CN107104098B - light sensing device - Google Patents
light sensing device Download PDFInfo
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- CN107104098B CN107104098B CN201710320564.7A CN201710320564A CN107104098B CN 107104098 B CN107104098 B CN 107104098B CN 201710320564 A CN201710320564 A CN 201710320564A CN 107104098 B CN107104098 B CN 107104098B
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
- H01L31/167—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by at least one potential or surface barrier
- H01L31/173—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by at least one potential or surface barrier formed in, or on, a common substrate
Abstract
The invention relates to a light sensing device, which comprises a first substrate, a light emitting diode, a light sensing unit and an active element electrically connected with the light sensing unit.
Description
The application is divisional application, female case application No. is: 201610124463.8；The applying date are as follows: March 4 in 2016
Day；Applicant are as follows: Youda Photoelectric Co., Ltd；Denomination of invention are as follows: light sensing apparatus.
Technical field
The present invention relates to a kind of sensing devices, and in particular to a kind of light sensing apparatus.
Background technique
In general, the backlight module that light sensing apparatus includes photo sensing panel and is hung on except photo sensing panel outside.
Backlight module is to issue light beam.Photo sensing panel is configured on the transmission path of light beam.Photo sensing panel include first substrate,
Array is arranged in multiple photosensitive units and multiple active members on first substrate.Multiple active members and multiple photosensitive units
It is electrically connected, to read photosensitive unit received signal.
The application mode of light sensing apparatus is polynary, by taking finger scan as an example, when user's finger touches light sensing apparatus,
The different light beam of the peaks and troughs meeting reflected intensity of fingerprint, and receive the multiple photosensitive units for respectively corresponding peaks and troughs
The reflected beams different to intensity.Whereby, light sensing apparatus can obtain the fingermark image of user.In order to making beam collimation
By photo sensing panel, to promote the performance of light sensing apparatus, backlight module need to use multiple prismatic lens.However, this measure is unfavorable
It is reduced in the cost of light sensing apparatus, and the thickness of light sensing apparatus is thinned and is not easy.In addition, though backlight module has used prism
Piece, but the light beam that backlight module issues still has part that can be transferred to photosensitive unit, and the problem of cause signal interference.
Summary of the invention
The technical problem to be solved by the present invention is in view of the above drawbacks of the prior art, provide a kind of light of good performance
Sensing device.
To achieve the goals above, the present invention provides a kind of light sensing apparatus, including first substrate, the first reflecting layer,
Light emitting diode, the first insulating layer, the second reflecting layer, photosensitive unit and the active member being electrically connected with photosensitive unit.The
One reflecting layer covers first substrate.Light emitting diode is located on the first reflecting layer.First insulating layer covers the first reflecting layer and hair
Optical diode.Second reflecting layer is configured on the first insulating layer and is located at right above light emitting diode.What light emitting diode issued
Light beam is penetrated behind the first reflecting layer and the reflection of the second reflecting layer from photosensitive unit branch.
In order to which above-mentioned purpose is better achieved, the present invention also provides a kind of light sensing apparatus, including first substrate, active
Element, photosensitive unit, light emitting diode and light-blocking structure.Active member is configured on first substrate.Photosensitive unit is configured at
It is electrically connected on first substrate and with active member.Photosensitive unit includes the first photosensitive electrode, relative to the first photosensitive electrode
Second photosensitive electrode and photosensitive layer.Photosensitive layer is located between the first photosensitive electrode and the second photosensitive electrode.First photosensitive electricity
Pole is between photosensitive layer and first substrate.Light emitting diode is configured on first substrate and is located at by photosensitive unit.Light-blocking knot
Structure and photosensitive unit and light emitting diode are positioned essentially at same plane, and are located at the two sides of photosensitive unit.
In order to which above-mentioned purpose is better achieved, the present invention also provides a kind of light sensing apparatus, including first substrate, first
Active member, the first insulating layer, reflecting electrode, light emitting diode, second insulating layer and photosensitive unit.First substrate, which has, to be held
Section.First active member is configured on the loading end of first substrate.First insulating layer covers the first active member and has the
One opening.First insulating layer has the side wall for defining the first opening.Reflecting electrode is located in the first opening and at least covers institute
State side wall.Light emitting diode is configured in the first opening.Reflecting electrode is around light emitting diode.Photosensitive unit is configured at second absolutely
In edge layer.Photosensitive unit includes the first photosensitive electrode.First photosensitive electrode be configured in second insulating layer and not with light-emitting diodes
Pipe in vertical direction in being overlapped.Vertical direction is parallel to the normal direction of loading end.
The technical effects of the invention are that:
Based on above-mentioned, in the light sensing apparatus of one embodiment of the invention, it is built in belonging to photosensitive unit in light emitting diode
Photo sensing panel in, therefore, backlight module is not required to additionally be set to outside photo sensing panel, so that light sensing apparatus is whole
Thickness can be thinned.Further, since light emitting diode is set between the first and second reflecting layer and photosensitive unit is set to second instead
It penetrates above layer, therefore the light beam that light emitting diode is issued can be pierced by light by after the reflection of the first and second reflecting layer by photosensitive unit
Sensing device, and be not easy to be strayed into the photosensitive layer of photosensitive unit.Whereby, the backlight being hung on except photo sensing panel outside can be improved
Signal interference problem caused by module.
In the light sensing apparatus of another embodiment of the present invention, in addition to because being built in belonging to photosensitive unit in light emitting diode
The thickness of light sensing apparatus entirety is set to be thinned in photo sensing panel outer, more by configuration light-blocking structure in light emitting diode
Two sides, the light beam that light emitting diode issues can stop by light-blocking structure, and be not easy to be strayed into the photosensitive layer of photosensitive unit.It borrows
This, can improve and be hung on signal interference problem caused by the backlight module except photo sensing panel outside.
In the light sensing apparatus of yet another embodiment of the invention, in addition to because being built in belonging to photosensitive unit in light emitting diode
Except so that the thickness of light sensing apparatus entirety is thinned in photo sensing panel, by the reflection for being looped around light emitting diode
Layer can concentrate the light beam that light emitting diode issues toward positive apparent direction.Whereby, when light sensing apparatus detection object, by object
The light beam of body reflection can be entered in corresponding photosensitive unit with lesser angle of reflection.In this way, what light sensing apparatus detected
Object image sharpness is just able to ascend, to obtain clearly object image.
Below in conjunction with the drawings and specific embodiments, the present invention will be described in detail, but not as a limitation of the invention.
Detailed description of the invention
Figure 1A to Fig. 1 F is the manufacturing process diagrammatic cross-section of the light sensing apparatus of one embodiment of the invention；
Fig. 2 is the diagrammatic cross-section of the light sensing apparatus of another embodiment of the present invention；
Fig. 3 is the diagrammatic cross-section of the light sensing apparatus of further embodiment of this invention；
Fig. 4 A to Fig. 4 F is the manufacturing process diagrammatic cross-section of the light sensing apparatus of yet another embodiment of the invention；
Fig. 5 is the diagrammatic cross-section of the light sensing apparatus of one embodiment of the invention；
Fig. 6 is the diagrammatic cross-section of the light sensing apparatus of another embodiment of the present invention.
Wherein, appended drawing reference
110,310,510 first substrate
120, the first reflecting layer 120A, 120B
130,130A, 130B light emitting diode
132,134,352,354 electrode
136 luminescent layers
140,160,330,520 first insulating layer
180,370,410,592 insulating layer
142,182,372,382,412,592a opening
150 second reflecting layer
170,364,560: the first photosensitive electrode
200,420,570 second photosensitive electrode
190,400,580 photosensitive layer
210,430,590 protective layer
220,340 viscoid
The surface 310a
320,360 conductive layer
322 light-shielding patterns
332 contact holes
350,540 light emitting diode
The top surface 350a
362 line patterns
380 light-blocking structures
The inner edge 380a
380b outer rim
The bottom surface 380c
The top surface 380d
390 reflecting layer
400a contact surface
510a loading end
522 first openings
524 side walls
526 second openings
530 reflecting electrodes
532 conductive patterns
540a point
550 second insulating layers
550A: second insulating layer (the second substrate)
552 thirds opening
1000,1000A, 1000B, 2000,3000,3000A light sensing apparatus
CH, CH1, CH2 channel layer
D, D1, D2 drain
D internal diameter
F object
GI gate insulation layer
G, G1, G2 grid
H1, h2, h3, H1, H2 distance
L, L1, L2, L3 light beam
PD photosensitive unit
S, S1, S2 source electrode
T, T1, T2 active member
W width
X horizontal direction
Y vertical direction
Specific embodiment
Structural principle and working principle of the invention are described in detail with reference to the accompanying drawing:
Figure 1A to Fig. 1 F is the manufacturing process diagrammatic cross-section of the light sensing apparatus of one embodiment of the invention.Please refer to figure
1A, firstly, providing first substrate 110.First substrate 110 can be light transmission first substrate or opaque/reflective first substrate.Citing
For, the material of light transmission first substrate can be glass, quartz, plastic cement or other suitable materials, opaque/reflective first substrate
Material can be wafer, ceramics or other suitable materials, but invention is not limited thereto.Then, the first reflecting layer 120 is formed, with
Cover first substrate 110.In the present embodiment, the first reflecting layer 120 can be conductive material, such as: metal, alloy, metal material
The nitride of material, the oxide of metal material, the nitrogen oxides of metal material or other opaque conductive materials or preceding
The stack layer of at least two kinds materials is stated, but invention is not limited thereto.
Then, light emitting diode 130 is configured on the first reflecting layer 120.In the present embodiment, light emitting diode 130
It can be rectilinear chip.In other words, the first and second electrode 132,134 of light emitting diode 130 can be located separately luminescent layer 136
Different two sides.However, the invention is not limited thereto, in other embodiments, light emitting diode can also be horizontal chip, i.e., the
One, two electrodes 132,134 are located at 136 the same side of luminescent layer or the chip of other appropriate patterns.136 material of luminescent layer includes the
One type semiconductor layer, active layers and the second type semiconductor layer, wherein the first type semiconductor layer is exemplified as P-type semiconductor, second
Half mould conductor layer is exemplified as N-type semiconductor.In other embodiments, 136 material of luminescent layer may also comprise the first type semiconductor layer
And second type semiconductor layer, and the first type semiconductor layer suitable materials different or other from the second half mould conductor layer polarity.
Then, the first insulating layer 140 is formed, with the first reflecting layer of covering 120 and light emitting diode 130.In the present embodiment, first absolutely
The material of edge layer 140 can for inorganic material (such as: silica, silicon nitride, silicon oxynitride or above-mentioned at least two kinds materials heap
Lamination), organic material or said combination.
Figure 1B is please referred to, then, in the present embodiment, alternative the first insulating layer of pattern 140, so that first is exhausted
Edge layer 140 has opening 142.In the present embodiment, opening 142 exposes the second electrode 134 of light emitting diode 130, opening
142 planimetric area and the planimetric area of the second electrode 134 of light emitting diode 130 do not limit the two substantially
Between relationship, as long as opening is 142 be overlapped at least partially with the second electrode 134 of light emitting diode 130.In the present embodiment, it is
The permission of subsequent technique, the opening 142 of the first insulating layer 140 can expose light emitting diode 130 second electrode 134 and
The first insulating layer near it, the i.e. planimetric area of opening 142 are greater than hanging down for the second electrode 134 of light emitting diode 130
Straight projected area, and opening 142 is be overlapped at least partially with the second electrode 134 of light emitting diode 130, but not limited to this.Please
C referring to Fig.1 then forms the second reflecting layer 150 and grid G.Second reflecting layer 150 and grid G are configured at the first insulating layer
On 140.In the present embodiment, grid G separated with the second reflecting layer 150 and grid G upright projection on first substrate 110 not with
Light emitting diode 130 is overlapped.On vertical direction y, light emitting diode 130 is covered in the second reflecting layer 150.In the present embodiment,
First reflecting layer 120 can exceed the edge in the second reflecting layer 150.In other words, the edge in the second reflecting layer 150 is in first substrate
Orthographic projection on 110 can be completely in the area in the first reflecting layer 120, but invention is not limited thereto.It is vertical in the present invention
Direction y is vertical with the surface of first substrate 110.Horizontal direction x is parallel with the surface of first substrate 110, and vertical direction y and water
Square orthogonal to x, specifically vertical direction y and horizontal direction x angle are an angle of 90 degrees.
In the present embodiment, the second reflecting layer 150 can insert the opening 142 of the first insulating layer 140, with and light emitting diode
130 second electrode 134 connects.In the present embodiment, for the flatness of subsequent technique, the second reflecting layer 150 is only located at opening
In 142, but not limited to this.In other embodiments, the second reflecting layer 150 also may extend across the edge of opening 142, covering opening
The first insulating layer 140 near 142.The first electrode 132 of light emitting diode 130 can be connect with the first reflecting layer 120.Change speech
It, in the present embodiment, the first and second reflecting layer 120,150 is other than the light beam to reflect the sending of light emitting diode 130, portion
The first and second reflecting layer 120,150 divided also can be used as the driver circuit of light emitting diode 130.This measure facilitates light sensing apparatus
Structure simplify.However, the invention is not limited thereto, in other embodiments, light emitting diode 130 is not also optionally with
One reflecting layer 120, the second reflecting layer 150 or combinations thereof are electrically connected.
Fig. 1 D is please referred to, then, gate insulating layer 160 is formed, to cover grid G and the second reflecting layer 150.In this reality
Apply in example, the material of gate insulating layer 160 can for inorganic material (such as: silica, silicon nitride, silicon oxynitride or it is above-mentioned at least
The stack layer of two kinds of materials), organic material or said combination.Then, channel layer CH is formed on gate insulating layer 160.Channel
Layer CH is set to above grid G.In the present embodiment, channel layer CH can be single or multi-layer structure, and it includes amorphous silicons, polycrystalline
Silicon, microcrystal silicon, monocrystalline silicon, organic semiconducting materials, oxide semiconductor material (such as: indium-zinc oxide, indium germanium zinc oxidation
Object or other suitable materials or combinations of the above) or other suitable materials or containing dopant (dopant) in upper
It states in material or said combination.
Fig. 1 D is please referred to, then, forms source S, drain D and the first photosensitive electrode 170.First photosensitive electrode 170, source
Pole S and drain D are located at same film layer.Source S and drain D are located on channel layer CH and part of grid pole insulating layer 160, and respectively
It is electrically connected with the two sides of channel layer CH.First photosensitive electrode 170 and one of source S, drain D (such as: drain D) electrically
Connection, the i.e. electrode (one of source electrode or drain electrode) that the first photosensitive electrode 170 is connect with it can be used as active member simultaneously
In electrode and photosensitive unit PD in electrode.Source S, drain D, channel layer CH and grid G constitute active member T.Source S,
Drain D and the first photosensitive electrode 170 are conductive material.For example, in the present embodiment, source S, drain D and first
The material of photosensitive electrode 170 can be the nitrogen of metal, alloy, the nitride of metal material, the oxide of metal material, metal material
The other conductive materials of oxide or at least two kinds of previous materials of stack layer.
Fig. 1 E is please referred to, then, forms insulating layer 180.Insulating layer 180 covers source S, drain D and partial insulative layer
170 and have opening 182.Opening 182 exposes the first photosensitive electrode 170.The material of insulating layer 180 can be inorganic material (example
Such as: silica, silicon nitride, silicon oxynitride or above-mentioned at least two kinds materials stack layer), organic material or said combination.It connects
, form photosensitive layer 190.Photosensitive layer 190 is set on the first photosensitive electrode 170.Photosensitive layer 190 inserts opening for insulating layer 180
Mouthfuls 182 and be electrically connected with the first photosensitive electrode 170.In the present embodiment, the material of photosensitive layer 190 is mainly that silicon is, for example,
SivOw, wherein v, w are not zero.Photosensitive layer 190 for example, includes the one first type semiconductor material layer sequentially stacked, one
Levy semiconductor material layer and a second type semiconductor material layer, and the first type semiconductor material layer and second type semiconductor material
The bed of material wherein one be p-type semiconductor material, it is another be n-type semiconductor.However, the invention is not limited thereto, in other implementations
In example, the material of photosensitive layer 190 can also be the one first type semiconductor material layer and a second type semiconductor material sequentially stacked
The bed of material, and the first type semiconductor material layer is different from second type semiconductor material layer polarity or the first type semiconductor material layer
With layer of intrinsic semiconductor material or other suitable materials.Then, the second photosensitive electrode 200 is formed on photosensitive layer 190.
Second photosensitive electrode 200 is set on photosensitive layer 190 and is electrically connected with photosensitive layer 190.In this present embodiment, the second photosensitive electricity
Pole 200 can expose the insulating layer 180 of part, i.e. the second photosensitive electrode 200 will not be overlapped in grid G, source S and channel C H
Example, but not limited to this.
First photosensitive electrode 170, photosensitive layer 190 and the second photosensitive electrode 200 constitute photosensitive unit PD.Active member T
It is electrically connected with photosensitive unit PD.Photosensitive unit PD is located at the surface in the second reflecting layer 150.Second photosensitive electrode 200 is
Light guide electrical pattern.In the present embodiment, indium tin oxide, indium-zinc oxide, aluminium tin can be selected in the material of the second photosensitive electrode 200
Oxide, aluminium zinc oxide, indium germanium zinc oxide, graphene, nano silver, nano carbon tube/bar or other suitable materials,
Or the stack layer of above-mentioned at least the two.Fig. 1 F is please referred to, then, forms protective layer 210, with 210 lower section of protective mulch
All components, such as: active member T, photosensitive unit PD etc..In the present embodiment, the material of protective layer 210 can be inorganic material
(such as: silica, silicon nitride, silicon oxynitride or above-mentioned at least two kinds materials stack layer), organic material or said combination.
Fig. 1 F is please referred to, light beam L1, L2, L3 that light emitting diode 130 issues can be by the first reflecting layer 120 and the second reflections
150 wherein at least one of layer or the first and second reflecting layer 120,150 are projected beside photosensitive unit PD with after grid G reflection.In detail
Yan Zhi, light beam L1 first can be reflected into the first reflecting layer 120 by the second reflecting layer 150, then, then be reflected by the first reflecting layer 120
And light sensing apparatus 1000 is pierced by beside the second reflecting layer 150；Light beam L2 can first by the first reflecting layer 120 reflection after directly by
Light sensing apparatus 1000 is pierced by beside second reflecting layer 150；Light beam L3 can be sequentially by the second reflecting layer 150, the first reflecting layer
120, grid G and the reflection of the first reflecting layer 120, then, by being pierced by light sensing apparatus 1000 beside active member T.Light beam L1,
After L2, L3 are pierced by light sensing apparatus 1000, corresponding photosensitive unit PD can be reflexed to by the finger of user or object, then is corresponded to
Photosensitive unit PD can receive light beam L1, L2, the L3 reflected by user's finger or object, and then obtain light sensing apparatus 1000
User finger or object image or its touch position.
Since light emitting diode 130 and photosensitive unit PD are located on same first substrate 110, that is to say, that luminous two
It is built in pole pipe 130 in photo sensing panel belonging to photosensitive unit PD, therefore, light sensing apparatus 1000 may not include positioned at light sensation
The backlight module outside panel is surveyed, so that the thickness of light sensing apparatus 1000 can substantially be thinned.Further, since light emitting diode
130 are set between the first and second reflecting layer 120,150 and photosensitive unit PD is set to the top of the second reflecting layer 150, therefore shine
Light beam L1, L2, L3 that diode 130 is issued are anti-by the first and second reflecting layer 120,150 wherein at least one or first and second
After penetrating layer 120,150 and grid G reflection, it can be pierced by light sensing apparatus 1000 from the place other than photosensitive unit PD, and be not easy
It is strayed into the photosensitive layer 190 of photosensitive unit PD.Whereby, it can improve and be hung on caused by the outer backlight module of photo sensing panel outside
Signal interference problem.
Fig. 2 is the diagrammatic cross-section of the light sensing apparatus of another embodiment of the present invention.The light sensing apparatus 1000A of Fig. 2 with
The light sensing apparatus 1000 of Fig. 1 F is similar therefore identical or corresponding element, is indicated with identical or corresponding label.Light sensation
Survey device 1000A and the difference of light sensing apparatus 1000 is: the light emitting diode 130A of light sensing apparatus 1000A and first is anti-
It is different from the light emitting diode 130 of light sensing apparatus 1000 and the first reflecting layer 120 to penetrate layer 120A.Below mainly with regard to this difference at
Illustrate, the two mutually exists together also please according to the label in Fig. 2 referring to preceding description, just no longer repeats in this.
Referring to figure 2., light sensing apparatus 1000A includes first substrate 110, the first reflecting layer for covering first substrate 110
120A, the light emitting diode 130A on the first reflecting layer 120A, covering the first reflecting layer 120A and light emitting diode 130A
The first insulating layer 140A, be configured on the first insulating layer 140A and be located at light emitting diode 130A right above the second reflecting layer
150, the photosensitive unit PD right above the second reflecting layer 150 and active member T being electrically connected with photosensitive unit PD.Hair
Light beam L1, L2, L3 that optical diode 130A is issued by the first reflecting layer 120 and 150 wherein at least one of the second reflecting layer or
First and second reflecting layer 120,150 is emitted beside photosensitive unit PD with after grid G reflection.
Unlike light sensing apparatus 1000, the light emitting diode 130A of light sensing apparatus 1000A is that horizontal shines
Diode.In other words, the first and second electrode 132,134 of light emitting diode 130A is located at the same side of luminescent layer 136.Citing and
Say that the first and second electrode 132,134 is located at side of the luminescent layer 136 far from the first reflecting layer 120A.Light emitting diode 130A can be saturating
Viscoid 220 is crossed to be fixed on the first reflecting layer 120A.The first electrode 132 of light emitting diode 130A can pass through conductive pattern
230 and first reflecting layer 120 be electrically connected, i.e. 230 one end of conductive pattern is connect with first electrode 132, and conductive pattern 230 is past
The first reflecting layer direction 120A extends, and 230 other end of conductive pattern is connect with the first reflecting layer 120A.First insulating layer 140A
Opening 142 only expose light emitting diode 130A second electrode 134, the second reflecting layer 150 filling opening 142 and with shine two
The second electrode 134 of pole pipe 130A is electrically connected.Light sensing apparatus 1000A have the advantages that it is similar with light sensing apparatus 1000 with
Effect is just no longer repeated in this.
Fig. 3 is the diagrammatic cross-section of the light sensing apparatus of further embodiment of this invention.The light sensing apparatus 1000B of Fig. 3 with
The light sensing apparatus 1000 of Fig. 1 is similar therefore identical or corresponding element, is indicated with identical or corresponding label.Light sensation
It surveys device 1000B and the main difference of light sensing apparatus 1000 is: the light emitting diode 130B and light of light sensing apparatus 1000B
The light emitting diode 130 of sensing device 1000 is different；In addition, the light emitting diode 130B of light sensing apparatus 1000B can not be with
Two reflecting layer 150B are electrically connected, and the first of the first reflecting layer 120B of light sensing apparatus 1000B and light sensing apparatus 1000
Reflecting layer 120 is slightly different.Below mainly with regard to illustrating at this difference, the two mutually exists together also please according to the label in Fig. 3 referring to before
It states bright, is just no longer repeated in this.
Referring to figure 3., light sensing apparatus 1000B includes first substrate 110, the first reflecting layer for covering first substrate 110
120B, the light emitting diode 130B on the first reflecting layer 120B, covering the first reflecting layer 120B and light emitting diode 130B
The first insulating layer 140B, be configured on the first insulating layer 140B and be located at light emitting diode 130B right above the second reflecting layer
150B, the photosensitive unit PD right above the second reflecting layer 150B and the active member T being electrically connected with photosensitive unit PD.
Light beam L1, L2, L3 that light emitting diode 130B is issued are by the first reflecting layer 120B and the second reflecting layer 150B wherein at least one
It is projected beside photosensitive unit PD with after grid G reflection in a or the first and second reflecting layer 120,150.
Unlike light sensing apparatus 1000, the light emitting diode 130B of light sensing apparatus 1000B is that horizontal shines
Diode.In other words, the first and second electrode 132,134 of light emitting diode 130B is located at the same side of luminescent layer 136.Luminous two
Pole pipe 130B can pass through viscoid 220 and be fixed on the first reflecting layer 120B.The first and second electrode 132 of light emitting diode 130B,
134 can be electrically connected with the driver circuit on the first reflecting layer 120B through conductive pattern 232,234 respectively respectively, i.e. conductive pattern
232 one end of case is connect with second electrode 134, and conductive pattern 232 extends toward the first reflecting layer direction 120A, and conductive pattern
232 other ends are connect with the first reflecting layer 120A, and 234 one end of conductive pattern is connect with first electrode 132, and conductive pattern 234
Extend toward the first reflecting layer direction 120A, and 234 other end of conductive pattern is connect with the first reflecting layer 120A, wherein conductive pattern
Case 232,234 is extended toward the first reflecting layer direction 120A on light emitting diode 130B difference side, i.e. the first reflecting layer 120A tool
There are first part (not shown) and second part (not shown), first part separates with second part, different to transmit
Current potential and first and second electrode 132 and 134 generation short circuit for preventing light emitting diode 130B.Therefore, conductive pattern 232 is past
The first part of first reflecting layer 120A is (not shown) to be extended, and conductive pattern 234 is the second part toward the first reflecting layer 120A
It is (not shown) to extend.Second reflecting layer 150B can not be connect with light emitting diode 130B, i.e. there is no appoint by the first insulating layer 140B
What opening 142, and the second reflecting layer 150B is set on the first insulating layer 140B above light emitting diode 130B.Light sensing dress
Setting 1000B has the advantages that and effect similar with light sensing apparatus 1000, just no longer repeats in this.
Fig. 4 A to Fig. 4 F is the manufacturing process diagrammatic cross-section of the light sensing apparatus of yet another embodiment of the invention.Please refer to figure
4A, firstly, providing first substrate 310.First substrate 310 can be light transmission first substrate or opaque/reflective first substrate.Citing
For, the material of light transmission first substrate can be glass, quartz, plastic cement or other suitable materials, opaque/reflective first substrate
Material can be wafer, ceramics or other suitable materials, but invention is not limited thereto.Then, conductive layer 320 is formed, with covering
First substrate 310.In the present embodiment, conductive layer 320 includes the grid G being separated from each other and light-shielding pattern 322.Grid G setting
In being located at same film layer on first substrate 310 and with light-shielding pattern 322.Conductive material can be selected in conductive layer 320, such as: metal,
Alloy, the nitride of metal material, the oxide of metal material, the nitrogen oxides of metal material or metal material with it is other
The stack layer of conductive material, but invention is not limited thereto.
A referring to figure 4. then forms the first insulating layer 330, to cover grid G and light-shielding pattern 322.First insulating layer
330 can have the contact hole 332 for exposing part light-shielding pattern 322.In the present embodiment, the material of the first insulating layer 330 can
For inorganic material (such as: silica, silicon nitride, silicon oxynitride or above-mentioned at least two kinds materials stack layer), organic material or
Said combination.Then, channel layer CH is formed on the first insulating layer 330.Channel layer CH is set to above grid G.In this implementation
In example, channel layer CH can be single or multi-layer structure, and it includes amorphous silicon, polysilicon, microcrystal silicon, monocrystalline silicon, organic semiconductors
Material, oxide semiconductor material (such as: indium-zinc oxide, indium germanium zinc oxide or other suitable materials or above-mentioned
Combination) other suitable materials or containing dopant (dopant) in above-mentioned material or said combination.
A referring to figure 4. then can be in formation viscoid 340 and light emitting diode 350 on the first insulating layer 330.It shines
Diode 350 can pass through viscoid 340 and be fixed on first substrate 310.In the present embodiment, light emitting diode 350 can be water
Flat light emitting diode.In other words, the first and second electrode 352,354 of light emitting diode 350 can be located at the same of luminescent layer 356
Side, but invention is not limited thereto.
A referring to figure 4. then forms conductive layer 360.In the present embodiment, the material of conductive layer 360 can be metal, conjunction
Gold, the nitride of metal material, the oxide of metal material, the nitrogen oxides of metal material or metal material are led with other
The stack layer of electric material, but invention is not limited thereto.Conductive layer 360 includes line pattern 362, source S, drain D and first
Photosensitive electrode 364.Line pattern 362, source S, drain D and the first photosensitive electrode 364 belong to same film layer.Line pattern
362 are electrically connected with the first electrode 352 of light emitting diode 350 and second electrode 354.Line pattern 362 can also insert
The contact hole 332 of one insulating layer 330, to be electrically connected with light-shielding pattern 322.For example, the line being connect with first electrode 352
Road pattern 362 can be described as first line pattern, and the line pattern 362 connecting with second electrode 354 can be described as the second line pattern,
Then first line pattern one end is connect with first electrode 352, and the first line pattern other end is via contact hole 332 and light-shielding pattern
322 connections, and second line pattern one end is connect with second electrode 354, the second line pattern other end is set to the first insulation
On layer 330, wherein first and second line pattern is separated, to transmit different current potentials and prevent light emitting diode 350
Short circuit occurs for first and second electrode 332 and 334.Source S and drain D are set on channel layer CH, and respectively with channel layer CH
Two sides be electrically connected.One of source S and drain D (such as: drain D) it is electrically connected with the first photosensitive electrode 364, and the
One photosensitive electrode 364 is be overlapped at least partially with light-shielding pattern 322.Source S, drain D, channel layer CH and grid G constitute master
Dynamic element T.The active member T of the present embodiment is using bottom-gate-type transistor as example.In other embodiments, active member T can be
The transistor of top gate-type transistors or other suitable types.
A referring to figure 4. then forms insulating layer 370.Insulating layer 370 cover light emitting diode 350, line pattern 362,
Source S and drain D.Insulating layer 370 has the opening 372 for exposing the first photosensitive electrode of part 364.The material of insulating layer 370
Can for inorganic material (such as: silica, silicon nitride, silicon oxynitride or above-mentioned at least two kinds materials stack layer), organic material
Or said combination.Then, on 372 edge of opening of insulating layer 370, light-blocking structure 380 is formed.Light-blocking structure 380 has sudden and violent
Reveal the opening 382 of the first photosensitive electrode of part 364.Light-blocking structure 380 also has the inner edge 380a, opposite for defining opening 382
The first top surface of outer rim 380b in inner edge 380a, the bottom surface 380c towards first substrate 310 and separate first substrate 310
380d.382 frontal projected area of opening of the light-blocking structure 380 of this example is less than 372 frontal projected area of opening of insulating layer 370,
And opening 382 is located in opening 372, i.e. inner edge 380a can distinctly cover inner edge and the first photosensitive electrode of part 364 of opening 372
For example, subsequent technique may make to have preferable permission.In other embodiments, 382 orthographic projection of opening of light-blocking structure 380
Area is greater than 372 frontal projected area of opening of insulating layer 370, and is open 372 in opening 382, may make photosensitive layer 400 just
Projected area becomes larger, i.e. photoinduction area becomes larger, and subsequent technique also may make to have preferable permission.Either, light-blocking structure
380 opening 382 is Chong Die with the opening 372 of insulating layer 370, and the edge of opening 382 is corresponding with the edge of opening 372.
B referring to figure 4. then forms reflecting layer 390.Reflecting layer 390 at least covers the outer rim 380b of light-blocking structure 380
And portion top surface 380d and expose the first photosensitive electrode of part 364.The material in reflecting layer 390 can be metal, alloy, metal
The nitride of material, the oxide of metal material, the other suitable material of nitrogen oxides of metal material or preceding
At least two kinds of material of stack layer is stated, but invention is not limited thereto.C referring to figure 4., then, on the first photosensitive electrode 364
Form photosensitive layer 400.Reflecting layer 390 still can expose photosensitive layer 400.Photosensitive layer 400 is located at the opening of light-blocking structure 380
In 382.Light-blocking structure 380 is located at least in the opposite sides of photosensitive layer 400.In the present embodiment, light-blocking structure 380 can be around sense
Photosphere 400.The material of photosensitive layer 400 is, for example, SivOw, and wherein v, w are not zero, but not limited to this.Photosensitive layer 400 is, for example,
Including one first type semiconductor material layer, a layer of intrinsic semiconductor material and the second type semiconductor material sequentially stacked
Layer, and the first type semiconductor material layer and second type semiconductor material layer one of them be p-type semiconductor material, another is
N-type semiconductor.However, the invention is not limited thereto, in other embodiments, the material of photosensitive layer 400 can also be sequentially heap
Folded one first type semiconductor material layer and a second type semiconductor material layer, and the first type semiconductor material layer and second type
Semiconductor material layer polarity is different or the first type semiconductor material layer and layer of intrinsic semiconductor material or other are suitable
Material.
D referring to figure 4. then forms insulating layer 410.Insulating layer 410 covers reflecting layer 390, active member T, luminous two
Pole pipe 350 and partial insulative layer 370.Insulating layer 410 has opening 412.Opening 412 at least exposes photosensitive layer 400.At this
In embodiment, opening 412 can also expose the inner edge 380a of light-blocking structure 380, but invention is not limited thereto.Insulating layer 410
Material can for inorganic material (such as: silica, silicon nitride, silicon oxynitride or above-mentioned at least two kinds materials stack layer), have
Machine material or said combination.
E referring to figure 4. then forms the second photosensitive electrode 420, to cover photosensitive layer 400.Second photosensitive electrode 420 is
Euphotic electrode.In the present embodiment, indium tin oxide, indium-zinc oxide, aluminium tin oxygen can be selected in the material of the second photosensitive electrode 420
Compound, aluminium zinc oxide, indium germanium zinc oxide, graphene, nano silver, nano carbon tube/bar or other suitable oxides,
Or the stack layer of above-mentioned at least the two, but invention is not limited thereto.First photosensitive electrode 364, photosensitive layer 400 and the second sense
Optoelectronic pole 420 constitutes photosensitive unit PD.Second photosensitive electrode 420 is relative to the first photosensitive electrode 364.Photosensitive layer 400 is located in
Between first photosensitive electrode 364 and the second photosensitive electrode 420.First photosensitive electrode 364 is located at photosensitive layer 400 and first substrate
Between 310.In the present embodiment, the second photosensitive electrode 420 may span across 380 wherein at least one of light-blocking structure.In other words, part
Second photosensitive electrode 420 can be located at except opening 382, but invention is not limited thereto.In the present embodiment, light-shielding pattern 322
It can be between first substrate 310 and photosensitive unit PD, to cover photosensitive layer 400.Light-shielding pattern 322 can be same with grid G
Step is formed, above the surface 310a of first substrate 310.Light emitting diode 350 can be by the contact of the first insulating layer 330
Hole 332 is contacted with light-shielding pattern 322.Furthermore, it is understood that light emitting diode 350 is electrically connected to light-shielding pattern 322, and shading figure
Case 322 can be used as the driver circuit of light emitting diode 350, but invention is not limited thereto.
F referring to figure 4. then forms protective layer 430, with all components of 430 lower section of protective mulch, such as: actively
Element T, photosensitive unit PD etc..In this, the light sensing apparatus 2000 of the present embodiment is just completed.In the present embodiment, protective layer
430 material can for inorganic material (such as: the stacking of silica, silicon nitride, silicon oxynitride or above-mentioned at least two kinds materials
Layer), organic material or said combination.
Shown in Fig. 4 F, light emitting diode 350 is configured on first substrate 310 and is located at by photosensitive unit PD.Light-blocking structure
380 are positioned essentially at same plane with photosensitive unit PD and light emitting diode 350, and light-blocking structure 380 is located at least in photosensitive list
The two sides of first PD.Furthermore, photosensitive layer 400 has the contact surface 400a contacted with the second photosensitive electrode 420.Luminous two
Pole pipe 350 has the top surface 350a far from first substrate 110.In the present embodiment, the top surface 380d and first of light-blocking structure 380
The distance h1 of substrate 310 is greater than contact surface 400a and 310 distance h2 of the first substrate and top surface 350a of light emitting diode 350
With 310 distance h3 of first substrate.In short, light-blocking structure 380 is higher than light emitting diode 350 and photosensitive layer 400.
Since light emitting diode 350 and photosensitive unit PD are located on same first substrate 310, that is to say, that luminous two
It is built in pole pipe 350 in photo sensing panel belonging to photosensitive unit PD, therefore, light sensing apparatus 2000 can save is hung on light sensation outside
The backlight module except panel is surveyed, so that the thickness of light sensing apparatus 2000 can be thinned.In addition, by light-blocking structure 380
Design, the light beam L that light emitting diode 350 is issued can be stopped by light-blocking structure 380, and be not easy to be strayed into the sense of photosensitive unit PD
In photosphere 400.Whereby, it can improve and be hung on signal interference problem caused by the backlight module except photo sensing panel outside.This
It outside,, can also be by light beam L in addition to that can reduce other than improperly light beam L enters the probability of photosensitive layer 400 through the setting in reflecting layer 390
It reflexes to outside light sensing apparatus 2000, to improve the utilization efficiency of light beam L.
Fig. 5 is the diagrammatic cross-section of the light sensing apparatus of one embodiment of the invention.Referring to figure 5., light sensing apparatus 3000
Including first substrate 510, active member T1, the first insulating layer 520, reflecting electrode 530, light emitting diode 540, second insulating layer
550 and photosensitive unit PD.First substrate 510 has loading end 510a.First substrate 510 can be light transmission first substrate or impermeable
Light/reflective first substrate.For example, the material of light transmission first substrate can be glass, quartz, plastic cement or other suitable materials,
The material of opaque/reflective first substrate can be wafer, ceramics or other suitable materials, but invention is not limited thereto.
Active member T1 is configured on the loading end 510a of first substrate 510.Active member T1 includes thin film transistor (TFT).It is thin
Film transistor includes grid G 1, the channel layer CH1 Chong Die with grid G 1 and the source being electrically connected respectively with the two sides channel layer CH1
Pole S1 and drain D 1.Gate insulation layer GI is accompanied between grid G 1 and channel layer CH1.In the present embodiment, channel layer CH1 can be located at
1 top of grid G.In other words, active member T1 can be bottom grid film transistor (bottom gate TFT).However, this
Invent without being limited thereto, in other embodiments, active member T1 can be top gate-type thin film transistor (top gate TFT)
Or other appropriate elements.The light sensing apparatus 3000 of the present embodiment can further comprise active member T2.Active member T1 and master
Dynamic element T2 can be generally aligned in the same plane (such as: on loading end 510a), but invention is not limited thereto.Active member T2 includes thin
Film transistor.Thin film transistor (TFT) include grid G 2, the channel layer CH2 Chong Die with grid G 2 and respectively with the two sides channel layer CH2
The source S 2 and drain D 2 of electric connection.Gate insulation layer GI is accompanied between grid G 2 and channel layer CH2.In the present embodiment, lead to
Channel layer CH2 can be located at 2 top of grid G.In other words, active member T2 can be bottom grid film transistor.However, of the invention
Without being limited thereto, in other embodiments, active member T2 can be top gate-type thin film transistor or other appropriate elements.
First insulating layer 520 covers active member T1 and has the first opening 522.First insulating layer 520, which has, to be defined
The side wall 524 of first opening 522.In the present embodiment, the first opening 522 of the first insulating layer 520 can expose active member
One of source S 1 and drain D 1 of T1 (such as: drain D 1).First insulating layer 520 can also have outside the first opening 522
Another second opening 526.Second opening 526 can expose active member T2 source S 2 and drain D 2 one of them (such as: leakage
Pole D2).The material of first insulating layer 520 can for inorganic material (such as: silica, silicon nitride, silicon oxynitride or it is above-mentioned at least
The stack layer of two kinds of materials), organic material or said combination.
Reflecting electrode 530 is located in the first opening 522, and at least covers the side wall 524 of the first insulating layer 520.In this reality
It applies in example, reflecting electrode 530 can fully cover side wall 524.Furthermore, reflecting electrode 530 is also covered and is opened by first
One of source Ss 1 and drain D 1 that mouth 522 exposes (such as: drain D 1).In other words, in the present embodiment, reflecting electrode
530 can cup-shaped object, and the first opening 522 of fully covering the component exposed with the first opening 522 of side wall 524 (such as: portion
The drain D 1 divided).The internal diameter d of the cup can be with cumulative far from first substrate 510.However, the invention is not limited thereto,
In other embodiments, reflecting electrode 530 can also cover side wall 524 without covering the component exposed by the first opening 522.?
In the present embodiment, the material of reflecting electrode 530 can for metal, alloy, the nitride of metal material, metal material oxide,
The stack layer of the other suitable materials of the nitrogen oxides of metal material or above-mentioned at least two kinds materials, but the present invention is not
As limit.
The light sensing apparatus 3000 of the present embodiment further includes conductive pattern 532.Conductive pattern 532 can be with reflecting electrode 530
Positioned at same film layer.Conductive pattern 532 is configured on the first insulating layer 520, i.e., conductive pattern 532 can be configured at active member T1
On the first insulating layer 520 above T2.Conductive pattern 532 insert the first insulating layer 520 second opening 526 and and active element
One of source S 2 and drain D 2 of part T2 are electrically connected, wherein and conductive pattern 532 is mutually separated with reflecting electrode 530 and comes, so that
Obtaining the active member T1 and T2 that conductive pattern 532 is separately connected with reflecting electrode 530 can distinctly operate, without mutually dry
It disturbs.It has to further include conductive pattern 532 it should be noted that the present invention is not intended to limit light sensing apparatus, in other embodiments,
It can also be not provided with conductive pattern 532, will be illustrated in subsequent embodiment below.
Light emitting diode 540 is configured in the first opening 522.Reflecting electrode 530 is around light emitting diode 540.In this reality
It applies in example, light emitting diode 540 can be located on reflecting electrode 530, and can pass through reflecting electrode 530 and the first active member T1
One of source S 1 and drain D 1 are electrically connected.However, the invention is not limited thereto, in other embodiments, reflecting electrode 530 can also
One of source S 1 and drain D 1 for exposing, i.e., reflecting electrode 530 is not connect with source S 1 and drain D 1, and luminous two
Pole pipe 540 can be directly on one of source S 1 and drain D 1 and above be electrically connected with active member T1.
Reflecting electrode 530 has a point 530a farthest from first substrate 510 on the direction parallel with vertical direction y.
Vertical direction y is parallel to the normal direction of loading end 510a.Point 530a is H1 at a distance from first substrate 510.Light emitting diode
540 have a point 540a farthest from first substrate 510 on the direction parallel with direction y.Point 540a and first substrate 510
Distance is H2.In the present embodiment, H1 >=H2.In other words, the height of reflecting electrode 530 can be equal to or be greater than light emitting diode
540 height, but invention is not limited thereto.On the other hand, light emitting diode 540 is in the level side vertical with vertical direction y
There is maximum width W on x, and H1, H2, W can meet following formula: 0≤(H1-H2)≤(2/3W).When H1, H2, W meet following formula: 0
When≤(H1-H2)≤(2/3W), the visual angle of light sensing apparatus 3000 and sensing function can optimize simultaneously.
Second insulating layer 550 covers light emitting diode 540 and reflecting electrode 530.In the present embodiment, second insulating layer
550 also cover conductive pattern 532.Second insulating layer 550 has third opening 552.Third opening 552 exposes partially electronically conductive figure
Case 532.The material of second insulating layer 550 can for inorganic material (such as: silica, silicon nitride, silicon oxynitride or it is above-mentioned at least
The stack layer of two kinds of materials), organic material or said combination.
Photosensitive unit PD is configured in second insulating layer 550.Photosensitive unit PD include the first photosensitive electrode 560, relative to
Second photosensitive electrode 570 of the first photosensitive electrode 560 and be located in the first photosensitive electrode 560 and the second photosensitive electrode 570 it
Between photosensitive layer 580.The opening 592a of insulating layer 592 exposes the first photosensitive electrode of part 560, and photosensitive layer 580 can be located at
In the opening 592a of insulating layer 592.First photosensitive electrode 560 is inserted the third opening 552 of second insulating layer 550 and is led with penetrating
Electrical pattern 532 and active member T2 are electrically connected.First photosensitive electrode 560 is compared with the second photosensitive electrode 570 close to first substrate 510
It and is opaque/reflective electrode, and its material sees description above-mentioned.First photosensitive electrode 560 is configured at second insulating layer
On 550 and in not Chong Die with light emitting diode 540 on vertical direction y.In other words, the first opaque/reflective photosensitive electrode 560
It is staggered with light emitting diode 540.Second photosensitive electrode 570 is euphotic electrode.In addition, in the present embodiment, light sensing apparatus
3000 can further comprise protective layer 590.All components of the covering of protective layer 590 below, such as: photosensitive unit PD etc..It protects
The material of sheath 590 can for inorganic material (such as: silica, silicon nitride, silicon oxynitride or above-mentioned at least two kinds materials heap
Lamination), organic material or said combination.
As being built in photo sensing panel belonging to photosensitive unit PD in light emitting diode 540, light sensing apparatus
3000 can save the backlight module being hung on except photo sensing panel outside, so that the thickness of light sensing apparatus 3000 can substantially subtract
It is thin.In addition, the design through reflecting layer 530 around light emitting diode 540, reflecting layer 530 can send out light emitting diode 540
Toward positive apparent direction, (i.e. vertical direction y) is concentrated light beam L out.Whereby, when 3000 detection object F of light sensing apparatus (such as: use
Person's finger) when, the light beam L reflected by object F can be entered in corresponding photosensitive unit PD with lesser angle of reflection.In this way,
The object F image sharpness that light sensing apparatus 3000 detects just is able to ascend, to obtain clearly object F image.
Fig. 6 is the diagrammatic cross-section of the light sensing apparatus of another embodiment of the present invention.The light sensing apparatus 3000A of Fig. 6 with
The light sensing apparatus 3000 of Fig. 5 is similar therefore identical or corresponding element is indicated with identical or corresponding table label.Light sensation
Survey device 3000A and the main difference of light sensing apparatus 3000 is: the photosensitive unit PD of light sensing apparatus 3000A is disposed on
On another substrate, the photosensitive unit PD rather than light sensing apparatus 3000 is directly configured on the first insulating layer 520.It is main below
With regard to this Discrepancy Description, the two mutually exists together referring again to preceding description, just no longer repeats in this.
Light sensing apparatus 3000A include first substrate 510, active member T1, the first insulating layer 520, reflecting electrode 530,
Light emitting diode 540, second insulating layer (as the second substrate) 550A and photosensitive unit PD.First substrate 510 has carrying
Face 510a.Active member T1 is configured on the loading end 510a of first substrate 510.First insulating layer 520 covers active member T1
And there is the first opening 522.First insulating layer 520 has the side wall 524 for defining the first opening 522.Reflecting electrode 530 is located at
First is open in 522 and at least covers side wall 524.Light emitting diode 540 is configured in the first opening 522.530 ring of reflecting electrode
Around light emitting diode 540.Second insulating layer (as the second substrate) 550A covers light emitting diode 540, active member T1 and the
One insulating layer 520.Photosensitive unit PD is configured in second insulating layer 550A (as the second substrate).Photosensitive unit PD includes first
Photosensitive electrode 560.First photosensitive electrode 560 be configured at second insulating layer (as the second substrate) 550A it is upper and not with light-emitting diodes
Pipe 540 is overlapped on vertical direction y, and wherein vertical direction y is parallel to the normal direction of loading end 510a.With light sensing apparatus
Unlike 3000, second insulating layer (as the second substrate) 550A is another substrate without directly connecing with light emitting diode 540
Touching.Active member T2 and photosensitive unit PD be configured on another substrate (i.e. second insulating layer (the second substrate) 550A) and with it is photosensitive
Unit PD is electrically connected.In other words, active member T2 and photosensitive unit PD are located at second insulating layer (as the second substrate) 550A
Inner surface on, and active member T1 and light emitting diode 540 are located at the appearance of second insulating layer (as the second substrate) 550A
Between face and the loading end 510a of first substrate 510.Light emitting diode 540 is staggered with active member T2 and photosensitive unit PD.Light
Sensing device 3000A has the efficacy and advantages of similar with light sensing apparatus 3000, just no longer repeats in this.
In conclusion being built in belonging to photosensitive unit in light emitting diode in the light sensing apparatus of one embodiment of the invention
Photo sensing panel in, therefore, light sensing apparatus may not include the backlight module outside photo sensing panel, thus light sensing fill
The thickness set can substantially be thinned.Further, since light emitting diode is set between the first and second reflecting layer and photosensitive unit is arranged
Above the second reflecting layer, therefore the light beam that light emitting diode is issued is understood by after the reflection of the first and second reflecting layer from photosensitive unit
Side is pierced by light sensing apparatus, and is not easy to be strayed into the photosensitive layer of photosensitive unit.Whereby, photo sensing panel is hung on outside can improving
Except backlight module caused by signal interference problem.
In the light sensing apparatus of another embodiment of the present invention, in addition to because being built in belonging to photosensitive unit in light emitting diode
Except so that the thickness of light sensing apparatus is substantially thinned in photo sensing panel, by being at least configured at light emitting diode two sides
Light-blocking structure, the light beam that light emitting diode issues can stop by light-blocking structure, and be not easy to be strayed into the photosensitive layer of photosensitive unit
In.Whereby, it can improve and be hung on signal interference problem caused by the backlight module except photo sensing panel outside.
In the light sensing apparatus of yet another embodiment of the invention, in addition to because being built in belonging to photosensitive unit in light emitting diode
Except so that the thickness of light sensing apparatus is substantially thinned in photo sensing panel, by the reflection for being looped around light emitting diode
Layer can concentrate the light beam that light emitting diode issues toward positive apparent direction.Whereby, when light sensing apparatus detection object, by object
The light beam of body reflection can be entered in corresponding photosensitive unit with lesser angle of reflection.In this way, what light sensing apparatus detected
Object image sharpness is just able to ascend, to obtain clearly object image.
Certainly, the present invention can also have other various embodiments, without deviating from the spirit and substance of the present invention, ripe
It knows those skilled in the art and makes various corresponding changes and modifications, but these corresponding changes and change in accordance with the present invention
Shape all should fall within the scope of protection of the appended claims of the present invention.
Claims (7)
1. a kind of light sensing apparatus characterized by comprising
One first substrate；
One active member is configured on the first substrate；
One photosensitive unit is configured on the first substrate and is electrically connected with the active member, which includes:
One first photosensitive electrode, is configured on the first substrate；
One photosensitive layer is configured on first photosensitive electrode；And
One second photosensitive electrode, is configured on the photosensitive layer；
One light emitting diode is configured on the first substrate and is located at by the photosensitive unit；
One light-blocking structure, positioned at the two sides of photosensitive unit, wherein the light-blocking structure, photosensitive unit and light emitting diode three connect
Line direction is arranged along a horizontal direction；And
One light-shielding pattern, between the first substrate and the photosensitive unit, to cover the photosensitive layer of the photosensitive unit, wherein
The light emitting diode is electrically connected to the light-shielding pattern.
2. light sensing apparatus as described in claim 1, which is characterized in that the light-blocking structure is around the photosensitive unit.
3. light sensing apparatus as described in claim 1, which is characterized in that the light-blocking structure has one first top surface, this is photosensitive
Layer has one second top surface, which has a third top surface, and wherein first top surface is held with the one of the first substrate
The distance of section is greater than second top surface is at a distance from the loading end and the third top surface is at a distance from the loading end.
4. light sensing apparatus as claimed in claim 3, which is characterized in that further include:
One reflecting layer covers an outer rim of the light-blocking structure and the top surface of the light-blocking structure and exposes the photosensitive layer.
5. light sensing apparatus as described in claim 1, which is characterized in that second photosensitive electrode of the photosensitive unit is crossed over should
Light-blocking structure.
6. light sensing apparatus as described in claim 1, which is characterized in that further include:
One first insulating layer covers the light-shielding pattern, and has a contact hole；And
One line pattern is set on the light emitting diode and is electrically connected with the light emitting diode, and line pattern filling should
It contacts hole and is electrically connected with the light-shielding pattern, wherein the active member includes a grid, which is set to the first substrate
Above and with the light-shielding pattern it is located at same film layer.
7. light sensing apparatus as claimed in claim 6, which is characterized in that the light emitting diode includes a first electrode and one
Second electrode, and the two line direction is arranged along a horizontal direction.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW105100748 | 2016-01-12 | ||
| TW105100748A TWI607576B (en) | 2016-01-12 | 2016-01-12 | Optical sensor |
| CN201610124463.8A CN105552159B (en) | 2016-01-12 | 2016-03-04 | light sensing device |
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| CN201610124463.8A Division CN105552159B (en) | 2016-01-12 | 2016-03-04 | light sensing device |
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| CN106229331B (en) * | 2016-08-31 | 2019-03-29 | 上海箩箕技术有限公司 | Self-luminous display pixel |
| CN106298856B (en) | 2016-08-31 | 2019-03-29 | 上海箩箕技术有限公司 | Self-luminous display pixel |
| CN107958178B (en) * | 2017-04-22 | 2022-03-15 | 柳州梓博科技有限公司 | Photoelectric sensing module, preparation method thereof and electronic device |
| TWI655788B (en) * | 2017-10-30 | 2019-04-01 | 友達光電股份有限公司 | Sensing unit and manufacturing method thereof |
| US10818800B2 (en) * | 2017-12-22 | 2020-10-27 | Nanya Technology Corporation | Semiconductor structure and method for preparing the same |
| CN109283510B (en) * | 2018-08-17 | 2021-08-31 | 南京矽力微电子技术有限公司 | Light sensing device and electronic equipment |
| TWI696296B (en) * | 2019-02-21 | 2020-06-11 | 友達光電股份有限公司 | Photosensor |
| CN112713155A (en) * | 2019-10-25 | 2021-04-27 | 群创光电股份有限公司 | Electronic device |
| FR3102886A1 (en) | 2019-10-30 | 2021-05-07 | Stmicroelectronics (Grenoble 2) Sas | Optoelectronic device |
| FR3102863B1 (en) * | 2019-10-31 | 2021-11-12 | St Microelectronics Grenoble 2 | Optoelectronic device |
| CN112464710B (en) * | 2019-11-05 | 2023-06-06 | 友达光电股份有限公司 | Sensing element substrate |
| US11658257B2 (en) * | 2020-03-27 | 2023-05-23 | Harvatek Corporation | Light source assembly, optical sensor assembly, and method of manufacturing a cell of the same |
| CN113591694B (en) * | 2020-08-27 | 2023-11-07 | 友达光电股份有限公司 | Sensing element substrate and display device comprising same |
| CN112712067A (en) * | 2021-01-22 | 2021-04-27 | 敦泰电子（深圳）有限公司 | Optical sensor, optical fingerprint module and electronic equipment |
| TWI777742B (en) * | 2021-05-18 | 2022-09-11 | 友達光電股份有限公司 | Fingerprint recognition device |
| TWI769082B (en) * | 2021-09-22 | 2022-06-21 | 友達光電股份有限公司 | Light emitting apparatus and manufacturing method thereof |
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| Publication number | Publication date |
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| CN107104098A (en) | 2017-08-29 |
| CN105552159A (en) | 2016-05-04 |
| CN105552159B (en) | 2017-09-22 |
| TWI607576B (en) | 2017-12-01 |
| TW201725747A (en) | 2017-07-16 |
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