CN106994644B - The thickness distribution of semiconductor wafer measures system and method, grinding system and grinding method, thickness allowance balance measuring method - Google Patents

The thickness distribution of semiconductor wafer measures system and method, grinding system and grinding method, thickness allowance balance measuring method Download PDF

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Publication number
CN106994644B
CN106994644B CN201611138706.XA CN201611138706A CN106994644B CN 106994644 B CN106994644 B CN 106994644B CN 201611138706 A CN201611138706 A CN 201611138706A CN 106994644 B CN106994644 B CN 106994644B
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aforementioned
semiconductor wafer
thickness distribution
measurement
semiconductor chip
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CN106994644A (en
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大祥修
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Sumco Corp
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Sumco Corp
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
    • B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/34—Accessories
    • B24B37/345—Feeding, loading or unloading work specially adapted to lapping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/12—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving optical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

There is provided it is a kind of can it is easy while holding semiconductor wafer with manipulator and accurately measure the thickness distribution of semiconductor wafer, the thickness distribution of the semiconductor wafer that can easily be done expansion to multiple devices measures system.Thickness distribution measurement system (100) of semiconductor wafer of the invention is characterized in that, have loading unit (10), Storage Department (30), determination part (50), trucking department (70), trucking department (70) has mechanical arm (72), it is set to the pedestal (74) of its terminal part (72b), hold the manipulator (76) of semiconductor wafer (W), it carries control unit (78), determination part (50) has determination sensor (52), linear scale (54), the measurement control unit (56) for keeping the moving distance of bar (54R) synchronous with the measured value of each unit time of thickness of semiconductor wafer (W) obtained by determination sensor (52).

Description

Thickness distribution measurement system and method, grinding system and the grinding side of semiconductor wafer Method, thickness allowance balance measuring method
Technical field
The present invention relates to the thickness distribution of semiconductor wafer measurement system and polishing semiconductor wafer systems, semiconductor wafer Thickness distribution measuring method and semiconductor wafer thickness allowance balance measuring method and semiconductor wafer grinding side Method.
Background technique
As the substrate of semiconductor equipment, the semiconductor wafers such as silicon wafer are widely used.Such as silicon wafer is with silicon single crystal The crystal pulling process of ingot is finally to be cleaned by slicing process, flat surface grinding process, etching work procedure and grinding process at the beginning, by This is processed to polishing chip.In addition, the grinding of silicon wafer is generally ground under multiple stages such as rough lapping and smooth grinding, The thickness allowance balance determination techniques of the grinding technique of semiconductor wafer and the semiconductor wafer for confirming grinding precision become It is important.
In recent years, in the fining for the heavy caliber and the equipment formed using the silicon wafer for carrying out silicon wafer, for silicon The requirement of the flatness of wafer surface becomes to be increasingly stringenter.Therefore, it is ground can accurately grind semiconductor wafer In the progress of the exploitation of mill technology, applicant in this case in patent document 1, proposes that one kind can be accurately proceed semiconductor die The polishing semiconductor wafer system of the grinding of piece.
The polishing semiconductor wafer system recorded in patent document 1 has grinding mechanism, keeping slot, measuring means, movement Mechanism, grinding condition set mechanism, grinding mechanism grinding semiconductor chip, the keeping slot can store semiconductor wafer And aqueous solutions of organic acids can be taken care of, the shape of the measuring means measurement semiconductor wafer, the mobile mechanism makes aforementioned Semiconductor wafer grinding mechanism, keeping slot and aforementioned measuring means between move, the grinding condition set mechanism be based on by The measurement result that measuring means obtains sets the grinding condition under aforementioned grinding mechanism.In the polishing semiconductor wafer system, The measuring shape of semiconductor wafer after being ground is based on the measurement result, feeds back grinding condition and is somebody's turn to do as a result, setting next time Grinding condition, thus, it is possible to manufacture the semiconductor wafer of high flat degree.
Patent document 1: Japanese Unexamined Patent Publication 2015-46488 bulletin.
By the polishing semiconductor wafer system recorded in patent document 1, high flat degree semiconductor can be produced Chip.Here, in patent document 1, following proposal is proposed: by the mobile mechanism for having 6 axis robots and chip handle part, In the state of holding semiconductor wafer, between the sensor portion by spectral interference extensometer, measure from semiconductor wafer Center to periphery radial shape (thickness distribution).With it is dedicated with flatness check device etc. by commercially available semiconductor wafer The measuring shape that machinery carries out is different, and under the measurement, the shape that semiconductor wafer is carried out while holding semiconductor wafer is surveyed It is fixed, so can be preferred, but basis with the thickness distribution (shape) of easy method measurement semiconductor wafer, this point The research of the present inventor is it is found that have room for improvement on this aspect of measurement accuracy.
Summary of the invention
Therefore, the purpose of the present invention is to provide a kind of thickness distribution measurement system of semiconductor wafer in view of the above problems The same of semiconductor wafer can be being held with the thickness distribution measurement system of polishing semiconductor wafer system, above-mentioned semiconductor wafer When thickness distribution easy and that accurately measure semiconductor wafer, above-mentioned polishing semiconductor wafer system can be thus more acurrate Ground carries out the data feedback to grinding condition.
The present inventor in the state of holding semiconductor wafer by mechanical arm and manipulator to the diameter of semiconductor wafer To thickness distribution be measured when measurement accuracy exist improve leeway carried out sharp study.Sensor portion with it is constant when Between interval (such as several intervals 100 μ s) thickness by point of semiconductor wafer is measured.On the other hand, by machinery In the case that arm moves it while holding semiconductor wafer, the movement speed of semiconductor wafer is not necessarily constant speed, usually Fluctuation is generated in movement speed.Due to the fluctuation of the movement speed, the half of each minute interval in the sensor portion Conductor chip amount of movement mutually generates difference, it is contemplated that there is the leeway for improving measurement accuracy at that point.Thus, it is found that Be capable of providing a kind of thickness distribution measurement system of semiconductor wafer, the thickness distribution measurement system of the semiconductor wafer make by The measured value that sensor portion measures within each unit time is synchronous with the moving distance of semiconductor wafer, thus improves semiconductor The measurement accuracy of the thickness distribution of chip.In turn, described the inventors discovered that being capable of providing a kind of polishing semiconductor wafer system Polishing semiconductor wafer system can more accurately carry out anti-to the data of grinding condition according to the thickness distribution thus measured Feedback.Moreover, it has been found that thickness distribution measurement system and polishing semiconductor wafer system can prevent the speed of each mechanical arm The present invention is so far completed in uneven influence.
That is, emphasis structure of the invention is as described below.
The thickness distribution measurement system of semiconductor wafer according to the present invention has loading unit, Storage Department, determination part, carrying Portion, aforementioned loading unit move in semiconductor wafer, and aforementioned Storage Department takes care of aforesaid semiconductor chip, aforementioned determination part measurement aforementioned half The thickness distribution of conductor chip, aforementioned trucking department respectively the 1st transport path between aforementioned loading unit and aforementioned determination part, with And the 2nd transport path between aforementioned Storage Department and aforementioned determination part carries aforesaid semiconductor chip, which is characterized in that aforementioned to remove Fortune portion has mechanical arm, pedestal, manipulator, carries control unit, and aforementioned mechanical arm can be in aforementioned 1st transport path and aforementioned the Movement, aforementioned pedestal are arranged at the terminal part of the mechanical arm in 2 transport path, and aforementioned mechanical hand channel is arranged by the pedestal, will Aforesaid semiconductor chip is held, the aforementioned holding for carrying the aforesaid semiconductor chip that control unit control is carried out by aforementioned mechanical hand and The movement of aforementioned mechanical arm, aforementioned determination part have determination sensor, linear scale, measurement control unit, aforementioned determination sensor Thickness in the given area of measurement of each unit time aforesaid semiconductor chip, the shifting for the bar that the measurement of aforementioned linear scale is retreated Dynamic distance, the Moving Unit that aforementioned measurement control unit states bar in each of front make the aforesaid semiconductor carried out by aforementioned determination sensor The measured value of the thickness of chip is synchronous.
Here it is preferred that aforementioned carrying control unit and aforementioned measurement control unit have function control as follows: aforementioned the It, will be before the state for holding aforesaid semiconductor chip in the path of at least one party of 1 transport path and aforementioned 2nd transport path It states mechanical arm and is carried to aforementioned determination part, in the state of making aforementioned pedestal be connected to aforementioned rod, in the state for making aforementioned holding Aforementioned mechanical arm and aforementioned rod in a direction in the advance and retreat direction of aforementioned rod simultaneously move during, by aforementioned Determination part measures the radial thickness distribution of aforesaid semiconductor chip.
Moreover it is preferred that aforementioned determination part has the supporting mass of channel-shaped, the supporting mass of aforementioned channel-shaped has opposed one The aforementioned determination sensor of counter-lateral quadrents, aforementioned determination part is made of a pair of of head of spectral interference laser extensometer, aforementioned a pair Head correspondence is configured at an aforementioned counter-lateral quadrents, and the length of aforesaid side portions is bigger than the radius of aforesaid semiconductor chip, in turn, preferably It is that aforementioned a pair of head is configured to horizontal.
Moreover it is preferred that aforementioned rod is air pressurized formula, accurate adjuster is set on aforementioned linear scale, it is preceding State the control of accurate adjuster and abut mobile thrust to aforementioned pedestal for aforementioned rod, from aforementioned rod generate to aforementioned pedestal Thrust is controlled in 0.03MPa or less.
In turn, it is preferred that aforementioned rod and aforementioned pedestal are abutted via resin plate.
Moreover it is preferred that being pasted with thickness and the roughly equal correction of aforesaid semiconductor chip on hand in aforementioned mechanical Use reference plate.In this case, it is preferred that aforementioned carrying control unit and aforementioned measurement control unit also have according to wishing with aforementioned Correction carries out the control function of the correction of aforementioned measured value with reference plate.
In addition, polishing semiconductor wafer system has loading unit, grind section, Storage Department, determination part, carrying according to the present invention Portion, aforementioned loading unit move in semiconductor wafer, and aforementioned grind section grinds aforesaid semiconductor chip, aforementioned Storage Department keeping aforementioned half Conductor chip, the thickness distribution of aforementioned determination part measurement aforesaid semiconductor chip, aforementioned trucking department is respectively via aforementioned measurement Between the 1st transport path and aforementioned grind section and aforementioned determination part between the aforementioned loading unit and aforementioned grind section in portion 2nd transport path carries aforesaid semiconductor chip, which is characterized in that aforementioned trucking department has mechanical arm, pedestal, manipulator, removes Control unit is transported, aforementioned mechanical arm can act in aforementioned 1st transport path and aforementioned 2nd transport path, and aforementioned pedestal is set It is placed in the terminal part of the mechanical arm, aforementioned mechanical hand channel is arranged by the pedestal, and aforesaid semiconductor chip is held, aforementioned carrying control The holding for the aforesaid semiconductor chip that portion's control processed is carried out by aforementioned mechanical hand and the movement of aforementioned mechanical arm, aforementioned determination part tool There are determination sensor, linear scale, measurement control unit, aforementioned determination sensor is brilliant in measurement of each unit time aforesaid semiconductor The thickness of the given area of piece, the moving distance for the bar that the measurement of aforementioned linear scale is retreated, aforementioned measurement control unit is in each of front The Moving Unit for stating bar keeps the measured value of the thickness of the aforesaid semiconductor chip carried out by aforementioned determination sensor synchronous.
Here it is preferred that aforementioned 2nd transport path is via aforementioned Storage Department.
Moreover it is preferred that aforementioned carrying control unit and aforementioned measurement control unit have function control as follows: aforementioned the It, will be before the state for holding aforesaid semiconductor chip in the path of at least one party of 1 transport path and aforementioned 2nd transport path It states mechanical arm and is carried to aforementioned determination part, in the state of making aforementioned pedestal be connected to aforementioned rod, in the state for making aforementioned holding Aforementioned mechanical arm and aforementioned rod in a direction in the advance and retreat direction of aforementioned rod simultaneously move during, by aforementioned Determination part measures the radial thickness distribution of aforesaid semiconductor chip.
In turn, it is preferred that aforementioned determination part has the supporting mass of channel-shaped, and the supporting mass of aforementioned channel-shaped has opposed one The aforementioned determination sensor of counter-lateral quadrents, aforementioned determination part is made of a pair of of head of spectral interference laser extensometer, aforementioned a pair Head correspondence is configured at an aforementioned counter-lateral quadrents, and the length of aforesaid side portions is bigger than the radius of aforesaid semiconductor chip, in turn, preferably It is that aforementioned a pair of head is configured to horizontal.
In addition, accurate adjuster is set on aforementioned linear scale it is further preferred that aforementioned rod is air pressurized formula, Aforementioned precision adjuster control abuts mobile thrust to aforementioned pedestal for aforementioned rod, from aforementioned rod generate to aforementioned pedestal Thrust be controlled in 0.03MPa or less.
In turn, it is preferred that aforementioned rod and aforementioned pedestal are abutted via resin plate.
Moreover it is preferred that being pasted with thickness and the roughly equal correction of aforesaid semiconductor chip on hand in aforementioned mechanical Use reference plate.In this case, it is preferred that aforementioned carrying control unit and aforementioned measurement control unit also have according to wishing with aforementioned Correction carries out the control function of the correction of aforementioned measured value with reference plate.
In addition, the thickness distribution measuring method of semiconductor wafer according to the present invention uses the semiconductor wafer of above-mentioned record Grinding system, which is characterized in that in aforementioned 1st transport path or aforementioned 2nd transport path, brilliant aforesaid semiconductor is held In the state of piece, which is carried to aforementioned determination part, in the state of making aforementioned pedestal be connected to aforementioned rod, is made The aforementioned mechanical arm and aforementioned rod of the state of aforementioned holding simultaneously move in a direction in the advance and retreat direction of aforementioned rod, together When measurement aforesaid semiconductor chip radial thickness distribution.
In addition, the thickness distribution measuring method of semiconductor wafer according to the present invention uses the semiconductor wafer of above-mentioned record Grinding system, which is characterized in that in aforementioned 1st transport path, in the state of aforesaid semiconductor chip is held, partly by this Conductor chip is carried to aforementioned determination part, in the state of making aforementioned pedestal be connected to aforementioned rod, makes the state of aforementioned holding Aforementioned mechanical arm and aforementioned rod simultaneously move in a direction in the advance and retreat direction of aforementioned rod, while measuring aforesaid semiconductor The 1st radial thickness distribution of chip, will in the state of aforesaid semiconductor chip is held in aforementioned 2nd transport path The semiconductor wafer is carried to aforementioned determination part, in the state of making aforementioned pedestal be connected to aforementioned rod, makes the shape of aforementioned holding The aforementioned mechanical arm and aforementioned rod of state simultaneously move in a direction in the advance and retreat direction of aforementioned rod, while measuring aforementioned half The 2nd radial thickness distribution of conductor chip, is based on aforementioned 1st thickness distribution and aforementioned 2nd thickness distribution, and measurement is ground by aforementioned The thickness allowance balance that mill portion generates.
In turn, the grinding method of semiconductor wafer according to the present invention is characterized in that, based on using the half of above-mentioned record The thickness distribution of the semiconductor wafer of the thickness distribution measuring method measurement of conductor chip sets grinding condition.
In turn, the grinding method of semiconductor wafer according to the present invention is characterized in that, based on using the half of above-mentioned record The thickness allowance balance of the semiconductor wafer of the thickness allowance balance measuring method measurement of conductor chip sets grinding condition.
In accordance with the invention it is possible to provide a kind of polishing semiconductor wafer system, above-mentioned polishing semiconductor wafer system make by The measured value that sensor portion measures per unit time is synchronous with the moving distance of semiconductor wafer, so semiconductor can held Thickness distribution that is easy and accurately measuring semiconductor wafer while chip, thus, it is possible to more accurately carry out to lapping stick The data feedback of part.
Detailed description of the invention
Fig. 1 is the skeleton diagram for indicating the thickness distribution measurement system 100 of the semiconductor wafer of one embodiment of the present invention.
Fig. 2 is 200 skeleton diagram of polishing semiconductor wafer system for indicating one embodiment of the present invention.
Fig. 3 A is the schematic diagram for indicating trucking department 70 according to an embodiment of the present invention, is its schematic front view.
Fig. 3 B is the schematic diagram for indicating trucking department 70 according to an embodiment of the present invention, is putting for the left view side of Fig. 3 A Big schematic diagram.
Fig. 4 A is the schematic diagram for indicating determination part 50 according to an embodiment of the present invention, is its schematic front view.
Fig. 4 B is the schematic diagram for indicating determination part 50 according to an embodiment of the present invention, is the vertical view signal of Fig. 4 A Figure.
Fig. 5 is the schematic diagram for illustrating the measurement state of the thickness distribution of semiconductor wafer W of one embodiment of the present invention.
Fig. 6 is the chart for indicating the thickness distribution of the silicon wafer in relation to the sample 1 measured in embodiment, Fig. 6 A be by The thickness distribution that polishing semiconductor wafer system 200 according to the present invention measures, Fig. 6 B, Fig. 6 C are with semiconductor wafer with flat Spend the thickness distribution of check device measurement.
Fig. 7 is the chart for indicating the thickness distribution of the silicon wafer in relation to the sample 2 measured in embodiment, Fig. 7 A be by The thickness distribution that polishing semiconductor wafer system 200 according to the present invention measures, Fig. 7 B, Fig. 7 C are with semiconductor wafer with flat Spend the thickness distribution of check device measurement.
Fig. 8 is the chart for indicating the thickness distribution of the silicon wafer in relation to the sample 3 measured in embodiment, Fig. 8 A be by The thickness distribution that polishing semiconductor wafer system 200 according to the present invention measures, Fig. 8 B, Fig. 8 C are with semiconductor wafer with flat Spend the thickness distribution of check device measurement.
Specific embodiment
Hereinafter, embodiments of the present invention are described in detail referring to attached drawing.The corresponding relationship of figure is carried out in advance Explanation.Fig. 1 is that thickness distribution measurement the integrally-built of system 100 of the semiconductor wafer of the 1st embodiment of the invention is shown It is intended to, Fig. 2 is the polishing semiconductor wafer system 200 using the 2nd embodiment of the invention of thickness distribution measurement system 100 Integrally-built schematic diagram.Fig. 3, Fig. 4 be indicate the trucking department 70 used in the 1st embodiment and the 2nd embodiment and The schematic diagram of determination part 50, Fig. 5 are the measurements to the thickness distribution of the semiconductor wafer W of the 1st embodiment and the 2nd embodiment The schematic diagram that state is illustrated.In addition, in attached drawing for convenience of description, by the ratio of the shape of each structure and actual aspect ratio Example differently turgidly indicates.
(the 1st embodiment: the thickness distribution of semiconductor wafer measures system)
Using Fig. 1, Fig. 3 ~ 5, system is measured to the thickness distribution of semiconductor wafer according to an embodiment of the present invention 100 are illustrated.Polishing semiconductor wafer system 200 has loading unit 10, Storage Department 30, determination part 50, trucking department 70, above-mentioned Loading unit 10 moves in semiconductor wafer W, and above-mentioned Storage Department 30 takes care of semiconductor wafer W, and said determination portion 50 measures semiconductor die The thickness distribution of piece W, above-mentioned trucking department 70 the 1st transport path R11, Yi Jibao between loading unit 10 and determination part 50 respectively Semiconductor wafer W is carried on the 2nd transport path R12 between pipe portion 30 and determination part 50.Here, trucking department 70 has mechanical arm 72, pedestal 74, manipulator 76, carrying control unit 78, above-mentioned mechanical arm 72 can be in the 1st transport path R11 and the 2nd transport path Movement, above-mentioned pedestal 74 are arranged at the terminal part 72a of the mechanical arm 72 in R12, and above-mentioned manipulator 76 is set via the pedestal 74 It sets, holds semiconductor wafer W, above-mentioned carrying control unit 78 controls holding and the machine of the semiconductor wafer W carried out by manipulator 76 The movement of tool arm 72.In addition, determination part 50 has determination sensor 52, linear scale 54, measurement control unit 56, said determination is passed Sensor 52 measures the thickness of the given area of semiconductor wafer W, the movement of the bar 54R that the measurement of above-mentioned linear scale 54 is retreated away from From the thickness for the semiconductor wafer W that said determination control unit 56 carries out determination sensor 52 in the Moving Unit of each bar 54R The measurement of degree is synchronous.
In addition, though being described in detail later, but it is preferred that having following function: carrying control unit 78 and measurement Control unit 56, will be holding semiconductor wafer in the path of at least one party of the 1st transport path R11 and the 2nd transport path R12 The mechanical arm 72 of the state of W is carried to determination part 50, in the state of making pedestal 74 be connected to bar 54R, makes aforementioned holding The mechanical arm 72 and bar 54R of state are during mobile simultaneously in a direction in the advance and retreat direction of bar 54R, by determination part The radial thickness distribution of 50 pairs of semiconductor wafer Ws is measured.Hereinafter, each structure is described in detail in order.
Firstly, the semiconductor wafer W as object is not special in semiconductor wafer thickness distribution measurement system 100 Ground limitation, can be used for example it is being made of silicon, compound semiconductor (GaAs, GaN, SiC), on the surface thereof without extension The single-chip of the bulk (bulk) of layer is as semiconductor wafer W.In addition it is also possible to lift on block-like single wafer surface with outer Prolong example of the epitaxial wafer as semiconductor wafer W of layer.The diameter and thickness of semiconductor wafer W are also without any restrictions.
In loading unit 10, as long as moving in semiconductor wafer W outside semiconductor wafer thickness distribution measurement system 100 Words, can be arranged to general structure.Usually, in the front end open-type wafer transfer box as defined in SEMI standard E47.1 etc. In (FOUP, Front Opening Unified Pod), multiple (such as 25) semiconductor wafer Ws, semiconductor wafer W are accommodated It is moved to loading unit 10.
Storage Department 30 is able to use the well-known sink that can store multiple semiconductor wafer Ws, usual organic sour water Solution is filled to sink.After the semiconductor wafer W that measured portion 50 measures is carried to Storage Department 30 by trucking department 70, It is taken care of in Storage Department 30.Portion 70 can be handled upside down by wafer W of the keeping at Storage Department 30 again and be carried to determination part 50.
Here, trucking department 70 is illustrated using Fig. 3 A, Fig. 3 B.If schematically illustrated in figure 3 a, trucking department 70 has There is mechanical arm 72, pedestal 74, manipulator 76, carry control unit 78, above-mentioned pedestal 74 is arranged at the terminal part of the mechanical arm 72 72a, above-mentioned manipulator 76 are arranged via the pedestal 74, hold semiconductor wafer W, the above-mentioned control of carrying control unit 78 is by manipulator The holding of 76 semiconductor wafer Ws carried out and the movement of mechanical arm 72.Control is handled upside down by the movement below that trucking department 70 carries out Portion 78 processed controls.In addition, though be illustrated as control unit 78 is carried in base portion 72b, but this is schematic diagram, it is at all unrestricted System.
Base portion 72b can be fixedly provided in as basic point semiconductor wafer thickness distribution measurement system by mechanical arm 72 On 100 commitment positions, the mechanical arm 72 for being used for trucking department 70 can use joint type.Terminal part 72a is as setting table The part of seat 74.For example, by the 1st rotary joint 72c and the combination of the 2nd respective spinning movement of rotary joint 72d, terminal part 72a can be moved along arbitrary certain orientation (being vertical direction in figure 3 a).In addition, only scheming on mechanical arm 72 in the figure It is shown with the 1st rotary joint 72c and the 2nd rotary joint 72d, another rotary joint can also be set on mechanical arm 72.For example, Base portion 72b can also be enable to rotate.
Manipulator 76 also can have base portion 76a and handle part 76b, is configured to base portion 76a in figure 3 a and is arranged at platform The mechanism that seat 74, handle part 76b hold semiconductor wafer W.It remains able to make by the handle part 76b semiconductor wafer carried out With edge grip device (edge handling) or the first-class arbitrary mode of vacuum clip.For example, it is also possible in base portion 76a or handle Hold the control mechanism that manipulator 76 not shown in the figure is added in portion 76b.
Fig. 3 B is equivalent to using Fig. 3 A as the left view in the positive situation of trucking department 70, or will be on terminal part 72a The schematic diagram of Fang Fang great.If mechanical arm 72 with the up and down action of both set a distances, corresponds to the up and down action, end in the vertical direction End 72a is moved up and down, held the semiconductor wafer W on manipulator 76 also with it is equidistant in the vertical direction on move down It is dynamic.
In addition, the terminal part 72a and semiconductor wafer W for being illustrated as mechanical arm 72 are in the vertical direction in Fig. 3 A, Fig. 3 B It is mobile, but these movable wires of present embodiment are not limited in vertical direction, and be arbitrary.It is preferable, however, that When by the radial thickness distribution of aftermentioned determination part 50 measurement semiconductor wafer W, by the terminal part 72a of mechanical arm 72 and The movement of semiconductor wafer W is set as same direction.In addition, the movement speed of the semiconductor wafer W carried out by trucking department 70 is not It is particularly limited, but in the thickness distribution of aftermentioned measurement semiconductor wafer W, in order to more improve measurement accuracy, preferably It is that above-mentioned unidirectional movement is for example set as 30mm/s hereinafter, being more preferably set to 10 ~ 20mm/s.In addition, for Carry out this it is unidirectional mobile when mechanical arm 72 movement, also may include halted state.
Then, determination part 50 is illustrated using Fig. 4 A, Fig. 4 B.In addition, Fig. 4 A is the main view of determination part 50, and Figure when being equivalent to from unilateral observation determination part 50 identical with Fig. 3 B.Fig. 4 B is the top view of determination part 50.As in Figure 4 A It shows schematically, determination part 50 has determination sensor 52, linear scale 54, measurement control unit 56, said determination sensor 52 The thickness of the given area of semiconductor wafer W is measured, the moving distance for the bar 54R that the above-mentioned measurement of linear scale 54 is retreated is above-mentioned Measurement control unit 56 makes the survey of the thickness of the semiconductor wafer W carried out by determination sensor 52 in the Moving Unit of each bar 54R It is fixed synchronous.
As long as if the thickness for the given area that determination sensor 52 can non-contiguously measure semiconductor wafer W i.e. not by Any restriction is able to use well-known equipment.Such as it is illustrated in Figure 4 A, it can be by spectral interference laser extensometer A pair of of head 52a, 52b are used as determination sensor 52.Head 52a, 52b of spectral interference laser extensometer are in each unit Time (it is not intended to be defined, in addition, according to the specification of extensometer, such as 200 μ s) it is measured to the distance of measuring point.Via quilt For components of assays in the opposite side configuration header 52b of the setting position of head 52a, thus, it is possible to measure the thickness of measured component. When semiconductor wafer W is located at position shown in Fig. 4 A, Fig. 4 B, determination sensor 52 can measure the semiconductor wafer W of measuring point P Thickness.
Linear scale 54 is also referred to as linear encoder or linear position detector, and being able to use in present embodiment can Measure the general equipment of the moving distance of the bar 54R to retreat.The detection mode of the amount of movement of bar 54R is not limited at all, energy Enough illustrate magnetic-type detection or transmission type photoelectric formula.In addition, as long as bar 54R, which can be abutted, is moved to the pedestal 74 of trucking department 70 i.e. not It is restricted, is able to use the previous well-known equipment such as piston rod, hydraulic type pressure cylinder rod of air pressurized mode.? In aftermentioned Fig. 5, as an example of linear scale 54, the plunger-cylinder 54S of air pressurized formula is illustrated together.In addition, bar The length of 54R is arranged to size at least smaller than the radius r of semiconductor wafer W, as long as meeting the condition, the length of bar 54R is not It is restricted, place can be correspondingly arranged or purposes suitably selects.
In addition, Moving Unit of the measurement control unit 56 in each bar 54R makes the semiconductor die carried out by determination sensor 52 The measured value of the thickness of piece W is synchronous.Here, the set Moving Unit of the every movement of bar 54R (be not intended to be defined, in addition, according to The specification of linear scale, such as 0.1mm), the advance and retreat of 54 detection bar 54R of linear scale.It measures control unit 56 and is checking the detection When signal, can obtain the semiconductor wafer W carried out by determination sensor 52, per unit time in the measuring point P that measures Thickness measurement.In addition, the measured value of the thickness of semiconductor wafer W does not need the smallest Moving Unit in each bar 54R It is interior all to obtain.That is, in the integral multiple (i.e. the sampling period of distance at equal intervals) of each Moving Unit, by measurement control unit 56 Control detect the pulse signal from linear scale, obtain the measured value of thickness carried out by determination sensor 52.
In addition, measurement control unit 56 also can control the advance and retreat of bar 54R.For example, measurement control unit 56 also can control bar The movement of 54R, so that determination part 50 is not interfered with trucking department 70.As described later, in the thickness distribution of measurement semiconductor wafer W When, it is preferably applied certain thrust, so that the end movement of bar 54R is connected to pedestal 74.
In addition, as shown in Figure 4 B, being able to use in a manner of not interfering with the carrying manner of execution carried out by trucking department 70 The supporting mass 55 of the set shape formed keeps determination sensor 52 and linear scale 54.Swash using the spectral interference both stated In the case where a pair of of head 52a, 52b of light extensometer, determination part 50 has slot (the チ ャ ネ of opposed pairs side Le) shape supporting mass 55, by the corresponding counter-lateral quadrents for being configured at supporting mass 55, the length of the side is excellent by a pair of of head 52a, 52b It is selected as bigger than the radius of semiconductor wafer W.This be can effectively be passed through for the center of semiconductor wafer W a pair of head 52a, Between 52b.In addition, in figure 3b, determination sensor 52 and linear scale 54 are kept by same bracket, but can certainly It is kept by respective bracket.
Here, it is such as showed schematically in Fig. 5, it is therefore preferred to have function control as follows: in the 1st transport path R11 and the 2nd At least one party in transport path R12, carries control unit 78 and measurement control unit 56 will be the state for holding semiconductor wafer W Mechanical arm 72 is carried to determination part 50, in the state of making pedestal 74 be connected to bar 54R, is made semiconductor by mechanical arm 76 The mechanical arm 72 and bar 54R for the state that wafer W is held process mobile simultaneously in a direction on the advance and retreat direction of bar 54R In, the radial thickness distribution of semiconductor wafer W is measured by determination part 50.By the control, semiconductor wafer thickness distribution Measurement system 100 is able to use above-mentioned trucking department 70 and determination part 50, the 1st transport path R11's or the 2nd transport path R12 In the path of at least one party, the thickness of the one party of the front and back of the grinding of semiconductor wafer W or the semiconductor wafer W of both sides is carried out The measurement of distribution.The preferred embodiment specifically illustrates to carry out according to following.Firstly, by handle part 76b by semiconductor In the state that wafer W is held, pedestal 74 is made to be connected to bar 54R.Also, make the pedestal for the terminal part 72a for being set to mechanical arm 72 74 move on the advance and retreat direction (lower section in Fig. 4) of bar 54R.In the state that bar 54R is also abutted, correspond to pedestal 74 Movement moved.In the case where a concrete example of Fig. 5, bar 54R is mobile to the lower section of the side as advance and retreat direction.Companion With the movement, the semiconductor wafer W for being held in manipulator 76 is also jointly equidistantly moved in parallel with pedestal 74.Also, In the state that semiconductor wafer W is held, semiconductor wafer is moved downwards, is partly led so can measure by determination part 50 The radial thickness distribution of body wafer W.In a concrete example of Fig. 5, it can measure from the center of semiconductor wafer W to radial The thickness distribution of the measurement region R of upper end.It can also be complete throughout the diameter of semiconductor wafer W according to the measuring shape of manipulator 76 The thickness distribution in portion can also take the radial direction of multiple semiconductor wafers, measure the thickness distribution of the multiple directions of semiconductor wafer. In addition, illustrating the state for falling semiconductor wafer W, naturally it is also possible to increase upwards on the contrary in Fig. 5.
Here, the movement of pedestal 74, i.e. movement of the bar 54R on advance and retreat direction are by the servo motor for driving mechanical arm 72 Deng movement carry out.If then pedestal 74 can move linearly from arbitrary point in the range that can be acted of mechanical arm 72 To other arbitrary point.However, it is not necessary to which the speed of mechanical arm 72 is remained constant speed.In the semiconductor wafer of present embodiment Thickness distribution measures in system 100, makes the measured value and line of the thickness measured within each unit time by determination sensor 52 Property scale 54 bar 54R moving distance it is synchronous, thus, it is possible to actually ignore the influence of the speed of mechanical arm 72, so can More precisely measure the thickness distribution of semiconductor wafer W.In addition, even the mechanical arm of same specification also can generate speed not It, but according to the present embodiment can be without the uneven influence of apparent velocity, so the various dresses using mechanical arm can be expanded to It sets, present embodiment is also preferred in this regard.
As described above, in the present embodiment, make the measured value of each unit time measured by determination sensor 52 It is synchronous with the moving distance of semiconductor wafer W measured with linear scale 54, so can be while holding semiconductor wafer W Thickness distribution that is easy and accurately measuring semiconductor wafer W.Furthermore it is possible to the various device application roots for using mechanical arm According to the measurement system of present embodiment.Partly led by semiconductor wafer with what the special-purpose machineries such as flatness check device carried out In the case where the measuring shape of body wafer W, needs temporarily to release from manipulator 76 by the gripping state of semiconductor wafer W, survey The time is spent on fixed, but is able to maintain that gripping state in the present embodiment, so can measure rapidly and easily and partly lead The thickness distribution of body wafer W.
Here, as shown in Figure 4, it is preferred that a pair of of head 52a, 52b are configured to horizontal.The measurement of semiconductor wafer W Region R is in vertical direction, is able to suppress the influence of the warpage as caused by the self weight of semiconductor wafer W.
Moreover it is preferred that bar 54R is air pressurized formula, it is provided with control on linear scale 54 and is supported for bar 54R Connect the accurate adjuster (not shown) for the thrust for being moved to pedestal 74.In this case, it is preferred that by accurate adjuster (not shown) is controlled what is generated from bar 54R to the thrust of pedestal 74 in 0.03MPa or less.If thrust is in the range, Then hardly the movement of mechanical arm (i.e. the movement of semiconductor wafer W) is had an impact, in addition, the present inventor is experimentally true Recognize, is also able to maintain that the abutting state of bar 54R and pedestal 74.
Moreover it is preferred that bar 54R and pedestal 74 are abutted via resin plate (not shown).This is to be able to prevent The caused pollution to semiconductor wafer W of dispersing of the metal powder only generated by the collision of bar 54R and pedestal 74 etc..Resin plate It can be located in some of bar 54R and pedestal 74.
Moreover it is preferred that being pasted with the correction benchmark roughly equal with semiconductor wafer W thickness on manipulator 76 Piece (not shown).For example, preparing thickness if the thickness of semiconductor wafer W with aftermentioned embodiment is mutually all 775 μm 775 μm of correction reference plate.In the manufacturing process of semiconductor wafer, the semiconductor wafer W of set transport path Thickness constant, so the thickness of correction reference plate can be determined suitably.In addition, the shape of correction reference plate is Arbitrarily, rectangle or circle be can be, any shape is also possible to.In addition, the paste position of correction reference plate is appropriate Ground determines, is configured to the position not with the partial coherence for holding semiconductor wafer W.And, it is preferred that it removes Fortune control unit 78 and measurement control unit 56 also there is basis to be desirable for the control that correction is measured the correction of value with reference plate Function.That is, the implementation of the correction of measured value is arbitrary.It can also be that can also be corrected as described below without correction. Specifically, it can be just corrected with the measurement (i.e. every time) of every thickness distribution for carrying out semiconductor wafer W, it can also be more with every progress Secondary measurement carries out 1 correction, can also regularly be corrected.In addition, can certainly randomly be corrected.In addition, The thickness (such as 775 μm) of the semiconductor wafer of measure object can be set as central value, using by school relatively thin by comparison The 2 points of amendments (tilt correction) just combined with reference plate (such as 750 μm) and thicker correction reference plate (such as 800 μm). It can be by executing the thickness for being used to make semiconductor wafer above-mentioned for being stored in and carrying control unit 78 and/or measuring control unit 56 The program that profiling systems 100 act is spent to be controlled.
(the 2nd embodiment: polishing semiconductor wafer system)
It is illustrated using the polishing semiconductor wafer system 200 of Fig. 2 ~ 5 pair according to an embodiment of the present invention.Partly lead Body wafer grinding system 200 has loading unit 10, grind section 20, Storage Department 30, determination part 50, trucking department 70, above-mentioned loading unit 10 move in semiconductor wafer W, and above-mentioned grind section 20 grinds semiconductor wafer W, and above-mentioned Storage Department 30 takes care of semiconductor wafer W, Said determination portion 50 measures the thickness distribution of semiconductor wafer W, and above-mentioned trucking department 70 is respectively in the loading unit via determination part 50 The 1st transport path R21 between 10 and grind section 20 and the 2nd transport path R22 between grind section 20 and determination part 50 are removed Transport semiconductor wafer W.Here, trucking department 70 has mechanical arm 72, pedestal 74, manipulator 76, carries control unit 78, above-mentioned machinery Arm 72 can act in the 1st transport path R21 and the 2nd transport path R22, and above-mentioned pedestal 74 is arranged at the mechanical arm 72 Terminal part 72a, above-mentioned manipulator 76 are arranged via the pedestal 74, hold semiconductor wafer W, the control of above-mentioned carrying control unit 78 by The holding for the semiconductor wafer W that manipulator 76 carries out and the movement of mechanical arm 72.In addition, determination part 50 has determination sensor 52, linear scale 54, measurement control unit 56, said determination sensor 52 measure the thickness of the given area of semiconductor wafer W, on The moving distance for the bar 54R that the measurement of linear scale 54 is retreated is stated, Moving Unit of the said determination control unit 56 in each bar 54R makes The measurement of the thickness of the semiconductor wafer W carried out by determination sensor 52 synchronizes.Also, carry control unit 78 and measurement control unit 56 preferably have function control as follows: in the path of at least one party of the 1st transport path R21 and the 2nd transport path R22, The mechanical arm 72 for the state for holding semiconductor wafer W will be carried to determination part 50, in the state for making pedestal 74 be connected to bar 54R Under, keep mechanical arm 72 and bar 54R the state for holding semiconductor wafer W same in a direction in the advance and retreat direction of bar 54R When it is mobile during, the radial thickness distribution of semiconductor wafer W is measured by determination part 50.In addition, as shown in Fig. 2, It is also possible to the 2nd transport path R22 via Storage Department 50.That is, the 1st transport path R21 is equivalent to and is carried to semiconductor wafer W Path before grind section 20, the 2nd transport path R22 are equivalent to the path being carried to semiconductor wafer W after grind section 20.Separately Outside, it with the thickness distribution of the semiconductor wafer measurement duplicate structure of system 100, adds and measures system 100 with thickness distribution Identical appended drawing reference, the repetitive description thereof will be omitted.
Grind section 20 is the general grinding device for grinding semiconductor wafer W, is able to use double-side polishing apparatus and list Some of face grinding device.In addition, showing schematically intermittent (the バ ッ チ for grinding multiple semiconductor wafer Ws in Fig. 1 Formula) grinding device, but the grinding device of plate-sheet-type (piece leaf formula) also can be used.Generally, by being described in detail later Trucking department 70, semiconductor wafer W is carried to setting table (セ ッ ト テ ー Block Le) 22 from loading unit 10, is being placed in setting table Semiconductor wafer W is configured on loading plate 23 on 22.Later, it is set on grinding device 21 by the manipulator etc. in grind section 20 Semiconductor wafer W, grinding semiconductor chip W are set, semiconductor wafer W is placed in setting table 22 again.
In the present embodiment, also in the same manner as thickness distribution measurement system 100, while holding semiconductor wafer W It being capable of thickness distribution that is easy and accurately measuring semiconductor wafer W.According to the present embodiment, being capable of providing one kind can incite somebody to action The polishing semiconductor wafer system that the thickness distribution of obtained semiconductor wafer W is more accurately fed back to the grinding condition of grind section 20 System.In addition, in the present embodiment, portion 70 can also be handled upside down again in the wafer W of Storage Department 30 by keeping and be carried to measurement Portion 50.Can the thickness to the semiconductor wafer W after grinding measured again.
In the same manner as thickness distribution measurement system 100, it is also preferred that being pasted on manipulator 76 and semiconductor wafer The thickness of W roughly equal correction reference plate (not shown).Here, the surplus of grinding it is larger, measurement grinding before and after Thickness in the case where, it is preferred to use the different step-like correction reference piece of thickness.The shape of correction reference plate is Arbitrarily, rectangle or circle be can be, any shape is also possible to.In addition, the paste position of correction reference plate is appropriate Ground determines, is set to the position not with the partial coherence for holding semiconductor wafer W.And, it is preferred that carry control Portion 78 processed and measurement control unit 56 also there is basis to be desirable for the control function that correction is measured the correction of value with reference plate. That is, the implementation of the correction of measured value is arbitrary.It can also be that can also be corrected as described below without correction.Specifically Ground can be just corrected with the measurement (i.e. every time) of every thickness distribution for carrying out semiconductor wafer W, can also repeatedly be surveyed with every Surely 1 correction is carried out, can also be regularly corrected.In addition, can certainly randomly be corrected.In addition it is also possible to Use 2 points of amendments (tilt correction) having been described above.Control unit 78 and/or measurement control can be carried by executing to be stored in The thickness distribution for making semiconductor wafer above-mentioned in portion 56 measures the program that system 100 acts to be controlled.
In addition, the carrying control unit 78 of the 1st embodiment and the 2nd embodiment is by central processing unit (CPU) Or the suitable processor such as microprocessor (MPU) realizes can have the record portions such as memory, hard disk or input and output to connect Each interstructural information of trucking department 70 and the transmitting of instruction and the movement at each position are passed through execution by mouth, display device etc. It is stored in the thickness distribution for making aforesaid semiconductor chip carried on control unit 78 in advance and measures system 100 and semiconductor The program that wafer grinding system 200 acts controls.Control unit 56 is measured similarly suitably to handle by CPU or MPU etc. Device realizes can to have record portion or input/output interface, display device of memory, hard disk etc. etc., by determination part 50 The transmitting of information and instruction between each composition and the movement at each position are pre-stored on measurement control unit 56 by executing The thickness distribution for making aforesaid semiconductor chip measure the program that system 100 and polishing semiconductor wafer system 200 act To control.
(the thickness distribution measuring method of semiconductor wafer)
Then, to the thickness distribution measuring method for the semiconductor wafer for using above-mentioned polishing semiconductor wafer system 200 One embodiment is illustrated.In the thickness distribution measuring method, on the 1st transport path R21 or the 2nd transport path R22, In the state of semiconductor wafer W is held, semiconductor wafer W is carried to determination part 50, pedestal 74 is made to be connected to bar 54R In the state of, make the state of aforementioned holding mechanical arm 72 and bar 54R in a direction in the advance and retreat direction of bar 54R simultaneously It is mobile, while measuring the radial thickness distribution of semiconductor wafer W.Grinding is carried out in rotational symmetry, so if pair radius portion Divide the thickness distribution of (radius point) to be measured, then the thickness distribution is subjected to symmetrization with the center of semiconductor wafer, thus The thickness distribution of the diameter portion (diameter point) in a direction can be estimated.
It is further preferred, that the measurement of semiconductor wafer W after grinding is measured on the 2nd transport path R22 In the case where, after being temporarily impregnated in aqueous solutions of organic acids, with set speed by after semiconductor wafer W crystal pulling, by semiconductor die Piece W is carried to determination part 50 to measure thickness distribution.But it is arranged to directly for semiconductor wafer W to be carried to determination part 50 Path is also included in the 2nd transport path R22.In addition it is also possible to by by keeping in Storage Department 30 semiconductor wafer W again It is back to grind section 20.Thereby, it is possible to grinding again for the semiconductor wafer W taken care of.In addition, can make in dipping With the aqueous solutions of organic acids for the keeping slot for being filled in Storage Department 30.It in this way, can be by the abradant surface of semiconductor wafer W In the state of remaining hydrophobic surface, the measurement of thickness distribution is carried out, so the precision of thickness distribution can be further increased.The feelings Under condition, it is further preferred that as shown in figure 4, being measured while falling semiconductor wafer W to thickness distribution.This be because For measuring point attachment of the aqueous solution that can be attached to handle part 76b into measurement can be prevented.
(the thickness allowance balance measuring method of semiconductor wafer)
In addition, using above-mentioned polishing semiconductor wafer system 200 semiconductor wafer thickness distribution measuring method the 1st In transport path R21, in the state of semiconductor wafer W is held, semiconductor wafer W is carried to determination part 50, makes platform Seat 74 is connected in the state of bar 54R, and the mechanical arm 72 and bar 54R for making the state of aforementioned holding are in the advance and retreat direction of bar 54R A direction simultaneously moves, while measuring the 1st radial thickness distribution of semiconductor wafer W.Then, by grind section 20 into It,, will in the state of holding semiconductor wafer W on the 2nd transport path R22 after the grinding of capable semiconductor wafer W Semiconductor wafer W is moved to determination part 50, in the state of making pedestal 74 be connected to bar 54R, makes the machine of the state of aforementioned holding Tool arm 72 and bar 54R are simultaneously moved in a direction in the advance and retreat direction of bar 54R, while measuring the diameter of semiconductor wafer W To the 2nd thickness distribution.Also, based on these the 1st and the 2nd thickness distributions, measure the thickness surplus generated by grind section 20 Distribution.In the case that 1st thickness distribution and the 2nd thickness distribution are the thickness distribution of half path portion, if by these thickness distributions with The central symmetry of semiconductor wafer can then estimate the thickness allowance balance of the diameter portion on a direction.
(grinding method of semiconductor wafer)
In addition, the grinding method of the semiconductor wafer of one embodiment of the present invention is based on using above-mentioned semiconductor wafer The thickness distribution of the semiconductor wafer of thickness distribution measuring method measurement sets grinding condition.As previously mentioned, partly being led according to above-mentioned The thickness distribution measuring method of body chip can more accurately carry out the data feedback to grinding condition.Therefore, it can be improved this The grinding precision of grinding method.
In turn, the grinding method of the semiconductor wafer of another embodiment of the present invention is based on using above-mentioned semiconductor wafer Thickness allowance balance measuring method measurement semiconductor wafer thickness allowance balance set grinding condition.As previously mentioned, root According to the thickness allowance balance measuring method of above-mentioned semiconductor wafer, the data feedback to grinding condition can be more accurately carried out. Therefore, it can be improved the grinding precision of this grinding method.
[embodiment]
Hereinafter, the present invention is further described in detail using embodiment, but the present invention is not at all by embodiment below Limitation.
As semiconductor wafer, prepare diameter 300mm, 775 μm of thickness of 3 silicon wafers (hereinafter referred to as " sample 1 ~ 3 "). Then, it is such as showed schematically in Fig. 2 ~ Fig. 5, sample 1 ~ 3 is successively moved in the polishing semiconductor wafer system 200 having been described above Loading unit 10, measurement ground by grind section 20 after sample 1 ~ 3 respective radial direction thickness distribution.
Here, as the linear scale 54 of determination part 50, commercially available " the measuring appliance CE1 system from SMC Corporation is used Arrange (も さ く ん CE1 シ リ ー ズ) " (air pressure cylinder type, analytical unit 0.1mm).On linear scale 54, installation There is accurate adjuster, 0.03MPa is set as to the thrust of pedestal in the state of abutting with pedestal 74.In addition, as determination part 50 determination sensor 52 is divided dry using the commercially available miniature head dummy from Keyemce company (Co., Ltd. キ ー エ Application ス) Relating to laser extensometer " SI-F10/SI-F10U ", (bullhead sandwiches type, and measurement distance is 11.3 ~ 12.35mm, resolution capability (resolution) is 0.1 μm, sampling period is 200 μ s).Determination sensor 52 and linear scale 54 are by measurement control unit 56, bar 54R often stretch 0.1mm, obtain from determination sensor 52 a pair of of head 52a, 52b measure the distance from two sides to silicon wafer Measured value.In addition, using commercially available 6 shaft mechanical arm, the pedestal 74 of SUS is set to terminal part 72a on mechanical arm 72, Resin plate is provided on 74 surface of pedestal.When measuring 1 ~ 3 thickness distribution of sample, identically as Fig. 4, in the vertical direction with Average 15mm/s falls silicon wafer, while measuring the thickness distribution of half path portion of silicon wafer.In turn, with the center of silicon wafer Symmetrization is carried out on the basis of position, obtains the diameter portion thickness distribution in a direction.By grinding for the silicon wafer for being related to sample 1 ~ 3 Thickness distribution indicates in Fig. 6 A, Fig. 7 A, Fig. 8 A respectively after mill.
For compareing, will be related to the silicon wafer thickness distribution of sample 1 ~ 3 with semiconductor wafer with flatness check device come Measurement.It will be related to commercially available nano matt sieve (Na of the silicon wafer thickness distribution from heitian Jinggong Co., Ltd of sample 1 ~ 3 ノ メ ト ロ) measurement.Measurement result is illustrated respectively in Fig. 6 B, Fig. 7 B, in Fig. 8 B.In addition, the silicon wafer of sample 1 ~ 3 will be related to Piece thickness distribution uses the commercially available chip from KLA-Tencor company (ケ ー エ Le エ ー テ ンコール Co., Ltd.) to see Device (WaferSight) is surveyed to measure.Measurement result is illustrated respectively in Fig. 6 C, Fig. 7 C, in Fig. 8 C.
If being respectively compared Fig. 5 ~ Fig. 7, it is able to confirm that, with commercially available semiconductor wafer flatness check device It is identical, it, can be by the respective radial thickness of sample 1 ~ 3 by using polishing semiconductor wafer system 200 according to the invention The tendency of distribution is held in the state of holding silicon wafer by manipulator.According to the thickness of semiconductor wafer according to the invention Profiling systems 100 are spent, are able to confirm that, it is identical with flatness check device as commercially available semiconductor wafer, it is able to confirm that energy It is enough to hold the tendency of the respective radial thickness distribution of sample 1 ~ 3 in the state of holding silicon wafer by manipulator.
Industrial utilizability
In accordance with the invention it is possible to provide a kind of polishing semiconductor wafer system, the polishing semiconductor wafer system can The thickness distribution that is easy and accurately measuring semiconductor wafer while holding semiconductor wafer, thus, it is possible to more acurrate Ground carries out the data feedback to grinding condition.
Description of symbols
10 loading unit
20 grind sections
30 Storage Departments
50 determination parts
52a, b determination sensor
54 linear scales
54R bar
56 measurement control units
70 trucking departments
72 mechanical arms
74 pedestals
76 manipulators
78 carry control unit
The thickness distribution of 100 semiconductor wafers measures system
200 polishing semiconductor wafer systems
R measures region
The 1st transport path of R11, R21
The 2nd transport path of R12, R22
W semiconductor wafer.

Claims (21)

1. a kind of thickness distribution of semiconductor wafer measures system, the thickness distribution measurement system of aforesaid semiconductor chip, which has, is removed Enter portion, Storage Department, determination part, trucking department,
Aforementioned loading unit moves in semiconductor wafer,
Aforementioned Storage Department takes care of aforesaid semiconductor chip,
The thickness distribution of aforementioned determination part measurement aforesaid semiconductor chip,
Aforementioned trucking department respectively the 1st transport path between aforementioned loading unit and aforementioned determination part and aforementioned Storage Department and The 2nd transport path between aforementioned determination part carries aforesaid semiconductor chip, which is characterized in that
Aforementioned trucking department has mechanical arm, pedestal, manipulator, carries control unit,
Aforementioned mechanical arm can act in aforementioned 1st transport path and aforementioned 2nd transport path, and aforementioned pedestal is arranged at this The terminal part of mechanical arm, aforementioned mechanical hand channel are arranged by the pedestal, and aforesaid semiconductor chip is held, aforementioned carrying control unit control The holding for the aforesaid semiconductor chip that system is carried out by aforementioned mechanical hand and the movement of aforementioned mechanical arm,
Aforementioned determination part has determination sensor, linear scale, measurement control unit,
Thickness of the aforementioned determination sensor in the given area of measurement of each unit time aforesaid semiconductor chip, aforementioned linear mark The moving distance for the bar that ruler measurement is retreated, the Moving Unit that aforementioned measurement control unit states bar in each of front make to be sensed by aforementioned measurement The measured value of the thickness for the aforesaid semiconductor chip that device carries out is synchronous.
2. the thickness distribution of semiconductor wafer as described in claim 1 measures system, which is characterized in that
Aforementioned carrying control unit and aforementioned measurement control unit have function control as follows: in aforementioned 1st transport path and the aforementioned 2nd It is aforementioned by the aforementioned mechanical arm for the state for holding aforesaid semiconductor chip is carried in the path of at least one party of transport path Determination part, in the state of making aforementioned pedestal be connected to aforementioned rod, in the aforementioned mechanical arm that makes the state of aforementioned holding and aforementioned Bar is partly led during simultaneously moving in a direction in the advance and retreat direction of aforementioned rod by the measurement of aforementioned determination part is aforementioned The radial thickness distribution of body chip.
3. the thickness distribution of semiconductor wafer as claimed in claim 1 or 2 measures system, which is characterized in that
Aforementioned determination part has the supporting mass of channel-shaped, and the supporting mass of aforementioned channel-shaped has opposed pairs side,
The aforementioned determination sensor of aforementioned determination part is made of a pair of of head of spectral interference laser extensometer,
Aforementioned a pair of head correspondence is configured at an aforementioned counter-lateral quadrents,
The length of aforesaid side portions is bigger than the radius of aforesaid semiconductor chip.
4. the thickness distribution of semiconductor wafer as claimed in claim 3 measures system, which is characterized in that
Aforementioned a pair of head is configured to horizontal.
5. the thickness distribution of semiconductor wafer as claimed in claim 2 measures system, which is characterized in that
Aforementioned rod is air pressurized formula,
Accurate adjuster is set on aforementioned linear scale, and aforementioned precision adjuster control is abutted for aforementioned rod to aforementioned pedestal Mobile thrust,
0.03MPa or less is controlled in the thrust of aforementioned pedestal from what aforementioned rod generated.
6. the thickness distribution of semiconductor wafer as claimed in claim 2 measures system, which is characterized in that
Aforementioned rod and aforementioned pedestal are abutted via resin plate.
7. the thickness distribution of semiconductor wafer as claimed in claim 1 or 2 measures system, which is characterized in that
It is pasted with thickness and the roughly equal correction reference plate of aforesaid semiconductor chip on hand in aforementioned mechanical.
8. the thickness distribution of semiconductor wafer as claimed in claim 7 measures system, which is characterized in that
Aforementioned carrying control unit and aforementioned measurement control unit, which also have, carries out aforementioned survey with aforementioned corrected with reference plate according to hope The control function of the correction of definite value.
9. a kind of polishing semiconductor wafer system, aforesaid semiconductor wafer grinding system have loading unit, grind section, Storage Department, Determination part, trucking department,
Aforementioned loading unit moves in semiconductor wafer,
Aforementioned grind section grinds aforesaid semiconductor chip,
Aforementioned Storage Department takes care of aforesaid semiconductor chip,
The thickness distribution of aforementioned determination part measurement aforesaid semiconductor chip,
Aforementioned trucking department respectively the 1st transport path between the aforementioned loading unit and aforementioned grind section via aforementioned determination part, And the 2nd transport path between aforementioned grind section and aforementioned determination part carries aforesaid semiconductor chip, which is characterized in that
Aforementioned trucking department has mechanical arm, pedestal, manipulator, carries control unit,
Aforementioned mechanical arm can act in aforementioned 1st transport path and aforementioned 2nd transport path, and aforementioned pedestal is arranged at this The terminal part of mechanical arm, aforementioned mechanical hand channel are arranged by the pedestal, and aforesaid semiconductor chip is held, aforementioned carrying control unit control The holding for the aforesaid semiconductor chip that system is carried out by aforementioned mechanical hand and the movement of aforementioned mechanical arm,
Aforementioned determination part has determination sensor, linear scale, measurement control unit,
Thickness of the aforementioned determination sensor in the given area of measurement of each unit time aforesaid semiconductor chip, aforementioned linear mark The moving distance for the bar that ruler measurement is retreated, the Moving Unit that aforementioned measurement control unit states bar in each of front make to be sensed by aforementioned measurement The measured value of the thickness for the aforesaid semiconductor chip that device carries out is synchronous.
10. polishing semiconductor wafer system as claimed in claim 9, which is characterized in that
Aforementioned 2nd transport path is via aforementioned Storage Department.
11. the polishing semiconductor wafer system as described in claim 9 or 10, which is characterized in that
Aforementioned carrying control unit and aforementioned measurement control unit have function control as follows: in aforementioned 1st transport path and the aforementioned 2nd It is aforementioned by the aforementioned mechanical arm for the state for holding aforesaid semiconductor chip is carried in the path of at least one party of transport path Determination part, in the state of making aforementioned pedestal be connected to aforementioned rod, in the aforementioned mechanical arm that makes the state of aforementioned holding and aforementioned Bar is partly led during simultaneously moving in a direction in the advance and retreat direction of aforementioned rod by the measurement of aforementioned determination part is aforementioned The radial thickness distribution of body chip.
12. the polishing semiconductor wafer system as described in claim 9 or 10, which is characterized in that
Aforementioned determination part has the supporting mass of channel-shaped, and the supporting mass of aforementioned channel-shaped has opposed pairs side,
The aforementioned determination sensor of aforementioned determination part is made of a pair of of head of spectral interference laser extensometer,
Aforementioned a pair of head correspondence is configured at an aforementioned counter-lateral quadrents,
The length of aforesaid side portions is bigger than the radius of aforesaid semiconductor chip.
13. polishing semiconductor wafer system as claimed in claim 12, which is characterized in that
Aforementioned a pair of head is configured to horizontal.
14. the polishing semiconductor wafer system as described in claim 9 or 10, which is characterized in that
Aforementioned rod is air pressurized formula,
Accurate adjuster is set on aforementioned linear scale, and aforementioned precision adjuster control is abutted for aforementioned rod to aforementioned pedestal Mobile thrust,
0.03MPa or less is controlled in the thrust of aforementioned pedestal from what aforementioned rod generated.
15. the polishing semiconductor wafer system as described in claim 9 or 10, which is characterized in that
Aforementioned rod and aforementioned pedestal are abutted via resin plate.
16. the polishing semiconductor wafer system as described in claim 9 or 10, which is characterized in that
It is pasted with thickness and the roughly equal correction reference plate of aforesaid semiconductor chip on hand in aforementioned mechanical.
17. polishing semiconductor wafer system as claimed in claim 16, which is characterized in that
Aforementioned carrying control unit and aforementioned measurement control unit, which also have, carries out aforementioned survey with aforementioned corrected with reference plate according to hope The control function of the correction of definite value.
18. the thickness distribution measuring method of a kind of thickness distribution measuring method of semiconductor wafer, aforesaid semiconductor chip uses Polishing semiconductor wafer system described in any one of claim 9 ~ 17, which is characterized in that
In aforementioned 1st transport path or aforementioned 2nd transport path, in the state of aforesaid semiconductor chip is held, by this Semiconductor wafer is carried to aforementioned determination part, in the state of making aforementioned pedestal be connected to aforementioned rod, makes the state of aforementioned holding Aforementioned mechanical arm and aforementioned rod simultaneously moved in a direction in the advance and retreat direction of aforementioned rod, while measuring and aforementioned partly leading The radial thickness distribution of body chip.
19. a kind of thickness allowance balance measuring method of semiconductor wafer, the thickness allowance balance measurement of aforesaid semiconductor chip Method uses polishing semiconductor wafer system described in any one of claim 9 ~ 17, which is characterized in that
In aforementioned 1st transport path, in the state of aforesaid semiconductor chip is held, by the semiconductor wafer to aforementioned survey Determine portion's carrying, in the state of making aforementioned pedestal be connected to aforementioned rod, makes the aforementioned mechanical arm of the state of aforementioned holding and aforementioned Bar simultaneously moves in a direction in the advance and retreat direction of aforementioned rod, while measuring radial the 1st of aforesaid semiconductor chip Thickness distribution,
In aforementioned 2nd transport path, in the state of aforesaid semiconductor chip is held, by the semiconductor wafer to aforementioned survey Determine portion's carrying, in the state of making aforementioned pedestal be connected to aforementioned rod, makes the aforementioned mechanical arm of the state of aforementioned holding and aforementioned Bar simultaneously moves in a direction in the advance and retreat direction of aforementioned rod, while measuring radial the 2nd of aforesaid semiconductor chip Thickness distribution,
Based on aforementioned 1st thickness distribution and aforementioned 2nd thickness distribution, the thickness allowance balance generated by aforementioned grind section is measured.
20. a kind of grinding method of semiconductor wafer, which is characterized in that the grinding method of aforesaid semiconductor chip is based on the right to use Benefit require 18 described in the thickness distribution of semiconductor wafer of thickness distribution measuring method measurement of semiconductor wafer ground to set Abrasive stick part.
21. a kind of slice lapping method of semiconductor die, which is characterized in that the grinding method of aforesaid semiconductor chip is based on the right to use Benefit require 19 described in semiconductor wafer thickness allowance balance measuring method measurement semiconductor wafer thickness allowance balance To set grinding condition.
CN201611138706.XA 2015-12-18 2016-12-12 The thickness distribution of semiconductor wafer measures system and method, grinding system and grinding method, thickness allowance balance measuring method Active CN106994644B (en)

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