CN107065085A - Photoelectric conversion device - Google Patents
Photoelectric conversion device Download PDFInfo
- Publication number
- CN107065085A CN107065085A CN201710381633.5A CN201710381633A CN107065085A CN 107065085 A CN107065085 A CN 107065085A CN 201710381633 A CN201710381633 A CN 201710381633A CN 107065085 A CN107065085 A CN 107065085A
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- Prior art keywords
- photodetector
- photoelectric conversion
- conversion device
- planar waveguide
- flashlight
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4219—Mechanical fixtures for holding or positioning the elements relative to each other in the couplings; Alignment methods for the elements, e.g. measuring or observing methods especially used therefor
- G02B6/4236—Fixing or mounting methods of the aligned elements
- G02B6/4245—Mounting of the opto-electronic elements
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
- G02B6/421—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms the intermediate optical component consisting of a short length of fibre, e.g. fibre stub
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4219—Mechanical fixtures for holding or positioning the elements relative to each other in the couplings; Alignment methods for the elements, e.g. measuring or observing methods especially used therefor
- G02B6/4236—Fixing or mounting methods of the aligned elements
- G02B6/4237—Welding
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Optical Couplings Of Light Guides (AREA)
- Light Receiving Elements (AREA)
Abstract
A kind of photoelectric conversion device, including photodetector, co-planar waveguide and optical coupling structure, wherein, photodetector, upside-down mounting is welded in the surface of co-planar waveguide, so that the electrode of photodetector and the transmission line of co-planar waveguide are connected；Optical coupling structure, for by photosurface of the signal of transmission optically coupling to photodetector.Optical coupling structure includes V-groove substrate and at least one 45 ° of sloping optical fibers, wherein：V-groove substrate, the V-groove with some periodic arrangements, each V-groove is used for any fixed at least one 45 ° of sloping optical fibers.The present invention tips upside down on photodetector using face-down bonding technique on the surface of co-planar waveguide, and the transmission line of the electrode of photodetector and co-planar waveguide can be attached by flip chip bonding, therefore the influence of the stray inductance introduced in common encapsulation process due to gold wire bonding is reduced, device performance is optimized.
Description
Technical field
The invention belongs to photoelectron/field of microelectronic devices, relate more specifically to a kind of photoelectric conversion device.
Background technology
With the rapid growth of broadband traffic, optic communication device is just towards integrated, small size, Large Copacity, high-speed
Direction develop.The development trend of Highgrade integration causes device array to be integrated into study hotspot.Detector receiving module is made
For the core of Networks of Fiber Communications receiver, its structure directly determines the performance of device.
Detector chip generally uses lens mode direct-coupling, but for the detector chip of general structure,
Want to realize the direct-coupling of lens mode, it is necessary to which detector chip is carried out into three-dimensional encapsulation, and being transmitted across in microwave signal
Cheng Zhong, microwave signal needs to carry out 90 ° of turnings, therefore has had a strong impact on the transmission rate of device；Detector chip it is another
Coupled modes are that light path is turned into 90 °, and detector chip is directly affixed on co-planar waveguide, and this is accomplished by be detected with spun gold
The electrode of device chip is connected with co-planar waveguide, but gold wire bonding can introduce stray inductance, can equally influence the transmission rate of device.
The content of the invention
Based on problem above, it is a primary object of the present invention to propose a kind of photoelectric conversion device, for solving above skill
At least one of art problem.
To achieve these goals, the present invention proposes a kind of photoelectric conversion device, including photodetector, co-planar waveguide and
Optical coupling structure, wherein：
Photodetector, upside-down mounting is welded in the surface of co-planar waveguide, so that the electrode and the biography of co-planar waveguide of photodetector
Defeated line connection；
Optical coupling structure, for by photosurface of the signal of transmission optically coupling to photodetector.
In some embodiments of the invention, above-mentioned co-planar waveguide is grading structure, and it is close to one end of photodetector
Spacing between transmission line is small, and the spacing between one end transmission line away from photodetector is big.
In some embodiments of the invention, above-mentioned optical coupling structure includes V-groove substrate and at least one 45 ° of flat inclined lights
Fibre, wherein：
V-groove substrate, the V-groove with some periodic arrangements, each V-groove is used for fixed at least one 45 ° of inclined-planes
Any in optical fiber；
45 ° of sloping optical fibers, for transmitting flashlight, one of end face of 45 ° of sloping optical fibers is ellipsoid, wherein separately
One end face is with being in axially the inclined-plane of 45 ° of angles.
In some embodiments of the invention, above-mentioned optical coupling structure includes grating, one end of the grating and photodetection
The position of device is corresponding, the direction of propagation for changing flashlight, so that flashlight injects the photosurface of photodetector.
In some embodiments of the invention, above-mentioned photodetector upside-down mounting is welded in behind the surface of co-planar waveguide, use
Solder is formed as welding column or soldered ball, and welding column or the position of soldered ball are relative with the transmission line of the electrode of photodetector and co-planar waveguide
Should.
In some embodiments of the invention, the height for depending highly on optical coupling structure of above-mentioned welding column or soldered ball；Should
The width of welding column or soldered ball depends on the size and spacing of photodetector electrode.
In some embodiments of the invention, above-mentioned photodetector, for the flashlight by its photosurface is injected
Be converted to electric signal.
In some embodiments of the invention, above-mentioned photodetector includes at least one detector chip and/or at least
One detector chip array.
In some embodiments of the invention, the type of above-mentioned photodetector has PIN-type photodetector, avalanche optoelectronic
Detector and silicon-based detector
Photoelectric conversion device proposed by the present invention, has the advantages that：
1st, the present invention tips upside down on photodetector using face-down bonding technique on the surface of co-planar waveguide, and can by flip chip bonding
The transmission line of the electrode of photodetector and co-planar waveguide is attached, therefore reduced in common encapsulation process due to gold
The influence for the stray inductance that silk bonding is introduced, optimizes device performance；
2nd, optical coupling of the invention changes the direction of propagation of flashlight using 45 ° of sloping optical fibers, so that flashlight is injected
The photosurface of photodetector, and 45 ° of sloping optical fibers are fixed using the V-groove of V-groove substrate；Photodetector is detected
The flashlight that photosurface is injected, and flashlight is converted into electric signal, you can opto-electronic conversion is completed, therefore the photoelectricity of the present invention turns
Changing device small volume, it is simple in construction, the integrated level of device is improved, the integrated light-receiving mould of Large Copacity array can be applied to
Block.
Brief description of the drawings
Fig. 1 (a) is the top view for the photoelectric conversion device that one embodiment of the invention is proposed；
Fig. 1 (b) is the upward view for the photoelectric conversion device that one embodiment of the invention is proposed；
Fig. 1 (c) is the front view for the photoelectric conversion device that one embodiment of the invention is proposed；
Fig. 1 (d) is the left view for the photoelectric conversion device that one embodiment of the invention is proposed
Fig. 2 is the structural perspective for the photoelectric conversion device that one embodiment of the invention is proposed；
Fig. 3 is the application schematic diagram for the photoelectric conversion device that one embodiment of the invention is proposed.
【Description of reference numerals】
1-V type groove substrates；2- co-planar waveguides；
3-45 ° of inclined-plane lens fiber；4- welding columns；
5- photodetectors；6- shells；
7- spun golds；8- biasing circuits.
Embodiment
For the object, technical solutions and advantages of the present invention are more clearly understood, below in conjunction with specific embodiment, and reference
Accompanying drawing, the present invention is described in further detail.
The invention discloses a kind of photoelectric conversion device, including photodetector, co-planar waveguide and optical coupling structure, its
In：
Photodetector, upside-down mounting is welded in the surface of co-planar waveguide, so that the electrode and the biography of co-planar waveguide of photodetector
Defeated line connection；
Optical coupling structure, for by photosurface of the signal of transmission optically coupling to photodetector.
Above-mentioned photoelectric conversion device tips upside down on photodetector using face-down bonding technique on the surface of co-planar waveguide, and passes through
Flip chip bonding connects the transmission line of the electrode of photodetector and co-planar waveguide, thus reduce in common encapsulation process due to
The influence for the stray inductance that gold wire bonding is introduced, optimizes device performance.
In some embodiments of the invention, above-mentioned photodetector is used to detect the flashlight for injecting photosurface, and will
Flashlight is converted to electric signal, completes opto-electronic conversion.
In some embodiments of the invention, above-mentioned optical coupling structure includes V-groove substrate and at least one 45 ° of flat inclined lights
Fibre, wherein：
V-groove substrate, the V-groove with periodic arrangement, each V-groove is used for fixed at least one 45 ° of sloping optical fibers
In any；
45 ° of sloping optical fibers, for transmitting flashlight, one of end face of 45 ° of sloping optical fibers is ellipsoid, wherein another
Individual end face is with being in axially the inclined-plane of 45 ° of angles, so that flashlight injects the photosurface of photodetector.
The present embodiment changes the direction of propagation of flashlight using 45 ° of sloping optical fibers, so that flashlight injects photodetection
The photosurface of device, and 45 ° of sloping optical fibers are fixed using the V-groove of V-groove substrate；So that photoelectric conversion device has
Small volume, simple in construction, device integrated level are high, the advantages of being applied to Large Copacity array integrated Optical Receivers.
V-groove can largely adjust the left and right distribution of simple optical fiber, it is easy to realize the coupling of flashlight and 45 °
Sloping optical fiber it is same fixed.
In some embodiments of the invention, above-mentioned optical coupling structure includes grating, one end of the grating and photodetection
The position of device is corresponding, for transmitting flashlight and changing the direction of propagation of flashlight, so that flashlight injects photodetector
Photosurface.Optical grating construction has higher integrated level, is mainly used in the encapsulating structure of detector array chip.
In some embodiments of the invention, above-mentioned photodetector includes at least one detector chip and/or at least
One detector chip array, optical coupling structure includes the V-groove substrate and at least of at least one V-groove with periodic arrangement
Piece 45 ° of sloping optical fibers, each V-groove is used for any fixed at least one 45 ° of sloping optical fibers；45 ° of sloping optical fibers,
For transmitting flashlight, one of end face of 45 ° of sloping optical fibers is ellipsoid, and other in which end face is with being in axially 45 °
The inclined-plane of angle, so that flashlight injects the photosurface of photodetector；Wherein, between detector chip spacing or detector core
Spacing in chip arrays between adjacent cells is equal with the spacing between 45 ° of sloping optical fibers, and 45 ° of beveled ends of 45 ° of sloping optical fibers are with visiting
The photosurface for surveying each unit in device chip or detector chip array is corresponding.The spacing ordinary circumstance and detector of V-groove
The spacing of chip array or detector chip is consistent, and pitch difference required precision is very high, especially for detector core
Chip arrays.
In some embodiments of the invention, above-mentioned photodetector includes at least one detector chip and/or at least
One detector chip array；Above-mentioned optical coupling structure includes grating, and one end of the grating is relative with the position of photodetector
Should, the direction of propagation for changing flashlight, so that flashlight injects the photosurface of photodetector.Wherein, the cycle of grating
Match with the arrangement cycle of detector chip or the cycle of detector chip array, and grating is close to detector chip or spy
Survey the change that one end of device chip array can make the direction of propagation of flashlight produce 90 °.
In some embodiments of the invention, the use of V-groove and 45 ° of sloping optical fibers is primarily directed in multiple discrete spies
Survey the array package design of device chip；For single chip integrated detector chip array, V-groove and 45 ° of Slant Gatings can be with
Change the grating with demultiplexing function into, the cycle of grating is equal with the cycle of single chip integrated detector chip array, typically
For 250um, the space relative accuracy now required is very high, and also there is grating the direction of propagation for making flashlight to change 90 ° simultaneously
Function
In some embodiments of the invention, above-mentioned photodetector is welded in the surface of co-planar waveguide by solder upside-down mounting.
In some embodiments of the invention, after photodetector upside-down mounting is welded in the surface of co-planar waveguide, solder is formed
For welding column or soldered ball, the welding column or the position of soldered ball are corresponding with the transmission line of the electrode of photodetector and co-planar waveguide.
In some embodiments of the invention, the height for depending highly on optical coupling structure of above-mentioned welding column or soldered ball；Weldering
The width of post or soldered ball depends on the size and spacing of photodetector electrode.
In some embodiments of the invention, if spacing very little between photodetector electrode, and electrode area is limited,
Can be integrated especially for photodetector as long as ensureing that soldered ball is tangent connection with electrode surface with limited consideration soldered ball
For chip；For separation detector chip encapsulation, can use welding column, beneficial to operation and reliability is very high.
In some embodiments of the invention, the type of above-mentioned photodetector has PIN-type photodetector, avalanche optoelectronic
Detector and silicon-based detector.
In some embodiments of the invention, above-mentioned co-planar waveguide is grading structure, and it is close to one end of photodetector
Spacing between transmission line is small, and the spacing between one end transmission line away from photodetector is big.So as to realize flip chip bonding photodetection
The connection of the electrode of device and the transmission line of co-planar waveguide.
In some embodiments of the invention, a kind of photoelectric conversion device is proposed, the device includes V-groove substrate, coplanar
Waveguide, some 45 ° of sloping optical fibers, welding column, several detector chips of flip chip bonding formation.Wherein V-groove substrate is formed with
Several V-grooves of periodic arrangement, co-planar waveguide has some groups of transmission lines, and one end of 45 ° of sloping optical fibers is ellipsoid, another
Hold as 45 ° of inclined-planes.Several detector chip upside-down mountings are welded in the surface of co-planar waveguide using face-down bonding technique, and several are visited
Some groups of transmission lines of the electrode and co-planar waveguide of surveying device chip are connected respectively, so as to reduce in encapsulation process due to spun gold key
The influence of the stray inductance introduced is closed, device performance is optimized；It is oblique to some 45 ° using several V-grooves of V-groove substrate
Face optical fiber is fixed, flashlight by the ellipsoid of several 45 ° of sloping optical fibers be transferred to 45 degree of beveled ends after reflect, enter
And the photosurface of several photodetectors is incided respectively, the signal of photosurface is injected in several photodetectors detection
Light, and flashlight is changed into electric signal, so as to complete opto-electronic conversion.The body of the light path integrated electro conversion equipment of the present embodiment
Small, simple in construction, device the integrated level of product is high, can be applied to the integrated Optical Receivers of Large Copacity array.
In some embodiments of the invention, flip chip bonding welding column can be true according to the size and spacing of detector chip electrode
Determine the size of welding column, the height of welding column is determined according to the thickness and fiber size of V-groove substrate, flip chip bonding welding column can also be replaced
For the soldered ball matched with detector chip electrode, to improve welding precision.
In some embodiments of the invention, the co-planar waveguide in photoelectric conversion device is connected with shell by spun gold, is
Reduce the influence of gold wire bonding, spun gold now can be replaced gold ribbon or be replaced with many spun golds, while co-planar waveguide and pipe
Spacing between shell is the smaller the better, to ensure the length of short spun gold, improves the high speed performance of device.
Below by way of specific embodiment, photoelectric conversion device proposed by the present invention is described in detail.
Embodiment
Such as Fig. 1 (a) is to 1 (d) Suo Shi, and the present embodiment proposes a kind of integrated photoelectric conversion device in four road, including V-groove base
Plate 1, co-planar waveguide 2,4 45 ° of sloping optical fibers 3,4 detector chips 5.
Wherein, as shown in Fig. 1 (a), V-groove substrate 1 has the V-groove 11 of 4 periodic arrangements, for fixed placement 4
45 ° of sloping optical fibers 3；Co-planar waveguide 2 has the transmission line 51 of 4 groups of periodic arrangements, and it is grading structure；As shown in Fig. 1 (c), 4
Individual detector chip 5 is welded in the upper surface of co-planar waveguide 2 by the upside-down mounting of welding column 4, with the periodic arrangement on co-planar waveguide 2, and such as
Shown in Fig. 1 (d) and Fig. 2, the electrode of 4 detector chips 5 is connected with the transmission line 51 of 4 groups of periodic arrangements respectively by welding column 4；
The spacing of each transmission line in the transmission line 51 of every group of co-planar waveguide 2, it is small in one end spacing close to detector chip 5, remote
One end spacing from detector chip 5 is big, and the part after away from the certain distance of detector chip 5, and constant gap is constant；As schemed
1 (c), one end of 4 45 ° of sloping optical fibers 3 is ellipsoid 31, and the other end is 45 ° of inclined-planes 32, and such as Fig. 1 (a) and Fig. 1 (b) institutes
Show, 45 ° of inclined-planes 32 of 4 45 ° of sloping optical fibers 3 are located at the lower section of 4 detector chips 5 respectively, for will be propagated in optical fiber
After the direction of propagation of flashlight is rotated by 90 °, the photosurface of 4 detector chips 5 is injected respectively.Wherein, the V-groove of periodic arrangement
11st, the cycle of the transmission line 51 of periodic arrangement and the detector chip of periodic arrangement is impartial.
As shown in figure 3, application of the photoelectric conversion device in the integrated Optical Receivers in four roads proposed for the present embodiment, letter
Number light be divided into 4 tunnels through optical demultiplexer after being transmitted through long-distance after through being entered respectively by the ellipsoid 31 of 4 45 ° of sloping optical fibers 3
Enter in 4 45 ° of sloping optical fibers 3, the ellipsoid 31 in 45 ° of sloping optical fibers 3 improves the coupling efficiency of light；Flashlight is passed through optical fiber
Reflected after broadcasting on 45 ° of inclined-planes of 4 45 ° of sloping optical fibers 3, the direction of propagation of optical signal is folded upward at 90 ° by horizontal direction
It is changed into vertical direction, so as to just inject respectively on the photosurface of 4 detector chips 5 of back-off, respectively by 4 detector cores
Piece is detected, and the flashlight for entering detector chip is changed into electric signal, and electric signal passes through 4 groups of transmission lines of co-planar waveguide 2
21 transmit to shell 6.Connected between co-planar waveguide 2 and shell 6 by spun gold 7；Because detector chip is generally operational in reverse-biased shape
Under state, therefore, as shown in figure 3, adding reversed bias voltage to 4 detector chips 5 by biasing circuit 8, it is set to be operated in normally
Working condition.
It should be noted that V-groove substrate 1 in the present embodiment and 45 ° of sloping optical fibers 3 can be by can be by the propagation of flashlight
The grating that direction changes 90 ° is substituted, and the wherein distribution of grating and the distribution of detector chip is corresponded.
Particular embodiments described above, has been carried out further in detail to the purpose of the present invention, technical scheme and beneficial effect
Describe in detail bright, it should be understood that the foregoing is only the present invention specific embodiment, be not intended to limit the invention, it is all
Within the spirit and principles in the present invention, any modification, equivalent substitution and improvements done etc. should be included in the protection of the present invention
Within the scope of.
Claims (9)
1. a kind of photoelectric conversion device, including photodetector, co-planar waveguide and optical coupling structure, wherein：
Photodetector, upside-down mounting is welded in the surface of the co-planar waveguide so that the electrode of the photodetector with it is described coplanar
The transmission line connection of waveguide；
Optical coupling structure, for by photosurface of the signal of transmission optically coupling to the photodetector.
2. photoelectric conversion device as claimed in claim 1, wherein, the co-planar waveguide is grading structure, and it is close to the light
Spacing between transmission line described in one end of electric explorer is small, the spacing between transmission line described in one end away from the photodetector
Greatly.
3. photoelectric conversion device as claimed in claim 1, wherein, the optical coupling structure includes V-groove substrate and at least one
45 ° of sloping optical fibers of root, wherein：
V-groove substrate, the V-groove with some periodic arrangements, each described V-groove is used for described in fixation at least one 45 °
Any in sloping optical fiber；
45 ° of sloping optical fibers, for transmitting the flashlight, one of end face of 45 ° of sloping optical fibers is ellipsoid, wherein
Another end face is with being in axially the inclined-plane of 45 ° of angles.
4. photoelectric conversion device as claimed in claim 1, wherein, the optical coupling structure includes grating, the one of the grating
, the direction of propagation for change the flashlight corresponding with the position of the photodetector is held, so that the flashlight is penetrated
Enter the photosurface of the photodetector.
5. photoelectric conversion device as claimed in claim 1, wherein, it is welded in the co-planar waveguide in the photodetector upside-down mounting
Surface after, the solder of use is formed as welding column or soldered ball, the position of the welding column or soldered ball and the electricity of the photodetector
Pole is corresponding with the transmission line of the co-planar waveguide.
6. photoelectric conversion device as claimed in claim 5, wherein, the welding column or soldered ball depend highly on the optical coupling
The height of structure；The width of the welding column or soldered ball depends on the size and spacing of the photodetector electrode.
7. photoelectric conversion device as claimed in claim 1, wherein, the photodetector, for its photosurface will to be injected
The flashlight is converted to electric signal.
8. photoelectric conversion device as claimed in claim 1, wherein, the photodetector includes at least one detector chip
And/or at least one detector chip array.
9. photoelectric conversion device as claimed in claim 1, wherein, the type of the photodetector has PIN-type photodetection
Device, avalanche photodetector and silicon-based detector.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710381633.5A CN107065085A (en) | 2017-05-25 | 2017-05-25 | Photoelectric conversion device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710381633.5A CN107065085A (en) | 2017-05-25 | 2017-05-25 | Photoelectric conversion device |
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|---|---|
| CN107065085A true CN107065085A (en) | 2017-08-18 |
Family
ID=59611179
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|---|---|---|---|
| CN201710381633.5A Pending CN107065085A (en) | 2017-05-25 | 2017-05-25 | Photoelectric conversion device |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108540234A (en) * | 2018-04-12 | 2018-09-14 | 中国科学院半导体研究所 | Detector integrated array structure and detector receiving module |
| CN111679179A (en) * | 2020-06-15 | 2020-09-18 | 中国科学院半导体研究所 | Semi-packaged detector chip testing device and using method |
| CN114337859A (en) * | 2022-01-05 | 2022-04-12 | 中国电子科技集团公司第四十四研究所 | Gain-adjustable integrated detection amplification module |
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| CN111679179A (en) * | 2020-06-15 | 2020-09-18 | 中国科学院半导体研究所 | Semi-packaged detector chip testing device and using method |
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