CN107017293A - 一种具有双凹陷AlGaN势垒层的AlGaN/GaN异质结场效应晶体管 - Google Patents
一种具有双凹陷AlGaN势垒层的AlGaN/GaN异质结场效应晶体管 Download PDFInfo
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Abstract
本发明公开了一种具有双凹陷AlGaN势垒层的AlGaN/GaN异质结场效应晶体管，结构自下而上包括：半绝缘衬底、AlN成核层、GaN缓冲层和AlGaN势垒层，其中，所述AlGaN势垒层的上表面的两侧分别设有源电极和漏电极、源电极和漏电极之间且靠近源电极处设有栅电极，在栅电极的源侧区域一部分AlGaN势垒层向下凹陷形成凹陷栅源势垒层区域，在栅电极的漏侧区域一部分AlGaN势垒层向下凹陷形成凹陷栅漏势垒层区域。本发明的有益之处在于：(1)跨导饱和区扩展；(2)击穿电压提高；(3)频率特性改善；(4)微波输出特性增强。
Description
技术领域
本发明涉及一种AlGaN/GaN异质结场效应晶体管，具体涉及一种具有双凹陷AlGaN势垒层的AlGaN/GaN异质结场效应晶体管，属于场效应晶体管技术领域。
背景技术
氮化镓(GaN)作为第三代宽禁带半导体材料，其所具有的高电子饱和速度、高耐压性、抗辐照、耐高温等特点，弥补了传统硅材料和砷化镓材料在大功率密度、高温、高频应用领域中的不足。同时，GaN材料所具备的优越的功率品质因数，使得以GaN为基础的AlGaN/GaN高电子迁移率晶体管(HEMT)，在微波大功率应用上，有着更为广阔的发展前景。
目前，基于GaN HEMT的微波功率放大器，多是采用外围电路对功率管的调控以及补偿等方式来实现高效率的输出环境。随着无线通讯系统、相控雷达、航空航天等领域的发展，对微波功率放大器的要求越来越高，常规GaN HEMT器件结构耐压低、寄生电容大以及跨导饱和区窄等特点，严重影响着器件大功率密度和高附加效率的输出，制约着微波功率放大器的整体性能。
发明内容
为解决现有技术的不足，本发明的目的在于提供一种耐压高、寄生电容低、跨导饱和区宽的AlGaN/GaN异质结场效应晶体管，从而提高器件的射频输出特性，使器件具备高能效的输出能力。
为了实现上述目标，本发明采用如下的技术方案：
一种具有双凹陷AlGaN势垒层的AlGaN/GaN异质结场效应晶体管，结构自下而上包括：半绝缘衬底、AlN成核层、GaN缓冲层和AlGaN势垒层，其特征在于，前述AlGaN势垒层的上表面的两侧分别设有源电极和漏电极、源电极和漏电极之间且靠近源电极处设有栅电极，在栅电极的源侧区域一部分AlGaN势垒层向下凹陷形成凹陷栅源势垒层区域，在栅电极的漏侧区域一部分AlGaN势垒层向下凹陷形成凹陷栅漏势垒层区域。
前述的具有双凹陷AlGaN势垒层的AlGaN/GaN异质结场效应晶体管，其特征在于，前述凹陷栅源势垒层区域和凹陷栅漏势垒层区域均是通过在AlGaN势垒层的表面进行光刻、刻蚀形成的。
前述的具有双凹陷AlGaN势垒层的AlGaN/GaN异质结场效应晶体管，其特征在于，前述凹陷栅源势垒层区域的长度为0.5μm、刻蚀深度为5nm，前述凹陷栅漏势垒层区域的长度为0.6μm、刻蚀深度为4nm。
前述的具有双凹陷AlGaN势垒层的AlGaN/GaN异质结场效应晶体管，其特征在于，前述栅电极的长度为1.0μm，栅源间距为1μm，栅漏间距为2.5μm。
前述的具有双凹陷AlGaN势垒层的AlGaN/GaN异质结场效应晶体管，其特征在于，前述栅电极通过肖特基接触与AlGaN势垒层相连，前述源电极和漏电极均通过欧姆接触与AlGaN势垒层相连。
前述的具有双凹陷AlGaN势垒层的AlGaN/GaN异质结场效应晶体管，其特征在于，前述GaN缓冲层具有n型电阻特性或半绝缘特性。
前述的具有双凹陷AlGaN势垒层的AlGaN/GaN异质结场效应晶体管，其特征在于，前述半绝缘衬底为硅衬底、碳化硅衬底或蓝宝石衬底。
本发明的有益之处在于：
一、跨导饱和区扩展
凹陷栅源势垒层区域和凹陷栅漏势垒层区域的存在，使得在栅下沟道两侧形成了高阻区域，对沟道电流的增长起到了缓冲作用，使得跨导接近饱和区后，随着栅源电压进一步升高，跨导增长的速度减缓，跨导不会处于急速上升和急速下降的状态，跨导饱和区得到了有效延长。
与常规GaN HEMT相比，具有双凹陷AlGaN势垒层的GaN HEMT拥有更宽的饱和跨导区间。
二、击穿电压提高
由于凹陷栅漏势垒层区域的存在，其有效的改善了栅电极漏侧边缘的电场集中效应，所以等势线分布更加均匀。
同时，栅电极漏侧AlGaN势垒区的向下凹陷，抑制了栅下耗尽层往漏极的延展，在一定漏压下，减小了电子从肖特基栅注入到表面的概率，降低了表面泄露电流。
所以与常规GaN HEMT相比，具有双凹陷AlGaN势垒层的GaN HEMT能够承受更大的漏极击穿电压，提高了器件的耐压性能。
三、频率特性改善
对于具有双凹陷AlGaN势垒层的GaN HEMT，栅电极两侧凹陷势垒层区域有效的抑制了栅下耗尽层对源/漏极区域的延伸，使得其拥有比常规结构更小的栅源电容和栅漏电容。
仿真结果显示，具有双凹陷AlGaN势垒层的GaN HEMT的最大振荡频率达到64GHz，比常规结构增长了12.3％，单边功率增益和最大可获得增益比常规GaN HEMT增长了1.2dB和0.8dB，仿真结果如图2所示。
四、微波输出特性增强
更低的寄生栅源、栅漏电容，更宽的跨导饱和区域以及优异的频率特性，增强了器件的功率、效率输出能力。
微波特性仿真验证，在S波段，具有双凹陷AlGaN势垒层的GaN HEMT的最大功率附加效率和饱和输出功率密度均高于常规GaN HEMT的输出能力，如图3所示。
附图说明
图1是本发明的具有双凹陷AlGaN势垒层的AlGaN/GaN异质结场效应晶体管的剖面结构示意图；
图2是常规GaN HEMT器件与具有双凹陷AlGaN势垒层GaN HEMT器件的小信号高频特性曲线对比图；
图3是常规GaN HEMT器件与具有双凹陷AlGaN势垒层GaN HEMT器件的微波输出特性对比图；
图4是本发明的具有双凹陷AlGaN势垒层的AlGaN/GaN异质结场效应晶体管的制作流程图。
图中附图标记的含义：1-半绝缘衬底、2-AlN成核层、3-GaN缓冲层、4-AlGaN势垒层、5-源电极、6-漏电极、7-栅电极、8-凹陷栅源势垒层区域、9-凹陷栅漏势垒层区域。
具体实施方式
为了提高和改善GaN HEMT的微波输出特性，使其具备高能效的输出能力，我们在常规GaN HEMT器件结构的基础上进行了改进。
以下结合附图和具体实施例对本发明作具体的介绍。
一、改进后的AlGaN/GaN异质结场效应晶体管的结构
参照图1，本发明的具有双凹陷AlGaN势垒层的AlGaN/GaN异质结场效应晶体管，结构自下而上包括：半绝缘衬底1、AlN成核层2、GaN缓冲层3和AlGaN势垒层4。
半绝缘衬底1为硅衬底、碳化硅衬底或蓝宝石衬底。
GaN缓冲层3具有n型电阻特性或半绝缘特性。
AlGaN势垒层4的上表面的两侧分别设有源电极5和漏电极6，二者均通过欧姆接触与AlGaN势垒层4相连，源电极5和漏电极6之间且靠近源电极5处设有栅电极7，栅电极7通过肖特基接触与AlGaN势垒层4相连。
在栅电极7的源侧区域，一部分AlGaN势垒层4向下凹陷形成凹陷栅源势垒层区域8；在栅电极7的漏侧区域，一部分AlGaN势垒层4向下凹陷形成凹陷栅漏势垒层区域9。凹陷栅源势垒层区域8和凹陷栅漏势垒层区域9均是通过在AlGaN势垒层4的表面进行光刻、刻蚀形成的。
作为一种优选的方案，凹陷栅源势垒层区域8的长度为0.5μm、刻蚀深度为5nm，凹陷栅漏势垒层区域9的长度为0.6μm、刻蚀深度为4nm，栅电极7的长度为1.0μm，栅源间距为1μm，栅漏间距为2.5μm。
二、改进后的AlGaN/GaN异质结场效应晶体管的制作方法
参照图1和图4，本发明的具有双凹陷AlGaN势垒层的AlGaN/GaN异质结场效应晶体管，其制作方法如下：
(1)、对半绝缘衬底1(SiC衬底)进行清洗，去除表面污物；
(2)、在半绝缘衬底1(SiC衬底)上通过金属-有机物化学气相淀积(MOCVD)技术，淀积生长40nm厚的AlN成核层2；
(3)、在AlN成核层2上淀积生长3μm厚、浓度为1.0×1015cm-3的n型GaN缓冲层3；
(4)、在GaN缓冲层3上方异质外延生长AlGaN势垒层4，在AlGaN势垒层4薄膜生长过程中，控制势垒层中Al含量为0.25，AlGaN势垒层4高度为25nm；
(5)、在AlGaN势垒层4上依次进行光刻和隔离注入，形成隔离区和有源区；
(6)、对有源区依次进行源漏光刻，利用磁控溅射技术形成Ti/Al/Ni/Au四层合金层，金属剥离并高温退火，形成1μm长的源电极5和漏电极6，源电极5和漏电极6与AlGaN势垒层4形成良好的欧姆接触；
(7)、对栅源之间需要凹陷的势垒层区域进行光刻，采用感应耦合等离子体(ICP)刻蚀技术，形成刻蚀深度和长度分别为5nm和0.5μm的凹陷栅源势垒层区域8；
(8)、对栅漏之间需要凹陷的势垒层区域进行光刻，采用感应耦合等离子体(ICP)刻蚀技术，形成刻蚀深度和长度分别为4nm和0.6μm的凹陷栅漏势垒层区域9；
(9)、对于凹陷栅源势垒层区域8与凹陷栅漏势垒层区域9之间，采用栅光刻板进行光刻，在AlGaN势垒层4表面电子束蒸发形成Ni/Au合金，金属剥离，形成1μm长的栅电极7，栅电极7与AlGaN势垒层4形成肖特基接触；
(10)、对所形成的具有双凹陷AlGaN势垒层的AlGaN/GaN异质结场效应晶体管进行表面钝化，形成电极压焊点，完成器件制作。
优选的是，栅电极7长为1μm，栅源间距为1μm，栅漏间距为2.5μm。
三、改进后的AlGaN/GaN异质结场效应晶体管的性能
我们对改进后的AlGaN/GaN异质结场效应晶体管与常规的AlGaN/GaN异质结场效应晶体管在小信号高频特性、微波输出特性这两方面做了比较。
1、小信号高频特性
图2是常规GaN HEMT器件与具有双凹陷AlGaN势垒层GaN HEMT器件的小信号高频特性曲线对比图。
图2的仿真结果显示，具有双凹陷AlGaN势垒层的GaN HEMT的最大振荡频率达到64GHz，比常规结构增长了12.3％，单边功率增益和最大可获得增益比常规GaN HEMT增长了1.2dB和0.8dB。
2、微波输出特性
图3是常规GaN HEMT器件与具有双凹陷AlGaN势垒层GaN HEMT器件的微波输出特性对比图。
微波特性仿真验证，在S波段，具有双凹陷AlGaN势垒层的GaN HEMT的最大功率附加效率和饱和输出功率密度均高于常规GaN HEMT的输出能力。
需要说明的是，上述实施例不以任何形式限制本发明，凡采用等同替换或等效变换的方式所获得的技术方案，均落在本发明的保护范围内。
Claims (7)
1.一种具有双凹陷AlGaN势垒层的AlGaN/GaN异质结场效应晶体管，结构自下而上包括：半绝缘衬底(1)、AlN成核层(2)、GaN缓冲层(3)和AlGaN势垒层(4)，其特征在于，所述AlGaN势垒层(4)的上表面的两侧分别设有源电极(5)和漏电极(6)、源电极(5)和漏电极(6)之间且靠近源电极(5)处设有栅电极(7)，在栅电极(7)的源侧区域一部分AlGaN势垒层(4)向下凹陷形成凹陷栅源势垒层区域(8)，在栅电极(7)的漏侧区域一部分AlGaN势垒层(4)向下凹陷形成凹陷栅漏势垒层区域(9)。
2.根据权利要求1所述的具有双凹陷AlGaN势垒层的AlGaN/GaN异质结场效应晶体管，其特征在于，所述凹陷栅源势垒层区域(8)和凹陷栅漏势垒层区域(9)均是通过在AlGaN势垒层(4)的表面进行光刻、刻蚀形成的。
3.根据权利要求2所述的具有双凹陷AlGaN势垒层的AlGaN/GaN异质结场效应晶体管，其特征在于，所述凹陷栅源势垒层区域(8)的长度为0.5μm、刻蚀深度为5nm，所述凹陷栅漏势垒层区域(9)的长度为0.6μm、刻蚀深度为4nm。
4.根据权利要求3所述的具有双凹陷AlGaN势垒层的AlGaN/GaN异质结场效应晶体管，其特征在于，所述栅电极(7)的长度为1.0μm，栅源间距为1μm，栅漏间距为2.5μm。
5.根据权利要求1所述的具有双凹陷AlGaN势垒层的AlGaN/GaN异质结场效应晶体管，其特征在于，所述栅电极(7)通过肖特基接触与AlGaN势垒层(4)相连，所述源电极(5)和漏电极(6)均通过欧姆接触与AlGaN势垒层(4)相连。
6.根据权利要求1所述的具有双凹陷AlGaN势垒层的AlGaN/GaN异质结场效应晶体管，其特征在于，所述GaN缓冲层(3)具有n型电阻特性或半绝缘特性。
7.根据权利要求1所述的具有双凹陷AlGaN势垒层的AlGaN/GaN异质结场效应晶体管，其特征在于，所述半绝缘衬底(1)为硅衬底、碳化硅衬底或蓝宝石衬底。
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| CN112786686A (zh) * | 2021-02-08 | 2021-05-11 | 西安电子科技大学 | 一种具有势垒层表面P型掺杂的AlGaN/GaN高电子迁移率晶体管 |
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