CN101311344A - Polysilicon film preparation with crystal particle dimension controllable and detection device - Google Patents

Polysilicon film preparation with crystal particle dimension controllable and detection device Download PDF

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Publication number
CN101311344A
CN101311344A CNA2008100339388A CN200810033938A CN101311344A CN 101311344 A CN101311344 A CN 101311344A CN A2008100339388 A CNA2008100339388 A CN A2008100339388A CN 200810033938 A CN200810033938 A CN 200810033938A CN 101311344 A CN101311344 A CN 101311344A
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polysilicon membrane
laser
light beam
polysilicon
proofing unit
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CN101311344B (en
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楼祺洪
袁志军
周军
董景星
魏运荣
赵宏明
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Nanjing Zhong An Photoelectric Technology Co Ltd
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Shanghai Institute of Optics and Fine Mechanics of CAS
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Abstract

The invention discloses a preparation for a polysilicon thin film with controllable grain size and a detection device thereof, which is characterized in that the invention consists of laser source, an optical splitter, a beam plastic system, a polysilicon thin film substrate, an optical focusing system, a stimulated Raman spectrum receiving system, a Raman data analyzing and feedback system and a movable worktable. The invention has the advantages that an online detection can be carried out simultaneously when the polysilicon thin film is prepared, thus providing the optimal energy density for the preparation of the polysilicon thin film; the detection is a non-destructive testing; the testing cost is low; the detection is fast; moreover, the device can accurately detect the granularity of the polysilicon thin film, promote the excellent rate and improve the capacity. The preparation for the polysilicon thin film and the detection device are applicable to the preparation and real time detection of industrialized polysilicon thin film; the size of the grain can be accurately detected; the energy density of the laser can be monitored in real time.

Description

Polysilicon membrane preparation and proofing unit that grain-size is controlled
Technical field
The present invention relates to polysilicon, the preparation and the proofing unit of the polysilicon membrane that particularly a kind of grain-size is controlled in order to detecting the granularity of polysilicon membrane crystallization crystal grain fast, in real time, thereby are adjusted the required optimum capacity density of laser crystallization.
Background technology
Laser crystallization has good prospects for application as the core process of low temperature polycrystalline silicon (LTPS) technology in liquid-crystal display (LCD) field.The principle of laser crystallization is that scanning makes its fusion to the amorphous silicon membrane of low temperature depositing with laser, is recrystallized into to be polysilicon membrane.Compare with at present used amorphous silicon membrane liquid crystal panel, polysilicon membrane liquid crystal panel cost is comparatively cheap, and has higher resolution, this is because the transmission speed of electronics in polysilicon is faster, quality is more good, thereby can make the size of membrane transistor littler, increase the brightness of indicating meter and reduce watt consumption.
Relatively more commonly used is excimer laser crystallization (excimer laser crystallization) technology at present, can realize the preparation of fairly large polysilicon membrane.But this technology also has very big shortcoming, as repeated relatively poor, the degree of crystallization of apparatus expensive, technology energy density is changed sensitivity etc.There are some researches show that the crystal grain increase can make grain boundary defects reduce, the conductivity of polysilicon film device also is improved.In order to obtain bigger crystal grain, high-quality polysilicon membrane, some researchists utilize green (light) laser (mainly being the neodymium laser of frequency multiplication) preparation polysilicon membrane recently, and the thin-film transistor performance of making far exceeds the level of excimer laser crystallization.
As mentioned above, the granularity of polysilicon membrane changes very sensitive to laser energy density.And because the output rating instability of excimer laser, cause the granularity of the polysilicon membrane that forms obviously inhomogeneous.This causes prepared polysilicon membrane not necessarily to have enough big grain-size, does not require to be abandoned thereby reach mobility.
Whether the method that needs a kind of objective evaluation polysilicon membrane in the production reaches requirement in order to the granularity of measuring polysilicon membrane.Utilize powerful opticmicroscope observation roughness of film traditionally, but this method depends on naked eyes, objective inadequately accurate.In addition, scanning electronic microscope (SEM) is though image is a kind of method more intuitively, directly observed and assessed by the film surface image of operator after to annealing.Yet because this detection method has destructiveness to film, and cost is higher time-consuming, is not suitable for industry so be mainly used in scientific experiment.
Summary of the invention
The objective of the invention is in order to remedy above-mentioned the deficiencies in the prior art, the preparation and the proofing unit of the controlled polysilicon membrane of a kind of grain-size are provided, reach the size that real-time online detects polysilicon membrane crystal grain, and adjust the required laser optimum capacity density of polycrystallization thereupon, control the grain-size of the polysilicon of polysilicon membrane effectively.
Technical solution of the present invention is as follows:
Polysilicon membrane preparation and proofing unit that a kind of grain-size is controlled, be characterized in by laser source, optical splitter, the beam shaping system, the polysilicon membrane substrate, optical focusing system, excited Raman spectrum receiving system, Raman data analysis and feedback system and traverser are formed, each position component relation is as follows: described polysilicon membrane substrate places on the described traverser, the laser beam of described laser source output is divided into first light beam and second light beam by optical splitter, the polysilicon membrane substrate that described first light beam scans on traverser after the beam shaping system carries out laser annealing, described second light beam is radiated at the polysilicon membrane substrate of process laser annealing through described optical focusing system, excite the Raman spectrum of annealed polysilicon and received by described excited Raman spectrum receiving system, carry out data processing by Raman data analysis and feedback system then and feed back to the power that laser source control laser source is exported laser, to adjust laser energy density and stability thereof.
Described beam shaping system becomes the equally distributed strip light beam of light intensity to first beam shaping.
Described optical focusing system focuses on annealed polysilicon membrane with second light beam, spot size 0.5~1.5 μ m.
Described laser source is pulsed laser or continuous wave laser, wavelength region 266~1064nm;
The splitting ratio of described first light beam and second light beam is 95~80%:5~20%.
Described Raman spectrum receiving system receives sensitivity to the spectrum of described laser source wavelength region, and fluorescence shield effectiveness is preferably arranged.
Described Raman data analysis and feedback system are computers, the data of being sent into by the Raman spectrum receiving system are carried out data processing, and show corresponding TO peak-to-peak position, halfwidth and grain size according to the result who handles, adjust laser output power to laser source output control signal corresponding.
Described substrate is a substrate of glass.
Principle of the present invention is to utilize the characteristic parameter of polysilicon membrane Raman spectrum and the corresponding relation of annealing laser energy density, obtain a judge index via quantification, thereby can detect the size of crystal grain by real-time online, and adjust the required optimum capacity density of polycrystallization thereupon.
We know: excited Raman spectrum is a kind of important means that obtains structure of matter information, the laser Raman spectroscopy of describing among the present invention can more accurately be studied amorphous silicon membrane and receive the microtexture of polycrystal silicon film, as the grain-size of polysilicon membrane and degree of crystallinity etc.There are some researches show that grain size and raman spectral characteristics (position of TO main peak and halfwidth) have clear and definite corresponding relation.Crystal grain is big more, and degree of crystallinity is high more, and the TO peak position of Raman spectrum is more near the feature peak position (520cm of silicon single crystal -1), and the halfwidth at TO peak (FWHM) is also more little.People have summed up the relation that some formula are described TO peak position and grain-size.As Δd = 2 π B Δ ω TO Deng, wherein Δ d is a grain size, Δ ω TOBe polysilicon TO peak position and silicon single crystal feature peak position 520cm -1Gap, B is a constant.(deliver on the open source literature, referring to as Feng Tuanhui, Zhang Yuxiang, Wang Haiyan etc., the recrystallize technology of a-Si:H film and the Raman spectroscopic analysis of Si film, Materials Science and Engineering journal, 2005,23 (3): 463~465).With this rule is foundation, can gather the excited Raman spectrum of a series of different-energy density laser annealed polysilicon membranes, and demarcate its characteristic peak positions and halfwidth successively.Select wherein peak position near 520cm -1And that the narrowest energy density values of halfwidth.As set energy density substrate is annealed then.This set energy density annealed polysilicon membrane can meet the polysilicon granularity requirements preferably.
Technique effect of the present invention:
Be used to detect the device of polysilicon membrane quality among the present invention, can determine best annealed energy density with the grain-size of noncontact mode high precision objective assessment polysilicon membrane, and in time adjust the laser energy density that is used for crystallization of silicon.
Description of drawings
Fig. 1 is grain-size of the present invention controlled polysilicon membrane preparation and proofing unit synoptic diagram.
Among the figure:
The 1-laser apparatus 2-beam splitter 3-first light beam 4-beam shaping 5-of the system polysilicon membrane substrate 6-second light beam 7-optical focusing system 8-Raman spectrum receiving system 9-Raman spectrum data is analyzed and feedback system
Solid line is represented light path among the figure, and dotted line is timberline road or annexation only.
Embodiment
The invention will be further described below in conjunction with embodiment and accompanying drawing, but should not limit protection scope of the present invention with this.
See also Fig. 1 earlier, Fig. 1 is grain-size of the present invention controlled polysilicon membrane preparation and proofing unit synoptic diagram, as seen from the figure, polysilicon membrane preparation and proofing unit that grain-size of the present invention is controlled, by laser source 1, optical splitter 2, beam shaping system 4, polysilicon membrane substrate 5, optical focusing system 7, excited Raman spectrum receiving system 8, Raman data analysis and feedback system 9 and traverser are formed, each position component relation is as follows: described polysilicon membrane substrate 5 places on the described traverser, the laser beam of described laser source 1 output is divided into first light beam 3 and second light beam 6 by optical splitter 2, the polysilicon membrane substrate 5 that described first light beam 3 scans after beam shaping system 4 on traverser carries out laser annealing, described second light beam 6 is radiated at the polysilicon membrane substrate 5 of process laser annealing through described optical focusing system 7, excite the Raman spectrum of annealed polysilicon and received by described excited Raman spectrum receiving system 8, carry out data processing and feed back to laser source 1 by Raman data analysis and feedback system 9 then, the power of control laser source 1 output laser is to adjust laser energy density and stability thereof.
Be based on the variation relation of the TO peak position of the thin film actuated Raman spectrum of annealed polycrystalline silicon among the present invention,, can determine the pairing laser energy density of largest grain size by the Raman spectrum of analysed film with halfwidth and grain-size.Concrete implementation step is as follows:
1, annealing laser source 1 is the Nd:YAG pulsed laser (wavelength 532nm) of two frequencys multiplication, pulsewidth 30ns; First light beam 3 behind optical splitter 2 and the strength ratio of second light beam 6 are 90%:10%;
2, the substrate 5 of amorphous silicon membrane that provides a low temperature depositing is positioned over movably on the worktable; Substrate in this example is healthy and free from worry 1737 glass of thickness 1.1mm, by the method for plasma reinforced chemical vapour deposition (PECVD), deposits the SiO of 200nm successively on substrate 2With the 100nm amorphous silicon membrane;
3, laser is through first light beam 3 of optical splitter, after beam shaping system 4, become the equally distributed bar shaped light beam of a light intensity, this light beam scans anneal with a series of different energy densities to the different zones of described amorphous silicon membrane, for example, and from 100mJ/cm 2~1000mJ/cm 2Choose different-energy density in the scope, as choose 200mJ/cm 2, 300mJ/cm 2, 400mJ/cm 2, 500mJ/cm 2, 600mJ/cm 2, 700mJ/cm 2, 800mJ/cm 2, 900mJ/cm 2
4, stop scanning, detect the Raman spectrum that is excited by laser second light beam 6 respectively by Raman spectrum receiving system 8, these spectrum correspond respectively to the different-energy density of as above annealing used;
5, analyze by the characteristic parameter of Raman spectrum data analysis and 9 pairs of Raman spectrums that receive of feedback system, write down TO peak position and value of a half width respectively, by formula Δd = 2 π B Δ ω TO Calculate its grain size, and determine to occur the pairing laser energy density of maximum particle size polysilicon grain.Experiment shows, with energy density 600mJ/cm 2The laser polysilicon membrane of implementing anneal have maximum relatively grain-size (400nm).
6, with above-mentioned definite pairing laser energy density (600mJ/cm of appearance maximum particle size polysilicon grain 2) another substrate is scanned the processing of annealing crystallization.Acceptance test to Raman spectrum can be carried out at any time, and undesirable when grain-size, during less than 300nm, computer 9 sounds a warning and feedback error according to the regulation of software program, makes operator make corresponding adjustment to laser energy density as granularity.
Compared with prior art, apparatus of the present invention detect in the time of can be for the preparation of polysilicon membrane online, For the preparation of polysilicon membrane provides best energy density, described detection is nondestructive testing, has test The advantages such as cost is low, detection is quick; The more important thing is that this device can accurately detect the granularity of polysilicon membrane, Improve acceptance rate and increase production capacity.

Claims (8)

1, polysilicon membrane preparation and proofing unit that a kind of grain-size is controlled, it is characterized in that by laser source (1), optical splitter (2), beam shaping system (4), polysilicon membrane substrate (5), optical focusing system (7), excited Raman spectrum receiving system (8), Raman data analysis and feedback system (9) and traverser are formed, each position component relation is as follows: described polysilicon membrane substrate (5) places on the described traverser, the laser beam of described laser source (1) output is divided into first light beam (3) and second light beam (6) by optical splitter (2), the polysilicon membrane substrate (5) that described first light beam (3) scans on traverser after beam shaping system (4) carries out laser annealing, described second light beam (6) is radiated at the polysilicon membrane substrate (5) of process laser annealing through described optical focusing system (7), excite the Raman spectrum of annealed polysilicon and received by described excited Raman spectrum receiving system (8), carry out data processing and feed back to laser source (1) by Raman data analysis and feedback system (9) then, the power of control laser source (1) output laser is to adjust laser energy density and stability thereof.
2, polysilicon membrane preparation according to claim 1 and proofing unit is characterized in that described beam shaping system (4) becomes the equally distributed strip light beam of light intensity to first beam shaping.
3, polysilicon membrane preparation according to claim 1 and proofing unit is characterized in that described optical focusing system (7) focuses on annealed polysilicon membrane with second light beam (6), spot size 0.5~1.5 μ m.
4, polysilicon membrane preparation according to claim 1 and proofing unit is characterized in that described laser source (1) is pulsed laser or continuous wave laser, wavelength region 266~1064nm.
5, polysilicon membrane preparation according to claim 1 and proofing unit is characterized in that described first light beam (3) and the splitting ratio of second light beam (6) are 95~80%: 5~20%.
6, polysilicon membrane preparation according to claim 1 and proofing unit is characterized in that described Raman spectrum receiving system (8) receives sensitivity to the spectrum of described laser source (1) wavelength region, has fluorescence shield effectiveness preferably.
7, polysilicon membrane preparation according to claim 1 and proofing unit, it is characterized in that described Raman data analysis and feedback system (9) are computers, the data of being sent into by Raman spectrum receiving system (8) are carried out data processing, and show corresponding TO peak-to-peak position, halfwidth and grain size according to the result who handles.
8, according to claim 1 to 7 each described polysilicon membrane preparation and proofing unit, it is characterized in that described substrate is a substrate of glass.
CN2008100339388A 2008-02-27 2008-02-27 Polysilicon film preparation with controllable crystal particle dimension and detection device Expired - Fee Related CN101311344B (en)

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106057701A (en) * 2016-08-08 2016-10-26 武汉华星光电技术有限公司 Polycrystalline silicon grain size measurement apparatus and polycrystalline silicon grain size measurement method
CN107119329A (en) * 2017-04-26 2017-09-01 京东方科技集团股份有限公司 A kind of crystallization method of polysilicon, crystallization apparatus and polysilicon
CN109950166A (en) * 2019-03-11 2019-06-28 武汉新芯集成电路制造有限公司 The detection method of crystallite dimension
CN111430235A (en) * 2020-03-30 2020-07-17 武汉华星光电半导体显示技术有限公司 Method for correcting energy density of laser equipment and laser system

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KR100473245B1 (en) * 2000-10-06 2005-03-10 미쓰비시덴키 가부시키가이샤 Method and apparatus for producing polysilicon film, semiconductor device, and method of manufacture thereof
JP4121735B2 (en) * 2001-01-22 2008-07-23 ソニー株式会社 Polysilicon film evaluation system
JP4135347B2 (en) * 2001-10-02 2008-08-20 株式会社日立製作所 Method for producing polysilicon film
CN1254670C (en) * 2002-11-19 2006-05-03 友达光电股份有限公司 Polysilicon film crystallization quality detecting apparatus, detecting and controlling method therefor
CN201165564Y (en) * 2008-02-27 2008-12-17 中国科学院上海光学精密机械研究所 Crystal grain size controllable polysilicon film preparation and detection device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106057701A (en) * 2016-08-08 2016-10-26 武汉华星光电技术有限公司 Polycrystalline silicon grain size measurement apparatus and polycrystalline silicon grain size measurement method
CN106057701B (en) * 2016-08-08 2019-02-19 武汉华星光电技术有限公司 The dimension measurement method of polysilicon grain size measuring device and polysilicon grain
CN107119329A (en) * 2017-04-26 2017-09-01 京东方科技集团股份有限公司 A kind of crystallization method of polysilicon, crystallization apparatus and polysilicon
CN107119329B (en) * 2017-04-26 2019-02-15 京东方科技集团股份有限公司 A kind of crystallization method of polysilicon, crystallization apparatus and polysilicon
CN109950166A (en) * 2019-03-11 2019-06-28 武汉新芯集成电路制造有限公司 The detection method of crystallite dimension
CN111430235A (en) * 2020-03-30 2020-07-17 武汉华星光电半导体显示技术有限公司 Method for correcting energy density of laser equipment and laser system

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