positioned at depression position both sides, recessed
The bottom surface and silver electrode for falling into position are welded；
S5, covering insulating material ZnO varistor piece one side silver electrode central impression solder(ing) paste, by metal electricity
The center of pole piece depression position is directed at the center of solder(ing) paste printed patterns, and heating makes solder(ing) paste melt to form soldering-tin layer, metal
Electrode slice is welded together by soldering-tin layer with ZnO varistor piece.
Preferably, when step S3 prepares insulating materials using inorganic glass materials, in the two sides silver electrode of the pressure-sensitive silver strips of ZnO
Edge prints unorganic glass slurry, after drying, sintered glass material, obtains the ZnO varistor piece of covering inorganic glass materials；
The sintering temperature of inorganic glass materials is at least lower 20 degree than the sintering temperature of silver electrode in step S2.
Preferably, when step S3 prepares insulating materials using high-molecular organic material, in the two sides silver electricity of the pressure-sensitive silver strips of ZnO
Pole edge solidifies after printing organic polymeric ink, clipsheet through ultraviolet light, then prints the second face and solidifies again through ultraviolet light,
Obtain the ZnO varistor piece of covering high-molecular organic material.
Surface of the present invention is installed by ZnO varistor, including individual layer voltage-sensitive ceramic piece, the silver for being printed on voltage-sensitive ceramic piece two sides
Electrode, the annular insulating material and metal electrode film for being printed on silver electrode edge；The metal electrode film has a depression position
With the flat of bottom positioned at depression position both sides, bottom surface and the silver electrode of the position that is recessed are welded, and the flat of bottom for the position both sides that are recessed is equivalent,
Separately or cooperatively as a pole welding ends of ZnO varistor；Inside and outside the width covering silver electrode edge line of annular insulating material
Respectively it is no less than 0.5mm.The Section of Outer Ring Line maximum of annular insulating material can reach the edge of voltage-sensitive ceramic piece.
If not using organic material to encapsulate after ZnO varistor piece prepared by prior art, welding lead, it is applied
During pulse current, because silver electrode edge electric field strength is more than inside, and the aerial semiconduction ZnO ceramic surfaces of exposure
Easily ionized under high electric field, therefore when bearing heavy current pulse, arcing can occur for ZnO varistor piece edge and side
Flashover.Using the inventive method, the insulating materials that one layer of silver electrode edges cover is combined closely so that when bearing pulse
Silver electrode edge and air exclusion that electric-field intensity is more concentrated, silver electrode edge to the easy semiconduction for occurring surface ionization
ZnO ceramic surfaces at least 0.5mm distance, the ZnO ceramic surfaces electric breakdown strength ratio covered with insulating materials is exposed to sky
ZnO ceramic surface electric breakdown strengths in gas are much bigger.
Therefore, the ZnO varistor piece made using the invention described above method manufactures zno varistor, even if not adopting
Encapsulated with organic material, pulse current or pulse voltage, ZnO varistor piece of the present invention are applied to manufactured piezoresistor
Edge and side will not also occur arcing or flashover, and after multiple pulses, be attached to ZnO varistor piece edge
Insulative capping material is still tightly combined with voltage-sensitive ceramic piece.Using the technology of the present invention manufacture ZnO varistor can so as not to encapsulating,
Both cost of goods manufactured can be reduced, small product size can be reduced again.Certainly, also may be used using the technology of the present invention manufacture ZnO varistor
To use resin-encapsulate, after product bears multiple pulses, encapsulating material bulk expansion causes encapsulated layer and ZnO varistor piece
Between form gap, and the annular insulative capping material prepared using the present invention is contacted closely with ceramic body and silver electrode face, no
Easy peeling off phenomenon, can avoid occurring resistor disc edge arcing flashover, so as to improve product reliability.
In addition, SMD zno varistor of the invention is applied to surface mounting technique (SMT--Surface Mount
Technology), symmetrical structure design facilitates chip mounter to draw, position and placed.
Brief description of the drawings
Fig. 1 is a kind of structural representation of embodiment of zno varistor of the present invention；
Fig. 2 is Fig. 1 A-A cut away views；
Fig. 3 is the structural representation of another embodiment of zno varistor of the present invention；
Fig. 4 is Fig. 3 B-B cut away views.
Embodiment
The present invention is more specifically described below by embodiment and Figure of description, but the embodiment party of the present invention
Formula not limited to this.
Referring to Fig. 1,2, ZnO varistor is installed on surface of the present invention, including individual layer voltage-sensitive ceramic piece 1, is printed on pressure-sensitive pottery
The silver electrode 2 on the two sides of ceramics 1, the insulative capping material 3 and metal electrode film 4 for being printed on the edge of silver electrode 2, the metal electricity
Pole piece 4 is welded by soldering-tin layer 5 with silver electrode 2.
Wherein, metal electrode film 4 is stamping by a sheet metal, with a depression position and positioned at the flat of depression position both sides
Part, the bottom surface of depression position is welded with silver electrode 2, and side and the whole voltage-sensitive ceramic piece 1 of the position that is recessed have certain space；Two
Flat of bottom is equivalent, can be separately or cooperatively as a pole welding ends of ZnO varistor of the present invention.And voltage-sensitive ceramic piece 1 can be with
For disc, or square shape sheet, the piezo-resistor structure of square shape sheet is as shown in Figure 3,4.Insulative capping material 3 can use nothing
Machine glass material or high-molecular organic material.
In the optimum embodiment of ZnO varistor piece of the present invention, no matter voltage-sensitive ceramic piece 1 is disc or square piece
Shape, is printed on marginal existence a certain distance with voltage-sensitive ceramic piece 1 of edge of the silver electrode 2 on its two sides, i.e. silver electrode
The area that area is less than voltage-sensitive ceramic piece is printed, there is space between the edge of silver electrode and the edge of voltage-sensitive ceramic piece.Insulation
Material 3 is printed on silver electrode edge, is extended inwardly in silver electrode, extends out to silver electrode edge and voltage-sensitive ceramic piece side
Space between edge.0.5mm is respectively no less than inside and outside the width covering silver electrode edge line of insulating materials 3, that is, is covered in silver electrode
On width be no less than 0.5mm, the width being covered on voltage-sensitive ceramic piece is quite a few in 0.5mm, and outer shroud maximum can reach ZnO pressures
The edge of quick potsherd, i.e. outer shroud maximum can cover the complete of the space between foregoing silver electrode edge and voltage-sensitive ceramic piece edge
Portion.
The preparation method of piezo-resistance of the present invention is described in detail in citing below.
Embodiment 1
In the present embodiment, the profile of the pressure-sensitive silver strips of ZnO uses disc, and insulative capping material uses unorganic glass, system
Preparation Method specifically includes following steps：
S11, disc ZnO voltage-sensitive ceramics piece 1 made using prior art, a diameter of 10mm, thickness is 2.4mm.
S12, using silk-screen printing technique in the ZnO voltage-sensitive ceramic piece two-face printing silver electrode pastes of above-mentioned making, two sides
Printed patterns are all to dry after diameter 7.5mm circle, clipsheet, and the second face of printing is dried again, and baking temperature is 150 DEG C；
Two sides is all printed after silver electrode paste, and it is put into maximum temperature in net belt type continuous tunnel furnace sintering silver electrode, net belt type continuous tunnel furnace
Optional 580 DEG C, being derived from two sides has the pressure-sensitive silver strips of the ZnO of silver electrode 2.
S13, the edge of the two sides silver electrode 2 printing unorganic glass slurry in the pressure-sensitive silver strips of the ZnO, printed patterns are annulus
Dried after shape, internal radius 6.0mm, annulus external diameter 9.0mm, clipsheet, the second face of printing is dried again, and baking temperature is 150
℃；Two sides all prints ring glass slurry, dry after, it is put into net belt type continuous tunnel furnace sintered glass insulative capping material, net
Optional 530 DEG C of maximum temperature in belt continuous tunnel furnace, are derived from covering the ZnO varistor piece of annular insulating material 3.
When printing unorganic glass slurry, ring glass insulative capping material should be made to cover the silver electrode of the pressure-sensitive silver strips of ZnO
Edge, and ring glass insulative capping material width at least ensure covering silver electrode edge line inside and outside respectively be no less than 0.5mm；
Ring glass insulative capping material can select area maximum, and its outer shroud can reach the edge of voltage-sensitive ceramic piece 1.
This step makes annular insulative capping material using inorganic glass materials can use silk-screen printing technique；When inorganic glass
When glass slurry circularizes insulative capping material through high temperature sintering preparation, using the sintering temperature of glass material should burn than silver electrode
Junction temperature is at least low 20 degree, to prevent silver electrode spreads with inorganic glass materials from dissolving each other.
S14, making metal electrode film 4.Metal electrode film 4 need to have solderability, can be stamping using metal copper sheet,
Fig. 1 can also be shown in using the stamping rear progress solderability processing of other metal materials, the profile of metal electrode film 4.
S15, the central impression solder(ing) paste of one side silver electrode 2 in the ZnO varistor piece for covering annular insulating material 3, weldering
The printed patterns of tin cream are diameter 5.5mm circle, and the concave surface center of metal electrode film 4 is aligned into printed tin cream pattern center position
Put, heating makes solder(ing) paste melt to form soldering-tin layer 5, metal electrode film 4 is welded on one by soldering-tin layer 5 and ZnO varistor piece
Rise, the SMD zno varistor available for surface mounting technique is so far made.
The two ends flat of bottom of metal electrode film 4 of ZnO varistor of the present invention is equivalent, can be separately or cooperatively as the present invention
One pole welding ends of ZnO varistor, the another side of the ZnO varistor without welding metal electrode slice is used as ZnO of the present invention
Another pole welding ends of piezo-resistance.
Prepare after piezo-resistance, test power dissipation characteristics in leakage current region：With thimble clamping fixture test SMD ZnO pressures of the invention
Pressure-sensitive three parameter of sensitive resistor：Pressure sensitive voltage, leakage current, nonlinear factor.
SMD zno varistor of the invention is welded on correspondingly-sized circuit pads, correspondence welding two is drawn
Going out wire is used for pulse test.Using composite wave pulsing device, (open circuit voltage wave is 1.2/50 μ s waveform, short circuit current wave
For 8/20 μ s waveforms, source impedance is 2 ohm) test SMD zno varistor sample pulse behaviors of the invention, setting open circuit
Voltage crest value/short circuit current flow crest value is 4kV/2kA, and pulse applies number of times and is set as 25 times, the time between two subpulses
At intervals of 60 seconds.After the experiment of 25 subpulses, the SMD zno varistor sample appearance of the present embodiment is intact, tests arteries and veins
Pressure-sensitive three parameter after punching experiment, with being contrasted before pulse testing, pressure sensitive voltage rate of change is within ± 5%.
Embodiment 2
The present embodiment makes covering annular insulating material 3 using high-molecular organic material, specific to solidify ring using ultraviolet light
Oxypropylene acid resin, using silk screen print method, printed patterns are annular, internal radius 6.0mm, annulus external diameter 9.0mm, printing
Simultaneously solidify 5 minutes through ultraviolet light afterwards, the second face of printing solidifies 5 minutes through ultraviolet light again, is derived from covering annular insulation material
The ZnO varistor piece of material 3.
Other making steps of the present embodiment and method of testing are same as Example 1.
After the experiment of 25 subpulses, the SMD zno varistor sample appearance of the present embodiment is intact, test pulse examination
Rear pressure-sensitive three parameter is tested, with being contrasted before pulse testing, pressure sensitive voltage rate of change is within ± 5%.
Embodiment 3
The pressure-sensitive silver strips of ZnO that the present embodiment makes are square shape sheet, and size is 9.0*9.0*2.0mm, the chi of square silver electrode 2
Very little is 7.0*7.0mm.
The present embodiment makes covering annular insulating material 3 using inorganic glass materials, and glass paste printed patterns are Fang Huan
Shape, interior ring size is 6.0*6.0mm, and outer ring size is 8.5*8.5mm.
Other making steps of the present embodiment and method of testing are same as Example 1.
After the experiment of 25 subpulses, the SMD zno varistor sample appearance of the present embodiment is intact, test pulse examination
Rear pressure-sensitive three parameter is tested, with being contrasted before pulse testing, pressure sensitive voltage changes within ± 5%.
Above-described embodiment is preferably embodiment, but embodiments of the present invention are not by above-described embodiment of the invention
Limitation, other any Spirit Essences without departing from the present invention and the change made under principle, modification, replacement, combine, simplification,
Equivalent substitute mode is should be, is included within protection scope of the present invention.
Claims (10)
1. ZnO varistor preparation method is installed on a kind of surface, it is characterised in that comprised the following steps：
S1, making ZnO voltage-sensitive ceramic pieces；
S2, in ZnO voltage-sensitive ceramic piece two-face printing silver electrode pastes, be then sintered to form silver electrode, obtain two sides have silver
The pressure-sensitive silver strips of ZnO of electrode；
S3, the pressure-sensitive silver strips of ZnO two sides silver electrode edge prepare one layer of insulating materials, the ZnO of covering insulating material is made
Piezoresistive wafer；
S4, making metal electrode film, metal electrode film have a depression position and the flat of bottom positioned at depression position both sides, and be recessed position
Bottom surface and silver electrode weld；
S5, covering insulating material ZnO varistor piece one side silver electrode central impression solder(ing) paste, by metal electrode film
The center of depression position is directed at the center of solder(ing) paste printed patterns, and heating makes solder(ing) paste melt to form soldering-tin layer, metal electrode
Piece is welded together by soldering-tin layer with ZnO varistor piece.
2. ZnO varistor preparation method is installed on surface according to claim 1, it is characterised in that in step S3, insulation
0.5mm is respectively no less than inside and outside the width covering silver electrode edge line of material.
3. ZnO varistor preparation method is installed on surface according to claim 1, it is characterised in that exhausted in step S3
Edge material is inorganic glass materials or high-molecular organic material.
4. ZnO varistor preparation method is installed on surface according to claim 3, it is characterised in that step S3 uses nothing
When machine glass material prepares insulating materials, unorganic glass slurry is printed at the two sides silver electrode edge of the pressure-sensitive silver strips of ZnO, is dried
Afterwards, sintered glass material, obtains the ZnO varistor piece of covering inorganic glass materials；The sintering temperature ratio of inorganic glass materials
The sintering temperature of silver electrode is at least low 20 degree in step S2.
5. ZnO varistor preparation method is installed on surface according to claim 3, it is characterised in that step S3, which is used, to be had
When machine high polymer material prepares insulating materials, organic polymeric ink, print are printed at the two sides silver electrode edge of the pressure-sensitive silver strips of ZnO
Solidify after brush one side through ultraviolet light, then print the second face and solidify again through ultraviolet light, obtain the ZnO of covering high-molecular organic material
Piezoresistive wafer.
6. ZnO varistor preparation method is installed on surface according to claim 1, it is characterised in that the insulating materials
For annular insulating material, its outer shroud reaches the edge of voltage-sensitive ceramic piece.
7. ZnO varistor preparation method is installed on surface according to claim 1, it is characterised in that the metal electrode
Piece is stamped and formed out using metal copper sheet, or using progress solderability processing after metal material punch forming.
8. ZnO varistor is installed on a kind of surface, it is characterised in that including individual layer voltage-sensitive ceramic piece, be printed on voltage-sensitive ceramic piece
The silver electrode on two sides, the annular insulating material and metal electrode film for being printed on silver electrode edge；The metal electrode film has
One depression position and the flat of bottom positioned at depression position both sides, bottom surface and the silver electrode of the position that is recessed are welded, depression position both sides it is flat
Part is equivalent, separately or cooperatively as a pole welding ends of ZnO varistor；The width covering silver electrode side of annular insulating material
0.5mm is respectively no less than inside and outside edge line.
9. ZnO varistor is installed on surface according to claim 8, it is characterised in that the insulating materials is inorganic glass
Glass material or high-molecular organic material.
10. ZnO varistor is installed on surface according to claim 8, it is characterised in that it is pressure-sensitive that ZnO is installed on the surface
Resistance also includes weld layer, and metal electrode film is welded by weld layer and silver electrode；The outer shroud of annular insulating material reaches pressure-sensitive
The edge of potsherd.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201710358346.2A CN107146668A (en) | 2017-05-19 | 2017-05-19 | A kind of surface is installed by ZnO varistor and preparation method thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201710358346.2A CN107146668A (en) | 2017-05-19 | 2017-05-19 | A kind of surface is installed by ZnO varistor and preparation method thereof |
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| CN107146668A true CN107146668A (en) | 2017-09-08 |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08115804A (en) * | 1994-10-14 | 1996-05-07 | Murata Mfg Co Ltd | Surface-mounted-type ceramic electronic component and its manufacture |
| JP3149095U (en) * | 2008-12-25 | 2009-03-12 | 岡谷電機産業株式会社 | Barista |
| CN102569237A (en) * | 2010-12-14 | 2012-07-11 | 万国半导体股份有限公司 | Semiconductor chip package and assembly method thereof |
| CN105448871A (en) * | 2014-08-18 | 2016-03-30 | 万国半导体股份有限公司 | Power semiconductor device and preparation method |
-
2017
- 2017-05-19 CN CN201710358346.2A patent/CN107146668A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08115804A (en) * | 1994-10-14 | 1996-05-07 | Murata Mfg Co Ltd | Surface-mounted-type ceramic electronic component and its manufacture |
| JP3149095U (en) * | 2008-12-25 | 2009-03-12 | 岡谷電機産業株式会社 | Barista |
| CN102569237A (en) * | 2010-12-14 | 2012-07-11 | 万国半导体股份有限公司 | Semiconductor chip package and assembly method thereof |
| CN105448871A (en) * | 2014-08-18 | 2016-03-30 | 万国半导体股份有限公司 | Power semiconductor device and preparation method |
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Application publication date: 20170908 |