CN101311344A - Polysilicon film preparation with crystal particle dimension controllable and detection device - Google Patents
Polysilicon film preparation with crystal particle dimension controllable and detection device Download PDFInfo
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- CN101311344A CN101311344A CNA2008100339388A CN200810033938A CN101311344A CN 101311344 A CN101311344 A CN 101311344A CN A2008100339388 A CNA2008100339388 A CN A2008100339388A CN 200810033938 A CN200810033938 A CN 200810033938A CN 101311344 A CN101311344 A CN 101311344A
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- polysilicon membrane
- laser
- light beam
- polysilicon
- proofing unit
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 74
- 229920005591 polysilicon Polymers 0.000 title claims abstract description 72
- 238000002360 preparation method Methods 0.000 title claims abstract description 24
- 238000001514 detection method Methods 0.000 title abstract description 9
- 239000013078 crystal Substances 0.000 title description 9
- 239000002245 particle Substances 0.000 title description 3
- 238000001237 Raman spectrum Methods 0.000 claims abstract description 27
- 239000000758 substrate Substances 0.000 claims abstract description 23
- 230000003287 optical effect Effects 0.000 claims abstract description 18
- 238000001069 Raman spectroscopy Methods 0.000 claims abstract description 12
- 239000012528 membrane Substances 0.000 claims description 60
- 238000007493 shaping process Methods 0.000 claims description 12
- 238000007405 data analysis Methods 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 9
- 238000005224 laser annealing Methods 0.000 claims description 6
- 238000012545 processing Methods 0.000 claims description 6
- 239000011521 glass Substances 0.000 claims description 3
- 230000035945 sensitivity Effects 0.000 claims description 3
- 238000001228 spectrum Methods 0.000 claims description 3
- 239000010409 thin film Substances 0.000 abstract description 9
- 238000012360 testing method Methods 0.000 abstract description 3
- 238000009659 non-destructive testing Methods 0.000 abstract description 2
- 238000011897 real-time detection Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 8
- 229910021417 amorphous silicon Inorganic materials 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 6
- 238000000137 annealing Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000002425 crystallisation Methods 0.000 description 4
- 230000008025 crystallization Effects 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000007715 excimer laser crystallization Methods 0.000 description 3
- 238000005499 laser crystallization Methods 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 238000000151 deposition Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- 238000011002 quantification Methods 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
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- Recrystallisation Techniques (AREA)
Abstract
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Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN2008100339388A CN101311344B (en) | 2008-02-27 | 2008-02-27 | Polysilicon film preparation with controllable crystal particle dimension and detection device |
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CN2008100339388A CN101311344B (en) | 2008-02-27 | 2008-02-27 | Polysilicon film preparation with controllable crystal particle dimension and detection device |
Publications (2)
Publication Number | Publication Date |
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CN101311344A true CN101311344A (en) | 2008-11-26 |
CN101311344B CN101311344B (en) | 2010-08-04 |
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CN2008100339388A Expired - Fee Related CN101311344B (en) | 2008-02-27 | 2008-02-27 | Polysilicon film preparation with controllable crystal particle dimension and detection device |
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CN (1) | CN101311344B (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106057701A (en) * | 2016-08-08 | 2016-10-26 | 武汉华星光电技术有限公司 | Polycrystalline silicon grain size measurement apparatus and polycrystalline silicon grain size measurement method |
CN107119329A (en) * | 2017-04-26 | 2017-09-01 | 京东方科技集团股份有限公司 | A kind of crystallization method of polysilicon, crystallization apparatus and polysilicon |
CN109950166A (en) * | 2019-03-11 | 2019-06-28 | 武汉新芯集成电路制造有限公司 | The detection method of crystallite dimension |
CN111430235A (en) * | 2020-03-30 | 2020-07-17 | 武汉华星光电半导体显示技术有限公司 | Method for correcting energy density of laser equipment and laser system |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100473245B1 (en) * | 2000-10-06 | 2005-03-10 | 미쓰비시덴키 가부시키가이샤 | Method and apparatus for producing polysilicon film, semiconductor device, and method of manufacture thereof |
JP4121735B2 (en) * | 2001-01-22 | 2008-07-23 | ソニー株式会社 | Polysilicon film evaluation system |
JP4135347B2 (en) * | 2001-10-02 | 2008-08-20 | 株式会社日立製作所 | Method for producing polysilicon film |
CN1254670C (en) * | 2002-11-19 | 2006-05-03 | 友达光电股份有限公司 | Polysilicon film crystallization quality detecting apparatus, detecting and controlling method therefor |
CN201165564Y (en) * | 2008-02-27 | 2008-12-17 | 中国科学院上海光学精密机械研究所 | Crystal grain size controllable polysilicon film preparation and detection device |
-
2008
- 2008-02-27 CN CN2008100339388A patent/CN101311344B/en not_active Expired - Fee Related
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106057701A (en) * | 2016-08-08 | 2016-10-26 | 武汉华星光电技术有限公司 | Polycrystalline silicon grain size measurement apparatus and polycrystalline silicon grain size measurement method |
CN106057701B (en) * | 2016-08-08 | 2019-02-19 | 武汉华星光电技术有限公司 | The dimension measurement method of polysilicon grain size measuring device and polysilicon grain |
CN107119329A (en) * | 2017-04-26 | 2017-09-01 | 京东方科技集团股份有限公司 | A kind of crystallization method of polysilicon, crystallization apparatus and polysilicon |
CN107119329B (en) * | 2017-04-26 | 2019-02-15 | 京东方科技集团股份有限公司 | A kind of crystallization method of polysilicon, crystallization apparatus and polysilicon |
CN109950166A (en) * | 2019-03-11 | 2019-06-28 | 武汉新芯集成电路制造有限公司 | The detection method of crystallite dimension |
CN111430235A (en) * | 2020-03-30 | 2020-07-17 | 武汉华星光电半导体显示技术有限公司 | Method for correcting energy density of laser equipment and laser system |
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Publication number | Publication date |
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CN101311344B (en) | 2010-08-04 |
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Owner name: NAIJING ZHONGKE SHENGUANG TECHNOLOGY CO., LTD. Free format text: FORMER OWNER: SHANGHAI OPTICAL PRECISION MACHINERY INST., CHINESE ACADEMY OF SCIENCES Effective date: 20130304 |
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Free format text: CORRECT: ADDRESS; FROM: 201800 JIADING, SHANGHAI TO: 210038 NANJING, JIANGSU PROVINCE |
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Effective date of registration: 20130304 Address after: 210038 Nanjing economic and Technological Development Zone, Jiangsu Road, No. 19 Patentee after: Naijing Zhongke Shenguang Technology Co., Ltd. Address before: 201800 Shanghai 800-211 post office box Patentee before: Shanghai Optical Precision Machinery Inst., Chinese Academy of Sciences |
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Effective date of registration: 20170213 Address after: 210038 Jiangsu Province, Nanjing City Hengtai economic and Technological Development Zone Road Huizhi Technology Park building B1 room 0808 Patentee after: Nanjing Zhong An Photoelectric Technology Co., Ltd. Address before: 210038 Nanjing economic and Technological Development Zone, Jiangsu Road, No. 19 Patentee before: Naijing Zhongke Shenguang Technology Co., Ltd. |
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Granted publication date: 20100804 Termination date: 20190227 |
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