CN107109532A - Corrosion-resistant and moisture-proof the nickeliferous closing line based on copper - Google Patents
Corrosion-resistant and moisture-proof the nickeliferous closing line based on copper Download PDFInfo
- Publication number
- CN107109532A CN107109532A CN201580062949.7A CN201580062949A CN107109532A CN 107109532 A CN107109532 A CN 107109532A CN 201580062949 A CN201580062949 A CN 201580062949A CN 107109532 A CN107109532 A CN 107109532A
- Authority
- CN
- China
- Prior art keywords
- line
- core
- scope
- ppm
- copper
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C9/00—Alloys based on copper
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/01—Layered products comprising a layer of metal all layers being exclusively metallic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/01—Layered products comprising a layer of metal all layers being exclusively metallic
- B32B15/018—Layered products comprising a layer of metal all layers being exclusively metallic one layer being formed of a noble metal or a noble metal alloy
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/02—Making non-ferrous alloys by melting
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/02—Making non-ferrous alloys by melting
- C22C1/03—Making non-ferrous alloys by melting using master alloys
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C9/00—Alloys based on copper
- C22C9/06—Alloys based on copper with nickel or cobalt as the next major constituent
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/08—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of copper or alloys based thereon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1646—Characteristics of the product obtained
- C23C18/165—Multilayered product
- C23C18/1651—Two or more layers only obtained by electroless plating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1646—Characteristics of the product obtained
- C23C18/165—Multilayered product
- C23C18/1653—Two or more layers with at least one layer obtained by electroless plating and one layer obtained by electroplating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/02—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings only including layers of metallic material
- C23C28/023—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings only including layers of metallic material only coatings of metal elements only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/04—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material
- C23C28/042—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material including a refractory ceramic layer, e.g. refractory metal oxides, ZrO2, rare earth oxides
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/10—Electroplating with more than one layer of the same or of different metals
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/06—Wires; Strips; Foils
- C25D7/0607—Wires
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/43—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/43—Manufacturing methods
- H01L2224/438—Post-treatment of the connector
- H01L2224/43848—Thermal treatments, e.g. annealing, controlled cooling
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/4501—Shape
- H01L2224/45012—Cross-sectional shape
- H01L2224/45014—Ribbon connectors, e.g. rectangular cross-section
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45147—Copper (Cu) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/4554—Coating
- H01L2224/45565—Single coating layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/4554—Coating
- H01L2224/4557—Plural coating layers
- H01L2224/45572—Two-layer stack coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/4554—Coating
- H01L2224/45599—Material
- H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45639—Silver (Ag) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/4554—Coating
- H01L2224/45599—Material
- H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45644—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/4554—Coating
- H01L2224/45599—Material
- H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45663—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
- H01L2224/45664—Palladium (Pd) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/4554—Coating
- H01L2224/45599—Material
- H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45663—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
- H01L2224/45669—Platinum (Pt) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Wire Bonding (AREA)
- Electroplating Methods And Accessories (AREA)
Abstract
A kind of line including core, the core includes the following or is made up of the following：(a) nickel, its amount is in from 0.005wt. % to 5wt. % scope, (b) optionally, silver, its amount is in from 0.005wt. % to 1wt. % scope, c) copper, its amount is in from 94wt. % to 99.98wt. % scope, and (d) 0wt. ppm to 100wt. ppm other components, all amounts wherein in terms of wt. % and wt. ppm are based on the gross weight of the core, wherein described core has the average crystal grain size in the scope from 1.5 μm to 30 μm, the mean size is determined according to line intercept method, wherein described line has the average diameter in the scope from 8 μm to 80 μm.
Description
The present invention relates to a kind of including copper core, the line that rugosity is 8 μm to 80 μm, the copper core includes：Copper；At nickel, its amount
In from 0.005wt.-% (weight-%, weight %) into 5wt.-% scope；And optionally, silver, its amount be in from
In 0.005wt.-% to 1wt.-% scope, wherein all amounts in terms of wt.-% are based on the gross weight of the core；Wherein
The copper core has the average crystal grain size in the scope from 1.5 μm to 30 μm.It is used for the invention further relates to one kind
The method for manufacturing such a line.
Use of the closing line in electronic application and microelectronic applications is well-known the present art.Although opening
Beginning closing line is to be made of gold, but the current material using less costliness, such as copper.Although copper cash provides very good conduction
Property and thermal conductivity, but copper cash engagement still have challenge.In addition, copper cash is susceptible to corrode and aoxidized.
For thread geometry, the most frequently used person is closing line with circular cross section and with generally rectangular in transverse cross-section
Bonding ribbon.Two kinds of thread geometry is respectively provided with the advantage for making it can be used for application-specific.
Some newest research and development are directed to the closing line with copper core.As core material, copper is selected because of high conductivity.Seek
The different dopant of copper product is looked for so that engagement properities optimization.For example, US 7,952,028 B2 describe some with a large amount of
The different p-wires based on copper of different dopant and concentration.
However, with regard to closing line in itself and for joint technology, persistently requiring further improvement engagement line technology.
Therefore, it is an object of the present invention to provide improved closing line.
It is another object of the present invention to provide the closing line for showing splendid engageable property for stitch bond.
It is another object of the present invention to provide connecing with improved reliability and improved corrosion resistance and moisture-proof
Zygonema.
It is another object of the present invention to provide the closing line for showing improved reliability and engageable property for ball bond.
It is another object of the present invention to provide show improved engaged ball circularity and concentricity for the conjunction of the ball wedge joint
Closing line.
It has been found that the line of the present invention at least solves to improve the target of corrosion resistance and moisture-proof.In addition, having found for making
The method for making these lines.
The subject matter of the forming of category technical scheme facilitates the solution of above-mentioned target.The forming of category technical scheme it is attached
Belong to sub- technical scheme and represent the preferred embodiments of the present invention, the subject matter of the attached sub- technical scheme also promotes to solve institute above
The target referred to.
The first aspect of the present invention is a kind of line including core, and the core includes the following or is made up of the following
(a) nickel, its amount is in from 0.005wt.-% to 5wt.-%, preferably 0.1wt.-% to 0.6wt.-% or even
In 0.45wt.-% to 0.55wt.-% scope,
(b) optionally, it is silver-colored, its amount is in from 0.005wt.-% to 1wt.-%, preferably 0.1wt.-% to
In 0.6wt.-% or even 0.45wt.-% to 0.55wt.-% scope,
(c) copper, its amount be in from 94wt.-% to 99.98wt.-%, preferably 98.5wt.-% to 99.6wt.-% or
Even in 99.4wt.-% to 99.6wt.-% scope, and
(d) 0wt.-ppm (weight-ppm, weight ppm) arrives 100wt.-ppm other components,
All amounts wherein in terms of wt.-% and wt.-ppm are based on the gross weight of the core,
Wherein described core has the average crystal grain size in the scope from 1.5 μm to 30 μm, and the mean size is
Determined according to line intercept method,
Wherein described line has in the average diameter from 8 μm to 80 μm or in even 12 μm to 55 μm of scope.
The line is preferably used for the closing line of the engagement in microelectronic device.The line is preferably integral type thing
Part.Shape that is known and occurring in that numerous lines for being applied to the present invention.In cross, preferable shape is circular, ellipse
And rectangular shape.
Average diameter is obtained by " size measurement method ".According to such a method, it is determined that the line of defined length
Physical weight.Based on this weight, the density (density of copper of wire material is used：ρCu=8.92g/cm3) calculate the diameter of line.Will
Average diameter is calculated as the arithmetic mean of instantaneous value of five measured values obtained by when cutting certain line five times.
For the present invention, term " closing line " includes the cross section of all shapes and all conventional linear diameters, but tool
The closing line for having circular cross section and thin diameter is preferred.
For determining that the line intercept method of average crystal grain size is the practice of standard metallographic.Herein, perpendicular to the direction pair of line
Line is cut, and etches resulting cross section.In the context of the present invention, be defined as can be by crystalline substance for the size of crystal grain
Most elder in all straight line portions of grain.Average crystal grain size is at least seven crystal grain measured values in core/block materials
Arithmetic mean of instantaneous value.Test is performed according to ASTM E112-96 standards (the 16.3rd chapter, page 13).
As noted above, the nickel and (c) 94wt.-% that core includes (a) 0.005wt.-% to 5wt.-% are arrived
99.98wt.-% copper.Core may or may not include component (b), i.e., silver-colored.If core include silver, then silver-colored amount be in from
In 0.005wt.-% to 1wt.-% scope.
The core of the present invention includes (d) 0wt.-ppm to 100wt.-ppm other components.The low amounts of these other components
Ensure the well reproduced of linear matter.In the context of the present invention, other components (are usually also referred to as " inevitably miscellaneous
Matter ") it is derived from the trace chemical elements and/or chemical combination of impurity present in the original material for or from line manufacturing process
Thing.The example of this little other component is：Mn、Pt、Cr、Ca、Ce、Mg、La、Al、B、Zr、Ti、S、Fe.
In other words, the core includes the following or is made up of the following
(a) nickel, its amount is in from 0.005wt.-% to 5wt.-%, preferably 0.1wt.-% to 0.6wt.-% or even
In 0.45wt.-% to 0.55wt.-% scope,
(b) silver-colored, its amount is in from 0.005wt.-% to 1wt.-%, preferably 0.1wt.-% to 0.6wt.-% or even
In 0.45wt.-% to 0.55wt.-% scope,
(c) copper, its amount be in from 94wt.-% to 99.98wt.-%, preferably 98.5wt.-% to 99.6wt.-% or
Even in 99.4wt.-% to 99.6wt.-% scope, and
(d) 0wt.-ppm to 100wt.-ppm other components,
Or
(a) nickel, its amount is in from 0.005wt.-% to 5wt.-%, preferably 0.1wt.-% to 0.6wt.-% or even
In 0.45wt.-% to 0.55wt.-% scope,
(b) without silver,
(c) copper, its amount be in from 94wt.-% to 99.98wt.-%, preferably 98.5wt.-% to 99.6wt.-% or
Even in 99.4wt.-% to 99.6wt.-% scope, and
(d) 0wt.-ppm to 100wt.-ppm other components,
All amounts wherein in terms of wt.-% and wt.-ppm are based on the gross weight of core.
According to above-mentioned, embodiments of the invention are a kind of lines including the following：(a) nickel, (b) is optionally, silver-colored；And
(c) copper, as disclosed.Other components present in core are generally not individually added.The presence of other components is derived from
Impurity present in one or more of nickel, silver and copper.
In one embodiment, core of the invention includes other components less than following amount：
(i) Mn, its<15wt.-ppm；
(ii) any one of Pt, Cr, Ca, Ce, Mg, La, Al, B, Zr, Ti, its is each<2wt.-ppm；
(iii) any one of S, Fe, its is each<10wt.-ppm.
Formed core material more preferably meet in above-mentioned limit value at least both, formed core material most preferably meet
Institute's finite value.
In one embodiment, core includes element phosphor as dopant, the gross weight based on core, at the amount of the element phosphor
In the scope from 40wt.-ppm to 80wt.-ppm.
In the context of the present invention, core is defined as the homogeneous region of block materials.Because any block materials have all the time
Surface region of different nature can be showed to a certain extent by having, therefore the property of core is interpreted as the homogeneous region of block materials
Property.The surface in block materials region can be different in form, composition (for example, oxygen content) and other characteristic aspects.Institute
State the outer surface that surface can be core.In alternative solution, it can be core and the interface being stacked and placed between the coating on core
Region.
In the context of the present invention, term is " stacked " is used to describe the first items (for example, copper core) relative to the second thing
The relative position of item (for example, coating).It is " stacked " to characterize, other items (such as intermediate layer) can (but without) be arranged in the first thing
Between item and the second items.Preferably, the second items are stacked and placed in the first items at least in part, for example, at least 30%,
50%th, 70% or at least 90% (it is individually for the total surface of the first items).Most preferably, the second items are complete
It is stacked and placed in the first items.
In the context of the present invention, term " intermediate layer " refers to the line region between core and coating.In the region, deposit
In the combination of the material of both core and coating.
In the context of the present invention, term " thickness " is big on the direction perpendicular to the longitudinal axis of core for defining layer
Small, the layer is stacked and placed on the surface of core at least in part.
In one embodiment, the ratio between the average crystal grain size in core diameter and core be in from 2 to 14 or even 2 to
In 7 scope.
In one embodiment, the average diameter of line is in the scope from 15 μm to 28 μm.In this case, it is flat in core
Equal grain size is preferably in the scope from 1.5 μm to 6 μm.
In another embodiment, the average diameter of line be in from>In 28 μm to 38 μm of scope.In this case, in core
Average crystal grain size be preferably in the scope from 2 μm to 10 μm.
In another embodiment, the average diameter of line be in from>In 38 μm to 50 μm of scope.In this case, in core
Average crystal grain size be preferably in the scope from 5 μm to 15 μm.
In another embodiment, the average diameter of line be in from>In 50 μm to 80 μm of scope.In this case, in core
Average crystal grain size be preferably in the scope from 7 μm to 30 μm.
In one embodiment, core has surface, and its floating coat is stacked and placed on the surface of core.
In one embodiment, the quality of coating is not more than 2.5wt.-%, being preferably not more than 2wt.-% or smaller, (its is each
Naturally for the gross mass of core).When there is coating, it generally has 0.1wt.-% or bigger or 0.5wt.-%
Or bigger minimum mass (it is individually for the gross mass of core).Using low amounts material as coating save by
The characteristic that the material of core is defined.On the other hand, coating is that line surface assigns particular characteristics, such as inert to environment, resistance to
Corrosivity, improved engageable property etc..For example, for the line that average diameter is 18 μm, the thickness of coating is in from 60nm
Into 70nm scope.For example, for the line of the average diameter with 25 μm, coating can have be in from 90nm to
Thickness in 100nm scope.
In one embodiment, coating is made up of the element selected from the group being made up of palladium, platinum and silver.The coating can be
The individual layer of one of the element.In another embodiment, the coating can be several multilayers through stacked adjacent layer, its
In each layer by being made selected from a kind of element of group being made up of palladium, platinum and silver.It is as a part of each layer of coating
Individually deposited from one of above-mentioned simple metal element.Common technique for depositing these elements on core is plating (example
Such as plating and electrodeless plating), from gas-phase depositing materials (such as sputter, ion plating, vacuum evaporation and physical vapour deposition (PVD))
And from fusion sediment material.
In one embodiment, another coating is stacked and placed on the coating.In one embodiment, the quality of another coating is little
In 0.2wt.-%, preferably not more than 0.1wt.-% (it is individually for the gross mass of core).
For example, for the line of the average diameter with 18 μm, the thickness of another coating is in from 2nm to 4nm
Scope in.For example, for the line of the average diameter with 25 μm, another coating can have from 3.5nm to 5.5nm
Thickness.
In one embodiment, another coating is layer gold.
In one embodiment, the feature of line of the invention is at least that one of following characteristics：
α) corrosion resistance has the value that at most 0% engaged ball is peeled off；Referring to " method of testing G " as described below.
β) moisture-proof has the value that at most 0% engaged ball is peeled off；Referring to " method of testing I " as described below.
γ) hardness of core is not more than 120HV, preferably not more than 115HV or no more than 110HV；Referring to following article institute
" the method for testing J " stated.
δ) the technique window ara of stitch bond has at least 40 μm g's or at least 90 μm g or at least 120 μm g
Value, each value be it is online with 18 μm of average diameter on the premise of provide；Referring to chapters and sections " method of testing as described below
C”。
ε) resistivity of line is not more than 1.80 μ Ω cm.
ζ) average engaged ball circularity has at most 0.0025 μm or at most 0.002 μm or at most 0.0018 μm of value, often
One value be it is online there is 18 μm of average diameter on the premise of provide；Referring to chapters and sections " method of testing E " as described below.
η) average engaged ball concentricity has at most 0.00056 μm or at most 0.0005 μm or at most 0.0004 μm
Value, each value be it is online with 18 μm of average diameter on the premise of provide；Referring to chapters and sections " method of testing as described below
E”。
The second aspect of the present invention is a kind of method for being used to manufacture the line in any one of embodiment disclosed above.
In its most typically embodiment, methods described is at least comprised the following steps that
(1) forerunner's items are provided, forerunner's items include the following or are made up of the following：
(a) nickel, its amount is in from 0.005wt.-% to 5wt.-%, preferably 0.1wt.-% to 0.6wt.-% or even
In 0.45wt.-% to 0.55wt.-% scope,
(b) optionally, it is silver-colored, its amount is in from 0.005wt.-% to 1wt.-%, preferably 0.1wt.-% to
In 0.6wt.-% or even 0.45wt.-% to 0.55wt.-% scope,
(c) copper, its amount be in from 94wt.-% to 99.98wt.-%, preferably 98.5wt.-% to 99.6wt.-% or
Even in 99.4wt.-% to 99.6wt.-% scope, and
(d) 0wt.-ppm to 100wt.-ppm other components,
All amounts wherein in terms of wt.-% and wt.-ppm are based on the gross weight of forerunner's items,
(2) by forerunner's items elongation to form line predecessor, until obtain core want diameter untill；And
(3) to being annealed in the described of completion processing step (2) acquisition afterwards through extending line predecessor.
As forerunner's items provided in processing step (1) can be by using the desired amount nickel and optionally silver copper is entered
Row alloying and/or doping and obtain.By producing the melt of the component and copper and making the melt cooling to form one piece
Homogeneity forerunner items based on copper realize alloying and doping.Generally, it is, for example, diametrically that 2mm is arrived that such a forerunner's items, which are,
25mm and length are, for example, the form of 5m to 100m bar.Such a bar can be by casting bag in the appropriate mould with room temperature
Include the following or be made up of the following copper alloy melt, be subsequently then cooled off and solidify to be made：(a) nickel, its
Amount in scope from 0.005wt.-% to 5wt.-%, (b) optionally, silver, its amount be in from 0.005wt.-% to
In 1wt.-% scope, (c) copper, its amount is in the scope from 94wt.-% to 99.98wt.-%, and (d) 0wt.-ppm is arrived
100wt.-ppm other components, wherein all amounts in terms of wt.-% and wt.-ppm are based on the gross weight of copper alloy melt.
Copper alloy can be prepared by common process known to the technical staff of field of metal alloy technology in itself, for example, pass through
By copper, nickel and optionally silver be fused together with wanted ratio.Consequently, it is possible to using conventional copper-nickel and copper-silver foundry alloy.
For example, smelting process can be performed using induction furnace, and it is favourable to work under vacuo or under inert gas atmosphere.
Used material can have such as 99.99wt.-% and higher purity level.
If existed on line as disclosed in for some embodiments in the embodiment of first aspect present invention one or more
Individual coating, then these coatings, which are preferably, is applied to line predecessor.Those skilled in the art is known how with for line
Thickness (that is, after forerunner's items are extended together with one or more coatings for line predecessor) disclosed in embodiment is calculated
The thickness of this little coating in forerunner's items is to obtain the coating.As having revealed that above, it is known that for according to the embodiment
Numerous technologies of the coating of material are formed on copper or copper alloy surface.Optimization technique is plating (such as plating and electrodeless plating
Cover), from gas-phase depositing materials (such as sputter, ion plating, vacuum evaporation and physical vapour deposition (PVD)) and from fusion sediment material
Material.
As disclosed in for some embodiments in the embodiment of first aspect present invention, to be stacked individual layer or many to core
Layer metal coating, once reaching a certain predecessor diameter in such as 80 μm to 200 μm of scope, interrupts processing step
(2) it is favourable.Then, single or multiple lift metal coating for example can be applied by one or more electroplating technology steps.This
Afterwards, continue processing step (2), until obtain core want and final diameter untill.
In processing step (2), by the elongation of forerunner's items to form line predecessor, until obtaining a diameter of of core
Only.It is known to by forerunner's items extend with formed line predecessor numerous technologies and its be revealed as in the context of the present invention
Useful.Optimization technique be roll prolong, swaged forging, die drawing etc., wherein die drawing is especially preferred.In later case, with several works
Skill step draw forerunner's items, until reach core want and final diameter untill.
Core being wanted and during final diameter can be at the scope from 8 μm to 80 μm or is preferably at from 12 μm to 55 μm
Scope in.Such a line die drawing technique is that those skilled in the art is well-known.
Conventional tungsten carbide and diamond drawing plate can be used, and can support to draw using conventional drawing lubricant.Citing comes
Say, forerunner's items can be drawn with 8 Main Stages, and each stage has 15 to 25 processing steps, wherein being drawn each
In processing step processed, the scope from 6% to 18% by the length elongation of forerunner's items is performed.For each drawing process step,
Elongation % may be the same or different.
, will be in completion processing step (2) acquisition afterwards through extending line preferably in tube furnace in processing step (3)
Predecessor is annealed.Preferably, the annealing is strand annealing (final annealing), and it is quick with high reproducibility for allowing for one kind
The continuous processing of production line.Strand is annealed it is meant that making line predecessor move through preferably tubular annealing stove and leaving
State and annealed in a dynamic fashion while being wound on spool after stove.Annealing is in such as 440 DEG C to 700 DEG C of scope
Target temperature under perform up to 0.1 second to 0.4 second, preferably perform and reach under the target temperature in 470 DEG C to 650 DEG C of scope
0.1 second to 0.3 second；What these temperature/time conditions allowed for or adjusted core wants average crystal grain size.
Annealing is performed typically by that will be pulled through conventional annealing stove through elongation line predecessor, and the annealing furnace is usual
In the cylindrical tube with given length form and have under given annealing speed and define temperature distribution history, it is described to give
Determine annealing speed and can be the choosing in the scope for example from 4 ms/min to 30 ms/min or from 14 ms/min to 16 ms/min
Select.Consequently, it is possible to can define and set annealing time/target temperature parameter.
On embodiments of the invention, it was found that the annealing carried out at a temperature of less than maximum elongation rate temperature can be produced
Raw beneficial linear matter, because line morphology can be influenceed in a positive manner.It has moreover been found that annealing temperature is chosen above
Maximum elongation rate temperature maintains annealing time constant to have further advantage simultaneously.For example, it can be used this manufacturing theory will
The average crystal grain size of line is adjusted to (such as) larger average crystal grain size.Adjusted by this, can influence other in a positive manner
Property, for example, line hardness, ball bond behavior etc..
Therefore, in one embodiment, annealing is performed at a temperature of higher than maximum elongation rate temperature, and its center line is in annealing
Elongation values afterwards are not more than the 98% of maximum elongation rate value.For example, processing step (3) can be than maximum elongation rate
Temperature TΔL(max)Performed at a temperature of at least high 10 DEG C, preferably at least high 50 DEG C or at least high 80 DEG C.Generally, processing step
(3) temperature in compares TΔL(max)Height is no more than 200 DEG C.Maximum elongation rate temperature TΔL(max)It is in difference by test sample (line)
At a temperature of elongation when being broken determine.Data point is collected with curve map, it shows the elongation become with temperature (DEG C)
(in terms of %).Curve obtained figure is commonly referred to as " annealing curve ".In the situation of the line based on copper, observe elongation (in terms of %)
Reach temperature during maximum.This is maximum elongation rate temperature TΔL(max).Example is shown in Fig. 1, it is shown according to sample 3
The exemplary annealing curve of 18 μm of copper cash with nickel alloy of (table 1).Annealing temperature is the variable parameter of x-axis.The curve
The fracture load (BL, in gram) of figure displaying line and the measured values of elongation (EL, in terms of %).Determined by extension test
Elongation.In shown example, elongation measurement value shows about 10% typical local maximum, and this is at about 470 DEG C
Annealing temperature under realize.If being not at a temperature of this maximum elongation rate but in 560 DEG C of (its ratios according to the line of sample 3
Maximum elongation rate temperature is high 90 DEG C) under anneal, then result is about 9.8% elongation values, and it is lower than maximum elongation rate value super
Cross 2%.
The annealing can be to be performed in inertia or reducing atmosphere.The inert atmosphere and reducing atmosphere of numerous types are herein
It is known and for cleaning annealing furnace in item technology, the annealing furnace is typically tubular annealing stove.In known inert atmosphere,
Nitrogen is preferred.In known reducing atmosphere, hydrogen is preferred.Another preferred reducing atmosphere is hydrogen nitrogen mixture.It is preferred that hydrogen nitrogen
Mixture is 90vol.-% to 98vol.-% nitrogen and therefore 2vol.-% to 10vol.-% hydrogen, wherein total vol.-% is
100vol.-%.It is preferred that nitrogen/hydrogen mixture is equal to 93/7,95/5 and 97/3vol.-%/vol.-%, it is each based on mixing
The cumulative volume of thing.If some parts on line surface are easy to be aoxidized (if for example, the copper of line is exposed by the oxygen in air
In its surface), then apply reducing atmosphere to be especially preferred in annealing.With the inert gas or reducing gas of the type
Cleaned preferably with 43min-1To 125min-1, more preferably 43min-1To 75min-1, most preferably 50min-1Arrive
63min-1Scope in gas exchange rate (=specific gas flow rate [liter/min]:Inner furnace body accumulates [liter]) perform.
It is believed that the composition (it is identical with the composition of finished product core) of forerunner's items material during processing step (3) with accounting for
The unique combination of leading technological parameter is essential for the line for obtaining the present invention.The preferred compositions of the technological parameter
It is：500 DEG C to 650 DEG C of target temperature, up to 0.1 second to 0.3 second, is preferably arrived further combined with using 90vol.-%
98vol.-% nitrogen/2vol.-% to 10vol.-% hydrogen mixtures are as gas is cleaned, with 50min-1To 63min-1Model
Gas exchange rate in enclosing.
After processing step (3) is completed, that is, complete the line of the present invention., will be described in order to fully benefit from its property
It is favourable that line, which is immediately available for wire bonding application (i.e., without delay, for example, being no more than after processing step (3) is completed in 7 days),
's.Or, in order to keep the wide line joint technology window property of line and in order to prevent it from being aoxidized or other chemical erosions, generally exist
Processing step (3) is completed afterwards immediately (i.e., without delay, for example, after processing step (3) is completed<1 hour to 5 hours
It is interior) by product line be wound and vacuum sealing and then storage for being further used as closing line.Entered with vacuum sealing condition
Row storage is not to be exceeded 6 months.After vacuum sealing is opened, line should be used for wire bonding in no more than 7 days.
Preferably, all processing steps (1) to (3) and winding and vacuum sealing be in clean-room condition (US FED
STD209E clean room standards, 1k standards) under perform.
The third aspect of the present invention be it is a kind of can by according to a second aspect of the present invention or embodiment method and obtain
Line.Have found, the line is highly suitable as the closing line in wire bonding application.Wire bonding technology is the technology of art
Personnel are well-known.In online engaging process, be usually formed ball bond (the first engagement) and stitch bond (the second engagement,
The wedge joint is closed).During engaging and being formed, under the support of applied scouring amplitude (generally by μm in units of measure), apply certain
One power (is generally measured) in grams.Difference applied in online joint technology between the upper limit and lower limit of power is with applying wiping
The poor mathematical product washed between the upper limit of amplitude and lower limit defines wire bonding process window：
(upper limit of exerted forces-lower limits of exerted forces) (upper limit for applying scouring amplitude-apply scouring amplitude
Lower limit)=wire bonding process window.
Wire bonding process window, which defines to allow to be formed, meets specification (that is, by conventionally test (as conventional tensile test, ball are cut
Power test and ball tensile test, only list herein several)) wire bonding power/scouring amplitude combinations area.
For commercial Application, for the reason for wire bonding technique robustness, be desired to have the wide line joint technology window (using g as
The power of unit to by μm in units of scouring amplitude).The line of the present invention shows comparatively wide wire bonding process window.For example,
For stitch bond, the line of a diameter of 18 μm of the present invention shows the wire bonding work in such as 40 μm to 120 μm of scope
Skill window.
The following non-limiting examples explanation present invention.
Example
Method of testing A. to J.
All tests and measurement are carried out under T=20 DEG C and relative humidity RH=50%.
A. average crystal grain size is drawn by line intercept method：
Grain size is determined using standard Metallographic Techniques (ASTM E112-96, the 16.3rd chapter, page 13).To core
Sample carries out cutting and is then etched.In situation of the present invention, 2g FeCl are used3And the dense HCl of 6ml are in 200ml deionizations
Solution in water is etched.Intercept principle to determine grain size according to line.In the context of the present invention, the size of crystal grain
It is defined as the most elder in all straight line portions by crystal grain.Measured average crystal grain size is the crystal grain in core material
The arithmetic mean of instantaneous value of at least seven measured values.
B. elongation (EL)：
Use the tensile property of Instron-5300 instrument test lines.With 1 inch/minute speed in 10 inch gauge lengths
It is interior that line is tested.The load and elongation when fractureing (fracture) are obtained according to ASTM standard F219-96.Elongation is line
The difference (△ L/L) of length before extension test and afterwards, it is that extension stress strain curve figure is calculated according to recorded load
Go out.
C. stitchbonding process window ara：
The measurement to engaging process window area is carried out by standardization program.P-wire is to use KNS-iConn connectors
Instrument (Kulicke ＆Soffa Industry Co., Ltd, Washington fort, Pennsylvania, America (Kulicke＆Soffa Industries Inc,
Fort Washington, PA, USA)) and engage.Second engagement (stitch bond) technique window ara is used in engagement
Power the upper limit and lower limit between difference and applied scouring amplitude the upper limit and lower limit between poor product, wherein obtained by engage must
Some tensile test specifications must be met, sticking place nothing but on the pulling force, lead such as 2.5 grams.Technique window values are based on having 18 μm
Average diameter line, the lead finger that its center line is engaged to is made up of silver.
Four turnings of process window are exported by overcoming following two chife failure models：
(1) non-glutinous place (NSOL) on the lead of line can be caused by supplying too low power and scouring amplitude, and
(2) supply too high-tensile strength and scouring amplitude can cause short-tail (SHTL).
D. free air ball (FAB)：
FAB is assessed by performing conventional electric flame off (EFO) igniting with following 2 kinds of different modes：(a) standard ignition-mono-
Individual step, and-two steps of (b) advanced igniting, referring to following table：
The table is according to free air ball KNS techniques users' guidebook (Kulicke ＆Soffa Industry Co., Ltd, Washington fort, the U.S.
Pennsylvania, on May 31st, 2002,2009) described in program and draw.Existed with μm scale using light microscope
200X to 500X magnifying powers get off to measure FAB diameters.FAB form is observed using SEM (SEM).Assess
The shape and symmetry of the wire material molten melt drop hung on before stitch bond at line end.
Assessment to the performance of FAB configurations：
+, the solidification of line molten melt drop, but ball size is less than specification and/or is pointed
++, line molten melt drop is solidified with spheroid form, but ball size does not meet specification and/or is inclined
+++, line molten melt drop solidifies with spheroid form and in specification, but is slightly slanted
++++, line molten melt drop is solidified with spheroid and axial symmetry spherical shape
E. be averaged engaged ball circularity and concentricity：
Quantify engaged ball (the first engagement) form by measuring average roundness and concentricity.Use standard ignition mode
Or advanced ignition mode and line is engaged.The exposed copper cash with copper and nickel alloy of 4N is using standard ignition mode
Engagement, and with the copper cash of silver-nickel alloy engaged using advanced ignition mode.
Engaged ball is observed with 500X magnifying powers in high magnification Nikon microscope MM40.The e- interconnected with microscope
Max software versions 5.3 are justified for 16 measured marginal points by least squares method come prediction theory.Obtain each edge and reason
By the deviation of radius of circle.Difference between maximum deflection difference value and minimum deviation value is defined as DevE, i.e., the average roundness of engaged ball.
The good ball of circularity shows 0.001 μm of average roundness and poor ball demonstrates 0.003 μm of average roundness.
In the situation of averagely engaged ball concentricity, along outer 12 edges of circle mark.E-max softwares are flat by minimum
Method carrys out prediction theory circle and obtains cylindrical center.Similarly, it predicts inner circle and its center.Calculate it is cylindrical between inner circle
The equation of the ecentre in both X-direction and Y-direction, according to this equation of the ecentre according toTo calculate concentricity.With one heart
The good engaged ball of degree shows 0.0001 μm, and worst ball demonstrates out 0.0009 μm.
F. to the salting liquid Soak Test of continuously casting bar：
Length is separated for 10mm continuously casting 8mm bars and is soaked at 85 DEG C in salting liquid up to 4 days, DI is used
Water rinses and uses acetone rinsing later.The salting liquid contains the 20wt.-%NaCl being dissolved in deionization (DI) water.Relatively low
With the surface discolouration of bar described in 10X to 100X power views under multiplying power mirror (stereoscope-SZX16).Converted from original copper red
Show some place's crevice corrosions to the bar surface of furvous.SEM-EDX demonstration chlorine peak, oxygen peak and the copper carried out to furvous surface
Peak.
Assess：
+, 100% casting bar surface transforms to furvous from original copper red, shows some place's crevice corrosions
++,<70% casting bar surface transforms to black from original copper red, shows crevice corrosion
+++,<40% casting bar surface transforms to black from original copper red, shows slight crevice corrosion
++++,<10% casting bar surface transforms to furvous from original copper red, shows that crevice corrosion is less significant or not
In the presence of
G. to the salting liquid Soak Test of engaged ball：
Al-0.5wt.-%Cu joint sheets are arrived into thread ball engagement.By the test device with the line so engaged at 25 DEG C
Be soaked in salting liquid up to 2,4,6,8 and 10 minutes, rinsed with DI water and use acetone rinsing later.The salting liquid contain from
30wt.-ppm NaCl in sub (DI) water.Checked under compared with low range mirror (stereoscope-SZX16) with 10X to 100X magnifying powers
The number of stripped ball.It was observed that the stripped ball of higher number shows the couple corrosion of some place interfaces.
H. the moisture-proof to continuously casting bar is tested：
Length is separated for 10mm continuously casting 8mm bars and stores it under 130 DEG C of temperature, 85% relative humidity (RH)
Up to 4 days in stress test (HAST) room that height accelerates.Amplified under low range mirror (stereoscope-SZX16) with 10X to 100X
Rate inspection is through HAST test samples to check surface discolouration.Similar to salting liquid Soak Test, transformed to secretly from original copper red
The bar surface of black shows some place's crevice corrosions.The SEM-EDX demonstration oxygen peaks and Tong Feng carried out to furvous surface.
Assess：
+, 100% casting bar surface transforms to furvous from original copper red, shows some place's crevice corrosions
++,<70% casting bar surface transforms to black from original copper red, shows crevice corrosion
+++,<40% casting bar surface transforms to black from original copper red, shows slight crevice corrosion
++++,<10% casting bar surface transforms to furvous from original copper red, shows that crevice corrosion is less significant or not
In the presence of
I. the moisture-proof to engaged ball is tested：
Al-0.5wt.-%Cu joint sheets are arrived into thread ball engagement.By the test device with the line so engaged at 130 DEG C
Be stored under temperature, 85% relative humidity (RH) height accelerate stress test (HAST) room in up to 20 hours, and later compared with
The number of stripped ball is checked under low mirror (stereoscope-SZX16) with 10X to 100X magnifying powers.It was observed that higher number is through stripping
Show the couple corrosion of some place interfaces from ball.
J. Vickers hardness：
Surveyed using Fei Shi (Fischer) the mirror H110C test equipments with Vickers indenter (Vickers indenter)
Measure hardness.The power for applying 10mN to p-wire sample reaches 5s residence time.The test is that the center of annealed core is held
OK.
Example 1-10
The copper product (" 4N copper ") of a certain amount of at least 99.99% purity is melted in crucible.A small amount of foundry alloy is added
It is added to copper melts and by stirring being uniformly distributed for determine addO-on therapy.Use following foundry alloy.
For table 1 and the alloy of table 2, addition foundry alloy Cu-5wt.-%Ni, Cu-15wt.-%Ag and Cu-0.5wt.-%
P correspondence combination.Then, it is in the line predecessor of 8mm rod types from melt continuously casting.
The 8mm bars are drawn with 6 main drawing stages (there are 22 processing steps in each stage), to form circle
Shape and average diameter are 18 μm of line, are stretched wherein being performed in each processing step to predecessor from 6% to 18% length
It is long.In the example presented herein, 17% elongation is put into practice for the stage 1,11% elongation is put into practice for stage 2 to the stage 5,
And put into practice 8% elongation for the stage 6.Slip agent is used during drawing.
By means of such a program, manufacture copper-nickel and copper-nickel-silver alloy line and the sample of a comparative line (Ref).
Pass through ICP (inductively coupled plasmas using Pa Jinaiermo (Perkin Elmer) ICP-OES 7100DV models
Body) analyze to control the chemical composition of copper, copper-nickel and copper-nickel-silver alloy line.Line is dissolved in concentrated nitric acid and is used for solution
Icp analysis.
The displaying average diameter of table 1 is the composition of the sample 1 to 6 of 18 μm of invention copper-nickel alloy line.The nickel content of line is such as
Change as indicated, the amount of phosphorus also changes as indicated.Comparative line (Ref) is made up of 4N copper.
Table 1：Average diameter is 18 μm of copper cash and the chemical composition of copper-nickel alloy line, and value is in terms of wt.-ppm
| Sample | Ni | Ag | P | Pd | S | Fe | Mn |
| 4N Cu(Ref) | 5 | 12 | 1.1 | 1.2 | 1.8 | 1.9 | 0.2 |
| 1 | 50 | 12 | 1.1 | 1.2 | 1.8 | 1.9 | 0.2 |
| 2 | 500 | 12 | 1.1 | 1.2 | 1.8 | 1.9 | 0.2 |
| 3 | 5000 | 12 | 1.1 | 1.2 | 1.8 | 1.9 | 0.2 |
| 4 | 10000 | 12 | 1.1 | 1.2 | 1.8 | 1.9 | 0.2 |
| 5 | 50000 | 12 | 1.1 | 1.2 | 1.8 | 1.9 | 0.2 |
| 6 | 5000 | 12 | 50 | 1.2 | 1.8 | 1.9 | 0.2 |
Table 2 shows the composition of the sample wire 7 to 10 each with 18 μm of average diameters.Silver, nickel and the phosphorus content of the line
Change as indicated.Comparative line (Ref) is made up of 4N copper.
Table 2：Average diameter is 18 μm of copper cash and the chemical composition of copper-nickel-silver alloy line, and value is in terms of wt.-ppm
| Sample | Ni | Ag | P | Pd | S | Fe | Mn |
| 4N Cu(Ref) | 5 | 12 | 1.1 | 1.2 | 1.8 | 1.9 | 0.2 |
| 7 | 1000 | 1000 | 1.1 | 1.2 | 1.8 | 1.9 | 0.2 |
| 8 | 1000 | 5000 | 1.1 | 1.2 | 1.8 | 1.9 | 0.2 |
| 9 | 5000 | 1000 | 1.1 | 1.2 | 1.8 | 1.9 | 0.2 |
| 10 | 2500 | 2500 | 50 | 1.2 | 1.8 | 1.9 | 0.2 |
The line is annealed in final annealing processing step.The annealing is by making the line with 1m/s speed
By length be 30cm and annealing temperature is the tubular annealing stove of 560 DEG C (line 1-6) or 650 DEG C (line 7-10) and is moved back as strand
Fire is performed dynamically.After the stove is left, the line is wound on spool for encapsulation.
In present example, annealing time is open-assembly time of one section of given portable cord in heated stove, and it is
0.3s.In stove area, steady temperature is adjusted.
Measure the average crystal grain size of line sample 1 to 10.For sample 1 to 6, as a result in 3 μm to 6 μm of scope,
And for sample 7 to 10, as a result in 1.5 μm to 6 μm of scope.
Table 3 below shows the test result obtained with the engaged line of 8mm bars and sample 1 to 6.
Table 3
Table 4 below shows the test result obtained with the engaged line of 8mm bars and sample 7 to 10.
Table 4
Line 1-6 and 7-10 produce the process window for being very suitable for commercial Application.Arrived at least in 0.5wt.-%
Nickel content in 5wt.-% scope or for the silver in the scope in 0.1wt.-% to 0.5wt.-% with being in
The combination of nickel in 0.1wt.-% to 0.5wt.-% scope, can observe institute's casting bar and engaged ball corrosion resistance and
Moisture-proof is significantly improved.
Claims (15)
1. a kind of line including core, the core includes the following or is made up of the following
(a) nickel, its amount is in the scope from 0.005wt.-% to 5wt.-%,
(b) optionally, silver-colored, its amount is in the scope from 0.005wt.-% to 1wt.-%,
(c) copper, its amount is in the scope from 94wt.-% to 99.98wt.-%, and
(d) 0wt.-ppm to 100wt.-ppm other components,
All amounts wherein in terms of wt.-% and wt.-ppm are based on the gross weight of the core,
Wherein described core has the average crystal grain size in the scope from 1.5 μm to 30 μm, and the mean size is basis
Line intercept method and determine,
Wherein described line has the average diameter in the scope from 8 μm to 80 μm.
2. line according to claim 1,
Wherein
The average diameter is in the scope from 12 μm to 55 μm.
3. line according to claim 1 or 2,
Wherein
The core is stacked and placed on the surface of the core with the surface for being outer surface, or its floating coat.
4. line according to claim 3,
Wherein
Relative to the gross mass of the core, the quality of the coating is not more than 2.5wt.-%.
5. the line according to claim 3 or 4,
Wherein
The coating is palladium, the individual layer of platinum or silver or several multilayers through stacked adjacent layer, each layer be by selected from by
A kind of element of the group of palladium, platinum and silver composition is made.
6. the line according to claim 3,4 or 5,
Wherein
Another coating is stacked and placed on the coating.
7. line according to claim 6,
Wherein
Another coating is layer gold.
8. line according to any one of the preceding claims,
Wherein
The core includes element phosphor as dopant, the gross weight based on the core, the amount of the element phosphor be in from
In 40wt.-ppm to 80wt.-ppm scope.
9. line according to any one of the preceding claims,
Wherein
The ratio between the average crystal grain size in the diameter of the core and the core is in from 2 to 14 scope.
10. line according to any one of the preceding claims,
Its feature is at least that one of following characteristics：
α) corrosion resistance has the value that at most 0% engaged ball is peeled off；
β) moisture-proof has the value that at most 0% engaged ball is peeled off；
γ) hardness of the core is not more than 120HV；
On the premise of average diameter δ) in the line with 18 μm, the technique window ara of stitch bond has at least 40 μm
G value；
ε) resistivity of the line is not more than 1.80 μ Ω cm；
On the premise of average diameter ζ) in the line with 18 μm, average engaged ball circularity has at most 0.0025 μm
Value；
On the premise of average diameter η) in the line with 18 μm, average engaged ball concentricity has at most 0.00056 μm
Value.
11. a kind of method for manufacturing line according to any one of the preceding claims, methods described includes
At least following processing step
(1) forerunner's items are provided, forerunner's items include the following or are made up of the following：
(a) nickel, its amount is in the scope from 0.005wt.-% to 5wt.-%,
(b) optionally, silver-colored, its amount is in the scope from 0.005wt.-% to 1wt.-%,
(c) copper, its amount is in the scope from 94wt.-% to 99.98wt.-%, and
(d) 0wt.-ppm to 100wt.-ppm other components,
All amounts wherein in terms of wt.-% and wt.-ppm are based on the gross weight of forerunner's items,
(2) make forerunner's items elongation to form line predecessor, until obtain the core want diameter untill；And
(3) to being annealed in the described of completion processing step (2) acquisition afterwards through extending line predecessor.
12. method according to claim 11,
Wherein
The annealing is strand annealing.
13. the method according to claim 11 or 12,
Wherein
The annealing is performed up to 0.1 second to 0.4 second under target temperature in 440 DEG C to 700 DEG C of scope.
14. the method according to claim 11,12 or 13,
Wherein
The annealing is performed at a temperature of higher than maximum elongation rate temperature, wherein the elongation values of the line after anneal
No more than the 98% of maximum elongation rate value.
15. the method according to any claim in claim 11 to 14,
Wherein
The annealing is performed in inert atmosphere or reducing atmosphere.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SG10201408586XA SG10201408586XA (en) | 2014-12-22 | 2014-12-22 | Corrosion and moisture resistant bonding wire |
| SG10201408586X | 2014-12-22 | ||
| PCT/SG2015/000142 WO2016105276A1 (en) | 2014-12-22 | 2015-11-26 | Corrosion and moisture resistant copper based bonding wire comprising nickel |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107109532A true CN107109532A (en) | 2017-08-29 |
Family
ID=55066730
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201580062949.7A Pending CN107109532A (en) | 2014-12-22 | 2015-11-26 | Corrosion-resistant and moisture-proof the nickeliferous closing line based on copper |
Country Status (6)
| Country | Link |
|---|---|
| EP (1) | EP3237645A1 (en) |
| JP (1) | JP2018503743A (en) |
| CN (1) | CN107109532A (en) |
| SG (1) | SG10201408586XA (en) |
| TW (1) | TWI587317B (en) |
| WO (1) | WO2016105276A1 (en) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SG10201509913XA (en) * | 2015-12-02 | 2017-07-28 | Heraeus Materials Singapore Pte Ltd | Silver alloyed copper wire |
| CN114761591B (en) | 2019-12-02 | 2024-01-05 | 日铁新材料股份有限公司 | Copper bonding wire for semiconductor device and semiconductor device |
| WO2021167083A1 (en) | 2020-02-21 | 2021-08-26 | 日鉄マイクロメタル株式会社 | Copper bonding wire |
| KR20240026927A (en) | 2021-06-25 | 2024-02-29 | 닛데쓰마이크로메탈가부시키가이샤 | Bonding wire for semiconductor devices |
| KR20240026929A (en) | 2021-06-25 | 2024-02-29 | 닛데쓰마이크로메탈가부시키가이샤 | Bonding wire for semiconductor devices |
| KR102497489B1 (en) | 2021-06-25 | 2023-02-08 | 닛데쓰마이크로메탈가부시키가이샤 | Bonding wire for semiconductor devices |
| JPWO2022270077A1 (en) | 2021-06-25 | 2022-12-29 | ||
| EP4174202A4 (en) | 2021-06-25 | 2024-05-29 | Nippon Micrometal Corporation | Bonding wire for semiconductor devices |
| WO2022270050A1 (en) | 2021-06-25 | 2022-12-29 | 日鉄マイクロメタル株式会社 | Bonding wire for semiconductor devices |
| WO2023248491A1 (en) | 2022-06-24 | 2023-12-28 | 日鉄ケミカル＆マテリアル株式会社 | Bonding wire for semiconductor device |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5106701A (en) * | 1990-02-01 | 1992-04-21 | Fujikura Ltd. | Copper alloy wire, and insulated electric wires and multiple core parallel bonded wires made of the same |
| JP2006307277A (en) * | 2005-04-27 | 2006-11-09 | Fujikura Ltd | Method for manufacturing plated extra-fine wire |
| CN101326593A (en) * | 2005-12-07 | 2008-12-17 | 古河电气工业株式会社 | Conductor of electric cable for wiring, electric cable for wiring, and methods of producing them |
| JP2010177056A (en) * | 2009-01-29 | 2010-08-12 | Sumitomo Electric Ind Ltd | Method for manufacturing cu-ag alloy wire, and cu-ag alloy wire |
| CN102130067A (en) * | 2010-12-31 | 2011-07-20 | 四川威纳尔特种电子材料有限公司 | Surface palladium-plated bonding brass wire |
| CN102422404A (en) * | 2009-07-30 | 2012-04-18 | 新日铁高新材料株式会社 | Bonding wire for semiconductor |
| CN103137236A (en) * | 2011-12-01 | 2013-06-05 | 贺利氏材料科技公司 | Alloyed 2N copper wires for bonding in microelectronics devices |
| US20140209215A1 (en) * | 2013-01-29 | 2014-07-31 | Tung-Han Chuang | Copper-based alloy wire and methods for manufaturing the same |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6199645A (en) * | 1984-10-20 | 1986-05-17 | Tanaka Denshi Kogyo Kk | Copper alloy for bonding of semiconductor device |
| JP2004193552A (en) * | 2002-10-17 | 2004-07-08 | Mitsubishi Materials Corp | Copper alloy sputtering target for forming semiconductor device interconnect line seed layer |
| JP4554724B2 (en) | 2008-01-25 | 2010-09-29 | 新日鉄マテリアルズ株式会社 | Bonding wires for semiconductor devices |
| JP4919364B2 (en) * | 2010-08-11 | 2012-04-18 | 田中電子工業株式会社 | Gold-coated copper wire for ball bonding |
| US20130042949A1 (en) * | 2011-08-17 | 2013-02-21 | Hitachi Cable, Ltd. | Method of manufacturing soft-dilute-copper-alloy-material |
| CN102433462A (en) * | 2011-12-02 | 2012-05-02 | 天津市信九电子有限公司 | Compensation conducting wire alloy for D type thermoelectric couple |
| TW201614748A (en) * | 2013-01-23 | 2016-04-16 | Heraeus Materials Tech Gmbh | Coated wire for bonding applications, method for manufacturing the same, and application thereof in an electronic device |
| JP5668087B2 (en) * | 2013-02-22 | 2015-02-12 | 田中電子工業株式会社 | Structure of copper dilute nickel alloy wire for semiconductor device bonding |
| WO2014178792A1 (en) * | 2013-05-03 | 2014-11-06 | Heraeus Materials Singapore Pte., Ltd. | Copper bond wire and method of making the same |
| CN103325435B (en) * | 2013-05-31 | 2016-05-04 | 重庆材料研究院有限公司 | For alloy material and the preparation method of compensation lead of thermocouple |
-
2014
- 2014-12-22 SG SG10201408586XA patent/SG10201408586XA/en unknown
-
2015
- 2015-11-26 JP JP2017532118A patent/JP2018503743A/en active Pending
- 2015-11-26 CN CN201580062949.7A patent/CN107109532A/en active Pending
- 2015-11-26 WO PCT/SG2015/000142 patent/WO2016105276A1/en active Application Filing
- 2015-11-26 EP EP15818103.2A patent/EP3237645A1/en not_active Withdrawn
- 2015-12-17 TW TW104142565A patent/TWI587317B/en not_active IP Right Cessation
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5106701A (en) * | 1990-02-01 | 1992-04-21 | Fujikura Ltd. | Copper alloy wire, and insulated electric wires and multiple core parallel bonded wires made of the same |
| JP2006307277A (en) * | 2005-04-27 | 2006-11-09 | Fujikura Ltd | Method for manufacturing plated extra-fine wire |
| CN101326593A (en) * | 2005-12-07 | 2008-12-17 | 古河电气工业株式会社 | Conductor of electric cable for wiring, electric cable for wiring, and methods of producing them |
| JP2010177056A (en) * | 2009-01-29 | 2010-08-12 | Sumitomo Electric Ind Ltd | Method for manufacturing cu-ag alloy wire, and cu-ag alloy wire |
| CN102422404A (en) * | 2009-07-30 | 2012-04-18 | 新日铁高新材料株式会社 | Bonding wire for semiconductor |
| CN102130067A (en) * | 2010-12-31 | 2011-07-20 | 四川威纳尔特种电子材料有限公司 | Surface palladium-plated bonding brass wire |
| CN103137236A (en) * | 2011-12-01 | 2013-06-05 | 贺利氏材料科技公司 | Alloyed 2N copper wires for bonding in microelectronics devices |
| US20140209215A1 (en) * | 2013-01-29 | 2014-07-31 | Tung-Han Chuang | Copper-based alloy wire and methods for manufaturing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201631602A (en) | 2016-09-01 |
| EP3237645A1 (en) | 2017-11-01 |
| WO2016105276A1 (en) | 2016-06-30 |
| TWI587317B (en) | 2017-06-11 |
| WO2016105276A8 (en) | 2017-06-29 |
| JP2018503743A (en) | 2018-02-08 |
| SG10201408586XA (en) | 2016-07-28 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN107109532A (en) | Corrosion-resistant and moisture-proof the nickeliferous closing line based on copper | |
| EP3282473B1 (en) | Bonding wire for semiconductor device | |
| CN108290254B (en) | Coated wire | |
| EP3121841B1 (en) | Bonding wire for semiconductor device | |
| JP6499159B2 (en) | Copper alloy wire and method for producing the same | |
| JP6639908B2 (en) | Copper alloy wire and method of manufacturing the same | |
| US20180122765A1 (en) | Bonding wire for semiconductor device | |
| CN108291276B (en) | Silver alloy copper wire | |
| TWI649433B (en) | Alloyed silver wire | |
| WO2018048344A1 (en) | Coated wire | |
| JP2014070277A (en) | Wire for etching cut, and cutting method of inorganic brittle material using the same | |
| TWI649434B (en) | Alloyed silver wire | |
| JP5577272B2 (en) | Hot-dip galvanized steel pipe |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20170829 |
|
| WD01 | Invention patent application deemed withdrawn after publication |