CN106111980B - A kind of preparation method of nano wire - Google Patents
A kind of preparation method of nano wire Download PDFInfo
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- CN106111980B CN106111980B CN201610488065.4A CN201610488065A CN106111980B CN 106111980 B CN106111980 B CN 106111980B CN 201610488065 A CN201610488065 A CN 201610488065A CN 106111980 B CN106111980 B CN 106111980B
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- glass
- nano wire
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- silk material
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/16—Metallic particles coated with a non-metal
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/05—Metallic powder characterised by the size or surface area of the particles
- B22F1/054—Nanosized particles
- B22F1/0547—Nanofibres or nanotubes
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F9/00—Making metallic powder or suspensions thereof
- B22F9/02—Making metallic powder or suspensions thereof using physical processes
- B22F9/06—Making metallic powder or suspensions thereof using physical processes starting from liquid material
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Surface Treatment Of Glass Fibres Or Filaments (AREA)
Abstract
The present invention relates to a kind of preparation method of nano wire, preparation method is as follows：First passage is that metal or semi-conducting material are placed on glass bottom of the tube, goes out microfilament from the glass tube bottom traction of softening when material molten in glass tube, bottom glass pipe softening to glass tube bottom-heated, obtains the glass fluxing technique silk material that a core diameter is A；Second passage is that above-mentioned gained glass fluxing technique silk material bunchy is placed on inside glass tube, then the process for repeating the first passage, obtain the glass fluxing technique silk material that a core diameter is B, and the numeric ratio A of B is small, then according to actual demand design wire drawing road number, finally obtain the glass fluxing technique nano wire that a core diameter is C, and the numeric ratio B of C is small, third passage be by silk material in hydrofluoric acid after erosion surface glass, one-dimensional metal or semiconductor nanowires can be obtained, the present invention is simple and practicable, the nano wire of a variety of materials ingredient can be prepared, and the nanowire diameter uniform, controllable prepared, applied in sensor and electronic industrial products.
Description
Technical field
The invention belongs to nanowire technique field more particularly to a kind of preparation methods of nano wire.
Background technology
Nano wire belongs to monodimension nanometer material, has quantum size effect, skin effect, quantum tunneling effect, dielectric limit
Domain effect etc., so as to cause different from macro properties such as the power of conventional blocks material, heat, light, electricity, magnetic.Nano wire is because having machine
The advantages that tool intensity is high, large specific surface area has shown in catalyst, solar energy conversion, flexible touch screen etc. wide
Application prospect.
The preparation method of nano wire has by suspension method, vapor growth method, sedimentation, template etc., but in reality at present
Use in find, nano wire normal length prepared by these methods only has tens microns, in preparation process it is also possible to raw
At nano particle, the uniformity of nanowire diameter cannot also ensure.
Invention content
One kind is provided the invention aims to overcome the deficiencies in the prior art to be suitble to prepare various metals and semiconductor
Nano wire, and the preparation method of the nano wire of length overlength, uniform diameter.
In order to achieve the above objectives, the technical solution adopted by the present invention is：A kind of preparation method of nano wire, feature exist
In：Include the following steps：
Step 1：Metal or semi-conducting material are put into glass bottom of the tube；
Step 2：Glass bottom of the tube is placed on to the center of heater, to glass tube bottom-heated；
Step 3：When material molten in bottom glass pipe softening, glass tube, go out from the glass tube bottom traction of softening micro-
Silk obtains the glass fluxing technique silk material that a core diameter is A；
Step 4：The glass fluxing technique silk material bunchy of gained in step 3 is placed on inside glass tube, then repeatedly step 2 and
3, the glass fluxing technique silk material that a core diameter is B is obtained, and the numerical value of B is less than A；
Step 5：Wire drawing road number is designed according to actual demand, repeats step 2 and 3, finally obtains the glass that a core diameter is C
Glass coats nano wire silk material, and the numerical value of C is less than B；
Step 6：Glass fluxing technique nano wire silk material after erosion surface glass, is obtained one-dimensional metal or partly led in hydrofluoric acid
Body nano wire.
Preferably, the material of the glass tube is high-boron-silicon glass or quartz glass.
Preferably, the mode of heating is sensing heating or resistance heating.
Due to the application of the above technical scheme, the present invention has following advantages compared with prior art：
The preparation method of the nano wire of the present invention program, preparation method is simple and practicable, can prepare a variety of materials ingredient
Nano wire, and nanowire length is up to several meters or even upper km, while the nanowire diameter uniform, controllable prepared, it can also lead to
It crosses control wire drawing road number and per a time wire drawing rate, obtains the nano wire of different-diameter, be widely used in sensor and electricity
In sub- industrial products.
Description of the drawings
Technical scheme of the present invention is further explained below in conjunction with the accompanying drawings：
Attached drawing 1 is that the first passage glass fluxing technique silk material flow of the invention prepares schematic diagram；
Attached drawing 2 is that the second passage and back pass flow of the invention prepare schematic diagram；
Wherein：1, raw material；2, heating equipment；3, glass tube；4, glass fluxing technique silk material；5, glass fluxing technique nanometer filament
Material.
Specific implementation mode
Below in conjunction with the accompanying drawings and specific embodiment, the present invention is described in further details.
A kind of preparation method of nano wire of the present invention, includes the following steps as shown in attached drawing 1-2：
Step 1：Metal or semi-conducting material are put into glass bottom of the tube；
Step 2：Glass bottom of the tube is placed on to the center of heater, to glass tube bottom-heated；
Step 3：When material molten in bottom glass pipe softening, glass tube, go out from the glass tube bottom traction of softening micro-
Silk obtains the glass fluxing technique silk material that a core diameter is A；
Step 4：The glass fluxing technique silk material bunchy of gained in step 3 is placed on inside glass tube, then repeatedly step 2 and
3, the glass fluxing technique silk material that a core diameter is B is obtained, and the numerical value of B is less than A；
Step 5：Wire drawing road number is designed according to actual demand, repeats step 2 and 3, finally obtains the glass that a core diameter is C
Glass coats nano wire silk material, and the numerical value of C is less than B；
Step 6：Glass fluxing technique nano wire silk material after erosion surface glass, is obtained one-dimensional metal or partly led in hydrofluoric acid
Body nano wire；The material of the glass tube is high-boron-silicon glass or quartz glass；The mode of heating be sensing heating or
Resistance heating.
Wherein, when bottom glass pipe softens, when material molten in glass tube, the glass bar with tip may be used from soft
The glass tube bottom traction of change goes out microfilament, naturally it is also possible to be taken out, need to only be guaranteed microfilament from softening using other manner
Glass bottom of the tube is completely taken out.
Embodiment one：
The present embodiment material therefor is silver, and preparation process is as follows：The small block material of 2g silver is first put into internal diameter 8mm, wall thickness
Glass bottom of the tube, is placed on the center of heater, to glass tube bottom-heated by the Pyrex high-boron-silicon glass bottom of the tube of 1mm；Such as
Shown in attached drawing 1, when temperature is heated to 1000 C or so, bottom glass pipe softens, and in glass tube when silver melting, uses at this time prior
The ready glass bar with tip goes out microfilament from the glass tube bottom traction of softening, and the silk core obtained after the first passage wire drawing is straight
The glass fluxing technique silk material that about 35 μm of diameter；Glass fluxing technique silk material is then cut to the microfilament for being long 10cm, by the above-mentioned microfilament collection of 500 beams
Beam is placed in the Pyrex high-boron-silicon glass pipes of internal diameter 5mm；As shown in Fig. 2, glass bottom of the tube is placed in heater
The heart, to glass tube bottom-heated, when temperature is heated to 1000 C or so, the softening of bottom glass pipe, then use preprepared
Glass bar with tip goes out microfilament from the glass tube bottom traction of softening, obtains the silk core diameter after the second passage wire drawing about
The glass fluxing technique silk material of 720nm；Then it repeats the above steps, after third passage wire drawing, obtains the glass of a core diameter about 34nm
Nano silver wire silk material is coated, glass fluxing technique nano silver wire silk material after erosion surface glass, finally can be obtained one in hydrofluoric acid
Tie up the nano silver wire of diameter about 34nm.
Embodiment two：
The present embodiment material therefor is semi-conducting material germanium, and preparation process is as follows：The small block material of 1.5g germanium is put into interior
Glass bottom of the tube, is placed on the center of heater, to glass tube by the Pyrex high-boron-silicon glass bottom of the tube of diameter 8mm, wall thickness 1mm
Bottom-heated.As shown in Fig. 1, when temperature is heated to 1000 C or so, bottom glass pipe softens, germanium melting in glass tube
When, go out microfilament from the glass tube bottom traction of softening with glass bar of the preprepared with tip at this time, obtains the first passage
The glass fluxing technique silk material of about 42 μm of silk core diameter after wire drawing；Glass fluxing technique silk material is then cut to the microfilament for being long 10cm, it will
The above-mentioned microfilament boundling of 500 beams is placed in the Pyrex high-boron-silicon glass pipes of internal diameter 5mm.As shown in Fig. 2, by glass bottom of the tube
It is placed on the center of heater, to glass tube bottom-heated.When temperature is heated to 1000 C or so, the softening of bottom glass pipe,
Go out microfilament from the glass tube bottom traction of softening with glass bar of the preprepared with tip, after obtaining the second passage wire drawing
The glass fluxing technique silk material of silk core diameter about 840nm；Then it repeats the above steps, after third passage wire drawing, obtains a core diameter about
The glass fluxing technique Ge nanoline silk material of 42nm, finally by glass fluxing technique Ge nanoline silk material erosion surface glass in hydrofluoric acid
Afterwards, the Ge nanoline of one-dimensional diameter about 42nm can be obtained.
Embodiment three：
The present embodiment material therefor is copper-phosphorus alloy, and preparation process is as follows：The small block material of 1.5g copper-phosphorus alloys is put into
Glass bottom of the tube, is placed on the center of heater, to glass by the Pyrex high-boron-silicon glass bottom of the tube of internal diameter 8mm, wall thickness 1mm
Bottom of the tube heats.As shown in Fig. 1, when temperature is heated to 900 C or so, bottom glass pipe softens, and copper phosphorus closes in glass tube
When gold melting, go out microfilament from the glass tube bottom traction of softening with glass bar of the preprepared with tip at this time, obtains the
The glass fluxing technique silk material of 20 μm of silk core diameter after a time wire drawing, it is the micro- of long 10cm then to cut glass fluxing technique silk material
Silk, the above-mentioned microfilament boundling of 500 beams is placed in the Pyrex high-boron-silicon glass pipes of internal diameter 5mm.As shown in Fig. 2, by glass tube
Bottom is placed on the center of heater, and to glass tube bottom-heated, when temperature is heated to 900 C or so, bottom glass pipe is soft
Change, then go out microfilament from the glass tube bottom traction of softening with glass bar of the preprepared with tip, obtains the drawing of the second passage
The glass fluxing technique silk material of silk core diameter about 440nm after silk；Then it repeats the above steps, after third passage wire drawing, obtains a core
The glass fluxing technique copper phosphorus nano wire silk material of diameter about 24nm, finally corrodes glass fluxing technique copper phosphorus nano wire silk material in hydrofluoric acid
After watch crystal, the copper phosphorus nano wire of one-dimensional diameter about 24nm can be obtained.
The preparation method of the nano wire of the present invention, preparation method is simple and practicable, can prepare the nanometer of a variety of materials ingredient
Line, and nanowire length is up to several meters or even upper km, while the nanowire diameter uniform, controllable prepared, control can also be passed through
Wire drawing road processed number and every a time wire drawing rate, obtain the nano wire of different-diameter, are widely used in sensor and electronics work
In industry product.
The specific application example that the above is only the present invention, is not limited in any way protection scope of the present invention.All uses
Equivalent transformation or equivalent replacement and the technical solution formed, all fall within rights protection scope of the present invention.
Claims (3)
1. a kind of preparation method of nano wire, it is characterised in that：Include the following steps：
Step 1：Metal or semi-conducting material are put into glass bottom of the tube；
Step 2：Glass bottom of the tube is placed on to the center of heater, to glass tube bottom-heated；
Step 3：When material molten in bottom glass pipe softening, glass tube, goes out microfilament from the glass tube bottom traction of softening, obtain
To the glass fluxing technique silk material that silk core diameter is A；
Step 4：The glass fluxing technique silk material bunchy of gained in step 3 is placed on inside glass tube, then repeatedly step 2 and 3, is obtained
To the glass fluxing technique silk material that silk core diameter is B, and the numerical value of B is less than A；
Step 5：Wire drawing road number is designed according to actual demand, repeats step 2 and 3, finally obtains the glass that a core diameter is C
Nano wire silk material is coated, and the numerical value of C is less than B；
Step 6：Glass fluxing technique nano wire silk material after erosion surface glass, is obtained one-dimensional metal or semiconductor is received in hydrofluoric acid
Rice noodles.
2. the preparation method of nano wire according to claim 1, it is characterised in that：The material of the glass tube is high borosilicate
Glass or quartz glass.
3. the preparation method of nano wire according to claim 1, it is characterised in that：The mode of heating be sensing heating or
Person's resistance heating.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610488065.4A CN106111980B (en) | 2016-06-29 | 2016-06-29 | A kind of preparation method of nano wire |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610488065.4A CN106111980B (en) | 2016-06-29 | 2016-06-29 | A kind of preparation method of nano wire |
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| Publication Number | Publication Date |
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| CN106111980A CN106111980A (en) | 2016-11-16 |
| CN106111980B true CN106111980B (en) | 2018-07-13 |
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| CN201610488065.4A Active CN106111980B (en) | 2016-06-29 | 2016-06-29 | A kind of preparation method of nano wire |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106735263B (en) * | 2016-12-12 | 2019-01-18 | 厦门大学 | The molten pumping manufacturing device and manufacturing method of metallic fiber |
| KR20230033458A (en) * | 2021-09-01 | 2023-03-08 | 삼성전기주식회사 | Nano wire bundle and manufacturing method for the same |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103787575A (en) * | 2014-02-26 | 2014-05-14 | 江门市新会区宇宏科技有限责任公司 | Adjustable drawing device and drawing method |
| CN104894428A (en) * | 2015-06-12 | 2015-09-09 | 北京科技大学 | Copper-based hyperelastic shape memory alloy wire and preparation method thereof |
| CN105132750A (en) * | 2015-09-18 | 2015-12-09 | 北京科技大学 | Magnetic torsional Ni-Mn-Ga alloy wire |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4414251B2 (en) * | 2004-03-04 | 2010-02-10 | 三洋化成工業株式会社 | Non-slip hot melt composition |
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- 2016-06-29 CN CN201610488065.4A patent/CN106111980B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103787575A (en) * | 2014-02-26 | 2014-05-14 | 江门市新会区宇宏科技有限责任公司 | Adjustable drawing device and drawing method |
| CN104894428A (en) * | 2015-06-12 | 2015-09-09 | 北京科技大学 | Copper-based hyperelastic shape memory alloy wire and preparation method thereof |
| CN105132750A (en) * | 2015-09-18 | 2015-12-09 | 北京科技大学 | Magnetic torsional Ni-Mn-Ga alloy wire |
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| CN106111980A (en) | 2016-11-16 |
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Effective date of registration: 20191210 Address after: 315000 A1-1, workshop 2, No. 96, mujin Road, hi tech Zone, Ningbo City, Zhejiang Province Patentee after: Zhejiang benfeng science and Technology Co., Ltd. Address before: 215100 science and Technology Pioneer Park, Kam Fengzhen Road, Zhangjiagang, Jiangsu, Suzhou Patentee before: Suzhou new world Nanometer Technology Co., Ltd. |
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