CN107104154A - Schottky diode and preparation method thereof - Google Patents
Schottky diode and preparation method thereof Download PDFInfo
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- CN107104154A CN107104154A CN201610100214.5A CN201610100214A CN107104154A CN 107104154 A CN107104154 A CN 107104154A CN 201610100214 A CN201610100214 A CN 201610100214A CN 107104154 A CN107104154 A CN 107104154A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 14
- 239000004065 semiconductor Substances 0.000 claims abstract description 82
- 239000000463 material Substances 0.000 claims abstract description 14
- 229910052751 metal Inorganic materials 0.000 claims description 17
- 239000002184 metal Substances 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 17
- 230000015572 biosynthetic process Effects 0.000 claims description 14
- 238000005530 etching Methods 0.000 claims description 11
- 238000001259 photo etching Methods 0.000 claims description 11
- 238000003780 insertion Methods 0.000 claims description 5
- 230000037431 insertion Effects 0.000 claims description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- 239000004020 conductor Substances 0.000 claims 2
- 229910002704 AlGaN Inorganic materials 0.000 abstract description 12
- 229910002601 GaN Inorganic materials 0.000 description 16
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 15
- 238000005036 potential barrier Methods 0.000 description 11
- 230000005533 two-dimensional electron gas Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- 238000005566 electron beam evaporation Methods 0.000 description 3
- 238000001755 magnetron sputter deposition Methods 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000001335 aliphatic alkanes Chemical group 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000002510 pyrogen Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
- H01L29/66143—Schottky diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/66196—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices with an active layer made of a group 13/15 material
- H01L29/66204—Diodes
- H01L29/66212—Schottky diodes
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
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- Ceramic Engineering (AREA)
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Abstract
The present invention provides a kind of Schottky diode and preparation method thereof, is related to semiconductor components and devices technical field.The Schottky diode includes semiconductor active layer, the dielectric layer being covered on semiconductor active layer；Through dielectric layer, and the negative electrode and anode contacted with semiconductor active layer, anode includes the first conductive part and the second conductive part, and the second conductive part covers the side wall and top surface of the first conductive part, and the work function of the second conductive part is more than the work function of first conductive part.Solve existing GaN base AlGaN/GaN materials Schottky diode exist voltage endurance capability it is poor, loss it is big the problem of.
Description
Technical field
The present invention relates to semiconductor components and devices technology, more particularly to a kind of Schottky diode and its making side
Method.
Background technology
With the increasingly increase of efficiently complete circuit for power conversion and system requirements, with low-power consumption and height
The power device of fast characteristic is increasingly paid close attention to by industry.
GaN (gallium nitride) is third generation semiconductor material with wide forbidden band, because it has big energy gap, height
Electron saturation velocities, high breakdown electric field, higher heat-conductivity, corrosion-resistant and radiation resistance, high pressure,
There is stronger advantage, it is considered to be research is short under high frequency, high temperature, high-power and Flouride-resistani acid phesphatase environmental condition
The optimal material of wavelength optoelectronic and high voltagehigh frequency rate high power device.
The Schottky diode of GaN base AlGaN/GaN (AlGaN is aluminum gallium nitride) material is high-power device
Study hotspot in part, because high concentration, high mobility can be formed at AlGaN/GaN hetero-junctions
2DEG (Two-dimensional electron gas, two-dimensional electron gas), while hetero-junctions is to 2DEG
With good adjustment effect.
Research finds that the Schottky diode of existing GaN base AlGaN/GaN materials is in high electric field end
Pyrogenicity electron emission or electronics tunneling effect can cause reverse leakage to increase, and cause diode voltage endurance capability poor,
And the problem of being lost big.
The content of the invention
The present invention provides a kind of Schottky diode and preparation method thereof, to solve existing GaN base
The problem of voltage endurance capability that the Schottky diodes of AlGaN/GaN materials is present is poor, loss is big.
On the one hand the embodiment of the present invention provides a kind of Schottky diode, including：
Semiconductor active layer, the dielectric layer being covered on the semiconductor active layer；
Through the dielectric layer, and the negative electrode and anode contacted with the semiconductor active layer, the anode
Including the first conductive part and the second conductive part, second conductive part covers the side wall of first conductive part
And top surface, and work function of the work function more than first conductive part of second conductive part.
On the other hand the embodiment of the present invention provides a kind of preparation method of Schottky diode, including：
Form semiconductor active layer；
Dielectric layer is formed on the semiconductor active layer；
Formed through the dielectric layer, and the negative electrode contacted with the semiconductor active layer；
Formed through the dielectric layer, and the anode contacted with the semiconductor active layer；The anode bag
Include the first conductive part and the second conductive part, second conductive part cover first conductive part side wall and
Top surface, and the work function of second conductive part is more than first conductive part.
In Schottky diode that the present invention is provided and preparation method thereof, form comprising the first conductive part and
The anode of second conductive part, second conductive part covers the side wall and top surface of the first conductive part, and second leads
The work function in electric portion is more than the first conductive part, shape due to less first conductive part of work function operationally
Into potential barrier it is relatively low, the forward conduction voltage drop of diode can be reduced so that the power attenuation of diode subtracts
It is small, and the second larger conductive part of work function is operationally, the potential barrier of formation is higher, can improve two poles
Pipe it is pressure-resistant so that Schottky diode have more high withstand voltage and lower power attenuation.
Brief description of the drawings
In order to illustrate more clearly about the embodiment of the present invention or technical scheme of the prior art, below will be to reality
The accompanying drawing used required for applying in example or description of the prior art is briefly described, it should be apparent that, under
Accompanying drawing in the description of face is some embodiments of the present invention, for those of ordinary skill in the art,
On the premise of not paying creative labor, other accompanying drawings can also be obtained according to these accompanying drawings.
Fig. 1 is a kind of diagrammatic cross-section for Schottky diode that embodiment one is provided；
Fig. 2 a~Fig. 2 c are the Schottky diode Anodic shown in Fig. 1 three kinds in semiconductor active layer
The schematic diagram of setting form；
Fig. 3 is a kind of flow chart of the preparation method for Schottky diode that embodiment two is provided；
Fig. 4 a~Fig. 4 k are each step formation of preparation method for the Schottky diode that embodiment three is provided
Structural representation.
Embodiment
To make the purpose, technical scheme and advantage of the embodiment of the present invention clearer, below in conjunction with this hair
Accompanying drawing in bright embodiment, the technical scheme in the embodiment of the present invention is clearly and completely described,
Obviously, described embodiment is a part of embodiment of the invention, rather than whole embodiments.It is based on
Embodiment in the present invention, those of ordinary skill in the art are obtained under the premise of creative work is not made
The every other embodiment obtained, belongs to the scope of protection of the invention.
Embodiment one
Fig. 1 is a kind of diagrammatic cross-section for Schottky diode that embodiment one is provided.Fig. 2 a~Fig. 2 c
For the signal of the three kinds of setting forms in semiconductor active layer of the Schottky diode Anodic shown in Fig. 1
Figure.
As shown in figure 1, the Schottky diode includes semiconductor active layer 11, is covered in the semiconductor and has
Dielectric layer 12 in active layer 11, in addition to connect through the dielectric layer 12, and with the semiconductor active layer 11
Tactile negative electrode 13 and anode 14.Wherein, anode 14 includes the first conductive part 141 and the second conductive part 142.
Second conductive part 142 covers the side wall and top surface of the first conductive part 141, and the work(of the second conductive part 142
Function is more than the work function of the first conductive part 141.
Work function (work function) is also known as work content, work function, is defined as in solid-state physics：
The minimum energy that one electronics has just been moved on to from interior of articles needed for this body surface, can simply be managed
Solve the ability for possessing or arresting electronics for object.
Schottky diode is made using metal and the metal-semiconductor junction principle of semiconductor contact formation
.Therefore, Schottky diode is also referred to as metal-semiconductor (contact) diode or surface potential
Diode is built, it is a kind of hot carrier diode.In the present embodiment, anode 14 and semiconductor active layer
11 contact is Schottky contacts, forms metal-semiconductor junction, negative electrode 13 and semiconductor between them
The contact of active layer 11 is Ohmic contact, will not form metal-semiconductor junction between them.
In anode 14, there is relatively low work function as the first conductive layer 141 of internal layer, therefore it is grabbed
The ability for obtaining electronics is relatively low, and the potential barrier formed in the semiconductor active layer around it is relatively low, in diode
During forward conduction, electronics is easier through potential barrier, therefore the forward conduction voltage drop produced is small；And conduct
Second conductive layer 142 of outer layer have higher work function, therefore it arrest electronics ability it is higher, its
Around semiconductor active layer in the potential barrier that is formed it is also higher, hence in so that diode have it is higher pressure-resistant
Ability.
In above-described embodiment, semiconductor active layer 11 can include sequentially form from bottom to top substrate 111,
GaN layer 112 and AlGaN layer 113.Substrate can include but is not limited to SiC, Si or sapphire.Make
For the semiconductor active layer 11 of Schottky diode, GaN layer 112 therein is commonly known as cushion,
This layer can also be AlGaN and GaN composite bed, and AlGaN layer 113 is commonly known as barrier layer, should
Layer, which can also be, includes the AlGaN layer of AlN insert layers, can also include GaN cap.In GaN layer
The thin electronic shell that interface between 112 and AlGaN layer 113 has a Two-dimensional morphology is referred to as two dimension
Electron gas (2DEG), the two-dimensional electron gas shows higher electron mobility characteristics, so as to provide non-
Often small conducting resistance, therefore be widely used in the making of diode.
In above-described embodiment, the bottom of anode 14 can be embedded in semiconductor active layer 11, so that positive
Contact area between pole 14 and semiconductor active layer 11 is bigger, and then increases the face of electronics circulation passage
Product so that the forward conduction threshold voltage and forward voltage drop of anode 14 are further significantly reduced.
In addition, in the bottom insertion semiconductor active layer 11 of anode 14, the bottom of anode 14 can be made more to connect
Nearly two-dimensional electron gas, so that the schottky junction formed between anode 14 and semiconductor active layer 11 more connects
Nearly two-dimensional electron gas, and then the barrier height and barrier width of schottky junction is all reduced, so, Xiao Te
The reversed bias voltage born in base junction is greatly reduced, so reduce schottky junction it is reverse-biased under electric leakage, carry
High withstand voltage characteristic.
Specifically, as shown in Fig. 2 a~Fig. 2 c, in the bottom insertion semiconductor active layer 11 of anode 14
When, can be the first conductive part 141 shown in Fig. 2 a bottom insertion semiconductor active layer 11 in, and
Second conductive part 142 is contacted with the surface of semiconductor active layer 11, is not extend to semiconductor active layer 11
In；Can also be the second conductive part 142 shown in Fig. 2 b bottom insertion semiconductor active layer 11 in,
And the first conductive part 141 is contacted with the surface of semiconductor active layer 11, semiconductor active layer is not extend to
In 11；It can also be that the bottom of the first conductive part 141 shown in Fig. 2 c and the second conductive part 142 is embedding
Enter in semiconductor active layer 11.Specific set location can be selected according to actual needs.
In above-described embodiment, the material of the first conductive part 141 is the less material of work function, is generally selected
TiN, and the material of the second conductive part 142 is the larger material of work function, the material of selection is generally included certainly
It is lower and on the Ni layers that sequentially form with Au layers.
In above-described embodiment, the width d1 of the first conductive part 141 can be 100 nanometers, the second conductive part
142 thickness d 2 can be 200 nanometers, and the distance between negative electrode 13 and anode 14 d3 can be 13
Micron.Experiment shows, in this way, the pressure-resistant and drain performance of diode can be made more excellent.Need
Bright is：The distance between negative electrode 13 and anode 14 d3 represent the outer surface of negative electrode 13 and the outer layer of anode 14
The distance between the outer surface of the second conductive part 142, as shown in Figure 1.
In addition, in above-described embodiment, dielectric layer 12 can include the Si sequentially formed from bottom to top3N4Layer
121 and PETEOS (plasma-enhanced tetraethy-lortho-silicate, tetraethoxy-silicane
The plasma-enhanced deposition of alkane) layer 122, to ensure reliably to be electrically insulated between anode 14 and negative electrode 13.
In the Schottky diode that the present embodiment is provided, form comprising the first conductive part and the second conductive part
Anode, second conductive part covers the side wall and top surface of the first conductive part, and the work content of the second conductive part
Number is more than the first conductive part, due to less first conductive part of work function operationally, the potential barrier of formation compared with
It is low, the forward conduction voltage drop of diode can be reduced so that the power attenuation of diode reduces, and work content
Operationally, the potential barrier of formation is higher, can improve the pressure-resistant of diode for the second larger conductive part of number,
So that Schottky diode has more high withstand voltage and lower power attenuation.
Embodiment two
Fig. 3 is a kind of flow chart of the preparation method for Schottky diode that embodiment two is provided.Such as Fig. 3
Shown, this method comprises the following steps.
301st, semiconductor active layer is formed.
302nd, dielectric layer is formed on semiconductor active layer.
303rd, formed through dielectric layer, and the negative electrode contacted with semiconductor active layer.
304th, formed through dielectric layer, and the anode contacted with semiconductor active layer.Anode is led including first
Electric portion and the second conductive part, the second conductive part cover the side wall and top surface of the first conductive part, and the second conduction
The work function in portion is more than the first conductive part.
Wherein, the concrete composition of semiconductor active layer, dielectric layer is as implemented described in one, no longer to go to live in the household of one's in-laws on getting married herein
State.
In the preparation method for the Schottky diode that the present embodiment is provided, form comprising the first conductive part and
The anode of second conductive part, second conductive part covers the side wall and top surface of the first conductive part, and second leads
The work function in electric portion is more than the first conductive part, shape due to less first conductive part of work function operationally
Into potential barrier it is relatively low, the forward conduction voltage drop of diode can be reduced so that the power attenuation of diode subtracts
It is small, and the second larger conductive part of work function is operationally, the potential barrier of formation is higher, can improve two poles
Pipe it is pressure-resistant so that Schottky diode have more high withstand voltage and lower power attenuation.
Embodiment three
Fig. 4 a~Fig. 4 k are each step formation of preparation method for the Schottky diode that embodiment three is provided
Structural representation.As shown in Fig. 4 a~Fig. 4 k, this method comprises the following steps.
Step 401, formation semiconductor active layer 11.
As shown in fig. 4 a, the semiconductor active layer 11 include sequentially form from bottom to top substrate 111,
GaN layer 112 and AlGaN layer 113.
Step 402, the formation dielectric layer 12 on semiconductor active layer 11.
As shown in Figure 4 b, the dielectric layer 12 includes the Si sequentially formed from bottom to top3N4121 and PETEOS of layer
Layer 122.
Step 403, using photoetching process dielectric layer 12 is performed etching, form sudden and violent on dielectric layer 12
Reveal the first contact hole 41 of semiconductor active layer 11.
As illustrated in fig. 4 c, photoetching process therein is prior art to the step, including photoresist is coated, exposure
The steps such as light, development, etching, removing glue, will not be repeated here.
Step 404, the formation the first metal layer 42 on dielectric layer 12.
The step as shown in figure 4d, can use existing electron beam evaporation process or magnetron sputtering plating work
Skill.
Step 405, using photoetching process the first metal layer 42 is performed etching, form negative electrode 13, the moon
Pole 13 is contacted in the first contact hole 41 with semiconductor active layer 11.
As shown in fig 4e, the contact with semiconductor active layer 11 of negative electrode 13 belongs to Ohmic contact to the step,
Negative electrode 13 selects different materials, contact resistance it is of different sizes, so as to be produced to the electric conductivity of negative electrode 13
Raw different influence.
Step 406, using photoetching process dielectric layer 12 is performed etching, form sudden and violent on dielectric layer 12
Reveal the second contact hole 43 of semiconductor active layer 11.
The step is as shown in fig. 4f.The effect of second contact hole 43 is the first conductive part for anode 14
141 pass through, and are contacted with semiconductor active layer 11, because the first conductive part bottom can be embedded in semiconductor
In active layer 11, therefore, the only exposure semiconductor that the second contact hole 43 can be formed as shown in Fig. 4 f has
The surface of active layer 11, can also be formed as eliminating the structure of part semiconductor active layer 11 (in figure not
Show).
Step 407, the formation second metal layer 44 on dielectric layer 12 and negative electrode 13.
The step as shown in figure 4g, can use existing electron beam evaporation process or magnetron sputtering plating work
Skill.The second metal layer 44 can include TiN, the first conductive part for forming anode, with relatively low
Work function.
Step 408, using photoetching process second metal layer 44 is performed etching, forms the first conductive part 141,
First conductive part 141 is contacted in the second contact hole 43 with semiconductor active layer 11.
As shown in figure 4h, the first contact with semiconductor active layer 11 of conductive part 141 belongs to Xiao to the step
Te Ji is contacted, when eliminating part semiconductor active layer 11 in the second contact hole 43, the first conductive part
141 bottom is embedded in semiconductor active layer 11.
Step 409, using photoetching process the first conductive part 141 and dielectric layer 12 are performed etching, are being situated between
Annular the 3rd that the side wall of 11 and first conductive part of exposure semiconductor active layer 141 is formed in matter layer 12 connects
Contact hole 45.
3rd contact hole 45 of annular is the slotted hole for surrounding the side wall of the first conductive part 141, and effect is for sun
Second conductive part 142 of pole 14 is passed through, and with the side of the conductive part 141 of semiconductor active layer 11 and first
Wall is contacted.The step is as shown in figure 4i.Because the bottom of the second conductive part 142 can be embedded in semiconductor active
In layer 11, therefore, the 3rd contact hole 45 can be formed as the only exposure semiconductor active layer shown in Fig. 4 i
11 surface, can also be formed as eliminating the structure (not shown) of part semiconductor active layer 11.
Step 410, the 3rd metal level of formation on dielectric layer 12, the conductive part 141 of negative electrode 13 and first
46, the work function of the 3rd metal level 46 is more than the work function of second metal layer 44.
The step as shown in figure 4j, can use existing electron beam evaporation process or magnetron sputtering plating work
Skill.Wherein, the 3rd metal level 46 can include the Ni layers sequentially formed from bottom to top and Au layers, be used for
The second conductive part 142 of anode is formed, with higher work function.
Step 411, using photoetching process the 3rd metal level 46 is performed etching, forms the second conductive part 142,
Second conductive part 142 in the 3rd contact hole 45 with the conductive part 141 of semiconductor active layer 11 and first
Side wall contact, and the second conductive part 142 covers the top surface of the first conductive part 141.
The step is as shown in fig. 4k.Second contact with semiconductor active layer 11 of conductive part 142 belongs to Xiao
Te Ji is contacted, when eliminating part semiconductor active layer 11 in the 3rd contact hole 45, the second conductive part
142 bottom is embedded in semiconductor active layer 11.
In the preparation method for the Schottky diode that the present embodiment is provided, form comprising the first conductive part and
The anode of second conductive part, second conductive part covers the side wall and top surface of the first conductive part, and second leads
The work function in electric portion is more than the first conductive part, shape due to less first conductive part of work function operationally
Into potential barrier it is relatively low, the forward conduction voltage drop of diode can be reduced so that the power attenuation of diode subtracts
It is small, and the second larger conductive part of work function is operationally, the potential barrier of formation is higher, can improve two poles
Pipe it is pressure-resistant so that Schottky diode have more high withstand voltage and lower power attenuation.
Finally it should be noted that：The above embodiments are merely illustrative of the technical solutions of the present invention, rather than to it
Limitation；Although the present invention is described in detail with reference to the foregoing embodiments, the ordinary skill of this area
Personnel should be understood：It can still modify to the technical scheme described in foregoing embodiments, or
Person carries out equivalent substitution to which part technical characteristic；And these modifications or replacement, do not make corresponding skill
The essence of art scheme departs from the scope of various embodiments of the present invention technical scheme.
Claims (9)
1. a kind of Schottky diode, it is characterised in that including：
Semiconductor active layer, the dielectric layer being covered on the semiconductor active layer；
Through the dielectric layer, and the negative electrode and anode contacted with the semiconductor active layer, the anode
Including the first conductive part and the second conductive part, second conductive part covers the side wall of first conductive part
And top surface, and work function of the work function more than first conductive part of second conductive part.
2. Schottky diode according to claim 1, it is characterised in that the bottom of the anode
In the embedded semiconductor active layer.
3. Schottky diode according to claim 2, it is characterised in that first conductive part
Bottom be embedded in the semiconductor active layer；Or, the bottom insertion described half of second conductive part
In conductor active layer.
4. Schottky diode according to claim 1, it is characterised in that first conductive part
Width be 100 nanometers.
5. Schottky diode according to claim 1, it is characterised in that second conductive part
Thickness be 200 nanometers.
6. Schottky diode according to claim 1, it is characterised in that the negative electrode and anode
The distance between be 13 microns.
7. Schottky diode according to claim 1, it is characterised in that first conductive part
Material be TiN；The material of second conductive part includes the Ni layers and Au sequentially formed from bottom to top
Layer.
8. a kind of preparation method of Schottky diode, it is characterised in that including：
Form semiconductor active layer；
Dielectric layer is formed on the semiconductor active layer；
Formed through the dielectric layer, and the negative electrode contacted with the semiconductor active layer；
Formed through the dielectric layer, and the anode contacted with the semiconductor active layer；The anode bag
Include the first conductive part and the second conductive part, second conductive part cover first conductive part side wall and
Top surface, and the work function of second conductive part is more than first conductive part.
9. preparation method according to claim 8, it is characterised in that the formation anode
Step includes：
The dielectric layer is performed etching using photoetching process, exposure described half is formed in the dielectric layer
First contact hole of conductor active layer；
The first metal layer is formed on the dielectric layer and the negative electrode；
The first metal layer is performed etching using photoetching process, the first conductive part, described first is formed
Conductive part is contacted in first contact hole with the semiconductor active layer；
First conductive part and the dielectric layer are performed etching using photoetching process, in the dielectric layer
Middle annular second contact hole for forming the exposure semiconductor active layer and the first conductive part side wall；
Second metal layer, described are formed on the dielectric layer, the negative electrode and first conductive part
The work function of two metal levels is more than the work function of the first metal layer；
The second metal layer is performed etching using photoetching process, the second conductive part, described second is formed
Side wall of the conductive part with the semiconductor active layer and first conductive part in second contact hole connects
Touch, and second conductive part covers the top surface of first conductive part.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610100214.5A CN107104154A (en) | 2016-02-23 | 2016-02-23 | Schottky diode and preparation method thereof |
Applications Claiming Priority (1)
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| CN110620157A (en) * | 2018-09-26 | 2019-12-27 | 深圳市晶相技术有限公司 | Gallium nitride epitaxial layer, semiconductor device and preparation method thereof |
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| US20120080687A1 (en) * | 2010-09-30 | 2012-04-05 | Kabushiki Kaisha Toshiba | Nitride semiconductor device |
| CN104091835A (en) * | 2014-06-17 | 2014-10-08 | 中国科学院半导体研究所 | Gallium nitride heterojunction schottky barrier diode and manufacturing method thereof |
| CN104882491A (en) * | 2015-02-12 | 2015-09-02 | 苏州捷芯威半导体有限公司 | Schottky diode and manufacturing method thereof |
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| US20120080687A1 (en) * | 2010-09-30 | 2012-04-05 | Kabushiki Kaisha Toshiba | Nitride semiconductor device |
| CN104091835A (en) * | 2014-06-17 | 2014-10-08 | 中国科学院半导体研究所 | Gallium nitride heterojunction schottky barrier diode and manufacturing method thereof |
| CN104882491A (en) * | 2015-02-12 | 2015-09-02 | 苏州捷芯威半导体有限公司 | Schottky diode and manufacturing method thereof |
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| CN110620157A (en) * | 2018-09-26 | 2019-12-27 | 深圳市晶相技术有限公司 | Gallium nitride epitaxial layer, semiconductor device and preparation method thereof |
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