CN107129139A - A kind of metal semiconductor glass photoelectric fiber-optical and preparation method thereof - Google Patents
A kind of metal semiconductor glass photoelectric fiber-optical and preparation method thereof Download PDFInfo
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- CN107129139A CN107129139A CN201710273099.6A CN201710273099A CN107129139A CN 107129139 A CN107129139 A CN 107129139A CN 201710273099 A CN201710273099 A CN 201710273099A CN 107129139 A CN107129139 A CN 107129139A
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- tellurjum
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B37/00—Manufacture or treatment of flakes, fibres, or filaments from softened glass, minerals, or slags
- C03B37/01—Manufacture of glass fibres or filaments
- C03B37/012—Manufacture of preforms for drawing fibres or filaments
- C03B37/01205—Manufacture of preforms for drawing fibres or filaments starting from tubes, rods, fibres or filaments
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B37/00—Manufacture or treatment of flakes, fibres, or filaments from softened glass, minerals, or slags
- C03B37/01—Manufacture of glass fibres or filaments
- C03B37/02—Manufacture of glass fibres or filaments by drawing or extruding, e.g. direct drawing of molten glass from nozzles; Cooling fins therefor
- C03B37/025—Manufacture of glass fibres or filaments by drawing or extruding, e.g. direct drawing of molten glass from nozzles; Cooling fins therefor from reheated softened tubes, rods, fibres or filaments, e.g. drawing fibres from preforms
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B37/00—Manufacture or treatment of flakes, fibres, or filaments from softened glass, minerals, or slags
- C03B37/10—Non-chemical treatment
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B2203/00—Fibre product details, e.g. structure, shape
- C03B2203/10—Internal structure or shape details
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- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Life Sciences & Earth Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Optical Couplings Of Light Guides (AREA)
- Surface Treatment Of Glass Fibres Or Filaments (AREA)
Abstract
The invention discloses a kind of metal semiconductor glass photoelectric fiber-optical and preparation method thereof.The photoelectric fiber-optical includes covering（2）, fibre core（3）With metal aluminum steel（1）；The covering（2）For phosphate glass；The fibre core（3）On the axial line of optical fiber, fibre core（3）For the selen-tellurjum semiconductor spheres being spaced apart；In fibre core（3）Both sides have with fibre core（3）Two symmetrical metal aluminum steels are carried out for symmetry axis（1）；The metal aluminum steel（1）With fibre core（3）It is parallel along the axis direction of optical fiber, and metal aluminum steel（1）With fibre core（3）In selen-tellurjum semiconductor spheres directly contact composition electrical circuit.This method is by the preparation and wire drawing of preform, then is thermally treated resulting in photoelectric fiber-optical.Photoelectric fiber-optical of the present invention is integrated with the high photoconductive property of selen-tellurjum semiconductor and the conductivity of metallic aluminium, and the curent change under dark and illumination can adjust the change of photoelectric current up to more than 2 orders of magnitude by adjusting the component of selen-tellurjum.
Description
Technical field
The present invention relates to the preparation field of optical fiber, and in particular to a kind of metal-semiconductor-glass photoelectric fiber-optical and its preparation
Method.
Background technology
2004, American scientist Fink et al. (M.Bayindir, F.Sorin, A.F.Abourady, et al.,
Nature,2004,431(7010):826-829.) daraf(reciprocal of farad) prepares metal-semiconductor-Polymer Optoelectronic to first passage low temperature altogether
Optical fiber, this new composite material fiber is by the metallic tin (Sn) of low melting point, unbodied sulfide semiconductor (As-Se-
Te-Sn or As2Se3) and polymer (PEI or PES) constitute, be integrated with semiconductor abundant electricity, photoelectric properties, metal
The pliability of conductivity and optical fiber, stitchability is expected to be applied to the fields such as smart fabric, photodetection and TEMP.
2006, American scientist Badding and British scientist Sazio et al. were by high-pressure chemical vapor deposition method in micro-structural light
Selective deposition semiconductor prepares composite material fiber in airport in fibre, and semiconductor is introduced into silica fibre first, can
Develop the integrated opto-electronic device of a series of optical fiber (P.J.A.Sazio, A.Amezcua-Correa, C.E.Finlayson,
et al.,Science,2006,311(5767):1583-1586.).2008, American scientist Ballato et al. passed through fibre
Semi-conducting material is incorporated into quartz glass optical fiber by core fusion method, and it is unrestricted to prepare length using commercial wire-drawer-tower
Semiconductor fibre core composite material fiber (J.Ballato, T.Hawkins, P.Foy, et al., Opt.Express, 2008,16
(23):18675-18683.).Then, the research of composite material fiber causes the extensive concern of researcher.
At home, this seminar is prepared for phosphate glass covering selen-tellurjum semiconductor fibre core composite wood by fibre core fusion method
Expect optical fiber, and can realize that semiconductor fibre core component and photoelectric current are adjustable.In addition, being also successfully prepared a series of germanate glass
Glass layer semiconductor package fibre core composite material fiber.However, the photoelectric fiber-optical of real integrated metal-semiconductor-insulator and few,
And metal and semiconductor are in contact during optical fiber hot-drawn, the element meeting phase counterdiffusion of metal and semiconductor, so that greatly
The big performance for reducing semiconductor.2016, Fink et al. was successfully prepared conductor-semiconductor-insulator of scattered translational symmetry
Body photoelectric fiber-optical, initial fiber includes the discontiguous continuous component in three parallel inside：Semiconductor, conducting polymer and poly-
Compound covering (M.Rein, E.Levy, A.Gumennik, et al., Nat.Commun., 2016,7:12807.).Pass through essence again
Thin heat treatment, continuous semiconducting glass is gathered due to the conduction that rayleigh-taylor instability is transformed into semiconductor spheres and both sides
Compound directly contacts composition electrical circuit, it is achieved thereby that photoelectric fiber-optical truly.But, the wire drawing temperature of polymer
Degree is relatively low, and the conductor and semi-conducting material matched with it is limited.Then, the problem is prepared for platinum-germanium semiconductor-quartz
Glass photoelectric fiber-optical, the Pt metals linear contact lay for causing continuous Ge fibre cores balling-up and both sides by heat treatment constitutes electrical circuit
(L.Wei,C.Hou,E.Levy,et al.,Adv.Mater.2017,29:1603033.).However, this photoelectric fiber-optical is in dark
Under the conditions of and illumination under, its curent change less, the sensitivity of photodetection may be limited.
It is well known that selen-tellurjum semiconductor has abundant photoelectric properties such as photoconductive property, high is non-linear, in 2~12 μ
M has the research before high through performance, this seminar to find that the physical and chemical performance of phosphate glass and selen-tellurjum semiconductor matches,
Phosphate glass and selen-tellurjum semiconductor can be drawn to constitute compound-glass optical fiber altogether, its photoelectric current can be adjustable according to the component of selen-tellurjum, black
Curent change under dark lower and illumination up to two orders of magnitude more than.But, work before does not have integrating metal electrodes and arrived
In optical fiber, optical fiber can only be conductive by semiconductor, and electrical efficiency is low, can not turn into photoelectric fiber-optical truly.
The content of the invention
In order to overcome the disadvantages mentioned above and deficiency of prior art, it is an object of the invention to provide a kind of metal-semiconductor-
Glass photoelectric fiber-optical, specially a kind of metallic aluminium-selen-tellurjum semiconductor-phosphate glass photoelectric fiber-optical, the photoelectric fiber-optical can be simultaneously
Electrical conduction and light conduction are realized, the curent change under dark and illumination condition reaches more than 2 orders of magnitude.
Another object of the present invention is to provide a kind of preparation method of described metal-semiconductor-glass photoelectric fiber-optical,
This method is thermally treated resulting in photoelectric fiber-optical by the preparation and wire drawing of preform, then by fine.
The purpose of the present invention is achieved through the following technical solutions.
A kind of metal-semiconductor-glass photoelectric fiber-optical, including glass-clad, semiconductor fibre core and metal electrode；The bag
Layer is phosphate glass；The fibre core is on the axial line of optical fiber, and fibre core is the selen-tellurjum semiconductor spheres being spaced apart；In fibre core two
Side, which has, carries out two symmetrical metal aluminum steels by symmetry axis of fibre core；The metal aluminum steel and axle center of the fibre core along optical fiber
Direction is parallel, and metal aluminum steel directly contacts composition electrical circuit with the selen-tellurjum semiconductor spheres in fibre core.
Further, in the selen-tellurjum semiconductor spheres, the mass ratio of selenium element and tellurium element is 1~9:1.
Further, selen-tellurjum semiconductor spheres and the diameter ratio of optical fiber are 1:5~20.
Further, the diameter of metal aluminum steel and the diameter ratio of selen-tellurjum semiconductor spheres are 1~3:1.
The method for preparing a kind of described metal-semiconductor-glass photoelectric fiber-optical, comprises the following steps：
(1) preparation of preform：Phosphate glass is processed into cylinder, at the axial line Shang Zuan centers of cylinder
Hole, then drilled in the both sides of centre bore；The size of two side openings is identical, and is symmetrically divided using centre bore as symmetry axis
Cloth, all holes are all nonpenerative；The selen-tellurjum semiconductor powder prepared is inserted into centre bore, metal aluminium bar is inserted into two sides
The openend of hole, center seal hole and side opening, obtains preform；
(2) fibre-optical drawing：The preform assembled is put into wire drawing in fiber drawing furnace, initial fiber is obtained；
(3) optical fiber is heat-treated：The initial fiber that wire drawing is obtained is heat-treated, and obtains described metal-semiconductor-glass
Glass photoelectric fiber-optical.
Further, in step (1), the line of the hole heart of the Kong Xinyu centre bores of two side openings is straight line.
Further, in step (1), the sealing is sealed using fire clay.
Further, in step (2), the temperature of the wire drawing is 680~750 DEG C.
Further, in step (2), drawing process is carried out under argon atmosphere.
Further, in step (2), in the initial fiber, fibre core be continuous selen-tellurjum semiconductor group into cylindrical core,
On the axial line of initial fiber；Metal aluminum steel carried out in the both sides of fibre core, by symmetry axis of fibre core it is symmetrical, and along light
Fine axis direction is parallel, and is not directly contacted with fibre core；Metallic aluminium do not contact directly with selen-tellurjum semiconductor, it is to avoid wire drawing
During metallic aluminium and selen-tellurjum semiconductor element phase counterdiffusion, so as to ensure that the excellent properties of semiconductor in optical fiber.
Further, in step (3), the temperature of heat treatment is set according to the rayleigh-taylor instability principle of fluid
It is fixed；The temperature of heat treatment is less than selen-tellurjum semiconductor higher than the fusing point of selen-tellurjum semiconductor and the softening temperature of phosphate glass
The wire-drawing temperature of boiling point, the fusing point of metallic aluminium and optical fiber.
Further, in step (3), the temperature of the heat treatment is 500~660 DEG C.
Further, in step (3), the time of the heat treatment is 0.5~3min.
Further, in step (3), the continuous selen-tellurjum semiconductor transition after heat treatment is partly led for larger-diameter selen-tellurjum
Body ball, the diameter of ball is more than the diameter in fibre core hole, is directly contacted with the metal aluminum steel of both sides, constitutes electrical circuit.
Compared with prior art, the present invention has following significant beneficial effect：
(1) existing metal-semiconductor-insulator photoelectric fiber-optical, covering is polymer or quartz glass, and wire drawing temperature
Spend low (being less than 400 DEG C) or too high (1950~2050 DEG C), it is impossible to integrated selen-tellurjum semiconductor；And it is of the invention by selen-tellurjum semiconductor
It is integrated in metallic aluminium in phosphate glass optical fiber, constitutes photoelectric fiber-optical；
(2) before heat treatment, metallic aluminium independence parallel with selen-tellurjum semiconductor does not contact with each other photoelectric fiber-optical of the invention,
And after being heat-treated, continuous selen-tellurjum semiconductor core is transformed into spheroid, diameter becomes big, is contacted with each other composition with the metal aluminum steel of both sides
Electrical circuit, so that the phase counterdiffusion of metallic aluminium and selen-tellurjum semiconductor element in drawing process is avoided, so as to ensure that in optical fiber
The excellent properties of semiconductor；
(3) photoelectric fiber-optical of the invention is integrated with the high photoconductive property of selen-tellurjum semiconductor and the conductivity of metallic aluminium,
Curent change under dark and illumination reaches more than 2 orders of magnitude, and can adjust photoelectric current by adjusting the component of selen-tellurjum
Change；
(4) photoelectric fiber-optical of the invention can produce larger photoelectric current under illumination condition, be expected to set in wearable electronic
Standby, photodetection, sensing, imaging and medical diagnosis technology, and the field such as photodetection are applied.
Brief description of the drawings
Fig. 1 is the schematic diagram of the prefabricated rods of metal-semiconductor-glass photoelectric fiber-optical in embodiment 1；
Fig. 2 is the end view of the prefabricated rods of metal-semiconductor-glass photoelectric fiber-optical in embodiment 1；
Fig. 3 be embodiment 1 in be heat-treated after metal-semiconductor-glass photoelectric fiber-optical schematic diagram.
Embodiment
With reference to embodiment, the present invention is described in more detail, but the implementation of the present invention is not limited to this, for
Not specified technological parameter, can refer to routine techniques progress.
Embodiment 1
The preparation process of the metallic aluminium of the present embodiment-selen-tellurjum semiconductor-phosphate glass photoelectric fiber-optical is as follows：
(1) phosphate glass is cold worked into diameter 25mm, long 10cm cladding glasses rod by machinery, then in cladding glass
Rod center drill straight footpath 3mm, long 8cm centre bore vertically；Again on the same line distance center hole 1mm two sidetracking two with
The side opening of the identical size of centre bore, all holes are non-through hole, and two side openings are carried out symmetrically by symmetry axis of centre bore
Distribution, the line of the hole heart of the Kong Xinyu centre bores of two side openings is straight line；Finally hole inwall and glass bar outer surface are carried out
Physics and chemical polishing；
(2) in glove box, high-purity selenium, tellurium semiconductor powder are mixed by the mol ratio of table 1, in being tightly packed within
In heart hole；High-purity, a diameter of 3mm metal aluminum steel is filled into two side openings；By the upper end fire resisting of cladding glass rod
Mud good seal, obtains preform；
The schematic diagram of obtained preform as depicted in figs. 1 and 2, is filled with end view difference in centre bore
There is selen-tellurjum Semiconductor Powder, form selen-tellurjum semiconductor cylinder fibre core 3；High pure metal is filled with two size identical side openings
Aluminum steel 1；Fibre core 3 is on the axial line of covering 2, and two metal aluminum steels 1 in side opening are carried out symmetrically by symmetry axis of centre bore
Distribution, the line of the hole heart of the Kong Xinyu centre bores of two side openings is straight line；Metal aluminum steel 1 and fibre core 3 are along the axle center side of optical fiber
To parallel, and it is not directly contacted with fibre core 3.
(3) preform assembled is placed on fiber drawing furnace wire drawing, wire-drawing temperature is 680 DEG C, and drawing process leads to argon gas
Protection, obtains initial fiber；
(4) obtained initial fiber is heat-treated；According to the rayleigh-taylor instability principle of fluid, optical fiber heat
The temperature of processing is higher than the fusing point of selen-tellurjum semiconductor, and less than its boiling point, while being higher than the softening of phosphate cladding glass
Temperature (500 DEG C), less than the fusing point (660 DEG C) and the wire-drawing temperature (680 DEG C) of optical fiber of metallic aluminium.The condition of heat treatment presses table 1
Described, continuous selen-tellurjum semiconductor transition directly contacts structure into larger-diameter spheroid with the metal aluminum steel of both sides after heat treatment
Into electrical circuit.
The metal-semiconductor prepared-glass photoelectric fiber-optical is as shown in figure 3, including covering 2, fibre core 3 and metal aluminum steel
1；Fibre core 3 is on the axial line of optical fiber, and fibre core 3 is the selen-tellurjum semiconductor spheres being spaced apart；Have in the both sides of fibre core 3 with fibre core 3
Two symmetrical metal aluminum steels 1 are carried out for symmetry axis；Metal aluminum steel 1 is parallel along the axis direction of optical fiber with fibre core 3, and gold
Category aluminum steel 1 directly contacts composition electrical circuit with the selen-tellurjum semiconductor spheres in fibre core 3.
The selen-tellurjum semiconductor component and its heat treatment, photoelectricity of metal-semiconductor manufactured in the present embodiment-glass photoelectric fiber-optical
(illumination condition is to use 200mW/cm to stream situation of change2808nm HeNe laser illuminations) as shown in table 1.
The selen-tellurjum semiconductor component of table 1 and its heat treatment, photocurrent variations situation
As shown in Table 1, the fibre core of different selen-tellurjum semiconductor components can be become by being heat-treated from continuous cylinder
Semiconductor spheres, and be in contact with the metal aluminum steel of both sides, electrical circuit is constituted, in 200mW/cm2808nm HeNe lasers shine
Photoelectric current can be detected by penetrating down.Also, the changing value of photoelectric current is related to the component of selen-tellurjum semiconductor.Containing Se0.8Te0.2
Semiconductor spheres metal-semiconductor-glass photoelectric fiber-optical in detect photocurrent variations value more than 100 times.
Above-described embodiment is preferably embodiment, but embodiments of the present invention are not by above-described embodiment of the invention
Limitation, other any Spirit Essences without departing from the present invention and the change made under principle, modification, replacement, combine, simplification,
Equivalent substitute mode is should be, is included within protection scope of the present invention.
Claims (9)
1. a kind of metal-semiconductor-glass photoelectric fiber-optical, it is characterised in that including glass-clad（2）, fibre core（3）And metallic aluminium
Line（1）；The glass-clad（2）For phosphate glass；The fibre core（3）On the axial line of optical fiber, fibre core（3）For interval point
The selen-tellurjum semiconductor spheres of cloth；In fibre core（3）Both sides have with fibre core（3）Two symmetrical metal aluminum steels are carried out for symmetry axis
（1）；The metal aluminum steel（1）With fibre core（3）It is parallel along the axis direction of optical fiber, and metal aluminum steel（1）With fibre core（3）In selenium
Tellurium semiconductor spheres directly contact composition electrical circuit.
2. a kind of metal-semiconductor-glass photoelectric fiber-optical according to claim 1, it is characterised in that the selen-tellurjum is partly led
In body ball, the mass ratio of selenium element and tellurium element is 1 ~ 9:1；Selen-tellurjum semiconductor spheres and the diameter ratio of optical fiber are 1:5~20；Gold
It is 1 ~ 3 to belong to the diameter of aluminum steel with the diameter ratio of selen-tellurjum semiconductor spheres:1.
3. prepare a kind of method of metal-semiconductor-glass photoelectric fiber-optical described in claim 1 or 2, it is characterised in that bag
Include following steps：
（1）The preparation of preform：Phosphate glass is processed into cylinder, the drill centers on the axial line of cylinder,
Drilled again in the both sides of centre bore；The size of two side openings is identical, and symmetrical, the institute of progress by symmetry axis of centre bore
Some holes are non-through hole；The selen-tellurjum semiconductor powder prepared is inserted into centre bore, metal aluminium bar is inserted into two side openings, it is close
The openend of centre bore and side opening is sealed, preform is obtained；
（2）Fibre-optical drawing：The preform assembled is put into wire drawing in fiber drawing furnace, initial fiber is obtained；
（3）Optical fiber is heat-treated：The initial fiber that wire drawing is obtained is heat-treated, and obtains described metal-semiconductor-glass light
Electric light is fine.
4. a kind of preparation method of metal-semiconductor-glass photoelectric fiber-optical according to claim 3, it is characterised in that step
Suddenly（1）In, the line of the hole heart of the Kong Xinyu centre bores of two side openings is straight line；The sealing is sealed using fire clay.
5. a kind of preparation method of metal-semiconductor-glass photoelectric fiber-optical according to claim 3, it is characterised in that step
Suddenly（2）In, the temperature of the wire drawing is 680 ~ 750 DEG C, and drawing process is carried out under argon atmosphere.
6. a kind of preparation method of metal-semiconductor-glass photoelectric fiber-optical according to claim 3, it is characterised in that step
Suddenly（2）In, in the initial fiber, fibre core be continuous selen-tellurjum semiconductor group into cylindrical core, positioned at the axle center of initial fiber
On line；Metal aluminum steel is in the both sides of fibre core, and by symmetry axis of fibre core, progress is symmetrical, and the axis direction with fibre core along optical fiber is put down
OK, and with fibre core it is not directly contacted with.
7. a kind of preparation method of metal-semiconductor-glass photoelectric fiber-optical according to claim 3, it is characterised in that step
Suddenly（3）In, the temperature of the heat treatment is less than selen-tellurjum higher than the fusing point of selen-tellurjum semiconductor and the softening temperature of phosphate glass
The wire-drawing temperature of the boiling point of semiconductor, the fusing point of metallic aluminium and optical fiber.
8. a kind of preparation method of metal-semiconductor-glass photoelectric fiber-optical according to claim 3, it is characterised in that step
Suddenly（3）In, the temperature of the heat treatment is 500 ~ 660 DEG C；The time of the heat treatment is 0.5 ~ 3 min.
9. a kind of preparation method of metal-semiconductor-glass photoelectric fiber-optical according to claim 3, it is characterised in that step
Suddenly（3）In, the continuous selen-tellurjum semiconductor transition after heat treatment is larger-diameter selen-tellurjum semiconductor spheres, the metallic aluminium with both sides
Line is directly contacted.
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109813349A (en) * | 2019-02-27 | 2019-05-28 | 华南理工大学 | A kind of composite optical fiber device and preparation and application detecting light, electricity and chemical signal |
| CN109887676A (en) * | 2019-02-27 | 2019-06-14 | 华南理工大学 | A kind of photoelectricity combination electrode optical fiber and the preparation method and application thereof |
| CN110228790A (en) * | 2019-05-23 | 2019-09-13 | 华南理工大学 | A method of semiconductor microactuator ball particle is prepared based on fluid instability in optical fiber |
| CN110319855A (en) * | 2019-07-05 | 2019-10-11 | 华南理工大学 | A kind of highly sensitive photodetection optical fibre device and preparation method thereof |
| CN110927864A (en) * | 2019-12-11 | 2020-03-27 | 中国电子科技集团公司第四十六研究所 | Metal semiconductor composite microstructure optical fiber for micro optical detector and preparation method thereof |
| CN111290071A (en) * | 2020-01-22 | 2020-06-16 | 华中科技大学 | Preparation method of semiconductor core optical fiber |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109813349A (en) * | 2019-02-27 | 2019-05-28 | 华南理工大学 | A kind of composite optical fiber device and preparation and application detecting light, electricity and chemical signal |
| CN109887676A (en) * | 2019-02-27 | 2019-06-14 | 华南理工大学 | A kind of photoelectricity combination electrode optical fiber and the preparation method and application thereof |
| CN110228790A (en) * | 2019-05-23 | 2019-09-13 | 华南理工大学 | A method of semiconductor microactuator ball particle is prepared based on fluid instability in optical fiber |
| CN110319855A (en) * | 2019-07-05 | 2019-10-11 | 华南理工大学 | A kind of highly sensitive photodetection optical fibre device and preparation method thereof |
| CN110927864A (en) * | 2019-12-11 | 2020-03-27 | 中国电子科技集团公司第四十六研究所 | Metal semiconductor composite microstructure optical fiber for micro optical detector and preparation method thereof |
| CN111290071A (en) * | 2020-01-22 | 2020-06-16 | 华中科技大学 | Preparation method of semiconductor core optical fiber |
| CN111290071B (en) * | 2020-01-22 | 2021-07-20 | 华中科技大学 | Preparation method of semiconductor core optical fiber |
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|---|---|
| CN107129139B (en) | 2019-11-15 |
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