CN107132726A - A kind of graphic structure and exposure method of sapphire pattern substrate mask plate - Google Patents
A kind of graphic structure and exposure method of sapphire pattern substrate mask plate Download PDFInfo
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- CN107132726A CN107132726A CN201610113391.7A CN201610113391A CN107132726A CN 107132726 A CN107132726 A CN 107132726A CN 201610113391 A CN201610113391 A CN 201610113391A CN 107132726 A CN107132726 A CN 107132726A
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- mask plate
- light tight
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- region
- fan
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/42—Alignment or registration features, e.g. alignment marks on the mask substrates
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/76—Patterning of masks by imaging
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/90—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof prepared by montage processes
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
- G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
- G03F7/2063—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam for the production of exposure masks or reticles
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The present invention provides a kind of graphic structure and exposure method of sapphire pattern substrate mask plate, include the light tight area of transparent area and some places on mask plate, graphic structure is spliced by several identical polygons, polygon has the fan-shaped light tight region of at least two and a transmission region, connecting method is to splice multiple polygonal fan-shaped light tight regions, it is all light tight area to be formed and do not form complete polygonal region on circular light tight area, the border of mask plate.Transmission region is spliced to form by above-mentioned polygon in the present invention, remaining is all light tight region, so splicing ensures that the circular light tight region close to the side will not be disturbed by illumination, when exposing another identical mask plate, only need to mutually it splice with first mask plate side, the pattern exposure of side edge is come out, so as to solve opaque patterns region and mask plate frontier distance too small and cause to expose unsharp problem for this mask plate patterns structure and exposure method.
Description
Technical field
The present invention relates to semiconductor lithography field, more particularly to a kind of figure of PSS mask plates
Structure and exposure method.
Background technology
In LED manufacturing processes, sapphire pattern substrate (Patterned Sapphire
Substrates, hereinafter referred to as PSS) LED inside light absorbs can be reduced and increase lateral light extraction,
And can reduce heating, extend device lifetime, additionally can effectively improve sapphire and gallium nitride
Lattice mismatch issue, therefore PSS technologies are generally used in LED industry at present.By
It is very high to the uniformity requirement of figure in PSS, therefore step photo-etching machine exposure is employed mostly
Light.
The PSS patterns of current main flow are along 60 °, 120 °, 180 ° of array arrangements, as shown in Figure 1.
And step photo-etching machine is generally according to the orthogonal stepping photoetching of X-Y coordinate, so general mask plate
According to rectangular design, chromium is coated with light tight area 01, the light of light source is not through the region,
The as transparent area 02 of mask plate, the light-transmissive transparent area 02 of light source are not coated with place of chromium
Region.Mask plate is rectangle, and four sides are the border of mask plate, it is seen that
The border of mask plate is cut into two by circular light tight area 01.Usually, two it is adjacent
The minimum spacing in circular light tight area 01 is 3 μm, and diameter of a circle is 2 μm to 2.3 μm, existing
There is the distance on the mask plate border and the circular light tight area 01 close to mask plate border of scheme past
It is past that optical approach effect is produced due to too small.
For example, assuming that the cycle in circular light tight area 01 is P, the diameter in circular light tight area 01
For D, the space between the light tight area 01 of adjacent circular is a, then a=P-D.Mask in Fig. 1
The graphical configuration of version to split to a, then mask plate border and circular light tight area 01 it
Between gap there was only a/2.Usually, P=3 μm, D magnitude range is 2 μm~2.3 μm,
Then a/2 magnitude range is 0.35 μm~0.5 μm.And the resolution pole of litho machine is limited toλ is wavelength, generally 365nm, and NA is optical aperture, generally 0.32~0.5,
k1For process factor, usually 0.7 μm, then the light for being commonly used in PSS technologies can be calculated
Quarter, machine resolving range was 0.5 μm~0.8 μm, more than a/2, i.e. mask plate border with it is circular not
The distance between transparent area 01 is too small, is reached using according to Fig. 1 designed masks version in the exposure time
To light distribution during photoresist surface then as shown in Fig. 2 mask plate is placed on XY in Fig. 2
In coordinate system, dark parts are light tight area 01 in figure, and light-colored part is by the saturating of illumination
Light area 02, after testing mask plate boundary light intensity be at the central transparent area 02 of mask plate by
Light intensity 50%, this is optical approach effect.Optical approach effect often results in close cover
The dimension of picture that the circular light tight area 01 on film version border is formed after exposure is uneven or aobvious
Shadow is unclean.
Chinese patent CN102520576B (Application No. CN201110367148.5, publication date
For on June 27th, 2012) attempt to solve the above problems, by mask plate border along PSS
Figure is divided into hexagon fundamental figure, and the PSS figures after combination are as shown in figure 3, circle property
The transmission region in light tight area and border only has a half-size scale of transparent area between circle and circle, obtains
Light distribution as shown in figure 4, after testing mask plate boundary light intensity still only have mask plate center
Locate light intensity 50%, therefore the patent is still without solving the above problems.
Chinese patent CN103365070A (Application No. CN201210089168.5, it is open
Day is on October 23rd, 2013) with the hole cycle staggering of two kinds of outs of phase layer compositions
Arrangement carrys out the mask plate of design configuration substrate, although it can solve two neighboring figure in mask plate
The exposure definition of shape, but be due to that the patent needs to use negative photoresist, correspondingly photoetching
System needs to coordinate negative photoresist to make adjustment, and is added significantly to cost of manufacture.
Chinese patent CN103337566A (Application No. CN CN201310243141.1, it is public
Day is opened on October 2nd, 2013) in part defined using photoetching process in the front of substrate
The area of the pattern of patterned substrate, then in the positive barrier layer of substrate, using stripping work
Skill (lift-off) stripping photoresist, leaves the barrier layer of substrate surface.A photoetching is carried out again
Technique defines the area of the pattern of remaining patterned substrate, then redeposited one layer of resistance on substrate
Barrier, again using the barrier layer on stripping technology (lift-off) stripping photoresist and photoresist,
Wet method or dry etch process are finally used, Sapphire Substrate is performed etching, forms complete
Patterned substrate area of the pattern.Though the patent effectively improves above mentioned problem, this is special
Sharp technique is excessively complicated, and cost is also accordingly improved.
Chinese patent CN103576440A (Application No. CN201310473082.7, it is open
Day be on 2 12nd, 2014) in improve lighttight graphics field be plum blossom-shaped, it is existing
Similarly have in technology and improve to form volcano shape by opaque patterns region, but both change equal
The recovery rate of light can only be improved, do not solve still opaque patterns region and mask plate border away from
Cause the unsharp problem of graph exposure close to border from too small.
In summary, it is necessary to invent a kind of graphic structure and exposure method of PSS mask plates,
On the premise of not increasing process complexity, not increasing cost, it is still able to solve light tight figure
Shape region and mask plate frontier distance are too small and cause the graph exposure close to border unsharp
Problem.
The content of the invention
To solve the above problems, the present invention propose a kind of graphic structure of PSS mask plates and
Exposure method, carries out ameliorative cutting for transmission region on mask plate, easily optics is occurring
On the mask plate side of approach effect, it will be close to the side along the side or cut by the side
The circular light tight region connection cut, it is ensured that the circular light tight region close to the side will not be by
To the interference of illumination, when exposing another identical mask plate, with first mask plate institute shape
Into the side of area of the pattern mutually splice so that the circular arc of mask plate side and area of the pattern side
Circular arc be spliced to form after complete circle, then can be intactly by the circular light tight region of side edge
Exposure comes out, and so neither increases process complexity, does not also increase process costs, while also solving
Opaque patterns of having determined region and mask plate frontier distance are too small and cause the figure close to border
Expose unsharp problem.
To reach above-mentioned purpose, the present invention provides a kind of figure of sapphire pattern substrate mask plate
Structure, including the light tight area of transparent area and some places, the graphic structure is by several identicals
Polygon is spliced, and the polygon has the fan-shaped light tight region of at least two and one thoroughly
Light region, connecting method is to splice multiple polygonal fan-shaped light tight regions,
Circular light tight area is formed, the polygon is zhou duicheng tuxing, polygonal all fans
The radius of shape light tight region correspondence circular arc is equal, and on the polygon corresponding to all circular arcs
Central angle sum be 180 °, do not form complete polygonal on the border of the mask plate
Region is all light tight area.
Preferably, the polygon is pentagon, pentagonal two adjacent interior angles
For right angle, the right-angle side at each right angle is used as the side of the fan-shaped light tight region, the sector
The corresponding central angle of circular arc of light tight region is the right angle, and two right angles have two relatively
Right-angle side, two relative right-angle side length of sides are equal and equal to the fan-shaped light tight area
The radius in domain.
Preferably, the polygon is equilateral triangle, in three of the equilateral triangle
The fan-shaped light tight region that central angle is 60 ° is formed at angle.
Preferably, the diameter range in the circular light tight area is 2 μm~2.3 μm.
Preferably, circle of the circumference in the circular light tight area by the fan-shaped light tight region
Arc is spliced, the circular arc on circular arc and relative side on any one side of the mask plate
It is spliced to form complete circle.
Preferably, after mask plate border described in two identicals is overlapped, being covered described in two
On the adjacent side of film version, circular arc splices with the circular arc on another mask plate on a mask plate
Form complete circle.
The present invention also provides a kind of using with sapphire pattern substrate mask plate as described above
Graphic structure mask plate exposure method, the pattern formed after the mask plate has been exposed
On region, the border of the mask plate is overlapped with area of the pattern border so that mask plate side
The circular arc of circular arc and area of the pattern side be spliced to form after complete circle, expose the mask plate
On figure.
Compared with prior art, the beneficial effects of the invention are as follows：The present invention provides a kind of PSS
The graphic structure of mask plate, including the light tight area of transparent area and some places, the graphic structure by
Several identical polygons are spliced, and the polygon has at least two sector light tight
Region and a transmission region, connecting method are that multiple polygonal sectors are impermeable
Light region is spliced, and forms circular light tight area, the polygon is zhou duicheng tuxing, described many
The radius of all fan-shaped light tight region correspondence circular arcs of side shape is equal, and institute on the polygon
It is not form complete on 180 °, the border of mask plate to have the central angle sum corresponding to circular arc
Polygonal region is all light tight area.The present invention carries out ameliorative cutting for mask plate, covers
Film version is spliced to form by polygon, and each polygon is by least two fan-shaped light tight regions and one
Individual transmission region, then according to this joining method, multiple polygonal fan-shaped light tight regions
Splicing, forms circular light tight area, on the mask plate side for optical approach effect easily occur,
Because the transmission region between the circular light tight region of the side and side is not enough to spell
A complete polygon is gathered into, therefore will be close to the side or the circle cut by the side
Light tight region is connected to form irregular light tight region with side, ensures first close to the side
The circular light tight region on side will not be disturbed by illumination, and in exposure, exposure completes one
After mask plate formation area of the pattern, another identical mask plate is exposed, by mask plate and pattern
The border in region is overlapped, until both sides are spliced to form after a complete circle, then can
Intactly the circular light tight region of side edge is exposed out, so simply to transmission region and
Transmission region carries out geometry segmentation and then spliced, and without changing step of exposure, joins without changing
Number, therefore neither increase process complexity, also do not increase process costs, while also solving not
Transparent figure region and mask plate frontier distance it is too small and cause close to border graph exposure not
Clear the problem of.
Brief description of the drawings
Fig. 1 is the graphic structure schematic diagram of PSS mask plates in the prior art；
Fig. 2 is intensity of illumination distribution map when being exposed using Fig. 1 mask plate；
Fig. 3 is divided into hexagon parent map for transmission region in the prior art along PSS figures
The mask plate of shape；
Fig. 4 is intensity of illumination distribution map when being exposed using Fig. 3 mask plate；
Fig. 5 splits schematic diagram for the transmission region of embodiment one that the present invention is provided；
The unit polygon that Fig. 6 is divided into for the transmission region of embodiment one that the present invention is provided
Schematic diagram；
The graphic structure schematic diagram for the PSS mask plates of embodiment one that Fig. 7 provides for the present invention；
Fig. 8 is intensity of illumination distribution map when being exposed using Fig. 7 mask plate；
Signals of the Fig. 9 for the embodiment one of the invention provided by two mask plate borders after overlapping
Figure；
The unit polygon that Figure 10 is divided into for the transmission region of embodiment two that the present invention is provided
Schematic diagram；
Figure 11 splits schematic diagram for the transmission region of embodiment two that the present invention is provided.
Prior art illustration：The light tight areas of 01-, 02- transparent areas；
Present invention diagram：The light tight areas of 1-, 2- transparent areas, 3- first modules triangle, 4-
Two elementary triangles, 5- third units polygon, the unit polygons of 6- the 4th, 7- have circular arc
Light tight area, the cut-off rules of 81- first, the cut-off rules of 82- second, the cut-off rules of 83- the 3rd.
Embodiment
In order to facilitate the understanding of the purposes, features and advantages of the present invention, tie below
Accompanying drawing is closed to be described in detail the embodiment of the present invention.
Embodiment one
The present invention provides a kind of graphic structure of PSS mask plates, including light tight area 1 of some places
With transparent area 2, the thinking of segmentation transparent area 2 is as follows in the present embodiment：
Fig. 5 is refer to, usually, light tight area 1 is all circular, circular and circle on mask plate
It is transparent area 2 between shape, the distance between all circles are equal, and all circular radius are identical,
The center of circle in the adjacent light tight area 1 of three circles is connected, then obtained such as first module in Fig. 5
In triangle 3 and second unit triangle 4, reflection to Fig. 6, the He of first module triangle 3
Second unit triangle 4 becomes equilateral triangle, first module triangle 3 and second unit
Triangle 4 has three straight lines and three arc-shaped edges, and these three arc-shaped edges are above-mentioned adjacent
Three circular peripheries on a part, and the corresponding central angle of these three circular arcs is equilateral triangle
The interior angle of shape is all 60 °, and the central angle sum corresponding to three circular arcs is equilateral triangle
180 ° of interior angle sum.
Spelled according to the transmission region in above-mentioned first module triangle 3 and second unit triangle 4
The transparent area 2 to form mask plate is connect, then is occurred in that on two sides and is not enough to form complete
The situation of first module triangle 3 or second unit triangle 4, in this case, nothing
Method forms complete first module polygon 3 and second unit polygon 4, then will be close to border
Place is all processed as light tight area 1, refer to Fig. 7, along above-mentioned two side, will be close to
The circular light tight area 1 of above-mentioned two side is interconnected to form the light tight area 7 with circular arc,
So in exposure, causing can not close to the light tight area 7 with circular arc of above-mentioned two side
Form intactly circular, intensity of illumination distribution when it exposes is as shown in Figure 8.
The present invention also provides a kind of mask plate of the graphic structure using above-mentioned PSS mask plates
Exposure method, refer to Fig. 9, after the completion of a mask plate exposure, by another identical
The border of mask plate and the mask plate is exposed after overlapping, or is using a upper mask plate
On the pattern formed after exposure, after border and the border of the pattern are overlapped with another mask plate
It is exposed.In exposure, it is necessary to which the light tight area 7 with circular arc is covered, until
Circular arc on two sides is mutually spliced to form complete circle.Fig. 9 is refer to, at another
When mask plate covers the light tight area 7 with circular arc of the mask plate, on another mask plate
Light tight area 7 with circular arc can block part illumination in exposure, but due to before in exposure
During first mask plate, capped part had been exposed, thus even in expose another
Transparent area 2 is covered by the light tight area 7 with circular arc on its border during mask plate, also will not shadow
Ring the formation of pattern on the two mask plates.
It is preferred that the circular diameter range in light tight area 1 is 2 μm~2.3 μm.
Embodiment two
Figure 11 is refer to, the first cut-off rule 81 is that the center of circle is connected with the center of circle, the present embodiment and reality
The difference for applying example one is that the cut-off rule of transparent area 2 is the second cut-off rule 82 or the 3rd segmentation
Line 83, the second cut-off rule 82 and the 3rd cut-off rule 83 and the angle of the first cut-off rule 81 formation
Scope is 38 °~42 °.
Such as, transparent area 2 forms the 3rd such as Figure 10 after splitting according to the 3rd cut-off rule 83
The unit polygon 6 of unit polygon 5 and the 4th, the unit of third unit polygon 5 and the 4th is more
Side shape 6 is made up of five straight lines, has two adjacent right angles, two in each polygon
Adjacent right angle correspondence central angle is 90 ° of circular arc, forms two quadrants, this
Two quadrants are light tight area, and two arc angle sums are 180 °, above-mentioned two
Adjacent right angle has two relative right-angle sides, and the length of side of the two relative right-angle sides is four
The radius of/mono- circle, it is polygon according to the above-mentioned transparent area of third unit polygon 5 and Unit the 4th
The transparent area of shape 6 is spliced to form the transparent area 2 of whole mask plate, and remaining is all light tight area 1,
Can so ensure will not be by border in the circular light tight area 1 of the boundary close to mask plate
The illumination interference at place, and by the way that two mask plate borders are overlapped into post-exposure, or using upper
On the pattern formed after the exposure of one mask plate, with another mask plate by border and the pattern
Be exposed after border is overlapping so that the pattern in the circular light tight area 1 of boundary intactly by
Exposure stamp is got off.
The present invention simply carries out geometry segmentation and then spliced to transmission region, if close to side
Complete pentagon or equilateral triangle can not be formed between circular light tight area 1 and side
Transparent area 2, then just being connected close to the light tight area 7 with circular arc of side with side
Form irregular light tight area 1, it is ensured that the circular light tight area 1 close to side will not be by
Illumination is disturbed, then when exposing another mask plate, it is exposed with first mask plate
Figure enter row bound and overlap, then can complete close to the circular light tight area 1 of mask plate side
Exposure, this method need not change step of exposure, without change parameter, therefore neither increase
Process complexity, does not also increase process costs, while also solving opaque patterns region with covering
Film version frontier distance is too small and causes the unsharp problem of graph exposure close to border.
Above-described embodiment is described the present invention, but the present invention is not limited only to above-described embodiment,
Obvious those skilled in the art can carry out various changes and modification without departing from this to invention
The spirit and scope of invention.So, if these modifications and variations of the present invention belong to the present invention
Within the scope of claim and its equivalent technologies, then the present invention be also intended to include these change and
Including modification.
Claims (7)
1. a kind of graphic structure of sapphire pattern substrate mask plate, including transparent area and some places
Light tight area, it is characterised in that the graphic structure by several identical polygons splice and
Into the polygon has the fan-shaped light tight region of at least two and a transmission region, splicing
Mode is to splice multiple polygonal fan-shaped light tight regions, forms circular impermeable
Light area, the polygon is zhou duicheng tuxing, polygonal all fan-shaped light tight regions
The radius of correspondence circular arc is equal, and the central angle sum on the polygon corresponding to all circular arcs
For 180 °, it is all impermeable not form complete polygonal region on the border of the mask plate
Light area.
2. the graphic structure of sapphire pattern substrate mask plate as claimed in claim 1, it is special
Levy and be, the polygon is pentagon, pentagonal two adjacent interior angles are right angle,
The right-angle side at each right angle is used as the side of the fan-shaped light tight region, the fan-shaped light tight area
The corresponding central angle of circular arc in domain is the right angle, and two right angles have two relative right-angle sides,
Two relative right-angle side length of sides are equal and are equal to the radius of the fan-shaped light tight region.
3. the graphic structure of sapphire pattern substrate mask plate as claimed in claim 1, it is special
Levy and be, the polygon is shape at equilateral triangle, three interior angles of the equilateral triangle
Into the fan-shaped light tight region that central angle is 60 °.
4. the graphic structure of sapphire pattern substrate mask plate as claimed in claim 1, it is special
Levy and be, the diameter range in the circular light tight area is 2 μm~2.3 μm.
5. the graphic structure of sapphire pattern substrate mask plate as claimed in claim 1, it is special
Levy and be, the circumference in the circular light tight area is spliced by the circular arc of the fan-shaped light tight region
Form, the circular arc splicing shape on the circular arc and relative side on any one side of the mask plate
Into complete circle.
6. the graphic structure of sapphire pattern substrate mask plate as claimed in claim 5, it is special
Levy and be, after mask plate border described in two identicals is overlapped, in two mask plate phases
On adjacent side, circular arc has been spliced to form with the circular arc on another mask plate on a mask plate
Whole circle.
7. it is a kind of using with the sapphire pattern substrate described in any one in claim 1~6
The exposure method of the mask plate of the graphic structure of mask plate, it is characterised in that described having exposed
On the area of the pattern formed after mask plate, the border of the mask plate and area of the pattern border are handed over
It is folded so that the circular arc of mask plate side is spliced to form complete circle with the circular arc of area of the pattern side
Afterwards, the figure on the mask plate is exposed.
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610113391.7A CN107132726B (en) | 2016-02-29 | 2016-02-29 | A kind of graphic structure and exposure method of sapphire pattern substrate mask plate |
| SG11201807220XA SG11201807220XA (en) | 2016-02-29 | 2017-02-27 | Pattern structure and exposure method of patterned sapphire substrate mask |
| US16/080,396 US10747100B2 (en) | 2016-02-29 | 2017-02-27 | Pattern structure and exposure method of patterned sapphire substrate mask |
| KR1020187027628A KR102094930B1 (en) | 2016-02-29 | 2017-02-27 | Pattern structure and exposure method of patterned sapphire substrate mask |
| JP2018544523A JP6577149B2 (en) | 2016-02-29 | 2017-02-27 | Pattern structure of patterned sapphire substrate mask and exposure method |
| PCT/CN2017/075010 WO2017148350A1 (en) | 2016-02-29 | 2017-02-27 | Pattern structure and exposure method of patterned sapphire substrate mask |
| TW106106718A TWI627496B (en) | 2016-02-29 | 2017-03-01 | Graphic structure and exposure method of patterned sapphire substrate mask |
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| CN201610113391.7A CN107132726B (en) | 2016-02-29 | 2016-02-29 | A kind of graphic structure and exposure method of sapphire pattern substrate mask plate |
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| CN107132726A true CN107132726A (en) | 2017-09-05 |
| CN107132726B CN107132726B (en) | 2019-11-26 |
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| CN201610113391.7A Active CN107132726B (en) | 2016-02-29 | 2016-02-29 | A kind of graphic structure and exposure method of sapphire pattern substrate mask plate |
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| Country | Link |
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| US (1) | US10747100B2 (en) |
| JP (1) | JP6577149B2 (en) |
| KR (1) | KR102094930B1 (en) |
| CN (1) | CN107132726B (en) |
| SG (1) | SG11201807220XA (en) |
| TW (1) | TWI627496B (en) |
| WO (1) | WO2017148350A1 (en) |
Cited By (6)
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| CN108520121A (en) * | 2018-03-27 | 2018-09-11 | 信利半导体有限公司 | Lattice generation method and device and computer installation and readable storage medium storing program for executing |
| CN109491218A (en) * | 2018-12-29 | 2019-03-19 | 成都中电熊猫显示科技有限公司 | Reduce the method and device of exposure figure stitching portion color difference |
| CN111381434A (en) * | 2018-12-28 | 2020-07-07 | 上海微电子装备（集团）股份有限公司 | Mask plate and exposure method |
| CN111961766A (en) * | 2020-07-02 | 2020-11-20 | Ummily集团股份有限公司 | Splicing unit, splicing structure and leather product manufacturing method |
| CN113033723A (en) * | 2021-03-08 | 2021-06-25 | 山东大学 | Annular mask, light field regulation and control method, single-pixel imaging method and system |
| CN114779569A (en) * | 2022-03-10 | 2022-07-22 | 威科赛乐微电子股份有限公司 | Photoetching plate and application and chip thereof |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| JP6940757B2 (en) * | 2017-06-30 | 2021-09-29 | 日亜化学工業株式会社 | Manufacturing method of patterned substrate and manufacturing method of semiconductor device |
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Also Published As
| Publication number | Publication date |
|---|---|
| JP2019511005A (en) | 2019-04-18 |
| SG11201807220XA (en) | 2018-09-27 |
| US10747100B2 (en) | 2020-08-18 |
| KR20180118706A (en) | 2018-10-31 |
| JP6577149B2 (en) | 2019-09-18 |
| US20190339611A1 (en) | 2019-11-07 |
| TW201741763A (en) | 2017-12-01 |
| KR102094930B1 (en) | 2020-03-30 |
| WO2017148350A1 (en) | 2017-09-08 |
| CN107132726B (en) | 2019-11-26 |
| TWI627496B (en) | 2018-06-21 |
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