CN107134448B - Improve the integrability method of visible light communication LED light source modulation bandwidth - Google Patents
Improve the integrability method of visible light communication LED light source modulation bandwidth Download PDFInfo
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- 239000010409 thin film Substances 0.000 claims abstract description 18
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- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
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- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 claims description 2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/14—Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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Abstract
一种提高可见光通信LED光源调制带宽的可集成化方法，包括如下步骤：步骤1：在绝缘衬底上的中间制作金属薄膜电阻；步骤2：在金属薄膜电阻的两侧分别制作一个平板电容的下电极板；步骤3：在金属薄膜电阻、下电极板以及绝缘衬底的上方沉积一层绝缘介质层，作为平板电容的中间介质层；步骤4：在绝缘介质层上的中间两侧制作LED贴封所需的正电极和负电极，该正电极和负电极不相连接；步骤5：在正电极和负电极的外侧绝缘介质层上制作平板电容的上电极板，两个上电极板分别同正电极和负电极相连，构成并联均衡电路；步骤6：将LED芯片利用焊球贴封在制备好的正电极和负电极上，完成集成器件的制作。
An integratable method for improving the modulation bandwidth of an LED light source for visible light communication, comprising the following steps: step 1: making a metal thin film resistor in the middle of an insulating substrate; step 2: making a plate capacitor on both sides of the metal thin film resistor respectively Lower electrode plate; Step 3: Deposit an insulating dielectric layer on top of the metal film resistor, the lower electrode plate and the insulating substrate as an intermediate dielectric layer of the flat capacitor; Step 4: Fabricate LEDs on both sides of the insulating dielectric layer The positive electrode and the negative electrode required for sticking and sealing, the positive electrode and the negative electrode are not connected; Step 5: Make the upper electrode plate of the flat capacitor on the outer insulating medium layer of the positive electrode and the negative electrode, and the two upper electrode plates are respectively Connected with the positive electrode and the negative electrode to form a parallel equalization circuit; Step 6: The LED chip is attached and sealed on the prepared positive electrode and the negative electrode with solder balls to complete the fabrication of the integrated device.
Description
Technical field
The invention belongs to technical field of visible light communication, and in particular to a kind of raising visible light communication LED light source modulation band
Wide integrability method.
Background technique
Visible light communication technology refers to the transmission using the light of visible light wave range as the carrier of information, without wire channel
Medium directly transmits the communication mode of optical signal in air.Visible light communication has transmission rate height, electromagnetic-radiation-free, energy
Consume the distinguishing features such as low, abundant, the confidentiality height of frequency spectrum, it has also become the hot spot of short distance free-space communication.
For visible light communication light source as one of communication system key, effect is the electric signal turn that will carry specific information
It is melted into the optical signal of electromagnetic-radiation-free pollution.Visible light communication LED light source of the present invention, which uses, is based on GaN or GaAs material
LED chip, Electro-optical Modulation principle is based on the radiation recombination effect in multiple quantum wells, i.e., when periodic modulation additional on LED
When signal, the carrier concentration for being injected into multiple quantum wells will change, and the carrier quantity of radiation recombination changes therewith,
The visual intensity of outgoing cyclically-varying, final tune realized to emergent light with the carrier number amount variation of radiation recombination
System.
Commercial LED is influenced by device RC time itself and carrier lifetime, and available modulation is no more than 40MHZ.
Reported raising modulation bandwidth method is that preemphasis circuit is added between signal source and LED.The realization process of this method is
So that signal of communication is first passed through high pass mode filter, the lower signal of frequency is decayed, after amplifier amplifies, then is passed through
Bias-T is added in constant drive current and is transferred to LED light source, is ultimately converted to optical signal.The preemphasis circuit passes through production
The module of pcb board grade is realized.Due to including passive filter module, amplifier module, Bias-T from preemphasis circuit to LED
Module, multiple module-cascades significantly improve design difficulty.Meanwhile module number more multiple ic structure is more complicated, it is right
The number of plies of PCB circuit board and the requirement of area are also higher, and thus preparation cost will also significantly improve.Therefore, with multiple module levels
Preemphasis circuit design difficulty with the characteristics of connection is big, and circuit structure is complicated and preparation cost is high.
Visible light communication LED light source is influenced by self capacity characteristic, and impedance is simultaneously non-constant, but with transmission signal
Frequency increase and gradually decrease.Based on the feature, the positive and negative electrode design at LED chip both ends equalizing circuit in parallel can be with
Improve the available modulation of LED.The parallel connection equalizing circuit is made of capacitor and resistance.The effect of capacitor is to stop direct current signal
Pass through, parallel circuit is avoided to generate DC losses；Resistance is connected in series to the capacitor, and the impedance value of resistance value and LED chip is close, effect
It is the low frequency part weakened in input signal, and the high frequency section of input signal will all be transferred to LED, to reach balanced effect
Fruit improves modulation bandwidth.Since equalizing circuit structure in parallel is simple, number of processes needed for realization process is few, also compatible
Si base integrated technique carries out it with LED chip integrated to make design difficulty and preparation cost greatly and reduce.
Summary of the invention
The purpose of the present invention is to provide it is a kind of improve visible light communication LED light source modulation bandwidth integrability method,
The production of this method technique is simple；The Si base integrated technique of compatible maturation, and shadow will not be brought to original LED luminescent properties
It rings；After equalizing circuit in parallel is integrated with LED chip, device area is close with not integrated LED component；It can significantly improve visible
The available modulation of optic communication LED light source.
The present invention provides a kind of integrability method for improving visible light communication LED light source modulation bandwidth, including walks as follows
It is rapid:
Step 1: intermediate fabrication metal thin film resistor on an insulating substrate；
Step 2: making the lower electrode plate an of capacity plate antenna respectively in the two sides of metal thin film resistor；
Step 3: in one layer of insulating medium layer of disposed thereon of metal thin film resistor, lower electrode plate and insulating substrate, making
For the middle dielectric layer of capacity plate antenna；
Step 4: the intermediate two sides production LED on insulating medium layer seals required positive electrode and negative electrode, the positive electricity
Pole and negative electrode are not connected with；
Step 5: the electric pole plate of capacity plate antenna is made on the outside insulating medium layer of positive electrode and negative electrode, on two
Electrode plate is connected with positive electrode with negative electrode respectively, constitutes equalizing circuit in parallel；
Step 6: LED chip being sealed on the positive electrode and negative electrode prepared using soldered ball, completes integrated device
Production.
The invention has the advantages that the production of this method technique is simple；The Si base integrated technique of compatible maturation, and will not
Original LED luminescent properties are affected；After equalizing circuit in parallel is integrated with LED chip, device area is the same as not integrated LED
Device is close；The available modulation of visible light communication LED light source can be significantly improved.
Detailed description of the invention
It is clear to be more clear the object, technical solutions and advantages of the present invention, below in conjunction with specific embodiment, and reference
Attached drawing is described in further details the present invention.Here it is illustrated as a preferred embodiment with inverted structure LED chip,
In:
Fig. 1 is production flow diagram of the invention；
Fig. 2 is structural schematic diagram of the invention.
Specific embodiment
It please refers to shown in Fig. 1-Fig. 2, the present invention provides a kind of integrating for raising visible light communication LED light source modulation bandwidth
Change method, includes the following steps:
Step 1: the intermediate fabrication metal thin film resistor 9 in insulating substrate 1, the material of the insulating substrate 1 are blue precious
Stone, silicon, silicon carbide, ceramics or surface have the substrate of insulating layer, and typical resistivity is greater than 300 Ω cm, and thickness is greater than 50um；
The material of the metal thin film resistor 9 is nickel, chromium, copper, gold, aluminium, platinum, tungsten, tin or silver, or the combination of the above metal；In addition, golden
The resistance value for belonging to film resistor 9 is obtained by changing thickness, width and the length of metallic film 9, and resistance value specific size is with LED core
The impedance magnitude of piece 6 is related, such as plan design obtains the modulation bandwidth of 300MHz, the resistance of LED chip 6 under preferable 300MHz
Resistance value of the anti-value as metal thin film resistor 9.
Step 2: making the lower electrode plate 2 an of capacity plate antenna respectively in the two sides of metal thin film resistor 9；Two lower electrodes
Plate 2 is connected with 9 both ends of metal thin film resistor respectively, for constituting concatenated RC circuit；Lower electrode plate 2 and metal thin film resistor 9
Metal material used can be identical or not identical.
Step 3: in one layer of insulating medium layer of disposed thereon of metal thin film resistor 9, lower electrode plate 2 and insulating substrate 1
8, as the middle dielectric layer of capacity plate antenna, the material of the insulating medium layer 8 is HfO2、Al2O3、SiO2、TiO2Or ZrO2, or
The stacked combination of the above material.
Step 4: the intermediate two sides production LED on insulating medium layer 8 seals required positive electrode 7 and negative electrode 4, this is just
Electrode 7 and negative electrode 4 are not connected with；
Step 5: the electric pole plate 3 of capacity plate antenna is made on the outside insulating medium layer 8 of positive electrode 7 and negative electrode 4.Two
A electric pole plate 3 is connected with positive electrode 7 with negative electrode 4 respectively, with lower electrode plate 2, metal thin film resistor 9 and insulating medium layer 8
Equalizing circuit in parallel is constituted together；Metal used in positive electrode 7, negative electrode 4 and electric pole plate 3 be nickel, chromium, copper, gold, aluminium, platinum,
Tungsten, tin or silver, or the combination of the above metal.
The effect of metal thin film resistor 9 is the low frequency part weakened in input signal in the parallel connection equalizing circuit, and defeated
The high frequency section for entering signal will all be transferred to LED chip 6, to reach portfolio effect, improve modulation bandwidth.
Electric pole plate 3, lower electrode plate 2 and insulating medium layer 8 constitute capacitor in the parallel connection equalizing circuit, and effect is resistance
Gear direct current signal passes through, and parallel circuit is avoided to generate DC losses；The capacitance of the capacitor be by change upper and lower electrode plate 3,
The thickness of 2 effective area and the insulating medium layer 8 obtains.
Step 6: LED chip 6 being sealed on the positive electrode 7 and negative electrode 4 prepared using soldered ball 5, completes integrator
The production of part, the encapsulating structure of the LED chip 6 are inverted structure, positive assembling structure or vertical structure.
It is worth noting that the above is only a specific embodiment of the present invention, it is not intended to restrict the invention, it is all
Within the spirit and principles in the present invention, any modification, equivalent substitution, improvement and etc. done should be included in guarantor of the invention
Within the scope of shield.
Claims (8)
1. a kind of integrability method for improving visible light communication LED light source modulation bandwidth, includes the following steps:
Step 1: intermediate fabrication metal thin film resistor on an insulating substrate；
Step 2: making the lower electrode plate an of capacity plate antenna respectively in the two sides of metal thin film resistor；
Step 3: in one layer of insulating medium layer of disposed thereon of metal thin film resistor, lower electrode plate and insulating substrate, as flat
The middle dielectric layer of plate capacitor；
Step 4: intermediate two sides on insulating medium layer production LED seal needed for positive electrode and negative electrode, the positive electrode and
Negative electrode is not connected with；
Step 5: the electric pole plate of capacity plate antenna, two top electrodes are made on the outside insulating medium layer of positive electrode and negative electrode
Plate is connected with positive electrode with negative electrode respectively, constitutes equalizing circuit in parallel；
Step 6: LED chip being sealed on the positive electrode and negative electrode prepared using soldered ball, completes the production of integrated device.
2. the integrability method according to claim 1 for improving visible light communication LED light source modulation bandwidth, wherein step
The material of 1 insulating substrate is the substrate that sapphire, silicon, silicon carbide, ceramics or surface have insulating layer.
3. the integrability method according to claim 1 for improving visible light communication LED light source modulation bandwidth, wherein step
The material of 1 metal thin film resistor is nickel, chromium, copper, gold, aluminium, platinum, tungsten, tin or silver, or the combination of the above metal；In addition, golden
The resistance value for belonging to film resistor is obtained by changing thickness, width and the length of metallic film, and resistance value specific size is with LED chip
Impedance magnitude it is related.
4. the integrability method according to claim 1 for improving visible light communication LED light source modulation bandwidth, wherein step
The material of 2 insulating medium layers is HfO2、Al2O3、SiO2、TiO2Or ZrO2, or the stacked combination of the above material.
5. the integrability method according to claim 1 for improving visible light communication LED light source modulation bandwidth, wherein described
The capacitance of capacity plate antenna is obtained by the thickness of the effective area and the insulating medium layer that change upper and lower electrode plate.
6. the integrability method according to claim 1 for improving visible light communication LED light source modulation bandwidth, wherein step
Electric pole plate, lower electrode plate and insulating medium layer constitute capacitor in 5 equalizing circuits in parallel, and effect is to stop direct current signal
Pass through, parallel circuit is avoided to generate DC losses.
7. the integrability method according to claim 1 for improving visible light communication LED light source modulation bandwidth, wherein metal
Film resistor is connected with lower electrode plate, and the impedance value of impedance value and LED chip is close, and effect is low in decrease input signal
Frequency part, and the high frequency section of input signal will all be transferred to LED chip, to reach portfolio effect, improve modulation bandwidth.
8. the integrability method according to claim 1 for improving visible light communication LED light source modulation bandwidth, wherein described
The encapsulating structure of LED chip is inverted structure, positive assembling structure or vertical structure.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710252392.4A CN107134448B (en) | 2017-04-18 | 2017-04-18 | Improve the integrability method of visible light communication LED light source modulation bandwidth |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201710252392.4A CN107134448B (en) | 2017-04-18 | 2017-04-18 | Improve the integrability method of visible light communication LED light source modulation bandwidth |
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| CN107134448B true CN107134448B (en) | 2019-04-02 |
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| CN117612997B (en) * | 2023-11-23 | 2024-08-20 | 中国工程物理研究院电子工程研究所 | Thin film resistor type temperature and strain sensing integration method compatible with TSV adapter plate |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100200941A1 (en) * | 2006-12-20 | 2010-08-12 | Junichi Fujikata | Photodiode, optical communication device, and optical interconnection module |
| US20110175138A1 (en) * | 2006-04-21 | 2011-07-21 | Koninklijke Philips Electronics N.V. | Semiconductor light emitting device with integrated electronic components |
| EP2437581A1 (en) * | 2010-09-30 | 2012-04-04 | Odelo GmbH | Light diode on a ceramic substrate basis |
| CN105895653A (en) * | 2016-05-16 | 2016-08-24 | 华南师范大学 | High-voltage visible light communication LED device and manufacturing method thereof |
| CN106549031A (en) * | 2016-11-25 | 2017-03-29 | 复旦大学 | A kind of monolithic integrated device based on body GaN material and preparation method thereof |
-
2017
- 2017-04-18 CN CN201710252392.4A patent/CN107134448B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110175138A1 (en) * | 2006-04-21 | 2011-07-21 | Koninklijke Philips Electronics N.V. | Semiconductor light emitting device with integrated electronic components |
| US20100200941A1 (en) * | 2006-12-20 | 2010-08-12 | Junichi Fujikata | Photodiode, optical communication device, and optical interconnection module |
| EP2437581A1 (en) * | 2010-09-30 | 2012-04-04 | Odelo GmbH | Light diode on a ceramic substrate basis |
| CN105895653A (en) * | 2016-05-16 | 2016-08-24 | 华南师范大学 | High-voltage visible light communication LED device and manufacturing method thereof |
| CN106549031A (en) * | 2016-11-25 | 2017-03-29 | 复旦大学 | A kind of monolithic integrated device based on body GaN material and preparation method thereof |
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