KR20230013878A - Arc Evaporation Source Having Central Depression Magnetic Field and Arc Ion Plating Apparatus, and Vapor Deposition Method of Metal/Metal Compound Using the Same - Google Patents

Abstract

An arc evaporation source having a central depressed magnetic field according to the present invention includes an arc target having a circular cross section, a permanent magnet formed in a ring shape, and an anode surrounding the arc target, wherein the permanent magnet is positioned below the arc target. Therefore, the arc evaporation source can restrict the motion of the arc to the center of the target, increase the consumption efficiency of the target, and control the arc discharge without multiple additional devices such as an electromagnet.

Description

Arc Evaporation Source Having Central Depression Magnetic Field and Arc Ion Plating Apparatus, and Vapor Deposition Method of Metal/ Metal Compound Using the Same}

The present invention relates to an arc evaporation source, an arc ion plating device including the same, and a method for depositing metals and metal compounds using the same. Arc evaporation source and arc ion plating device including the arc evaporation source that can form arc discharge with high target consumption efficiency and stable evaporation even when the target is consumed by adjusting arc discharge to occur centered on the center, and metal and It relates to a method for depositing metal compounds.

The arc ion plating method uses a low voltage (30V or less), high current (50A-200A) electric field to generate a micrometer-sized arc on the surface of the target material by using a metal, which is an evaporation material, as a cathode target. It melts the material locally and evaporates the target material.

These micro-arcs generate arc movements due to the action of the arc's electromagnetic field in the cathode region, and arcs are generated over the entire target surface area, and the target surface melts and evaporates at an arc temperature of 1650 ° C to 2950 ° C. At this time, the target material evaporated from the evaporation source in a liquid and gaseous state reaches the object to be processed by the momentum acquired from the evaporation source.

In the deposition process using the arc ion plating device, atoms in gaseous state are ionized while passing through plasma formed in front of the target, and metal clusters in liquid state are radiated by the momentum they have when melted. At this time, micro-droplets and macro-droplets are formed depending on the size of the melting point by the micro-arc on the surface of the metal. These macro-droplets move without being ionized and affect the growth of the film.

On the other hand, the arc ion plating device has an ionization tendency of about 70% or more, and the energy accelerated by the cathode electric field applied to the object to be treated is high, so it has excellent adhesion. Arc ion plating is also used to coat metals, metal nitrides, metal carbides, and metal oxides to improve the performance of mechanical parts.

In general, in the case of a conventional arc ion plating device, as a method of forming a magnetic field of an arc evaporation source, a combination of an electromagnet and a cylindrical permanent magnet using current is used, and the motion of the arc discharge point is controlled by adjusting the magnetic field using these. and strengthen

However, such a conventional technique controls the magnetic field on the surface of the target by moving an assembly such as an electromagnet and a cylindrical permanent magnet in order to suppress a phenomenon in which the evaporation rate is reduced according to the consumption of the target. That is, the method of using the current density of the electromagnet and the permanent magnet in combination requires movement of the support and the magnets to form an appropriate magnetic field on the target surface.

Since separate structures for moving the support and the magnet are inevitably provided, there is a problem that the device becomes complex and heavy, and it is practically very difficult to precisely control the support and the magnet in conjunction with the consumption of the target. .

Therefore, a method for solving these problems is required.

Korean Patent Registration No. 10-1784648 Korean Patent Registration No. 10-2045209 Korean Patent Publication No. 10-2020-0036034

The present invention is an invention made to solve the problems of the prior art described above, and supplements the disadvantages of the existing arc evaporation source by arranging a ring-shaped permanent magnet in the structure at the bottom of the target to form a uniform magnetic field in the form of a depression in the center. An arc evaporation source capable of confining the movement of the arc to the center of the target, increasing the consumption efficiency of the target, and adjusting the confinement of the arc discharge without multiple additional devices such as an electromagnet, and an arc ion plating device including the same, And it has an object to provide a method for depositing metals and metal compounds using the same.

The tasks of the present invention are not limited to the tasks mentioned above, and other tasks not mentioned will be clearly understood by those skilled in the art from the following description.

An arc evaporation source having a central recessed magnetic field of the present invention for achieving the above object includes an arc target having a circular cross section, a permanent magnet formed in a ring shape, and an anode surrounding the arc target, wherein the permanent magnet It is located below the arc target.

In this case, the permanent magnet may continuously form a magnetic field with a depressed central portion from the melting point to the melting point of the arc target.

An outer diameter of the permanent magnet may be larger than a diameter of the arc target.

In addition, the arc ion plating device having a central recessed magnetic field of the present invention for achieving the above object may include the arc evaporation source as described above.

In addition, the metal and metal compound deposition method of the present invention for achieving the above object may be performed using the arc evaporation source and the arc ion plating device as described above.

An arc evaporation source having a central recessed magnetic field, an arc ion plating device including the same, and a metal and metal compound deposition method using the arc evaporation source of the present invention to solve the above problems are a ring-shaped permanent magnet in a structure at the bottom of the target Arranged to form a uniform magnetic field in the form of a depression in the center, arc discharge can be induced even without a high-cost current-controlled electromagnet, and also by inducing arc discharge centered on the center of the target, the target's There is an effect of maximizing the consumption efficiency and maintaining the supply of the evaporation material in a uniform and stable amount until the end of the target life.

The effects of the present invention are not limited to the effects mentioned above, and other effects not mentioned will be clearly understood by those skilled in the art from the description of the claims.

1 is a view showing the structure of an arc ion plating apparatus according to an embodiment of the present invention;
2 is a view showing the shape of a permanent magnet in an arc ion plating apparatus according to an embodiment of the present invention;
Figure 3 is a view showing the arrangement interval between each component of the arc ion evaporation source according to an embodiment of the present invention;
4 is a graph predicting the appearance of an arc ion evaporation source according to an embodiment of the present invention and the structure of a magnetic field appearing on an anode and an arc target at a plurality of positions moved downward by a predetermined distance from the surface of the arc target. drawing;
5 is an arc ion evaporation source according to an embodiment of the present invention, a diagram including a graph showing lines of magnetic force through computational prediction of a magnetic field and predicted magnetic field strength;
6 is a schematic view of a shape in which arc discharge occurs on the surface of an arc target according to consumption of the arc target;
Figure 7 (a) is a schematic view showing the movement of a material according to the arc discharge when a weak magnetic field is formed in the center of the arc target by the arc ion evaporation source according to an embodiment of the present invention;
Figure 7 (b) is a schematic view showing the movement of materials according to the arc discharge when a strong magnetic field is formed in the center of the arc target by the conventional arc ion evaporation source;
8 is a view showing an area where permanent magnets can be placed in an arc ion evaporation source according to an embodiment of the present invention; and
FIG. 9 is a diagram showing each result of predicting the magnetic field distribution to find the dispositionable area of the permanent magnet shown in FIG. 8 .

Hereinafter, a preferred embodiment of the present invention in which the object of the present invention can be realized in detail will be described with reference to the accompanying drawings. In describing the present embodiment, the same name and the same reference numeral are used for the same configuration, and additional description thereof will be omitted.

1 is a view showing the structure of an arc ion plating device according to an embodiment of the present invention, and FIG. 2 shows the shape of a permanent magnet 120 in an arc ion plating device according to an embodiment of the present invention. is the drawing shown.

1 and 2, the arc ion plating apparatus according to an embodiment of the present invention includes an arc evaporation source including an arc target 10, a permanent magnet 120, and an anode 110. .

At this time, the arc target 10 has a cylindrical shape with a circular cross section, and the anode 110 is formed in the shape of a disc so as to surround the circumference of the arc target 10 .

In this embodiment, the arc target 10 is exemplified as a 3-inch type having a height of 30 mm and a diameter of 69 mm, but the standard of the arc target 10 can be applied without limitation to a 2-inch type, 4-inch type, 5-inch type, etc. Of course.

As the anode 110, a low carbon steel material serving as a magnetic yoke through which lines of magnetic force formed from the permanent magnet 120 provided under the arc target 10 may be moved may be used.

In addition, in this embodiment, the anode 110 is connected to the assembly structure of the arc target 10, which is an electrical cathode, and the supports 130 and 140 by an insulator 160. At this time, the supports 130 and 140 include a lower support 130 provided with a permanent magnet 120 and an upper support 140 on which the target folder 150 supporting the insulator 160 is seated.

The permanent magnet 120 is formed in a ring shape and has a shape in which a through hole 121 is formed on the inside, and has a feature of being located below the arc target 10 . In addition, the permanent magnet 120 continuously forms a well-shaped magnetic field from the melting point of the arc target 10 to the melting point.

In addition, in this embodiment, the outer diameter of the permanent magnet 120 has a shape formed larger than the diameter of the arc target 10, but the outer diameter of the permanent magnet 120 is not limited thereto.

3 is a view showing the arrangement interval between each component of the arc ion evaporation source according to an embodiment of the present invention.

As shown in FIG. 3, the permanent magnet 120 is provided at a point away from the lower end of the arc target 10 by a first distance d1, and the outer circumferential surface of the arc target 10 and the inner circumferential surface of the permanent magnet 120 The horizontal distance between them forms a second interval d2 from each other.

In addition, in this embodiment, the inner diameter d3 of the permanent magnet 120 is larger than the outer diameter of the arc target 10, but is not limited thereto. ) may be formed smaller than the outer diameter of

At this time, the first distance d1 , the second distance d2 , and the inner diameter d3 of the permanent magnet 120 may be determined within a predetermined range according to the standard of the arc target 1 .

For example, when the arc target 10 is a 3-inch type having a height of 30 mm and a diameter of 69 mm as in the present embodiment, the first distance d1 may be preferably 22 mm, and the second distance d2 may be 4 mm.

In addition, in this case, the permanent magnet 120 may have a shape having a height of 5 mm, an inner diameter (d3) of 81 mm, and an outer diameter of 91 mm, and the material of the permanent magnet 120 is sintered NdFeB permanent magnet (surface magnetic field strength of 4 kG, coercive force). (Coercivity) 1030 kA/m).

4 shows the appearance of an arc ion evaporation source according to an embodiment of the present invention, and the magnetic field appearing in the anode 110 and the arc target 10 at a plurality of positions moved downward by a predetermined interval from the surface of the arc target 10 It is a diagram including a graph in which the structure of is predicted.

4, the anode 110 and the arc target 10 from the position moved 2 mm downward from the surface of the 3-inch arc target 10 (based on the horizontal position of the anode surface) down to 27 mm at intervals of 5 mm. The predicted magnetic field strength (B,n) of the structure of the appearing magnetic field is shown.

Referring to this, it can be seen that a strong magnetic field of 20G or more appears at the edge of the arc target 10 at the upper part of the arc target 10, and a constant magnetic field of around 10G appears strong at the center of the arc target 10.

And at a position moved downward from the surface of the arc target 10, a magnetic field strength of 50G-150G appears at the edge of the arc target 10, whereas a magnetic field strength of 10G or less is formed in the center of the arc target 10 ,

That is, the present embodiment has a characteristic in that a central recessed magnetic field or a well-shaped magnetic field whose strength rapidly changes from the edge to the center of the arc target 10 is formed.

And FIG. 5 is a graph showing the shape of the magnetic field line and the predicted magnetic field strength through computational prediction of the magnetic field in the arc ion evaporation source according to an embodiment of the present invention.

6 is a schematic view of a shape in which arc discharge occurs on the surface of the arc target 10 according to the consumption of the arc target 10 .

Specifically, FIG. 6 (a) is a schematic diagram of the arc discharge trajectory that appears when the consumption of the arc target 10 is small, and FIG. 6 (b) and FIG. 6 (c) show the consumption of the arc target 10 As it is, the arc discharge trajectory appearing on the surface of the arc target 10 is modeled.

As shown in these, arc discharge occurs in the arc target 10, the metal is melted and the arc target 10 is consumed, and in the arc evaporation source of the present invention, the arc discharge proceeds as the arc target 10 is consumed. The dot has the advantage of being gradually moved near the center of the arc target 10 .

The advantage of the present invention is that the consumption efficiency of the arc target 10 can be increased and the amount of material evaporated from the arc target 10 can be kept constant, so that the deposition rate according to the progress of the life of the arc target 10 appearing in the film formation process decline can be prevented.

And FIG. 7(a) is a schematic diagram showing the movement of materials according to arc discharge when a weak magnetic field is formed in the center of the arc target 10 by the arc ion evaporation source according to an embodiment of the present invention. 7(b) is a schematic diagram showing the movement of materials according to arc discharge when a strong magnetic field is formed in the center of the arc target 10 by a conventional arc ion evaporation source.

In the case of (a) of FIG. 7, the arc discharge point is maintained at the center and arc discharge occurs, whereas in (b) of FIG. As it moves to the edge of , it can be seen that arc discharge appears at a point below 20G.

In the form shown in FIG. 7 (b), even if the target material is melted when the arc target 10 is consumed, since the scattering angle of the droplets of the molten material is only 20 ° to 30 °, the material on the inner wall of the arc target 10 This re-adhesion phenomenon occurs, and the normal movement of the material is hindered, resulting in a decrease in deposition rate during the process.

On the other hand, the consumption phenomenon of the arc target 10 was observed by mounting the arc evaporation source to the arc evaporation source of the present invention having a central recessed magnetic field whose strength rapidly changes from the edge to the center of the arc target 10, Test conditions were such that argon (Ar) was drawn into the arc ion plating device at a pressure of 40 mTorr, and arc discharge was continued with a target current of 90 A.

As a result, the arc discharge of the arc target 10 made of titanium was well formed and the consumption shape of the arc target 10 was also excellent. In addition, when the arc target 10 made of chrome was mounted and the test was performed under the same conditions, the same results were obtained. That is, in both the titanium and chromium arc targets 10, target consumption in the form of a central depression in which target consumption efficiency is maximized is observed.

FIG. 8 is a view showing a placeable area R of the permanent magnet 120 in the arc ion evaporation source according to an embodiment of the present invention, and FIG. 9 is a placeable area of the permanent magnet 120 shown in FIG. 8 It is a diagram showing each result of predicting the magnetic field distribution to find (R).

The outer diameter and height according to the inner diameter d3 of the permanent magnet 120 may be variously combined in the positionable area R, and preferably, the thickness and height of the permanent magnet 120 may be 10 mm or less. Also, in this case, the permanent magnet 120 may be a NdFeB-based or SmCo-based permanent magnet.

8 and 9, the placeable region R of the permanent magnet 120 for forming the central recessed magnetic field according to the present invention is the permanent magnet 120 from the lower end of the arc target 10 It may be determined within a predetermined range according to the first interval d1, which is the vertical distance to the distance, and the inner diameter d3 of the permanent magnet 120.

For example, when the arc target 10 is a 3-inch type with a height of 30 mm, the first distance d1 may be in the range of 15 to 30 mm, and the inner diameter d3 of the permanent magnet 120 may be in the range of 70 to 90 mm.

In addition, when the arc target 10 is a 4-inch type with a height of 30 mm, the first distance d1 may be in the range of 15 to 30 mm, and the inner diameter d3 of the permanent magnet 120 may be in the range of 90 to 110 mm.

In addition, when the arc target 10 is a 5-inch type with a height of 30 mm, the first interval d1 may be in the range of 15 to 30 mm, and the inner diameter d3 of the permanent magnet 120 may be in the range of 110 to 130 mm.

And, when the arc target 10 is 2-inch type with a height of 30 mm, the first distance d1 may be in the range of 15 to 30 mm, and the inner diameter d3 of the permanent magnet 120 may be in the range of 50 to 70 mm.

And as shown in FIG. 9, the arc evaporation source having a central recessed magnetic field according to the present invention shows a strong magnetic field at the edge of the arc target 10 and a weaker magnetic field at the center of the arc target 10 in all forms. You can check.

As described above, the preferred embodiments according to the present invention have been reviewed, and the fact that the present invention can be embodied in other specific forms without departing from the spirit or scope in addition to the above-described embodiments is a matter of ordinary knowledge in the art. It is self-evident to them. Therefore, the embodiments described above are to be regarded as illustrative rather than restrictive, and thus the present invention is not limited to the above description, but may vary within the scope of the appended claims and their equivalents.

10: arc target
110: anode
120: permanent magnet
121: through hole
130, 140: support
150: target folder
160: insulator
R: placeable area

Claims (5)

An arc target having a circular cross section;
A permanent magnet formed in a ring shape; and
an anode surrounding the circumference of the arc target;
Including,
The permanent magnet is located below the arc target,
Arc evaporation source. According to claim 1,
The permanent magnet,
Forming a magnetic field in the form of a depressed central portion continuously from the melting point of the arc target to the melting end point,
Arc evaporation source. According to claim 2,
The outer diameter of the permanent magnet is formed larger than the diameter of the arc target,
Arc evaporation source. An arc ion plating apparatus comprising the arc evaporation source of any one of claims 1 to 3. A method of depositing metals and metal compounds using the arc ion plating device of claim 4.

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