CN107071673A - A kind of silicon substrate MEMS array loudspeaker - Google Patents
A kind of silicon substrate MEMS array loudspeaker Download PDFInfo
- Publication number
- CN107071673A CN107071673A CN201710082342.6A CN201710082342A CN107071673A CN 107071673 A CN107071673 A CN 107071673A CN 201710082342 A CN201710082342 A CN 201710082342A CN 107071673 A CN107071673 A CN 107071673A
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- mrow
- sound
- micro
- mems
- silicon substrate
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Classifications
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R19/00—Electrostatic transducers
- H04R19/02—Loudspeakers
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R2400/00—Loudspeakers
- H04R2400/11—Aspects regarding the frame of loudspeaker transducers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02T—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO TRANSPORTATION
- Y02T90/00—Enabling technologies or technologies with a potential or indirect contribution to GHG emissions mitigation
Abstract
The present invention relates to a kind of silicon substrate MEMS array loudspeaker, including substrate, multiple micro- sound units of MEMS, multiple micro- sound cell arrays of MEMS are on substrate；The micro- sound units of MEMS include vibrating diaphragm as target, are connected to the upper insulating trip and lower insulating trip and the upper conductive plate as Top electrode and the lower conductive plate as bottom electrode of vibrating diaphragm upper and lower surface, upper conductive plate is arranged on upper insulating trip, lower conductive plate is arranged on lower insulating trip, centre bore is designed with the upper insulating trip and lower insulating trip, upper conductive plate is provided with multiple sound holes connected with centre bore, and lower conductive plate is provided with the passage connected with centre bore.The present invention has thickness of thin, the features such as tonequality is good.
Description
Technical field
The present invention relates to loudspeaker techniques field, and in particular to a kind of silicon substrate MEMS array loudspeaker.
Background technology
Existing market upper speaker is usually coil-moving speaker, and moving iron type loud-speaker, piezo-electric loudspeaker and electrostatic are raised
Sound device, and market is thinner to loudspeaker requirements thickness, the apparent demand of tonequality it is growing, whole electronics industry is by big portion
Divide Products Digital and miniaturization, existing loudspeaker can not meet the demand of electronics industry.
The content of the invention
For above-mentioned technical problem, the present invention provides a kind of silicon substrate MEMS array loudspeaker solved the above problems.
Realize that technical scheme is as follows：
A kind of silicon substrate MEMS array loudspeaker, including substrate, multiple micro- sound units of MEMS, multiple micro- sound cell arrays of MEMS
On substrate；
The micro- sound units of MEMS include as target vibrating diaphragm, be connected to vibrating diaphragm upper and lower surface upper insulating trip and it is lower absolutely
Embolium and the upper conductive plate as Top electrode and the lower conductive plate as bottom electrode, upper conductive plate are arranged on upper insulating trip,
Lower conductive plate is arranged on lower insulating trip, centre bore is designed with the upper insulating trip and lower insulating trip, upper conductive plate is provided with more
The individual sound hole connected with centre bore, lower conductive plate is provided with the passage connected with centre bore.
Further, single MEMS micro- sound units are shaped as equilateral hexagon.
Further, the vibrating diaphragm includes the edge part and circular pars intermedia of regular hexagon, and middle part is in edge part
Center, between pars intermedia and edge part pass through S types suspension line connect.
Further, the S types suspension line has four.
Further, the material of the vibrating diaphragm and suspension line is all silicon fiml.
Further, the micro- sound units of the MEMS have 1024.
Sound pressure level setting including it, the algorithm of sound pressure level is as follows；
S1, is X by the comsol resonant frequency F0 for simulating the vibrating diaphragm for drawing the micro- sound units of single MEMS；
S2, the resonant frequency F0 for presetting silicon substrate MEMS array loudspeaker is Y；
S3, then the sound pressure level of silicon substrate MEMS array loudspeaker F0 points at 1mIt is i.e. single
The sound pressure level of individual micro- sound unit
SPL in S4, checking S31, acted on by the diaphragm with electric charge by upper bottom crown alternating electric field, on diaphragm
Unit motion meets vibration equation：
M is element quality, and c is damping, and k is rigidity, and u is motion vector, and t is the time, and f (t) is electric field force load；
Diaphragm is of reciprocating vibration with 20um amplitudes, drives surrounding air motion, sound wave is from the close-by examples to those far off propagated, meet fluctuation side
Journey：
Wherein wave numberW is angular frequency, and Co is the velocity of sound, and p (x) is acoustic pressure at the x of the direction of propagation,
It is that any place's sound pressure level Lp is in Po=2 × 10-5Pa, space to take reference sound pressure：
Acoustic pressure SPLa of micro- sound unit in 1cm is calculated, then passes through formula(in formula
La is the distance at a, and Lb is the distance at b) draw micro- sound cell S PL1Verified.
Employ such scheme, the ultrasonic AC signal positive signal of Top electrode (upper conductive plate) access of micro- sound unit, lower electricity
The ultrasonic AC signal negative signal of pole (lower conductive plate) access, target is set to direct current biasing, the positive signal of Top electrode during work
Repel each other with the positive charge of target, the negative signal of bottom electrode and the positive charge of target are mutually attracting, target (vibrating diaphragm)
Move up and down, target (vibrating diaphragm), which moves up and down, promotes air sounding, dissipated by Top electrode (upper sound hole) with alternating signal
It is sent in air, is listened by human ear.MEMS is adjusted by the sounding quantity and time of software 1024 micro- sound units of control again
The volume and frequency of array loudspeaker, improve tonequality, people is heard excellent melody.The loudspeaker thickness of the present invention is more
Thin, tonequality is apparent, and the pronunciation of loudspeaker of the present invention will not be changed by analog signal, but is directly produced by data signal,
The distortion brought in signal conversion process is greatly reduced, occurring composite loudspeaker by multiple micro- sound unit segmentations compares conventional loudspeakers
Frequency response it is more flat, tonequality is more perfect, the pressure difference design of the push-and-pull of upper/lower electrode design and upper lower opening so that our MEMS
Loudspeaker possesses higher sound pressure level than other MEMS.
Brief description of the drawings
Fig. 1 is structural representation of the invention；
Fig. 2 is the structural representation of the micro- sound units of MEMS；
Fig. 3 is the structural scheme of mechanism of vibrating diaphragm；
Fig. 4 is the curve map of sound pressure level and resonant frequency.
Embodiment
The present invention is further described with specific embodiment below in conjunction with the accompanying drawings.
Such as Fig. 1 is to Fig. 3, a kind of silicon substrate MEMS array loudspeaker, including 1,1024 micro- sound units 2 of MEMS of substrate, multiple
The micro- sound cell arrays of MEMS are on substrate, and single micro- sound units of MEMS are shaped as equilateral hexagon；
The micro- sound units of MEMS include vibrating diaphragm 21 as target, are connected to the and of upper insulating trip 22 of vibrating diaphragm upper and lower surface
Lower insulating trip 23 and the upper conductive plate 24 as Top electrode and the lower conductive plate 25 as bottom electrode, upper conductive plate are arranged on upper
On insulating trip, lower conductive plate is arranged on lower insulating trip, and centre bore 26 is designed with the upper insulating trip and lower insulating trip, is uploaded
Guide plate is provided with multiple sound holes 27 connected with centre bore, and lower conductive plate is provided with the passage 28 connected with centre bore.
Vibrating diaphragm 21 includes the edge part 211 and circular pars intermedia 212 of regular hexagon, and middle part is in edge part
The heart, is connected between pars intermedia and edge part by four S types suspension lines 213, and the material of vibrating diaphragm and suspension line is all silicon fiml.
The F0 of silicon substrate MEMS array loudspeaker and the setting of sound pressure level, we preset it for 800Hz, its acoustic pressure SPL
For the 70dB at 1m, we show that the F0 of each micro- sound unit is 22046Hz by simulation, then silicon substrate MEMS array is raised
The sound pressure level of sound device F0 points at 1mAlso
It is the sound pressure level for saying single micro- sound unit
We are acted on by the diaphragm with electric charge by upper bottom crown alternating electric field again, and unit motion is met on diaphragm
Vibration equation：
M is element quality, and c is damping, and k is rigidity, and u is motion vector, and t is the time, and f (t) is electric field force load；
Diaphragm is of reciprocating vibration with 20um amplitudes, drives surrounding air motion, sound wave is from the close-by examples to those far off propagated, meet fluctuation side
Journey：
Wherein wave numberW is angular frequency, and Co is the velocity of sound, and p (x) is acoustic pressure at the x of the direction of propagation,
It is that any place's sound pressure level Lp is in Po=2 × 10-5Pa, space to take reference sound pressure：
Acoustic pressure SPL of micro- sound unit in 1cm is calculated by comsol softwares againF0=22046
=78dB, such as Fig. 4, then pass through formulaDraw micro- sound cell S PL1=38dB, substantially meets and sets
Meter is required.
Gap on the micro- sound units of MEMS is set, it would be desirable to the sound pressure level of the micro- sound units of MEMS
SPL1=38.6dB, the anti-acoustic pressure for pushing away single micro- sound unitSo its amplitude(p is acoustic pressure, and r is distance, and S is to shake
The area of film, f is frequency), that is to say, that each micro- sound unit at least needs 26um gap.
Claims (7)
1. a kind of silicon substrate MEMS array loudspeaker, it is characterised in that：
Including substrate,
Multiple micro- sound units of MEMS, multiple micro- sound cell arrays of MEMS are on substrate；
The micro- sound units of MEMS include vibrating diaphragm as target, are connected to the upper insulating trip and lower insulating trip of vibrating diaphragm upper and lower surface
And the upper conductive plate as Top electrode and the lower conductive plate as bottom electrode, upper conductive plate be arranged on upper insulating trip on, pass down
Guide plate is arranged on lower insulating trip, is designed with centre bore on the upper insulating trip and lower insulating trip, upper conductive plate provided with it is multiple with
The sound hole of centre bore connection, lower conductive plate is provided with the passage connected with centre bore.
2. a kind of silicon substrate MEMS array loudspeaker according to claim 1, it is characterised in that：The single micro- sound units of MEMS
It is shaped as equilateral hexagon.
3. a kind of silicon substrate MEMS array loudspeaker according to claim 1, it is characterised in that：The vibrating diaphragm includes positive six side
The edge part of shape and circular pars intermedia, middle part is hung in the center of edge part between pars intermedia and edge part by S types
Line is connected.
4. a kind of silicon substrate MEMS array loudspeaker according to claim 3, it is characterised in that：The S types suspension line has four
Bar.
5. a kind of silicon substrate MEMS array loudspeaker according to claim 3, it is characterised in that：The vibrating diaphragm and suspension line
Material is all silicon fiml.
6. a kind of silicon substrate MEMS array loudspeaker according to claim 1, it is characterised in that：The micro- sound units of MEMS have
1024.
7. a kind of silicon substrate MEMS array loudspeaker according to any one in claim 1-6, it is characterised in that：Including it
Sound pressure level setting, the algorithm of sound pressure level is as follows；
S1, is X by the comsol resonant frequency F0 for simulating the vibrating diaphragm for drawing the micro- sound units of single MEMS；
S2, the resonant frequency F0 for presetting silicon substrate MEMS array loudspeaker is Y；
S3, then the sound pressure level of silicon substrate MEMS array loudspeaker F0 points at 1mI.e. single micro- sound
The sound pressure level of unit
SPL in S4, checking S31, acted on by the diaphragm with electric charge by upper bottom crown alternating electric field, unit on diaphragm
Motion meets vibration equation：
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<mo>&part;</mo>
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</msup>
<mi>u</mi>
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<mo>&part;</mo>
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<mi>k</mi>
<mi>u</mi>
<mo>=</mo>
<mi>f</mi>
<mrow>
<mo>(</mo>
<mi>t</mi>
<mo>)</mo>
</mrow>
<mo>,</mo>
</mrow>
M is element quality, and c is damping, and k is rigidity, and u is motion vector, and t is the time, and f (t) is electric field force load；
Meet wave equation：
<mrow>
<mfrac>
<mrow>
<msup>
<mo>&part;</mo>
<mn>2</mn>
</msup>
<mi>p</mi>
<mrow>
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<mi>x</mi>
<mo>)</mo>
</mrow>
<mo>=</mo>
<mn>0</mn>
<mo>,</mo>
</mrow>
Wherein wave numberW is angular frequency, and Co is the velocity of sound, and p (x) is acoustic pressure at the x of the direction of propagation,
It is that any place's sound pressure level Lp is in Po=2 × 10-5Pa, space to take reference sound pressure：
<mrow>
<mi>L</mi>
<mi>p</mi>
<mo>=</mo>
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<mi>log</mi>
<mn>10</mn>
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</mrow>
1
Acoustic pressure SPLa of micro- sound unit in 1cm is calculated, then passes through formula(La is in formula
Distance at a, Lb is the distance at b) draw micro- sound cell S PL1Verified.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710082342.6A CN107071673B (en) | 2017-02-16 | 2017-02-16 | Silicon-based MEMS array loudspeaker |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710082342.6A CN107071673B (en) | 2017-02-16 | 2017-02-16 | Silicon-based MEMS array loudspeaker |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107071673A true CN107071673A (en) | 2017-08-18 |
| CN107071673B CN107071673B (en) | 2023-06-02 |
Family
ID=59621336
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710082342.6A Active CN107071673B (en) | 2017-02-16 | 2017-02-16 | Silicon-based MEMS array loudspeaker |
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| Country | Link |
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| CN (1) | CN107071673B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110189686A (en) * | 2018-11-21 | 2019-08-30 | 友达光电股份有限公司 | Display device |
| CN111885468A (en) * | 2020-07-09 | 2020-11-03 | 诺思(天津)微系统有限责任公司 | MEMS piezoelectric speaker |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009188703A (en) * | 2008-02-06 | 2009-08-20 | Yamaha Corp | Sound-production method and speaker |
| CN105282671A (en) * | 2014-07-24 | 2016-01-27 | 北京卓锐微技术有限公司 | Silicon capacitor microphone capable of working at high sound pressure level |
| CN106028243A (en) * | 2015-03-25 | 2016-10-12 | Dsp集团有限公司 | Pico-speaker acoustic modulator |
-
2017
- 2017-02-16 CN CN201710082342.6A patent/CN107071673B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009188703A (en) * | 2008-02-06 | 2009-08-20 | Yamaha Corp | Sound-production method and speaker |
| CN105282671A (en) * | 2014-07-24 | 2016-01-27 | 北京卓锐微技术有限公司 | Silicon capacitor microphone capable of working at high sound pressure level |
| CN106028243A (en) * | 2015-03-25 | 2016-10-12 | Dsp集团有限公司 | Pico-speaker acoustic modulator |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110189686A (en) * | 2018-11-21 | 2019-08-30 | 友达光电股份有限公司 | Display device |
| CN111885468A (en) * | 2020-07-09 | 2020-11-03 | 诺思(天津)微系统有限责任公司 | MEMS piezoelectric speaker |
| CN111885468B (en) * | 2020-07-09 | 2021-12-24 | 诺思(天津)微系统有限责任公司 | MEMS piezoelectric speaker |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107071673B (en) | 2023-06-02 |
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