CN107045243A - Electrochromic structure and forming method thereof - Google Patents
Electrochromic structure and forming method thereof Download PDFInfo
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- CN107045243A CN107045243A CN201610084079.XA CN201610084079A CN107045243A CN 107045243 A CN107045243 A CN 107045243A CN 201610084079 A CN201610084079 A CN 201610084079A CN 107045243 A CN107045243 A CN 107045243A
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- conductive layer
- isolated area
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/15—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on an electrochromic effect
- G02F1/153—Constructional details
- G02F1/157—Structural association of cells with optical devices, e.g. reflectors or illuminating devices
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/15—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on an electrochromic effect
- G02F1/153—Constructional details
- G02F1/155—Electrodes
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- Optics & Photonics (AREA)
- Electrochromic Elements, Electrophoresis, Or Variable Reflection Or Absorption Elements (AREA)
Abstract
A kind of electrochromic structure and forming method thereof, wherein electrochromic structure includes：Substrate；The first conductive layer at least one face in the first face of substrate and the second face；Positioned at the colour change function layer of the first conductive layer surface；Positioned at the second conductive layer of colour change function layer surface, the second conductive layer includes the first isolated area and the first conducting region being electrically isolated from each other；First electrode in second the first isolated area of conductive layer and electrochromic layer, is electrically connected with the first conductive layer；Second electrode positioned at second the first conducting region of conductive layer surface, is electrically connected with second the first conducting region of conductive layer；The first light shield layer of the first isolated area is blocked, for shutting out the light.The first light shield layer of the invention by being provided for shutting out the light, to block the first isolated area, the light leak of the first isolated area can be blocked after electrochomeric glass discoloration, so as to be conducive to the change Color uniformity for improving electrochomeric glass, the performance of electrochomeric glass is improved.
Description
Technical field
The present invention relates to glass technology field, more particularly to a kind of electrochromic structure and forming method thereof.
Background technology
Electrochromism refers in the presence of extra electric field, reflectivity, transmissivity and the absorptivity of material
Can be according to the change reversible with polarity generation of the size of electric field etc. characteristic.In glass surface, electroluminescent become is set
Color structure formation electrochomeric glass, can control to realize the control to glass transmission performance by voltage.
Reported according to USGBC, the energy expenditure of building accounts for the near of overall energy resource consumption
40%：The heat that the bad window of isolation performance is lost accounts for the 10%~30% of building winter heat loss；
And summer penetrates the light that window enters interior of building, then increase the energy required for indoor refrigeration.According to
Estimation, the energy loss that the U.S. is caused due to glass of building window every year is worth about 20,000,000,000 dollars.
Electrochomeric glass can control the light transmission capacity and dazzle amount of glass, can to the light transmission capacity of glass and
Optimized through the heat of glass, keep indoor conditions comfortable, building room is maintained so as to reduce
The energy expenditure of interior temperature.Therefore, developing rapidly with material technology, electrochomeric glass has been opened
Beginning, it is big to be progressively applied to automobile anti-dazzle light reflection mirror, vehicle dormer window, window of high speed railway, aircraft windows, top grade
The fields such as the cladding glass in tall building.And gradually reducing with comprehensive use cost, electrochomeric glass energy
It is enough progressively to substitute Low-e glass, it is widely used in the intelligent building of energy-conserving and environment-protective.
But electrochomeric glass of the prior art, after pressurization discoloration, leakage problem often occurs.
The content of the invention
The problem of present invention is solved is to provide a kind of electrochromic structure and forming method thereof, to improve raising
The performance of electrochomeric glass.
To solve the above problems, the present invention provides a kind of electrochromic structure, including：
Substrate, including the first face and second face relative with first face；
First conductive layer, positioned at the first face of the substrate；
Colour change function layer, positioned at first conductive layer surface；
Second conductive layer, positioned at the colour change function layer surface, second conductive layer is separated into mutually
The first isolated area being electrically isolated and the first conducting region；
First electrode, in the first isolated area of the second conductive layer and through the electrochromic layer with
The first conductive layer electrical connection；
Second electrode, positioned at the first conducting region surface of the second conductive layer, described with the first conducting region
Two conductive layers are electrically connected；
First light shield layer, for blocking the first isolated area.
Optionally, first light shield layer covers the second of the first electrode and first isolated area
Conductive layer.
Optionally, first light shield layer is covered in the second face of the substrate, position and described first
The corresponding part of isolated area.
Optionally, first light shield layer is more than the described first isolation in the projected area of the substrate surface
Projected area of the area in the substrate surface.
Optionally, the electrochromic structure also includes：Through the first groove of second conductive layer,
Second conductive layer is divided into the first isolated area and the first conducting region by the first groove；
First light shield layer also blocks the first groove.
Optionally, first light shield layer covers the second of the first electrode and first isolated area
Conductive layer, and fill the first groove.
Optionally, first light shield layer cover the second face of substrate, position with described first every
From area and the corresponding part of the first groove.
Optionally, the material of first light shield layer includes metal.
Optionally, the first conductive layer includes the second isolated area and the second conducting region being electrically isolated from each other；
The electrochromic structure also includes：Second light shield layer, for blocking the second isolated area.
Optionally, the position of the second electrode is corresponding with the position of second isolated area, and described
Two light shield layers cover the second electrode, and cover the second conductive layer of the first conducting region, position
Put the part corresponding with second isolated area.
Optionally, second light shield layer cover the second face of substrate, position with described second every
The part corresponding from area.
Optionally, second light shield layer is more than the described second isolation in the projected area of the substrate surface
Projected area of the area in the substrate surface.
Optionally, the electrochromic structure also includes：Through the second groove of first conductive layer,
First conductive layer is divided into the second isolated area and the second conducting region by the second groove；
Second light shield layer also blocks the second groove.
Optionally, the position of the second electrode is corresponding with the position of second isolated area, and described
Two light shield layers cover the second electrode and cover the second conductive layer of the first conducting region, position
Put the part corresponding with second isolated area and the second groove.
Optionally, second light shield layer cover the second face of substrate, position with described second every
The part corresponding with the second groove from area.
Optionally, the width range of first isolated area and second isolated area is 1 micron~500 micro-
The width range of rice, first conducting region and second conducting region is 1 centimetre~500 centimetres.
Optionally, the substrate includes light-transparent substrate.
Optionally, the electrochromic structure also includes being located between the substrate and first conductive layer
Barrier layer.
Optionally, the material of first conductive layer and second conductive layer includes transparent conductive oxide.
Accordingly, the present invention also provides a kind of forming method of electrochromic structure, including：
Substrate is provided, the substrate includes the first face and second face relative with first face；
The first conductive layer formed on the first face of the substrate；
Form the colour change function layer positioned at first conductive layer surface；
The second conductive layer positioned at the colour change function layer surface is formed, second conductive layer includes mutual
The first isolated area being electrically isolated and the first conducting region；
The first electrode formed in the first isolated area of the second conductive layer, and pass through the electrochromism
Layer is electrically connected with first conductive layer；
Formed positioned at second the first conducting region of conductive layer surface second electrode, the second electrode with it is described
Second the first conducting region of conductive layer is electrically connected；
Form the first light shield layer for blocking the first isolated area.
Optionally, first light shield layer covers the second of the first electrode and first isolated area
Conductive layer.
Optionally, on the second face of the substrate, the part that position is corresponding with first isolated area
Form first light shield layer.
Optionally, first light shield layer is more than the described first isolation in the projected area of the substrate surface
Projected area of the area in the substrate surface.
Optionally, the forming method also includes：After second conductive layer is formed, the is being formed
Before one electrode, the first groove through second conductive layer is formed, the first groove is by described the
Two conductive layers are divided into the first isolated area and the first conducting region；
First light shield layer also blocks the first groove.
Optionally, first light shield layer covers the second of the first electrode and first isolated area
Conductive layer, and fill the first groove.
Optionally, in addition to：In the second face of the substrate, position and first isolated area and the
The corresponding part of one groove forms first light shield layer.
Optionally, the first conductive layer includes the second isolated area and the second conducting region being electrically isolated from each other；
The forming method also includes：Form the second light shield layer for blocking the second isolated area.
Optionally, the position of the second electrode is corresponding with the position of second isolated area, and described
Two light shield layers cover the second electrode and covering first conducting region it is the second conductive layer, with
The corresponding part of second isolated area.
Optionally, on the second face of the substrate, the part that position is corresponding with second isolated area
Form second light shield layer.
Optionally, second light shield layer is more than the described second isolation in the projected area of the substrate surface
Projected area of the area in the substrate surface.
Optionally, the forming method also includes：After the first conductive layer is formed, the work(that changes colour is being formed
After ergosphere, the second groove through first conductive layer is formed, the second groove is by described first
Conductive layer is divided into the second isolated area and the second conducting region；
Second light shield layer also blocks the second groove.
Optionally, the position of the second electrode is corresponding with the position of second isolated area, and described
Two light shield layers cover the second electrode, and cover the second conductive layer of the first conducting region, position
Put the part corresponding with second isolated area and the second groove.
Optionally, on the second face of the substrate, position and second isolated area and second ditch
The corresponding part of groove forms second light shield layer.
Optionally, first light shield layer or second light shield layer pass through silk-screen printing, vacuum thermal evaporation
Plated film, vacuum magnetron sputtering coating film, vacuum ionic source plated film, the mode of inkjet printing are formed.
Compared with prior art, technical scheme has advantages below：
The present invention, can to block the first isolated area by the first light shield layer for being provided for shutting out the light
After electrochomeric glass discoloration, the light leak of the first isolated area is blocked, so as to be conducive to improving electrochromism
The change Color uniformity of glass, improves the performance of electrochomeric glass.
In the alternative of the present invention, first conductive layer also includes the second isolated area being electrically isolated from each other
With the second conducting region, therefore the electrochomeric glass also include block second isolated area second hide
Photosphere, to block the light leak of the second isolated area, is conducive to improving the change Color uniformity of electrochomeric glass,
So as to improve electrochromic performance.
In the alternative of the present invention, first light shield layer and second light shield layer are in the substrate table
Face projected area is respectively greater than the throwing of first isolated area and second isolated area in the substrate surface
Shadow area, it is possible to reduce the light leak caused due to light diffraction, further improves electrochomeric glass
Shading performance.
Brief description of the drawings
Fig. 1 is a kind of cross-sectional view of electrochromic structure；
Fig. 2 is the schematic flow sheet of the embodiment of forming method one of electrochromic structure of the present invention；
Fig. 3 to Figure 15 is that each step of the embodiment of forming method one of electrochromic structure of the present invention centre is tied
The structural representation of structure；
Figure 16 is the cross section structure diagram of another embodiment of electrochromic structure forming method of the present invention；
Embodiment
From background technology, the problem of there is light leak in electrochomeric glass of the prior art.In conjunction with
In the prior art in electrochomeric glass the reason for its leakage problem of the structural analysis of electrochromic structure：
With reference to Fig. 1, a kind of cross-sectional view of electrochromic structure is shown.
As shown in figure 1, the electrochomeric glass includes substrate 10 and is sequentially located at the surface of substrate 10
The first conductive layer 11, the conductive layer 13 of electrochromic layer 12 and second；Sequentially pass through the second conductive layer
13 and the first electrode 14a and the second electrode 14b positioned at the surface of the second conductive layer 13 of electrochromic layer 12
Electrically connected respectively with the first conductive layer 11 and the second conductive layer 13, to first conductive layer 11 and second
The on-load voltage signal of conductive layer 13, makes to form electric field between the first conductive layer 11 and the second conductive layer 13 to control
The color of electrochromic layer 12 processed.
In order to avoid occurring short circuit phenomenon between first electrode 14a and second electrode 14b, described second is conductive
13 points of first isolated area 13i and the first conducting region 13t, the first electrode 14a to be electrically isolated from each other of layer
In the first isolated area 13i, the second electrode 14b is located in the first conducting region 13t.
Because first electrode 14a is located in the first isolated area 13i, therefore the first isolated area 13i second is led
Current potential between the respective regions of 13 and first conductive layer of electric layer 11 is equal, it is impossible to forms electric field, therefore works as
During pressurization discoloration, between the first isolated area 13i the second conductive layer 13 and the respective regions of the first conductive layer 11
Electrochromic layer 12 will not change colour, so as to light leak occur.
The specific embodiment of the present invention is described in detail below in conjunction with the accompanying drawings.
Fig. 2 is the schematic flow sheet of the embodiment of forming method one of electrochromic structure of the present invention.
Fig. 3 to Figure 15 is that each step of the embodiment of forming method one of electrochromic structure of the present invention centre is tied
The structural representation of structure.
With reference to step S100 in Fig. 2, and combination refers to Fig. 3, first there is provided substrate 100, the substrate
100 include the first face and second face relative with first face.
The substrate is used to provide physical support platform.The substrate 100 can be that flexible substrates can also
It is rigid basement.The substrate 100 can be light transmissive material.In certain embodiments, the substrate 100
For glass.
In certain embodiments, glass can be pressed directly in the electrochromic structure formed and constitutes electricity
Photo chromic glass is caused, the structure of electrochomeric glass can be simplified, reduces the weight of electrochomeric glass.
The quantity of the electrochromic structure is not limited, in further embodiments, can be by by institute
State electrochromic structure clamping and form electrochromic structure between two blocks of glass, so as to reduce to technique machine
The requirement of platform, reduces manufacturing cost.
With reference to step S200 in Fig. 2, and with continued reference to Fig. 3, formed on the first face of the substrate 100
The first conductive layer 110.
First conductive layer 110 is formed on the first face of the substrate 100, first conductive layer
110 are used to on-load voltage form electric field.The material of first conductive layer 110 includes transparent conductive oxide
Thing (Transparent Conductive Oxide, TCO).Specifically, first conductive layer 110 can be with
For tin indium oxide (ITO), zinc-tin oxide (IZO), zinc oxide aluminum (AZO), fluorine mix tin oxide (FTO),
One or more in the materials such as gallium doped stannum oxide (GTO)；It can also be conductive transparent nitride
Including the one or more in the materials such as titanium nitride, titanium oxynitrides, tantalum nitride and tantalum nitride oxide；Also may be used
To be the grapheme material of electrically conducting transparent；It can also be other transparent metal or alloy materials.Described
The thickness range of one conductive layer 110 is 10 nanometers~1000 nanometers.Optionally, in certain embodiments,
The thickness range of first conductive layer 110 is 100 nanometers~600 nanometers.
It should be noted that in order to avoid foreign ion diffuses into first conductive layer 110, so that shadow
The electric conductivity of first conductive layer 110 is rung, therefore the electrochromic structure is also included positioned at described
Barrier layer 101 between substrate 100 and first conductive layer 110, so the forming method can be with
Including：Before the first conductive layer 110 is formed, the barrier layer 101 on covering substrate 100 surface is formed.
In certain embodiments, the substrate 100 is soda-lime glass, in order to avoid the sodium ion in soda-lime glass
Diffuse into the first conductive layer 110 and reduce the electrical conductivity of first conductive layer 110, it is described to stop
Layer 101 is one or more sodium in the materials such as silica, silicon nitride, silicon oxynitride, aluminum oxide
Ion barrier.
With reference to Fig. 4 to Fig. 6, the colour change function layer 120 positioned at the surface of the first conductive layer 110 is formed.
It should be noted that in order to improve the first conductive layer 110 and subsequently be formed between second electrode
Be electrically isolated property, it is to avoid occur leaking electricity or short circuit the problem of, first conductive layer 110 include mutually electricity every
From the second isolated area and the second conducting region, the quantity of second isolated area be it is one or more, it is described
The quantity of second conducting region is one or more.
To simplify device architecture, reduce in technology difficulty, some embodiments of the invention, second isolation
Realized and isolated by second groove between area and second conducting region.Therefore with reference to step S210 in Fig. 2,
After the first conductive layer is formed, the second groove through the first conductive layer is formed, the second groove will
First conductive layer is divided into the second isolated area and the second conducting region.
Fig. 4 and Fig. 5 is referred to specifically, combining, wherein Fig. 4 shows and tied in the middle of the electrochromic structure
The schematic top plan view of structure, Fig. 5 is the sectional view along AA lines in Fig. 4.Forming the first conductive layer 110
Afterwards, the forming method also includes：Form the lower groove 111 through first conductive layer 110, institute
It is lower isolated area 110i and lower conducting region 110t that lower groove 111, which is stated, by 110 points of first conductive layer.Institute
State lower groove 111 and constitute the second groove, the lower isolated area 110i constitutes second isolated area,
The lower conducting region 110t constitutes second conducting region.
The width range of the lower isolated area 110i is 1 micron~500 microns, the lower conducting region 110t
Width range be 1 centimetre~500 centimetres.In order to improve the electrochromic structure change Color uniformity and
Color change, optionally, the width range of the lower isolated area 110i is 5 microns~50 microns, described
Lower conducting region 110t width range is 5 centimetres~50 centimetres.
The lower groove 111 can be the multiple lower isolated area 110i so formed along the extension of " several " font
Between connection form between pectination, multiple lower conducting region 110t connection and form pectination, the multiple lower conduction
The broach of the pectination of area 110t formation and the pectination of multiple lower isolated area 110i formation is mutually compensated for.Under described
Isolated area 110i width (broach width) scope is 5 centimetres~50 centimetres, is passed under being between adjacent fingers
Area 110t is led, lower conducting region 110t width range is 5 centimetres~50 centimetres.The lower groove 111
Width range is 1 micron~50 microns.Optionally, the width range of the lower groove 111 is 2 microns~10
Micron is to improve the insulating properties between the lower isolated area 110i and lower conducting region 110t.
The lower groove 111 can be formed by way of laser scribing in first conductive layer 110.
Specifically, the lower ditch can be formed by visible light lasers line technique or infrared light laser scribe process
Groove 111.In addition, during laser scribe process pulse work(can also be used using firm power output
Rate is exported.Optionally, in certain embodiments, the lower groove is formed by pulse laser hatched manner
111, the pulses range is 5KHz~500KHz, and laser power scope is 0.1 watt~10 watts.One
In a little embodiments, laser power scope is 0.5 watt~5 watts.It should be noted that passing through laser scribing
The way that mode forms the lower groove 111 is only an example, and the present invention is to forming the lower groove 111
Specific method do not limit.
It should be noted that with reference to step S211 in Fig. 2, in certain embodiments, in the case where formation is described
After the step of flute 111, before the step of forming colour change function layer 120, the formation side
Method also includes：Dust is removed remaining, to obtain the artistic face of cleaning.
Step S300 in Fig. 2, and combination refers to Fig. 6 afterwards, forms and is located at first conductive layer 110
The colour change function layer 120 on surface.
It should be noted that in certain embodiments, after the step of forming lower groove 111,
Before the step of forming colour change function layer 120, the forming method also includes：Remove dust residual
It is remaining, it is remaining to remove dust produced by being formed during the lower groove 111, it is subsequent process steps
Clean surface is provided.
The colour change function layer 120 is used to change color under voltage control.The colour change function layer 120
Including one or more functions layer, the step of forming colour change function layer 120 includes：Formed one or
Multiple functional layers, the functional layer includes electrochromic layer, ion storage and positioned at electrochromic layer
Ion conducting layer between ion storage.
Wherein, the electrochromic layer is used for that redox reaction, color to occur under DC Electric Field
Change, can be changed for color after cathodic electrochromic metal oxide, i.e. ion implanting
Metal oxide, such as oxygen debt tungsten oxide (WOx, 2.7<x<3), titanium oxide (TiO2), vanadium oxide (V2O5)、
Niobium oxide (Nb2O5), molybdenum oxide (MoO3), tantalum oxide (Ta2O5) etc. one or more in material；
Can also be lithium, sodium, potassium, vanadium or titanium doped cathodic electrochromic metal oxide.Specifically, institute
The thickness range for stating electrochromic layer is 10 nanometers~1000 nanometers.Optionally, the electrochromic layer
Thickness range is 300 nanometers~600 nanometers.
The ion conducting layer is used to transmit ion, can be Li2O、Li2O2、Li3N、LiI、LiF、
SiO2、Al2O3、Nb2O3、LiTaO3、LiNbO3、La2TiO7、Li2WO4, oxygen-rich oxide tungsten (WOx,
3<x<3.5)、HWO3、ZrO2、HfO2、LaTiO3、SrTiO3、BaTiO3、LiPO3Deng in material
One or more.Specifically, the thickness range of the ion conducting layer is 10 nanometers~300 nanometers.Can
Choosing, the thickness range of the ion conducting layer is 20 nanometers~150 nanometers.
The ion storage is used to store electrically corresponding ion, keeps the charge balance of whole system,
The metal oxide that can be changed for color after anode electrochromic metal oxides, i.e. elemental release,
Such as vanadium oxide (V2O5), chromium oxide (Cr2O3), manganese oxide (Mn2O3), iron oxide (Fe2O3), oxygen
Change cobalt (Co2O3), nickel oxide (Ni2O3), yttrium oxide (IrO2), nickel-tungsten oxide, nickel oxide vanadium, oxygen
Change the one or more in the materials such as NiTi, nickel oxide niobium, nickel oxide molybdenum, nickel oxide tantalum；Can also be
Mixed-metal oxides LixNiyMzOa, wherein 0<x<10,0<y<1,0<z<10,
(0.5x+1+0.5y+z)<a<(0.5x+1+0.5y+3.5z), wherein M can be Al, Cr, Zr, W, V,
The metallic elements such as Nb, Hf, Y, Mn.Specifically, the ion storage thickness range is 10 nanometers
~1000 nanometers.Optionally, the ion storage thickness range is 100 nanometers~300 nanometers.
In addition, the step of formation of embodiment of the present invention functional layer includes：Along remote substrate 100
Direction, sequentially forms electrochromic layer, ion conducting layer and ion storage；Or along away from substrate
100 direction, sequentially forms ion storage, ion conducting layer and electrochromic layer.Specifically, can
To pass through the film deposition such as chemical vapor deposition, physical vapour deposition (PVD) and ald technique formation institute
State functional layer.
It should be noted that the colour change function layer 120 is also filled up in the lower groove 111.
With reference to step S400 in Fig. 2, and combination refers to Fig. 7, is formed and is located at colour change function layer 120
Second conductive layer 130 on surface.
Second conductive layer 130 is used to on-load voltage form electric field.Second conductive layer 130
Material also includes transparent conductive oxide (Transparent Conductive Oxide, TCO).Specifically,
Second conductive layer 130 can for tin indium oxide (ITO), zinc-tin oxide (IZO), zinc oxide aluminum (AZO),
Fluorine mixes the one or more in the materials such as tin oxide (FTO), gallium doped stannum oxide (GTO)；Can also
It is that conductive transparent nitride is included in the materials such as titanium nitride, titanium oxynitrides, tantalum nitride and tantalum nitride oxide
One or more；It can also be the grapheme material of electrically conducting transparent；It can also be other transparent metals
Or alloy material.The thickness range of second conductive layer 130 is 10 nanometers~1000 nanometers.Optionally,
In certain embodiments, the thickness range of second conductive layer 130 is 100 nanometers~600 nanometers.Tool
Body, the film deposition work such as chemical vapor deposition, physical vapour deposition (PVD) and ald can be passed through
Skill forms second conductive layer 130.
Second conductive layer includes the first isolated area and the first conducting region being electrically isolated from each other, described first
The quantity of isolated area is one or more, and the quantity of first conducting region is one or more.In this hair
In some bright embodiments, the second conductive layer of first isolated area and the first conducting region passes through first groove
Realize and be electrically isolated.Specifically, with reference to step S410 in Fig. 2, after the second conductive layer is formed, being formed
Through the first groove of second conductive layer, second conductive layer is divided into first by the first groove
Isolated area and the first conducting region.
Fig. 8 and Fig. 9 is referred to specifically, combining, wherein Fig. 8 gives and tied in the middle of the electrochromic structure
The schematic top plan view of structure, Fig. 9 is the sectional view along BB lines in Fig. 8.Forming the second conductive layer 130
Afterwards, the forming method also includes：Form the upper groove 132 through second conductive layer 130, institute
It is upper isolated area 130i and upper conducting region 130t that groove 132, which is stated, by 130 points of second conductive layer.Institute
State groove 132 and constitute the first groove, the upper isolated area 110i constitutes first isolated area,
The upper conducting region 130t constitutes first conducting region.
The upper groove 132 can be the multiple upper isolated area 130i so formed along the extension of " several " font
Between connection form between pectination, multiple upper conducting region 130t connection and form pectination, the multiple upper conduction
The broach of the pectination of area 130t formation and multiple upper isolated area 130i pectinations formed is mutually compensated for, it is described on
Isolated area 130i width (the broach width of comb) scope is 5 microns~50 microns, between adjacent fingers
For upper conducting region 130t, upper conducting region 130t width range is in 5 centimetres~50 cm range.
It should be noted that to avoid the occurrence of the circuit problems such as electric leakage, short circuit, the upper isolated area 130i
Projection with the lower isolated area 110i on the surface of substrate 100 is mutually staggered, that is to say, that described
The projection of upper isolated area 130i and the lower isolated area 110i on the surface of substrate 100 is not overlapping.
The width range of the upper groove 132 is 1 micron~50 microns.Optionally, the upper groove 132
Width range for 2 microns~10 microns to improve between the upper isolated area 130i and upper conducting region 130t
Insulating properties.
The upper groove 132 can be formed by way of laser scribing in second conductive layer 130.
Specifically, the upper ditch can be formed by visible light lasers line technique or infrared light laser scribe process
Groove 132.In addition, during laser scribe process pulse work(can also be used using firm power output
Rate is exported.Optionally, in certain embodiments, the upper groove is formed by pulse laser hatched manner
132, the pulses range is 5KHz~500KHz, and laser power scope is 0.1 watt~10 watts.One
In a little embodiments, laser power scope is 0.5 watt~5 watts.It should be noted that passing through laser scribing
The way that mode forms the upper groove 132 is only an example, and the present invention is to forming the upper groove 132
Specific method do not limit.
It should be noted that with reference to step S411 in Fig. 2, the step of groove 132 on described are formed it
Afterwards, the forming method can also include cleaning dust remnants, improve the manufacture that electrochromic structure is searched by Soviet Union
Yields.
Figure 10 to Figure 13, shows the first electrode to be formed in the first isolated area of the second conductive layer,
And electrically connect and formed through the electrochromic layer and first conductive layer and be located at the second conductive layer the
The second electrode on one conducting region surface, the second electrode is electrically connected with the conducting region of the second conductive layer first
The schematic diagram of the intermediate structure connect, wherein Figure 10 and Figure 12 are schematic top plan views, during Figure 11 is Figure 10
Cross section structure diagram under along CC, Figure 13 is the cross section structure diagram along DD lines in Figure 12.
Specifically, with reference to step S510 in Fig. 2, and combine and refer to Figure 10 and Figure 11, be initially formed according to
Secondary the 3rd groove 133 for running through second conductive layer 130 and colour change function layer 120.
Specifically, the 3rd groove 133 is located in the second conductive layer 130 of the upper isolated area 130i,
And through the electrochromic layer 120, first conductive layer 110 is exposed in bottom.3rd groove 133
Width range be 1 micron~50 microns.In order to reduce technology difficulty, manufacture yields is improved, optionally,
The width range of 3rd groove 133 is in 2 microns~10 micrometer ranges.
3rd groove 133 can be formed by way of laser scribing.Specifically, can be by can
See that ray laser line technique or infrared light laser scribe process form the 3rd groove 133.In addition, laser
It can also can be exported during technique of ruling using firm power output using pulse power.Optionally,
In certain embodiments, the 3rd groove 133, the pulse frequency are formed by pulse laser hatched manner
Rate scope is 5KHz~500KHz, and laser power scope is 0.1 watt~10 watts.In some embodiments, swash
Reference optical power is 0.5 watt~5 watts.It should be noted that forming described by way of laser scribing
The way of three grooves 133 is only an example, specific method of the present invention to formation the 3rd groove 133
Do not limit.
It should be noted that with reference to step S511 in Fig. 2, the step of the 3rd groove 133 are formed
Afterwards, the forming method can also include cleaning dust remnants, to improve the electrochromic structure
Manufacture yields.
Step S520 in Fig. 2 is referred to afterwards, first formed in the first isolated area of the second conductive layer
Electrode, and electrically connected through the electrochromic layer with first conductive layer；Formed and be located at the second conduction
The second electrode on the first conducting region surface of layer, the second electrode and the conducting region of the second conductive layer first
Electrical connection.
Figure 12 and Figure 13 is referred to specifically, combining, after the 3rd groove 133 is formed, to the described 3rd
Filling conductive material is to form the first electrode 141 in groove 133, and the first electrode 141 is located at upper
In isolated area 130i, and first through the colour change function layer 120 and lower conducting region 110t is conductive
Layer 110 is electrically connected；The second electrode 142 is located at the surface of conducting region 130t on the second conductive layer 130,
And electrically connected with upper conducting region 130t the second conductive layer 130.
The first electrode 141 and the second electrode 142 are used for respectively to first conductive layer 110
With the on-load voltage signal of the second conductive layer 130 so that the first conductive layer 110 and the second conductive layer 130
Between form electric field, with realize to colour change function layer 120 color control.
Electric isolution between the upper isolated area 130i and the upper conducting region 130t realizes first electricity
Electric isolution between pole 141 and second electrode 142, makes first electrode 141 and the equal energy of second electrode 142
Positioned at the surface of second conductive layer 130, make the first electrode 141 and the second electrode 142
The electrochromic structure surface is can be uniformly distributed in, so as to improve the first conductive layer 110 and
The uniformity coefficient of electric field between two conductive layers 130, improves the change color uniformity of the colour change function layer 120,
Improve electrochromic structure color change it is slow the problem of, and then be conducive to expand electrochomeric glass area,
Make the discoloration of large area electrochomeric glass faster, evenly.
Meanwhile, the electric isolution between the lower isolated area 110i and the lower conducting region 110t, it is possible to increase
Electric isolution between the first electrode 141 and lower isolated area 110i first conductive layer 110, drop
The possibility that the circuit problems such as Low dark curient, short circuit occur, improves the yields of the manufacture electrochromic structure,
Improve the performance of the electrochromic structure, extend the service life of the electrochromic structure.
In addition, the second electrode 142 and the lower isolated area 110i positions are mutually corresponded to, and lower isolation
Area 110i isolates with lower conducting region 110t, and electric isolution can be further improved here, and reduction punctures risk.
The material of the first electrode 141 and second electrode 142 can be metal.The first electrode 141
Or the second electrode 142 can be plated by silk-screen printing, vacuum thermal evaporation plated film, vacuum magnetic-control sputtering
The modes such as film, vacuum ionic source plated film, inkjet printing are formed.
In order to simplify device architecture, improve in manufacture yields, some embodiments of the invention, formed
First electrode 141 can be parallel to each other with the upper groove 132, and the second electrode 142 can be with institute
Lower groove 111 is stated to be parallel to each other.In addition, between the first electrode 141 and the second electrode 142
It can also be parallel to each other.
, can be mutual between the first electrode 141 when the quantity of the first electrode 141 is more than 1
It is parallel；, can also between the second electrode 142 when the quantity of the second electrode 142 is more than 1
It is parallel to each other.
In addition, the uniformity in order to improve electric field between first electrode 141 and second electrode 142, described
Cross arrangement between second electrode 142 and first electrode 141, i.e., when the electrochromic structure is including more
When individual first electrode 141 or multiple second electrodes 142, the first electrode 141 is uniformly distributed in adjacent
Between second electrode 142, or the second electrode 142 be uniformly distributed in adjacent first electrode 141 it
Between.
In example as shown in figure 12, the quantity of the first electrode 141 is 2, the second electrode
142 quantity is 3.One first electrode 141, and described the are set between adjacent second electrode 142
The distance of one electrode 141 to adjacent second electrode 142 is equal；One is set between adjacent first electrode 141
Individual second electrode 142, and the distance of the second electrode 142 to adjacent first electrode 141 is equal.
In other implementations, the quantity of electrode can be carried out according to the size of actual electrochromic structure
Arrange.In certain embodiments, a pair of first electrodes and second electrode can be set within the specific limits.
I.e. in the above-described embodiments, first conductive layer and the second conductive layer can be divided into corresponding multiple
Isolated area and multiple conducting regions, if in fact, area is little, they can only be set to one respectively,
There was only 1 pair of first electrode and second electrode, but first electrode and second electrode are respectively positioned on electroluminescent change
The side of chromatograph.In certain embodiments, first conductive layer can not be even isolated, and only second
Conductive layer is divided into multiple isolated areas and multiple conducting regions, can solve electrochromism under large area uniform
The problem of.
With reference to step S600 in Fig. 2, the first light shield layer for blocking the first isolated area is formed.
Specific combine refers to Figure 14 and Figure 15, and wherein Figure 14 is the electrochromic structure intermediate structure
Top view, Figure 15 is the sectional view along EE lines in Figure 14.Formed and block the of isolated area 130i
One light shield layer 151, for shutting out the light.
When pressurizeing discoloration, due to nothing between upper isolated area 130i and corresponding first conductive layer 110
Method formation electric field, so the colour change function layer 120 of respective regions can not realize discoloration, so leakage occurs
Light.First light shield layer 151 is used for after pressurization discoloration, isolated area 130i light is blocked, to carry
The change Color uniformity of the high electrochromic structure.
In certain embodiments, the material of first light shield layer 151 is black, according to visual law,
Compared with white line under black background, the black lines under white background are easier to be ignored by people, therefore
The setting of first light shield layer 151 can effectively solve the problem that the leakage problem of electrochromic structure, improve electroluminescent become
The performance of color glass.
In some embodiments of the invention, the first light shield layer 151 is formed on the surface of the second conductive layer 130,
So first light shield layer 151 covers the of the first electrode 141 and the upper isolated area 130i
Two conductive layers 130.
In addition, being also formed with groove 132 (as shown in Figure 6) in second conductive layer 130.Therefore,
First light shield layer 151 can also block the upper groove.Specifically, first light shield layer 151
Cover the first electrode 141 and the upper isolated area 130i the second conductive layer 130, and filling institute
State groove 132.
Further, due to the presence of light diffraction phenomenon, in certain embodiments, first light shield layer
151 the surface of substrate 100 projected area be more than it is described on isolated area 130i in the substrate 100
The projected area on surface, to avoid the edge of the first light shield layer 151 from light leak occur.
In some embodiments of the invention, lower isolated area 110i is additionally provided with first conductive layer 110
With lower conducting region 110t.It is similar with upper isolated area 130i in the second conductive layer 130, when pressurizeing discoloration,
Colour change function layer 120 in lower isolated area 110i corresponding regions can not also change colour, and can also go out in respective regions
Existing light leak.So the electrochromic structure can also include：The electrochromic structure also includes：With
In the second light shield layer 152 for blocking lower isolated area 110i.The forming method also includes：Formation is blocked down
Isolated area 110i the second light shield layer 152, for shutting out the light.
In some embodiments of the invention, the position of the second electrode 142 is with the lower isolated area 110i's
Position is corresponding, and second light shield layer 152 covers the second electrode 142, and covers described upload
Lead the second conductive layer 130 of area 130t, the position part corresponding with the lower isolated area 110i.
In addition, in certain embodiments, lower groove 111 is also formed with (such as in first conductive layer 110
Shown in Fig. 4), the lower groove 111 is also blocked in second shading 152.Specifically, second electricity
The position of pole 141 is corresponding with the position of the lower isolated area 110i, and second light shield layer 152 is covered
The second electrode 142 and covering the second conductive layer 130 of upper conducting region 130t, position
The part corresponding with the lower isolated area 110i and the lower groove 111.
Further, due to the presence of diffraction phenomena, in certain embodiments, second light shield layer 152
Projected area on the surface of substrate 100 is more than throwings of the lower isolated area 110i on the surface of substrate 100
Shadow area, to avoid the lower isolated area 110i edges from light leak occur.
First light shield layer 151 or second light shield layer 152 can pass through silk-screen printing, Vacuum Heat
The various ways such as evaporating coating, vacuum magnetron sputtering coating film, vacuum ionic source plated film, inkjet printing are formed.
With reference to Figure 16, the sectional structure of another embodiment of electrochromic structure forming method of the present invention is shown
Schematic diagram.
Repeat no more, be with the difference of previous embodiment with previous embodiment something in common：It is described
First light shield layer 251 positioned at the substrate 200 be formed without the first conductive layer 210, colour change function layer 220,
In second conductive layer 230 and first electrode 241 and the one side of the side of second electrode 242.
Specifically, in the step of forming the first conductive layer 210, the shape on the first face of the substrate 200
Into first conductive layer 210, colour change function the 220, second conductive layer 230 of layer and first electrode 241
With second electrode 242, so in some embodiments, first light shield layer 251 is covered in the substrate
100 the second face, the position part corresponding with the upper isolated area 230i.
First light shield layer 251, first light shield layer are formed on the second face of the substrate 200
251 is corresponding with the first isolated area 230i.
On the second face for being located at substrate 200 due to the first light shield layer 251, therefore the first light shield layer 251 is simultaneously
The electric isolution between the isolated area 230i of the second conductive layer 230 first and the first conducting region 230t is not interfered with
Can, so in the present embodiment, first light shield layer 251 can be formed for metal material, but this hair
Bright that this is not limited, first light shield layer 251 can also be opaque nonmetallic.
In addition, in certain embodiments, first groove 232 is also formed with second conductive layer 230,
Therefore first light shield layer 251 also blocks the first groove 232.Specifically, first light shield layer
251 cover the faces of substrate 200 second and relative with the first isolated area 230i and first groove 232
Should.
Further, in certain embodiments, the first conductive layer 210 includes the second isolation being electrically isolated from each other
Area 210i and the second conducting region 210t.The forming method also includes：In the second face of the substrate 200
It is upper to form second light shield layer 252, second light shield layer 252 and the second isolated area 210i phases
Correspondence, to shut out the light.
In certain embodiments, second isolated area is realized by second groove in first conductive layer 210
Electric isolution between 210i and the second conducting region 210t, so second light shield layer 252 also blocks described
Second groove.Specifically, forming second light shield layer 252, institute on the second face of the substrate 200
State the second light shield layer 252 corresponding with the second isolated area 210i and the second groove.
It should be noted that first light shield layer and the second light shield layer are formed in the side of the substrate,
It can make to form first light shield layer and be carried out simultaneously the step of forming second light shield layer, be conducive to
Simplify processing step, improve manufacture yields.But whether the present invention is to forming described the in substrate side
One light shield layer and the second light shield layer are not limited.In other embodiments of the present invention, can be in the substrate
Both sides form first light shield layer and the second light shield layer respectively.
Accordingly, the present invention also provides a kind of electrochromic structure, with reference to Figure 14 and Figure 15, shows this
The structural representation of the embodiment of invention electrochromic structure one.Wherein Figure 14 is the electrochromic structure
Top view, Figure 15 is the sectional view in Figure 14 along EE lines.
Substrate 100, the substrate 100 includes the first face and second face relative with first face；It is located at
The first conductive layer 110 on first face of the substrate 100 and at least one face in the second face；Positioned at described
The colour change function layer 120 on the surface of the first conductive layer 110；Second positioned at 120 surface of colour change function layer leads
Electric layer 130, second conductive layer 130 includes the first isolated area 130i and the first conducting region being electrically isolated from each other
130t；First electrode in the isolated area 130i of the second conductive layer 130 first and electrochromic layer 120
141, electrically connected with first conductive layer 110；Positioned at the conducting region 130t surfaces of the second conductive layer 130 first
Second electrode 142, electrically connected with the conducting region 130t of the second conductive layer 130 first；Block the first isolation
Area 130i the first light shield layer 151, for shutting out the light.
To sum up, the first light shield layer of the invention by being provided for shutting out the light, to block the first isolated area,
The light leak of the first isolated area can be blocked after electrochomeric glass discoloration, so as to be conducive to improving electroluminescent
The change Color uniformity of photo chromic glass, improves the performance of electrochomeric glass.
Although present disclosure is as above, the present invention is not limited to this.Any those skilled in the art,
Without departing from the spirit and scope of the present invention, it can make various changes or modifications, therefore the guarantor of the present invention
Shield scope should be defined by claim limited range.
Claims (34)
1. a kind of electrochromic structure, it is characterised in that including：
Substrate, including the first face and second face relative with first face；
First conductive layer, positioned at the first face of the substrate；
Colour change function layer, positioned at first conductive layer surface；
Second conductive layer, positioned at the colour change function layer surface, second conductive layer is separated into mutually
The first isolated area being electrically isolated and the first conducting region；
First electrode, in the first isolated area of the second conductive layer and through the electrochromic layer with
The first conductive layer electrical connection；
Second electrode, positioned at the first conducting region surface of the second conductive layer, described with the first conducting region
Two conductive layers are electrically connected；
First light shield layer, for blocking the first isolated area.
2. electrochromic structure as claimed in claim 1, it is characterised in that first light shield layer covers institute
State the second conductive layer of first electrode and first isolated area.
3. electrochromic structure as claimed in claim 1, it is characterised in that first light shield layer is covered in
The the second face of the substrate, the position part corresponding with first isolated area.
4. electrochromic structure as claimed in claim 1, it is characterised in that first light shield layer is described
The projected area of substrate surface is more than projected area of first isolated area in the substrate surface.
5. electrochromic structure as claimed in claim 1, it is characterised in that the electrochromic structure is also wrapped
Include：Through the first groove of second conductive layer, the first groove divides second conductive layer
For the first isolated area and the first conducting region；
First light shield layer also blocks the first groove.
6. electrochromic structure as claimed in claim 5, it is characterised in that first light shield layer covers institute
The second conductive layer of first electrode and first isolated area is stated, and fills the first groove.
7. electrochromic structure as claimed in claim 5, it is characterised in that first light shield layer covers institute
State the second face of substrate, the position portion corresponding with first isolated area and the first groove
Point.
8. the electrochromic structure as described in claim 3 or 7, it is characterised in that first light shield layer
Material includes metal.
9. electrochromic structure as claimed in claim 1, it is characterised in that the first conductive layer includes mutual electricity
The second isolated area and the second conducting region of isolation；
The electrochromic structure also includes：Second light shield layer, for blocking the second isolated area.
10. electrochromic structure as claimed in claim 9, it is characterised in that the position of the second electrode with
The position of second isolated area is corresponding, and second light shield layer covers the second electrode, and
Cover the second conductive layer of the first conducting region, the position portion corresponding with second isolated area
Point.
11. electrochromic structure as claimed in claim 9, it is characterised in that second light shield layer covers institute
State the second face of substrate, the position part corresponding with second isolated area.
12. electrochromic structure as claimed in claim 9, it is characterised in that second light shield layer is described
The projected area of substrate surface is more than projected area of second isolated area in the substrate surface.
13. electrochromic structure as claimed in claim 9, it is characterised in that the electrochromic structure is also wrapped
Include：Through the second groove of first conductive layer, the second groove divides first conductive layer
For the second isolated area and the second conducting region；
Second light shield layer also blocks the second groove.
14. electrochromic structure as claimed in claim 13, it is characterised in that the position of the second electrode with
The position of second isolated area is corresponding, second light shield layer cover the second electrode and
Cover the second conductive layer of the first conducting region, position and second isolated area and described second
The corresponding part of groove.
15. electrochromic structure as claimed in claim 13, it is characterised in that second light shield layer covers institute
State the second face of substrate, the position part corresponding with second isolated area and the second groove.
16. electrochromic structure as claimed in claim 9, it is characterised in that first isolated area and described
The width range of second isolated area is 1 micron~500 microns, and first conducting region and described second is passed
The width range for leading area is 1 centimetre~500 centimetres.
17. electrochromic structure as claimed in claim 1, it is characterised in that the substrate includes light-transparent substrate.
18. electrochromic structure as claimed in claim 1, it is characterised in that the electrochromic structure is also wrapped
Include positioned at the barrier layer between the substrate and first conductive layer.
19. electrochromic structure as claimed in claim 1, it is characterised in that first conductive layer and described
The material of second conductive layer includes transparent conductive oxide.
20. a kind of forming method of electrochromic structure, it is characterised in that including：
Substrate is provided, the substrate includes the first face and second face relative with first face；
The first conductive layer formed on the first face of the substrate；
Form the colour change function layer positioned at first conductive layer surface；
The second conductive layer positioned at the colour change function layer surface is formed, second conductive layer includes mutual
The first isolated area being electrically isolated and the first conducting region；
The first electrode formed in the first isolated area of the second conductive layer, and pass through the electrochromism
Layer is electrically connected with first conductive layer；
Formed positioned at second the first conducting region of conductive layer surface second electrode, the second electrode with it is described
Second the first conducting region of conductive layer is electrically connected；
Form the first light shield layer for blocking the first isolated area.
21. forming method as claimed in claim 20, it is characterised in that the first light shield layer covering described the
Second conductive layer of one electrode and first isolated area.
22. forming method as claimed in claim 20, it is characterised in that on the second face of the substrate, position
Put the part corresponding with first isolated area and form first light shield layer.
23. forming method as claimed in claim 20, it is characterised in that first light shield layer is in the substrate
The projected area on surface is more than projected area of first isolated area in the substrate surface.
24. forming method as claimed in claim 20, it is characterised in that the forming method also includes：In shape
Into after second conductive layer, before first electrode is formed, formed and run through second conductive layer
First groove, the first groove by second conductive layer be divided into the first isolated area and first conduction
Area；
First light shield layer also blocks the first groove.
25. forming method as claimed in claim 24, it is characterised in that the first light shield layer covering described the
Second conductive layer of one electrode and first isolated area, and fill the first groove.
26. forming method as claimed in claim 24, it is characterised in that also include：The second of the substrate
Face, the part that position is corresponding with first isolated area and first groove form first shading
Layer.
27. forming method as claimed in claim 20, it is characterised in that the first conductive layer includes being electrically isolated from each other
The second isolated area and the second conducting region；
The forming method also includes：Form the second light shield layer for blocking the second isolated area.
28. forming method as claimed in claim 27, it is characterised in that the position of the second electrode with it is described
The position of second isolated area is corresponding, and second light shield layer covers the second electrode and covering
The second conductive layer, corresponding with second isolated area part of first conducting region.
29. forming method as claimed in claim 27, it is characterised in that on the second face of the substrate,
The position part corresponding with second isolated area forms second light shield layer.
30. forming method as claimed in claim 27, it is characterised in that second light shield layer is in the substrate
The projected area on surface is more than projected area of second isolated area in the substrate surface.
31. forming method as claimed in claim 27, it is characterised in that the forming method also includes：In shape
Into after the first conductive layer, after colour change function layer is formed, formed through first conductive layer
First conductive layer is divided into the second isolated area and the second conducting region by second groove, the second groove；
Second light shield layer also blocks the second groove.
32. forming method as claimed in claim 31, it is characterised in that the position of the second electrode with it is described
The position of second isolated area is corresponding, and second light shield layer covers the second electrode, and covering
The second conductive layer of first conducting region, position and second isolated area and the second groove
Corresponding part.
33. forming method as claimed in claim 31, it is characterised in that on the second face of the substrate, position
Put the part corresponding with second isolated area and the second groove and form second light shield layer.
34. forming method as claimed in claim 27, it is characterised in that first light shield layer or described second
Light shield layer passes through silk-screen printing, vacuum thermal evaporation plated film, vacuum magnetron sputtering coating film, vacuum ionic source
Plated film, the mode of inkjet printing are formed.
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| CN201610084079.XA CN107045243B (en) | 2016-02-06 | 2016-02-06 | Electrochromic structure and forming method thereof |
| PCT/CN2016/081232 WO2017133105A1 (en) | 2016-02-06 | 2016-05-06 | Electrochromic structure and method of forming same |
| US16/075,587 US10732478B2 (en) | 2016-02-06 | 2016-05-06 | Electrochromic structure and method of forming same |
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