CN207038272U - A kind of SMD ZnO varistor - Google Patents
A kind of SMD ZnO varistor Download PDFInfo
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- CN207038272U CN207038272U CN201720562712.1U CN201720562712U CN207038272U CN 207038272 U CN207038272 U CN 207038272U CN 201720562712 U CN201720562712 U CN 201720562712U CN 207038272 U CN207038272 U CN 207038272U
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- smd
- silver electrode
- zno varistor
- voltage
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Abstract
The utility model discloses a kind of SMD ZnO varistor, including individual layer voltage-sensitive ceramic piece, the annular insulating material and metal electrode film that are printed on the silver electrode on voltage-sensitive ceramic piece two sides, are printed on silver electrode edge；The side that the metal electrode film includes solder side, extended vertically from solder side one end, and the exit of lateral end is arranged on, solder side welds with silver electrode；0.5mm is respectively no less than inside and outside the width covering silver electrode edge line of annular insulating material.The utility model is different from the SMD piezo-resistance of existing laminated process, and using individual layer voltage-sensitive ceramic piece, the SMD piezoresistor uptake and cumulate of manufacture is big, and manufacturing cost is low.
Description
Technical field
It the utility model is related to zno varistor, the SMD ZnO pressures of more particularly to a kind of suitable surface mounting technology
Quick resistance.
Background technology
Zno varistor has been largely used to that abnormal overvoltage, protection electric power electricity are absorbed or suppressed in power electronic circuits
Sub- equipment exempts from destruction.
As electronic product is to miniaturization, low cost, high-performance, highly reliable development, surface mounting technique (SMT--
Surface Mount Technology) popularized rapidly in electronics product manufacturing industry.ZnO varistor is electronic product indispensability
Element, but the chip rate of ZnO varistor is very low at present, existing SMD piezo-resistance uses similar multi-layer ceramic capacitance
Device (MLCC) laminated process technology manufactures, and the advantage of this technology is the piezo-resistance for manufacturing low pressure sensitive voltage.
ZnO varistor is more used for high voltage loop, such as 220VAC and 110VAC power frequency supplies loop is generally adopted
Lightning protection overvoltage protection is carried out with the piezo-resistance that pressure sensitive voltage is 390~680V and 200~270V.
Due to mesohigh ZnO varistor use pressure-sensitive ceramic material breakdown voltage gradient between 100~300V/
Mm, if manufacturing high voltage piezo-resistance using laminated process, each effective layer thickness degree more than 0.5mm, even more than 1mm,
Effective layer thickness degree is bigger, and every layer of effective area is just corresponding in sandwich construction reduces, and stock utilization is low, causes unit volume to absorb
Energy density reduces.
For the piezoresistor of high voltage appearance scope, common individual layer piezo-resistance is than multiple-layered patches prepared by laminated process
Formula piezo-resistance has electrical property advantage, but existing individual layer piezo-resistance is generally using welding lead, epoxy resin enclosed work
Skill, the piezoresistor of manufacture need plug-in unit installation on circuit boards.
The content of the invention
In order to solve the problems of prior art, the utility model provides a kind of SMD ZnO varistor, uses
Individual layer voltage-sensitive ceramic piece, uptake and cumulate is big, low available for high voltage appearance loop, production cost.
The SMD ZnO varistor of the utility model, including individual layer voltage-sensitive ceramic piece, it is printed on voltage-sensitive ceramic piece two sides
Silver electrode, the annular insulating material and metal electrode film for being printed on silver electrode edge；The metal electrode film include solder side,
The side extended vertically from solder side one end, and the exit of lateral end is arranged on, solder side welds with silver electrode；
0.5mm is respectively no less than inside and outside the width covering silver electrode edge line of annular insulating material.The outer shroud maximum of annular insulating material can
To reach the edge of voltage-sensitive ceramic piece.
ZnO varistor piece prepared by prior art, if not using organic material to encapsulate after welding lead, it is applied
During pulse current, because silver electrode edge electric field strength is more than inside, and the aerial semiconduction ZnO ceramic surfaces of exposure
When easily being ionized under high electric field, therefore bearing heavy current pulse, arcing can occur for ZnO varistor piece edge and side
Flashover.One layer of insulating materials combined closely of the utility model silver electrode edges cover so that the electric field when bearing pulse
The silver electrode edge and air exclusion that intensity is more concentrated, silver electrode edge to the easy semiconduction ZnO potteries that surface ionization occurs
Porcelain surface at least 0.5mm distance, the ZnO ceramic surfaces electric breakdown strength covered with insulating materials are more aerial than exposure
ZnO ceramic surface electric breakdown strengths are much bigger.
Therefore, zno varistor is manufactured using above-mentioned the utility model ZnO varistor piece, even if not using organic
Material is encapsulated, and applies pulse current or pulse voltage to manufactured piezoresistor, the utility model ZnO varistor piece
Arcing or flashover will not also occur for edge and side, and after multiple pulses, be attached to the exhausted of ZnO varistor piece edge
Edge covering material is still tightly combined with voltage-sensitive ceramic piece.Using the utility model technology manufacture ZnO varistor can so as not to bag
Envelope, can both reduce cost of goods manufactured, can reduce small product size again.Certainly, the pressure-sensitive electricity of ZnO is manufactured using the utility model technology
Resistance can also use resin-encapsulate, and after product bears multiple pulses, encapsulating material bulk expansion causes encapsulated layer pressure-sensitive with ZnO
Gap is formed between resistor disc, and the annular insulative capping material for using the utility model to prepare connects with ceramic body and silver electrode face
Touch closely, be not susceptible to peeling, can avoid that resistor disc edge arcing flashover occurs, so as to improve product reliability.
Brief description of the drawings
Fig. 1 is a kind of structural representation of embodiment of the utility model zno varistor；
Fig. 2 is Fig. 1 A-A cut away views；
Fig. 3 is the structural representation of another embodiment of the utility model zno varistor；
Fig. 4 is Fig. 3 B-B cut away views.
Embodiment
The utility model is more specifically described below by embodiment, but embodiment of the present utility model is not
It is limited to this.
Referring to Fig. 1,2, the SMD ZnO varistor of the utility model, including individual layer voltage-sensitive ceramic piece 1, be printed on it is pressure-sensitive
The silver electrode 2 on the two sides of potsherd 1, the insulative capping material 3 and metal electrode film 4 for being printed on the edge of silver electrode 2, the metal
Electrode slice 4 is welded by soldering-tin layer 5 and silver electrode 2.
Wherein, metal electrode film 4 is made up of a sheet metal, including solder side, extends vertically from solder side one end
Side, and the exit of lateral end is arranged on, exit is another with the ZnO varistor piece of unwelded metal electrode film
Face is in same plane.The exit of metal electrode film 4 welds as a pole of the SMD zno varistor of the utility model
End, the pressure-sensitive electricity of the SMD ZnO of the utility model is used as without the another side center of the ZnO varistor piece of welding metal electrode slice
Hinder another pole welding ends of device.
And voltage-sensitive ceramic piece 1 can be disc, or square shape sheet, piezo-resistor structure such as Fig. 3 of square shape sheet, 4
It is shown.Insulative capping material 3 can use inorganic glass materials or high-molecular organic material.
In the optimum embodiment of the utility model ZnO varistor piece, no matter voltage-sensitive ceramic piece 1 is disc or side
Piece shape, it is printed on marginal existence a certain distance with voltage-sensitive ceramic piece 1 of edge of the silver electrode 2 on its two sides, i.e. silver electrode
Printing area be less than voltage-sensitive ceramic piece area, space be present between the edge of silver electrode and the edge of voltage-sensitive ceramic piece.Absolutely
Edge material 3 is printed on silver electrode edge, is extended inwardly in silver electrode, extends out to silver electrode edge and voltage-sensitive ceramic piece
Space between edge.0.5mm is respectively no less than inside and outside the width covering silver electrode edge line of insulating materials 3, that is, is covered in silver-colored electricity
Width on extremely is no less than 0.5mm, and the width being covered on voltage-sensitive ceramic piece is quite a few to can reach ZnO in 0.5mm, outer shroud maximum
The edge of voltage-sensitive ceramic piece, i.e. outer shroud maximum can cover the complete of the space between foregoing silver electrode edge and voltage-sensitive ceramic piece edge
Portion.
The preparation method of the utility model piezo-resistance is described in detail in citing below.
Embodiment 1
In the present embodiment, the profile of the pressure-sensitive silver strips of ZnO uses disc, and insulative capping material uses unorganic glass, system
Preparation Method specifically comprises the following steps：
S11, disc ZnO voltage-sensitive ceramics piece 1, a diameter of 7mm, thickness 2.4mm made using prior art.
S12, using silk-screen printing technique on the ZnO voltage-sensitive ceramic piece two-face printing silver electrode pastes of above-mentioned making, two sides
Printed patterns are all diameter 5.5mm circle, are dried after clipsheet, and the second face of printing is dried again, and baking temperature is 150 DEG C；
After silver electrode paste is all printed in two sides, it is put into net belt type continuous tunnel furnace sintering silver electrode, maximum temperature in net belt type continuous tunnel furnace
Optional 580 DEG C, being derived from two sides has the pressure-sensitive silver strips of the ZnO of silver electrode 2.
S13, the pressure-sensitive silver strips of the ZnO the edge of two sides silver electrode 2 print unorganic glass slurry, printed patterns are annulus
Shape, internal radius 4.0mm, annulus external diameter 6.5mm, dry after clipsheet, the second face of printing is dried again, baking temperature 150
℃；Two sides all prints ring glass slurry, dry after, it is put into net belt type continuous tunnel furnace sintered glass insulative capping material, net
Optional 530 DEG C of maximum temperature in belt continuous tunnel furnace, it is derived from covering the ZnO varistor piece of annular insulating material 3.
When printing unorganic glass slurry, the silver electrode of the ring glass insulative capping material covering pressure-sensitive silver strips of ZnO should be made
Edge, and the width of ring glass insulative capping material at least ensures respectively to be no less than 0.5mm inside and outside covering silver electrode edge line,
Its outer shroud of the annular insulating material of area maximum can reach the edge of voltage-sensitive ceramic piece.
This step makes annular insulative capping material using inorganic glass materials can use silk-screen printing technique；When inorganic glass
When glass slurry circularizes insulative capping material through high temperature sintering preparation, using the sintering temperature of glass material should burn than silver electrode
Junction temperature is at least low 20 degree, to prevent silver electrode spreads with inorganic glass materials from dissolving each other.
S14, metal electrode film 4 is made, metal electrode film 4 includes solder side, extended vertically from solder side one end
Side, and the exit of lateral end is arranged on, exit is another with the ZnO varistor piece of unwelded metal electrode film
Face is in same plane.Metal electrode film 4 need to have solderability, and metal copper sheet can be used stamping, can also use it
Solderability processing is carried out after his metal material is stamping, the profile of metal electrode film 4 is shown in Fig. 1.
S15, the central impression solder(ing) paste of one side silver electrode 2 in the ZnO varistor piece for covering annular insulating material 3, weldering
The printed patterns of tin cream are diameter 4.0mm circle, and metal electrode film 4 is correspondingly placed on ZnO varistor piece, are heated
Solder(ing) paste is set to melt to form soldering-tin layer 5, metal electrode film 4 is welded together by soldering-tin layer 5 and ZnO varistor piece, so far
SMD zno varistor is made.
A pole welding ends of the exit of metal electrode film 4 as the SMD zno varistor of the utility model, does not have
The another side center of the ZnO varistor piece of welding metal electrode slice is as the SMD zno varistor of the utility model
Another pole welding ends.
Test power dissipation characteristics in leakage current region：The pressure-sensitive of the SMD zno varistor of the utility model is tested with thimble clamping fixture
Three parameters：Pressure sensitive voltage, leakage current, nonlinear factor.
The SMD zno varistor of the utility model is welded on correspondingly-sized circuit pads, on circuit boards
Two extraction wires of corresponding welding are used for pulse test.
Using composite wave pulsing device, (for open circuit voltage wave for 1.2/50 μ s waveforms, short circuit current wave is 8/20 μ s ripples
Shape, source impedance are 2 ohm) the test SMD zno varistor sample pulse behaviors of the utility model, set open circuit voltage wave
Peak value/short circuit current crest value is 2kV/1kA, and pulse applies number and is set as that the time interval between two subpulses is 25 times
60 seconds.After the experiment of 25 subpulses, the SMD zno varistor sample appearance of the present embodiment is intact, test pulse experiment
Pressure-sensitive three parameter afterwards, with being contrasted before pulse testing, pressure sensitive voltage rate of change is within ± 5%.
Embodiment 2
The pressure-sensitive silver strips of ZnO that the present embodiment makes are disc, and covering annular insulation is made using high-molecular organic material
Material 3, specifically using UV radiation-curable epoxy acrylate resin, using silk screen print method, printed patterns are annular, in annulus
Footpath 4.0mm, annulus external diameter 6.5mm, solidify 5 minutes through ultraviolet light after clipsheet, the second face of printing solidifies 5 points through ultraviolet light again
Clock, it is derived from covering the ZnO varistor piece of annular insulating material 3.
Other making steps of the present embodiment and method of testing are same as Example 1.
After the experiment of 25 subpulses, the SMD zno varistor sample appearance of the present embodiment is intact, test pulse examination
Rear pressure-sensitive three parameter is tested, with being contrasted before pulse testing, pressure sensitive voltage rate of change is within ± 5%.
Embodiment 3
The pressure-sensitive silver strips of ZnO that the present embodiment makes are square shape sheet, size 6.5*6.5*2.0mm, the chi of square silver electrode 2
Very little is 5.2*5.2mm.
The present embodiment makes covering annular insulating material 3 using inorganic glass materials, and glass paste printed patterns are Fang Huan
Shape, interior ring size are 4.0*4.0mm, outer ring size 6.2*6.2mm.
Other making steps of the present embodiment and method of testing are same as Example 1.
After the experiment of 25 subpulses, the SMD zno varistor sample appearance of the present embodiment is intact, test pulse examination
Rear pressure-sensitive three parameter is tested, with being contrasted before pulse testing, pressure sensitive voltage rate of change is within ± 5%.
Above-described embodiment is the preferable embodiment of the utility model, but embodiment of the present utility model is not by above-mentioned
The limitation of embodiment, it is other it is any without departing from Spirit Essence of the present utility model with made under principle change, modify, replace
Generation, combination, simplify, should be equivalent substitute mode, be included within the scope of protection of the utility model.
Claims (4)
1. a kind of SMD ZnO varistor, it is characterised in that including individual layer voltage-sensitive ceramic piece, be printed on voltage-sensitive ceramic piece two
The silver electrode in face, the annular insulating material and metal electrode film for being printed on silver electrode edge；The metal electrode film includes weldering
Junction, the side extended vertically from solder side one end, and it is arranged on the exit of lateral end, solder side and silver electrode
Welding；0.5mm is respectively no less than inside and outside the width covering silver electrode edge line of annular insulating material.
2. SMD ZnO varistor according to claim 1, it is characterised in that the insulating materials is unorganic glass
Material or high-molecular organic material.
3. SMD ZnO varistor according to claim 1, it is characterised in that the SMD ZnO varistor is also
Including weld layer, metal electrode film is welded by weld layer and silver electrode.
4. SMD ZnO varistor according to claim 1, it is characterised in that the insulating materials insulate for annular
Material, outer shroud reach the edge of voltage-sensitive ceramic piece.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720562712.1U CN207038272U (en) | 2017-05-19 | 2017-05-19 | A kind of SMD ZnO varistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720562712.1U CN207038272U (en) | 2017-05-19 | 2017-05-19 | A kind of SMD ZnO varistor |
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| Publication Number | Publication Date |
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| CN207038272U true CN207038272U (en) | 2018-02-23 |
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| CN201720562712.1U Active CN207038272U (en) | 2017-05-19 | 2017-05-19 | A kind of SMD ZnO varistor |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107093506A (en) * | 2017-05-19 | 2017-08-25 | 华南理工大学 | A kind of SMD ZnO varistor and preparation method thereof |
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2017
- 2017-05-19 CN CN201720562712.1U patent/CN207038272U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107093506A (en) * | 2017-05-19 | 2017-08-25 | 华南理工大学 | A kind of SMD ZnO varistor and preparation method thereof |
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| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20210813 Address after: 361026 4th floor, block a, building 1, No. 18, Dingshan Middle Road, Dongfu street, Haicang District, Xiamen City, Fujian Province Patentee after: XIAMEN SANBAO YINGKE ELECTRONICS Co.,Ltd. Address before: 510640 No. five, 381 mountain road, Guangzhou, Guangdong, Tianhe District Patentee before: SOUTH CHINA University OF TECHNOLOGY |
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| TR01 | Transfer of patent right |