CN107037019B - 叠层结构荧光传感器 - Google Patents
叠层结构荧光传感器 Download PDFInfo
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- 238000003475 lamination Methods 0.000 title 1
- 230000003287 optical effect Effects 0.000 claims abstract description 72
- 238000000605 extraction Methods 0.000 claims abstract description 31
- 238000012545 processing Methods 0.000 claims abstract description 14
- 238000002834 transmittance Methods 0.000 claims description 5
- 238000007789 sealing Methods 0.000 claims description 3
- 239000010902 straw Substances 0.000 claims description 3
- 239000000126 substance Substances 0.000 abstract description 16
- 238000001514 detection method Methods 0.000 abstract description 13
- 239000003814 drug Substances 0.000 abstract description 8
- 229940079593 drug Drugs 0.000 abstract description 8
- 230000004044 response Effects 0.000 abstract description 8
- 230000000694 effects Effects 0.000 abstract description 6
- 239000002360 explosive Substances 0.000 abstract description 5
- 230000005284 excitation Effects 0.000 description 22
- 239000000758 substrate Substances 0.000 description 6
- 230000008859 change Effects 0.000 description 5
- 238000001914 filtration Methods 0.000 description 5
- 238000012360 testing method Methods 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- 238000013461 design Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000013307 optical fiber Substances 0.000 description 2
- 230000008832 photodamage Effects 0.000 description 2
- 238000012795 verification Methods 0.000 description 2
- 239000011324 bead Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000004061 bleaching Methods 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000001917 fluorescence detection Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 239000011540 sensing material Substances 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
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-
- G—PHYSICS
- G01—MEASURING; TESTING
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- G01N21/64—Fluorescence; Phosphorescence
- G01N21/645—Specially adapted constructive features of fluorimeters
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- G—PHYSICS
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- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
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- G01N21/77—Systems in which material is subjected to a chemical reaction, the progress or the result of the reaction being investigated by observing the effect on a chemical indicator
-
- G—PHYSICS
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- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
- G01N21/64—Fluorescence; Phosphorescence
- G01N21/6402—Atomic fluorescence; Laser induced fluorescence
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/01—Arrangements or apparatus for facilitating the optical investigation
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
- G01N21/64—Fluorescence; Phosphorescence
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/20—Measuring radiation intensity with scintillation detectors
- G01T1/2006—Measuring radiation intensity with scintillation detectors using a combination of a scintillator and photodetector which measures the means radiation intensity
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/20—Measuring radiation intensity with scintillation detectors
- G01T1/2018—Scintillation-photodiode combinations
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/20—Measuring radiation intensity with scintillation detectors
- G01T1/2018—Scintillation-photodiode combinations
- G01T1/20185—Coupling means between the photodiode and the scintillator, e.g. optical couplings using adhesives with wavelength-shifting fibres
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/20—Measuring radiation intensity with scintillation detectors
- G01T1/2018—Scintillation-photodiode combinations
- G01T1/20186—Position of the photodiode with respect to the incoming radiation, e.g. in the front of, below or sideways the scintillator
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/20—Measuring radiation intensity with scintillation detectors
- G01T1/2018—Scintillation-photodiode combinations
- G01T1/20187—Position of the scintillator with respect to the photodiode, e.g. photodiode surrounding the crystal, the crystal surrounding the photodiode, shape or size of the scintillator
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/20—Measuring radiation intensity with scintillation detectors
- G01T1/2018—Scintillation-photodiode combinations
- G01T1/20188—Auxiliary details, e.g. casings or cooling
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/01—Arrangements or apparatus for facilitating the optical investigation
- G01N2021/0106—General arrangement of respective parts
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/01—Arrangements or apparatus for facilitating the optical investigation
- G01N2021/0106—General arrangement of respective parts
- G01N2021/0112—Apparatus in one mechanical, optical or electronic block
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N2021/1765—Method using an image detector and processing of image signal
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N2021/1765—Method using an image detector and processing of image signal
- G01N2021/1768—Method using an image detector and processing of image signal using photographic film
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N2021/1765—Method using an image detector and processing of image signal
- G01N2021/177—Detector of the video camera type
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N2021/1765—Method using an image detector and processing of image signal
- G01N2021/177—Detector of the video camera type
- G01N2021/1772—Array detector
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N2021/1765—Method using an image detector and processing of image signal
- G01N2021/177—Detector of the video camera type
- G01N2021/1772—Array detector
- G01N2021/1774—Line array detector
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N2021/1765—Method using an image detector and processing of image signal
- G01N2021/177—Detector of the video camera type
- G01N2021/1776—Colour camera
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N2021/1765—Method using an image detector and processing of image signal
- G01N2021/177—Detector of the video camera type
- G01N2021/1778—IIT [intensified image tube]
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
- G01N21/64—Fluorescence; Phosphorescence
- G01N21/645—Specially adapted constructive features of fluorimeters
- G01N2021/6463—Optics
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
- G01N21/64—Fluorescence; Phosphorescence
- G01N21/645—Specially adapted constructive features of fluorimeters
- G01N2021/6463—Optics
- G01N2021/6471—Special filters, filter wheel
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
- G01N21/64—Fluorescence; Phosphorescence
- G01N21/645—Specially adapted constructive features of fluorimeters
- G01N2021/6463—Optics
- G01N2021/6473—In-line geometry
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/75—Systems in which material is subjected to a chemical reaction, the progress or the result of the reaction being investigated
- G01N21/77—Systems in which material is subjected to a chemical reaction, the progress or the result of the reaction being investigated by observing the effect on a chemical indicator
- G01N2021/7756—Sensor type
- G01N2021/7763—Sample through flow
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/75—Systems in which material is subjected to a chemical reaction, the progress or the result of the reaction being investigated
- G01N21/77—Systems in which material is subjected to a chemical reaction, the progress or the result of the reaction being investigated by observing the effect on a chemical indicator
- G01N2021/7769—Measurement method of reaction-produced change in sensor
- G01N2021/7786—Fluorescence
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2201/00—Features of devices classified in G01N21/00
- G01N2201/06—Illumination; Optics
- G01N2201/062—LED's
Abstract
本发明涉及叠层结构荧光传感器,包括能够密封的传感器外壳和嵌装在传感器外壳中的光学传感系统,光学传感系统包括从上往下依次共轴设置的光源、短波通滤光片、气室、传感单元、长波通滤光片组和光信号收集单元,光信号收集单元和信号处理系统相连;传感器外壳上还开设有进气口和抽气口,进气口通过进气通道和气室相连通,气室通过抽气通道和抽气口相连通。本发明体积小,易于阵列化实现同时检测两种或两种以上的被测物,信噪比高,能用于快速检测包括但不限于爆炸物、毒品等微痕量化学品,检测效果好,对非被测物质与被测物质检测时的信号响应可区分度明显,检测稳定准确。
Description
技术领域
本发明属于荧光传感技术领域,具体涉及叠层结构荧光传感器。
背景技术
荧光传感是指利用一定波长范围的光照射某种具有特殊识别功能的敏感单元,激发产生荧 光,当对应的被检测物质与敏感单元接触,并发生相互作用时,使其发出的荧光强度增强或猝 灭,荧光寿命延长或减少,由此可以通过监测荧光信号的变化实现对被检测物质的定性或定量测量。这种技术常常被用于生物和化学传感。目前市面上此类传感器有的为了获得高的光强信 噪比来提高测试灵敏度,在结构上让激发光路与信号光路相互垂直或呈一定的角度,不可避免 的增加了传感元件与光信号收集元件之间的距离,从而需要引入透镜组来提高收集效率,使得 整个传感器体积增大。此外,在结构上对透镜等光学元件的角度、位置布局等也有苛刻要求,极大地限制了传感器的集成和阵列化。在实践上,也可以以光纤作为激发光和信号光的传播媒 介构建荧光传感器,不过光纤横截面积一般仅有几百微米,对光信号的收集范围有限,因此不 得不通过透镜,乃至多组滤光片提高信噪比,从而使传感器整体结构复杂化。这就是为什么性 能好的光纤型荧光传感器一般价格都比较昂贵的原因。因此,有必要研发集结构稳定、信噪比高、体积小、易于阵列化等优点为一身的荧光传感器。
发明内容
本发明的目的在于克服现有技术中存在的问题,提供一种叠层结构荧光传感器,光强信噪 比高、易于阵列化,从而实现同时检测两种或两种以上的被测物。
为了达到上述目的,本发明采用如下技术方案:
包括能够密封的传感器外壳和嵌装在传感器外壳中的光学传感系统,光学传感系统包括从 上往下依次共轴设置的光源、短波通滤光片、气室、传感单元、长波通滤光片组和光信号收集 单元,光信号收集单元和信号处理系统相连;传感器外壳上还开设有进气口和抽气口,进气口通过进气通道和气室相连通,气室通过抽气通道和抽气口相连通。
进一步地,光源为草帽型LED灯、炮弹型LED灯或贴片型LED灯;光源的发散角为7°~30°。
进一步地,传感器外壳包括嵌合式的上层外壳和下层外壳,上层外壳和下层外壳上还开设 有能够连通的螺纹孔,螺纹孔内安装螺钉;光源固定安装在光源固定架上,光源固定架和短波 通滤光片均嵌装在上层外壳内;传感单元、长波通滤光片组和光信号收集单元均嵌装在下层外壳中,信号处理系统和下层外壳的底部密封相连。
进一步地,光信号收集单元采用PIN型的光电二极管。
进一步地,短波通滤光片的透过率大于30%,OD值为4~6。
进一步地,长波通滤光片组包括窄带滤光片与长波通滤光片的组合或者错位窄带滤光片配 合组合;长波通滤光片组的厚度在2~5mm范围内。
进一步地,进气通道的出口和抽气通道的入口与传感单元之间均有10°~50°的夹角,或 者进气通道的出口和抽气通道的入口位于传感单元边缘切线方向正上方0.2~1mm处。
进一步地,光学传感系统为若干个,且在光学传感系统大于一个时,光学传感系统并排嵌 装在传感器外壳中;进气口和抽气口分别位于气室的两侧。
进一步地,抽气口连接微型真空抽气泵;短波通滤光片和气室之间设置有透明的光学窗片。
进一步地,传感单元采用荧光传感薄膜;直径10mm的荧光传感薄膜对应设置体积为50~ 500mm3的气室。
与现有技术相比,本发明具有以下有益的技术效果:
本发明叠层结构荧光传感器涉及的光学元件仅有光源、滤光片和光信号收集单元等,通过 激发光源、短波通滤光片、传感单元、长波通滤光片组,以及光信号收集单元共轴设置,形成 简单稳定的叠层结构,在保证其光强信噪比、响应速率及选择性前提下,长、宽、高均可在2 cm以内,体积小、易于阵列化实现同时检测两种或两种以上的被测物;同时同轴设置缩短了 光源和传感单元之间的距离,利于控制光斑扩散的范围,从而减小了传感单元所需的激发光光强;光信号收集单元与传感单元之间几乎仅有长波通滤光片组的间隔,确保了荧光的收集效率; 长波通滤光片组的使用相较于常规使用的长波通窄带荧光滤光片的滤光能力高出1~2个数量 级,不仅降低了滤光片的制作成本,还使得传感单元发出的荧光仅为LED激发光的几千分之 一甚至更小,并且还有光源红外尾巴、倍频峰等多种杂散光的影响情况下,获得能与常规结构 传感器同样甚至更高的光强信噪比;传感器外壳能够密封,保证传感检测所需的气密环境、光 学条件。本发明信噪比高,能用于快速检测包括但不限于爆炸物、毒品等微痕量化学品,检测 效果好,对非被测物与被测物检测时的信号响应可区分度明显,检测稳定准确。
进一步地,本发明通过控制光源的外形和发散角,同时与各光学元件共轴设置相配合,有 利于提高光强信噪比和激发效率,本发明照射在传感单元上的光强仅需5~30μW,相较于光 源与检测单元成一定角度的常规传感器所需的100μW以上相比,大大的减少了激发光对传感 单元的光漂白和光损伤。
进一步地,本发明通过设置上层外壳和下层外壳,便于安装各元件;且嵌装的方式,也就 是传感器外壳与光学传感系统元件尺寸的契合以及呈台阶分布的结构设计,使整个叠层荧光化 学传感器在没有使用橡胶垫圈的情况下就达到传感所需的气密环境,光学条件,其抗震动、抗冲击性好。
进一步地,本发明通过控制短波通滤光片的透过率和OD值,保证光源对传感单元的荧光 发射波段的截止。
进一步地,本发明通过设置长波通滤光片组,与激发光源的波长分布范围和传感薄膜的荧 光发射范围匹配,提高传感器的光强信噪比、节约成本;还使长波通滤光片组的厚度控制在 2~5mm,减小体积。
进一步地,本发明进气通道的出口和抽气通道的入口与传感单元之间有夹角或一定距离, 以防气流的冲击损伤传感单元,同时避免紧挨阻碍气流在传感单元表面的流动。
进一步地,本发明通过设置多种组合形式的进气口和抽气口,实现高度集成的阵列叠层传 感器,互不干扰的同时或交替检测多种类的物质。
进一步地,本发明通过设置光学窗片,阻止被测气体对短波通滤光片的污染。
进一步地,本发明通过控制荧光传感薄膜对应的气室体积,不影响被测气体在荧光传感薄膜表面的流动性、气体通道的尺寸及传感器本身的灵敏度。
附图说明
图1是叠层结构荧光传感器的结构示意图。
图2是两集成叠层结构荧光传感器的结构示意图。
图3(a)是两集成叠层结构荧光传感器的气道俯视图;图3(b)是两集成叠层结构荧光 传感器的气道右视图。
图4是利用实施例1叠层荧光传感器检测几种常见的毒品的测试结果图。
图5是利用实施例2两集成叠层荧光传感器同时检测几种毒品和爆炸物的结果图。
其中:1-上层外壳;101-下层外壳;2-第一进气口;201-第二进气口;3-抽气口;4-螺纹孔; 5-微型真空抽气泵;6-光源固定架;7-光源;8-短波通滤光片;9-光学窗片;10-气室;11-荧光 传感薄膜;12-长波通滤光片组;13-光电二极管;14-信号处理系统。
具体实施方式
下面结合附图对本发明做进一步详细说明,但本发明不仅限于下述实施的情形。本发明中 以图1中荧光传感薄膜水平设置、第一进气口位于右侧定义相关方向,仅为了更清楚地描述, 而不是对本发明的限定,例如进气口实际可以位于上层外壳的任一个面上;根据待测气体情况, 本发明传感器可以翻转或倒置使用,也就是说使用时荧光传感薄膜不一定处于水平状态。
本发明叠层结构荧光传感器中相关技术术语及其它说明:本发明叠层结构是指激发光源、 短波通滤光片、传感单元、长波通滤光片组,以及光信号收集单元等共轴的一种特殊结构。
光强信噪比是指叠层荧光传感器在有传感薄膜与无传感薄膜工况条件下光强相对值的比 值;响应速率是指传感器对被检测物的响应时间;选择性是指叠层传感器检测被测物与非被测 物时的可区分度。
参见图1和图2,本发明包括能够密封的传感器外壳和设置在传感器外壳中的光学传感系 统,光学传感系统可以是一个或多个,且在光学传感系统大于一个时,光学传感系统并排嵌装 在传感器外壳中。传感器外壳包括上层外壳1和下层外壳101,上层外壳1和下层外壳101上 开设能够连通的螺纹孔4,螺纹孔4内安装螺钉,上层外壳1和下层外壳101之间还设置有内 嵌咬合结构,通过内嵌咬合结构和螺钉将上层外壳1和下层外壳101固定相连。光学传感系统 内嵌于传感器外壳内部,通过精密的传感器外壳内嵌咬合结构与螺纹连接形成传感检测所需的 气密环境、光学条件。
光学传感系统包括从上往下依次共轴设置的光源7、短波通滤光片8、光学窗片9、气室 10、荧光传感薄膜11、长波通滤光片组12、光电二极管13和信号处理系统14,光电二极管 13和信号处理系统14相连;传感器外壳上还开设有气道、进气口和抽气口3,气道包括进气 通道和抽气通道;传感器外壳上的气道与气室10设计为一个无缝连接整体,减小被检测物质 蒸气到荧光传感薄膜11过程中的损耗。气道位列气室10两侧且与气室10相连通:一边的进 气通道与进气口相连通,进气口端设计为漏斗状;另一边抽气通道与抽气口3相连通,抽气口 3与一个微型真空抽气泵5连通。
传感器外壳分为上、下两层:上层外壳1用于安装光源7和短波通滤光片8,并用于形成 气室10及气体通道的布局,光源7通过光源固定架6固定安装在上层外壳1内;下层外壳101 安装荧光传感薄膜11、长波通滤光片组12和光电二极管13,信号处理系统14和下层外壳101 的底部密封相连;上层外壳1和下层外壳101内分别设置有用于安装各部件的台阶孔,各部件 能够嵌装在上层外壳1和下层外壳101内。
与荧光传感薄膜11相近的进气通道与抽气通道与传感膜基底呈10°~50°左右的夹角或 者位于传感膜基底边缘切线方向的正上方0.2~1mm处,气体通道与荧光传感薄膜11不能正 对以防气流的冲击损伤薄膜,也不能紧挨阻碍气流在薄膜表面的流动;与外界环境相接的进气 口、抽气口3可根据需要设计于上层外壳1的任一个面上,只要保证气体通道能够让待测气体 经过气室即可。
比如,光学传感系统为一个时,进气口可以设置在两个位置上,其中第一进气口2开设在 上层外壳1的侧壁上,第二进气口201开设在上层外壳1的顶部,抽气口3开设在上层外壳1 顶部,且进气口和抽气口3分别位于气室10的左右两侧;参见图3(a)和图3(b),光学传 感系统为两个时,进气口开设在上层外壳1的顶部前侧,抽气口3开设在上层外壳1的底部后 侧,且进气口和抽气口3均位于两个光学传感系统之间。
光源7作为荧光传感薄膜11的激发光源,采用LED灯珠,具有可以采用草帽型LED灯、 炮弹型LED灯或贴片型LED灯;其主要发光波长范围尽量与荧光传感薄膜11最佳激发波段 匹配,光源7的发散角为7°~30°。
短波通滤光片8与光源7的距离在3mm以内,以不损失短波通滤光片8的效果为准,短 波通滤光片8针对激发光的透过率大于30%,对荧光传感薄膜11的荧光发射波段的截止深度 要大,一般要求OD值为4~6。
光学窗片9选用透光介质,阻止被测气体对短波通滤光片8的污染。
传感器的气室10大小以不影响被测气体在荧光传感薄膜11表面的流动性、气体通道的尺 寸及传感器本身的灵敏度为准,直径10mm的荧光传感薄膜11对应的气室10大小约50~500 mm3。
荧光传感薄膜11可选用的光学基底有很多,主要原则为对传感膜及荧光检测波段无干扰, 可以传导荧光的光学介质,如玻璃片,对光学基底的光洁度及平整度无要求,将传感材料涂或 化学键合在光学基底上制成膜片,方便快速更换。
长波通滤光片组12的作用是滤掉传感薄膜上的激发光以及倍频光、红外尾巴等杂散光, 通常激发光比荧光的光强值大3~10个数量级甚至更大,通过单一类型的滤光片来提高光强信噪比,往往OD值需要达到6~8,但OD值的增加会造成荧光波段透过率的减小,还会增加 滤光片的厚度及制作成本;本发明中长波通滤光片组12是根据具体的激发光源的波长分布范 围与传感薄膜的荧光发射范围进行选择设计的,包括窄带滤光片与长波通滤光片的组合或者错 位窄带滤光片配合组合等来提高传感器的光强信噪比、节约成本;还使长波通滤光片组12的 厚度控制在2~5mm。
窄带的LED灯有一个主要发光波段,但在主要发光波段附近还存在一些杂散光,一般仅 利用短波通滤光片达不到滤光效果,故需要长波通滤光片组辅助滤光。对于斯托克斯位移大的 传感单元选用一个窄带滤光片和一个长波通滤光片组合就能达到滤光效果,例如激发光在430 nm-500nm,荧光发射在600nm-800nm波段,选用的长波通滤光片组可以是650nm的窄带 滤光片与350nm-600nm截止的长波通滤光片,根据实验验证要求窄带滤光片靠近传感单元; 对于斯托克斯位移小而且激发光在紫外波段,如300nm-400nm之间,荧光发射波段在380nm –470nm之间的传感单元则建议使用错位窄带滤光片,其中错位窄带滤光片组合可以是带宽为 20nm的410nm窄带滤光片和带宽10nm的415nm窄带滤光片,根据实验验证要求波长短的 窄带滤光片靠近传感单元。
长波通滤光片组12与荧光传感薄膜之间有0.2~0.6mm的间隙用于固定滤光片,长波通 滤光片组12与光电二级管13之间距离为0~1mm。
光电二极管13采用PIN型光电二极管。
本发明在保证其光强信噪比、响应速率及选择性前提下,长、宽、高均可在2cm以内, 涉及的光学元件仅有光源7、滤光片、光敏器件,使其结构简单、安装便捷,还可以扩展成同 时检测多类物质的阵列型传感器。
待检测的气体从进气通道的进气口进入,穿过气室10后从抽气通道的抽气口3排出。光 源7发出的光通过短波通滤光片8照射在荧光传感薄膜11上激发产生荧光,经过长波通滤光 片组12滤掉激发光及杂散光后被PIN型的光电二极管13接收。
传感器外壳内部安装光学镜片的孔径与厚度尺寸与光学镜片本身的尺寸保持一致,光学传 感系统元件之间通过尺寸的调控限制其活动范围,确保光学元件的抗震动、冲击力以及荧光传 感所需的遮光条件等。
实施例1
单个的叠层荧光传感器,如图1所示,包括传感器外壳的上层外壳1、下层外壳101及壳 体内的光学传感系统。将光学传感系统的光学元件按照特定的顺序安嵌入传感器外壳的内部, 然后利用螺纹孔4和螺钉固定好上层外壳1与下层外壳101,以及连接在下层外壳101上的信 号处理系统14,这几部分组成叠层荧光传感器的整体。光源7发出的光经过短波通滤光片8 和气室10的滤光扩散后照射在荧光传感薄膜11上激发产生荧光,再经过长波通滤光片组12 滤光后使荧光被PIN型的光电二极管13接收,光电二极管13进行光电信号转换,并将电信号发送给信号处理系统14,信号处理系统14实时监测荧光传感薄膜11上发出的荧光强度变 化。当被检测物质的蒸气经由第一进气口2或者第二进气口201到达气室10与荧光传感薄膜 11发生可逆相互作用,使荧光传感薄膜11发出的荧光强度增强或减弱,通过荧光强度变化的 大小判定检测的结果。
如图4所示,利用叠层荧光传感器检测几种常见的毒品。其中左图为叠层荧光传感器的光 强信噪比;使用涂有10μL浓度为0.05%的荧光传感薄膜在直径为15mm的玻璃片上,即可 使叠层毒品传感器的信噪比达30以上;右图是每隔30秒采集一次待检测物质,采集时间控制 在1~5秒,传感器的响应时间几乎与采样时间同步,图中还对比了叠层传感器在检测非被测物 与被测物时的信号响应可区分度,信号区分明显且稳定准确。
叠层结构荧光传感器照射在荧光传感薄膜上的光强仅为5~30μW,相较于光源与检测单 元成一定角度的常规传感器所需的100μW以上相比(使用Thorlabs公司型号为PM100D的功率计,置于传感薄膜表面测试得到的),大大的减少了激发光对荧光传感薄膜的光漂白、光损 伤。
实施例2
在实际应用中经常需要同时检测两种或两种以上的被测物,比如爆炸物和毒品类。如图2所示,是两集成叠层荧光传感器,包括两集成叠层传感器外壳的上层外壳1、下层外壳101及 两套光学传感系统。根据不同类的被测物质,选用对应的检测用荧光传感薄膜11及对应的光 学元件,然后将光学传感系统的各个光学元件按照特定的顺序安嵌入传感器外壳的内部,然后 利用螺纹孔4和螺钉固定上层外壳1与下层外壳101,以及下层外壳101与信号处理系统14, 这几部分组成两集成叠层荧光传感器的整体。光源7发出的光经过短波通滤光片8和气室10 的滤光扩散后照射在荧光传感薄膜11上激发产生荧光,再经过长波通滤光片组12滤掉激发光 以及其他杂散光后被PIN型的光电二极管13接收,反应在信号处理系统14上,实时监测荧 光传感薄膜11上发出的荧光变化。当被检测物质的蒸气经由第一进气口2分成两股进入两边 的气室10,分别与两边的荧光传感薄膜11同时发生可逆相互作用时,使荧光传感薄膜11发 出的荧光强度增强或减弱,通过荧光强度变化的大小判定检测的结果。
图5是用两集成叠层荧光传感器检测两种爆炸物与两种毒品测试结果图。本发明实施例2 是对实施例1的初步拓展,虽有各自的光学传感系统,但共用一个进气口与抽气口,能实现两 种被测物质的同时检测或相互印证检测,增加了传感器的鉴甑能力。
总之本发明的拓展方向可以是各个传感系统简单的并立,即各自的光学传感系统及气室, 但共用同一个进气口、抽气口;也可以是共用同一个气室、激发光源、光电二极管等实现高度 的整合;也可以是根据需要部分并立,部分整合,最终实现高度集成的阵列叠层传感器,互不干扰的同时或交替检测多种类的物质。
最后,以上所述仅展示了本发明部分实例,凡是参照本发明所提的设计的结构及光学传感 系统所作的变动及拓展,均是本发明涉及的内容。
Claims (7)
1.叠层结构荧光传感器,其特征在于:包括能够密封的传感器外壳和嵌装在传感器外壳中的光学传感系统,光学传感系统包括从上往下依次共轴设置的光源(7)、短波通滤光片(8)、气室(10)、传感单元、长波通滤光片组(12)和光信号收集单元,光信号收集单元和信号处理系统(14)相连;长波通滤光片组(12)包括窄带滤光片与长波通滤光片的组合或者错位窄带滤光片配合组合;长波通滤光片组(12)的厚度在2~ 5 mm范围内;传感器外壳上还开设有进气口和抽气口(3),进气口通过进气通道和气室(10)相连通,气室(10)通过抽气通道和抽气口(3)相连通;
传感器外壳包括嵌合式的上层外壳(1)和下层外壳(101),上层外壳(1)和下层外壳(101)上还开设有能够连通的螺纹孔(4),螺纹孔(4)内安装螺钉;光源(7)固定安装在光源固定架(6)上,光源固定架(6)和短波通滤光片(8)均嵌装在上层外壳(1)内;传感单元、长波通滤光片组(12)和光信号收集单元均嵌装在下层外壳(101)中,信号处理系统(14)和下层外壳(101)的底部密封相连;
进气通道的出口和抽气通道的入口与传感单元之间均有10°~ 50°的夹角,或者进气通道的出口和抽气通道的入口位于传感单元边缘切线方向正上方0.2 ~ 1 mm处。
2.根据权利要求1所述的叠层结构荧光传感器,其特征在于:光源(7)为草帽型LED灯、炮弹型LED灯或贴片型LED灯;光源(7)的发散角为7°~ 30°。
3.根据权利要求1所述的叠层结构荧光传感器,其特征在于:光信号收集单元采用PIN型的光电二极管(13)。
4.根据权利要求1所述的叠层结构荧光传感器,其特征在于:短波通滤光片(8)的透过率大于30%,OD值为4 ~ 6。
5.根据权利要求1所述的叠层结构荧光传感器,其特征在于:光学传感系统为若干个,且在光学传感系统大于一个时,光学传感系统并排嵌装在传感器外壳中;进气口和抽气口(3)分别位于气室(10)的两侧。
6.根据权利要求1所述的叠层结构荧光传感器,其特征在于:抽气口(3)连接微型真空抽气泵(5);短波通滤光片(8)和气室(10)之间设置有透明的光学窗片(9)。
7.根据权利要求1所述的叠层结构荧光传感器,其特征在于:传感单元采用荧光传感薄膜(11);直径10 mm的荧光传感薄膜(11)对应设置体积为50 ~ 500 mm3的气室(10)。
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