CN107017341A - A kind of asymmetric ring-type microelectrode phase-change memory cell and device - Google Patents
A kind of asymmetric ring-type microelectrode phase-change memory cell and device Download PDFInfo
- Publication number
- CN107017341A CN107017341A CN201710192561.XA CN201710192561A CN107017341A CN 107017341 A CN107017341 A CN 107017341A CN 201710192561 A CN201710192561 A CN 201710192561A CN 107017341 A CN107017341 A CN 107017341A
- Authority
- CN
- China
- Prior art keywords
- insulating barrier
- phase
- layer
- memory cell
- aperture
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000004888 barrier function Effects 0.000 claims abstract description 108
- 230000007704 transition Effects 0.000 claims abstract description 66
- 230000006870 function Effects 0.000 claims abstract description 54
- 239000011810 insulating material Substances 0.000 claims abstract description 13
- 239000002184 metal Substances 0.000 claims abstract description 5
- 229910052751 metal Inorganic materials 0.000 claims abstract description 5
- 239000010410 layer Substances 0.000 claims description 111
- 239000000463 material Substances 0.000 claims description 17
- 238000003860 storage Methods 0.000 claims description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 14
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 12
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 12
- 230000009467 reduction Effects 0.000 claims description 12
- 239000004020 conductor Substances 0.000 claims description 11
- 230000009466 transformation Effects 0.000 claims description 9
- 239000004065 semiconductor Substances 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 8
- 229910052681 coesite Inorganic materials 0.000 claims description 7
- 229910052906 cristobalite Inorganic materials 0.000 claims description 7
- 239000000377 silicon dioxide Substances 0.000 claims description 7
- 229910052682 stishovite Inorganic materials 0.000 claims description 7
- 229910052905 tridymite Inorganic materials 0.000 claims description 7
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 6
- 238000010276 construction Methods 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 229910052709 silver Inorganic materials 0.000 claims description 6
- 229910052718 tin Inorganic materials 0.000 claims description 6
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 5
- 230000005611 electricity Effects 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 238000009826 distribution Methods 0.000 claims description 4
- 230000000737 periodic effect Effects 0.000 claims description 4
- 238000009413 insulation Methods 0.000 claims description 3
- 239000002346 layers by function Substances 0.000 claims description 2
- 239000012782 phase change material Substances 0.000 abstract description 25
- 239000007772 electrode material Substances 0.000 abstract description 7
- 230000008859 change Effects 0.000 description 15
- 238000004088 simulation Methods 0.000 description 15
- 239000011799 hole material Substances 0.000 description 9
- 230000000694 effects Effects 0.000 description 7
- 238000001459 lithography Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 238000003780 insertion Methods 0.000 description 4
- 230000037431 insertion Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000004062 sedimentation Methods 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 239000010408 film Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 238000013007 heat curing Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000012774 insulation material Substances 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 241000208340 Araliaceae Species 0.000 description 1
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 description 1
- 235000003140 Panax quinquefolius Nutrition 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000000686 essence Substances 0.000 description 1
- 235000008434 ginseng Nutrition 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000010977 unit operation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/841—Electrodes
Landscapes
- Semiconductor Memories (AREA)
Abstract
The invention discloses a kind of asymmetric ring-type microelectrode phase-change memory cell and device, including lower electrode layer, the first insulating barrier, phase transition function layer, the second insulating barrier, upper electrode layer from the bottom to top；It is metal ring side wall and insulating core that first insulating barrier, which is provided with aperture, aperture,；Phase transition function layer is contacted by the metal ring side wall in the first insulating barrier aperture with bottom electrode；Second insulating barrier is also provided with aperture；Top electrode is contacted by the second insulating barrier aperture with phase transition function layer.Its core texture is characterised by that bottom electrode is ring electrode, and electrode cores are filled by insulating materials；First insulating barrier small hole center line, phase transition function layer center line and the second insulating barrier small hole center line are not arranged on the same straight line.The asymmetric ring-type microelectrode phase-change memory cell and device that the present invention is provided greatly reduce bottom electrode and phase change material contacts area, reduce operation electric current, with preferable thermal property, power consumption can be reduced while retainer member original performance, reduces hot crosstalk.
Description
Technical field
The invention belongs to microelectronic component and Phase change memory technology field, more particularly, to a kind of asymmetric ring-type
Microelectrode phase-change memory cell and device.
Background technology
The structure of phase-changing memory unit has been largely fixed its performance, including geometric configuration, the thickness of phase-change thin film
Degree, thickness of electrode etc..The contact area S of bottom electrode and phase-change material is to influence an important ginseng of phase transition storage performance
Number, with S reduction, the size of phase change region reduces, and operation electric current is also gradually reduced.Improve the level of semiconductor technology (such as
Reduce photoetching process line width) it can effectively reduce contact area, so that reduce operation electric current, but the renewal of technology needs greatly
The cost of amount, therefore operation electric current can be reduced as far as possible in terms of memory cell structure.
For phase transition storage, with the increase of memory capacity, when feature size downsizing to 65nm and it is following when, it is adjacent
Hot cross-interference issue between phase-change memory cell is extremely serious.When the interval between different phase change cells is too small (submicron order), its
In some phase change cells carry out data read-write operation when can produce very high phase transition temperature, due to heat-conduction effect, heat can be right
The phase change cells of neighbouring not operation produce certain influence, raise its temperature, when the temperature of the not operation phase change cells is raised
To a certain extent, it can also undergo phase transition, cause the loss of original information, this is the hot cross-interference issue between phase-changing memory unit.
In order to reduce hot cross-interference issue, just need to heat the contact area between electrode and phase-change material in reduction unit, reduce operation electricity
Stream, makes functional layer local heating, reduces phase change region as far as possible.
Traditional T-type structure phase-change memory cell is as shown in figure 1, the phase transition function layer material between double layer of metal electrode is usual
For (Ge2Sb2Te5) GST, it is around insulating materials SiO2, when adding narrow and sharp pulse between upper/lower electrode, connect with bottom electrode
Tactile phase-change material undergoes phase transition the amorphous state for being changed into high resistant, and so whole unit will appear as high-impedance state, and phase-change material
Contact area S with bottom electrode is smaller, and operation electric current is just smaller.
However, above-mentioned existing solution still has following technical problem：Its minimum dimension is by photolithographic minimum dimension
Limitation, while the thermal property of T-shaped phase change cells is poor, heat utilization efficiency is relatively low, and most of heat is dissipated, and both adds work(
Consumption, also due to hot crosstalk phenomenon can influence the integrated of high-density device cell array.Therefore, how to design a kind of heat resistanceheat resistant crosstalk,
The phase-change memory unit element structure of low operation electric current is to reduce the power consumption of device, it has also become those skilled in the art urgently solve
Certainly the problem of.
The content of the invention
It is an object of the invention to provide a kind of asymmetric ring-type microelectrode phase-change memory cell and device, using the storage
Storage component part, which is made, in unit can reach the hot crosstalk of reduction, reduce the purpose of operation electric current.Wherein ring electrode makes contact area
It is smaller, erasable electric current can be reduced；Meanwhile, the more traditional T-shaped symmetrical structure of unsymmetric structure has preferably thermal property, mutually changes
It is local, so as to effectively reduce hot crosstalk.
The invention provides a kind of asymmetric ring-type microelectrode phase-change memory cell, its film layer structure includes：
The lower electrode layer formed by conductive material；
First insulating barrier on the lower electrode layer surface is attached to, it is small that first insulating barrier offers nanoscale first
Hole, first aperture faces lower electrode layer；
It is attached to the phase transition function layer of first surface of insulating layer；
The second insulating barrier of the phase transition function layer surface is attached to, second insulating barrier offers second orifice；
Be attached to second surface of insulating layer and for conductive material upper electrode layer；
The lower electrode layer is ring electrode, is hollow-core construction, and its profile is U-shaped, and electrode cores are filled by insulating materials；
The center line and described second of the center line of first aperture described in first insulating barrier, phase transition function layer
The center line of second orifice described in insulating barrier is not arranged on the same straight line, and occurs left and right skew.
In embodiments of the present invention, the center line of phase transition function layer and the center line of the first aperture have an offset, energy
Enough effective contacts area for reducing phase-change material and bottom electrode, while bottom electrode is done circlewise, centre is filled with insulating materials,
Contact area is further reduced, to reach the purpose for reducing reset electric currents；Top electrode by horizontal direction insertion unit electrode
The aperture composition of bar and the second insulating barrier；Bottom electrode is then insulated by the electrode strip and central filler of vertical direction insertion unit
The ring electrode composition of material.
Further, lower electrode layer, first insulating barrier, phase transition function layer, second insulating barrier and institute
The thickness of upper electrode layer is stated in 2nm~500nm；The width of first aperture is 10nm~1um；The width of the second orifice
Spend for 10nm~2um；The first aperture inner annular metal sidewall thickness is less than first aperture radius.
Further, lower electrode layer, first insulating barrier, phase transition function layer, second insulating barrier and institute
State upper electrode layer thickness and width and the width of first aperture and the second orifice equal proportion can contract according to actual needs
Put.
Further, the material of phase transition function layer is the combination of IVA, VA and Group VIA element in the periodic table of elements.
Further, the material of the first insulating barrier and second insulating barrier is SiO2、ZrO2、TiO2、Y2O3、Ta2o5、
One kind in amorphous Si or C.
Further, the material of lower electrode layer and the upper electrode layer is in TiW, W, TiN, Ta, Pt, Ag, Cu or CuN
One kind.
Further, lower electrode layer is annular with the area that phase transition function layer is directly contacted, and feature sizes are
50nm and following.
Present invention also offers a kind of memory device being made up of above-mentioned asymmetric ring-type microelectrode phase-change memory cell,
Including：Substrate, semiconductor layer and the alternate stacked structure of insulating barrier, at least one U-shaped ring electrode；The semiconductor layer with
The alternate stacked structure of insulating barrier is located above the substrate, and each semiconductor layer and insulating barrier upper and lower surface and substrate
Upper surface it is parallel；The U-shaped ring electrode runs through first insulating barrier.
In asymmetric ring-type microelectrode phase-change memory cell provided in an embodiment of the present invention, there can also be heat sink Rotating fields
To improve heat production and the radiating condition of unit, and it is finally reached the purpose of hot crosstalk between reduction adjacent cells.This is heat sink Rotating fields
Can be exclusive for each memory cell, or be that whole array or device are co-owned.
Further, the storage body portion of the memory device is by multiple asymmetric ring-type microelectrode phases into array distribution
Become memory cell to constitute.
In the present invention, the memory device that asymmetric ring electrode phase-change memory cell is constituted, each unit bottom electrode is U-shaped
Cyclic structure, center is filled by insulating materials, and the contact area of electrode and phase-change material is nanoscale, asymmetric ring electrode
Phase-change memory cell is greatly reduced operation electric current, improves hot crosstalk, improves storage density, reduction write-in power consumption.
Brief description of the drawings
Fig. 1 is the T-shaped symmetrical phase-changing memory unit longitudinal cross-section axially symmetric structure schematic diagram of tradition.
Fig. 2 is asymmetric ring-type microelectrode phase-changing memory unit longitudinal cross-section structural representation proposed by the present invention.
Fig. 3 is the ordinary electrode phase-change memory cell longitudinal cross-section structural representation designed in specific simulation example 1.
Fig. 4 is that the asymmetric ring electrode phase-change memory cell longitudinal cross-section structure designed in specific simulation example 1 is shown
It is intended to.
Fig. 5 be in the asymmetric ring electrode phase-change memory cell that is designed in specific simulation example 1 phase-change material with
The schematic top plan view of electrode contact surface.
Fig. 6 is the pulse of the ordinary electrode phase-change memory cell that is designed in specific simulation example 1 in pulse width 20ns
The R-I curves obtained under the function of current.
Fig. 7 is the asymmetric ring electrode phase-change memory cell designed in specific simulation example 1 in pulse width 20ns
Pulse current effect under obtained R-I curves.
Fig. 8 be the ordinary electrode phase-change memory cell that is designed in specific simulation example 1 in reset when Temperature Distribution
Figure.
Fig. 9 be the asymmetric ring electrode phase-change memory cell that is designed in specific simulation example 1 in reset when temperature
Distribution map.
Figure 10 is that the asymmetric ring electrode phase-change memory cell longitudinal cross-section structure designed in specific simulation example 2 is shown
It is intended to.
Figure 11 is the asymmetric ring electrode phase-change memory cell phase transition function layer center designed in specific simulation example 2
The offset of line and the first insulating barrier small hole center line is to reset electric currents and the impact effect figure of window value.
Figure 12 is that the asymmetric ring electrode phase-change memory cell longitudinal cross-section structure designed in specific simulation example 3 is shown
It is intended to.
Figure 13 is asymmetric the second insulating barrier of the ring electrode phase-change memory cell aperture designed in specific simulation example 3
The offset of center line and the first insulating barrier small hole center line is to reset electric currents and the impact effect figure of window value.
Figure 14 is the adjacent phase change memory list of asymmetric ring electrode of the addition heat-sink shell designed in specific simulation example 4
First longitudinal cross-section structure chart.
Figure 15 is the adjacent phase-changing memory unit longitudinal cross-section structure of ordinary electrode designed in specific simulation example 4
Figure.
Figure 16 is the adjacent phase change memory of asymmetric ring electrode for being not added with heat-sink shell designed in specific simulation example 4
Unit longitudinal cross-section structure chart.
Embodiment
In order to make the purpose , technical scheme and advantage of the present invention be clearer, below in conjunction with accompanying drawing and three-dimensional hot-die
Intend embodiment, the present invention will be described in further detail.It should be appreciated that specific embodiment described herein is to explain this hair
It is bright, it is not intended to limit the present invention.
The present invention starts with from device architecture, by reducing the contact area of electrode and phase-change material, reduces operation electric current,
Hot crosstalk while reduction write-in power consumption between reduction unit.
As shown in Fig. 2 the asymmetric ring-type microelectrode phase-changing memory unit that the present invention is provided is included from the bottom to top successively
Stacked lower electrode layer, the first insulating barrier, phase transition function layer, the second insulating barrier, upper electrode layer.
Lower electrode layer can be using conductive materials such as TiW, W, TiN, Ta, Pt, Ag, Cu or CuN, and its width L6 scopes are 10nm
~1um, the scope of thickness h 5 is 2nm~500nm.Between nanoscale line width can reduce between phase change cells area and adjacent Unit two
Away from increase storage density.
First insulating barrier is in lower electrode surface, and the first insulating barrier can use SiO2、ZrO2、TiO2、Y2O3、Ta2o5, amorphous
The materials such as Si or C.First dielectric width L4 scopes are 40nm~5um, and the scope of thickness h 4 is 2nm~500nm.First insulating barrier
Aperture is provided with, and aperture faces bottom electrode, aperture width L5 is 10nm~1um.Inside aperture filling conductive material side wall and
Insulating materials core, the thickness of conductive side wall is less than the half of aperture width.The width of first insulating barrier aperture is directly determined down
The contact area of electrode and phase-change material, contact area is smaller, and erasable electric current is smaller needed for unit.
Phase transition function layer is in the first surface of insulating layer, and phase transition function layer can use IVA, VA and VIA in the periodic table of elements
The combination of race's element.Phase transition function slice width degree L3 scopes are 40nm~3um, and the scope of thickness h 3 is 2nm~500nm, phase transition function
Layer is in contact by the conductive side wall in the aperture on the first insulating barrier with lower electrode layer.Phase transition function layer will cover lower insulation
Layer aperture, and width is no more than lower insulating barrier.
Second insulating barrier is in phase transition function layer surface, and the second insulating barrier can use SiO2、ZrO2、TiO2、Y2O3、Ta2o5、
The materials such as amorphous Si or C.Second dielectric width L1 scopes are 40nm~5um, and the scope of thickness h 2 is 2nm~500nm.Second is exhausted
Edge layer is provided with aperture, and aperture width L2 is 10nm~2um.Second insulating barrier aperture makes Top electrode and phase change material contacts, and it is wide
Degree is identical or bigger with the first insulating barrier aperture.
Upper electrode layer is in the second surface of insulating layer, and upper electrode layer passes through the aperture on the second insulating barrier and phase transition function layer
It is in contact.Top electrode can using the conductive material such as TiW, W, TiN, Ta, Pt, Ag, Cu or CuN, its width range be 10nm~
1um, the scope of thickness h 1 is 2nm~500nm.Nanoscale line width can reduce spacing between phase change cells area and adjacent Unit two,
Increase storage density.
The present invention does not have special requirement to the particular location of aperture on upper and lower insulating barrier, as long as ensureing the first insulating barrier
Small hole center line, phase transition function layer center line and the second insulating barrier small hole center line are not arranged on the same straight line, and are occurred left
Right avertence is moved.The center line of the center line of phase-change material and the first insulating barrier aperture has an offset, so can be effective
The contact area for reducing phase-change material and bottom electrode, while bottom electrode is done circlewise, centre is filled with insulating materials, further
Contact area is reduced, to reach the purpose for reducing reset electric currents；Top electrode by horizontal direction insertion unit electrode strip and
The aperture composition of second insulating barrier；Bottom electrode is then by the electrode strip and central filler insulating materials of vertical direction insertion unit
Ring electrode is constituted.
It should be noted that lower electrode layer, the first insulating barrier, phase transition function layer, the second insulating barrier, the width of upper electrode layer
Equal proportion contracting can be carried out according to actual needs with thickness and the first insulating barrier aperture, the width of the second insulating barrier aperture
Put.
Asymmetric ring-type microelectrode phase-change memory cell, can have heat sink Rotating fields to improve heat production and the heat sink strip of unit
Part.This is heat sink, and Rotating fields can be exclusive for each memory cell, or is that whole array or device are co-owned.
A kind of method given below that phase transition storage is prepared with asymmetric ring-type microelectrode phase-change memory cell：
First silicon substrate or Semiconductor substrate (include MOS impurity diffusion zone, drain source area, contact conductor, through hole, or
Person's PN diodes, bipolar transistor etc.) by beamwriter lithography and the conductive lower electrode layer of sputtering sedimentation, the lower electrode layer can
Using conductive materials such as TiW, W, TiN, Ta, Pt, Ag, Cu or CuN.
Then, the surface of established lower electrode layer by beamwriter lithography and heat cure prepare the first insulating barrier and its
Aperture, first insulating barrier can use SiO2、ZrO2、TiO2、Y2O3, the material such as amorphous Si or C.
Then, one layer of thin conductive material, then one layer of insulation material of sputtering sedimentation are plated on the surface of established first insulating barrier
Material, and form ring-type bottom electrode with chemically mechanical polishing polishing.
Then, beamwriter lithography and sputtering sedimentation phase transformation work(are passed through on the surface for having formed the first insulating barrier of ring electrode
Ergosphere, the phase transition function layer can use the combination of IVA, VA and Group VIA element in the periodic table of elements.
Then, the surface of established phase transition function layer by beamwriter lithography and heat cure prepare the second insulating barrier and
Its aperture, second insulating barrier can use SiO2、ZrO2、TiO2、Y2O3, the material such as amorphous Si or C.
Then, beamwriter lithography and the conductive Top electrode of sputtering sedimentation are passed through on the surface of established second insulating barrier
Layer, upper electrode layer can be using conductive materials such as TiW, W, TiN, Ta, Pt, Ag, Cu or CuN.
Embodiment 1：
In the present embodiment, the asymmetric ring electrode phase-change memory cell longitudinal cross-section designed by Three Dimensional Thermal analog simulation
Structure chart is as shown in figure 4, the top view of phase-change material and bottom electrode contact surface is as shown in figure 5, ordinary electrode phase-change memory cell
Longitudinal cross-section structure chart is as shown in Figure 3.Discuss asymmetric ring electrode structure with general T type electrode structure to reset electric currents
Influence.Whole asymmetric ring electrode phase-change memory cell is shaped as cuboid；First insulating barrier aperture, the second insulating barrier are small
Hole and phase-change material are cylinder.H5 is the thickness of lower electrode layer in Fig. 4, and h4 is ring electrode aperture in the first insulating barrier
Thickness, r is the insulating materials radius that ring electrode small hole center is filled, and h2 is the thickness of the second insulating barrier aperture, and h1 is upper
The thickness of electrode layer, h3 is the thickness of phase transition function layer, and characteristic size L6 is the radius of the first insulating barrier aperture, and L2 is second exhausted
The radius of edge layer aperture, L3 is phase transition function layer radius, and s is phase transition function layer center line and the first insulating barrier small hole center line
Offset, t is the offset of the second insulating barrier small hole center line and the first insulating barrier small hole center line.
Ordinary electrode phase-change memory cell be T-type structure, the first insulating barrier small hole center line, phase transition function layer center line and
Second insulating barrier small hole center line is on same straight line, and upper/lower electrode is solid construction, and structure is integrally symmetrical.Figure
H5 is the thickness of lower electrode layer in 3, and h4 is the thickness of the first insulating barrier, and h2 is the thickness of the second insulating barrier, and h1 is upper electrode layer
Thickness, h3 be phase transition function layer thickness, characteristic size L6 be the first insulating barrier aperture radius, L2 be the second insulating barrier it is small
The radius in hole, L3 is phase transition function layer radius.
The h2=h1=h5=h3=10nm of two kinds of structures, h4=100nm, L3=30nm, characteristic size L2=L6=
22nm.Offset s=of the asymmetric ring electrode structural phase transition functional layer center line away from the first insulating barrier small hole center line
8nm, the second insulating barrier small hole center line the offset t=22nm away from the first insulating barrier small hole center line, insulating materials radius r
=6nm.Phase-change material in two kinds of structures selects GST, and thickness is identical.
The resistance value of above-mentioned normal cells structure and asymmetric ring electrode structure with pulse current I change such as Fig. 6 and
Shown in Fig. 7, pulse width is 20ns.From fig. 6 it can be seen that when current pulse amplitude I is less than 16.15uA, normal cells
Resistance have almost no change, illustrate that the temperature of now phase-change material and bottom electrode contact position does not reach phase transition temperature (GST
Phase transition temperature be 300 DEG C, be a kind of physical characteristic of phase-change material), phase transformation does not take place for phase-change material；Work as electric current
When pulse amplitude I is more than 16.75uA, the resistance of unit starts rapidly to increase, and illustrates now phase-change material and bottom electrode contact position
Temperature have begun to exceed phase transition temperature, the phase-change material of part is changed into amorphous state；When current pulse amplitude I continues to increase
During to more than 17.81uA, the resistance value of unit is almost unchanged, illustrates now phase-change material complete phase transformation, resistance value is no longer
Increase.Therefore power taking resistance completes the current pulse amplitude I=17.81uA at saltus step as the reset electric currents of normal cells.Together
Sample, it can be seen from figure 7 that the current pulse amplitude I=8.34uA that power taking resistance is completed at saltus step is used as asymmetric ring electrode
The reset electric currents of unit.Above-mentioned curve shows that the reset current pulse amplitudes to the normal cells structure are 17.81uA,
The reset current pulse amplitudes of asymmetric ring electrode structure are 8.34uA.As can be seen here, the phase of asymmetric ring electrode structure
Power consumption needed for becoming memory cell reset operations is relatively low.
The temperature profile of above-mentioned ordinary construction and asymmetric ring electrode structure in reset is respectively such as Fig. 8 and Fig. 9 institutes
Show.From above-mentioned it can be seen from the figure that, normal cells are applied with the reset current impulses that amplitude is 17.81uA, to asymmetric ring-type
It is highest temperature area that electrode unit, which applies red area in the reset current impulses that amplitude is 8.34uA, figure, therefore described non-right
Ring electrode structure is claimed to apply smaller current impulse with regard to higher temperature can be reached, this is due to phase-change material and bottom electrode
Contact area, which reduces, causes current density increase, and heat production is more concentrated, and so relatively low electric current can just cause covering bottom electrode
Phase-change material phase transformation completes reset processes.
Embodiment 2：
The present embodiment discusses that phase transition function layer center line and the first insulating barrier center line are inclined in asymmetric ring electrode structure
Influences of the shifting amount s to reset electric currents.Designed asymmetric ring electrode phase-change memory cell longitudinal cross-section structure chart such as Figure 10
It is shown.Facilitate the center line of the second insulating barrier aperture and the center line of phase transition function layer to be to overlap for analysis, i.e., second
Offset t and phase transition function the layer center line of the center line of insulating barrier aperture and the first insulating barrier small hole center line and the first insulation
The offset s of layer small hole center line is equal.The thickness of lower electrode layer is h5=10nm, and ring electrode is small in the first insulating barrier
The thickness in hole is h4=100nm, and the insulating materials radius of ring electrode small hole center filling is r=6nm, the thickness in Top electrode hole
For h2=10nm, the thickness of upper electrode layer is h1=10nm, phase transition function layer a diameter of L3=30nm, characteristic size L2=L6=
22nm。
The phase transition function layer center line of above-mentioned asymmetric ring electrode phase-change memory cell is away from the first insulating barrier center line
Offset s it is as shown in figure 11 to the impact effect figure of reset electric currents and window value.As can be seen from the figure with phase transformation work(
Ergosphere offset s increase, reset electric currents are strongly reduced, and this is due to the skew of phase transition function layer, itself and bottom electrode
Contact area S is also strongly reduced.And the skew of phase transition function layer can make it that current path L is elongated, S reduces, and L increases can cause
Resistance before unit phase transformation becomes big, while the reduction of contact area causes phase change region to diminish, the resistance after such unit phase transformation
Also it can diminish, eventually cause the significantly reduction of window value.Therefore phase transition function layer center line is away from the first insulating barrier center line
Offset can not be too big.
Embodiment 3：
The present embodiment discusses that the second insulating barrier center line and the first insulating barrier center line are inclined in asymmetric ring electrode structure
Influences of the shifting amount t to reset electric currents.Designed asymmetric ring electrode phase-change memory cell longitudinal cross-section structure chart such as Figure 12
It is shown.The offset s=15nm of phase transition function layer center line and the first insulating barrier small hole center line, the thickness of lower electrode layer is h5
The thickness of ring electrode aperture is h4=100nm, the insulation material of ring electrode small hole center filling in=10nm, the first insulating barrier
Material radius is r=6nm, and the thickness in Top electrode hole is h2=10nm, and the thickness of upper electrode layer is h1=10nm, and phase transition function layer is straight
Footpath is L3=30nm, characteristic size L2=L6=30nm.
Second insulating barrier small hole center line of above-mentioned asymmetric ring electrode phase-change memory cell is small away from the first insulating barrier
The offset t of centerline hole is as shown in figure 13 to the impact effect figure of reset current pulse amplitudes and window value.Can from figure
To find out that window value is gradually lowered as the skew reset electric currents of the second insulating barrier small hole center line are gradually reduced.Due to electricity
Stream flows into phase transition function layer from the second insulating barrier aperture, and level want before bottom electrode is reached by phase transition function layer, therefore the
The increase of two insulating barrier aperture offsets can cause the growth of current path so that the resistance that phase transition function layer is shown becomes big,
Reset current reductions.As can be seen here, asymmetric ring-type microelectrode structure can effectively reduce reset electric currents.
Embodiment 4：
The asymmetric ring electrode phase transition storage adjacent cells longitudinal direction of addition heat-sink shell designed in the present embodiment
Cross section structure figure is as shown in figure 14.Ordinary electrode phase transition storage adjacent cells longitudinal cross-section structure chart is as shown in figure 15.Do not add
Plus the asymmetric ring electrode phase transition storage adjacent cells longitudinal cross-section structure chart of heat-sink shell is as shown in figure 16.Heat-sink shell is used
Material be SnO2, its thickness is 50nm.Unit spacing c is 77nm.In phase transition function layer center line and the first insulating barrier aperture
The offset t=of the offset s=18nm of heart line, the second insulating barrier small hole center line and the first insulating barrier small hole center line
22nm, the thickness of lower electrode layer is that the thickness of ring electrode aperture in 10nm, the first insulating barrier is 100nm, ring electrode aperture
The insulating materials radius of center-filled is r=6nm, and phase transition function layer material is identical in three kinds of structures, and thickness is 10nm, upper electricity
The thickness in pole hole is 10nm, and the thickness of upper electrode layer is 10nm, characteristic size L5=22nm.
Width is applied for 20ns to the asymmetric ring electrode phase-change memory cell of the addition heat-sink shell, amplitude is different
Current impulse causes the maximum temperature of working cell to reach 900 DEG C, and the maximum temperature of adjacent unit is 115.57 DEG C, working cell
Reset current pulse amplitudes be 15.83uA.
It is 20ns to apply width to the ordinary electrode phase-change memory cell, and the different current impulse of amplitude causes job note
The maximum temperature of member reaches 900 DEG C, and the maximum temperature of adjacent unit is 402 DEG C, and the reset current pulse amplitudes of working cell are
24.03uA。
It is 20ns to apply width to the asymmetric ring electrode phase-change memory cell for being not added with heat-sink shell, and amplitude is different
Current impulse make it that the maximum temperature of working cell reaches 900 DEG C, the maximum temperature of adjacent unit is 307.30 DEG C, job note
The reset current pulse amplitudes of member are 11.95uA.
Working cell is carried out in reset operating process, the maximum temperature of adjacent unit is much larger than phase transformation in ordinary construction
The crystallization temperature (125 DEG C) of material, illustrates there is serious hot crosstalk between unit.Asymmetric ring electrode structure is due to heating
Part concentrates on the place contacted with bottom electrode, and more away from neighbouring unit, therefore the maximum temperature of adjacent unit has dropped
It is low.Increase heat-sink shell causes the maximum temperature of adjacent unit to be less than the crystallization temperature of phase-change material, compared to being not added with heat-sink shell
Situation reduces 62.4%, effectively reduces the hot crosstalk between adjacent cells, although while reset electric currents can be caused somewhat to increase
(unit is conducive to radiate because of heat-sink shell) greatly, but also the operation electric current than ordinary construction reduces 34.1%.Thus, it is this
Asymmetric ring electrode structure has heat resistanceheat resistant crosstalk, reduces the effect of reset electric currents.Meanwhile, this asymmetric ring electrode knot
Structure can also add heat-sink shell further to reduce hot crosstalk.
As can be seen here, for the phase-change memory cell or device of the asymmetric ring electrode structure, increase can be passed through
Heat sink Rotating fields are finally reached the mesh of hot crosstalk between reduction adjacent cells to improve heat production and the radiating condition of unit or device
's.It is whole array or the jointly owned heat sink layer film of device that increased heat sink Rotating fields, which are one layer, in the present embodiment, in reality
In the phase-change memory cell or device on border, this is heat sink, and Rotating fields can be exclusive for each memory cell, is each separate storage list
A part in first film layer structure.
Conceive more than, the present invention can effectively reduce the hot crosstalk between VHD phase-changing memory unit, and drop
Low unit operation electric current.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all essences in the present invention
Any modifications, equivalent substitutions and improvements made within refreshing and principle etc., should be included in the scope of the protection.
Claims (10)
1. a kind of asymmetric ring-type microelectrode phase-change memory cell, it is characterised in that its film layer structure includes：
The lower electrode layer formed by conductive material；
First insulating barrier on the lower electrode layer surface is attached to, first insulating barrier offers the aperture of nanoscale first, institute
State the first aperture and face lower electrode layer；
It is attached to the phase transition function layer of first surface of insulating layer；
The second insulating barrier of the phase transition function layer surface is attached to, second insulating barrier offers second orifice；
Be attached to second surface of insulating layer and for conductive material upper electrode layer；
The lower electrode layer is ring electrode, is hollow-core construction, and its profile is U-shaped, and electrode cores are filled by insulating materials；
The center line of first aperture described in first insulating barrier, the center line of phase transition function layer and second insulation
The center line of second orifice is not arranged on the same straight line described in layer, occurs left and right skew.
2. asymmetric ring-type microelectrode phase-change memory cell as described in claim 1, it is characterised in that the bottom electrode
Layer, first insulating barrier, the phase transition function layer, second insulating barrier and the upper electrode layer thickness 2nm~
500nm；The width of first aperture is 10nm~1um；The width of the second orifice is 10nm~2um；Described first is small
Hole inner annular metal sidewall thickness is less than first aperture radius.
3. asymmetric ring-type microelectrode phase-change memory cell as claimed in claim 1 or 2, it is characterised in that the bottom electrode
Layer, first insulating barrier, the phase transition function layer, second insulating barrier and the upper electrode layer thickness and width with it is described
The width of first aperture and the second orifice equal proportion can be scaled according to actual needs.
4. the asymmetric ring-type microelectrode phase-change memory cell as described in claim 1 and 2, it is characterised in that the phase transformation
The material of functional layer is the combination of IVA, VA and Group VIA element in the periodic table of elements.
5. the asymmetric ring-type microelectrode phase-change memory cell as described in claim 1 and 2, it is characterised in that described first
The material of insulating barrier and second insulating barrier is SiO2、ZrO2、TiO2、Y2O3、Ta2o5, one kind in amorphous Si or C.
6. the asymmetric ring-type microelectrode phase-change memory cell as described in claim 1 and 2, it is characterised in that the lower electricity
The material of pole layer and the upper electrode layer is one kind in TiW, W, TiN, Ta, Pt, Ag, Cu or CuN.
7. the asymmetric ring-type microelectrode phase-change memory cell as described in claim 1 and 2, it is characterised in that the lower electricity
Pole layer is annular with the area that phase transition function layer is directly contacted, and feature sizes are 50nm and following.
8. the memory device that a kind of asymmetric ring-type microelectrode phase-change memory cell by described in claim 1 is constituted, including：Ground
Location decoder, storage body portion and control circuit；Characterized in that, the storage body portion includes：Substrate, semiconductor layer with absolutely
The alternate stacked structure of edge layer, at least one U-shaped ring electrode；The semiconductor layer and insulating barrier alternate stacked structure position
Above the substrate, and the upper and lower surface of each semiconductor layer and insulating barrier is parallel with the upper surface of substrate；It is described U-shaped
Ring electrode runs through first insulating barrier.
9. memory device as claimed in claim 8, it is characterised in that also include：Heat sink Rotating fields, the production for improving unit
Heat and radiating condition and the purpose for reaching hot crosstalk between reduction adjacent cells.
10. memory device as claimed in claim 8, it is characterised in that the storage body portion is by into many of array distribution
Individual asymmetric ring-type microelectrode phase-change memory cell is constituted.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710192561.XA CN107017341B (en) | 2017-03-28 | 2017-03-28 | Asymmetric annular microelectrode phase change memory unit and device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710192561.XA CN107017341B (en) | 2017-03-28 | 2017-03-28 | Asymmetric annular microelectrode phase change memory unit and device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107017341A true CN107017341A (en) | 2017-08-04 |
| CN107017341B CN107017341B (en) | 2020-09-25 |
Family
ID=59445841
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710192561.XA Active CN107017341B (en) | 2017-03-28 | 2017-03-28 | Asymmetric annular microelectrode phase change memory unit and device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107017341B (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109786550A (en) * | 2019-03-18 | 2019-05-21 | 江苏时代全芯存储科技股份有限公司 | Phase-change memory and its manufacturing method |
| CN110635030A (en) * | 2019-09-24 | 2019-12-31 | 华中科技大学 | Vertical electrode configuration structure for nanoscale phase-change memory cells |
| CN110767801A (en) * | 2019-09-24 | 2020-02-07 | 华中科技大学 | Processing method of vertical electrode configuration structure of nanoscale phase change memory unit |
| CN112736198A (en) * | 2020-12-31 | 2021-04-30 | 上海集成电路装备材料产业创新中心有限公司 | Resistive random access memory and preparation method thereof |
| CN112909160A (en) * | 2021-01-05 | 2021-06-04 | 华中科技大学 | Phase change memory cell with low operation power consumption and preparation method thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5177567A (en) * | 1991-07-19 | 1993-01-05 | Energy Conversion Devices, Inc. | Thin-film structure for chalcogenide electrical switching devices and process therefor |
| CN1457058A (en) * | 2002-05-10 | 2003-11-19 | 惠普公司 | Phase change material electronic memory structure and forming method thereof |
| CN102064276A (en) * | 2010-11-01 | 2011-05-18 | 华中科技大学 | Asymmetric phase-change memory unit and element |
| US20150090949A1 (en) * | 2013-09-30 | 2015-04-02 | Taiwan Semiconductor Manufacturing Co., Ltd. | Rram cell structure with laterally offset beva/teva |
| CN106298832A (en) * | 2015-06-11 | 2017-01-04 | 复旦大学 | A kind of non-volatile memory device and manufacture method |
-
2017
- 2017-03-28 CN CN201710192561.XA patent/CN107017341B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5177567A (en) * | 1991-07-19 | 1993-01-05 | Energy Conversion Devices, Inc. | Thin-film structure for chalcogenide electrical switching devices and process therefor |
| CN1457058A (en) * | 2002-05-10 | 2003-11-19 | 惠普公司 | Phase change material electronic memory structure and forming method thereof |
| CN102064276A (en) * | 2010-11-01 | 2011-05-18 | 华中科技大学 | Asymmetric phase-change memory unit and element |
| US20150090949A1 (en) * | 2013-09-30 | 2015-04-02 | Taiwan Semiconductor Manufacturing Co., Ltd. | Rram cell structure with laterally offset beva/teva |
| CN106298832A (en) * | 2015-06-11 | 2017-01-04 | 复旦大学 | A kind of non-volatile memory device and manufacture method |
Non-Patent Citations (2)
| Title |
|---|
| GUELTIG, M, ET AL.: "《High Frequency Thermal Energy Harvesting Using Magnetic Shape Memory Films》", 《ADVANCED ENERGY MATERIALS》 * |
| 刘畅: "《相变存储器温度特性及阵列热串扰研究》", 《华中科技大学硕士论文》 * |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109786550A (en) * | 2019-03-18 | 2019-05-21 | 江苏时代全芯存储科技股份有限公司 | Phase-change memory and its manufacturing method |
| CN109786550B (en) * | 2019-03-18 | 2024-04-05 | 北京时代全芯存储技术股份有限公司 | Phase change memory and method for manufacturing the same |
| CN110635030A (en) * | 2019-09-24 | 2019-12-31 | 华中科技大学 | Vertical electrode configuration structure for nanoscale phase-change memory cells |
| CN110767801A (en) * | 2019-09-24 | 2020-02-07 | 华中科技大学 | Processing method of vertical electrode configuration structure of nanoscale phase change memory unit |
| CN112736198A (en) * | 2020-12-31 | 2021-04-30 | 上海集成电路装备材料产业创新中心有限公司 | Resistive random access memory and preparation method thereof |
| CN112909160A (en) * | 2021-01-05 | 2021-06-04 | 华中科技大学 | Phase change memory cell with low operation power consumption and preparation method thereof |
| CN112909160B (en) * | 2021-01-05 | 2022-04-08 | 华中科技大学 | Phase change memory cell with low operation power consumption and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107017341B (en) | 2020-09-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN107017341A (en) | A kind of asymmetric ring-type microelectrode phase-change memory cell and device | |
| WO2017084237A1 (en) | Three-dimensional memory and preparation method therefor | |
| US9276202B2 (en) | Phase-change storage unit containing TiSiN material layer and method for preparing the same | |
| CN102280465B (en) | Resistive random access memory device and manufacturing method thereof | |
| WO2021042422A1 (en) | Three-dimensional stacked phase change memory and preparation method therefor | |
| CN104051615A (en) | Low form voltage resistive random access memory (rram) | |
| CN108807667B (en) | Three-dimensional stacked memory and preparation method thereof | |
| KR20150021362A (en) | Semiconductor Device And Method of Manufacturing The same | |
| US9118008B2 (en) | Field focusing features in a ReRAM cell | |
| US20160293842A1 (en) | Forming self-aligned conductive lines for resistive random access memories | |
| WO2012100502A1 (en) | Nonvolatile memory unit and memory device | |
| CN102148329B (en) | Resistance conversion memory structure and manufacturing method thereof | |
| WO2016101246A1 (en) | Self-gating resistance random access memory unit and manufacturing method therefor | |
| CN105870321A (en) | Nonlinear self-rectifying resistive random access memory and preparation method therefor | |
| CN111029362B (en) | Preparation method of three-dimensional integrated circuit structure of high-density phase change memory | |
| CN106299112B (en) | Multi-state phase-change memory unit element and preparation method thereof | |
| CN103137860A (en) | Nonvolatile three-dimensional semiconductor memory device and preparation method thereof | |
| CN102969328B (en) | Resistance variant memory crossover array structure and preparation method thereof | |
| CN103904214B (en) | A kind of two-dimentional phase change memory unit structure and its manufacture method | |
| US20130320284A1 (en) | Field focusing features in a reram cell | |
| CN103594622A (en) | High-consistency resistive random access memory structure and manufacturing method thereof | |
| CN103579499A (en) | Resistive random access memory device with rectification characteristic and manufacturing method thereof | |
| CN103078053A (en) | Multi-value resistive random access memory (RRAM) and manufacturing method thereof | |
| CN105405972A (en) | Preparation method of three-dimensional resistive random access memory retaining air layer | |
| CN102522418B (en) | Self-rectifying resistance random access memory with cross array structure and preparation method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |