CN107078008B

CN107078008B - Use the device and method of electron beam treatment flexible base board

Info

Publication number: CN107078008B
Application number: CN201480083186.XA
Authority: CN
Inventors: 贡特尔·克莱姆; 沃尔克·哈克; 罗兰·特拉斯尔
Original assignee: Applied Materials Inc
Current assignee: Applied Materials Inc
Priority date: 2014-11-07
Filing date: 2014-11-07
Publication date: 2019-11-08
Anticipated expiration: 2034-11-07
Also published as: TWI686836B; TW201621966A; CN107078008A; WO2016070939A1

Abstract

According to disclosure case, a kind of charged particle devices for handling moveable substrate and a kind of method for handling mobile substrate in the processing system are provided.Charged particle devices include that source and beam displacement device, source are used to form charged particle beam, and to handle the substrate moved along carriage direction, beam displacement device is for making charged particle beam be moved at least the second beam trajectory along the carriage direction from the first beam trajectory.

Description

Use the device and method of electron beam treatment flexible base board

Technical field

Disclosure case is related to a kind of device and method for handling flexible base board.In particular, disclosure case is related to a kind of use Electron beam treatment flexible base board and make substrate processing more homogeneity device and method.

Background technique

Electron source is as known to multiple fields.For example, electron beam be used for material modification, surface charge accumulation, sample imaging, And similar applications.

Possess cost to reduce, it is (such as big for manufacturing for handling large-area substrates or flexible substrate (web) now Area foil, thin-film solar cells, and the like) manufacturing process have increase disposed of in its entirety rate trend.Furthermore in order to Increase the yield of manufacturing equipment, source (source) is provided in the energy density on substrate, foil, thin layer or flexible substrate certain Can also it increase in technique.

Using electron source manufacturing process during, operational circumstances can cause electric discharge (such as electric arc) and upset and/or in Power-off pressure supply.The voltage supply for upsetting and/or interrupting such as electron source during manufacturing process can cause the interruption of electron beam, This may be decreased the quality of manufactured substrate.Even if this interruption occurs only at (such as several milliseconds) in a flash, for substrate Adverse effect may be enough that substrate is caused not to be available.

Therefore, for using the improved device and method of electron source processing flexible base board still to have the demand of duration.

Summary of the invention

In view of the foregoing, according to one aspect, the charged particle devices for handling movable substrate are provided.Described device It include: source and beam displacement device.Source is used to form charged particle beam, to handle the substrate moved along carriage direction.Shu Wei Moving device is for making charged particle beam be moved at least the second beam trajectory along carriage direction by the first beam trajectory.

Further it is provided that a kind of method for handling moving substrate in the processing system.The described method includes: along transport side To moving substrate；Substrate is handled using charged particle beam；Detect the first error signal；And when detecting error signal, make Charged particle beam is displaced to the second beam trajectory along carriage direction from the first beam trajectory.

More aspects, advantage and the feature of disclosure case can be clear by subordinate claim, embodiment and attached drawing Chu.

Detailed description of the invention

Some above embodiment are described in greater detail in the description of following exemplary embodiment referring to the following drawings.

Fig. 1 to Fig. 3 is painted the schematic diagram according to embodiments herein with the charged particle devices of time-triggered protocol substrate.

Fig. 4 is schematically painted movement of the charged particle beam about moving substrate according to embodiment described herein.

Fig. 5 is schematically painted according to embodiment described herein about one or more electrical discharges and one or more inspections Survey the temporal characteristics for the charged particle beam of signal being shifted.

Fig. 6 is painted the schematic diagram of the charged particle devices according to embodiment described herein.

Fig. 7 is painted the schematic diagram of another charged particle devices according to embodiment described herein.

Fig. 8 is painted the schematic diagram of the another charged particle devices according to embodiment.

Fig. 9 is painted the schematic diagram of the another charged particle devices according to embodiment.

Figure 10 is painted the perspective view of the charged particle devices of Fig. 6 according to embodiment described herein.

Figure 11 is painted the schematic diagram of the system for controlling electron source according to embodiment described herein.

Figure 12 is painted the schematic diagram of the charged particle source according to embodiment described herein.

Figure 13 is painted the schematic diagram of the charged particle source according to another embodiment described herein.

Figure 14 is painted the another schematic diagram of the charged particle source shown in FIG. 1 according to embodiment described herein.

Figure 15 is schematically painted the method for handling moving substrate according to embodiment described herein.

Specific embodiment

Component symbol will be used in detail for different embodiments now, one or more example is illustrated in each In attached drawing.Following as described in attached drawing in description, identical component symbol indicates identical element.In general, only for a The difference of other embodiment is described.Each example is provided as explaining and be used, and is not intended to limit.For example, as one Depicted in the part of a embodiment or the feature of description can be used for other embodiments or be incorporated into other embodiments, to produce Raw another embodiment.Disclosure case is intended to include such modifications and variations.

The method that embodiment as described herein is related to electron source, especially linear electron source and operates electron source, can make For a variety of applications.According to embodiments described herein, charged particle beam caused by electron source can be shifted, to improve now The manufacturing method of substrate (including film, thin layer, foil, flexible substrate and the like).Charged particle devices as described herein and method It is not limited to the use of flexible base board, and can equally be used in the processing of rigid substrates.Term as used herein " substrate " It should indicate both non-flexible substrate (such as chip or glass plate) and flexible base board (such as flexible substrate and foil).Herein alternately Use term " charged particle beam " and " beam ".

According to embodiments described herein, charged particle devices are provided for the processing of substrate, especially for moving The processing of substrate.Charged particle devices may include charged particle source, and charged particle source is used to form charged particle beam, with to along The mobile substrate of carriage direction is handled.For example, charged particle source can form linear charged particle (such as electronics) beam.Root According to embodiments described herein, charged particle devices can be used for polymerization reaction, such as form polymer film on flexible substrates.

According to embodiments described herein, charged particle devices are also suitable for valuably by charged particle beam by first position Carriage direction along at least substrate is displaced at least second position, and substrate can be moved along carriage direction.Charged particle beam is shifted It may include changing in the path of charged particle beam along the carriage direction of at least moving substrate from first path or the first beam trajectory To at least the second path or the second beam trajectory.It is not limited to any embodiment described herein, charged particle devices can be another It is outer to be suitable for shifting charged particle beam on the carriage direction in contrast to substrate.

According to embodiment as described herein, the method for handling substrate is provided, especially in the processing system The method for handling mobile substrate.The method improves the quality of the substrate of processing and generates the manufacture efficiency of the substrate of this processing. The method includes the substrate moved along carriage direction being handled using charged particle beam, and work as the mistake for receiving and indicating on substrate When the error signal of the mistake accidentally and/or in treatment process, shift charged particle beam along the carriage direction of substrate.

In embodiments described herein, this error signal can for example indicate that electric arc has occurred during handling substrate.One As for, using high voltage to handle substrate in charged particle devices, may cause sporadic electric arc, this may cause band Electrochondria beamlet is interrupted up to several milliseconds.The some parts that the interruption of charged particle beam can lead to substrate are not processed, special It is not when substrate is moved along carriage direction.According to the method for embodiments described herein, in order to handle by such as electric arc institute Caused by charged particle beam interruption and be not affected by the part of the substrate of processing, the carriage direction displacement band of substrate can be moved along Electrochondria beamlet.

Fig. 1 to 3 is painted the charged particle devices 100 according to embodiments described herein with time-triggered protocol substrate.Band electrochondria Sub-device 100 includes shell 112, anode of the shell 112 as electron source.The front 113 of shell 112 has opening 114, such as Slit opening.The transversal cross-section of opening can cover at least the 1/10 of substrate width.According to embodiments described herein, the transverse direction of opening Section can be described as the extension being open on substrate width direction.For example, opening can be along the size in substrate width direction At least the 1/10 of substrate width.According to embodiments described herein, the width of charged particle beam (that is, along substrate carriage direction Size) it can be 3mm in the plane of substrate to 3cm.In embodiments described herein, perpendicular to charged particle devices 100 Longitudinal direction direction measured by opening 114 can be for example from 3mm to 8mm, e.g. 4mm or 6mm.In shell 112, Cathode 110 is provided.It results from shell and the electronics accelerated towards the front of shell 112 113 can be left linearly by opening 114 Electron source.

According to different embodiments, anode can for example by such as copper, aluminium, steel, above-mentioned substance mixture, and the like Material manufacture.According to can may include with the different embodiments in conjunction with other embodiments as described herein, cathode selected from by Steel, stainless steel, copper, aluminium, graphite, CFC (carbon-fiber-reinforced carbon, carbon fiber-reinforced carbon), above-mentioned object The material of group composed by the synthetic of matter or the mixture of above-mentioned substance.

According to can embodiment as described herein in conjunction with the other embodiments of charged particle devices, charged particle dress It sets and is mountable among vacuum chamber and (is not shown in attached drawing).The perimeter of shell 112 and especially in electron source Region between opening 114 and the target of electronic impact can be evacuated to such as 10^-1To 10^-9The pressure of mbar.Charged particle dress Set 100 gas sources (not being illustrated in figure) that may connect to that there is gas conduit.Gas stream can be regulated and controled, so that the pressure in shell Pressure of the power corresponding to 10-3mbar or more, typically 10^-2The pressure of mbar or more.According to different implementation as described herein Mode can be group's (such as argon at least from inert gas for example, by the gas in air conduit injection shell 112 (argon)、N₂、O₂And the mixture of above-mentioned gas) gas.

According to can pass through with the embodiment as described herein in conjunction with other embodiments as described herein, cathode 110 Electric conduit or conductor (that is, electrical fitting 120) are connected to variable power supply.Electric conductor may pass through the cathode support of insulation Component 122.According to another embodiment, the cathode support component 122 of insulation can also be provided in a manner of air seal, so may be used Maintain the pressure difference between the inside of shell 112 and the outside of shell 112.Shell 112 can be grounded and as anode.Cathode 110 Voltage between anode can cause the generation of plasma.Generated charged particle (such as electronics) can court in plasma Accelerate to anode.The electronics accelerated towards front 113 can be used as electron beam and leave charged particle devices 100 by opening 114.

According to embodiments described herein, other than the cathode support component of one or more insulation, cathode can pass through one The cathode support element 124 of a or multiple electric insulations is connected to the rear wall of the shell of charged particle devices, such as 2,3,4 The cathode support element of a or more electric insulation (for example, see Figure 11).It is one or more according to embodiments described herein The cathode support element of electric insulation can support cathode, and ensure in the direction for the length direction for being parallel to charged particle devices In, spacing having the same between cathode and the rear wall of shell.So ensure to provide between cathode and the rear wall of shell predetermined Dark space (predetermined dark region).In embodiments described herein, one or more electric insulation cathode support members Part can be guided for example by the hole for passing through the rear wall of shell.In order to allow the thermal expansion of cathode, exist especially for permission cathode The linear thermal expansion being parallel in the direction of the length direction of charged particle devices, the cathode support member of one or more electric insulations Part can be configured to moveable (e.g. spring loads).

In addition, charged particle devices, which may be adapted to increase from charged particle source, extracts band electrochondria according to embodiments described herein The efficiency of son, charged particle are projected with charged particle beam to substrate.Increasing extraction efficiency may include minimizing Secondary Emission (secondary emission), and increase from charged particle devices to the energy transmission efficiency of substrate to be processed.For example, closing Depicted in Figure 12 to 14 and the charged particle devices of description also may be provided in the embodiment described in Fig. 1 to 11.This Increased extraction efficiency can be beneficial to position (positioning) beam displacement device (beam displacement device).

According to some embodiments, the power supply for providing voltage to cathode 110 is suitable for controllably providing range in example If -5kV to -30kV is (typically in the range of -5kV to the voltage of -14kV).Fig. 1 is painted the sectional view of charged particle devices.Cathode 110 can be installed among shell 112, and can separate with shell 112.In general, cathode 110 can be separated greatly with shell 112 to foot With essentially decreased or prevent the distance of electric arc, the distance can for example 2 to 12mm, typically 3 to 8mm, such as 4 to In the range of 5mm.According to embodiment as described herein, the space that separates between cathode and shell may be selected to be and be enough greatly to anti- Only electric arc, and may be selected to be enough it is small to substantially prevent between cathode and shell in the not estimated region that gas discharge occurs In (such as in addition to region before the cathode of charged particle devices 100, the region between cathode 110 and opening 114) Gas discharge.

According to the different embodiment party as described herein for the embodiment that can be applied to charged particle devices as described herein The Energy distribution of formula, the linear electron beam of transmitting can be controlled by the pressure in the current potential and shell 112 of cathode.For example, right It, can be according to being electronically generated in cathode sheath for relatively thick cathode sheath (cathode sheath) and relatively thin heating region Position generate multiple and different energy.Thin heating region can reduce a possibility that energy dissipation in heating region. However, if the thickness of heating region increases, in cathode sheath in generated electronics and heating region electronics and from A possibility that interaction of son, may will increase.Result from cathode sheath in heating region electronics and ion it is mutual The high-energy electron of effect can be by its energy dissipation to other particles, and so there may be lesser Energy distributions.According to herein The embodiment, by adjusting operating parameter, Energy distribution (FWHM) can usually less than maximum electron energy 50%, 30% or 10%.For example, can produce the value less than 1000eV, such as 100 or 10eV.Those of ordinary skill in the art will become apparent from, The value of Energy distribution width mentioned above will also have by the resulting minimum value of theoretic minimum value, and can be In 0.1 to 1eV range.

According to embodiments described herein, the shape of cathode 110 may include recess portion 111.Recess portion 111 valuably promotes preferably Generated charged particle is guided near cathode 110 towards front 113 (especially towards opening for charged particle devices 100 The starting velocity of mouth 114).According to another embodiment, second electrode or cathode may include from the first side of second electrode outwardly The direction of the antetheca of shell one or more beam shaping extensions (beam shaping extension) outstanding, to guide band electrochondria Beamlet passes through slit opening, such as shown in Figure 12,13 and 14.

It is illustrated in the substrate of the display of charged particle devices 100 of Fig. 1 to Fig. 3 according to embodiments herein with the time Processing.Embodiment shown in FIG. 1 includes charged particle devices 100, and charged particle devices 100 form the band of guiding substrate 117 Electrochondria beamlet 115.Substrate is moved along carriage direction 101.Charged particle beam 115 can be directed to substrate along first axle 102. First axle 102 can correspond to the initial position of charged particle beam, starting axis, first angle or the first beam trajectory.First axle 102 can Such as the surface perpendicular to substrate 117.

During handling the substrate 117 for moving along the movement of direction 101, short circuit can (e.g. due to electric arc) It can for example interrupt charged particle beam 115.Sustainable several milliseconds of the interruption of charged particle beam 115, and can cause on substrate 117 not Processed area 118 (hereinafter usually being indicated with " untreated area ").

In order to ensure the beneficial uniformity and continuous processing of substrate when detecting short circuit, according to embodiments herein Charged particle devices 100 may be adapted to the position or angle that change charged particle beam 115 at least along the moving direction 101 of substrate 117 Degree.

The geometry of charged particle devices shown in the drawings, sectional view shown in especially such as Fig. 1 to 3 are painted root According to the example of the charged particle devices of embodiments herein.Geometry in particular shown in attached drawing is not intended to limit in any way Determine the range of disclosure case.Other suitable different geometries of charged particle devices are in the range of disclosure case.Example Such as, shown in Figure 12 to 14 and about Figure 12 to 14 as described in charged particle devices also may be provided in embodiment as described herein In.Increased extraction efficiency can be beneficial to locating bundling gearshift.

In embodiment as described herein, charged particle devices 100 can be suitable, so that charged particle beam 115 can The second position 107 is moved to from first position 106 along the carriage direction 101 of substrate 117.Likewise, it may be said that charged particle Beam is to be moved to the second beam trajectory from the first beam trajectory along the carriage direction of substrate.This movement is usually by the arrow in Fig. 2 Represented by 103.

According to embodiments described herein, first position 106 be can be described as when charged particle beam 115 is along 102 quilt of first axle When being oriented to substrate, charged particle beam 115 is in region influence (impact) on substrate 117.The second position 107 can be described as working as band When electrochondria beamlet 115 is directed to substrate along the second axis 105, charged particle beam 115 on substrate 117 influence area (referring to Fig. 2).

In embodiment as described herein, when a short circuit is detected, charged particle beam 115 can be along the fortune of substrate 117 It send direction 101 to be displaced to the untreated area 118 on substrate 117, such as suddenly shifts (being also indicated as " jumping " herein).Electrification The particle beams 115 can generally be greater than movement speed of the substrate 117 in carriage direction 101 along the shifting speed of carriage direction 101.

According to embodiments described herein, charged particle beam 115 can be from 106 Shift Angle of first position along first axle 102 The second position 107 spending Alpha (α) and arriving along the second axis 105.In embodiments described herein, the second axis can represent second Beam trajectory.Angle alpha (α) 116 (being hereafter also known as charged particle beam angle) may be defined as the first of charged particle beam 115 Angle between axis 102 and the second axis 105.In embodiments described herein, the size of angle alpha (α) 116 can be with base Plate 117 changes along the speed that carriage direction 101 moves.In general, the maximum value of angle alpha (α) 116 can depend on In charged particle devices 100 and the physical limit of the delivery system of substrate 117.

In general, biggish charged particle beam angle (α) is compared to lesser band electrochondria according to embodiments described herein Beamlet angle (α) make charged particle beam along the moving direction 101 of substrate 117 have biggish translocation distance 150 (for example, see Fig. 2).The distance 150 that charged particle beam is shifted along the carriage direction of substrate may be generally described as along charged particle beam 115 First axle 102 be projeced into first point of position on 117 surface of substrate and the second axis 105 along charged particle beam 115 The shortest distance being projeced between the position of the second point on 117 surface of substrate.

In embodiment as described herein, for the untreated area 118 to the substrate 117 moved along carriage direction 101 It is handled, charged particle beam 115 can be by the first charged particle beam angle degree (α) 116 along the carriage direction of substrate 117 101 are moved to the second position 107 from the first position 106 of the starting of charged particle beam 115.According to embodiments described herein, when When charged particle beam 115 is moved to the second position 107 by first position 106, the intensity of charged particle beam 115 is changeable, or Person can remain unchanged.

For example, being moved to the second position 107 by first position 106 in charged particle beam 115 in embodiments described herein And/or during returning to first position 106, charged particle devices can be adapted such that the intensity of charged particle beam 115 can be adjusted. For example, in order to compensate for mobile and/or previous processing, the intensity of charged particle beam 115 can be changed and (decrease or increase).

According to embodiments described herein, charged particle beam 115 can stop in the second position 107 or suspend for the first predetermined time Section.For example, charged particle beam 115 can rest on the second position 107 until the untreated area 118 of substrate 117 is completely mobile logical Cross charged particle beam 115.Charged particle beam 115 can rest on the second position 107 at least 10 seconds, less than 5 seconds or less than 1 second.Band Electrochondria beamlet 115 can move back to first position 106 by the second position 107 within the second predetermined amount of time (referring to Fig. 3).Always Period (including first and second predetermined amount of time) can be, for example, less than 10 seconds, less than 5 seconds or several milliseconds.According to the implementation of this paper Mode, the total period for making charged particle beam be moved to the second position from first position are smaller than for making charged particle beam The total period of first position is moved to from the second position.

In embodiments described herein, the first predetermined amount of time that charged particle beam 115 rests on the second position 107 is desirable Certainly in short circuit total time, the total time that charged particle beam 115 is interrupted, substrate 117 movement speed, and/or charged particle The intensity of beam 115.

For example, extending a zonule across substrate 117 along carriage direction 101 compared to untreated area 118, if untreated area 118 extend a big region across substrate 117 along carriage direction 101, then charged particle beam 115 can remain longer in the second position 107 Period.

In embodiments described herein, charged particle devices 100 are suitably adapted for will be with electrochondria in the second predetermined amount of time Beamlet 115 moves back to first position 106 by the second position 107.Charged particle devices 100 can be along the carriage direction of substrate 117 Charged particle beam 115 is moved back to its original position with the first charged particle beam angle degree (α) 116 by 101.In Fig. 3, band electrochondria The moving direction of beamlet 115 is substantially indicated by arrow 104.In general, charged particle beam 115 can be gradually at any time by second It sets 107 and moves back to first position 106.

According to embodiment as described herein, charged particle devices 100 can be adapted so that charged particle beam 115 is by The movement speed that one position 106 is moved to the second position 107 can be greater than charged particle beam 115 and move back to the by the second position 107 The movement speed of one position 106.

Fig. 4 is schematically painted the charged particle devices 100 about mobile substrate 117 according to embodiment described herein Linear charged particle beam 115 movement different views.When a short circuit is detected, charged particle devices may be adapted to band electrochondria Beamlet 115 is moved to the untreated area 118 on substrate 117 along the carriage direction 101 of substrate 117.

According to further embodiment, in order to allow untreated area 118 to be completely exposed to linear charged particle beam 115, Charged particle beam 115 can be for example in carriage direction 101 by the mobile untreated area 118 for being just over substrate 117.Arrow 123 (is drawn It is shown in Figure 4) typically represent moving direction of the charged particle beam 115 along carriage direction 101 towards untreated area 118.Arrow 125 (being illustrated in Fig. 4) typicallys represent charged particle beam 115 and returns to moving for its origin-location along the opposite direction of carriage direction 101 Direction.Charged particle beam 115 generally moves through untreated area 118 and then never treatment region 118 moves away.When band electrochondria When beamlet 115 moves through untreated area 118, charged particle beam 115 handles untreated area 118.

Fig. 5 is schematically painted according to embodiment described herein about one or more electrical discharges and one or more detections The time response for the charged particle beam of signal being shifted.

According to embodiments described herein, for charged particle beam short interruption (for example, such as 1ms to 4ms), band electrochondria Beamlet can be shifted a calculated value and arrive in untreated area.After the predetermined time, charged particle beam can return to its original position. The intensity (such as such as electric current) of small angle excursion, deflection signal, magnetic field can be determined by following equalities [1].

J=kvbUb1/2/a equation [1]

In above equation [1], k indicates that constant, Ub indicate that acceleration voltage, vb indicate substrate speed, and a indicates charged particle The distance between source and substrate.

In the case of the first part of chart 500 indicates single electric arc, the movement of charged particle beam at any time.About chart 500 first part, the first error signal 501 indicate the electric arc that can be detected by charged particle devices as described herein.First Error signal can be associated with the first blank section (blanking interval) 511.In order to being not affected by substrate because of electric arc The region of processing is handled, supplied to the change movable charged particles beam of the deflection signal 521 of charged particle devices.With The past of time 540, the deflection signal supplied to charged particle devices can gradually return to normally.

In the case of the second part of chart 500 indicates twin arc, the movement of charged particle beam at any time.Such as distinguish table The first error signal 501 and the second error signal 502 for showing the first electric arc and the second electric arc can be by charged particles as described herein Device detection.First signal 501 can be correspondingly associated with the first blank section 511, and second signal 502 can be correspondingly associated with Second blank section 512.In order to on substrate because first electric arc due to be not affected by the first area of processing and handle, be supplied to band First variation movable charged particles beam of the intensity of the deflection signal 521 of electrochondria sub-device.With the past of time 540, supply It can should gradually be returned to normally to the intensity of the deflection signal of charged particle devices.In order to on substrate due to the second electric arc not by Second area to processing is handled, supplied to the second variation of the intensity of the deflection signal 522 of charged particle devices, selection Property the first deflection letter signal supplied to charged particle devices intensity returned to it is normal before, movable charged particles Beam.With the past of time 540, the intensity supplied to the deflection signal of charged particle devices can be returned to gradually normally.

For example, in embodiment as described herein, supplied to the of the intensity of the deflection signal 521 of charged particle devices One variation, the voltage or electric current that can be for example supplied to the beam deflection device of charged particle beam apparatus increase to first by normal value Value.With the past of time 540, voltage or electric current supplied to the beam deflection device of charged particle beam apparatus can be gradually by One value returns to normal value (that is, voltage or electric current can reduce).Supplied to the intensity of the deflection signals 522 of charged particle devices Second variation can be for example and selectively return to normally in the first value of the beam deflection device supplied to charged particle beam apparatus Before value, voltage or electric current supplied to the beam deflection device of charged particle beam apparatus increase to second value.

According to embodiments described herein, the first value of the deflection signal supplied can be identical to supplied deflection signal Second value.However, the first value and second value for the deflection signal supplied can be different in the another embodiment of this paper.One As for, in embodiments described herein, the intensity for the deflection signal supplied may depend on charged particle beam to reach base The untreated area of plate and the shift length in the carriage direction of substrate.

In general, can detect 1,2,3 or more mistake letter with the time according to embodiments described herein Number, and the different untreated areas that charged particle beam is displaced to substrate can be started along carriage direction.According to the implementation of this paper The displacement of mode, charged particle beam can occur in a continuous manner.Charged particle beam can divide each error signal detected It is not shifted and is subsequently returning to starting charged particle beam position.According to another embodiment herein, starting charged particle is being returned to Before beam position, charged particle beam can be shifted to handle different untreated areas.It is used when for example, detecting the first error signal It is used to shift electrification when shifting the absolute value of the first deflection signal of charged particle beam can be greater than and detect the second error signal The absolute value of second deflection signal of the particle beams, the absolute value of the second deflection signal, which can be greater than when detecting third error signal, to be used In displacement charged particle beam third deflection signal absolute value, and so on.

Fig. 6 to 10 is painted the different embodiments of charged particle devices as described herein.Fig. 6 is painted including about Fig. 1 to 3 The charged particle devices 200 of all components of the charged particle devices 100.Embodiment according to figure 6, band electrochondria Sub-device 200 may include beam displacement device 210.Beam displacement device may be designed as one or more air core coils.Reality shown in fig. 6 Applying mode includes at least a pair of of air core coil 211,212, and air core coil 211,212 is configured as the phase in charged particle beam 115 To relative to each other on two sides.Air core coil 211,212 may connect to variable voltage source (not being illustrated in figure).Charged particle devices It may be adapted to change the electric current for being supplied to air core coil 211,212, to generate the magnetic field that charged particle beam 115 can be made to shift.

Embodiment according to figure 6, charged particle beam 115 can project along which first by Shu Chaoxiang substrate 117 Axis 102 is inclined to the second axis 105.Valuably, the charged particle beam angle A Er between first axle 102 and the second axis 105 Method (α) 116 can change according to the current strength for being applied to air core coil 211,212.

For example, the electric current that increase is applied to air core coil 211,212 can increase generated magnetic field strength, this can increase band Charged particle beam angle degree (α) 116.In general, according to embodiments described herein, compared to lesser charged particle beam angle (α) For, biggish charged particle beam angle (α) make charged particle beam along substrate 117 101 deflection of carriage direction it is biggish away from From 150.Charged particle beam can be generally described as being located at along band electrochondria along the distance 150 of the carriage direction institute deflection of substrate The first axle 102 of beamlet 115 is projeced into first point on 117 surface of substrate and the second axis 105 throwing along charged particle beam 115 Penetrate the shortest distance between the position in the second point on 117 surface of substrate.

The electric current that reduction is applied to air core coil 211,212 can reduce the intensity in magnetic field, so as to reduce charged particle beam Angle (α) 116.According to embodiments described herein, the electric current for being applied to air core coil 211,212 is usually quicklyd increase, to allow Charged particle beam 115 along substrate 117 carriage direction 101 can favorably rapidly, great-jump-forward (jump-like) it is mobile.It applies The electric current for adding to air core coil 211,212 usually gradually decreases, to return to along first with allowing 115 relatively slower of charged particle beam The initial position of the charged particle beam 115 of projection axis 102.

Fig. 7 is painted the charged particle devices of all components including the charged particle devices 100 described in Fig. 1 to 3 201.Embodiment according to figure 7, charged particle devices 201 may include beam displacement device 220.Beam displacement device can design For one or more electrodes.Embodiment shown in Fig. 7 includes that at least a pair of electrodes 221,222, electrode 221,222 is configured as It is facing with each other in the opposite sides of charged particle beam 115.Electrode 221,222 can be connected to variable voltage source and (not be illustrated in figure In).Charged particle devices may be adapted to change the voltage for being supplied to electrode 221,222, charged particle beam 115 can be made to shift to generate Electrostatic field.Since electrostatic field more quickly can be converted (switch) compared to for magnetic field, electrostatic field can be Benefit.

Embodiment according to figure 7, charged particle beam 115 can project along which first by Shu Chaoxiang substrate 117 Axis 102 is inclined to the second axis 105.Charged particle beam angle alpha (α) 116 between first axle 102 and the second axis 105 It can change with the voltage strength for being applied to electrode 221,222.

Similar to embodiment shown in fig. 6, the voltage that increase is applied to electrode 221,222 can increase generated electrostatic Field intensity, so as to increase charged particle beam angle (α) 116.In general, according to embodiments described herein, compared to smaller Charged particle beam angle (α) for, biggish charged particle angle (α) makes charged particle beam along the transport side of substrate 117 To the biggish distance 150 of 101 deflections.Charged particle beam can generally be retouched along the distance 150 of the carriage direction institute deflection of substrate State for positioned at the first axle 102 along charged particle beam 115 be projeced into first point on 117 surface of substrate with along charged particle Second axis 105 of beam 115 is projeced into the shortest distance between the position of the second point on 117 surface of substrate.

The voltage that reduction is applied to electrode 221,222 can reduce the intensity of electrostatic field, so as to reduce charged particle beam angle Spend (α) 116.According to embodiments described herein, the voltage for being applied to electrode 221,222 is usually quicklyd increase, to allow band electrochondria Beamlet 115 can be moved to fast hop formula along the carriage direction 101 of substrate 117.The voltage for being applied to electrode 221,222 is usual It gradually decreases, to return to of the charged particle beam 115 along the first projection axis 102 with allowing 115 relatively slower of charged particle beam Beginning position.

Fig. 8 is painted the charged particle devices of all components including the charged particle devices 100 described in Fig. 1 to 3 202.Embodiment according to figure 8, charged particle devices 202 may include beam displacement device 230.Beam displacement device can design For one or more permanent magnets.Embodiment shown in Fig. 8 include at least two permanent magnets 231,232, permanent magnet 231, 232 be configured as it is facing with each other in the opposite sides of charged particle beam 115.Since permanent magnet can be be not attached to can power transformation Function is executed in the case where potential source, therefore the embodiment of Fig. 8 is particularly advantageous.Charged particle devices can so be simplified and reduced whole Body possesses cost.

Embodiment according to figure 8, charged particle beam 115 can project along which first by Shu Chaoxiang substrate 117 Axis 102 is inclined to the second axis 105.Valuably, the charged particle beam angle A Er between first axle 102 and the second axis 105 Method (α) 116 can change with the voltage strength for the cathode 110 for being applied to charged particle devices 202.

For example, the voltage that reduction is applied to cathode 110 can increase the magnetic field of permanent magnet 231,232 to charged particle beam 115 deflection effect, so as to increase charged particle beam angle (α) 116.In general, being compared according to embodiments described herein For lesser charged particle beam angle (α), biggish charged particle angle (α) makes charged particle beam along substrate 117 The biggish distance 150 of 101 deflection of carriage direction.Charged particle beam is general along the distance 150 of the carriage direction institute deflection of substrate Can be described as being located at along the first axle 102 of charged particle beam 115 be projeced into first point on 117 surface of substrate with along band Second axis 105 of electrochondria beamlet 115 is projeced into the shortest distance between the position of the second point on 117 surface of substrate.

The voltage that increase is applied to cathode 110 can reduce deflection caused by the magnetic field of permanent magnet 231,232, from And charged particle beam angle (α) 116 can be reduced.According to embodiments described herein, it is applied to the usually fast prompt drop of voltage of cathode 110 It is low, to allow charged particle beam 115 that can rapidly, great-jump-forward move along the carriage direction 101 of substrate 117.It is applied to yin The voltage of pole 110 usually gradually increases, to return to the band along the first projection axis 102 with allowing 115 relatively slower of charged particle beam The initial position of electrochondria beamlet 115.

Fig. 9 is painted the charged particle devices of all components including the charged particle devices 100 described in Fig. 1 to 3 203.Embodiment according to Fig. 9, charged particle devices 203 may include beam displacement device 240.Beam displacement device 240 can It is designed as displacement arragement construction, for source being rotated and/or being displaced to the second source position (dotted line of such as Fig. 9 from the first source position It is shown).This displacement arragement construction may include mechanical system, for source to be displaced to the second position from least first position, to change Variable speed charged particle beam angle degree (α) 116.

Embodiment according to Fig. 9, in the first position in source, charged particle beam 115 can be along 102 direction of first axle Substrate 117 projects.In the second position in source, charged particle beam 115 can be projected along the second axis 105 towards substrate 117.First Both axis 102 and the second axis 105 all can be projected to substrate 117 from 110 straight line of cathode of charged particle devices 203.According to herein Embodiment, first axle 102 and the second axis 105 can be described as the first beam trajectory and the second beam trajectory different from each other.

According to embodiments described herein, thrown along the charged particle beam 115 of the second axis 105 projection along first axle 102 The downstream of the carriage direction 101 along substrate 117 for the charged particle beam 115 penetrated.

The embodiment of charged particle devices 203 shown in Fig. 9 can be combined in any of embodiment shown in Fig. 6 to 8 Gearshift 210,220,230, to generate the embodiment of more useful charged particle devices, more useful charged particle is filled for this The embodiment set can provide along substrate carriage direction it is large range of move or distance for charged particle beam 115 shifting Position.

Figure 10 is painted the perspective view of the charged particle devices of Fig. 6 according to embodiment described herein.In general, following The size of charged particle devices 200 can be applied to any charged particle devices 201,202,203 as described herein.

Particularly, Figure 10 is painted the extension of charged particle devices 200.According to this embodiment, charged particle devices 200 can Extend in longitudinal direction 160, to cover at least the 1/10 of substrate width.Similarly, slit opening 114 can also cover substrate At least the 1/10 of width, and/or can extend across the longitudinal of charged particle devices 200 and extend.According to another embodiment, at least The size of charged particle beam can cover at least the 1/10 of substrate width.

In general, linear charged particle beam 115 and beam displacement device 210 (shows as one in this embodiment Or multiple air core coils 211,212 (also please referring to Fig. 6)) can extend in the longitudinal direction 160 of charged particle devices 200, with Cover the width of substrate.

According to this embodiment, longitudinal extension 161 of linear charged particle beam 115 is alterable.For example, charged particle beam The width for the treatment of region on 115 longitudinal substrate for extending width that 161 are suitably adapted for substrate and/or moving along carriage direction.

Figure 11 is painted the schematic diagram of the system for controlling electron source according to embodiment described herein.System 700 is wrapped Charged particle devices 202 are included, charged particle devices 202 have cathode 110 and anode, and anode is provided in charged particle by having The shell 112 of the slit opening 114 of 202 front of device provides.According to this embodiment, the system 700 for handling substrate can Including any one or more charged particle devices 200,201,202,203 (such as please referring to Fig. 6 to Fig. 9) as described herein.

High voltage can be provided to cathode 110 by electrical fitting 120.Shell can be grounded, to provide plus earth current potential. As the gas (such as mixture of argon, N2, O2, above-mentioned gas or the like) of inert gas can be by gas conduit 130 from gas Body slot 70 is provided in shell 112 by one or more valves 72 for generating plasma.In general, according to this paper institute The some embodiments stated, gas conduit, valve, gas grooves, and the like one or more elements can be used in gas source, with In supply such as the gas (such as mixture of argon, N2, O2, above-mentioned gas or the like) to charged particle devices of inert gas In shell.According to the another embodiment that can be generated and in conjunction with other embodiments, it is possible to provide at least two gas source or very To at least seven gas source.2 or more gas sources can usually share as gas grooves, from slot to the gas conduit of gas distributor, And/or the component of valve.

One or more valves 72 can be controlled by controller 90, as shown in arrow 74.According to can be with other realities as described herein Reaction of the range at 1 to 10 millisecond can be used in some embodiments as described herein that the mode of applying combines, one or more valves 72 Time control.For example, it can be achieved that valuably fast reaction in the case where electric arc occurs between cathode and anode.

In general, electric current and electron beam intensity can be controlled by the amount for the gas being provided in plasma slab.It provides Electric current to linear electron source can be proportional to electric current provided by the transmitting as electronics.For example, if electric current should be lowered, one A or multiple valves 72 can be controlled, so that the amount of gas increases in plasma slab.

High voltage for cathode 110 can be provided by power supply 80.According to some embodiments, controller 90 is measured by perseverance Constant voltage source 80 is provided to the electric current of cathode.This is as shown in the arrow 95 in Figure 11.In addition, as shown in arrow 82, voltage source is (also That is power supply 80) it may include detection device, such as sensor.According to this embodiment, detection device can be for example electric arc control.If Electric arc occurs between cathode and anode, then electric current may quickly increase, this can exclude means (arcing by the electric arc of power supply Rejection means) detection.According to can be with some embodiments in conjunction with other embodiments as described herein, voltage source May be adapted within the scope of millisecond (such as 1msec to 10msec) is closed and is opened.In general, the reaction time may depend on along The speed of the mobile substrate of electron source.Therefore, for substrate fastish for movement, the reaction time can be even very fast, If substrate, when not moving or only moving slowly at, the reaction time can be relatively slow.If electric arc occurs, power supply 80 can be stood It closes, and is further again turned on immediately after electric arc disappearance.On the one hand, this stable operation for allowing linear electron source. On the other hand, this operation can be quasi-continuity (quasi-continuous).If linear electron source is quick for target Mobile flexible base plate, foil, and the like application, then this is especially relevant.

As described above, charged particle devices as described herein may be adapted to detecting electric arc according to embodiments described herein Or when short circuit, power supply is closed and opened in millisecond range., it is surprising that result short circuit or electric arc can be not required in strategic point Disconnected charged particle beam.In general, the required and/or unwanted interruption of charged particle beam can be caused along carriage direction A region on mobile substrate is missed without being processed.

Valuably, according to embodiments described herein, when detecting short circuit and/or when interrupting charged particle beam, band electrochondria Sub-device 202 may be adapted to from first position shift charged particle beam 115 along the carriage direction 101 of at least moving substrate 117 To at least second position.It may include by the path of charged particle beam from first path or the first beam by the displacement of charged particle beam 115 At least carriage direction 101 that track moves along substrate 117 changes at least the second path or the second beam trajectory.For example, electrification The particle beams 115 can project first axle 102 along which from Shu Chaoxiang substrate 117 and be inclined to the second axis 105.Valuably, first axle 102 and the second charged particle beam angle alpha (α) 116 between axis 105 can be according to the yin for being applied to charged particle devices 202 The voltage strength of pole 110 and change.

Particularly, when a short circuit is detected, charged particle beam 115 can suddenly be moved along the carriage direction 101 of substrate 117 Untreated area on dynamic (being also referred to as " jump " herein) to substrate 117.Charged particle beam 115 is moved along carriage direction 101 Speed can generally be greater than the rate that moves in carriage direction 101 of substrate 117.

According to this embodiment, controller 90 may be adapted to for example when detect electric arc or short circuit when, dropped by variable power supply 80 The low voltage for being applied to cathode 110.This situation is as shown in the arrow 96 in Figure 11.Reduce the acceleration electricity of charged particle devices 202 Pressure can increase the magnetic field of permanent magnet 231,232 to the effect of the deflection of charged particle beam 115, so as to increase charged particle beam Angle (α) 116.In general, according to this embodiment, compared to lesser charged particle beam angle, biggish charged particle Beam angle degree (α) makes charged particle beam along the biggish distance 150 of 101 deflection of carriage direction of substrate 117.Similar to above with respect to The description of Fig. 8, charged particle beam can be generally described as being located at along electrification along the distance 150 of the carriage direction deflection of substrate The first axle 102 of the particle beams 115 is projeced into first point on 117 surface of substrate and the second axis 105 along charged particle beam 115 The shortest distance being projeced between the position of the second point on 117 surface of substrate.

In addition, controller may be adapted to the acceleration voltage for being incrementally increased charged particle devices 202, so as to reduce permanent magnetic The deflection effect in the magnetic field of body 231,232, this can reduce charged particle beam angle (α) 116.According to this embodiment, it is applied to The voltage of cathode 110 usually quickly reduces, with allow charged particle beam 115 along substrate 117 carriage direction 101 rapidly, Great-jump-forward it is mobile.The voltage for being applied to cathode 110 usually gradually increases, to return to allowing 115 relatively slower of charged particle beam Along the initial position of the charged particle beam 115 of the first projection axis 102.

According to the another embodiment of this paper, controller generally may be adapted to be associated with the interruption (example for indicating charged particle beam Such as electric arc or short circuit) signal, the signal have interruption position of the charged particle beam on substrate.Controller can be further adapted for Triggering charged particle beam is mobile (selectively temporarily mobile) to the charged particle beam quilt on the substrate moved along carriage direction The position of interruption.According to this embodiment, controller can communicate (communicate) with variable power supply, and variable power supply for example connects It is connected to beam displacement device, so that charged particle beam is shifted along carriage direction.

According to this embodiment, main control unit 92 can have display device 91 and input unit 93 (such as keyboard, mouse Mark, touch screen, or the like), it is possible to provide the predetermined value of electric current and voltage.This scheduled current (that is, electron beam intensity) can provide To controller 90, as illustrated by arrow 94.Controller 90 can for example measure current electric current, and in current electric current and predetermined electricity Air-flow is adjusted in the case of stream is different.Main control unit 92 can further provide for the predetermined value of voltage to variable power supply 80, such as scheme Shown in arrow 84 in 11.The voltage being provided between cathode and anode can be used for influencing the energy of the electronics of transmitting.In system During 700 normal operating, power supply 80 can set the constant potential in the range that cathode 110 is -3 to -30kV, and typically -5 To -10kV, e.g. -10kV.Due to plus earth, constant voltage can be applied between cathode and anode.

Figure 12 is painted the schematic diagram of the charged particle source according to embodiment described herein.It is not limited to as described herein Any specific embodiment, can be used about charged particle source described in Figure 12, Figure 13 and Figure 14 in as described herein any In other embodiments.Particularly, Figure 12 is painted along the y direction perpendicular to charged particle devices for handling substrate Charged particle source 300 part typical section figure.The y direction of charged particle devices may be defined as ingressing and egressing out this The direction of the page.According to some embodiments of this paper, charged particle devices, which may be adapted to increase to extract from charged particle source, to be charged The efficiency of particle, the charged particle are projected as charged particle beam towards substrate.Increase extraction efficiency can produce substrate with The ability of relatively large distance is provided between charged particle devices.In turn, so the positioning of beam deflection device can be allowed to be improved.

According to embodiments described herein, charged particle source 300 may include shell 310.Shell 310 can provide first electrode. According to embodiments described herein, first electrode can be anode, and anode is optionally grounded.Shell 310 can have rear wall 312 And antetheca 314.The antetheca 314 and rear wall 312 of shell 310 can be connected to each other by the first side wall 311 and second sidewall 313.Root According to embodiments described herein, the first side wall 311 and second sidewall 313 can be arranged parallel to each other.

In embodiment as described herein, the antetheca 314 of shell 310 may include that drawing holes (hereinafter can be described as slit Opening is 316).Slit opening 316 may be adapted to charged particle beam across (trespass).According to embodiments described herein, slit is opened Mouth 316 can divide the antetheca 314 of shell 310 for the first front wall section 315 and the second front wall section 317.First front wall section 315 And second front wall section 317 can be symmetrical about line of symmetry 301, it is equal that line of symmetry 301, which is defined as dividing charged particle source 300, Two halves plane.For example, line of symmetry 301 can be perpendicular to the rear wall 312 of the shell 310 of charged particle source 300.Slit opening The length direction of 316 definable charged particle sources 300.In the exemplary embodiment shown in Figure 12, charged particle source 300 Length direction can be described as the direction for entering or leaving this page.

According to embodiments described herein, the antetheca 314 of shell 310 includes the first front wall section 315 and/or the second front wall portion Divide 317, antetheca 314 can be configured to arrange towards second electrode 320.For example, the first front wall section 315 and/or the second front wall portion Divide 317 can tilt towards second electrode 320.In general, according to embodiments described herein, in the operation of charged particle source 300 Period, plasma can be formed in shell 310, in the space between second electrode 320 and the antetheca 314 of shell 310 In 302.In addition, end wall (not being illustrated in figure) can cover the two of the shell of charged particle source 300 according to embodiments described herein End.In addition, charged particle source 300 may include at least one connecting element according to embodiment as described herein, the connection member Part is selected from the group as composed by following elements: the connecting element for electrical power, the connecting element for gas and for cold But the connecting element of fluid.

According to this embodiment, second electrode 320 has at least the first side 322, and the first side 322 is narrow in face of shell 310 Seam opening 316 (that is, the first side of second electrode be also referred to as second electrode front side).In embodiment described herein, the Side 322 can be curved.The curvature of first side 322 can increase the extraction efficiency of charged particle source 300.For example, the first side 322 flexible separate slit openings 316, and referred to as the first side of concave surface, the first side of concave surface can increase the surface of second electrode 320 Product, and can help to assemble the charged particle beam emitted from second electrode towards slit opening 316.Second electrode 320 also may be used With second side 324, in face of the rear wall 312 of shell 310, (that is, second side of second electrode is also referred to as second to second side 324 The rear side of electrode).

According to this embodiment, second electrode 320 can have one or more beam shaping extended structures 325,329.One Or multiple beam shaping extended structures 325,329 can be prominent along the direction of the antetheca 314 towards shell 310 from second electrode 320.One As for, one or more beam shaping extended structures can extend in the direction of longitudinal direction for being parallel to second electrode 320.And It is non-limiting in any particular implementation as described herein, second electrode may include single beam shaping extended structure, 2 beam shapings Extended structure or multiple beam shaping extended structures.

According to this embodiment, one or more beam shaping extended structures 325,329 can be configured to guidance from second electrode 320 charged particle beams issued are by slit 316, to further increase the extraction efficiency of charged particle source 300.Particularly, one A or multiple beam shaping extended structures can be adapted so that during operation, being formed in one or more beam shaping extended structures 325, the electric field line between 329 and the shell 310 of charged particle source 300 guides the ion and second electrode 320 by plasma Interaction caused by electronics towards slit 316.Figure 12 is painted the coulomb reprimand for being included in and being formed by electronics by space charge The exemplary track (please referring to label 305) of the charged particle beam of power.

In this embodiment, the second electrode 320 of charged particle source 300 may include the first beam shaping extended structure 325 And the second beam shaping extended structure 329.First beam shaping extended structure 325 and the second beam shaping extended structure 329 may be arranged at On the opposite side of second electrode 320.According to embodiments described herein, the first beam shaping extended structure and/or the second beam shaping prolong Stretching structure can be integrally formed with second electrode.In another embodiment as described herein, the first beam shaping extended structure and/ Or second beam shaping extended structure can be separately manufactured, and be connected to second electrode during the assembling of second electrode.

According to this embodiment, one or more beam shaping extended structures 325,329 can have at least the first side 328, 332, the first side 328,332 may be disposed so that the first side 322 for being adjacent to second electrode 320.In embodiment described herein, one First side 328,332 of a or multiple beam shaping extended structures 325,329 is flexible.According to embodiments described herein, one A or multiple beam shaping extended structures 325,329 can respectively have second side 326,330.One or more beam shaping extended structures 325,329 second side 326,330 can be configured to the side wall 311 and second sidewall 313 that face shell 310 respectively.It is described herein Embodiment in, second side 326,330 of one or more beam shaping extended structures 325,329, which may be disposed so that, is parallel to shell At least one of 310 the first side wall 311 and second sidewall 313.

In addition, one or more beam shaping extended structures 325,329 can have in face of shell 310 according to this embodiment Antetheca 314 front side 327,331.For example, the front side 327 of the first beam shaping extended structure 325 can be faced towards shell 310 The direction of first front wall section 315.The front side 331 of second beam shaping extended structure 329 can be faced towards before the second of shell 310 The direction of wall part 317.Here in the embodiment, can be formed on front side of one or more 327,331 and one or Edge (edge) between multiple second side 326,330 can be supported during the operation of charged particle source 300 (support) etc. from (ignition) is lighted in daughter.In addition, the orientation of one or more front sides 327,331 can be parallel to the of second electrode 320 Two sides 324.

In general, one or more beam shaping extended structures 325,329 of second electrode 320 may be disposed so that respectively and outside The first side wall 311 and second sidewall 313 of shell 310 separate.Dark space (dark space) can be respectively formed in one or more One or more second side 326,330 of beam shaping extended structure 325,329 and the first side wall 311 and/or second of shell 310 Between side wall 313.In this embodiment, second electrode 320 can also be separated with the rear wall 312 of shell 310, so that dark space shape At in the space between second side 324 of second electrode 320 and the rear wall 312 of shell 310.

According to this embodiment, charged particle source 300 may include cooling system, and cooling system, can for cooling down shell 310 Further improve the energy efficiency of charged particle source 300.E.g., including at least one channel is to accommodate the cooling system of cooling fluid System 350 can be arranged to the rear wall 312 of cooling shell 310.According to this embodiment, cooling system can be with shell 310 integrally It is formed.According to the another embodiment of this paper, cooling system can be for example formed as the rear wall 312 for being at least partially disposed at shell 310 In.

Figure 13 is painted along the y direction perpendicular to charged particle devices for handling the charged particle source 400 of substrate A part typical section figure.The y direction of charged particle source may be defined as ingressing and egressing out the direction of this page.

According to this embodiment, charged particle source 400 has the setting for being similar to charged particle source 300 shown in Figure 12. All features (other than following difference) about Figure 12 description are also applied to embodiment shown in Figure 13 and Figure 14.

About Figure 13, according to this embodiment, second electrode 420 can have one or more beam shaping extended structures 425, 429.One or more beam shaping extended structures 425,429 can be from second electrode 420 along the side of the antetheca 414 towards shell 410 To prominent.In general, one or more beam shaping extended structures can be in the direction for the longitudinal direction for being parallel to second electrode 420 Middle extension.

Similar to about one or more beam shapings extended structure described in Figure 12, one of embodiment shown in Figure 13 Or multiple beam shaping extended structures can be configured to guide the charged particle beam emitted from second electrode 420 by slit 416, to increase Add the extraction efficiency of charged particle source 400.Particularly, one or more beam shaping extended structures can be adapted so that operating Period, the electric field being formed between one or more beam shaping extended structures 425,429 and the shell 410 of charged particle source 400 Line guides the electronics as caused by the ion of plasma and the interaction of second electrode 420 towards slit opening.Figure 13 is drawn Show that the exemplary track for being included in the charged particle beam for the coulomb repulsion that electronics is formed by by space charge (please refers to label 405)。

In this embodiment, the second electrode 420 of charged particle source 400 may include the first beam shaping extended structure 425 And the second beam shaping extended structure 429.First beam shaping extended structure 425 and the second beam shaping extended structure 429 may be arranged at On the opposite end of second electrode 420.According to this embodiment, the first beam shaping extended structure 425 and the second beam shaping extend knot At least one of structure 429 can be integrally formed with second electrode 420.In another embodiment as described herein, the first beam at At least one of shape extended structure 425 and the second beam shaping extended structure 429 can be separately manufactured, and in the group of second electrode 420 Second electrode 420 is connected to during dress.

According to this embodiment, one or more beam shaping extended structures 425,429 can have at least the first side 428, 432, the first side 428,432 may be disposed so that the first side 422 for being adjacent to second electrode 420.In embodiment described herein, one First side 428,432 of a or multiple beam shaping extended structures 425,429 is flexible.According to embodiments described herein, one A or multiple beam shaping extended structures 425,229 can be respectively provided with second side 426,430.One or more beam shaping extended structures 425,429 second side 426,430 can be configured to the first side wall 411 and second sidewall 413 that face shell 410 respectively.Herein In the embodiment, second side 426,430 of one or more beam shaping extended structures 425,429 can be arranged in parallel In at least one of the first side wall 411 of shell 410 and second sidewall 413.

In embodiment as described herein, the first side 428 of the first beam shaping extended structure 425 can be for example relative to outer At least one of the first side wall 411 of shell 410 and second sidewall 413 and tilt.Prolong for example, being formed in and being parallel to the first beam shaping It is sharp between the straight line that the straight line for stretching the first side 428 extension of structure 425 and the first side wall 411 for being parallel to shell 410 extend Angle (α ') can be from 5 ° to 85 °, e.g. 35 °, 45 ° or 55 °.Alternatively, the first side of the first beam shaping extended structure 425 428 gradient can about charged particle beam 407 the longitudinal axis and define.Extend knot for example, being formed in and being parallel to the first beam shaping Acute angle (α ") between the longitudinal axis of straight line and charged particle beam 407 that first side 428 of structure 425 extends can be from 5 ° to 85 °, E.g. 35 °, 45 ° or 55 °.According to this embodiment, similarly, the first side 432 of the second beam shaping extended structure 429 can example Such as tilted relative at least one of the first side wall 411 of shell 410 and second sidewall 413.Is parallel to for example, being formed in The straight line that first side 432 of two beam shaping extended structures 429 extends extends straight with the second sidewall 413 for being parallel to shell 410 Acute angle (α " ') between line can be from 5 ° to 85 °, e.g. 35 °, 45 ° or 55 °.Alternatively, the one the second beam shapings extend knot The gradient of first side 432 of structure 429 can about charged particle beam 407 the longitudinal axis and define.Second is parallel to for example, being formed in Acute angle (α " ") between the longitudinal axis of straight line and charged particle beam 407 that first side 432 of beam shaping extended structure 429 extends can To be e.g. 35 °, 45 ° or 55 ° from 5 ° to 85 °.

In addition, in this embodiment, the first side 428 of the first beam shaping extended structure 425 and second side 426 can be each other It is adjacent.First side 428 and second side 426 can form edge in the contact of first and second side.Similarly, the second beam shaping extends First side 432 of structure 429 and second side 430 can be adjacent to each other.First side 432 and second side 430 can also be at first and second The contact of side forms edge.It is formed in the edge between the first side 428 of the first beam shaping extended structure 425 and second side 426 Small radius of curvature and the edge that is formed between the first side 432 of the second beam shaping extended structure 429 and second side 430 it is small Radius of curvature can support lighting for plasma during the operation of charged particle source 400.

In order to more preferably describe the charged particle source according to embodiment as described herein, Figure 14 is painted band shown in Figure 12 The same section of particle sources 300.In general, Figure 14 indicates embodiment shown in Figure 12.However, the size of feature and that This relationship is also applied to other embodiments as described herein, particularly, for example, the embodiment shown in Figure 13.This Outside, sectional view shown in the geometry of charged particle source shown in the drawings, especially such as Figure 12 and Figure 13, is painted basis The example of the charged particle source of embodiments herein.Geometry in particular shown in the drawings is not intended to limit in any form The range of disclosure case.More it is appropriate to the different geometries of charged particle source in the range of disclosure case.

In general, charged particle source 300 can have the width 604 greater than 30mm, such as about from 30mm to 80mm, than It is such as, for example, 50mm.Charged particle source 300 can have the height 601 greater than 70mm, such as about from 70mm to 130mm, such as E.g. 100mm.In addition, second electrode 320 can have the height 602 greater than 30mm, such as about from 30mm to 50mm, such as E.g. 40mm.Furthermore the height 603 of slit opening 316 can be greater than 2mm, such as about from 2mm to 10mm, for example be, for example, 6mm。

Figure 14 is further painted parallel projection 609 of the charged particle source 300 on projection plane 610.Projection plane is available As the coordinate system in the one-dimensional space.The width of the rear wall 312 of shell 310 can be for example defined as along projection plane 610 Length 611.According to this embodiment, length 611 can be greater than 3mm, such as about from 3mm to 30mm, such as e.g. 10mm.One As for, according to this embodiment, dark space separates the rear wall 312 of shell 310 and second electrode 320.Dark space can have The width defined by the length 612 along projection plane.Length 612 can be greater than 2mm, such as about from 2mm to 10mm, such as example 5mm in this way.Second electrode 320 can have the width defined by the length 613 along projection plane.Length 613 can be greater than 5mm, Such as about from 5mm to 30mm, such as e.g. 10mm.One or more beam shaping extended structures 325,329 can be from the second electricity Pole 320 is in the direction towards antetheca (especially towards the first front wall section 315 of shell 310 and/or the second front wall section 317) Middle one length 614 of protrusion.Length 614 can be greater than 2mm, such as about from 2mm to 20mm, such as e.g. 5mm.It is not limited to Any particular implementation of this paper, each beam shaping extended structure can be from second electrodes in the direction towards the antetheca of shell Prominent different length 614.

In addition, extending knot in the first beam shaping extended structure 325 and/or the second beam shaping according to embodiments described herein The shortest distance between structure 329 and the front wall section of shell 310 may be defined as length 615.According to embodiments described herein, length 615 can be greater than 10mm, such as about from 10mm to 60mm, such as e.g. 30mm.In embodiment as described herein, shell 310 antetheca relative between the farthest point and closest approach of one or more beam shaping extended structures 325,329 along projection The length 616 of plane 609 can be greater than 0mm, such as about from 0mm to 30mm, such as e.g. 15mm.

In general, embodiment shown in Figure 12, Figure 13 and Figure 14 can increase the extraction efficiency of charged particle source, and can Increase the density that the charged particle of substrate to be processed is transferred to from charged particle source.Increased charged particle densities may make band The distance between particle sources and substrate to be processed are bigger.So for example be conducive to the arrangement of beam displacement device.In addition, electrification Biggish distance between particle source and substrate also can promote the displacement of charged particle beam.Therefore, in order to from increased extraction imitate Rate benefits, and the embodiment described in Fig. 1 to 11 also can provide charged particle beam apparatus described herein.

According to embodiments described herein, the biggish distance between charged particle source and substrate can be reduced for making band electrochondria Energy needed for beamlet displacement.Particularly, beam displacement device can make the charged particle beam in closer source generate deflection.Pass through beam position Moving device makes the charged particle beam in closer source generate deflection, can promote to charge with relatively small starting deflection The size of the deflection of the particle beams is relatively high at base plan (level).It so can for example allow charged particle beam flat in substrate There is biggish degree of displacement (degree) on the whole at face, and beam displacement device has reduced energy loss.

Figure 15 is schematically painted according to embodiment described herein for handling the method 1200 of moving substrate.The method It generally comprises and moves 1210 substrates along carriage direction, and handle 1220 substrates using charged particle beam.The method further includes inspection Survey 1230 error signals.In addition, the method includes the transport side when detecting error signal by charged particle beam along substrate 1240 to the second beam trajectories are shifted to from the first beam trajectory.According to the charged particle beam apparatus of embodiments herein and use electrification The method of Particle Beam Processing moving substrate provides advantage following advantages: even during charged particle beam interrupts, it is resulting Substrate will not include untreated area, and such as more polymeric layer of homogeneity is presented.

According to embodiment described herein, by the step of charged particle beam displacement 1240 may include by charged particle beam along The carriage direction of substrate is displaced to the second beam trajectory from the first beam trajectory.Also can change about by charged particle beam angle from the first value It fades to second value and describes the displacement of charged particle beam.In general, charged particle beam is shifted according to embodiments described herein Track and charged particle beam angle including changing charged particle beam.

In embodiment as described herein, charged particle beam displacement is generally betided along carriage direction moving substrate When.In addition, detection error signal alternative includes the error signal that detection indicates the interruption of charged particle beam.For example, wrong Error signal can indicate short circuit, electric arc or similar situation.

According to embodiments described herein, shifting charged particle beam at least along carriage direction can further comprise that will charge The particle beams is displaced to charged particle beam in the firstth area being interrupted on substrate.

Shifting charged particle beam at least along carriage direction can further comprise at least element selected from following group: Apply magnetic field to charged particle beam, apply electrostatic field to charged particle beam, change charged particle beam acceleration voltage, shape will be used for The second source position is shifted or turned to from the first source position at the charged particle source of charged particle beam.

According to embodiments described herein, the method 1200 for handling moving substrate can further comprise in the first pre- timing Between so that charged particle beam is returned to 1,250 first beam trajectories from the second beam trajectory after section.In general, the first predetermined amount of time Length may depend at least one element for being selected from down and listing: the movement speed of substrate, the duration of interruption and with electrochondria The intensity of beamlet.

According to embodiment herein further, for charged particle beam to be displaced to the second beam rail from the first beam trajectory The total period of mark is smaller than the total period for making charged particle beam return to from the second beam trajectory the first beam trajectory.

In embodiment described herein, the method for handling substrate can further comprise shifting charged particle beam 1260 to third beam trajectory, and this method is selectively included in charged particle beam and returns to before the first beam trajectory from the second beam trajectory Or during charged particle beam returns to the first beam trajectory from the second beam trajectory, charged particle beam is displaced to band electrochondria on substrate The secondth area that beamlet is interrupted.

In embodiment herein further, the method for handling substrate can further comprise by charged particle beam It is displaced to the four, the 5th and the 6th beam trajectory, this method selectively includes that charged particle beam is displaced to band electrochondria on substrate The area of third, the 4th and the 5th that beamlet is interrupted.Charged particle beam is moved to the area of third, the 4th and the 5th on substrate can Such as before betiding charged particle beam being made to return to the first beam trajectory from any previous beam trajectory, or make charged particle beam from During any previous beam trajectory returns to the first beam trajectory.In general, charged particle beam is displaced to from the first beam trajectory N-th beam trajectory includes the area n+1 that charged particle beam is displaced to charged particle beam on substrate and is interrupted.

Further according to embodiments described herein, only when detected error signal is more than reservation threshold, can open Beginning shifts charged particle beam along carriage direction.

In embodiment herein further, the method for handling moving substrate may include moving along carriage direction It moves substrate and handles substrate using charged particle beam.Method can further comprise detecting error signal and working as to detect mistake Charged particle beam is set to be displaced to the second beam trajectory from the first beam trajectory with the carriage direction in contrast to substrate when signal.Particularly, Above with respect to Fig. 6 to 14 describe embodiment be applied to when detecting error signal according to the carriage direction of substrate and in contrast to Both carriage directions of substrate shift charged particle beam.

Although the special characteristic of the different embodiments of disclosure case can be shown in some attached drawings and not to be shown in other attached In figure, this is only considering for convenience.Any feature can be combined in any feature of any other attached drawing and be drawn in attached drawing With and/or declare.

Documented description use case also makes any this field skill to disclose disclosure case, including optimal mode Art personnel can implement the theme, including manufacture and using any device or system and execute any method being incorporated to.Though So different particular implementations are disclosed above, but it will be understood by those skilled in the art that the spirit of claimed range and Range allows equivalent modification.Particularly, the non-exclusive feature of above embodiment can be bonded to each other.The range of patentability It is defined by the claims, and may include modification and other examples for betiding those skilled in the art.If the knot of this other example Constitutive element part and the word language of claim have no difference, or including insubstantial upper different from the word language of claim same Deng structural detail, then this other example all means among the scope of the claims.

Claims

1. a kind of for handling the charged particle devices of moveable substrate, described device includes:

Source, the source are used to form charged particle beam, to handle the substrate moved along carriage direction；

Beam displacement device, the beam displacement device is for making the charged particle beam from the first beam trajectory along the carriage direction It is moved at least the second beam trajectory；

Controller, the controller are communicated with the beam displacement device；And

Detection device, the detection device is used to detect the error signal for indicating that the charged particle beam interrupts, wherein working as detection When to the error signal, the controller is suitable for triggering the beam displacement device, so that the charged particle beam is from described the One beam trajectory is moved to second beam trajectory along the carriage direction, and the wherein interruption of the charged particle beam Interruption including the charged particle beam as caused by electric arc.

2. charged particle devices as described in claim 1, wherein the detection device is sensor, the sensor is configured For detection short circuit.

3. charged particle devices as described in claim 1, wherein the controller is suitable for making to indicate the charged particle beam The error signal interrupted is associated with the position that the charged particle beam is interrupted on the substrate, to trigger the beam position Moving device and so that the charged particle beam is moved to second beam trajectory along the carriage direction from first beam trajectory, The charged particle beam is selectively set to be temporally shifted to second beam along the carriage direction from first beam trajectory Track, to allow the charged particle beam to influence the position that the charged particle beam is interrupted on the substrate.

4. charged particle devices as described in claim 1, wherein the beam displacement device includes for generating magnetic field and/or quiet The arragement construction of electric field.

5. charged particle devices as claimed in claim 4, wherein the beam displacement device includes being selected from following group at least One element: one or more air core coils, one or more permanent magnet, one or more electrodes and described for making Source rotates or is displaced to the arragement construction of the second source position from the first source position.

6. such as described in any item charged particle devices of claim 1 to 5, wherein the source further comprises

Shell, the shell provide first electrode, and the shell has rear wall and antetheca；

Slit opening, the slit opening is located in the shell, and for passing through charged particle beam, the slit opening is limited The length direction of the charged particle devices；And

Second electrode, the second electrode are arranged in the shell and have in face of the first side of the slit opening,

Wherein the second electrode includes one or more beam shaping extended structures, one or more of beam shaping extended structures It is prominent from the direction of first lateral edge towards the antetheca of the shell of the second electrode, for guiding the band Electrochondria beamlet passes through the slit opening.

7. a kind of method for handling mobile substrate in the processing system, which comprises

The substrate is moved along carriage direction；

The substrate is handled using charged particle beam；

The first error signal is detected, wherein detecting the first error signal includes the mistake that detection indicates the interruption of the charged particle beam Error signal, and wherein the interruption of the charged particle beam includes the interruption of the charged particle beam as caused by electric arc； And

When detecting the error signal, it is displaced to the charged particle beam along the carriage direction from the first beam trajectory Second beam trajectory.

8. the method for claim 7, wherein the charged particle beam is made to be displaced to the second beam trajectory from the first beam trajectory It betides during moving the substrate along the carriage direction.

9. the method for claim 7, wherein detecting the first error signal includes the mistake that detection indicates short circuit.

10. method according to claim 8, wherein making the charged particle beam be displaced to second beam trajectory includes making institute It states charged particle beam and is displaced to the charged particle beam in the firstth area being interrupted on the substrate.

11. method according to claim 8, wherein making the charged particle beam be displaced to second beam trajectory includes being selected from At least one element of following group: apply magnetic field in the charged particle beam, apply electrostatic field in the charged particle beam, change Become the acceleration voltage of the charged particle beam, the source for being used to form the charged particle beam is shifted or rotated from the first source position To the second source position.

12. method according to claim 8 further comprises after a predetermined period of time returning the charged particle beam first To first beam trajectory.

13. method as claimed in claim 12, wherein the length of first predetermined amount of time depends on being selected from following inventory At least one element: the duration of interruption and the charged particle of the movement speed of the substrate, the charged particle beam The intensity of beam.

14. method as claimed in claim 12, wherein for being displaced to the charged particle beam from first beam trajectory The total period of second beam trajectory is less than for making the charged particle beam return to described first from second beam trajectory The total period of beam trajectory.

15. further comprising making when detecting the second error signal such as described in any item methods of claim 8 to 14 The charged particle beam is displaced to third beam trajectory.

16. method as claimed in claim 15, it is included in that return to the charged particle beam from second beam trajectory described Before first beam trajectory, or during making the charged particle beam return to first beam trajectory from second beam trajectory, The charged particle beam is set to be displaced to the charged particle beam in the secondth area being interrupted on the substrate.

17. a kind of for handling the charged particle devices of moveable substrate, described device includes:

Source, the source are used to form charged particle beam, and to handle the substrate moved along carriage direction, the source includes:

Second electrode, the second electrode are arranged in the shell and have in face of the first side of the slit opening, wherein First lateral bend is far from the slit opening；

Detection device, the detection device are used to detect the error signal for the interruption for indicating the charged particle beam,

Wherein when detecting the error signal, the controller is suitable for triggering the beam displacement device, so that the electrification The particle beams is moved to second beam trajectory from first beam trajectory.