CN111583820B - LED lamp panel and preparation method thereof - Google Patents
LED lamp panel and preparation method thereof Download PDFInfo
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- CN111583820B CN111583820B CN202010406099.0A CN202010406099A CN111583820B CN 111583820 B CN111583820 B CN 111583820B CN 202010406099 A CN202010406099 A CN 202010406099A CN 111583820 B CN111583820 B CN 111583820B
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Abstract
The invention provides an LED lamp panel and a preparation method thereof, wherein the LED lamp panel comprises a first metal layer; the first insulating layer covers the first metal layer, and a first opening is formed in the first insulating layer corresponding to the first metal layer; the second metal layer is correspondingly arranged above the first metal layer; and a conductive layer disposed over the first metal layer, the first insulating layer, and the second metal layer. The LED lamp panel and the preparation method thereof have the beneficial effects that the material of the second insulating layer is changed, the size of the opening is increased or the size of the second metal layer is reduced, so that the phenomenon that the conducting layer cracks on the inner side wall of the opening is avoided, the conductivity between the conducting layer and each conducting film layer is improved, and the response speed of the LED lamp panel is improved.
Description
Technical Field
The application relates to the field, in particular to an LED lamp panel and a preparation method thereof.
Background
The mini LED is a novel LED display technology derived on the basis of small-distance LEDs in recent years, and mainly comprises a mini LED backlight and a mini LED direct display. AM mini LED technique to TFT is as drive circuit, realizes the drive of Active matrix formula (Active matrix, AM mini LED), compares PM mini LED's advantage: the overall design cost is reduced while the spacing between the LEDs is reduced. The possibility of higher partition of the mini LED backlight is realized, and the possibility of higher resolution of the mini LED direct display is realized.
One of the schemes that can reduce the cost of the AM mini LED is: the requirements of high reflectivity and anti-reflectivity are met by combining multiple layers of films by adjusting the refractive index n, the light absorption coefficient k and the film thickness t of the inorganic film, so that a white reflecting film in a mini LED BLU and black ink in a mini LED direct display can be replaced, and the purpose of reducing the cost is achieved. The inorganic composite film is insulating and can replace the existing PV (SiNx) insulating layer, but as the requirements on reflectivity and anti-reflectivity are higher, the film layer structure is more complex, the DRY etching rate ratio difference of films with different refractive indexes n is large, and as shown in FIG. 3, the ITO climbing position of a bonding area is broken, and bonding signal conduction cannot be carried out.
Disclosure of Invention
In order to solve the technical problems, the invention provides an LED lamp panel and a preparation method thereof, which are used for solving the technical problems that in the prior art, due to different etching rates of different reflecting layers, the side wall of an opening is not smooth, ITO is easy to break at the side wall of the opening, and therefore signal conduction of a bonding area cannot be carried out.
The embodiment of the application provides an LED lamp panel, which comprises a first metal layer; the first insulating layer covers the first metal layer, and a first opening is formed in the first insulating layer corresponding to the first metal layer; the second metal layer is correspondingly arranged above the first metal layer; and a conductive layer disposed over the first metal layer, the first insulating layer, and the second metal layer.
Furthermore, the second metal layer is arranged in the first opening, and two sides of the second metal layer extend to the first insulating layer.
Further, the LED lamp panel further comprises a second insulating layer, the second insulating layer is arranged on one side of the first insulating layer, the second insulating layer covers the first insulating layer and the second metal layer, a plurality of second through holes are formed in the position, corresponding to the second metal layer, of the second insulating layer, and the conducting layer covers the second insulating layer and the second metal layer.
Further, the material of the second insulating layer includes a silicon nitride material.
Furthermore, the second metal layer is arranged in the first opening, and a first gap is formed between the outer side wall of the second metal layer and the inner side wall of the first opening.
Further, the conductive layer covers the first insulating layer, the second metal layer, and the first metal layer exposed in the first gap.
Further, a second insulating layer of the LED lamp panel is arranged on the first insulating layer, and a gap is formed between the second insulating layer and the conducting layer; the second insulating layer is a laminated structure with at least two layers of different reflectivity.
The invention also provides a preparation method of the LED lamp panel, which comprises the following steps: preparing a first metal layer; preparing a first insulating layer by using a photomask, wherein the first insulating layer covers the first metal layer; etching a first opening at the position of the first insulating layer corresponding to the first metal layer; preparing a second metal layer corresponding to the first metal layer; preparing a conductive layer on the second metal layer, wherein the conductive layer is disposed over the first metal layer, the first insulating layer, and the second metal layer.
Further, the LED lamp panel the second metal layer is provided with in the first opening or locate in the first opening and both sides extend to on the first insulation layer.
Further, the LED lamp panel further comprises the following steps after the step of preparing the second metal layer: preparing a second insulating layer on the second metal layer and the first insulating layer through a photomask; and etching a plurality of second through holes above the second insulating layer corresponding to the second metal layer, wherein the conducting layer covers the second insulating layer and the outer surface of the second metal layer.
The LED lamp panel and the preparation method thereof have the beneficial effects that the material of the second insulating layer is changed, the size of the opening is increased or the size of the second metal layer is reduced, so that the phenomenon that the conducting layer cracks on the inner side wall of the opening is avoided, the conductivity between the conducting layer and each conducting film layer is improved, and the response speed of the LED lamp panel is improved.
Drawings
The technical solution and other advantages of the present application will become apparent from the detailed description of the embodiments of the present application with reference to the accompanying drawings.
Fig. 1 is a schematic view of a structure of an LED lamp panel in embodiment 1.
Fig. 2 is a sectional view taken at the position a in fig. 1.
Fig. 3 is a schematic view of a partial structure of an LED lamp panel in the background art.
Fig. 4 is a schematic diagram of a structure of the LED lamp panel in embodiment 2.
Fig. 5 is a B-position sectional view in fig. 4.
Fig. 6 illustrates a schematic diagram of a structure of an LED lamp panel in embodiment 3.
Fig. 7 is a cross-sectional view taken at the position C in fig. 6.
Reference numerals in the figures
10 a first metal layer; 20 a first insulating layer;
30 a second metal layer; 40 a second insulating layer;
50 a conductive layer; 21 a first opening;
41 second opening holes; 42 third opening.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. It is to be understood that the embodiments described are only a few embodiments of the present application and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
In this application, unless expressly stated or limited otherwise, the first feature "on" or "under" the second feature may comprise direct contact of the first and second features, or may comprise contact of the first and second features not directly but through another feature in between. Also, the first feature being "on," "above" and "over" the second feature includes the first feature being directly on and obliquely above the second feature, or merely indicating that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature includes the first feature being directly under and obliquely below the second feature, or simply meaning that the first feature is at a lesser elevation than the second feature.
The following disclosure provides many different embodiments or examples for implementing different features of the application. In order to simplify the disclosure of the present application, specific example components and arrangements are described below. Of course, they are merely examples and are not intended to limit the present application. Moreover, the present application may repeat reference numerals and/or letters in the various examples, such repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed. In addition, examples of various specific processes and materials are provided herein, but one of ordinary skill in the art may recognize applications of other processes and/or use of other materials.
Example 1
As shown in fig. 1 and fig. 2, in the present embodiment, the LED lamp panel of the invention includes a first metal layer 10, a first insulating layer 20, a second metal layer 30, a second insulating layer 40, and a conductive layer 50.
The first metal layer 10 is disposed on a substrate, and is made of molybdenum (Mo), aluminum (Al), copper (Cu), titanium (Ti), or an alloy, which has a good conductive effect.
The first insulating layer 20 is disposed on the substrate and covers the upper surface of the first metal layer 10, a first opening 21 is disposed at a position of the first insulating layer 20 corresponding to the first metal layer 10, and a lower surface of the first opening 21 is disposed on the first metal layer 10, that is, the first metal layer 10 is partially exposed out of the first opening 21 for realizing subsequent connection with the second metal layer 30.
The second metal layer 30 is disposed in the first opening 21, and two ends of the second metal layer extend to a side surface of the first insulating layer 20 away from the second metal layer 30, the material of the second metal layer 30 is the same as that of the first metal layer 10, and the material includes molybdenum (Mo), aluminum (Al), copper (Cu), titanium (Ti), or an alloy, which has a good conductive effect.
The second insulating layer 40 is generally a DBR layer, the DBR (Distributed Bragg Reflector) layer is a layered structure with two different refractive indexes and different material periods alternating, which not only has good insulating performance, but also has good ability to reflect light, and is usually used as a reflective layer of a mini-led chip, however, due to the characteristic of the DBR layer, after the DBR layer is provided with a through hole, the included angle between the hole wall and the bottom surface of the hole is an acute angle or a right angle, when the conductive layer 50 is prepared subsequently, since the conductive layer 50 is attached to the hole wall and the bottom surface of the through hole provided in the first insulating layer 20, in the prior art, the conductive layer 50 may generate cracks at the junction between the hole wall and the bottom surface of the hole, and even may be seriously disconnected between the hole wall and the bottom surface of the hole, thereby causing poor subsequent electrical connection and causing technical problems of display panel failure.
In this embodiment, the second insulating layer 40 is replaced by a passivation layer, the second insulating layer 40 is disposed on the upper surfaces of the second metal layer 30 and the first insulating layer 20, a plurality of second openings 41 are disposed in a region of the second insulating layer 40 corresponding to the second metal layer 30, and a bottom surface of any one of the second openings 41 is disposed on the upper surface of the second metal layer 30, so as to achieve conduction between the conductive layer 50 and the second metal layer 30.
The conductive layer 50 is disposed on the upper surface of the second insulating layer 40, specifically, the conductive layer 50 is connected to the second metal layer 30 along the hole wall of the second opening, and the conductive layer 50 is used for being connected to a subsequent ACF glue, so as to achieve conduction between the ACF glue and the first metal layer 30.
In order to better explain the present invention, the embodiment further provides a method for manufacturing an LED lamp panel, which includes steps S1) -S7), and the technical problem that the conductive layer is easily broken at the opening hole is solved by replacing the second insulating layer with an inorganic material.
S1) providing a substrate on which a first metal layer is prepared.
S2) preparing a first insulating layer by using a mask, wherein the first insulating layer covers the first metal layer and is used to protect the first metal layer from being invaded by external moisture.
S3) etching a first opening 21 at a position of the first insulating layer corresponding to the first metal layer to expose the first metal layer.
S4) preparing a second metal layer on the exposed first metal layer, wherein the second metal layer covers the inner sidewall of the first opening 21 and both ends of the second metal layer extend onto the first insulating layer.
S5) preparing a second insulating layer on the second metal layer, wherein the material of the second insulating layer is an inorganic material.
S6) etching a plurality of second openings on the second insulating layer corresponding to the second metal layer, wherein the second metal layer is partially exposed out of the second openings, which is convenient for realizing subsequent conduction.
S7) preparing a conductive layer on the second insulating layer, wherein the conductive layer is conducted with the second metal layer along the inner wall of the second opening.
The beneficial effects of this embodiment are that, according to the LED lamp panel and the manufacturing method thereof of this embodiment, by changing the material of the second insulating layer, that is, replacing the second insulating layer with a single inorganic material, it is ensured that the etching rate of the material is uniform, so that the opening after the etching is completed has a smooth and excessive inner side wall, and the conductive layer is prevented from cracking at the inner side wall of the opening, thereby improving the conductivity between the conductive layer and each conductive film layer, and increasing the response speed of the LED lamp panel.
Example 2
As shown in fig. 4, in this embodiment, the LED lamp panel of the invention includes a first metal layer 10, a first insulating layer 20, a second metal layer 30, a second insulating layer 401, and a conductive layer 50.
The first metal layer 10 is disposed on a substrate, and is made of molybdenum (Mo), aluminum (Al), copper (Cu), titanium (Ti), or an alloy, which has a good conductive effect.
The first insulating layer 20 is disposed on the substrate and covers the upper surface of the first metal layer 10, a first opening 21 is disposed at a position of the first insulating layer 20 corresponding to the first metal layer 10, and a lower surface of the first opening 21 is disposed on the first metal layer 10, that is, the first metal layer 10 is partially exposed out of the first opening 21 for realizing subsequent connection with the second metal layer 30.
The second metal layer 30 is disposed in the first opening 21, and two ends of the second metal layer extend to a side surface of the first insulating layer 20 away from the second metal layer 30, the material of the second metal layer 30 is the same as that of the first metal layer 10, and the material includes molybdenum (Mo), aluminum (Al), copper (Cu), titanium (Ti), or an alloy, which has a good conductive effect.
The second insulating layer 40 is generally a DBR layer, the DBR (Distributed Bragg Reflector) layer is a layered structure with two different refractive indexes and different material periods alternating, which not only has good insulating performance, but also has good ability to reflect light, and is usually used as a reflective layer of a mini-led chip, however, due to the characteristic of the DBR layer, after the DBR layer is provided with a through hole, the included angle between the hole wall and the bottom surface of the hole is an acute angle or a right angle, when the conductive layer 50 is prepared subsequently, since the conductive layer 50 is attached to the hole wall and the bottom surface of the through hole provided in the first insulating layer 20, in the prior art, the conductive layer 50 may generate cracks at the junction between the hole wall and the bottom surface of the hole, and even may be seriously disconnected between the hole wall and the bottom surface of the hole, thereby causing poor subsequent electrical connection and causing technical problems of display panel failure.
As shown in fig. 4 and fig. 5, in the present embodiment, the second insulating layer 40 is still a DBR layer, the second insulating layer 40 is disposed on the upper surfaces of the second metal layer 30 and the first insulating layer 20, a third opening 42 is disposed in a region of the second insulating layer 40 corresponding to the second metal layer 30, and a bottom surface of the third opening 42 is disposed on the upper surface of the second metal layer 30 for realizing conduction between the conductive layer 50 and the second metal layer 30, wherein the third opening 42 exposes the upper surface of the second metal layer 30, and an area of a region of the second metal layer 30 exposed by the third opening 42 accounts for 80% to 95% of an area of the entire second metal layer 30.
The conductive layer 50 is disposed on the upper surface of the second insulating layer 40, specifically, the conductive layer 50 is connected to the second metal layer 30 along the hole wall of the third opening 42, since the area of the second metal layer 30 exposed out of the third opening 42 accounts for 80% to 95% of the entire area of the second metal layer 30, the conductive layer 50 can completely cover the second metal layer 30, thereby avoiding a phenomenon of poor conductivity of the conductive layer 50 due to cracks existing between the conductive layer 50 and the hole wall of the third opening 42, and the conductive layer 50 is used for being connected to a subsequent ACF glue, thereby realizing conduction between the ACF glue and the first metal layer 30.
In order to better explain the present invention, the embodiment further provides a method for manufacturing an LED lamp panel, and the specific steps include S1) -S7), increasing the contact area between the conductive layer and the second metal layer by increasing the size of the second opening, and increasing the conductivity between the conductive layer and the second metal layer.
S1) providing a substrate on which a first metal layer is prepared.
S2) preparing a first insulating layer by using a mask, wherein the first insulating layer covers the first metal layer and is used to protect the first metal layer from being invaded by external moisture.
S3) etching a first opening 21 at a position of the first insulating layer corresponding to the first metal layer to expose the first metal layer.
S4) preparing a second metal layer on the exposed first metal layer, wherein the second metal layer covers the inner sidewall of the first opening 21 and both ends of the second metal layer extend onto the first insulating layer.
S5) preparing a second insulating layer on the second metal layer, wherein the second insulating layer is a DBR layer and has a good light reflection effect.
S6) etching a plurality of second openings on the second insulating layer corresponding to the second metal layer, wherein the bottom area of the second openings is 70% -90% of the area of the upper surface of the second metal layer.
S7) preparing a conducting layer on the second insulating layer, wherein the conducting layer is conducted with the second metal layer along the inner wall of the second opening, and the conducting layer can be flatly arranged on the second metal layer due to the fact that the bottom area of the second opening is 70% -90% of the area of the upper surface of the second metal layer, and the conducting rate of the conducting layer and the second metal layer can be improved.
The beneficial effects of this embodiment lie in, the size of the second insulating layer trompil is changed through the size of this embodiment to LED lamp plate and preparation method thereof, is about to the size grow of second insulating layer trompil, increases the area of contact between conducting layer and the second metal level, promotes the conduction rate of conducting layer and second metal level, avoids the crackle that the conducting layer produced in trompil inside wall department to cause harmful effects to the conduction rate of LED lamp plate, improves the conductivity between conducting layer and each conductive film layer, promotes the response speed of LED lamp plate.
Example 3
As shown in fig. 6 and 7, in this embodiment, the LED lamp panel of the invention includes a first metal layer 10, a first insulating layer 20, a second metal layer 30, a second insulating layer 402, and a conductive layer 50.
The first metal layer 10 is disposed on a substrate, and is made of molybdenum (Mo), aluminum (Al), copper (Cu), titanium (Ti), or an alloy, which has a good conductive effect.
The first insulating layer 20 is disposed on the substrate and covers the upper surface of the first metal layer 10, a first opening 21 is disposed at a position of the first insulating layer 20 corresponding to the first metal layer 10, and a lower surface of the first opening 21 is disposed on the first metal layer 10, that is, the first metal layer 10 is partially exposed out of the first opening 21 for realizing subsequent connection with the second metal layer 30.
The second metal layer 30 is disposed in the first opening 21, and a gap is formed between the inner side walls of the first opening 21 and the outer side wall of the second metal layer 30, the material of the second metal layer 30 is the same as that of the first metal layer 10, and the material includes molybdenum (Mo), aluminum (Al), copper (Cu), titanium (Ti), or alloy, which has a good conductive effect.
The conductive layer 50 is disposed on the upper surfaces of the second metal layer 30 and the first insulating layer 20, specifically, the conductive layer 50 is connected to the second metal layer 30 along the hole wall of the second opening, and the conductive layer 50 is used for being connected to a subsequent ACF glue, so as to achieve conduction between the ACF glue and the first metal layer 30.
In this embodiment, since the first metal layer 10 is directly covered by the conductive layer 50, in order to ensure the sealing performance of the conductive layer 50, the outer dimension of the second metal layer 30 is smaller than the inner dimension of the first opening 21, and the gap between the outer sidewall of the second metal layer 30 and the inner sidewall of the first opening 21 is greater than one third of the outer dimension of the second metal layer 30, so that the conductive layer 50 can completely fit the gap between the outer sidewall of the second metal layer 30 and the inner sidewall of the first opening 21.
The second insulating layer 40 is generally a DBR layer, the DBR (Distributed Bragg Reflector) layer is a layered structure with two different refractive indexes and different material periods alternating, which not only has good insulating performance, but also has good ability to reflect light, and is usually used as a reflective layer of a mini-led chip, however, due to the characteristic of the DBR layer, after the DBR layer is provided with a through hole, the included angle between the hole wall and the bottom surface of the hole is an acute angle or a right angle, when the conductive layer 50 is prepared subsequently, since the conductive layer 50 is attached to the hole wall and the bottom surface of the through hole provided in the first insulating layer 20, in the prior art, the conductive layer 50 may generate cracks at the junction between the hole wall and the bottom surface of the hole, and even may be seriously disconnected between the hole wall and the bottom surface of the hole, thereby causing poor subsequent electrical connection and causing technical problems of display panel failure.
In this embodiment, the second insulating layer 40 is a DBR layer, and the second insulating layer 40 is not overlapped with the first metal layer 10 in the vertical direction on the upper surface of the first insulating layer 20, i.e. the second insulating layer 40 is not in contact with the conductive layer 50 to prevent the conductive layer 50 from cracking.
In order to better explain the present invention, this embodiment further provides a method for manufacturing an LED lamp panel, which includes steps S1-S6), removing a DBR layer (second insulating layer) in a region of the first metal layer and the second metal layer by a large area, and optimizing sizes of the second metal layer and the conductive layer, so as to ensure that the second metal layer is not invaded by external moisture, and simultaneously avoid adverse effects of the DBR layer on the conductive layer.
S1) providing a substrate on which a first metal layer is prepared.
S2) preparing a first insulating layer by using a mask, wherein the first insulating layer covers the first metal layer and is used to protect the first metal layer from being invaded by external moisture.
S3) etching a first opening 21 at a position of the first insulating layer corresponding to the first metal layer to expose the first metal layer.
S4) preparing a second metal layer on the exposed first metal layer, wherein the second metal layer covers the first opening 21 and a gap is formed between the outer sidewall of the second metal layer and the inner sidewall of the first opening 21.
S5) preparing a second insulating layer on the first insulating layer, wherein the second insulating layer is a DBR layer, and removing the second insulating layer corresponding to the first metal layer through a mask.
S6) preparing a conducting layer on the second metal layer and the first insulating layer, wherein the conducting layer covers the outer side wall of the second metal layer along the inner wall of the first opening 21, and the conducting layer can completely cover the outer side wall of the second metal layer due to a gap between the outer side wall of the second metal layer and the inner side wall of the first opening 21, so that the purpose of isolating external water and oxygen is achieved.
The beneficial effects of this embodiment lie in that, according to the LED lamp panel and the manufacturing method thereof of this embodiment, the position of the second insulating layer is changed, that is, the second insulating layer is arranged in an isolated manner from the conductive layer, and the conductive layer is directly arranged above the first insulating layer and the second metal layer, so that the adverse effect of the hole wall of the second insulating layer on the conductive layer is fundamentally eradicated, and the conductive layer is prevented from cracking at the inner side wall of the opening, thereby improving the conductivity between the conductive layer and each conductive film layer, and improving the response speed of the LED lamp panel.
The above description of the embodiments is only for assisting understanding of the technical solutions and the core ideas thereof; those of ordinary skill in the art will understand that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; such modifications or substitutions do not depart from the spirit and scope of the present disclosure as defined by the appended claims.
Claims (2)
1. An LED lamp panel, which is characterized by comprising
A first metal layer;
the first insulating layer covers the first metal layer, and a first opening is formed in the first insulating layer corresponding to the first metal layer;
the second metal layer is correspondingly arranged above the first metal layer; and
a conductive layer disposed over the first metal layer, the first insulating layer, and the second metal layer;
the second metal layer is arranged in the first opening, and a first gap is formed between the outer side wall of the second metal layer and the inner side wall of the first opening;
the conducting layer covers the first insulating layer, the second metal layer and the first metal layer exposed in the first gap;
the second insulating layer is arranged on the first insulating layer and has a gap with the conducting layer; the second insulating layer is a laminated structure with at least two layers of different reflectivity.
2. A preparation method of an LED lamp panel is characterized by comprising the following steps:
preparing a first metal layer;
preparing a first insulating layer by using a photomask, wherein the first insulating layer covers the first metal layer;
etching a first opening at the position of the first insulating layer corresponding to the first metal layer;
preparing a second metal layer corresponding to the first metal layer;
preparing a second insulating layer on the second metal layer and the first insulating layer through a photomask;
etching a plurality of second through holes above the second insulating layer corresponding to the second metal layer, wherein the conducting layer covers the second insulating layer and the outer surface of the second metal layer;
preparing a conductive layer on the second metal layer, wherein the conductive layer is disposed over the first metal layer, the first insulating layer, and the second metal layer.
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| CN105655349B (en) * | 2016-01-05 | 2019-08-20 | 京东方科技集团股份有限公司 | Array substrate and preparation method thereof, display panel, display device |
| KR20190132215A (en) * | 2018-05-18 | 2019-11-27 | 서울반도체 주식회사 | Light emitting diode, light emitting diode module and display device having the same |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102751276A (en) * | 2012-06-01 | 2012-10-24 | 京东方科技集团股份有限公司 | Method for manufacturing array substrate, array substrate and display device |
| CN204945589U (en) * | 2015-10-14 | 2016-01-06 | 信利半导体有限公司 | A kind of array base palte and display device |
| CN107104106A (en) * | 2017-04-10 | 2017-08-29 | 武汉华星光电技术有限公司 | The preparation method and TFT substrate of TFT substrate |
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