CN104900539B - Realize efficient broadband, the internally matched device preparation method of small size low cost - Google Patents
Realize efficient broadband, the internally matched device preparation method of small size low cost Download PDFInfo
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- CN104900539B CN104900539B CN201510314815.1A CN201510314815A CN104900539B CN 104900539 B CN104900539 B CN 104900539B CN 201510314815 A CN201510314815 A CN 201510314815A CN 104900539 B CN104900539 B CN 104900539B
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Abstract
The invention discloses a kind of internally matched device preparation method for realizing efficient broadband, small size low cost, it is related to the preparation method technical field of microwave device.The described method comprises the following steps：1）Grid match circuit and leakage match circuit make；2）Matching capacitance makes；3）Active chip makes；4）Assembling process：Grid match circuit, leakage match circuit and active chip are sintered on the metallic substrate using golden tin solder first, then matching capacitance and 100pF electric capacity are bonded all parts with the bonding line of diameter 25um on grid match circuit and leakage match circuit, finally using conductive adhesive and link together.The internally matched device manufactured by the technique has the advantages that frequency range wide, efficiency high, easily use, size are small.
Description
Technical field
Efficient broadband, small size are realized the present invention relates to the preparation method technical field of microwave device, more particularly to one kind
The internally matched device preparation method of low cost.
Background technology
At present, personal mobile communication equipment have become people communicate with each other, one of the main tool that understands the world, and I
Life, work and amusement being merged slowly.People are to the content of acquisition information, the need of the speed of processing information
Asking increasingly strengthens, and is mainly reflected in the more and more higher of the function and information processing rate requirement to mobile device so that mobile whole
The competition of end manufacturer grows in intensity.Associated communication system is promoted constantly to upgrade, the singal reporting code of important traffic chip, energy
Consumption index etc. is updated, WLAN, WIFI, WIMAX and personal mobile device etc., and its overall performance is continuously available and carries
Rise and strengthen, appearance and size constantly reduces.Current 3G people's mobile device is widely used, and 4G communication equipments have been released,
5G communications are researched and developed, therefore to core devices, the performance requirement also more and more higher of circuit, more and more urgently.
Transmission channel and receiving channel are the most key, essential functional units in communication system, realize Information Number
According to mutual transmission, the technical indicator of the power device of its core substantially governs the key technical indexes of passage.Exist at present
Requirement higher simply is proposed to the power of device, efficiency and the linearity in communication system, have ignored device package dimension,
The index with economic benefit such as cost.
The device that can be used for the communications field both at home and abroad is more, and 50 can be divided into according to the impedance value of input, output port impedance
Ω devices and the class of non-50 omega two, represent two kinds of different occupation modes.Port value is that the device of 50 Ω refers to input, output resistance
Anti- is all 50 Ω devices, and this kind of device is by using the sheet material and bonding gold wire of high-k the impedance matching of active chip
It is very convenient when user uses to 50 Ω, but usable frequency range is narrow, bandwidth within tens MHz ranges, price ratio
Costly.The not no determination value of the port value of non-50 omega device, needs the S parameter provided with reference to supplier, user oneself when using
Design match circuit, input, the Ω of output matching 50.The low production cost of this kind of device, user side has been gone to by technical difficulty,
Very big cavity space is typically taken up, is used very inconvenient.
Communication equipment using the main cause that narrowband device is more, broadband device is few have it is following some：What communication equipment was used
The frequency of device work is relatively low, concentrates on L, S-band, realizes that the technical difficulty in broadband is larger；Realize that broadband needs more piece to match
The sheet capacitor of circuit or various capacitances, often volume is very huge for the device being fabricated to, and takes system space greatly, batch
Conformity of production is poor；The function of equipment is simple, it is not necessary to which the factor such as larger data-handling capacity limits grinding for broadband device
Hair, application.
The content of the invention
The technical problems to be solved by the invention are to provide a kind of interior adaptation for realizing that efficient broadband, small size are inexpensive
Part preparation method, the internally matched device manufactured by the technique has the advantages that frequency range wide, efficiency high, easily use, size are small.
In order to solve the above technical problems, the technical solution used in the present invention is：One kind realizes that efficient broadband, small size are low
The internally matched device preparation method of cost, it is characterised in that the described method comprises the following steps：
1）Grid match circuit and leakage match circuit make：The grid match circuit figure and leakage match circuit figure that will be designed
Grown respectively on a ceramic substrate according to ceramics technological process, laser boring and electroplated ground are carried out to ceramic substrate, form grid
Match circuit and leakage match circuit；
2）Matching capacitance makes：Matching capacitance is based on GaAs technique platforms, is produced on GaAs substrate bases, exists first
Capacitor lower electrode is made on GaAs substrate bases, one layer AlN layers is then grown as medium, then electric capacity is made on dielectric layer
Top electrode, bottom electrode is grounded by via, and Top electrode is connected by bonding with microstrip line；
3）Active chip makes：Active chip is made and is based on GaN technique platforms, and active chip is made using 0.25 μm of technique
GaN HEMT devices and stabilizing circuit；
4）Assembling process：Grid match circuit, leakage match circuit and active chip are sintered in using golden tin solder first
In metal substrate, then by matching capacitance and 100pF electric capacity using conductive adhesive is in grid match circuit and leaks on match circuit,
All parts are bonded with the bonding line of diameter 25um finally and are linked together.
Further preferred technical scheme is：The ceramic substrate is Al2O3 Ceramic substrate.
It is using the beneficial effect produced by above-mentioned technical proposal：Methods described uses ceramics technique, MMIC techniques, dress
Realize that there is frequency range wide, easily efficiency high, the small element manufacturing of use, size with operations such as techniques.
Brief description of the drawings
Fig. 1 is the schematic diagram of grid match circuit in the present invention；
Fig. 2 is the schematic diagram of leakage match circuit in the present invention；
Fig. 3 is the schematic diagram of matching capacitance in the present invention；
Fig. 4 is the schematic diagram of 100pF electric capacity of the present invention；
Fig. 5 is the schematic diagram of active device in the present invention；
Fig. 6 is structural representation of the invention.
Specific embodiment
With reference to the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Ground description, it is clear that described embodiment is only a part of embodiment of the invention, rather than whole embodiments.It is based on
Embodiment in the present invention, it is every other that those of ordinary skill in the art are obtained under the premise of creative work is not made
Embodiment, belongs to the scope of protection of the invention.
Many details are elaborated in the following description in order to fully understand the present invention, but the present invention can be with
Other manner described here is different from using other to implement, those skilled in the art can be without prejudice to intension of the present invention
In the case of do similar popularization, therefore the present invention is not limited by following public specific embodiment.
The method is mainly included the following steps that：
1）Design
The purpose of principle diagram design is that input, output-resistor matches 50 Ω in order to device has preferable efficiency index；
Meet use demand in frequency band wider, device size is reduced by rationally effective layout.Broadband device is for stability
It is required that higher, in order to improve the stability of device and reduce device volume, the circuit and active device that will improve stability do
Together.
2）Component makes
In order to reduce the size of device, it is necessary to reduce the size of each component in device.Influence first portion of device size
Part mainly has：Grid match circuit, leakage match circuit, matching capacitance, active chip, bonding gold wire.By production newest at present
Technique platform, with reference to having designed and produced very small size of matching component, and match circuit.
3）Components and parts assembling
By the matching component and match circuit that complete using techniques such as sintering, bonding, bondings, carrier-pellet is fixed on
In the shell of upper or cermet encapsulation.
Specifically, the invention discloses a kind of internally matched device preparation method for realizing efficient broadband, small size low cost,
The described method comprises the following steps：
1）Grid match circuit and leakage match circuit make：The grid match circuit that will be designed（As shown in Figure 1）Matched with leakage
Circuit（As shown in Figure 2）Figure is grown on a ceramic substrate according to ceramics technological process, and laser boring is carried out simultaneously to ceramic substrate
Electroplated ground, forms grid match circuit and leakage match circuit, it is preferred that the ceramic substrate is Al2O3 Ceramic substrate；
2）Matching capacitance makes：Matching capacitance is based on GaAs technique platforms, is produced on GaAs substrate bases, exists first
Capacitor lower electrode is made on GaAs substrate bases, one layer AlN layers is then grown as medium, then electric capacity is made on dielectric layer
Top electrode, bottom electrode is grounded by via, and Top electrode is connected by bonding with microstrip line, as shown in Figure 3；
3）Active chip makes：Active chip is made and is based on GaN technique platforms, and active chip is made using 0.25 μm of technique
GaN HEMT devices and stabilizing circuit, as shown in Figure 5；
4）Assembling process：Grid match circuit, leakage match circuit and active chip are sintered in using golden tin solder first
In metal substrate, then by matching capacitance and 100pF electric capacity（As shown in Figure 4）Using conductive adhesive in grid match circuit and leakage
On match circuit, all parts are bonded with the bonding line of diameter 25um finally and are linked together, as shown in Figure 6.
Methods described uses ceramics technique, MMIC techniques, and the operation such as assembly technology realizes having frequency range wide, efficiency high, easily
Use the element manufacturing of the small advantage of, size.
Claims (2)
1. it is a kind of to realize efficient broadband, the internally matched device preparation method of small size low cost, it is characterised in that methods described bag
Include following steps：
1）Grid match circuit and leakage match circuit make：The grid match circuit figure that to design and leakage match circuit figure according to
Ceramics technological process is grown on a ceramic substrate respectively, and laser boring and electroplated ground are carried out to ceramic substrate, forms grid matching
Circuit and leakage match circuit；
2）Matching capacitance makes：Matching capacitance is based on GaAs technique platforms, is produced on GaAs substrate bases, is served as a contrast in GaAs first
Capacitor lower electrode is made in bottom substrate, one layer AlN layers is then grown as medium, then the upper electricity of electric capacity is made on dielectric layer
Pole, bottom electrode is grounded by via, and Top electrode is connected by bonding with microstrip line；
3）Active chip makes：Active chip is made and is based on GaN technique platforms, and active chip is made using 0.25 μm of technique
GaN HEMT devices and stabilizing circuit；
4）Assembling process：Grid match circuit, leakage match circuit and active chip are sintered in metal using golden tin solder first
On substrate, then matching capacitance is adopted using conductive adhesive on grid match circuit and leakage match circuit and by 100pF electric capacity
With conductive adhesive on grid match circuit and leakage match circuit, all parts are bonded with the bonding line of diameter 25um finally and are connected
It is connected together.
2. it is according to claim 1 to realize efficient broadband, the internally matched device preparation method of small size low cost, its feature
It is：The ceramic substrate is Al2O3 Ceramic substrate.
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| CN201510314815.1A CN104900539B (en) | 2015-06-10 | 2015-06-10 | Realize efficient broadband, the internally matched device preparation method of small size low cost |
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| CN201510314815.1A CN104900539B (en) | 2015-06-10 | 2015-06-10 | Realize efficient broadband, the internally matched device preparation method of small size low cost |
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| CN105634416B (en) * | 2015-12-25 | 2018-06-12 | 中国电子科技集团公司第五十五研究所 | A kind of interior mesh power pipe |
| CN112802815B (en) * | 2020-12-29 | 2022-10-11 | 河北博威集成电路有限公司 | GaN microwave power device special for 5G communication and packaging process thereof |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101497422A (en) * | 2009-01-20 | 2009-08-05 | 东南大学 | Low-temperature glass solder bonding and encapsulating method based on disc level glass micro-chamber |
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| JPS5986217A (en) * | 1982-11-09 | 1984-05-18 | Nec Corp | Manufacture of semiconductor device |
| JP2003302299A (en) * | 2002-04-10 | 2003-10-24 | Denso Corp | Manufacturing method for mechanical quantity detector |
| FR2880986B1 (en) * | 2005-01-20 | 2007-03-02 | Commissariat Energie Atomique | METHOD FOR METALLIZING A SEMICONDUCTOR DEVICE |
| DE102010021765B4 (en) * | 2010-05-27 | 2014-06-12 | Semikron Elektronik Gmbh & Co. Kg | Manufacturing method for the arrangement of two connection partners by means of a low-temperature pressure sintered connection |
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| CN101497422A (en) * | 2009-01-20 | 2009-08-05 | 东南大学 | Low-temperature glass solder bonding and encapsulating method based on disc level glass micro-chamber |
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