CN107144736A - The quasi-optical cell method wideband of material complex dielectric permittivity tests non-equiphase surface modification method - Google Patents
The quasi-optical cell method wideband of material complex dielectric permittivity tests non-equiphase surface modification method Download PDFInfo
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- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
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- G01R27/02—Measuring real or complex resistance, reactance, impedance, or other two-pole characteristics derived therefrom, e.g. time constant
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Abstract
The present invention provides a kind of quasi-optical cell method wideband of material complex dielectric permittivity and tests non-equiphase surface modification method, and a sample wideband complex dielectric permittivity can be achieved and accurately tests.By the analysis being distributed to Gaussian beam electromagnetic field phase in quasi optical cavity, according to the matching relationship of waist radius at testing sample upper surface, i.e. air and areas of dielectric interface, actual phase distribution function at sample upper surface is obtained.Energy storage in sample plane and wavefront Spherical Clearance is solved by perturbation theory, so as to obtain mismatching caused frequency displacement by sample surfaces and Wave-front phase.Non- equiphase surface at sample upper surface is corrected in conjunction with preset formula；The influence for the non-equiphase surface error brought in quasi-optical cell method wideband test due to thickness of sample is have modified, the wideband test of quasi-optical cell method material complex dielectric permittivity can be more effectively carried out, improve the precision of quasi optical cavity fado Mould Breadth frequency test.
Description
Technical field
The invention belongs to dielectric material technical field of measurement and test, and in particular to microwave, millimeter wave frequency band quasi-optical resonator method
Dielectric material complex dielectric permittivity wideband measuring technology.
Background technology
In complex dielectric constant of microwave dielectric material technical field of measurement and test, Resonant-cavity Method measurement is because its sensitivity is high, test
The expanded application of the characteristics of degree of accuracy is high.It is widely used in superhigh frequency band generally when carrying out microwave measurement using the resonance method
Closed resonator.But in high microwave frequency section, the use of resonator can meet difficulty.First, due to resonant cavity size direct ratio
In resonance wavelength, when working frequency is improved, the size of resonator will correspondingly reduce, and the Q values of resonator can be also remarkably decreased,
When wavelength is extremely short, volume may be small to the degree that can not be realized, cavity processing inconvenience.Especially for medium examination
Sample, it is difficult to matching for sample and resonator is ensured, while the influence of the air gap will can not ignore；Second, if in higher-frequency
Higher mode is operated in the closing resonator of large-size in rate, near higher modes, intensive many other patterns, pattern
Between interval it is too close, it is difficult to take effective pattern control techniques, the differentiation of pattern will also become very difficult.And for standard
Optical resonator, these problems are all not present.Because its size can be much larger than the operation wavelength of resonator so that processing side
Just, and its mode of resonance frequency spectrum is also more sparse, single-mode behavior is fabulous；Additionally due to quasi optical cavity is open cavity, metal
Loss is low, and the corresponding field distribution of mode of operation of selection is relatively concentrated, and the waist radius of Gaussian beam is small, and radiation loss is small, so Q
Value is high.Due to the series of advantages of quasi-optical resonator, it has been supplied in measurement frequency, analysis spectrum, research millimeter wave and passed
The multiple fields such as defeated characteristic, measurement medium parameter, the Rs parameters for measuring high-temperature superconducting thin film, and show good performance.
Equiphase surface due to Gaussian beam only at place with a tight waist is plane, and other positions are on-plane surface electromagnetic wave, and sample
Product are normally manufactured as sheet up and down for plane, therefore to reduce test error, generally regulation testing sample thickness is both at home and abroad：
In formula：N is the integer more than or equal to 2, εrFor the relative dielectric constant of sample, λ0For correspondence resonance wavelength.
From (1) formula, the thickness of testing sample is not only relevant with the relative dielectric constant that sample is actual, and and resonance
Frequency is also relevant, and this is accomplished by the estimate for providing a sample in advance, and requires that offer correspondence is different for different frequency
Thickness is put into sample.
After the integral multiple for the half-wavelength that the thickness of testing sample is defined in medium by (1) formula, due on dielectric surface
Electric field is very weak, therefore the influence brought with sample upper surface mismatch of Gaussian beam equiphase surface is smaller, reduces survey with this
Try error.But the dielectric properties for assessment material in wider frequency section, generally require in larger frequency range to sample
Accurately measured.Due to above-mentioned condition limitation, to reduce broadband test error must then provide for different frequency scope
Multiple samples of same material different-thickness, implement relatively difficult, and directly carry out broadband test with simple sample
Larger error will be caused so that it is big to carry out the accurate difficulty of test of wideband using quasi optical cavity.
What Li Ying et al. write《Electromagnetic medium resonator is theoretical with applying》One book is right in " open cavity " one chapter
The nearly confocal cavity of coated by dielectric (also referred to as concave-concave chamber) has done theory deduction, it is contemplated that dieelctric sheet surface is plane, and Gaussian beam exists
Equiphase surface herein is on-plane surface, thus the error caused by caused mismatch, and phase is not carried out to flat-concave cavity in proviso
Close analysis, and non-inverting into the test of material complex dielectric permittivity quasi-optical cell method wideband in the amendment of non-equiphase surface.
The content of the invention
For above the deficiencies in the prior art, present invention aims at providing, a kind of quasi-optical cell method of material complex dielectric permittivity is wide
Frequency tests non-equiphase surface modification method, and same thick specimens are carried out with the requirement that broadband is accurately tested to meet.
The purpose of the present invention is achieved through the following technical solutions：
A kind of quasi-optical cell method wideband of material complex dielectric permittivity tests non-equiphase surface modification method, comprises the steps of：
(1) Gaussian beam phase distribution in quasi optical cavity is analyzed using beam ripple theory；
(2) according to the matching relationship of waist radius at testing sample upper surface, i.e. air and areas of dielectric interface, obtain
Sample upper surface actual phase distribution and electric field and magnetic field intensity, then caused mistake when being plane by real medium piece surface
Difference, solves the energy storage in sample plane and wavefront Spherical Clearance, so as to obtain the frequency shift (FS) as caused by this error
(3) cause frequency inclined for the non-equiphase surface of Gaussian beam according to the dieelctric sheet upper surface obtained in step (2)
MoveResonant frequency to the resonator after load sample is compensated, with reference to not considering that the multiple dielectric obtained by the error is normal
Several calculation formula, you can realize the amendment to complex dielectric permittivity.
It is preferred that, the modification method is applied to flat-concave cavity and concave-concave chamber.
It is preferred that, solve the energy storage in sample plane and wavefront Spherical Clearance with perturbation theory.
It is preferred that, the step (1) is specially：Using beam ripple theory to Gaussian beam phase distribution in quasi optical cavity
Analyzed；
By the theoretical phase expression formula that Gaussian beam is obtained with wave equation of beam ripple：
K is wave number, w in formula0For waist radius, R (z) is wave-front curvature radius, and λ is the operation wavelength of resonator, and p is field
In the modulus of radial variations, l is whole standing wave number of the field along azimuthal variation, and p, l is positive integer.
It is preferred that, the step (2) is specially：
(2) according to the matching relationship of waist radius at testing sample upper surface, i.e. air and areas of dielectric interface, obtain
Sample upper surface actual phase distribution and electric field and magnetic field intensity；
The actual phase distribution in sample upper surface and electric field and magnetic field intensity are as follows：
In formulaD "=d+t/n, For the refractive index of sample,
D be sample upper surface to the distance of concave mirror, t is thickness of sample；
It is then the error caused by plane rather than Gaussian beam equiphase surface as real medium piece surface, utilizes sample upper table
Face actual phase distribution and electric field and magnetic field intensity, solve the energy storage in sample plane and wavefront Spherical Clearance, so that
To thus caused frequency displacement
It is preferred that, the step (3) is specially：
(3) frequency displacement is caused for the non-equiphase surface of Gaussian beam according to the dieelctric sheet upper surface obtained in (2)It is right
The resonant frequency of resonator after load sample is compensated, the calculating of complex dielectric permittivity with reference to obtained from not considering the error
Formula, you can realize the amendment to complex dielectric permittivity；
Wherein, uncorrected relative dielectric constant calculation formula is as follows：
Uncorrected loss angle tangent calculation formula is as follows：
In formula：
w0--- waist radius, mm；
C --- the light velocity, c=3 × 1011mm/s；
Dq--- the distance of level crossing to concave mirror, mm；
F --- resonant frequency, Hz；
Q0s--- it is put into the Q-unloaded after sample；
Q1--- add the Q-unloaded of preferable lossless sample；
Q00--- the Q-unloaded of cavity.
From picking and placeing for the more convenient sample of flat-concave cavity.
The beneficial effects of the invention are as follows：What the present invention solved that traditional quasi-optical cell method is difficult to that wideband accurately tests asks
Topic, it is contemplated that test sample surface be plane caused by error and corrected, effectively increase same sample thickness compared with
Complex dielectric permittivity measuring accuracy in wide frequency ranges.
Brief description of the drawings
Fig. 1 is the electric force lines distribution figure in y=0 planes in platycelous quasi optical cavity.
Fig. 2 is in z0Equiphase surface curve of the different main mould Gaussian beams of three of=0 (at level crossing) at plane θ=0.
The platycelous quasi optical cavity structural representation of Fig. 3 load samples.
Fig. 4 is using same cavity, same sample, before and after modification method proposed by the invention, in 18~40G
Complex dielectric permittivity test result comparison diagram obtained by frequency band.
Wherein, 1 is spherical reflector, and 2 be Gaussian beam, and 3 be equiphase surface, and 4 be sample upper surface, and 5 be testing sample,
6 be plane mirror.
Embodiment
Illustrate embodiments of the present invention below by way of specific instantiation, those skilled in the art can be by this specification
Disclosed content understands other advantages and effect of the present invention easily.The present invention can also pass through specific realities different in addition
The mode of applying is embodied or practiced, the various details in this specification can also based on different viewpoints with application, without departing from
Various modifications or alterations are carried out under the spirit of the present invention.
A kind of quasi-optical cell method wideband of material complex dielectric permittivity tests non-equiphase surface modification method, comprises the steps of：
(1) Gaussian beam phase distribution in quasi optical cavity is analyzed using beam ripple theory；
By beam ripple theory the phase expression formula of Gaussian beam can be obtained with wave equation：
K is wave number, w in formula0For waist radius, R (z) is wave-front curvature radius, and λ is the operation wavelength of resonator, and p is field
In the modulus of radial variations, l is whole standing wave number of the field along azimuthal variation, and p, l is positive integer.
(2) according to the matching relationship of waist radius at testing sample upper surface, i.e. air and areas of dielectric interface, obtain
Sample upper surface actual phase distribution and electric field and magnetic field intensity.
The actual phase distribution in sample upper surface and electric field and magnetic field intensity are as follows：(refer to journal article " millimeter wave
Quasi optical cavity two-layered medium dielectric parameter new survey technique, infrared and millimeter wave journal, in August, 1994, Vol.13, No.4,
p286”)：
In formulaD "=d+t/n, For the refractive index of sample,
D be sample upper surface to the distance of concave mirror, t is thickness of sample.
It is then the error caused by plane rather than Gaussian beam equiphase surface as real medium piece surface, utilizes sample upper table
Face actual phase distribution and electric field and magnetic field intensity, solve the energy storage in sample plane and wavefront Spherical Clearance, so that
To thus caused frequency displacement
(3) frequency displacement is caused for the non-equiphase surface of Gaussian beam according to the dieelctric sheet upper surface obtained in (2)It is right
The resonant frequency of resonator after load sample is compensated, the calculating of complex dielectric permittivity with reference to obtained from not considering the error
Formula
(6), (7), (refer to periodical literature " with 3mm quasi optical cavity tested media piece complex dielectric permittivities [J], aerospace material work
Skill, the second phase, p72 " in 2006), you can realize the amendment to complex dielectric permittivity.
Wherein, uncorrected relative dielectric constant calculation formula is as follows：
Uncorrected loss angle tangent calculation formula is as follows：
In formula：
w0--- waist radius, mm；
C --- the light velocity, c=3 × 1011mm/s；
Dq--- the distance of level crossing to concave mirror, mm；
F --- resonant frequency, Hz；
Q0s--- it is put into the Q-unloaded after sample；
Q1--- add the Q-unloaded of preferable lossless sample；
Q00--- the Q-unloaded of cavity.
From picking and placeing for the more convenient sample of flat-concave cavity.
The above-described embodiments merely illustrate the principles and effects of the present invention, not for the limitation present invention.It is any ripe
Know the personage of this technology all can carry out modifications and changes under the spirit and scope without prejudice to the present invention to above-described embodiment.Cause
This, all those of ordinary skill in the art without departing from disclosed spirit with being completed under technological thought
All equivalent modifications or change, should by the present invention claim be covered.
Claims (6)
1. a kind of quasi-optical cell method wideband of material complex dielectric permittivity tests non-equiphase surface modification method, it is characterised in that comprising following
Step：
(1) Gaussian beam phase distribution in quasi optical cavity is analyzed using beam ripple theory；
(2) according to the matching relationship of waist radius at testing sample upper surface, i.e. air and areas of dielectric interface, sample is obtained
Upper surface actual phase distribution and electric field and magnetic field intensity；Caused error when being then plane by real medium piece surface,
The energy storage in sample plane and wavefront Spherical Clearance is solved, so as to obtain the frequency shift (FS) as caused by this error
(3) frequency shift (FS) is caused for the non-equiphase surface of Gaussian beam according to the dieelctric sheet upper surface obtained in step (2)
Resonant frequency to the resonator after load sample is compensated, with reference to the meter for not considering the complex dielectric permittivity obtained by the error
Calculate formula, you can realize the amendment to complex dielectric permittivity.
2. the quasi-optical cell method wideband of material complex dielectric permittivity according to claim 1 tests non-equiphase surface modification method, its
It is characterised by：The modification method is applied to flat-concave cavity and concave-concave chamber.
3. the quasi-optical cell method wideband of material complex dielectric permittivity according to claim 1 tests non-equiphase surface modification method, its
It is characterised by：The energy storage in sample plane and wavefront Spherical Clearance is solved with perturbation theory.
4. the quasi-optical cell method wideband of material complex dielectric permittivity according to claim 1 tests non-equiphase surface modification method, its
It is characterised by that the step (1) is specially：
Gaussian beam phase distribution in quasi optical cavity is analyzed using beam ripple theory；
By the theoretical phase expression formula that Gaussian beam is obtained with wave equation of beam ripple：
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To the modulus of change, l is whole standing wave number of the field along azimuthal variation, and p, l are positive integer.
5. the quasi-optical cell method wideband of material complex dielectric permittivity according to claim 1 tests non-equiphase surface modification method, its
It is characterised by that the step (2) is specially：
(2) according to the matching relationship of waist radius at testing sample upper surface, i.e. air and areas of dielectric interface, sample is obtained
Upper surface actual phase distribution and electric field and magnetic field intensity；
The actual phase distribution in sample upper surface and electric field and magnetic field intensity are as follows：
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Rate, d be sample upper surface to the distance of concave mirror, t is thickness of sample；
It is then the error caused by plane rather than Gaussian beam equiphase surface as real medium piece surface, utilizes sample upper surface real
The phase distribution and electric field and magnetic field intensity on border, solve the energy storage in sample plane and wavefront Spherical Clearance, thus obtain by
This caused frequency displacement
6. the quasi-optical cell method wideband of material complex dielectric permittivity according to claim 1 tests non-equiphase surface modification method, its
It is characterised by that the step (3) is specially：
(3) frequency displacement is caused for the non-equiphase surface of Gaussian beam according to the dieelctric sheet upper surface obtained in (2)To loading sample
The resonant frequency of resonator after product is compensated, the calculation formula of complex dielectric permittivity with reference to obtained from not considering the error,
The amendment to complex dielectric permittivity can be achieved；
Wherein, uncorrected relative dielectric constant calculation formula is as follows：
Uncorrected loss angle tangent calculation formula is as follows：
In formula：
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w0--- waist radius, mm；
C --- the light velocity, c=3 × 1011mm/s；
Dq--- the distance of level crossing to concave mirror, mm；
F --- resonant frequency, Hz；
Q0s--- it is put into the Q-unloaded after sample；
Q1--- add the Q-unloaded of preferable lossless sample；
Q00--- the Q-unloaded of cavity.
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| CN110705092A (en) * | 2019-09-27 | 2020-01-17 | 天津大学 | Error correction method based on resonant cavity microwave perturbation theory |
| CN111239498A (en) * | 2020-03-18 | 2020-06-05 | 山东国瓷功能材料股份有限公司 | Device and method for testing dielectric property of material |
| CN111487470A (en) * | 2020-03-18 | 2020-08-04 | 山东国瓷功能材料股份有限公司 | Device and method for testing dielectric property of material |
| CN111856150A (en) * | 2020-08-18 | 2020-10-30 | 中电科仪器仪表有限公司 | Error correction method for dielectric constant test of quasi-optical cavity along with frequency change |
| CN113608032A (en) * | 2021-07-08 | 2021-11-05 | 中电科思仪科技股份有限公司 | Method for testing dielectric property of quasi-optical cavity double-layer material |
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| CN109932057A (en) * | 2019-04-01 | 2019-06-25 | 电子科技大学 | Optical power detection apparatus and method based on quasi optical cavity microwave resonance principle |
| CN110596466A (en) * | 2019-07-31 | 2019-12-20 | 电子科技大学 | Electromagnetic parameter detection system and method for high-power vacuum window material |
| CN110705092A (en) * | 2019-09-27 | 2020-01-17 | 天津大学 | Error correction method based on resonant cavity microwave perturbation theory |
| CN111239498A (en) * | 2020-03-18 | 2020-06-05 | 山东国瓷功能材料股份有限公司 | Device and method for testing dielectric property of material |
| CN111487470A (en) * | 2020-03-18 | 2020-08-04 | 山东国瓷功能材料股份有限公司 | Device and method for testing dielectric property of material |
| CN111239498B (en) * | 2020-03-18 | 2022-05-31 | 山东国瓷功能材料股份有限公司 | Device and method for testing dielectric property of material |
| CN111856150A (en) * | 2020-08-18 | 2020-10-30 | 中电科仪器仪表有限公司 | Error correction method for dielectric constant test of quasi-optical cavity along with frequency change |
| CN111856150B (en) * | 2020-08-18 | 2024-02-02 | 中电科思仪科技股份有限公司 | Error correction method for frequency-dependent change of quasi-optical cavity dielectric constant test |
| CN114076886A (en) * | 2020-08-20 | 2022-02-22 | 深南电路股份有限公司 | Establishing method for correcting PCB dielectric constant model, correcting method and correcting system |
| CN113608032A (en) * | 2021-07-08 | 2021-11-05 | 中电科思仪科技股份有限公司 | Method for testing dielectric property of quasi-optical cavity double-layer material |
| CN113608032B (en) * | 2021-07-08 | 2024-02-06 | 中电科思仪科技股份有限公司 | Method for testing dielectric property of quasi-optical cavity double-layer material |
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