CN107045243B - Electrochromic structure and forming method thereof - Google Patents
Electrochromic structure and forming method thereof Download PDFInfo
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- CN107045243B CN107045243B CN201610084079.XA CN201610084079A CN107045243B CN 107045243 B CN107045243 B CN 107045243B CN 201610084079 A CN201610084079 A CN 201610084079A CN 107045243 B CN107045243 B CN 107045243B
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/15—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on an electrochromic effect
- G02F1/153—Constructional details
- G02F1/157—Structural association of cells with optical devices, e.g. reflectors or illuminating devices
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/15—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on an electrochromic effect
- G02F1/153—Constructional details
- G02F1/155—Electrodes
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Abstract
An electrochromic structure and a method of forming the same, wherein the electrochromic structure comprises: a substrate; a first conductive layer on at least one of the first and second sides of the substrate; the color-changing functional layer is positioned on the surface of the first conductive layer; the second conducting layer is positioned on the surface of the color-changing functional layer and comprises a first isolation region and a first conducting region which are mutually electrically isolated; the first electrode is positioned in the first isolation area of the second conducting layer and the electrochromic layer and is electrically connected with the first conducting layer; the second electrode is positioned on the surface of the first conducting area of the second conducting layer and is electrically connected with the first conducting area of the second conducting layer; the first shading layer is used for shading the first isolation area and is used for shading light. According to the invention, the first light shielding layer for shielding light is arranged to shield the first isolation region, so that light leakage of the first isolation region can be shielded after the electrochromic glass is discolored, and the color change uniformity of the electrochromic glass can be improved, and the performance of the electrochromic glass can be improved.
Description
Technical Field
The invention relates to the technical field of glass, in particular to an electrochromic structure and a forming method thereof.
Background
The electrochromic is that under the action of an external electric field, the characteristics of the material, such as reflectivity, transmissivity, absorptivity and the like, can be reversibly changed according to the magnitude and polarity of the electric field. The electrochromic structure is arranged on the surface of the glass to form the electrochromic glass, and the light transmission performance of the glass can be controlled through voltage control.
According to the american green building council report, the energy consumption of buildings accounts for nearly 40% of the overall energy consumption: the heat lost by the window with poor isolation performance accounts for 10 to 30 percent of the heat loss of the building in winter; and the light penetrating the window into the building in summer increases the energy required for indoor refrigeration. It is estimated that the energy loss due to architectural glazing costs about $ 200 billion per year in the united states.
The electrochromic glass can control the light transmission amount and the glare amount of the glass, optimize the light transmission amount of the glass and the heat of the glass, keep the indoor conditions comfortable, and further reduce the energy consumption for maintaining the indoor temperature of a building. Therefore, with the rapid development of material technology, electrochromic glass has been gradually applied to the fields of automobile anti-glare reflectors, automobile skylights, high-speed railway windows, airplane windows, curtain wall glass of high-grade buildings and the like. And with the gradual reduction of the comprehensive use cost, the electrochromic glass can gradually replace Low-e glass, and is widely applied to energy-saving and environment-friendly intelligent buildings.
However, the electrochromic glass in the prior art often has the problem of light leakage after pressurization and color change.
Disclosure of Invention
The invention solves the problem of providing an electrochromic structure and a forming method thereof, so as to improve the performance of electrochromic glass.
To solve the above problems, the present invention provides an electrochromic structure comprising:
a substrate including a first face and a second face opposite to the first face;
the first conducting layer is positioned on the first surface of the substrate;
the color-changing functional layer is positioned on the surface of the first conductive layer;
the second conducting layer is positioned on the surface of the color-changing functional layer and is divided into a first isolation area and a first conducting area which are mutually and electrically isolated;
the first electrode is positioned in the first isolation region of the second conducting layer and penetrates through the electrochromic layer to be electrically connected with the first conducting layer;
the second electrode is positioned on the surface of the first conducting area of the second conducting layer and is electrically connected with the second conducting layer of the first conducting area;
the first light shielding layer is used for shielding the first isolation area.
Optionally, the first light shielding layer covers the first electrode and the second conductive layer of the first isolation region.
Optionally, the first light shielding layer covers a portion of the second surface of the substrate, where the position corresponds to the first isolation region.
Optionally, a projected area of the first light shielding layer on the substrate surface is larger than a projected area of the first isolation region on the substrate surface.
Optionally, the electrochromic structure further includes: a first trench penetrating the second conductive layer, the first trench dividing the second conductive layer into a first isolation region and a first conductive region;
the first light shielding layer also shields the first groove.
Optionally, the first light shielding layer covers the first electrode and the second conductive layer of the first isolation region, and fills the first trench.
Optionally, the first light shielding layer covers a portion of the second surface of the substrate, the portion corresponding to the first isolation region and the first trench.
Optionally, the material of the first light shielding layer includes a metal.
Optionally, the first conductive layer includes a second isolation region and a second conductive region electrically isolated from each other;
the electrochromic structure further comprises: and the second light shielding layer is used for shielding the second isolation area.
Optionally, the position of the second electrode corresponds to the position of the second isolation region, and the second light shielding layer covers the second electrode and the portion, corresponding to the position of the second isolation region, of the second conductive layer covering the first conductive region.
Optionally, the second light shielding layer covers a portion of the second surface of the substrate, the portion corresponding to the second isolation region.
Optionally, a projected area of the second light shielding layer on the substrate surface is larger than a projected area of the second isolation region on the substrate surface.
Optionally, the electrochromic structure further includes: a second trench penetrating the first conductive layer, the second trench dividing the first conductive layer into a second isolation region and a second conductive region;
the second light shielding layer also shields the second groove.
Optionally, the position of the second electrode corresponds to the position of the second isolation region, and the second light shielding layer covers the second electrode and the portion, corresponding to the position of the second isolation region and the second trench, of the second conductive layer covering the first conductive region.
Optionally, the second light shielding layer covers a portion of the second surface of the substrate, the portion corresponding to the second isolation region and the second trench.
Optionally, the width ranges of the first isolation region and the second isolation region are 1 micron to 500 microns, and the width ranges of the first conductive region and the second conductive region are 1 cm to 500 cm.
Optionally, the substrate comprises a light transmissive substrate.
Optionally, the electrochromic structure further comprises a barrier layer between the substrate and the first conductive layer.
Optionally, the material of the first conductive layer and the second conductive layer includes a transparent conductive oxide.
Correspondingly, the invention also provides a forming method of the electrochromic structure, which comprises the following steps:
providing a substrate comprising a first side and a second side opposite the first side;
forming a first conductive layer on a first side of the substrate;
forming a color-changing functional layer positioned on the surface of the first conductive layer;
forming a second conductive layer on the surface of the color-changing functional layer, wherein the second conductive layer comprises a first isolation region and a first conductive region which are electrically isolated from each other;
forming a first electrode in a first isolation region of a second conductive layer and electrically connected to the first conductive layer through the electrochromic layer;
forming a second electrode on the surface of the first conductive area of the second conductive layer, wherein the second electrode is electrically connected with the first conductive area of the second conductive layer;
and forming a first light shielding layer for shielding the first isolation region.
Optionally, the first light shielding layer covers the first electrode and the second conductive layer of the first isolation region.
Optionally, the first light shielding layer is formed on the second surface of the substrate at a position corresponding to the first isolation region.
Optionally, a projected area of the first light shielding layer on the substrate surface is larger than a projected area of the first isolation region on the substrate surface.
Optionally, the forming method further includes: forming a first trench penetrating the second conductive layer after forming the second conductive layer and before forming the first electrode, the first trench dividing the second conductive layer into a first isolation region and a first conductive region;
the first light shielding layer also shields the first groove.
Optionally, the first light shielding layer covers the first electrode and the second conductive layer of the first isolation region, and fills the first trench.
Optionally, the method further includes: and forming the first light shielding layer on the second surface of the substrate at the position corresponding to the first isolation region and the first groove.
Optionally, the first conductive layer includes a second isolation region and a second conductive region electrically isolated from each other;
the forming method further includes: and forming a second light shielding layer for shielding the second isolation region.
Optionally, the position of the second electrode corresponds to the position of the second isolation region, and the second light shielding layer covers the second electrode and a portion, corresponding to the second isolation region, of the second conductive layer covering the first conductive region.
Optionally, the second light-shielding layer is formed on the second surface of the substrate at a position corresponding to the second isolation region.
Optionally, a projected area of the second light shielding layer on the substrate surface is larger than a projected area of the second isolation region on the substrate surface.
Optionally, the forming method further includes: after forming the first conductive layer and after forming the color-changing functional layer, forming a second trench penetrating the first conductive layer, the second trench dividing the first conductive layer into a second isolation region and a second conductive region;
the second light shielding layer also shields the second groove.
Optionally, the position of the second electrode corresponds to the position of the second isolation region, and the second light shielding layer covers the second electrode and the portion, corresponding to the second isolation region and the second trench, of the second conductive layer covering the first conductive region.
Optionally, the second light-shielding layer is formed on the second surface of the substrate at a position corresponding to the second isolation region and the second trench.
Optionally, the first light-shielding layer or the second light-shielding layer is formed by screen printing, vacuum thermal evaporation coating, vacuum magnetron sputtering coating, vacuum ion source coating, and inkjet printing.
Compared with the prior art, the technical scheme of the invention has the following advantages:
according to the invention, the first light shielding layer for shielding light is arranged to shield the first isolation region, so that light leakage of the first isolation region can be shielded after the electrochromic glass is discolored, and the color change uniformity of the electrochromic glass can be improved, and the performance of the electrochromic glass can be improved.
In an alternative of the present invention, the first conductive layer further includes a second isolation region and a second conductive region electrically isolated from each other, so that the electrochromic glass further includes a second light shielding layer shielding the second isolation region to shield light leakage from the second isolation region, which is beneficial to improving color change uniformity of the electrochromic glass, thereby improving electrochromic performance.
In an alternative of the present invention, the projection areas of the first light shielding layer and the second light shielding layer on the surface of the substrate are respectively larger than the projection areas of the first isolation region and the second isolation region on the surface of the substrate, so that light leakage caused by light diffraction can be reduced, and the light shielding performance of the electrochromic glass can be further improved.
Drawings
FIG. 1 is a schematic cross-sectional view of an electrochromic structure;
FIG. 2 is a schematic flow chart diagram illustrating one embodiment of a method for forming an electrochromic structure according to the present invention;
fig. 3 to 15 are schematic structural views of intermediate structures at various steps of an embodiment of a method for forming an electrochromic structure according to the present invention;
fig. 16 is a schematic cross-sectional structural view of another embodiment of the electrochromic structure forming method of the invention;
Detailed Description
As can be seen from the background art, the electrochromic glass in the prior art has a problem of light leakage. The structure of the electrochromic structure in the electrochromic glass in the prior art is combined to analyze the reason of the light leakage problem:
referring to fig. 1, a schematic cross-sectional structure of an electrochromic structure is shown.
As shown in fig. 1, the electrochromic glass includes a substrate 10, and a first conductive layer 11, an electrochromic layer 12 and a second conductive layer 13 which are sequentially located on the surface of the substrate 10; a first electrode 14a sequentially penetrating through the second conductive layer 13 and the electrochromic layer 12 and a second electrode 14b positioned on the surface of the second conductive layer 13 are electrically connected with the first conductive layer 11 and the second conductive layer 13, respectively, and voltage signals are applied to the first conductive layer 11 and the second conductive layer 13, so that an electric field is formed between the first conductive layer 11 and the second conductive layer 13 to control the color of the electrochromic layer 12.
In order to avoid a short circuit between the first electrode 14a and the second electrode 14b, the second conductive layer 13 is divided into a first isolation region 13i and a first conductive region 13t, which are electrically isolated from each other, the first electrode 14a is located in the first isolation region 13i, and the second electrode 14b is located in the first conductive region 13 t.
Since the first electrode 14a is located in the first isolation region 13i, the potentials between the second conductive layer 13 of the first isolation region 13i and the corresponding region of the first conductive layer 11 are equal, and an electric field cannot be formed, so that when the color is changed by pressurization, the color of the electrochromic layer 12 between the second conductive layer 13 of the first isolation region 13i and the corresponding region of the first conductive layer 11 is not changed, and light leakage occurs.
The following detailed description of specific embodiments of the invention refers to the accompanying drawings.
Fig. 2 is a schematic flow chart of an embodiment of a method for forming an electrochromic structure according to the present invention.
Fig. 3 to 15 are schematic structural diagrams of intermediate structures in various steps of an embodiment of a method for forming an electrochromic structure according to the present invention.
Referring to step S100 in fig. 2, in combination with fig. 3, first, a substrate 100 is provided, where the substrate 100 includes a first side and a second side opposite to the first side.
The substrate is used to provide a physical support platform. The substrate 100 may be a flexible substrate or a rigid substrate. The substrate 100 may be a light-transmissive material. In some embodiments, the substrate 100 is glass.
In some embodiments, the glass can be directly laminated on the formed electrochromic structure to form the electrochromic glass, so that the structure of the electrochromic glass can be simplified, and the weight of the electrochromic glass can be reduced.
The number of the electrochromic structures is not limited, and in other embodiments, the electrochromic structures can be formed by clamping the electrochromic structures between two pieces of glass, so that the requirements on a process machine are reduced, and the manufacturing cost is reduced.
Referring to step S200 in fig. 2, and with continued reference to fig. 3, a first conductive layer 110 on the first side of the substrate 100 is formed.
The first conductive layer 110 is formed on a first surface of the substrate 100, and the first conductive layer 110 is used for applying a voltage to form an electric field. The material of the first Conductive layer 110 includes Transparent Conductive Oxide (TCO). Specifically, the first conductive layer 110 may be one or more of Indium Tin Oxide (ITO), zinc tin oxide (IZO), zinc aluminum oxide (AZO), fluorine-doped tin oxide (FTO), gallium-doped tin oxide (GTO), and the like; the transparent nitride which can be conductive comprises one or more of materials such as titanium nitride, titanium nitride oxide, tantalum nitride, tantalum oxynitride and the like; or a transparent conductive graphene material; but may also be other transparent metal or alloy materials. The thickness of the first conductive layer 110 ranges from 10 nm to 1000 nm. Optionally, in some embodiments, the thickness of the first conductive layer 110 ranges from 100 nm to 600 nm.
It should be noted that, in order to avoid impurity ions from diffusing into the first conductive layer 110 and affecting the conductive performance of the first conductive layer 110, the electrochromic structure further includes a barrier layer 101 located between the substrate 100 and the first conductive layer 110, so the forming method may further include: before forming the first conductive layer 110, a barrier layer 101 covering the surface of the substrate 100 is formed.
In some embodiments, the substrate 100 is soda glass, and in order to prevent sodium ions in the soda glass from diffusing into the first conductive layer 110 and lowering the conductivity of the first conductive layer 110, the barrier layer 101 is a sodium ion barrier layer of one or more of silicon dioxide, silicon nitride, silicon oxynitride, aluminum oxide, and the like.
Referring to fig. 4 to 6, a color-changing functional layer 120 is formed on the surface of the first conductive layer 110.
It should be noted that, in order to improve the electrical isolation between the first conductive layer 110 and the second electrode formed subsequently and avoid the problem of electric leakage or short circuit, the first conductive layer 110 includes a second isolation region and a second conductive region that are electrically isolated from each other, the number of the second isolation region is one or more, and the number of the second conductive region is one or more.
In some embodiments of the present invention, in order to simplify a device structure and reduce a process difficulty, the second isolation region and the second conductive region are isolated by a second trench. Thus, referring to step S210 in fig. 2, after the first conductive layer is formed, a second trench penetrating the first conductive layer is formed, the second trench dividing the first conductive layer into a second isolation region and a second conductive region.
Specifically, reference is made to fig. 4 and 5 in combination, wherein fig. 4 shows a schematic top view of an intermediate structure of the electrochromic structure, and fig. 5 is a cross-sectional view along line AA in fig. 4. After forming the first conductive layer 110, the forming method further includes: a lower trench 111 is formed through the first conductive layer 110, the lower trench 111 dividing the first conductive layer 110 into a lower isolation region 110i and a lower conductive region 110 t. The lower trench 111 constitutes the second trench, the lower isolation region 110i constitutes the second isolation region, and the lower conductive region 110t constitutes the second conductive region.
The width range of the lower isolation region 110i is 1 micrometer to 500 micrometers, and the width range of the lower conduction region 110t is 1 centimeter to 500 centimeters. In order to improve the color changing uniformity and the color changing speed of the electrochromic structure, optionally, the width of the lower isolation region 110i ranges from 5 micrometers to 50 micrometers, and the width of the lower conductive region 110t ranges from 5 centimeters to 50 centimeters.
The lower trench 111 may extend along a zigzag shape, such that the plurality of lower isolation regions 110i are connected to each other to form a comb shape, the plurality of lower conductive regions 110t are connected to each other to form a comb shape, and comb teeth of the comb shape formed by the plurality of lower conductive regions 110t and comb teeth of the comb shape formed by the plurality of lower isolation regions 110i compensate each other. The width (width of comb teeth) of the lower isolation region 110i ranges from 5 cm to 50 cm, the lower conduction region 110t is arranged between adjacent comb teeth, and the width of the lower conduction region 110t ranges from 5 cm to 50 cm. The width of the lower trench 111 ranges from 1 micrometer to 50 micrometers. Optionally, the width of the lower trench 111 ranges from 2 micrometers to 10 micrometers to improve the insulation between the lower isolation region 110i and the lower conductive region 110 t.
The lower trench 111 may be formed in the first conductive layer 110 by means of laser scribing. Specifically, the lower trench 111 may be formed through a visible light laser scribing process or an infrared light laser scribing process. In addition, the laser scribing process can adopt constant power output or pulse power output. Optionally, in some embodiments, the lower trench 111 is formed by a pulsed laser scribing method, where a pulse frequency range is 5KHz to 500KHz, and a laser power range is 0.1 watt to 10 watts. In some embodiments, the laser power ranges from 0.5 watts to 5 watts. It should be noted that the method of forming the lower trench 111 by laser scribing is only an example, and the specific method of forming the lower trench 111 is not limited in the present invention.
It should be noted that, referring to step S211 in fig. 2, in some embodiments, after the step of forming the lower groove 111 and before the step of forming the discoloring functional layer 120, the forming method further includes: dust residues are removed to obtain a clean process surface.
Then, in step S300 in fig. 2, with reference to fig. 6, a color-changing functional layer 120 on the surface of the first conductive layer 110 is formed.
It is noted that, in some embodiments, after the step of forming the lower trench 111 and before the step of forming the discoloring functional layer 120, the forming method further includes: and removing the dust residue to remove the dust residue generated in the process of forming the lower groove 111 and provide a clean surface for the subsequent process steps.
The color-changing functional layer 120 is for changing color under voltage control. The color-changing functional layer 120 includes one or more functional layers, and the step of forming the color-changing functional layer 120 includes: one or more functional layers are formed, including an electrochromic layer, an ion storage layer, and an ion conducting layer between the electrochromic layer and the ion storage layer.
Wherein the electrochromic layer is used for oxidation-reduction reaction under the action of an external electric field, changes color, and can be cathode electrochromic metal oxide, i.e. metal oxide with changed color after ion implantation, such as tungsten oxide (WO)x,2.7<x<3) Titanium oxide (TiO)2) Vanadium oxide (V)2O5) Niobium oxide (Nb)2O5) Molybdenum oxide (MoO)3) Tantalum oxide (Ta)2O5) One or more of the following materials; may be lithium,Sodium, potassium, vanadium or titanium doped cathodic electrochromic metal oxides. Specifically, the thickness of the electrochromic layer ranges from 10 nanometers to 1000 nanometers. Optionally, the thickness of the electrochromic layer ranges from 300 nm to 600 nm.
The ion-conducting layer is used for transporting ions and can be Li2O、Li2O2、Li3N、LiI、LiF、SiO2、Al2O3、Nb2O3、LiTaO3、LiNbO3、La2TiO7、Li2WO4Oxygen-enriched tungsten oxide (WO)x,3<x<3.5)、HWO3、ZrO2、HfO2、LaTiO3、SrTiO3、BaTiO3、LiPO3And the like. Specifically, the thickness range of the ion conducting layer is 10 nanometers to 300 nanometers. Optionally, the thickness of the ion conducting layer ranges from 20 nm to 150 nm.
The ion storage layer is used for storing corresponding ions with electric property, keeps charge balance of the whole system, and can be an anode electrochromic metal oxide, namely a metal oxide with color changed after ions are separated out, such as vanadium oxide (V)2O5) Chromium oxide (Cr)2O3) Manganese oxide (Mn)2O3) Iron oxide (Fe)2O3) Cobalt oxide (Co)2O3) Nickel oxide (Ni)2O3) Iridium oxide (IrO)2) One or more of nickel oxide tungsten, nickel oxide vanadium, nickel oxide titanium, nickel oxide niobium, nickel oxide molybdenum, nickel oxide tantalum and the like; or mixed metal oxide LixNiyMzOaWherein 0 is<x<10,0<y<1,0<z<10,(0.5x+1+0.5y+z)<a<(0.5x +1+0.5Y +3.5z), wherein M may be a metal element such as Al, Cr, Zr, W, V, Nb, Hf, Y, Mn, etc. Specifically, the thickness range of the ion storage layer is 10 nanometers to 1000 nanometers. Optionally, the thickness of the ion storage layer ranges from 100 nm to 300 nm.
In addition, the step of forming the functional layer according to the embodiment of the present invention includes: sequentially forming an electrochromic layer, an ion conductive layer, and an ion storage layer in a direction away from the substrate 100; or an ion storage layer, an ion conductive layer, and an electrochromic layer are sequentially formed in a direction away from the substrate 100. Specifically, the functional layer may be formed by a film deposition process such as chemical vapor deposition, physical vapor deposition, and atomic layer deposition.
It should be noted that the color-changing functional layer 120 is also filled in the lower trench 111.
Referring to step S400 in fig. 2, and referring to fig. 7 in combination, a second conductive layer 130 is formed on the surface of the color-changing functional layer 120.
The second conductive layer 130 is used for loading a voltage to form an electric field. The material of the second Conductive layer 130 also includes Transparent Conductive Oxide (TCO). Specifically, the second conductive layer 130 may be one or more of Indium Tin Oxide (ITO), zinc tin oxide (IZO), zinc aluminum oxide (AZO), fluorine-doped tin oxide (FTO), gallium-doped tin oxide (GTO), and the like; the transparent nitride which can be conductive comprises one or more of materials such as titanium nitride, titanium nitride oxide, tantalum nitride, tantalum oxynitride and the like; or a transparent conductive graphene material; but may also be other transparent metal or alloy materials. The thickness of the second conductive layer 130 ranges from 10 nm to 1000 nm. Optionally, in some embodiments, the thickness of the second conductive layer 130 ranges from 100 nm to 600 nm. Specifically, the second conductive layer 130 may be formed by a film deposition process such as chemical vapor deposition, physical vapor deposition, and atomic layer deposition.
The second conducting layer comprises a first isolation region and a first conducting region which are mutually and electrically isolated, the number of the first isolation region is one or more, and the number of the first conducting region is one or more. In some embodiments of the present invention, the first isolation region and the second conductive layer of the first conductive region are electrically isolated by a first trench. Specifically, referring to step S410 in fig. 2, after forming the second conductive layer, a first trench penetrating the second conductive layer is formed, and the first trench divides the second conductive layer into a first isolation region and a first conductive region.
In particular, with combined reference to fig. 8 and 9, fig. 8 shows a schematic top view of the electrochromic structure intermediate structure, and fig. 9 is a cross-sectional view along line BB of fig. 8. After forming the second conductive layer 130, the forming method further includes: an upper trench 132 is formed through the second conductive layer 130, the upper trench 132 dividing the second conductive layer 130 into an upper isolation region 130i and an upper conductive region 130 t. The upper trench 132 constitutes the first trench, the upper isolation region 110i constitutes the first isolation region, and the upper conductive region 130t constitutes the first conductive region.
The upper trench 132 may extend in a zigzag shape, a plurality of upper isolation regions 130i formed in this way are communicated with each other to form a comb shape, a plurality of upper conductive regions 130t are communicated with each other to form a comb shape, comb teeth of the comb shape formed by the plurality of upper conductive regions 130t and comb teeth of the comb shape formed by the plurality of upper isolation regions 130i compensate each other, a width of the upper isolation region 130i (a width of comb teeth of the comb) ranges from 5 micrometers to 50 micrometers, the upper conductive regions 130t are formed between adjacent comb teeth, and a width of the upper conductive regions 130t ranges from 5 centimeters to 50 centimeters.
It should be noted that, in order to avoid the circuit problems such as leakage and short circuit, the projections of the upper isolation region 130i and the lower isolation region 110i on the surface of the substrate 100 are staggered, that is, the projections of the upper isolation region 130i and the lower isolation region 110i on the surface of the substrate 100 do not overlap.
The width of the upper trench 132 ranges from 1 micron to 50 microns. Optionally, the width of the upper trench 132 ranges from 2 micrometers to 10 micrometers to improve the insulation between the upper isolation region 130i and the upper conductive region 130 t.
The upper trench 132 may be formed in the second conductive layer 130 by laser scribing. Specifically, the upper trench 132 may be formed through a visible light laser scribing process or an infrared light laser scribing process. In addition, the laser scribing process can adopt constant power output or pulse power output. Optionally, in some embodiments, the upper trench 132 is formed by a pulsed laser scribing method, where the pulse frequency range is 5KHz to 500KHz, and the laser power range is 0.1 w to 10 w. In some embodiments, the laser power ranges from 0.5 watts to 5 watts. It should be noted that the method of forming the upper trench 132 by laser scribing is only an example, and the specific method of forming the upper trench 132 is not limited in the present invention.
It should be noted that, referring to step S411 in fig. 2, after the step of forming the upper trench 132, the forming method may further include cleaning dust residues, so as to improve the manufacturing yield of the electrochromic structure.
Fig. 10 to 13 are schematic views showing intermediate structures of forming a first electrode in a first isolation region of a second conductive layer and electrically connecting to the first conductive layer through the electrochromic layer and forming a second electrode on a surface of a first conductive region of the second conductive layer and electrically connecting to the first conductive region of the second conductive layer, wherein fig. 10 and 12 are schematic views from above, fig. 11 is a schematic view showing a cross-sectional structure taken along CC in fig. 10, and fig. 13 is a schematic view showing a cross-sectional structure taken along DD in fig. 12.
Specifically, referring to step S510 in fig. 2, and referring to fig. 10 and 11 in combination, a third trench 133 is first formed to sequentially penetrate through the second conductive layer 130 and the color-changing functional layer 120.
Specifically, the third trench 133 is located in the second conductive layer 130 of the upper isolation region 130i, and passes through the electrochromic layer 120, and the bottom of the third trench exposes the first conductive layer 110. The width of the third trench 133 ranges from 1 micrometer to 50 micrometers. In order to reduce the process difficulty and improve the manufacturing yield, optionally, the width of the third trench 133 is in a range from 2 micrometers to 10 micrometers.
The third groove 133 may be formed by laser scribing. Specifically, the third trench 133 may be formed through a visible light laser scribing process or an infrared light laser scribing process. In addition, the laser scribing process can adopt constant power output or pulse power output. Optionally, in some embodiments, the third trench 133 is formed by a pulsed laser scribing method, where the pulse frequency range is 5KHz to 500KHz, and the laser power range is 0.1 watt to 10 watts. In some embodiments, the laser power ranges from 0.5 watts to 5 watts. It should be noted that the method of forming the third trench 133 by laser scribing is only an example, and the specific method of forming the third trench 133 is not limited in the present invention.
It should be noted that, referring to step S511 in fig. 2, after the step of forming the third trench 133, the forming method may further include cleaning dust residues to improve the manufacturing yield of the electrochromic structure.
Referring to step S520 in fig. 2, a first electrode is formed in the first isolation region of the second conductive layer and electrically connected to the first conductive layer through the electrochromic layer; and forming a second electrode on the surface of the first conductive area of the second conductive layer, wherein the second electrode is electrically connected with the first conductive area of the second conductive layer.
Specifically, referring to fig. 12 and 13 in combination, after the third trench 133 is formed, a conductive material is filled into the third trench 133 to form the first electrode 141, where the first electrode 141 is located in the upper isolation region 130i and is electrically connected to the first conductive layer 110 of the lower conductive region 110t through the color-changing functional layer 120; the second electrode 142 is located on the surface of the conductive region 130t on the second conductive layer 130, and is electrically connected to the second conductive layer 130 of the upper conductive region 130 t.
The first electrode 141 and the second electrode 142 are used for applying voltage signals to the first conductive layer 110 and the second conductive layer 130, respectively, so that an electric field is formed between the first conductive layer 110 and the second conductive layer 130, thereby controlling the color of the color-changing functional layer 120.
The electrical isolation between the upper isolation region 130i and the upper conduction region 130t realizes the electrical isolation between the first electrode 141 and the second electrode 142, so that both the first electrode 141 and the second electrode 142 can be positioned on the surface of the second conducting layer 130, and the first electrode 141 and the second electrode 142 can be uniformly distributed on the surface of the electrochromic structure, thereby improving the uniformity of an electric field between the first conducting layer 110 and the second conducting layer 130, improving the color change uniformity of the color change functional layer 120, improving the problem of slow color change speed of the electrochromic structure, further being beneficial to enlarging the area of the electrochromic glass, and enabling the color change of the large-area electrochromic glass to be faster and more uniform.
Meanwhile, the electrical isolation between the lower isolation region 110i and the lower conduction region 110t can improve the electrical isolation between the first electrode 141 and the first conducting layer 110 of the lower isolation region 110i, reduce the possibility of the occurrence of circuit problems such as electric leakage, short circuit and the like, improve the yield of the electrochromic structure, improve the performance of the electrochromic structure and prolong the service life of the electrochromic structure.
In addition, the second electrode 142 and the lower isolation region 110i are located corresponding to each other, and the lower isolation region 110i is isolated from the lower conductive region 110t, so that the electrical isolation can be further improved, and the risk of breakdown can be reduced.
The material of the first electrode 141 and the second electrode 142 may be metal. The first electrode 141 or the second electrode 142 may be formed by screen printing, vacuum thermal evaporation coating, vacuum magnetron sputtering coating, vacuum ion source coating, inkjet printing, or the like.
In order to simplify the device structure and improve the manufacturing yield, in some embodiments of the present invention, the first electrode 141 may be formed parallel to the upper trench 132, and the second electrode 142 may be formed parallel to the lower trench 111. In addition, the first electrode 141 and the second electrode 142 may be parallel to each other.
When the number of the first electrodes 141 is greater than 1, the first electrodes 141 may be parallel to each other; when the number of the second electrodes 142 is greater than 1, the second electrodes 142 may be parallel to each other.
In addition, in order to improve the uniformity of the electric field between the first electrode 141 and the second electrode 142, the second electrode 142 and the first electrode 141 are arranged in a crossed manner, that is, when the electrochromic structure includes a plurality of first electrodes 141 or a plurality of second electrodes 142, the first electrodes 141 are uniformly distributed between the adjacent second electrodes 142, or the second electrodes 142 are uniformly distributed between the adjacent first electrodes 141.
In the example shown in fig. 12, the number of the first electrodes 141 is 2, and the number of the second electrodes 142 is 3. A first electrode 141 is arranged between the adjacent second electrodes 142, and the distances from the first electrode 141 to the adjacent second electrodes 142 are equal; a second electrode 142 is disposed between adjacent first electrodes 141, and the distances from the second electrode 142 to the adjacent first electrodes 141 are equal.
In other implementations, the number of electrodes may be arranged according to the area size of the actual electrochromic structure. In some embodiments, a pair of the first electrode and the second electrode may be provided within a certain range. That is, in the above-mentioned embodiment, the first conductive layer and the second conductive layer may be divided into a plurality of isolation regions and a plurality of conductive regions, and actually, if the area is not large, they may be provided as only one, that is, only 1 pair of the first electrode and the second electrode, respectively, but the first electrode and the second electrode are located on one side of the electrochromic layer. In some embodiments, the first conductive layer may not even be isolated, and only the second conductive layer is divided into a plurality of isolation regions and a plurality of conductive regions, which may solve the problem of uniform electrochromic in a large area.
Referring to step S600 in fig. 2, a first light-shielding layer is formed to shield the first isolation region.
Reference is made in particular to fig. 14 and 15 in combination, wherein fig. 14 is a top view of an intermediate structure of said electrochromic structure and fig. 15 is a cross-sectional view along line EE of fig. 14. The first light-shielding layer 151 for shielding the upper isolation region 130i is formed to shield light.
When the color is changed under pressure, since an electric field cannot be formed between the upper isolation region 130i and the corresponding first conductive layer 110, the color-changing functional layer 120 in the corresponding region cannot be changed in color, and thus light leakage may occur. The first light shielding layer 151 is used for shielding the light of the upper isolation region 130i after color changing under pressure, so as to improve the color changing uniformity of the electrochromic structure.
In some embodiments, the first light-shielding layer 151 is made of black, and according to a visual rule, compared with a white line under a black background, the black line under the white background is easier to be ignored by people, so that the light leakage problem of the electrochromic structure can be effectively solved by the arrangement of the first light-shielding layer 151, and the performance of the electrochromic glass is improved.
In some embodiments of the present invention, a first light shielding layer 151 is formed on the surface of the second conductive layer 130, so that the first light shielding layer 151 covers the first electrode 141 and the second conductive layer 130 of the upper isolation region 130 i.
In addition, an upper trench 132 (as shown in fig. 6) is formed in the second conductive layer 130. Therefore, the first light shielding layer 151 may also shield the upper trench. Specifically, the first light shielding layer 151 covers the first electrode 141 and the second conductive layer 130 of the upper isolation region 130i, and fills the upper trench 132.
Further, due to the light diffraction phenomenon, in some embodiments, a projected area of the first light shielding layer 151 on the surface of the substrate 100 is larger than a projected area of the upper isolation region 130i on the surface of the substrate 100, so as to avoid light leakage at the edge of the first light shielding layer 151.
In some embodiments of the present invention, a lower isolation region 110i and a lower conductive region 110t are further disposed in the first conductive layer 110. Similar to the upper isolation region 130i in the second conductive layer 130, the color-changing functional layer 120 in the corresponding region of the lower isolation region 110i cannot change color during color changing under pressure, and light leakage occurs in the corresponding region. The electrochromic structure may further comprise: the electrochromic structure further comprises: and a second light-shielding layer 152 for shielding the lower isolation region 110 i. The forming method further includes: a second light-shielding layer 152 for shielding the lower isolation region 110i is formed to shield light.
In some embodiments of the present invention, the position of the second electrode 142 corresponds to the position of the lower isolation region 110i, and the second light shielding layer 152 covers the second electrode 142 and the portion of the second conductive layer 130 covering the upper conductive region 130t, which is located corresponding to the lower isolation region 110 i.
In addition, in some embodiments, a lower trench 111 (as shown in fig. 4) is further formed in the first conductive layer 110, and the second light shield 152 further shields the lower trench 111. Specifically, the position of the second electrode 141 corresponds to the position of the lower isolation region 110i, and the second light shielding layer 152 covers the second electrode 142 and the portion of the second conductive layer 130 covering the upper conductive region 130t, which is located corresponding to the lower isolation region 110i and the lower trench 111.
Further, due to the diffraction phenomenon, in some embodiments, a projected area of the second light shielding layer 152 on the surface of the substrate 100 is larger than a projected area of the lower isolation region 110i on the surface of the substrate 100, so as to avoid light leakage at the edge of the lower isolation region 110 i.
The first light-shielding layer 151 or the second light-shielding layer 152 may be formed by screen printing, vacuum thermal evaporation coating, vacuum magnetron sputtering coating, vacuum ion source coating, inkjet printing, or the like.
Referring to fig. 16, a schematic cross-sectional structure diagram of another embodiment of the electrochromic structure forming method of the present invention is shown.
The same parts as those in the previous embodiment are not described again, and the differences from the previous embodiment are as follows: the first light shielding layer 251 is located on one surface of the substrate 200 on which the first conductive layer 210, the color-changing functional layer 220, the second conductive layer 230, and the first and second electrodes 241 and 242 are not formed.
Specifically, in the step of forming the first conductive layer 210, the color-changing functional layer 220, the second conductive layer 230, and the first electrode 241 and the second electrode 242 are formed on the first surface of the substrate 200, so in some embodiments, the first light shielding layer 251 covers a portion of the second surface of the substrate 100, which is located corresponding to the upper isolation region 230 i.
The first light-shielding layer 251 is formed on the second surface of the substrate 200, and the first light-shielding layer 251 corresponds to the first isolation region 230 i.
Since the first light shielding layer 251 is located on the second surface of the substrate 200, the first light shielding layer 251 does not affect the electrical isolation performance between the first isolation region 230i and the first conductive region 230t of the second conductive layer 230, and therefore, in this embodiment, the first light shielding layer 251 may be formed of a metal material, but the invention is not limited thereto, and the first light shielding layer 251 may also be an opaque nonmetal.
In addition, in some embodiments, a first groove 232 is further formed in the second conductive layer 230, so the first light shielding layer 251 further shields the first groove 232. Specifically, the first light-shielding layer 251 covers the second surface of the substrate 200 and corresponds to the first isolation region 230i and the first trench 232.
Further, in some embodiments, first conductive layer 210 includes a second isolation region 210i and a second conductive region 210t that are electrically isolated from each other. The forming method further includes: the second light-shielding layer 252 is formed on the second surface of the substrate 200, and the second light-shielding layer 252 corresponds to the second isolation region 210i to shield light.
In some embodiments, the first conductive layer 210 is electrically isolated from the second isolation region 210i and the second conductive region 210t by a second trench, so the second light shielding layer 252 also shields the second trench. Specifically, the second light-shielding layer 252 is formed on the second surface of the substrate 200, and the second light-shielding layer 252 corresponds to the second isolation region 210i and the second trench.
It should be noted that, the first light shielding layer and the second light shielding layer are formed on one side of the substrate, so that the steps of forming the first light shielding layer and the second light shielding layer can be performed simultaneously, which is beneficial to simplifying the process steps and improving the manufacturing yield. However, the present invention is not limited to whether the first light-shielding layer and the second light-shielding layer are formed on the substrate side. In other embodiments of the present invention, the first light-shielding layer and the second light-shielding layer may be formed on two sides of the substrate, respectively.
Correspondingly, the invention further provides an electrochromic structure, and referring to fig. 14 and fig. 15, a schematic structural diagram of an embodiment of the electrochromic structure of the invention is shown. Wherein fig. 14 is a top view of the electrochromic structure, and fig. 15 is a cross-sectional view taken along line EE of fig. 14.
A substrate 100, the substrate 100 comprising a first side and a second side opposite the first side; a first conductive layer 110 on at least one of the first and second sides of the substrate 100; a color-changing functional layer 120 positioned on the surface of the first conductive layer 110; a second conductive layer 130 disposed on the surface of the color-changing functional layer 120, wherein the second conductive layer 130 includes a first isolation region 130i and a first conductive region 130t electrically isolated from each other; a first electrode 141 in the second conductive layer 130, the first isolation region 130i and the electrochromic layer 120, and electrically connected to the first conductive layer 110; a second electrode 142 located on the surface of the first conductive region 130t of the second conductive layer 130 and electrically connected to the first conductive region 130t of the second conductive layer 130; the first light-shielding layer 151 for shielding the first isolation region 130i is used to shield light.
In summary, the first light shielding layer for shielding light is arranged to shield the first isolation region, so that light leakage of the first isolation region can be shielded after the electrochromic glass is discolored, and the electrochromic glass is beneficial to improving the color-changing uniformity of the electrochromic glass and improving the performance of the electrochromic glass.
Although the present invention is disclosed above, the present invention is not limited thereto. Various changes and modifications may be effected therein by one skilled in the art without departing from the spirit and scope of the invention as defined in the appended claims.
Claims (34)
1. An electrochromic structure, comprising:
a substrate including a first face and a second face opposite to the first face;
the first conducting layer is positioned on the first surface of the substrate;
the color-changing functional layer is positioned on the surface of the first conductive layer;
the second conducting layer is positioned on the surface of the color-changing functional layer and is divided into a first isolation area and a first conducting area which are mutually and electrically isolated;
the first electrode is positioned in the first isolation region of the second conducting layer and penetrates through the electrochromic layer to be electrically connected with the first conducting layer;
the second electrode is positioned on the surface of the first conducting area of the second conducting layer and is electrically connected with the second conducting layer of the first conducting area;
the first light shielding layer is used for shielding the first isolation area.
2. The electrochromic structure of claim 1 wherein said first light shielding layer covers said first electrode and said second conductive layer of said first isolation region.
3. The electrochromic structure according to claim 1, wherein the first light-shielding layer covers a portion of the second surface of the substrate at a position corresponding to the first isolation region.
4. The electrochromic structure of claim 1, wherein a projected area of the first light-shielding layer on the substrate surface is larger than a projected area of the first isolation region on the substrate surface.
5. The electrochromic structure of claim 1 wherein said electrochromic structure further comprises: a first trench penetrating the second conductive layer, the first trench dividing the second conductive layer into a first isolation region and a first conductive region;
the first light shielding layer also shields the first groove.
6. The electrochromic structure of claim 5, wherein the first light shielding layer covers the first electrode and the second conductive layer of the first isolation region and fills the first trench.
7. The electrochromic structure of claim 5, wherein the first light shielding layer covers portions of the second side of the substrate that are located corresponding to the first isolation regions and the first trenches.
8. The electrochromic structure according to claim 3 or 7, wherein a material of the first light shielding layer comprises a metal.
9. The electrochromic structure of claim 1 wherein the first conductive layer comprises a second isolation region and a second conductive region electrically isolated from each other;
the electrochromic structure further comprises: and the second light shielding layer is used for shielding the second isolation area.
10. The electrochromic structure according to claim 9, wherein a position of the second electrode corresponds to a position of the second isolation region, and the second light shielding layer covers the second electrode and a portion of the second conductive layer covering the first conductive region, the portion corresponding to the second isolation region.
11. The electrochromic structure of claim 9 wherein said second light-shielding layer covers portions of said second surface of said substrate located corresponding to said second isolation regions.
12. The electrochromic structure of claim 9 wherein the projected area of said second light-shielding layer on said substrate surface is greater than the projected area of said second isolation region on said substrate surface.
13. The electrochromic structure of claim 9 wherein said electrochromic structure further comprises: a second trench penetrating the first conductive layer, the second trench dividing the first conductive layer into a second isolation region and a second conductive region;
the second light shielding layer also shields the second groove.
14. The electrochromic structure of claim 13 wherein said second electrode is positioned to correspond to the position of said second isolation region, said second light shielding layer covering said second electrode and portions of said second conductive layer covering said first conductive region positioned to correspond to said second isolation region and said second trench.
15. The electrochromic structure of claim 13 wherein said second light-shielding layer covers portions of said second side of said substrate located corresponding to said second isolation regions and said second trenches.
16. The electrochromic structure of claim 9 wherein said first isolation region and said second isolation region have a width in the range of 1 micron to 500 microns and said first conductive region and said second conductive region have a width in the range of 1 cm to 500 cm.
17. The electrochromic structure of claim 1 wherein said substrate comprises a light-transmissive substrate.
18. The electrochromic structure of claim 1 further comprising a barrier layer between said substrate and said first conductive layer.
19. The electrochromic structure of claim 1 wherein the material of said first and second conductive layers comprises a transparent conductive oxide.
20. A method of forming an electrochromic structure, comprising:
providing a substrate comprising a first side and a second side opposite the first side;
forming a first conductive layer on a first side of the substrate;
forming a color-changing functional layer positioned on the surface of the first conductive layer;
forming a second conductive layer on the surface of the color-changing functional layer, wherein the second conductive layer comprises a first isolation region and a first conductive region which are electrically isolated from each other;
forming a first electrode in a first isolation region of a second conductive layer and electrically connected to the first conductive layer through the electrochromic layer;
forming a second electrode on the surface of the first conductive area of the second conductive layer, wherein the second electrode is electrically connected with the first conductive area of the second conductive layer;
and forming a first light shielding layer for shielding the first isolation region.
21. The method of claim 20, wherein the first light shielding layer covers the first electrode and the second conductive layer of the first isolation region.
22. The method according to claim 20, wherein the first light-shielding layer is formed on the second surface of the substrate at a portion corresponding to the first isolation region.
23. The method according to claim 20, wherein a projected area of the first light shielding layer on the substrate surface is larger than a projected area of the first isolation region on the substrate surface.
24. The method of forming as claimed in claim 20, further comprising: forming a first trench penetrating the second conductive layer after forming the second conductive layer and before forming the first electrode, the first trench dividing the second conductive layer into a first isolation region and a first conductive region;
the first light shielding layer also shields the first groove.
25. The method of claim 24, wherein the first light shielding layer covers the first electrode and the second conductive layer of the first isolation region and fills the first trench.
26. The method of forming as claimed in claim 24, further comprising: and forming the first light shielding layer on the second surface of the substrate at the position corresponding to the first isolation region and the first groove.
27. The formation method of claim 20, wherein the first conductive layer includes a second isolation region and a second conductive region electrically isolated from each other;
the forming method further includes: and forming a second light shielding layer for shielding the second isolation region.
28. The method according to claim 27, wherein a position of the second electrode corresponds to a position of the second isolation region, and wherein the second light shielding layer covers the second electrode and a portion of the second conductive layer covering the first conductive region corresponding to the second isolation region.
29. The method according to claim 27, wherein the second light-shielding layer is formed on the second surface of the substrate at a portion corresponding to the second isolation region.
30. The method of claim 27, wherein a projected area of the second light shielding layer on the substrate surface is larger than a projected area of the second isolation region on the substrate surface.
31. The method of forming as claimed in claim 27, further comprising: after forming the first conductive layer and before forming the color-changing functional layer, forming a second trench penetrating the first conductive layer, the second trench dividing the first conductive layer into a second isolation region and a second conductive region; the second light shielding layer also shields the second groove.
32. The method according to claim 31, wherein a position of the second electrode corresponds to a position of the second isolation region, wherein the second light shielding layer covers the second electrode, and wherein a portion of the second conductive layer covering the first conductive region, the portion corresponding to the second isolation region and the second trench, is located.
33. The method according to claim 31, wherein the second light-shielding layer is formed on the second surface of the substrate at a portion corresponding to the second isolation region and the second trench.
34. The method according to claim 27, wherein the first light-shielding layer or the second light-shielding layer is formed by screen printing, vacuum thermal evaporation coating, vacuum magnetron sputtering coating, vacuum ion source coating, or inkjet printing.
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CN110908208B (en) * | 2019-12-17 | 2021-11-09 | 深圳市光羿科技有限公司 | Electrochromic device and preparation method and application thereof |
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