CN106987810A - Crucible thermal field control device and deposition system is deposited - Google Patents
Crucible thermal field control device and deposition system is deposited Download PDFInfo
- Publication number
- CN106987810A CN106987810A CN201710375010.7A CN201710375010A CN106987810A CN 106987810 A CN106987810 A CN 106987810A CN 201710375010 A CN201710375010 A CN 201710375010A CN 106987810 A CN106987810 A CN 106987810A
- Authority
- CN
- China
- Prior art keywords
- evaporation crucible
- crucible
- thermal field
- temperature
- reflecting plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/243—Crucibles for source material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/542—Controlling the film thickness or evaporation rate
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Crucible thermal field control device is deposited the present invention relates to one kind, it includes：Crucible, heater is deposited；Some temperature detecting units, the temperature for detecting some test points on the evaporation crucible；Some reflecting plates, are arranged at the periphery of the evaporation crucible, and for reflecting heat to evaporation crucible；And control unit, the temperature detected based on some temperature detecting units, control some reflecting plate movements to adjust the spacing between each reflecting plate and the evaporation crucible.Above-mentioned evaporation crucible thermal field control device, control unit is according to the observed temperature of each test point, independently control each reflecting plate, make the reflecting plate of the high areas adjacent of evaporation crucible temperature away from evaporation crucible, the reflecting plate of the low areas adjacent of temperature is close to evaporation crucible, so that whole thermal field is more homogeneous, so that vapor deposition source is heated consistent, the thicknesses of layers ultimately formed is consistent.Present invention also offers a kind of deposition system.
Description
Technical field
The present invention relates to display field, more particularly to a kind of evaporation crucible thermal field control in display panel manufacturing process
Device and deposition system processed.
Background technology
In the manufacturing process of display panel, particularly in the manufacturing process of OLED display panel, it will usually use evaporation
Technique forms film layer.When operation is deposited, typically vapor deposition source is placed in evaporation crucible, then evaporation crucible added
Heat, makes vapor deposition source be heated, and evaporation crucible is left in gasification, and last vapor deposition source is plated on base material to be deposited, so as to be deposited
Film layer is formed on base material.
But, formed film layer is deposited at present, general subregion is thicker, and subregion is relatively thin, that is, the film layer formed
Uneven thickness, this will have a strong impact on the quality of display panel.
The content of the invention
Based on this, it is necessary to which there is provided a kind of energy for the problem of thicknesses of layers formed for being deposited in the prior art is uneven
Enough form the evaporation crucible thermal field control device of film layer in uniform thickness.
One kind evaporation crucible thermal field control device, including：
Crucible is deposited；
Heater, for the evaporation crucible heating；
Some temperature detecting units, the temperature for detecting some test points on the evaporation crucible；
Some reflecting plates, are arranged at the periphery of the evaporation crucible, and for reflecting heat to evaporation crucible；
And control unit, the temperature detected based on some temperature detecting units, control some reflecting plates
Move to adjust the spacing between each reflecting plate and the evaporation crucible.
The temperature of some test points on above-mentioned evaporation crucible thermal field control device, temperature detecting unit detection evaporation crucible,
Then control unit independently controls each reflecting plate according to the observed temperature of each test point, makes evaporation crucible temperature high
The reflecting plate of areas adjacent is away from evaporation crucible, and the reflecting plate of the low areas adjacent of temperature is close to evaporation crucible, so that entirely
Thermal field is more homogeneous, and then the temperature in each region of whole evaporation crucible is consistent as far as possible, so that vapor deposition source heated one
Cause, evaporation rate is consistent, and the thicknesses of layers ultimately formed is consistent.
In one of the embodiments, the reflecting plate is corresponded with the temperature detecting unit and set, the control
The temperature that unit is detected based on each temperature detecting unit, controls its corresponding reflecting plate movement with closer or far from institute
State evaporation crucible.
In one of the embodiments, the reflecting plate is respectively symmetrically distributed in the both sides of the evaporation crucible.
In one of the embodiments, the evaporation crucible thermal field control device also includes being correspondingly arranged with the reflecting plate
And for moving some tracks of the reflecting plate.
In one of the embodiments, the track is gear roller bearing.
In one of the embodiments, the surface of the reflecting plate is provided with waved flute.
In one of the embodiments, the temperature detecting unit includes being attached at the heat of the lateral wall of the evaporation crucible
Galvanic couple.
In one of the embodiments, the thermocouple is attached in the middle part of the lateral wall of the evaporation crucible.
In one of the embodiments, the heater includes enclosing the heater strip located at the evaporation crucible periphery.
Present invention also offers a kind of deposition system.
A kind of deposition system, including evaporation crucible thermal field control device provided by the present invention.
Above-mentioned deposition system, due to crucible thermal field control device is deposited using provided by the present invention, so whole evaporation
The temperature in each region of crucible is consistent as far as possible, so that vapor deposition source is heated consistent, evaporation rate is consistent, the film ultimately formed
Layer consistency of thickness.
Brief description of the drawings
Fig. 1 is the top view of the evaporation crucible thermal field control device of one embodiment of the invention.
Fig. 2 is the right view that crucible thermal field control device is deposited in Fig. 1.
Embodiment
In order to make the purpose , technical scheme and advantage of the present invention be clearer, it is right below in conjunction with embodiment
The present invention is further elaborated.It should be appreciated that embodiment described herein is only to explain the present invention,
It is not intended to limit the present invention.
Unless otherwise defined, all of technologies and scientific terms used here by the article is with belonging to technical field of the invention
The implication that technical staff is generally understood that is identical.Term used in the description of the invention herein is intended merely to description tool
The purpose of the embodiment of body, it is not intended that in the limitation present invention.Term as used herein " and/or " including one or more
The arbitrary and all combination of related Listed Items.
Referring to Fig. 1-2, the evaporation crucible thermal field control device of one embodiment of the invention, including evaporation crucible 100, heating dress
Put (not shown), some temperature detecting units 300, some reflecting plates 400 and control unit.
Wherein, the main function of evaporation crucible 100 is to hold vapor deposition source.It is deposited in crucible 100 provided with receiving vapor deposition source
Cavity, some openings 101 for being available for vapor deposition source to overflow are offered at the top of evaporation crucible 100.In the present embodiment, earthenware is deposited
Crucible 100 is substantially in rectangular-shape.Be deposited crucible 100 opening 101 linearly arrange, more specifically, opening 101 along parallel to
The long sideline property arrangement of cuboid.The present invention is not particularly limited to concrete structure and material that crucible is deposited, this area skill
Art personnel can select suitable concrete structure and material according to actual conditions, will not be repeated here.
Wherein, the main function of heater is evaporation crucible 100 to be heated, so that vapor deposition source is by thermal evaporation.At this
In embodiment, heater includes enclosing the heater strip located at the periphery of evaporation crucible 100.Can so make evaporation crucible 100 by
Heat is more uniform.It is, of course, understood that the heater of the present invention is not limited to heater strip, it can also be other and add
Thermal element, will not be repeated here.
Wherein, the main function of temperature detecting unit 300 is that the temperature of some test points on crucible 100 is deposited for detecting
Degree.That is, being correspondingly arranged a temperature detecting unit 300, the temperature on each test point being deposited on crucible 100
Detection unit 300 obtains the temperature of the evaporation crucible 100 at corresponding test point.
In the present embodiment, temperature detecting unit 300 includes the thermocouple for being attached at the lateral wall 110 of evaporation crucible 100.
Preferably, thermocouple is attached in the middle part of the lateral wall of evaporation crucible 100.Evaporation so can be further set to form the thickness of film layer
It is more uniform.
It is, of course, understood that the temperature detecting unit 300 of the present invention is not limited to thermocouple, this can also be
Art personnel think suitable other temperature elements, will not be repeated here.
Wherein, the main function of reflecting plate 400 is, for the evaporation reflection heat of crucible 100；Reflecting plate 400 is arranged at
The periphery of crucible 100 is deposited.Preferably, reflecting plate 400 is located at heater strip periphery and has certain spacing distance apart from heater strip.
In the present embodiment, the surface of reflecting plate 400 is provided with waved flute.Can so it make thermal field more uniform.
Preferably, reflecting plate is moved for convenience, and the evaporation crucible thermal field control device 1000 of the present embodiment also includes using
In some tracks 600 of mobile reflecting plate 400.Some tracks 600 are corresponded with some reflecting plates 400 and set；That is,
Each reflecting plate 400 has corresponding track 600, so as to facilitate the reflecting plate 400 to move.
In the present embodiment, track 600 is gear roller bearing.So the displacement of reflecting plate can be made more accurately to control
System.It is, of course, understood that the track 600 of the present invention is not limited to gear roller bearing, can also be other can move anti-
The track of plate 400 is penetrated, be will not be repeated here.
Wherein, the main function of control unit is, the temperature detected based on some temperature detecting units 300, if control
Dry reflecting plate 400 moves to adjust the spacing between each reflecting plate 400 and evaporation crucible 100.That is, some temperature inspections
The temperature for surveying each test point of evaporation crucible 100 that unit 300 is detected sends control unit to, and control unit is to temperature data
Analyzed, then control each reflecting plate 400 to move so that its evaporation crucible 100 between spacing increase or reduce or
Keep constant.
Preferably, reflecting plate 400 is corresponded with temperature detecting unit 300 and set, and control unit is examined based on each temperature
The temperature that unit 300 is detected is surveyed, controls its corresponding reflecting plate 400 to move with closer or far from evaporation crucible 100.Namely
Say, if 300 detection temperatures of some temperature detecting unit are higher, control unit is controlled corresponding to the temperature detecting unit 300
Reflecting plate 400 away from evaporation crucible 100 so that reflected intensity weaken, to reduce the temperature of the test point；If some temperature
300 detection temperatures of detection unit are relatively low, then control unit controls the reflecting plate 400 corresponding to the temperature detecting unit 300 to lean on
Nearly evaporation crucible, so that reflected intensity strengthens, to improve the temperature of the test point.
It is highly preferred that the temperature that control unit is detected according to some temperature detecting units 300, calculates mean temperature,
Be then based on the difference of temperature that the temperature detecting unit 300 detected and mean temperature, adjust its corresponding reflecting plate 400 with
The spacing between crucible 100 is deposited.
In the present embodiment, some reflecting plates 400 are symmetrically distributed in the both sides of evaporation crucible 100.Accordingly, some temperature
Detection unit 300 is symmetrically distributed in the two side of evaporation crucible 100, namely some test points are symmetrically distributed in evaporation crucible 100
Two side 110 on.
Some test points on above-mentioned evaporation crucible thermal field control device, the detection evaporation crucible 100 of temperature detecting unit 300
Temperature, then control unit independently control each reflecting plate 400 according to the observed temperature of each test point, make evaporation crucible
The reflecting plate of the high areas adjacent of 100 temperature is away from evaporation crucible 100, and the reflecting plate 400 of the low areas adjacent of temperature is close to steaming
Crucible 100 is plated, so that whole thermal field is more homogeneous, and then the temperature in each region of whole evaporation crucible 100 is protected as far as possible
Hold consistent, so that vapor deposition source is heated consistent, evaporation rate is consistent, and the thicknesses of layers ultimately formed is consistent.
In the case of reflecting plate is not moved, using above-mentioned evaporation crucible thermal field control device, film layer can be made thick
The uniformity of degree is lifted to 0.93% from 3%.
Present invention also offers a kind of deposition system.
A kind of deposition system, including evaporation crucible thermal field control device provided by the present invention.
It is, of course, understood that deposition system also includes other parts, other parts can use art technology
Modular construction well known to personnel, will not be repeated here.
Above-mentioned deposition system, due to crucible thermal field control device is deposited using provided by the present invention, so whole evaporation
The temperature in each region of crucible is consistent as far as possible, so that vapor deposition source is heated consistent, evaporation rate is consistent, the film ultimately formed
Layer consistency of thickness.
Each technical characteristic of embodiment described above can be combined arbitrarily, to make description succinct, not to above-mentioned reality
Apply all possible combination of each technical characteristic in example to be all described, as long as however, the combination of these technical characteristics is not deposited
In contradiction, the scope of this specification record is all considered to be.
Embodiment described above only expresses the several embodiments of the present invention, and it describes more specific and detailed, but simultaneously
Can not therefore it be construed as limiting the scope of the patent.It should be pointed out that coming for one of ordinary skill in the art
Say, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to the protection of the present invention
Scope.Therefore, the protection domain of patent of the present invention should be determined by the appended claims.
Claims (10)
1. one kind evaporation crucible thermal field control device, it is characterised in that including：
Crucible is deposited；
Heater, for the evaporation crucible heating；
Some temperature detecting units, the temperature for detecting some test points on the evaporation crucible；
Some reflecting plates, are arranged at the periphery of the evaporation crucible, and for reflecting heat to evaporation crucible；
And control unit, the temperature detected based on some temperature detecting units, control some reflecting plate movements
To adjust each spacing between the reflecting plate and the evaporation crucible.
2. evaporation crucible thermal field control device according to claim 1, it is characterised in that the reflecting plate and the temperature
Detection unit, which is corresponded, to be set, and the temperature that described control unit is detected based on each temperature detecting unit controls it
Corresponding reflecting plate movement is with closer or far from the evaporation crucible.
3. evaporation crucible thermal field control device according to claim 2, it is characterised in that the reflecting plate respectively symmetrically divides
It is distributed in the both sides of the evaporation crucible.
4. the evaporation crucible thermal field control device according to any one of claims 1 to 3, it is characterised in that the evaporation earthenware
Some tracks that crucible thermal field control device also includes being correspondingly arranged with the reflecting plate and is used to move the reflecting plate.
5. evaporation crucible thermal field control device according to claim 4, it is characterised in that the track is gear roller bearing.
6. the evaporation crucible thermal field control device according to any one of claims 1 to 3, it is characterised in that the reflecting plate
Surface be provided with waved flute.
7. the evaporation crucible thermal field control device according to any one of claims 1 to 3, it is characterised in that the temperature inspection
Survey the thermocouple that unit includes being attached at the lateral wall of the evaporation crucible.
8. evaporation crucible thermal field control device according to claim 7, it is characterised in that the thermocouple is attached at described
In the middle part of the lateral wall that crucible is deposited.
9. the evaporation crucible thermal field control device according to any one of claims 1 to 3, it is characterised in that the heating dress
Put the heater strip that the evaporation crucible periphery is located at including enclosing.
10. a kind of deposition system, it is characterised in that control dress including the evaporation crucible thermal field described in any one of claim 1~9
Put.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710375010.7A CN106987810A (en) | 2017-05-24 | 2017-05-24 | Crucible thermal field control device and deposition system is deposited |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710375010.7A CN106987810A (en) | 2017-05-24 | 2017-05-24 | Crucible thermal field control device and deposition system is deposited |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106987810A true CN106987810A (en) | 2017-07-28 |
Family
ID=59420649
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710375010.7A Pending CN106987810A (en) | 2017-05-24 | 2017-05-24 | Crucible thermal field control device and deposition system is deposited |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106987810A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107805783A (en) * | 2017-11-30 | 2018-03-16 | 京东方科技集团股份有限公司 | Evaporation source, evaporated device and evaporation control method |
| CN108754429A (en) * | 2018-08-28 | 2018-11-06 | 京东方科技集团股份有限公司 | A kind of evaporation source |
| CN109468597A (en) * | 2019-01-08 | 2019-03-15 | 京东方科技集团股份有限公司 | A kind of thicknesses of layers homogeneity method of adjustment and its adjustment device |
| CN110499492A (en) * | 2019-09-19 | 2019-11-26 | 京东方科技集团股份有限公司 | A kind of evaporation coating device and its evaporation coating method |
| CN113088892A (en) * | 2021-03-31 | 2021-07-09 | 京东方科技集团股份有限公司 | Vapor deposition source and vapor deposition device |
| CN113355639A (en) * | 2021-06-08 | 2021-09-07 | 京东方科技集团股份有限公司 | Temperature detection device and evaporation equipment |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2001011105A1 (en) * | 1999-08-04 | 2001-02-15 | General Electric Company | Electron beam physical vapor deposition apparatus with ingot magazine |
| US20020152959A1 (en) * | 2001-04-18 | 2002-10-24 | Tae-Wan Lee | Cold wall chemical vapor deposition apparatus and cleaning method of a chamber for the same |
| CN103774095A (en) * | 2012-10-22 | 2014-05-07 | 三星显示有限公司 | Linear deposition source and vacuum deposition apparatus including the same |
| CN103938161A (en) * | 2014-04-29 | 2014-07-23 | 京东方科技集团股份有限公司 | Evaporating device and evaporating method of substrate |
-
2017
- 2017-05-24 CN CN201710375010.7A patent/CN106987810A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2001011105A1 (en) * | 1999-08-04 | 2001-02-15 | General Electric Company | Electron beam physical vapor deposition apparatus with ingot magazine |
| US20020152959A1 (en) * | 2001-04-18 | 2002-10-24 | Tae-Wan Lee | Cold wall chemical vapor deposition apparatus and cleaning method of a chamber for the same |
| CN103774095A (en) * | 2012-10-22 | 2014-05-07 | 三星显示有限公司 | Linear deposition source and vacuum deposition apparatus including the same |
| CN103938161A (en) * | 2014-04-29 | 2014-07-23 | 京东方科技集团股份有限公司 | Evaporating device and evaporating method of substrate |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107805783A (en) * | 2017-11-30 | 2018-03-16 | 京东方科技集团股份有限公司 | Evaporation source, evaporated device and evaporation control method |
| CN107805783B (en) * | 2017-11-30 | 2023-12-19 | 京东方科技集团股份有限公司 | Evaporation source, evaporation equipment and evaporation control method |
| CN108754429A (en) * | 2018-08-28 | 2018-11-06 | 京东方科技集团股份有限公司 | A kind of evaporation source |
| CN109468597A (en) * | 2019-01-08 | 2019-03-15 | 京东方科技集团股份有限公司 | A kind of thicknesses of layers homogeneity method of adjustment and its adjustment device |
| WO2020143439A1 (en) * | 2019-01-08 | 2020-07-16 | 京东方科技集团股份有限公司 | Film layer thickness adjustment method and film layer thickness adjustment apparatus |
| CN109468597B (en) * | 2019-01-08 | 2020-11-06 | 京东方科技集团股份有限公司 | Method and device for adjusting thickness uniformity of film layer |
| CN110499492A (en) * | 2019-09-19 | 2019-11-26 | 京东方科技集团股份有限公司 | A kind of evaporation coating device and its evaporation coating method |
| CN113088892A (en) * | 2021-03-31 | 2021-07-09 | 京东方科技集团股份有限公司 | Vapor deposition source and vapor deposition device |
| CN113088892B (en) * | 2021-03-31 | 2023-02-28 | 京东方科技集团股份有限公司 | Vapor deposition source and vapor deposition device |
| CN113355639A (en) * | 2021-06-08 | 2021-09-07 | 京东方科技集团股份有限公司 | Temperature detection device and evaporation equipment |
| CN113355639B (en) * | 2021-06-08 | 2023-09-12 | 京东方科技集团股份有限公司 | Temperature detection device and evaporation equipment |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106987810A (en) | Crucible thermal field control device and deposition system is deposited | |
| CN104233195B (en) | Evaporation equipment and evaporation method | |
| KR101358591B1 (en) | Method and apparatus for characterizing a glass ribbon | |
| WO2015172463A1 (en) | Measurement apparatus and coating device | |
| US20130130184A1 (en) | Apparatus and Method for Controlling Wafer Temperature | |
| US20150055676A1 (en) | Method and apparatus for determining thermal conductivity and thermal diffusivity of a heterogeneous material | |
| US20100275841A1 (en) | Deposition source | |
| JP2014515789A5 (en) | ||
| JP2014515789A (en) | Measuring apparatus and method for vapor deposition applications | |
| US20140170301A1 (en) | Thin film deposition apparatus and method | |
| Struminska et al. | Designing of special clothing based on experimental researches of material properties | |
| KR102117088B1 (en) | Manufaturing device of organic light emitting diode display and method for manufacturing organic light emitting diode display using the same | |
| Akoshima et al. | Thermal diffusivity of carbon materials as candidate reference materials | |
| Valarezo et al. | Elastic and anelastic behavior of TBCs sprayed at high-deposition rates | |
| CN105296928A (en) | Line source and thin film evaporation device comprising the same | |
| JP2017067508A (en) | Thermophysical property measuring apparatus and thermophysical property measuring method | |
| Gramazio et al. | New data processing of local heat transfer coefficient inside a rectangular channel | |
| CN112522675B (en) | Feedback control system and method based on heating surface pit test | |
| CN107709604A (en) | For measuring the method and sedimentation rate control system of sedimentation rate | |
| CN103014620A (en) | OLED (Organic Light Emitting Diode) glass substrate thermal evaporator | |
| CN207002834U (en) | A kind of evaporation rate measurement apparatus | |
| CN109708602A (en) | Measuring device | |
| WO2017050355A1 (en) | Diffusion barrier for oscillation crystals, measurement assembly for measuring a deposition rate and method thereof | |
| Jang et al. | Thermal conductivity of ZrO2-4 mol% Y2O3 thin coatings by pulsed thermal imaging method | |
| JP2014019883A (en) | Vacuum deposition and vacuum deposition method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20170728 |