CN201165564Y - Crystal grain size controllable polysilicon film preparation and detection device - Google Patents
Crystal grain size controllable polysilicon film preparation and detection device Download PDFInfo
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- CN201165564Y CN201165564Y CNU200820055759XU CN200820055759U CN201165564Y CN 201165564 Y CN201165564 Y CN 201165564Y CN U200820055759X U CNU200820055759X U CN U200820055759XU CN 200820055759 U CN200820055759 U CN 200820055759U CN 201165564 Y CN201165564 Y CN 201165564Y
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- polysilicon membrane
- laser
- light beam
- polysilicon
- thin film
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Abstract
The utility model relates to a polysilicon thin film preparation and detection device which can control the crystal grain size. The polysilicon thin film preparation and detection device is characterized in that the device comprises a laser light source, an optical splitter, a light beam shaping system, polysilicon thin film substrates, a optical focusing system, a stimulated Raman spectrum receiving system, a Raman data analysis and feedback system and a moving worktable, the device can perform online detection while the polysilicon thin film is prepared, so the optimum energy density can be provided for the polysilicon thin film preparation, the detection is non destructive testing, which has the advantages that the testing cost is less and the detection is convenient; moreover, the grain size of the polysilicon thin film can be detected accurately by the device, the excellence ratio is improved and the production capacity is increased. The device can be suitable for the preparation of the industrialized polysilicon thin film and real time detecting, the crystal grain size can be detected accurately and the laser energy density can be monitored in real time.
Description
Technical field
The utility model relates to polysilicon, and the preparation and the proofing unit of the polysilicon membrane that particularly a kind of grain-size is controlled in order to detecting the granularity of polysilicon membrane crystallization crystal grain fast, in real time, thereby are adjusted the required optimum capacity density of laser crystallization.
Background technology
Laser crystallization has good prospects for application as the core process of low temperature polycrystalline silicon (LTPS) technology in liquid-crystal display (LCD) field.The principle of laser crystallization is that scanning makes its fusion to the amorphous silicon membrane of low temperature depositing with laser, is recrystallized into to be polysilicon membrane.Compare with at present used amorphous silicon membrane liquid crystal panel, polysilicon membrane liquid crystal panel cost is comparatively cheap, and has higher resolution, this is because the transmission speed of electronics in polysilicon is faster, quality is more good, thereby can make the size of membrane transistor littler, increase the brightness of indicating meter and reduce watt consumption.
Relatively more commonly used is excimer laser crystallization (excimer laser crystallization) technology at present, can realize the preparation of fairly large polysilicon membrane.But this technology also has very big shortcoming, as repeated relatively poor, the degree of crystallization of apparatus expensive, technology energy density is changed sensitivity etc.There are some researches show that the crystal grain increase can make grain boundary defects reduce, the conductivity of polysilicon film device also is improved.In order to obtain bigger crystal grain, high-quality polysilicon membrane, some researchists utilize green (light) laser (mainly being the neodymium laser of frequency multiplication) preparation polysilicon membrane recently, and the thin-film transistor performance of making far exceeds the level of excimer laser crystallization.
As mentioned above, the granularity of polysilicon membrane changes very sensitive to laser energy density.And because the output rating instability of excimer laser, cause the granularity of the polysilicon membrane that forms obviously inhomogeneous.This causes prepared polysilicon membrane not necessarily to have enough big grain-size, does not require to be abandoned thereby reach mobility.
Whether the method that needs a kind of objective evaluation polysilicon membrane in the production reaches requirement in order to the granularity of measuring polysilicon membrane.Utilize powerful opticmicroscope observation roughness of film traditionally, but this method depends on naked eyes, objective inadequately accurate.In addition, scanning electronic microscope (SEM) is though image is a kind of method more intuitively, directly observed and assessed by the film surface image of operator after to annealing.Yet because this detection method has destructiveness to film, and cost is higher time-consuming, is not suitable for industry so be mainly used in scientific experiment.
Summary of the invention
The purpose of this utility model is in order to remedy above-mentioned the deficiencies in the prior art, the preparation and the proofing unit of the controlled polysilicon membrane of a kind of grain-size are provided, reach the size that real-time online detects polysilicon membrane crystal grain, and adjust the required laser optimum capacity density of polycrystallization thereupon, control the grain-size of the polysilicon of polysilicon membrane effectively.
Technical solution of the present utility model is as follows:
Polysilicon membrane preparation and proofing unit that a kind of grain-size is controlled, be characterized in by laser source, optical splitter, the beam shaping system, the polysilicon membrane substrate, optical focusing system, excited Raman spectrum receiving system, Raman data analysis and feedback system and traverser are formed, each position component relation is as follows: described polysilicon membrane substrate places on the described traverser, the laser beam of described laser source output is divided into first light beam and second light beam by optical splitter, the polysilicon membrane substrate that described first light beam scans on traverser after the beam shaping system carries out laser annealing, described second light beam is radiated at the polysilicon membrane substrate of process laser annealing through described optical focusing system, excite the Raman spectrum of annealed polysilicon and received by described excited Raman spectrum receiving system, carry out data processing by Raman data analysis and feedback system then and feed back to the power that laser source control laser source is exported laser, to adjust laser energy density and stability thereof.
Described beam shaping system becomes the equally distributed strip light beam of light intensity to first beam shaping.
Described optical focusing system focuses on annealed polysilicon membrane with second light beam, spot size 0.5～1.5 μ m.
Described laser source is pulsed laser or continuous wave laser, wavelength region 266～1064nm;
The splitting ratio of described first light beam and second light beam is 95～80%: 5～20%.
Described Raman spectrum receiving system receives sensitivity to the spectrum of described laser source wavelength region, and fluorescence shield effectiveness is preferably arranged.
Described Raman data analysis and feedback system are computers, the data of being sent into by the Raman spectrum receiving system are carried out data processing, and show corresponding TO peak-to-peak position, halfwidth and grain size according to the result who handles, adjust laser output power to laser source output control signal corresponding.
Described substrate is a substrate of glass.
Principle of the present utility model is to utilize the characteristic parameter of polysilicon membrane Raman spectrum and the corresponding relation of annealing laser energy density, obtain a judge index via quantification, thereby can detect the size of crystal grain by real-time online, and adjust the required optimum capacity density of polycrystallization thereupon.
We know: excited Raman spectrum is a kind of important means that obtains structure of matter information, the laser Raman spectroscopy of describing in the utility model can more accurately be studied amorphous silicon membrane and receive the microtexture of polycrystal silicon film, as the grain-size of polysilicon membrane and degree of crystallinity etc.There are some researches show that grain size and raman spectral characteristics (position of TO main peak and halfwidth) have clear and definite corresponding relation.Crystal grain is big more, and degree of crystallinity is high more, and the TO peak position of Raman spectrum is more near the feature peak position (520cm of silicon single crystal
-1), and the halfwidth at TO peak (FWHM) is also more little.People have summed up the relation that some formula are described TO peak position and grain-size.As
Deng, wherein Δ d is a grain size, Δ ω
TOBe polysilicon TO peak position and silicon single crystal feature peak position 520cm
-1Gap, B is a constant.(deliver on the open source literature, referring to as Feng Tuanhui, Zhang Yuxiang, Wang Haiyan etc., the recrystallize technology of a-Si:H film and the Raman spectroscopic analysis of Si film, Materials Science and Engineering journal, 2005,23 (3): 463～465).With this rule is foundation, can gather the excited Raman spectrum of a series of different-energy density laser annealed polysilicon membranes, and demarcate its characteristic peak positions and halfwidth successively.Select wherein peak position near 520cm
-1And that the narrowest energy density values of halfwidth.As set energy density substrate is annealed then.This set energy density annealed polysilicon membrane can meet the polysilicon granularity requirements preferably.
Technique effect of the present utility model:
Be used to detect the device of polysilicon membrane quality in the utility model, can determine best annealed energy density with the grain-size of noncontact mode high precision objective assessment polysilicon membrane, and in time adjust the laser energy density that is used for crystallization of silicon.
Description of drawings
Fig. 1 is controlled polysilicon membrane preparation and a proofing unit synoptic diagram of the utility model grain-size.
Among the figure:
The 1-laser apparatus 2-beam splitter 3-first light beam 4-beam shaping 5-of the system polysilicon membrane substrate 6-second light beam 7-optical focusing system 8-Raman spectrum receiving system 9-Raman spectrum data is analyzed and feedback system
Solid line is represented light path among the figure, and dotted line is timberline road or annexation only.
Embodiment
The utility model is described in further detail below in conjunction with embodiment and accompanying drawing, but should not limit protection domain of the present utility model with this.
See also Fig. 1 earlier, Fig. 1 is controlled polysilicon membrane preparation and a proofing unit synoptic diagram of the utility model grain-size, as seen from the figure, polysilicon membrane preparation and proofing unit that the utility model grain-size is controlled, by laser source 1, optical splitter 2, beam shaping system 4, polysilicon membrane substrate 5, optical focusing system 7, excited Raman spectrum receiving system 8, Raman data analysis and feedback system 9 and traverser are formed, each position component relation is as follows: described polysilicon membrane substrate 5 places on the described traverser, the laser beam of described laser source 1 output is divided into first light beam 3 and second light beam 6 by optical splitter 2, the polysilicon membrane substrate 5 that described first light beam 3 scans after beam shaping system 4 on traverser carries out laser annealing, described second light beam 6 is radiated at the polysilicon membrane substrate 5 of process laser annealing through described optical focusing system 7, excite the Raman spectrum of annealed polysilicon and received by described excited Raman spectrum receiving system 8, carry out data processing and feed back to laser source 1 by Raman data analysis and feedback system 9 then, the power of control laser source 1 output laser is to adjust laser energy density and stability thereof.
Be based on the variation relation of the TO peak position of the thin film actuated Raman spectrum of annealed polycrystalline silicon in the utility model,, can determine the pairing laser energy density of largest grain size by the Raman spectrum of analysed film with halfwidth and grain-size.Concrete implementation step is as follows:
1, annealing laser source 1 is the Nd:YAG pulsed laser (wavelength 532nm) of two frequencys multiplication, pulsewidth 30ns; First light beam 3 behind optical splitter 2 and the strength ratio of second light beam 6 are 90%: 10%;
2, the substrate 5 of amorphous silicon membrane that provides a low temperature depositing is positioned over movably on the worktable; Substrate in this example is healthy and free from worry 1737 glass of thickness 1.1mm, by the method for plasma reinforced chemical vapour deposition (PECVD), deposits the SiO of 200nm successively on substrate
2With the 100nm amorphous silicon membrane;
3, laser is through first light beam 3 of optical splitter, after beam shaping system 4, become the equally distributed bar shaped light beam of a light intensity, this light beam scans anneal with a series of different energy densities to the different zones of described amorphous silicon membrane, for example, and from 100mJ/cm
2～1000mJ/cm
2Choose different-energy density in the scope, as choose 200mJ/cm
2, 300mJ/cm
2, 400mJ/cm
2, 500mJ/cm
2, 600mJ/cm
2, 700mJ/cm
2, 800mJ/cm
2, 900mJ/cm
2
4, stop scanning, detect the Raman spectrum that is excited by laser second light beam 6 respectively by Raman spectrum receiving system 8, these spectrum correspond respectively to the different-energy density of as above annealing used;
5, analyze by the characteristic parameter of Raman spectrum data analysis and 9 pairs of Raman spectrums that receive of feedback system, write down TO peak position and value of a half width respectively, by formula
Calculate its grain size, and determine to occur the pairing laser energy density of maximum particle size polysilicon grain.Experiment shows, with energy density 600mJ/cm
2The laser polysilicon membrane of implementing anneal have maximum relatively grain-size (400nm).
6, with above-mentioned definite pairing laser energy density (600mJ/cm of appearance maximum particle size polysilicon grain
2) another substrate is scanned the processing of annealing crystallization.Acceptance test to Raman spectrum can be carried out at any time, and undesirable when grain-size, during less than 300nm, computer 9 sounds a warning and feedback error according to the regulation of software program, makes operator make corresponding adjustment to laser energy density as granularity.
Examine online when compared with prior art, the utility model device can be for the preparation of polysilicon membrane Survey, for the preparation of polysilicon membrane provides best energy density, described detection is nondestructive testing, has The advantages such as testing cost is low, detection is quick; The more important thing is that this device can accurately detect polysilicon membrane Granularity improves acceptance rate and increases production capacity.
Claims (8)
1, polysilicon membrane preparation and proofing unit that a kind of grain-size is controlled, it is characterized in that by laser source (1), optical splitter (2), beam shaping system (4), polysilicon membrane substrate (5), optical focusing system (7), excited Raman spectrum receiving system (8), Raman data analysis and feedback system (9) and traverser are formed, each position component relation is as follows: described polysilicon membrane substrate (5) places on the described traverser, the laser beam of described laser source (1) output is divided into first light beam (3) and second light beam (6) by optical splitter (2), the polysilicon membrane substrate (5) that described first light beam (3) scans on traverser after beam shaping system (4) carries out laser annealing, described second light beam (6) is radiated at the polysilicon membrane substrate (5) of process laser annealing through described optical focusing system (7), excite the Raman spectrum of annealed polysilicon and received by described excited Raman spectrum receiving system (8), carry out data processing and feed back to laser source (1) by Raman data analysis and feedback system (9) then, the power of control laser source (1) output laser is to adjust laser energy density and stability thereof.
2, polysilicon membrane preparation according to claim 1 and proofing unit is characterized in that described beam shaping system (4) becomes the equally distributed strip light beam of light intensity to first beam shaping.
3, polysilicon membrane preparation according to claim 1 and proofing unit is characterized in that described optical focusing system (7) focuses on annealed polysilicon membrane with second light beam (6), spot size 0.5～1.5 μ m.
4, polysilicon membrane preparation according to claim 1 and proofing unit is characterized in that described laser source (1) is pulsed laser or continuous wave laser, wavelength region 266～1064nm;
5, polysilicon membrane preparation according to claim 1 and proofing unit is characterized in that described first light beam (3) and the splitting ratio of second light beam (6) are 95～80%:5～20%.
6, polysilicon membrane preparation according to claim 1 and proofing unit is characterized in that described Raman spectrum receiving system (8) receives sensitivity to the spectrum of described laser source (1) wavelength region, has fluorescence shield effectiveness preferably.
7, polysilicon membrane preparation according to claim 1 and proofing unit, it is characterized in that described Raman data analysis and feedback system (9) are computers, the data of being sent into by Raman spectrum receiving system (8) are carried out data processing, and show corresponding TO peak-to-peak position, halfwidth and grain size according to the result who handles.
8, according to claim 1 to 7 each described polysilicon membrane preparation and proofing unit, it is characterized in that described substrate is a substrate of glass.
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| CNU200820055759XU CN201165564Y (en) | 2008-02-27 | 2008-02-27 | Crystal grain size controllable polysilicon film preparation and detection device |
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| CNU200820055759XU CN201165564Y (en) | 2008-02-27 | 2008-02-27 | Crystal grain size controllable polysilicon film preparation and detection device |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101311344B (en) * | 2008-02-27 | 2010-08-04 | 中国科学院上海光学精密机械研究所 | Polysilicon film preparation with controllable crystal particle dimension and detection device |
| CN103323444A (en) * | 2013-05-27 | 2013-09-25 | 江苏大学 | Method for discriminating disorder degree of polysilicon film |
| CN107039315A (en) * | 2017-04-12 | 2017-08-11 | 武汉华星光电技术有限公司 | Grain size monitoring device and grain size monitoring method in producing line |
| CN114654116A (en) * | 2022-04-22 | 2022-06-24 | 武汉大学 | Fixed-point machining device and method for nanometer holes of optical drive nanoparticles |
-
2008
- 2008-02-27 CN CNU200820055759XU patent/CN201165564Y/en not_active Expired - Lifetime
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101311344B (en) * | 2008-02-27 | 2010-08-04 | 中国科学院上海光学精密机械研究所 | Polysilicon film preparation with controllable crystal particle dimension and detection device |
| CN103323444A (en) * | 2013-05-27 | 2013-09-25 | 江苏大学 | Method for discriminating disorder degree of polysilicon film |
| CN107039315A (en) * | 2017-04-12 | 2017-08-11 | 武汉华星光电技术有限公司 | Grain size monitoring device and grain size monitoring method in producing line |
| CN107039315B (en) * | 2017-04-12 | 2019-11-08 | 武汉华星光电技术有限公司 | Grain size monitoring device and grain size monitoring method in producing line |
| CN114654116A (en) * | 2022-04-22 | 2022-06-24 | 武汉大学 | Fixed-point machining device and method for nanometer holes of optical drive nanoparticles |
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Legal Events
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| AV01 | Patent right actively abandoned |
Granted publication date: 20081217 Effective date of abandoning: 20080227 |
|
| AV01 | Patent right actively abandoned |
Granted publication date: 20081217 Effective date of abandoning: 20080227 |