CN107119329A - A kind of crystallization method of polysilicon, crystallization apparatus and polysilicon - Google Patents
A kind of crystallization method of polysilicon, crystallization apparatus and polysilicon Download PDFInfo
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- CN107119329A CN107119329A CN201710283522.0A CN201710283522A CN107119329A CN 107119329 A CN107119329 A CN 107119329A CN 201710283522 A CN201710283522 A CN 201710283522A CN 107119329 A CN107119329 A CN 107119329A
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- amorphous silicon
- silicon layer
- liquid
- crystallization
- polysilicon
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B30/00—Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B28/00—Production of homogeneous polycrystalline material with defined structure
- C30B28/02—Production of homogeneous polycrystalline material with defined structure directly from the solid state
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
Abstract
Disclosed herein is a kind of crystallization method of polysilicon, crystallization apparatus and polysilicon.The crystallization method of the polysilicon, including：The substrate that deposition has amorphous silicon layer is placed in liquid；Laser is carried out to the amorphous silicon layer in liquid by the radium-shine annealing ELA devices of quasi-molecule and irradiates non-crystalline silicon described in crystallization.This paper technical scheme can improve the crystalline quality of polysilicon so that the energy adjustment in crystallization process is more continuous and convenient.
Description
Technical field
The present invention relates to liquid crystal display panel backboard preparation field, espespecially a kind of crystallization method of polysilicon, crystallization apparatus
And polysilicon.
Background technology
For mobile product, OLED (Organic Light-Emitting Diode, the pole of organic electroluminescent two
Pipe) device due to high contrast, outstanding display effect and can be used for Flexible Displays and more and more weighed
Depending on.And the backboard of OLED display panel generally requires LTPS (Low Temperature Poly-silicon, low temperature polycrystalline silicon skill
Art) drive, as one of LTPS technology of core, (Excimer Laser Annealing, quasi-molecule is radium-shine to move back ELA
Fire) effect of equipment directly affects final ionic mobility, and then last display effect is affected, so how to pass through
Simple method obtain preferable crystallization effect p-Si (Poly-Si, polysilicon) will for LTPS backboards excellent properties
Realization there is conclusive effect.
Existing ELA equipment is to realize the p-Si of control to(for) different crystallization effects by changing the energy of laser,
This method can no doubt meet requirement of the existing condition for p-Si performance, but this method is for the requirement of equipment
It is higher, it is necessary to the control system of more complicated laser energy, therefore cost is higher.In addition, this method is because ELA equipment is to a-
Si (amorphous silicon, non-crystalline silicon) heating is to carry out in a vacuum, and uncontrollable cooling velocity can influence a-Si to add
Crystalline state after heat so that the uniformity on the p-Si surfaces finally given is poor, this will influence whether final TFT (Thin
Film Transistor, thin film transistor (TFT)) characteristic.
The content of the invention
This application provides a kind of crystallization method of polysilicon, crystallization apparatus and polysilicon, it is possible to increase the knot of polysilicon
Crystalloid amount so that the energy adjustment in crystallization process is more continuous and convenient.
The embodiments of the invention provide a kind of crystallization method of polysilicon, including：The substrate that deposition has amorphous silicon layer is put
In liquid；Laser is carried out to the amorphous silicon layer in liquid by the radium-shine annealing ELA devices of quasi-molecule and irradiates amorphous described in crystallization
Silicon.
The embodiment of the present invention additionally provides a kind of polysilicon, and the polysilicon uses the crystallization method system of above-mentioned polysilicon
It is standby.
The embodiment of the present invention additionally provides a kind of crystallization apparatus of polysilicon, including：Crystallization pond, for loading liquid；Base
Board fixer, is arranged in the crystallization pond, has the substrate of amorphous silicon layer for carrying deposition；The radium-shine annealing ELA of quasi-molecule
Device, for carrying out non-crystalline silicon described in laser irradiation crystallization to the amorphous silicon layer in the liquid.
Compared with correlation technique, the embodiments of the invention provide a kind of crystallization method of polysilicon, crystallization apparatus and polycrystalline
Silicon, the substrate that deposition has non-crystalline silicon (a-Si) is put into liquid, by the radium-shine annealing ELA devices of quasi-molecule to non-in liquid
Crystal silicon layer carries out non-crystalline silicon described in laser irradiation crystallization, and amorphous silicon surfaces absorb the high temperature produced after the energy of laser can be by surface
Liquid gasification, the high pressure and the Action of Gravity Field of upper liquid produced after liquid gasification can in the surface of the liquid of the silicon of thawing
To suppress the longitudinal growth of silicon, the roughness on the surface of generation polysilicon (p-Si) is reduced, makes polysilicon surface evenly, lifted
The quality of crystallization.In addition, change the laser energy that amorphous silicon layer is obtained by changing amorphous silicon layer apart from the distance of liquid level, this
Kind it is more to be continuous and easy to control for the adjusting method of laser energy, advantageously in obtaining optimal laser energy.
Other features and advantages of the present invention will be illustrated in the following description, also, partly becomes from specification
Obtain it is clear that or being understood by implementing the present invention.The purpose of the present invention and other advantages can be by specification, rights
Specifically noted structure is realized and obtained in claim and accompanying drawing
Brief description of the drawings
Accompanying drawing is used for providing further understanding technical solution of the present invention, and constitutes a part for specification, with this
The embodiment of application is used to explain technical scheme together, does not constitute the limitation to technical solution of the present invention.
Fig. 1 is a kind of flow chart of the crystallization method of polysilicon of the embodiment of the present invention one；
Fig. 2-1 is a kind of schematic diagram (one) of crystallization apparatus of polysilicon in the embodiment of the present invention three；
Fig. 2-2 is a kind of schematic diagram (two) of crystallization apparatus of polysilicon in the embodiment of the present invention three；
Fig. 3 is a kind of flow chart of the crystallization method of polysilicon in example 1 of the present invention；
Fig. 4-1 be example 1 of the present invention in crystallization process by the way that amorphous silicon layer is tuned up into reduction apart from the distance of liquid level
The schematic diagram of the laser energy of acquisition；
Fig. 4-2 be example 1 of the present invention in crystallization process by turning amorphous silicon layer down increase apart from the distance of liquid level
The schematic diagram of the laser energy of acquisition.
Embodiment
For the object, technical solutions and advantages of the present invention are more clearly understood, below in conjunction with accompanying drawing to the present invention
Embodiment be described in detail.It should be noted that in the case where not conflicting, in the embodiment and embodiment in the application
Feature can mutually be combined.
Can be in the computer system of such as one group computer executable instructions the step of the flow of accompanying drawing is illustrated
Perform.And, although logical order is shown in flow charts, but in some cases, can be with suitable different from herein
Sequence performs shown or described step.
Embodiment one
As shown in figure 1, the embodiment of the present invention provides a kind of crystallization method of polysilicon, including：
S110, the substrate that deposition has amorphous silicon layer is placed in liquid；
S120, carries out laser to the amorphous silicon layer in liquid by the radium-shine annealing ELA devices of quasi-molecule and irradiates described in crystallization
Non-crystalline silicon；
Methods described can also include following features：
In one embodiment, the liquid is water.Water will not react in crystallization process with silicon, also be not easy
Corrode the chamber of crystallization.
In other embodiments, the liquid can also be other liquid than water, such as, salting liquid etc..
In one embodiment, before the substrate that deposition has amorphous silicon layer is placed in liquid, methods described is also wrapped
Include：
The crystallite dimension needed according to polycrystalline crystallization of silicon determines the distance of the amorphous silicon layer and liquid level；
Wherein, the amorphous silicon layer is different from the distance of liquid level, and the laser energy that the amorphous silicon layer is obtained is different.
In one embodiment, the crystallite dimension needed according to polycrystalline crystallization of silicon determines the amorphous silicon layer and liquid
The distance in face, including：
For the film layer structure of the amorphous silicon layer, in certain excursion of laser energy, when needs obtain big
During crystal grain, the amorphous silicon layer is diminished apart from the distance of liquid level to increase the laser energy that the amorphous silicon layer is obtained；When need
When obtaining small crystal grain, the amorphous silicon layer is become into the big laser to reduce the amorphous silicon layer acquisition apart from the distance of liquid level
Energy.
Change the laser energy that amorphous silicon layer is obtained by changing amorphous silicon layer apart from the distance of liquid level, it is this for swashing
The adjusting method of light energy is more to be continuous and easy to control, and then is met the optimal crystallite dimension of requirement.
In one embodiment, methods described also includes：Amorphous silicon layer in liquid carry out laser pre-irradiation and
In laser irradiation process, the oxygen that protective gas dissolves to exclude in liquid is passed through into the liquid.
Wherein, the protective gas includes：Nitrogen or argon gas；
In one embodiment, methods described also includes：
The silica SiO generated to eliminate in crystallization process is cleaned to the polysilicon obtained after Crystallizing treatment2Oxygen
Change film.
Wherein it is possible to be cleaned using 1%~3% hydrofluoric acid HF solution to the polysilicon after Crystallizing treatment.
Embodiment two
The embodiment of the present invention provides a kind of polysilicon, and the polysilicon is prepared using the crystallization method of above-mentioned polysilicon.
Embodiment three
As shown in Fig. 2-1, the embodiment of the present invention provides a kind of crystallization apparatus of polysilicon, including：
Crystallization pond 201, for loading liquid；
Apparatus for fixing substrate 202, is arranged in the crystallization pond, has the substrate of amorphous silicon layer for carrying deposition；
The radium-shine annealing ELA devices 203 of quasi-molecule, for carrying out laser irradiation crystallization institute to the amorphous silicon layer in the liquid
State non-crystalline silicon.
In one embodiment, the liquid is water.
In other embodiments, the liquid can also be other liquid than water, such as, salting liquid etc..
In one embodiment, as shown in Fig. 2-1, the apparatus for fixing substrate 202 can be plummer；
In one embodiment, as shown in Fig. 2-1, the radium-shine annealing ELA devices 203 of quasi-molecule can be by institute
State the top movement in crystallization pond so that laser beam can be irradiated to amorphous silicon substrate everywhere；
As shown in Fig. 2-2, in one embodiment, the crystallization apparatus also includes a transparent protective shield 204, described
Transparent protective shield 204 is placed in the top in the crystallization pond 201, for protecting the laser of the radium-shine annealing ELA devices 203 of quasi-molecule to shine
Camera lens is penetrated, prevents the steam in crystallization pond 201, liquid from irradiating the pollution of camera lens to laser.
In one embodiment, the apparatus for fixing substrate 202, be additionally operable to adjust the amorphous silicon layer and liquid level away from
From the crystallite dimension needed according to polycrystalline crystallization of silicon determines the distance of the amorphous silicon layer and liquid level；Wherein, the amorphous silicon layer
Different from the distance of liquid level, the laser energy that the amorphous silicon layer is obtained is different.
In one embodiment, the crystallite dimension needed according to polycrystalline crystallization of silicon determines the amorphous silicon layer and liquid
The distance in face, including：For the film layer structure of the amorphous silicon layer, in certain excursion of laser energy, when needs are obtained
When obtaining crystal grain greatly, the amorphous silicon layer is diminished apart from the distance of liquid level to increase the laser energy that the amorphous silicon layer is obtained
Amount；When needing to obtain small crystal grain, the amorphous silicon layer is become apart from the distance of liquid level and obtained with reducing the amorphous silicon layer greatly
The laser energy obtained.
In one embodiment, as shown in Fig. 2-2, the plummer 202, in addition to it is high for adjusting plummer support
The governor motion of degree, the governor motion is used to adjust the amorphous silicon layer and liquid according to the crystallite dimension that polycrystalline crystallization of silicon needs
The distance in face；
Change the laser energy that amorphous silicon layer is obtained by changing amorphous silicon layer apart from the distance of liquid level, it is this for swashing
The adjusting method of light energy is more to be continuous and easy to control, and then is met the optimal crystallite dimension of requirement.
In one embodiment, as shown in Fig. 2-2, the crystallization apparatus also includes air-breather 205, the ventilation dress
In putting for carrying out laser pre-irradiation and laser irradiation process in the amorphous silicon layer in liquid, protection is passed through into the liquid
The oxygen that gas is dissolved with excluding in liquid.
Wherein, the protective gas includes：Nitrogen or argon gas；
Example 1
A kind of crystallization method of polysilicon is illustrated below by one.
As shown in figure 3, the crystallization method of the polysilicon may comprise steps of：
It is passed through protective gas to exclude the oxygen dissolved in the liquid in S301, the liquid into crystallization pond；
Such as, the protective gas such as nitrogen or argon gas are passed through in liquid medium to discharge the oxygen dissolved in liquid, with
Influence of the oxygen dissolved in reduction liquid for crystallization process.
S302, the substrate that deposition has a-Si layers of non-crystalline silicon is put into liquid, the crystal grain chi needed according to polycrystalline crystallization of silicon
The very little distance for determining the amorphous silicon layer and liquid level；
Wherein, the liquid can be water or other liquid than water；It is advantageous in that using water：Water will not be in crystalline substance
Reacted during change with silicon, in addition, the price of water does not allow the chamber of perishable crystallization than relatively low yet.
The presence of liquid medium serves vital effect for the formation of polysilicon.Laser action is in non-crystalline silicon
(a-Si) after on, silicon absorb laser energy after so that melt, the temperature of moment can reach 1400 DEG C or so.Liquid is by gas
Change, ionization produces various groups, these groups can help row core, stable nanocrystal, help nanograin growth.Laser shines
The heat for penetrating generation is transmitted towards both direction, after heat is transmitted down, and the non-crystalline silicon of bottom, which absorbs, enters melting after heat
State；After heat is transmitted upward, the heat that conducts upwards produces higher air pressure so that the water of liquid gasifies, generation
The Action of Gravity Field of air pressure and liquid in itself can cause the surface after crystallization of silicon more uniform above the silicon of melting.
Wherein, for the film layer structure of specific amorphous silicon layer, in certain excursion of laser energy, when needs are obtained
When obtaining crystal grain greatly, the amorphous silicon layer is diminished apart from the distance of liquid level to increase the laser energy that the amorphous silicon layer is obtained
Amount；When needing to obtain small crystal grain, the amorphous silicon layer is become apart from the distance of liquid level and obtained with reducing the amorphous silicon layer greatly
The laser energy obtained.
Because liquid can absorb the laser of a part, with the increase of the depth of laser light incident, the energy of laser
It is gradually reduced, it is only necessary to change the position of amorphous silicon layer in a liquid and can be obtained by the laser of different-energy and heated.Institute
So that this method can simply obtain suitable laser energy and amorphous silicon layer is heated.
As shown in Fig. 4-1, when need with less laser energy carry out heating crystallization when, it is only necessary to by substrate be placed in away from
Chaotropic face remote position (H).
As shown in the Fig. 4-2, when needing to carry out heating crystallization with larger laser energy, it is only necessary to by substrate be placed in away from
The nearer position (h) in chaotropic face.
S303, laser irradiation crystallization of amorphous silicon is carried out to amorphous silicon layer using the radium-shine annealing ELA devices of quasi-molecule；.
S304, the silica generated to eliminate in crystallization process is cleaned to the polysilicon obtained after Crystallizing treatment
SiO2Oxide-film.
During crystallization, due to high temperature Si can and water and water in a small amount of oxygen be reacted, so can be
The thin SiO2 oxide-films of obtained p-Si Surface Creation, this layer film can influence follow-up TFT (Thin Film
Transistor, thin film transistor (TFT)) characteristic.In order to eliminate SiO2 films for the influence of TFT characteristics, it is necessary to be completed in crystallization
Hydrofluoric acid HF cleaning is added afterwards, such as, can use 1%~3% hydrofluoric acid HF solution.
Although disclosed herein embodiment as above, described content be only readily appreciate the present invention and use
Embodiment, is not limited to the present invention.Technical staff in any art of the present invention, is taken off not departing from the present invention
On the premise of the spirit and scope of dew, any modification and change, but the present invention can be carried out in the form and details of implementation
Scope of patent protection, still should be subject to the scope of the claims as defined in the appended claims.
Claims (10)
1. a kind of crystallization method of polysilicon, including：
The substrate that deposition has amorphous silicon layer is placed in liquid；
Laser is carried out to the amorphous silicon layer in liquid by the radium-shine annealing ELA devices of quasi-molecule and irradiates non-crystalline silicon described in crystallization.
2. according to the method described in claim 1, it is characterised in that：
Before the substrate that deposition has amorphous silicon layer is placed in liquid, methods described also includes：
The crystallite dimension needed according to polycrystalline crystallization of silicon determines the distance of the amorphous silicon layer and liquid level；
Wherein, the amorphous silicon layer is different from the distance of liquid level, and the laser energy that the amorphous silicon layer is obtained is different.
3. method according to claim 2, it is characterised in that：
The crystallite dimension needed according to polycrystalline crystallization of silicon determines the distance of the amorphous silicon layer and liquid level, including：
For the film layer structure of the amorphous silicon layer, in certain excursion of laser energy, when needing to obtain big crystal grain
When, the amorphous silicon layer is diminished apart from the distance of liquid level to increase the laser energy that the amorphous silicon layer is obtained；When needs are obtained
When obtaining small crystal grain, the amorphous silicon layer is become into the big laser energy to reduce the amorphous silicon layer acquisition apart from the distance of liquid level
Amount.
4. according to the method described in claim 1, it is characterised in that methods described also includes：
In the amorphous silicon layer in liquid carries out laser pre-irradiation and laser irradiation process, protection gas is passed through into the liquid
The oxygen that body is dissolved with excluding in liquid.
5. according to the method described in claim 1, it is characterised in that methods described also includes：
The silica SiO generated to eliminate in crystallization process is cleaned to the polysilicon obtained after Crystallizing treatment2Oxide-film.
6. the method according to any one of claim 1-5, it is characterised in that：
The liquid is water.
7. a kind of polysilicon, the polysilicon uses the crystallization method system of the polysilicon as any one of claim 1-6
It is standby.
8. a kind of crystallization apparatus of polysilicon, including：
Crystallization pond, for loading liquid；
Apparatus for fixing substrate, is arranged in the crystallization pond, has the substrate of amorphous silicon layer for carrying deposition；
The radium-shine annealing ELA devices of quasi-molecule, for carrying out amorphous described in laser irradiation crystallization to the amorphous silicon layer in the liquid
Silicon.
9. equipment according to claim 8, it is characterised in that：
The apparatus for fixing substrate, is additionally operable to adjust the distance of the amorphous silicon layer and liquid level, is needed according to polycrystalline crystallization of silicon
Crystallite dimension determines the distance of the amorphous silicon layer and liquid level；
Wherein, the amorphous silicon layer is different from the distance of liquid level, and the laser energy that the amorphous silicon layer is obtained is different.
10. equipment according to claim 8 or claim 9, it is characterised in that also including air-breather, the air-breather is used for
In the amorphous silicon layer in liquid carries out laser pre-irradiation and laser irradiation process, be passed through into the liquid protective gas with
Exclude the oxygen dissolved in liquid.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113471102A (en) * | 2021-05-17 | 2021-10-01 | 中国科学院微电子研究所 | Laser annealing equipment and laser annealing method |
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| US20020168577A1 (en) * | 2001-05-11 | 2002-11-14 | Jin-Mo Yoon | Method of crystallizing amorphous silicon |
| CN101311344A (en) * | 2008-02-27 | 2008-11-26 | 中国科学院上海光学精密机械研究所 | Polysilicon film preparation with crystal particle dimension controllable and detection device |
| CN102263014A (en) * | 2011-07-29 | 2011-11-30 | 南开大学 | Method for preparing polysilicon thin film by crystal nucleus precontrol laser crystallization method |
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2017
- 2017-04-26 CN CN201710283522.0A patent/CN107119329B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020168577A1 (en) * | 2001-05-11 | 2002-11-14 | Jin-Mo Yoon | Method of crystallizing amorphous silicon |
| CN101311344A (en) * | 2008-02-27 | 2008-11-26 | 中国科学院上海光学精密机械研究所 | Polysilicon film preparation with crystal particle dimension controllable and detection device |
| CN102263014A (en) * | 2011-07-29 | 2011-11-30 | 南开大学 | Method for preparing polysilicon thin film by crystal nucleus precontrol laser crystallization method |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113471102A (en) * | 2021-05-17 | 2021-10-01 | 中国科学院微电子研究所 | Laser annealing equipment and laser annealing method |
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