CN107104106B - The production method and TFT substrate of TFT substrate - Google Patents
The production method and TFT substrate of TFT substrate Download PDFInfo
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- CN107104106B CN107104106B CN201710229754.8A CN201710229754A CN107104106B CN 107104106 B CN107104106 B CN 107104106B CN 201710229754 A CN201710229754 A CN 201710229754A CN 107104106 B CN107104106 B CN 107104106B
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- insulating layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
- H01L27/1244—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits for preventing breakage, peeling or short circuiting
Abstract
The present invention provides the production method and TFT substrate of a kind of TFT substrate.The production method of TFT substrate of the invention, successively one first insulating layer of successive sedimentation and an insulation film on bottom conductive layer, then after forming interlayer functional layer on insulation film, second insulating layer is formed on insulation film, the film quality and crystal structure of insulation film are identical as second insulating layer, make to second insulating layer, insulation film and the first insulating layer carry out dry etching and form one through second insulating layer, when the via hole of insulation film and the first insulating layer, the side wall of via hole is not in etching chamfering at the interface between film layer, to which the top layer conductive layer avoided being deposited in via hole is broken, ensure the circuit stability of TFT substrate, improve the reliability of TFT substrate.
Description
Technical field
The present invention relates to field of display technology more particularly to the production methods and TFT substrate of a kind of TFT substrate.
Background technique
Thin film transistor (TFT) (Thin Film Transistor, TFT) is current liquid crystal display device (Liquid Crystal
Display, LCD) and organic electroluminescence display device and method of manufacturing same (Organic Light-Emitting Diode, AMOLED) in master
Driving element is wanted, the developing direction of high performance flat display device is directly related to.Therefore, the whether display panel of LCD, also
It is the display panel of OLED, usually all there is a TFT substrate.By taking the display panel of LCD as an example, mainly by a TFT substrate,
Liquid crystal layer (the Liquid one colored filter (Color Filter, CF) substrate and be configured between TFT substrate and CF substrate
Crystal Layer) it is constituted, its working principle is that controlling liquid by applying driving voltage in TFT substrate and CF substrate
The light refraction of backlight module is come out and generates picture by the rotation of liquid crystal molecule in crystal layer.
It will use transparent insulating layer in LCD and OLED, between metal carbonyl conducting layer or conducting layer electrode to separate, and
In certain positions, upper layer and lower layer metal carbonyl conducting layer or conductive layer need to be connected to, then need to use the insulating layer of these positions
Dry etching carries out aperture, and position of opening is likely to be the superposition of two or more layers insulating layer, and multilayer dielectric layer superposition occurs
Reason, often because will do it other processing procedures between each insulating layer (such as carries out plated film, the exposure of other metal carbonyl conducting layers
And etching), and upper layer metal carbonyl conducting layer has to pass through the two or more layers insulating layer and is connected with underlying metal conductor layer, therefore
It must carry out the aperture of multilayer dielectric layer.It as shown in Figure 1 to Figure 3, is a kind of existing production method of TFT substrate, including such as
Lower step: step S1 ', provide a underlay substrate 1, on the underlay substrate 1 from top to bottom successively make bottom conductive layer 2,
First insulating layer 3 makes interlayer functional layer 4 on the first insulating layer 3, the production covering interlayer functional layer 4 on the first insulating layer 3
Second insulating layer 5；Step S2 ', dry etching is carried out to the first insulating layer 3 and second insulating layer 5, is formed through first absolutely
The via hole 401 of edge layer 3 and second insulating layer 5；Step S3 ', top layer conductive layer 6, the top layer are made in second insulating layer 5
Conductive layer 6 is connected via via hole 401 with bottom conductive layer 2.
When the first insulating layer 3 and the film quality of second insulating layer 5 have differences, such as the film quality of the first insulating layer 3 is compared with second
The having precise film quality of insulating layer 5, as shown in Fig. 2, second insulating layer 5 is easier to be etched when carrying out dry etching, the first insulation
3 etch rate of layer are slower, and 401 inner wall of via hole is caused to etch in second insulating layer 5 and the interface 501 of the first insulating layer 3
Chamfering, as shown in figure 3, the top when continuing deposited top layer conductive layer 6 on the via hole 401 of this form, at corresponding etching chamfering
Layer conductive layer 6 can be broken, and breaking part resistance can increased dramatically, and in the case where fixed voltage, flow through electric current meeting herein
It drastically reduces, seriously affects conductive effect, more seriously 6 complete rupture of top layer conductive layer in entire via hole 401, it will
The circuit of entire TFT substrate is caused to lose due function.
Summary of the invention
The purpose of the present invention is to provide a kind of production methods of TFT substrate, can eliminate the mistake through multilayer dielectric layer
The etching chamfering that hole occurs in film layer interface location avoids being deposited on the top layer conductive layer in via hole and is broken, it is ensured that TFT base
The circuit stability of plate.
The object of the invention is also to provide a kind of TFT substrates, can eliminate the via hole through multilayer dielectric layer in film layer
The etching chamfering that interface location occurs, avoids being deposited on the top layer conductive layer in via hole and is broken, the circuit stability of TFT substrate
Property is good.
To achieve the above object, the present invention provides a kind of production method of TFT substrate, comprising:
One underlay substrate is provided, forms bottom conductive layer on the underlay substrate；
Successively the first insulating layer of successive sedimentation and insulation film on the bottom conductive layer；
Interlayer functional layer is formed on the insulation film；
Second insulating layer is deposited on insulation film and interlayer functional layer；
Dry etching is carried out to the first insulating layer, insulation film and second insulating layer, is formed through the first insulating layer, absolutely
The via hole of edge film and second insulating layer, the via hole expose the part of bottom conductive layer；
Top layer conductive layer is formed over the second dielectric, and the top layer conductive layer is connect by the via hole and bottom conductive layer
Touching；
The film quality and crystal structure of the insulation film are identical as second insulating layer.
The material of the insulation film is identical as second insulating layer.
The material of the bottom conductive layer is metal.
The material of the top layer conductive layer is transparent conductive oxide or metal.
The interlayer functional layer is plain conductor.
Form the detailed process of the via hole through the first insulating layer, insulation film and second insulating layer are as follows: in the second insulation
It is coated with photoresist on layer, photoresist is patterned to form photoresist pattern, is shielding layer to the using the photoresist pattern
One insulating layer, insulation film, second insulating layer carry out dry etching, are formed through the first insulating layer, insulation film, the second insulation
The via hole of layer finally removes photoresist pattern.
Thickness of the thickness of the insulation film less than the first insulating layer and the thickness less than second insulating layer.
The present invention also provides a kind of TFT substrates, comprising: underlay substrate, the bottom conductive layer on the underlay substrate,
The first insulating layer on bottom conductive layer, the insulation film on the first insulating layer, the interlayer on insulation film
Functional layer on insulation film and covers the second insulating layer of interlayer functional layer, through the second insulating layer, insulation film
And first insulating layer via hole and the top layer conductive that is connected in second insulating layer and via via hole with bottom conductive layer
Layer；
The film quality and crystal structure of the insulation film are identical as second insulating layer；
Institute the first insulating layer and insulation film successively successive sedimentation on underlay substrate.
The material of the insulation film is identical as second insulating layer；
The material of the bottom conductive layer is metal；
The material of the top layer conductive layer is transparent conductive oxide or metal；
The interlayer functional layer is plain conductor；
Thickness of the thickness of the insulation film less than the first insulating layer and the thickness less than second insulating layer.
Beneficial effects of the present invention: the production method of TFT substrate of the invention, the successively successive sedimentation on bottom conductive layer
One first insulating layer and an insulation film after then forming interlayer functional layer on insulation film, form the on insulation film
Two insulating layers, the film quality and crystal structure of insulation film are identical as second insulating layer, make to second insulating layer, insulation film and
When one insulating layer carries out dry etching formation one through the via hole of second insulating layer, insulation film and the first insulating layer, via hole
Side wall is not in etching chamfering at the interface between film layer, so that the top layer conductive layer for avoiding being deposited in via hole occurs
Fracture, it is ensured that the circuit stability of TFT substrate improves the reliability of TFT substrate.TFT substrate of the invention can be eliminated and run through
The etching chamfering that the via hole of multilayer dielectric layer occurs in film layer interface location avoids being deposited on the top layer conductive layer in via hole and occurs
Fracture, the circuit stability of TFT substrate are good.
Detailed description of the invention
For further understanding of the features and technical contents of the present invention, it please refers to below in connection with of the invention detailed
Illustrate and attached drawing, however, the drawings only provide reference and explanation, is not intended to limit the present invention.
In attached drawing,
Fig. 1 is the schematic diagram of the step S1 ' of the production method of existing TFT substrate；
Fig. 2 is the schematic diagram of the step S2 ' of the production method of existing TFT substrate；
Fig. 3 is the schematic diagram of the step S3 ' of the production method of existing TFT substrate；
Fig. 4 is the flow chart of the production method of TFT substrate of the invention；
Fig. 5 is the schematic diagram of the step S1 of the production method of TFT substrate of the invention；
Fig. 6 is the schematic diagram of the step S2 of the production method of TFT substrate of the invention；
Fig. 7 is the schematic diagram of the step S3 of the production method of TFT substrate of the invention；
Fig. 8 is the schematic diagram of the step S4 of the production method of TFT substrate of the invention；
Fig. 9 is the schematic diagram of the step S5 of the production method of TFT substrate of the invention；
Figure 10 is the schematic diagram of the step S6 of the production method of TFT substrate of the invention and the knot of TFT substrate of the invention
Structure schematic diagram.
Specific embodiment
Further to illustrate technological means and its effect adopted by the present invention, below in conjunction with preferred implementation of the invention
Example and its attached drawing are described in detail.
Referring to Fig. 4, the present invention provides a kind of production method of TFT substrate, include the following steps:
Step S1, referring to Fig. 5, providing a underlay substrate 10, bottom conductive layer 20 is formed on the underlay substrate 10.
Specifically, the underlay substrate 10 can be glass substrate.
Specifically, the material of the bottom conductive layer 20 is metal.
Further, when the material of bottom conductive layer 20 is metal, molybdenum (Mo), titanium (Ti), aluminium (Al), tantalum may be selected
(Ta) metals or its heap stack combination such as.
Step S2, referring to Fig. 6, successively the first insulating layer of successive sedimentation 30 and insulation are thin on the bottom conductive layer 20
Film 40.
Specifically, the film quality of the insulation film 40 and crystal structure are according to the second insulating layer 60 being subsequently formed thereon
Film quality and crystal structure selected, make the insulation film 40 and the film quality for being subsequently formed second insulating layer 60 thereon and
Crystal structure is identical.
Preferably, the material of the insulation film 40 is identical as second insulating layer 60 thereon is subsequently formed, certain institute
Stating the material of insulation film 40 also may be selected the material different from second insulating layer 60, can satisfy the film quality of insulation film 40 with
Crystal structure is identical as second insulating layer 60.
Step S3, referring to Fig. 7, forming interlayer functional layer 50 on the insulation film 40.
Specifically, the interlayer functional layer 50 can be made between dielectric layers in the prior art for plain conductor etc.
Structure.When the interlayer functional layer 50 is plain conductor, the material selection of the plain conductor selects the gold such as molybdenum, titanium, aluminium, tantalum
Category or its heap stack combination.
Step S4, referring to Fig. 8, depositing second insulating layer 60 on insulation film 40 and interlayer functional layer 50.
Specifically, the thickness of the insulation film 40 less than first insulating layer 30 thickness and be less than second insulating layer 60
Thickness.
Step S5, referring to Fig. 9, carrying out dry method quarter to the first insulating layer 30, insulation film 40 and second insulating layer 60
Erosion, forms the via hole 61 for running through the first insulating layer 30, insulation film 40 and second insulating layer 60, and the via hole 61 exposes bottom
The part of layer conductive layer 20.
Specifically, the step S5 specifically: be coated with photoresist in second insulating layer 60, figure is carried out to photoresist
Shapeization forms photoresist pattern, is shielding layer to the first insulating layer 30, insulation film 40, second insulating layer 60 using the photoresist pattern
Carry out dry etching, formed through the first insulating layer 30, insulation film 40, second insulating layer 60 via hole 61, finally remove light
Hinder pattern.
Step S6, referring to Fig. 10, forming top layer conductive layer 70 in second insulating layer 60, the top layer conductive layer 70 is logical
The via hole 61 is crossed to contact with bottom conductive layer 20.
Specifically, the material of the top layer conductive layer 70 is transparent conductive oxide or metal.When the top layer conductive layer
When 70 material is transparent conductive oxide, preferred tin indium oxide (ITO)；When the material of the top layer conductive layer 70 is metal
When, preferably molybdenum, titanium, aluminium, tantalum or its heap stack combination.
It should be noted that in the production method of above-mentioned TFT substrate, since the first insulating layer 30 is to connect with insulation film 40
Continuous deposition is formed, and is significantly reduced the lattice defect of the first insulating layer 30 and the interface of insulation film 40, is improved crystal
The continuity of structure, therefore when forming via hole 61 using dry etching, the side wall of via hole 61 is in the first insulating layer 30 and insulation
The position of the interface of film 40 is not in etching chamfering, simultaneously because the film quality of insulation film 40 and second insulating layer 60 and
Crystal structure is identical, even across the influence of 50 processing procedure of interlayer functional layer on insulation film 40 and atmospheric environment, in dry method
When etching forms via hole 61, the side wall of via hole 61 will not go out in insulation film 40 and the position of the interface of second insulating layer 60
Chamfering is now etched, subtracts direction of the width of the entirety of via hole 61 from far from bottom conductive layer 20 to by near-bottom conductive layer 20 gradually
Small, inclination angle is more gentle, to avoid when forming top layer conductive layer 70 in second insulating layer 60, top layer conductive layer 70 is in via hole
It is broken in 61, improves the uniformity of top layer conductive layer 70, it is ensured that the circuit stability of TFT substrate, that improves TFT substrate can
By property.
Referring to Fig. 10, the production method based on above-mentioned TFT substrate, the present invention also provides a kind of TFT substrates, comprising: lining
Substrate 10, the bottom conductive layer 20 on the underlay substrate 10, the first insulating layer 30 on bottom conductive layer 20,
Insulation film 40 on the first insulating layer 30, is set to insulation film 40 at the interlayer functional layer 50 on insulation film 40
Go up and cover the second insulating layer 60 of interlayer functional layer 50, through the second insulating layer 60, insulation film 40 and the first insulation
The via hole 61 of layer 30 and the top layer conductive being connected in second insulating layer 60 and via via hole 61 with bottom conductive layer 20
Layer 70；
The film quality and crystal structure of the insulation film 40 are identical as second insulating layer 60；
The first insulating layer 30 of institute and insulation film 40 successively successive sedimentation on underlay substrate.
Specifically, the material of the underlay substrate 10 is glass.
Specifically, the material of the bottom conductive layer 20 is metal.
Preferably, the material of the insulation film 40 is identical as second insulating layer 60, the material of certain insulation film 40
The material different from second insulating layer 60 also may be selected in material, and the film quality and crystal structure and second that can satisfy insulation film 40 are absolutely
Edge layer 60 is identical.
Specifically, the thickness of the insulation film 40 less than first insulating layer 30 thickness and be less than second insulating layer 60
Thickness.
Specifically, the interlayer functional layer 50 is plain conductor.
Specifically, the material of the top layer conductive layer 70 is transparent conductive oxide or metal.
It should be noted that above-mentioned TFT substrate, since the first insulating layer 30 is formed with insulation film 40 for successive sedimentation,
The lattice defect of the first insulating layer 30 and the interface of insulation film 40 is significantly reduced, the continuous of crystal structure is improved
Property, therefore the side wall of via hole 61 is not in etching chamfering in the position of the first insulating layer 30 and the interface of insulation film 40,
Simultaneously because insulation film 40 is identical with crystal structure with the film quality of second insulating layer 60, the side wall of via hole 61 is in insulation film 40
Etching chamfering will not occur with the position of the interface of second insulating layer 60, lead the width of the entirety of via hole 61 from far from bottom
Electric layer 20 is gradually reduced to the direction by near-bottom conductive layer 20, and inclination angle is more gentle, to avoid top layer conductive layer 70 in mistake
It is broken in hole 61, improves the uniformity of top layer conductive layer 70, it is ensured that the circuit stability of TFT substrate improves TFT substrate
Reliability.
In conclusion the production method of TFT substrate of the invention, successively successive sedimentation one first is exhausted on bottom conductive layer
Edge layer and an insulation film form second insulating layer after then forming interlayer functional layer on insulation film on insulation film,
The film quality and crystal structure of insulation film are identical as second insulating layer, make to second insulating layer, insulation film and the first insulating layer
When carrying out dry etching formation one through the via hole of second insulating layer, insulation film and the first insulating layer, the side wall of via hole is in film
It is not in etching chamfering at interface between layer, so that the top layer conductive layer for avoiding being deposited in via hole is broken, really
The circuit stability for protecting TFT substrate, improves the reliability of TFT substrate.TFT substrate of the invention can be eliminated exhausted through multilayer
The etching chamfering that the via hole of edge layer occurs in film layer interface location avoids being deposited on the top layer conductive layer in via hole and is broken,
The circuit stability of TFT substrate is good.
The above for those of ordinary skill in the art can according to the technique and scheme of the present invention and technology
Other various corresponding changes and modifications are made in design, and all these change and modification all should belong to the appended right of the present invention
It is required that protection scope.
Claims (8)
1. a kind of production method of TFT substrate characterized by comprising
One underlay substrate (10) are provided, form bottom conductive layer (20) on the underlay substrate (10)；
Successively the first insulating layer of successive sedimentation (30) and insulation film (40) on the bottom conductive layer (20)；
Interlayer functional layer (50) are formed on the insulation film (40)；
Second insulating layer (60) are deposited on insulation film (40) and interlayer functional layer (50)；
Dry etching is carried out to the first insulating layer (30), insulation film (40) and second insulating layer (60), is formed through first absolutely
The via hole (61) of edge layer (30), insulation film (40) and second insulating layer (60), the via hole (61) expose bottom conductive layer
(20) part；
Formed on second insulating layer (60) top layer conductive layer (70), the top layer conductive layer (70) by the via hole (61) with
Bottom conductive layer (20) contact；
The film quality and crystal structure of the insulation film (40) are identical as second insulating layer (60)；
The material of the insulation film (40) is identical as second insulating layer (60).
2. the production method of TFT substrate as described in claim 1, which is characterized in that the material of the bottom conductive layer (20)
For metal.
3. the production method of TFT substrate as described in claim 1, which is characterized in that the material of the top layer conductive layer (70)
For transparent conductive oxide or metal.
4. the production method of TFT substrate as described in claim 1, which is characterized in that the interlayer functional layer (50) is metal
Conducting wire.
5. the production method of TFT substrate as described in claim 1, which is characterized in that formed through the first insulating layer (30), absolutely
The detailed process of edge film (40) and the via hole (61) of second insulating layer (60) are as follows: be coated with photoresist on second insulating layer (60)
Material is patterned photoresist to form photoresist pattern, using the photoresist pattern as shielding layer to the first insulating layer (30),
Insulation film (40), second insulating layer (60) carry out dry etching, formed through the first insulating layer (30), insulation film (40),
The via hole (61) of second insulating layer (60) finally removes photoresist pattern.
6. the production method of TFT substrate as described in claim 1, which is characterized in that the thickness of the insulation film (40) is small
Thickness in the first insulating layer (30) and the thickness less than second insulating layer (60).
7. a kind of TFT substrate characterized by comprising underlay substrate (10), the bottom being set on the underlay substrate (10) are led
Electric layer (20), the first insulating layer (30) being set on bottom conductive layer (20), the insulation film being set on the first insulating layer (30)
(40), be set to insulation film (40) on interlayer functional layer (50), be set to insulation film (40) on and cover interlayer functional layer
(50) second insulating layer (60), through the second insulating layer (60), the mistake of insulation film (40) and the first insulating layer (30)
It hole (61) and is set on second insulating layer (60) and the top layer conductive that is connected via via hole (61) with bottom conductive layer (20)
Layer (70)；
The film quality and crystal structure of the insulation film (40) are identical as second insulating layer (60)；
Institute the first insulating layer (30) and insulation film (40) successively successive sedimentation on underlay substrate；
The material of the insulation film (40) is identical as second insulating layer (60).
8. TFT substrate as claimed in claim 7, which is characterized in that the material of the bottom conductive layer (20) is metal；
The material of the top layer conductive layer (70) is transparent conductive oxide or metal；
The interlayer functional layer (50) is plain conductor；
Thickness of the thickness of the insulation film (40) less than the first insulating layer (30) and the thickness less than second insulating layer (60).
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| CN111583820B (en) * | 2020-05-14 | 2022-04-08 | Tcl华星光电技术有限公司 | LED lamp panel and preparation method thereof |
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