CN107146667A - A kind of high-energy tolerance ZnO varistor piece and preparation method thereof - Google Patents

A kind of high-energy tolerance ZnO varistor piece and preparation method thereof Download PDF

Info

Publication number
CN107146667A
CN107146667A CN201710357460.3A CN201710357460A CN107146667A CN 107146667 A CN107146667 A CN 107146667A CN 201710357460 A CN201710357460 A CN 201710357460A CN 107146667 A CN107146667 A CN 107146667A
Authority
CN
China
Prior art keywords
zno
silver electrode
zno varistor
sensitive
piece
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201710357460.3A
Other languages
Chinese (zh)
Inventor
卢振亚
刘兴悦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
South China University of Technology SCUT
Original Assignee
South China University of Technology SCUT
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by South China University of Technology SCUT filed Critical South China University of Technology SCUT
Priority to CN201710357460.3A priority Critical patent/CN107146667A/en
Publication of CN107146667A publication Critical patent/CN107146667A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01CRESISTORS
    • H01C7/00Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/10Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
    • H01C7/105Varistor cores
    • H01C7/108Metal oxide
    • H01C7/112ZnO type
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01CRESISTORS
    • H01C17/00Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/06Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base

Abstract

The present invention provides a kind of high-energy tolerance ZnO varistor piece and preparation method thereof, and ZnO voltage-sensitive ceramic pieces are made first;Then in the two-face printing silver electrode paste of ZnO voltage-sensitive ceramic pieces, then it is sintered to form silver electrode, obtaining two sides there are the pressure-sensitive silver strips of the ZnO of silver electrode;The edge of the last two sides silver electrode in the pressure-sensitive silver strips of ZnO prepares annular insulative capping material, and the ZnO varistor piece of covering annular insulating material is made;0.5mm is respectively no less than inside and outside the width covering silver electrode edge line of annular insulating material.Prepared ZnO varistor piece, regardless of whether being encapsulated using organic material, when bearing pulse current, arcing or flashover will not also occur for its edge and side, and reliability is high.

Description

A kind of high-energy tolerance ZnO varistor piece and preparation method thereof
Technical field
The present invention relates to zno varistor and its manufacture method, more particularly to one kind is exempted to encapsulate, is resistant to high impulse The ZnO varistor piece and its manufacture method of energy density.
Background technology
Zno varistor has been largely used to that abnormal overvoltage, protection electric power electricity are absorbed or suppressed in power electronic circuits Sub- equipment exempts from destruction.
Generally manufacturing the method for zno varistor is:ZnO voltage-sensitive ceramic pieces are manufactured, in ZnO voltage-sensitive ceramic piece two sides systems Standby metal electrode, obtains the ZnO varistor piece for possessing non-linear to voltage characteristic;Then in two gold of ZnO varistor piece Lead-out wire is welded on category electrode, zno varistor is made using epoxy resin enclosed ZnO varistor piece body.
Zno varistor is needed to bear pulse voltage or pulse current, and ZnO is manufactured using existing ZnO varistor piece If not using organic material to encapsulate during piezoresistor, ZnO pressure-sensitive electricity when pulse voltage or pulse current impact test is born Arcing or flashover can occur for resistance plate electrode edge and side.ZnO varistor piece is encapsulated using resinae organic encapsulants, Arcing or flashover can be prevented.But be due to zno varistor after multiple pulses are impacted, absorb electric energy be transformed into heat Can, acutely heating inside zno varistor, organic encapsulants expansion causes shape between encapsulated layer and ZnO varistor piece Into gap, when applying pulse shock experiment to the zno varistor again, arcing or flashover will occur for gap location, cause bag Sealing ftractures, come off, and even results in the overall fragmentation of zno varistor.
The content of the invention
In order to solve the problems of prior art, the present invention provides a kind of ZnO varistor piece of high-energy tolerance Preparation method, prepared ZnO varistor piece, even if not using organic material to encapsulate, when bearing pulse current, its edge Will not also occur arcing or flashover with side, reliability is high.
The present invention also provides a kind of high-energy tolerance ZnO varistor piece, even if not using organic material to encapsulate, its edge Will not also occur arcing or flashover with side, if ZnO varistor piece combination epoxy resin packaging technology of the present invention is prepared into Piezoresistor, its temperature is risen by multiple pulses electric current, though outer encapsulating epoxy resin and voltage-sensitive ceramic piece body it Between produce gap, also will not therefore cause piezoresistive wafer edge and side arcing or flashover, product reliability is high.
High-energy tolerance ZnO varistor piece preparation method of the present invention, comprises the following steps:
S1, making ZnO voltage-sensitive ceramic pieces;
S2, the two-face printing silver electrode paste in ZnO voltage-sensitive ceramic pieces, are then sintered to form silver electrode, obtain two There are the pressure-sensitive silver strips of the ZnO of silver electrode in face;
S3, the pressure-sensitive silver strips of ZnO two sides silver electrode edge prepare one layer of annular insulating material, covering insulation material is made The ZnO varistor piece of material;0.5mm is respectively no less than inside and outside the width covering silver electrode edge line of annular insulating material;It is annular exhausted Edge covering material outer shroud maximum can reach the edge of ZnO voltage-sensitive ceramic pieces.
Preferably, when step S3 prepares insulating materials using inorganic glass materials, in the two sides silver electrode of the pressure-sensitive silver strips of ZnO Edge prints unorganic glass slurry, after drying, sintered glass material, obtains the ZnO varistor piece of covering inorganic glass materials; The sintering temperature of inorganic glass materials is at least lower 20 degree than the sintering temperature of silver electrode in step S2.
Preferably, step S3 prepares insulating materials from heat reactive resin as high-molecular organic material, in the pressure-sensitive silver of ZnO The two sides silver electrode edge printing heat reactive resin of piece is simultaneously dried, and obtains the ZnO varistor piece of covering heat reactive resin.
Preferably, step S3 prepares insulating materials from light-cured resin as high-molecular organic material, in the pressure-sensitive silver of ZnO The two sides silver electrode edge printing light-cured resin of piece simultaneously solidifies through ultraviolet light, obtains the pressure-sensitive electricity of ZnO of covering light-cured resin Hinder piece.
High-energy tolerance ZnO varistor piece of the present invention, including individual layer voltage-sensitive ceramic piece, it is printed on voltage-sensitive ceramic piece two sides Silver electrode and insulating materials;The insulating materials is covered on the edge of one side silver electrode, and the width of insulating materials covers 0.5mm is respectively no less than inside and outside lid silver electrode edge line.
If not using organic material to encapsulate after ZnO varistor piece prepared by prior art, welding lead, it is applied During pulse current, because silver electrode edge electric field strength is more than inside, and the aerial semiconduction ZnO ceramic surfaces of exposure Easily ionized under high electric field, therefore when bearing heavy current pulse, arcing can occur for ZnO varistor piece edge and side Flashover.Using the inventive method, the insulating materials that one layer of silver electrode edges cover is combined closely so that when bearing pulse Silver electrode edge and air exclusion that electric-field intensity is more concentrated, silver electrode edge to the easy semiconduction for occurring surface ionization ZnO ceramic surfaces at least 0.5mm distance, the ZnO ceramic surfaces electric breakdown strength ratio covered with insulating materials is exposed to sky ZnO ceramic surface electric breakdown strengths in gas are much bigger.
Therefore, the ZnO varistor piece made using the invention described above method manufactures zno varistor, even if not adopting Encapsulated with organic material, pulse current or pulse voltage, ZnO varistor piece of the present invention are applied to manufactured piezoresistor Edge and side will not also occur arcing or flashover, and after multiple pulses, be attached to ZnO varistor piece edge Insulative capping material is still tightly combined with voltage-sensitive ceramic piece.Using the technology of the present invention manufacture ZnO varistor can so as not to encapsulating, Both cost of goods manufactured can be reduced, small product size can be reduced again.Certainly, also may be used using the technology of the present invention manufacture ZnO varistor To use resin-encapsulate, after product bears multiple pulses, encapsulating material bulk expansion causes encapsulated layer and ZnO varistor piece Between form gap, and the annular insulative capping material prepared using the present invention is contacted closely with ceramic body and silver electrode face, no Easy peeling off phenomenon, can avoid occurring resistor disc edge arcing flashover, so as to improve product reliability.
Brief description of the drawings
Fig. 1 is a kind of structural representation of embodiment of ZnO varistor piece of the present invention;
Fig. 2 is Fig. 1 A-A cut away views;
Fig. 3 is the structural representation of another embodiment of ZnO varistor piece of the present invention;
Fig. 4 is Fig. 3 B-B cut away views.
Embodiment
The present invention is more specifically described below by embodiment, but the implementation of the present invention is not limited to this.
Referring to Fig. 1,2, ZnO varistor piece of the present invention, including individual layer voltage-sensitive ceramic piece 1, it is printed on 1 liang of voltage-sensitive ceramic piece The silver electrode 2 in face and the insulative capping material 3 for being printed on the edge of silver electrode 2.Voltage-sensitive ceramic piece 1 can be disc, can also For square shape sheet, the piezo-resistor structure of square shape sheet is as shown in Figure 3,4.Insulative capping material 3 can using inorganic glass materials or High-molecular organic material.
In the optimum embodiment of ZnO varistor piece of the present invention, no matter voltage-sensitive ceramic piece 1 is disc or square piece Shape, is printed on marginal existence a certain distance with voltage-sensitive ceramic piece 1 of edge of the silver electrode 2 on its two sides, i.e. silver electrode The area that area is less than voltage-sensitive ceramic piece is printed, there is space between the edge of silver electrode and the edge of voltage-sensitive ceramic piece.Insulation Material 3 is printed on silver electrode edge, is extended inwardly in silver electrode, extends out to silver electrode edge and voltage-sensitive ceramic piece side Space between edge.0.5mm is respectively no less than inside and outside the width covering silver electrode edge line of insulating materials 3, that is, is covered in silver electrode On width be no less than 0.5mm, the width being covered on voltage-sensitive ceramic piece is quite a few in 0.5mm, and outer shroud maximum can reach ZnO pressures The edge of quick potsherd, i.e. outer shroud maximum can cover the complete of the space between foregoing silver electrode edge and voltage-sensitive ceramic piece edge Portion.
ZnO varistor piece of the present invention can without encapsulating, and directly from the two sides silver electrode 2 of voltage-sensitive ceramic piece 1 Lead is respectively welded, to be prepared into zno varistor, when ZnO varistor piece bears pulse current, edge and side are not Can occur arcing or flashover.ZnO varistor piece of the present invention can certainly be encapsulated, such as use epoxy resin enclosed work Skill is encapsulated to be prepared into zno varistor, after encapsulating, even if temperature rises by multiple pulses electric current, encapsulated layer and pressure Gap is produced between quick ceramic body, but arcing or flashover, reliability will not still occur for the edge and side of piezoresistive wafer It is very high.
In addition to the mode of lead directly is respectively welded from the silver electrode of two sides, it can also be welded in one side silver electrode Metal electrode film, the mode of welding lead draws two welding ends in another side silver electrode, to be prepared into ZnO varistor Device.How two connection ends (i.e. welding ends) of zno varistor are set, and are that citing is illustrated above, this area Technical staff can also be set using other modes.
The preparation method of piezoresistive wafer of the present invention is described in detail in citing below.
Embodiment 1~4
In the present embodiment, the profile of the pressure-sensitive silver strips of ZnO uses disc, and insulative capping material uses unorganic glass, system Preparation Method specifically includes following steps:
S11, disc ZnO voltage-sensitive ceramics piece 1 made using prior art, a diameter of 10mm, thickness is 2mm.
S12, making silver electrode 2, it is electric in the ZnO voltage-sensitive ceramic pieces two-face printing silver of above-mentioned making using silk-screen printing technique Pole slurry, two-face printing pattern is all diameter 7.5mm circle.Dried after clipsheet, the second face of printing is dried again, baking temperature Spend for 150 DEG C.
The above-mentioned ZnO voltage-sensitive ceramic pieces for being printed with silver electrode paste are put into mesh band type resistor furnace and sinter silver electrode, net The temperature of band resistance stove highest warm area is by T1 (actual temp that embodiment 1-4 is used is referring to table 1), and the guipure speed of service makes Product is kept for 5~10 minutes in T1 high-temperature regions, and the preparation of silver electrode 2 is completed after mesh band type resistor furnace is sintered, and obtains ZnO pressures Quick silver strip.
S13, annular insulative capping material 3 is prepared, specific method is:In the pressure-sensitive silver strip two-face printings of the ZnO of above-mentioned preparation Annular unorganic glass slurry, makes annular unorganic glass slurry printed patterns cover the edge of silver electrode 2, annular unorganic glass slurry Internal diameter be D1, external diameter is D2.Dried after clipsheet, then print the second face and dry again, baking temperature is 150 DEG C, then is put Enter and inorganic glass materials are sintered in mesh band type resistor furnace, the temperature of mesh band type resistor furnace highest warm area is T2, the guipure speed of service Product is set to be kept for 5~10 minutes in T2 high-temperature regions so that the silver electrode edge of the pressure-sensitive silver strips of ZnO adheres to one layer of annular insulation covering Material 3, that is, be made ZnO varistor piece of the present invention.
0.5mm, the maximum ring of area are respectively no less than inside and outside the width covering silver electrode edge line of annular insulative capping material 3 Its outer shroud of shape insulative capping material 3 can reach the edge of ZnO voltage-sensitive ceramic pieces.
Electric performance test is carried out to ZnO varistor piece of the present invention:Using tinned wird welding lead, solder joint is located at sample Not by glass material covering part in the middle of two silver electrodes 2;Three parameter (pressure sensitive voltages are tested using general varistor tester V1mA, voltage nonlinearity α, leakage current IL);Using composite wave pulsing device, (open circuit voltage wave is 1.2/50 μ s ripple Shape, short circuit current wave is 8/20 μ s waveforms, and source impedance is 2 ohm) test sample pulse behaviors, setting open-circuit voltage crest value/ Short circuit current flow crest value is:4kV/2kA, pulse applies number of times and is set as 25 times, and the time interval between two subpulses is 60 seconds, When sample, which is subjected to pulse number, occurs arcing or flashover less than 25 times, stops the sample pulse testing and record what is carried out Pulse testing number of times, when arcing or flashover do not occur for 25 experiments of completion, record surveys sample passes.
Table 1 lists electric performance test result, wherein control sample 1 be to the pressure-sensitive silver strips of ZnO of non-printed glass slurry (i.e. Do not make annular insulative capping material 3) direct welding lead;The sintering silver electrode temperature and sintered glass material of control sample 2 Temperature difference is less than 20 DEG C;During 3 printed glass slurry of control sample, although ring glass printed patterns covering silver electrode edge, Ring glass pattern is cylindrical to be less than 0.5mm with silver electrode Edge Distance;During 4 printed glass slurry of control sample, ring glass printing Although pattern covering silver electrode edge, annular inner circle is less than 0.5mm with silver electrode Edge Distance.
Pressure-sensitive three parameter testings result before and after the unlisted test specimen pulse test of table 1, correlation properties are decided by pressure-sensitive pottery Ceramic material body manufacturing technology, it is unrelated with ZnO varistor piece of the present invention and preparation method thereof.
Table 1
Embodiment 5
The present embodiment in addition to making annular insulative capping material 3 using high-molecular organic material, remaining preparation method with Embodiment 1 is identical.
The present embodiment selects heat reactive resin, makes annular insulative capping material 3, specifically uses two part heat cured tree Fat, using silk screen print method, printed patterns are annular, internal radius 6.0mm, annulus external diameter 9.0mm, are baked after clipsheet Dry, the second face of printing is dried again, and baking temperature is 150 DEG C, is placed into oven and is toasted at 150 DEG C 30 minutes, that is, completes annular The preparation of insulative capping material 3.
Method of testing is same as Example 1, after welding lead, and the present embodiment sample bears outer after 25 4kV/2kA pulses Shape is intact, does not occur edge or side arcing flashover.
Embodiment 6
The present embodiment in addition to making annular insulative capping material 3 using high-molecular organic material, remaining preparation method with Embodiment 1 is identical.
The present embodiment selects light-cured resin, makes annular insulative capping material 3, specific to use UV cured epoxy acrylic acid Resin, using silk screen print method, printed patterns are annular, internal radius 6.0mm, annulus external diameter 9.0mm, are passed through after clipsheet Ultraviolet light solidifies 5 minutes, then prints the second face and solidifies 5 minutes through ultraviolet light again, is derived from covering annular insulating material 3 ZnO varistor piece.
Method of testing is same as Example 1, after welding lead, and the present embodiment sample bears outer after 25 4kV/2kA pulses Shape is intact, does not occur edge or side arcing flashover.
Embodiment 7
The present embodiment except ZnO voltage-sensitive ceramics piece 1 is made into square shape sheet, and silver electrode 2 size, annular insulation covering Outside the size of material 3, remaining preparation method is same as Example 1.
ZnO voltage-sensitive ceramics piece 1 is made using prior art, profile is square, and size is 9.0*9.0*2.0mm;Correspondingly, Silver electrode 2 is square, and printed patterns size is 7.2*7.2mm;Annular insulative capping material 3 is side's annular, and interior square size is 5.5*5.5mm, outer square size is 8.5*8.5mm.
Method of testing is same as Example 1, after welding lead, and the present embodiment sample bears outer after 25 4kV/2kA pulses Shape is intact, does not occur edge or side arcing flashover.
Embodiment 8
ZnO varistor piece of the present invention is made according to the method for embodiment 1, will using existing piezo-resistance encapsulation technology The ZnO varistor piece welding lead of the present invention made, encapsulates epoxy resin, test sample is made.
Sample test method is same as Example 1, and it is intact that the present embodiment sample bears profile after 60 4kV/2kA pulses.
Embodiment 9
ZnO varistor piece of the present invention is made according to the method for embodiment 5, will using existing piezo-resistance encapsulation technology The ZnO varistor piece welding lead of the present invention made, encapsulates epoxy resin, test sample is made.
Sample test method is same as Example 1, and it is intact that the present embodiment sample bears profile after 60 4kV/2kA pulses.
Above-described embodiment is preferably embodiment, but embodiments of the present invention are not by above-described embodiment of the invention Limitation, other any Spirit Essences without departing from the present invention and the change made under principle, modification, replacement, combine, simplification, Equivalent substitute mode is should be, is included within protection scope of the present invention.

Claims (10)

1. a kind of high-energy tolerance ZnO varistor piece preparation method, it is characterised in that comprise the following steps:
S1, making ZnO voltage-sensitive ceramic pieces;
S2, the two-face printing silver electrode paste in ZnO voltage-sensitive ceramic pieces, are then sintered to form silver electrode, and obtaining two sides has The pressure-sensitive silver strips of ZnO of silver electrode;
S3, the pressure-sensitive silver strips of ZnO two sides silver electrode edge prepare one layer of annular insulating material, covering insulating material is made ZnO varistor piece;0.5mm is respectively no less than inside and outside the width covering silver electrode edge line of annular insulating material.
2. high-energy tolerance ZnO varistor piece preparation method according to claim 1, it is characterised in that in step S3 Insulating materials be inorganic glass materials or high-molecular organic material.
3. high-energy tolerance ZnO varistor piece preparation method according to claim 2, it is characterised in that step S3 is adopted When preparing insulating materials with inorganic glass materials, unorganic glass slurry is printed at the two sides silver electrode edge of the pressure-sensitive silver strips of ZnO, is baked After dry, sintered glass material obtains the ZnO varistor piece of covering inorganic glass materials;The sintering temperature of inorganic glass materials Sintering temperature than silver electrode in step S2 is at least low 20 degree.
4. high-energy tolerance ZnO varistor piece preparation method according to claim 2, it is characterised in that step S3 is selected Insulating materials is prepared as high-molecular organic material with heat reactive resin, is printed at the two sides silver electrode edge of the pressure-sensitive silver strips of ZnO Heat reactive resin is simultaneously dried, and obtains the ZnO varistor piece of covering heat reactive resin.
5. high-energy tolerance ZnO varistor piece preparation method according to claim 2, it is characterised in that step S3 is selected Insulating materials is prepared as high-molecular organic material with light-cured resin, is printed at the two sides silver electrode edge of the pressure-sensitive silver strips of ZnO Light-cured resin simultaneously solidifies through ultraviolet light, obtains the ZnO varistor piece of covering light-cured resin.
6. high-energy tolerance ZnO varistor piece preparation method according to claim 1, it is characterised in that the annular The outer shroud of insulating materials reaches the edge of ZnO voltage-sensitive ceramic pieces.
7. a kind of high-energy tolerance ZnO varistor piece, it is characterised in that including individual layer voltage-sensitive ceramic piece, be printed on pressure-sensitive pottery The silver electrode and insulating materials on ceramics two sides;The insulating materials is covered on the edge of silver electrode, and the width of insulating materials 0.5mm is respectively no less than inside and outside degree covering silver electrode edge line.
8. high-energy tolerance ZnO varistor piece according to claim 7, it is characterised in that the insulating materials is nothing Machine glass material or high-molecular organic material.
9. high-energy tolerance ZnO varistor piece according to claim 8, it is characterised in that the organic polymer material Expect for heat reactive resin or light-cured resin.
10. high-energy tolerance ZnO varistor piece according to claim 7, it is characterised in that the insulating materials is ring Shape insulating materials, its outer shroud reaches the edge of voltage-sensitive ceramic piece.
CN201710357460.3A 2017-05-19 2017-05-19 A kind of high-energy tolerance ZnO varistor piece and preparation method thereof Pending CN107146667A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201710357460.3A CN107146667A (en) 2017-05-19 2017-05-19 A kind of high-energy tolerance ZnO varistor piece and preparation method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201710357460.3A CN107146667A (en) 2017-05-19 2017-05-19 A kind of high-energy tolerance ZnO varistor piece and preparation method thereof

Publications (1)

Publication Number Publication Date
CN107146667A true CN107146667A (en) 2017-09-08

Family

ID=59778164

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201710357460.3A Pending CN107146667A (en) 2017-05-19 2017-05-19 A kind of high-energy tolerance ZnO varistor piece and preparation method thereof

Country Status (1)

Country Link
CN (1) CN107146667A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111439996A (en) * 2019-01-17 2020-07-24 陕西华星电子集团有限公司 Piezoresistor ceramic material and preparation method thereof

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5472453A (en) * 1977-11-21 1979-06-09 Mitsubishi Electric Corp Nonnlinear resistor
JP3149095U (en) * 2008-12-25 2009-03-12 岡谷電機産業株式会社 Barista
CN106448974A (en) * 2016-11-06 2017-02-22 合肥圣达电子科技实业有限公司 Pressure-sensitive resistor capable of preventing aluminum electrode layer from hydrothermal ageing and invalidation and preparation method of pressure-sensitive resistor

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5472453A (en) * 1977-11-21 1979-06-09 Mitsubishi Electric Corp Nonnlinear resistor
JP3149095U (en) * 2008-12-25 2009-03-12 岡谷電機産業株式会社 Barista
CN106448974A (en) * 2016-11-06 2017-02-22 合肥圣达电子科技实业有限公司 Pressure-sensitive resistor capable of preventing aluminum electrode layer from hydrothermal ageing and invalidation and preparation method of pressure-sensitive resistor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111439996A (en) * 2019-01-17 2020-07-24 陕西华星电子集团有限公司 Piezoresistor ceramic material and preparation method thereof

Similar Documents

Publication Publication Date Title
CN101796596B (en) Reduced cycle time manufacturing processes for thick film resistive devices
CN107683027A (en) The processing method of the high-power wave detector of X-band
CN206585772U (en) Ceramic heating rod with temp sensing function
JPH04221801A (en) Varister structure
CN107146667A (en) A kind of high-energy tolerance ZnO varistor piece and preparation method thereof
CN109363247A (en) A kind of preparation method of electronic cigarette and its chip heater and chip heater
CN101796595A (en) Thick film layered resistive device employing a dielectric tape
CN104198079A (en) Quick response thermosensitive chip with high precision and reliability and manufacturing method thereof
Drumea et al. Analysis of current carrying capacity of silver-based conductive pastes for PCB repair
JPH04221802A (en) Varister structure
US7741949B2 (en) Varistor
CN206834010U (en) A kind of high-energy tolerance ZnO varistor piece
CN106448974A (en) Pressure-sensitive resistor capable of preventing aluminum electrode layer from hydrothermal ageing and invalidation and preparation method of pressure-sensitive resistor
CN105606247B (en) A kind of thermistor and its manufactured temperature sensor of high temperature resistant quick response
JPH1196871A (en) Resistance-temperature fuse and its manufacture
CN207038272U (en) A kind of SMD ZnO varistor
CN203326360U (en) Esd protection structure
CN206893381U (en) A kind of surface is installed by ZnO varistor
CN107146668A (en) A kind of surface is installed by ZnO varistor and preparation method thereof
CN107093506A (en) A kind of SMD ZnO varistor and preparation method thereof
CN209747264U (en) Secondary safety protection element for laser marking
JP3838184B2 (en) Manufacturing method of anti-static parts
JPH10199709A (en) Multilayer type varistor
CN207719587U (en) ESD protection device
CN101950645A (en) Chip overvoltage protector and manufacturing method thereof

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
RJ01 Rejection of invention patent application after publication

Application publication date: 20170908