CN107093648A - 一种应用于太阳能电池的扩散退火和干法刻蚀方法 - Google Patents
一种应用于太阳能电池的扩散退火和干法刻蚀方法 Download PDFInfo
- Publication number
- CN107093648A CN107093648A CN201710177715.8A CN201710177715A CN107093648A CN 107093648 A CN107093648 A CN 107093648A CN 201710177715 A CN201710177715 A CN 201710177715A CN 107093648 A CN107093648 A CN 107093648A
- Authority
- CN
- China
- Prior art keywords
- dry etching
- solar cell
- etching method
- method applied
- silicon chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 49
- 238000000137 annealing Methods 0.000 title claims abstract description 33
- 238000009792 diffusion process Methods 0.000 title claims abstract description 26
- 238000001312 dry etching Methods 0.000 title claims abstract description 26
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 43
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 43
- 239000010703 silicon Substances 0.000 claims abstract description 43
- 238000010792 warming Methods 0.000 claims abstract description 16
- 238000004140 cleaning Methods 0.000 claims abstract description 12
- 235000008216 herbs Nutrition 0.000 claims abstract description 7
- 210000002268 wool Anatomy 0.000 claims abstract description 6
- 238000000151 deposition Methods 0.000 claims description 18
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 16
- 230000008021 deposition Effects 0.000 claims description 13
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 10
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 10
- 229910052760 oxygen Inorganic materials 0.000 claims description 10
- 239000001301 oxygen Substances 0.000 claims description 10
- 238000001816 cooling Methods 0.000 claims description 9
- 230000003647 oxidation Effects 0.000 claims description 8
- 238000007254 oxidation reaction Methods 0.000 claims description 8
- 238000005247 gettering Methods 0.000 claims description 5
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- 238000005137 deposition process Methods 0.000 claims description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 3
- 229920005591 polysilicon Polymers 0.000 claims description 3
- 230000008569 process Effects 0.000 abstract description 16
- 238000006243 chemical reaction Methods 0.000 abstract description 6
- 230000008901 benefit Effects 0.000 abstract description 3
- 238000005516 engineering process Methods 0.000 description 8
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- RAHZWNYVWXNFOC-UHFFFAOYSA-N Sulphur dioxide Chemical compound O=S=O RAHZWNYVWXNFOC-UHFFFAOYSA-N 0.000 description 2
- 229910002092 carbon dioxide Inorganic materials 0.000 description 2
- 239000001569 carbon dioxide Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000011712 cell development Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003245 coal Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- TXKMVPPZCYKFAC-UHFFFAOYSA-N disulfur monoxide Inorganic materials O=S=S TXKMVPPZCYKFAC-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 125000004437 phosphorous atom Chemical group 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- XTQHKBHJIVJGKJ-UHFFFAOYSA-N sulfur monoxide Chemical compound S=O XTQHKBHJIVJGKJ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Plasma & Fusion (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
Claims (9)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710177715.8A CN107093648B (zh) | 2017-03-22 | 2017-03-22 | 一种应用于太阳能电池的扩散退火和干法刻蚀方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710177715.8A CN107093648B (zh) | 2017-03-22 | 2017-03-22 | 一种应用于太阳能电池的扩散退火和干法刻蚀方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN107093648A true CN107093648A (zh) | 2017-08-25 |
CN107093648B CN107093648B (zh) | 2018-10-19 |
Family
ID=59648990
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201710177715.8A Active CN107093648B (zh) | 2017-03-22 | 2017-03-22 | 一种应用于太阳能电池的扩散退火和干法刻蚀方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN107093648B (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109427921A (zh) * | 2017-09-04 | 2019-03-05 | 通威太阳能(成都)有限公司 | 一种常规多晶二次印刷太阳能电池片的制备方法 |
CN109427929A (zh) * | 2017-09-04 | 2019-03-05 | 通威太阳能(成都)有限公司 | 一种perc微小图形印刷单晶太阳能电池片的制备方法 |
CN109427928A (zh) * | 2017-09-04 | 2019-03-05 | 通威太阳能(成都)有限公司 | 太阳能电池片无氧退火工艺 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2011156560A1 (en) * | 2010-06-11 | 2011-12-15 | Amtech Systems, Inc. | Solar cell silicon wafer process |
CN102315310A (zh) * | 2010-06-30 | 2012-01-11 | 比亚迪股份有限公司 | 一种太阳能电池片制备中的扩散工艺 |
CN102629643A (zh) * | 2012-04-16 | 2012-08-08 | 中利腾晖光伏科技有限公司 | 高方阻太阳能电池制作方法 |
CN102810598A (zh) * | 2012-07-31 | 2012-12-05 | 江苏顺风光电科技有限公司 | 太阳能电池扩散退火工艺 |
CN104157736A (zh) * | 2014-08-15 | 2014-11-19 | 内蒙古日月太阳能科技有限责任公司 | 太阳能电池制备方法及太阳能电池 |
CN105470345A (zh) * | 2015-09-28 | 2016-04-06 | 阳光大地(福建)新能源有限公司 | 一种超薄多晶硅太阳能电池片的制备方法 |
CN106340567A (zh) * | 2016-08-31 | 2017-01-18 | 横店集团东磁股份有限公司 | 一种应用于太阳能电池提升开压的两步通源工艺 |
-
2017
- 2017-03-22 CN CN201710177715.8A patent/CN107093648B/zh active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2011156560A1 (en) * | 2010-06-11 | 2011-12-15 | Amtech Systems, Inc. | Solar cell silicon wafer process |
CN102315310A (zh) * | 2010-06-30 | 2012-01-11 | 比亚迪股份有限公司 | 一种太阳能电池片制备中的扩散工艺 |
CN102629643A (zh) * | 2012-04-16 | 2012-08-08 | 中利腾晖光伏科技有限公司 | 高方阻太阳能电池制作方法 |
CN102810598A (zh) * | 2012-07-31 | 2012-12-05 | 江苏顺风光电科技有限公司 | 太阳能电池扩散退火工艺 |
CN104157736A (zh) * | 2014-08-15 | 2014-11-19 | 内蒙古日月太阳能科技有限责任公司 | 太阳能电池制备方法及太阳能电池 |
CN105470345A (zh) * | 2015-09-28 | 2016-04-06 | 阳光大地(福建)新能源有限公司 | 一种超薄多晶硅太阳能电池片的制备方法 |
CN106340567A (zh) * | 2016-08-31 | 2017-01-18 | 横店集团东磁股份有限公司 | 一种应用于太阳能电池提升开压的两步通源工艺 |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109427921A (zh) * | 2017-09-04 | 2019-03-05 | 通威太阳能(成都)有限公司 | 一种常规多晶二次印刷太阳能电池片的制备方法 |
CN109427929A (zh) * | 2017-09-04 | 2019-03-05 | 通威太阳能(成都)有限公司 | 一种perc微小图形印刷单晶太阳能电池片的制备方法 |
CN109427928A (zh) * | 2017-09-04 | 2019-03-05 | 通威太阳能(成都)有限公司 | 太阳能电池片无氧退火工艺 |
CN109427929B (zh) * | 2017-09-04 | 2020-09-11 | 通威太阳能(成都)有限公司 | 一种perc微小图形印刷单晶太阳能电池片的制备方法 |
CN109427928B (zh) * | 2017-09-04 | 2021-06-01 | 通威太阳能(成都)有限公司 | 太阳能电池片无氧退火工艺 |
Also Published As
Publication number | Publication date |
---|---|
CN107093648B (zh) | 2018-10-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN102315332B (zh) | 太阳能电池片热处理工艺 | |
Xiao et al. | High-efficiency silicon solar cells—materials and devices physics | |
CN107394006B (zh) | 一种n型双面电池制备方法 | |
Gall et al. | Large-grained polycrystalline silicon on glass for thin-film solar cells | |
CN102766908B (zh) | 晶体硅太阳能电池的硼扩散方法 | |
CN109087956A (zh) | 一种双面perc太阳能电池结构及其制备工艺 | |
CN104733555A (zh) | 一种高效n型双面太阳电池及其制备方法 | |
TW200830567A (en) | Solar cell and method for manufacturing the same | |
CN103887347A (zh) | 一种双面p型晶体硅电池结构及其制备方法 | |
CN102623517A (zh) | 一种背接触型晶体硅太阳能电池及其制作方法 | |
CN107093648B (zh) | 一种应用于太阳能电池的扩散退火和干法刻蚀方法 | |
CN103474506A (zh) | 双面受光太阳电池制作方法 | |
CN103632934A (zh) | N型硅片的硼扩散方法、晶体硅太阳能电池及其制作方法 | |
CN103632933A (zh) | N型硅片的硼扩散方法、晶体硅太阳能电池及其制作方法 | |
TW201528538A (zh) | 一種低成本、適合規模化量產的背接觸電池生產方法 | |
CN106409989A (zh) | 一种n型双面太阳电池及其制备方法 | |
JP2024517203A (ja) | 選択性パッシベーションコンタクト電池およびその製造方法 | |
JP5408009B2 (ja) | 太陽電池の製造方法 | |
CN103219426A (zh) | 一种超小绒面太阳电池及其制备方法 | |
CN102709389B (zh) | 一种双面背接触太阳能电池的制备方法 | |
CN111599892B (zh) | 一种通过金刚线切割硅片制备电池片的加工工艺 | |
CN101980381B (zh) | 一种晶体硅太阳能电池双扩散工艺 | |
Das et al. | 20% efficient screen-printed cells with spin-on-dielectric-passivated boron back-surface field | |
CN204497251U (zh) | 一种高效n型双面太阳电池 | |
Kang et al. | Effects of annealing on ion-implanted Si for interdigitated back contact solar cell |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: A diffusion annealing and dry etching method for solar cells Effective date of registration: 20210804 Granted publication date: 20181019 Pledgee: Dongyang Branch of China Construction Bank Co.,Ltd. Pledgor: HENGDIAN GROUP DMEGC MAGNETICS Co.,Ltd. Registration number: Y2021330001068 |
|
PE01 | Entry into force of the registration of the contract for pledge of patent right | ||
PC01 | Cancellation of the registration of the contract for pledge of patent right |
Date of cancellation: 20230628 Granted publication date: 20181019 Pledgee: Dongyang Branch of China Construction Bank Co.,Ltd. Pledgor: HENGDIAN GROUP DMEGC MAGNETICS Co.,Ltd. Registration number: Y2021330001068 |
|
PC01 | Cancellation of the registration of the contract for pledge of patent right |