CN106982053A - A kind of flash intelligent solid-state relay - Google Patents
A kind of flash intelligent solid-state relay Download PDFInfo
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- CN106982053A CN106982053A CN201710170545.0A CN201710170545A CN106982053A CN 106982053 A CN106982053 A CN 106982053A CN 201710170545 A CN201710170545 A CN 201710170545A CN 106982053 A CN106982053 A CN 106982053A
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- 230000005622 photoelectricity Effects 0.000 claims abstract description 26
- 230000003068 static effect Effects 0.000 claims abstract description 4
- 238000001514 detection method Methods 0.000 claims description 22
- 238000005070 sampling Methods 0.000 claims description 18
- 230000005611 electricity Effects 0.000 claims description 4
- 230000001939 inductive effect Effects 0.000 abstract description 3
- 230000001012 protector Effects 0.000 abstract description 2
- 238000011897 real-time detection Methods 0.000 abstract description 2
- 230000002441 reversible effect Effects 0.000 abstract description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000001052 transient effect Effects 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000002457 bidirectional effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010892 electric spark Methods 0.000 description 1
- 238000009760 electrical discharge machining Methods 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
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- 239000004065 semiconductor Substances 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
- H03K17/785—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled controlling field-effect transistor switches
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Abstract
A kind of flash intelligent solid-state relay, include band current limliting and drive LED light MOS relays M1 and constant-current driving LED photoelectricity pump M2, load power source voltage V2 is electrically concatenated via constant-current source is controlled in the PhotoMOS relay M1 and photoelectricity pump M2, and PhotoMOS relay M1 and photoelectricity the pump M2, which is combined, to be formed current limliting drive signal and isolate the topological structure with minimum quiescent dissipation with forceful electric power.With multinomial defencive function：Short-circuit protection, overload protection, overvoltage protection, overheat protector, inductive load are protected, fallen on the ground and the protection of power down protection, electrostatic discharge (ESD) protection and reverse power connection; there is the common ground real-time detection function of load current I load a ten thousandths simultaneously; static working current≤10uA, reliability and service life ratio electromagnetic relay improve two orders of magnitude.
Description
Technical field
The present invention relates to electronic device field, especially a kind of flash intelligent solid-state relay.
Background technology
Traditional electromagnetic relay have it is economical, reliable, without quiescent dissipation, power utilization rate be high and input and output loop
Between high degree of isolation, the advantages of be easily achieved high-power.But, there is inherent defect in electromagnetic relay：
The mechanical contact structure of electromagnetic relay has the shortcomings that to switch transient jitter so that：(1) switching delay time must
High-speed applications must be limited up to 7ms；(2) there are electric spark and electromagnetic radiation to environment；(3) spark eroding, metal oxidation and
Elastic fatigue declines reliability of contact, restricted lifetime；(4) low-power consumption of relay intelligent and Digital Control is not adapted to
Driving needs.
The output circuit of solid-state relay is " noncontacting switch " that solid-state relay is realized under the control of trigger signal
Break-make switches.The main absorption circuit by output device (chip) and a transient state inhibitory action of output circuit is constituted, and is also wrapped sometimes
Include feedback circuit.
At present, the output device that various solid-state relays are used mainly has transistor (Transistor), unidirectionally may be used
Control silicon (Thyristor or SCR), bidirectional triode thyristor (Triac), metal-oxide-semiconductor field effect transistor (MOSFET), insulated gate bipolar transistor
(IGBT) etc..
Solid-state relay overcomes the shortcoming of electromagnetic relay to a certain extent, with controllable silicon or huge transistor conduct
Solid switch element, improves relay service life and the adaptability used in adverse circumstances；Small-signal driving force
And speed-sensitive switch characteristic easily realizes intelligentized control method.But, this solid-state relay also has the shortcomings that it：(1) input and defeated
Go out between control loop and do not isolate, the component of input circuit is easily damaged for inductive load.(2) controllable silicon or huge
Transistor all has larger saturation voltage drop so that the power utilization efficiency reduction of this solid-state relay, oneself power consumption are big.
(3) it is static to maintain electric current big.
The switch element of solid-state relay starts to use power MOS pipe, and the saturation voltage drop solved in the case of high current is inclined
The voltage threshold loss problem of greatly/switching tube of determining.Common solution is to need to introduce charge pump circuit, but brings electromagnetism
Radiation effect.
The content of the invention
In order to solve above-mentioned problems of the prior art, the present invention provides a kind of flash intelligent solid-state relay.
A kind of flash intelligent solid-state relay, includes band current limliting and drives LED light MOS relays M1 and constant-current driving LED
Photoelectricity pump M2, load power source voltage V2 are electrically concatenated via constant-current source is controlled in the PhotoMOS relay M1 and photoelectricity pump M2, institute
State PhotoMOS relay M1 and photoelectricity pump M2 and combine to form current limliting drive signal and isolate the topology with minimum quiescent dissipation with forceful electric power
Structure；It is high-end that control signal voltage V1 is connected to PhotoMOS relay M1 driving sides, driving side low side ground connection；Load power source voltage
The driving side that V2 is connected to photoelectricity pump M2 via constant-current source is high-end, and driving side low side is connected to PhotoMOS relay M1 controlled side
High-end, controlled side low side connects power supply together with a ten thousandth load current detection sampling resistor r, load resistance RL common low side
Ground.Load power source voltage V2 is connected to that power electronic switching K2 is high-end, and power electronic switching K2 low side is connected to current detecting
It is high-end, power electronic switching K2 control end is connected to the high-end of electronic switch K1；Electronic switch K1 high-end electric connection
In the high-end of the controlled sides of photoelectricity pump M2, electronic switch K1 low side is electrically connected in the controlled side low sides of photoelectricity pump M2, power
Electronic switch K2 and current detecting node；Electronic switch K1 control end is connected to the output end of control logic, control logic
Input be electrically connected at the outlet side of current detecting；The low side of current detecting is connected to the high-end of load RL, load RL's
Low side is grounded；The outlet side of current detecting is electrically connected at the high-end of a ten thousandth load current detection sampling resistor r, ten thousand/
One load current detection sampling resistor r low side is with being connected to load RL low side power supply.
As a kind of preferred scheme, current detecting constitutes 1/10000 proportional load electric current in real time altogether with operational amplifier
Ground detection part；Load current I-load produces pressure drop by R-sense at resistance R5, resistance R6 two ends, and resistance R6 electrically connects
No. 2 nodes are connected to, No. 2 nodes are connected to No. 4 nodes via resistance R7, and load end is connected to No. 1 node, No. 1 via resistance R5
Node is connected to No. 3 nodes via resistance R8, resistance R is provided between No. 3 nodes and No. 4 nodes, No. 4 nodes are via detection
Circuit ground.
As a kind of preferred scheme, the resistance size of the resistance R is not zero.
As a kind of preferred scheme, when control signal voltage V1 signals are low, control signal is worked as in whole system shut-off
During voltage V1 input high levels (more than 1.2V), it is only necessary to 3-5mA input currents can (＜ 2mS) open power electronic switching K2,
Driving load RL；Now electronic switch K1 is disconnected, and power electronic switching K2 is driven by photoelectricity pump M2 voltages and opened；Power electronic is opened
Close K2 is driven through the controlled logic control of detecting element, and detecting element detects system and anomaly, control logic occurs
Trigger electronic switch K1, switch-off power electronic switch K2.
Compared to the prior art the present invention, the advantage is that：
(1) (every from electric pressure≤1500V) is isolated in input and output entirely, and LED light is electrically coupled.Driving current 3-10mA, driving electricity
Pressure is minimum (to be configured different capacity MOST on demand to realize) to 1.2V, output current 10A-30A.Switch time is compared with electromagnetism relay
Fast 2-3 times of device, can work in a PWM mode.
(2) N-channel MOS FET power tubes are used, inside uses Integrated Light electric pump M2, just can be real without charge pump circuit
Existing flash driving.And (output a ten thousandth load current, precision is better than 5%) with load current real-time detection function.Work
Make -40 DEG C -+120 DEG C of temperature range；Various resistive, the perceptual or capacitive loads powered suitable for DC12-24V.
(3) there is multinomial defencive function：Short-circuit protection, overload protection, overvoltage protection, overheat protector, inductive load protection,
Fall on the ground and the protection of power down protection, electrostatic discharge (ESD) protection and reverse power connection.Static working current≤10uA.Reliability and service life
Two orders of magnitude are improved than electromagnetic relay.
The additional aspect and advantage of the present invention will be set forth in part in the description, and will partly become from the following description
Obtain substantially, or recognized by the practice of the present invention.
Brief description of the drawings
In order to illustrate more clearly about the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existing
There is the accompanying drawing used required in technology description to be briefly described, it should be apparent that, drawings in the following description are only this
Some embodiments of invention, for those of ordinary skill in the art, on the premise of not paying creative work, can be with
Other accompanying drawings are obtained according to these accompanying drawings.
Fig. 1 is Phototube Coupling of the present invention, coupled voltages pump trigger control circuit schematic diagram；
Fig. 2 is the real-time Cleaning Principle schematic diagram of load current of the present invention.
Embodiment
The exemplary embodiment of the disclosure is more fully described below with reference to accompanying drawings.Although showing the disclosure in accompanying drawing
Exemplary embodiment, it being understood, however, that may be realized in various forms the disclosure without should be by embodiments set forth here
Limited.On the contrary, these embodiments are provided to facilitate a more thoroughly understanding of the present invention, and can be by the scope of the present disclosure
Complete conveys to those skilled in the art.
In the description of the invention, it is to be understood that term " longitudinal direction ", " transverse direction ", " on ", " under ", "front", "rear",
The orientation or position relationship of the instruction such as "left", "right", " vertical ", " level ", " top ", " bottom ", " interior ", " outer " is based on accompanying drawing institutes
The orientation or position relationship shown, is for only for ease of the description present invention, rather than indicate or imply that the device or element of meaning must
There must be specific orientation, with specific azimuth configuration and operation, therefore be not considered as limiting the invention.
First, technical term definition is carried out to the diagram in accompanying drawing 1 and accompanying drawing 2：' drawn above electronic switch K1 ' top
Line is referred to as the high-end of electronic switch K1, and beneath face lead-out wire is referred to as electronic switch K1 low side, and right flank lead-out wire is referred to as electronics
Switch K1 control end.
' lead-out wire is referred to as the high-end of power electronic switching K2 above on power electronic switching K2 ' MOSFET tops, and beneath face is drawn
Outlet is referred to as power electronic switching K2 low side, and left surface lead-out wire is referred to as power electronic switching K2 control end.
' PhotoMOS relay M1 ' left surface is referred to as driving side, and it is high-end that left surface top lead-out wire is referred to as driving side, left side
Face bottom lead-out wire is referred to as driving side low side.PhotoMOS relay M1 right flank is referred to as controlled side, and right flank top lead-out wire claims
High-end for controlled side, right flank bottom lead-out wire is referred to as controlled side low side
' photoelectricity pump M2 ' left surface is referred to as driving side, and it is high-end that left surface top lead-out wire is referred to as driving side, under left surface
Portion's lead-out wire is referred to as driving side low side.Photoelectricity pump M2 right flank is referred to as controlled side, and right flank top lead-out wire is referred to as controlled side
High-end, right flank bottom lead-out wire is referred to as controlled side low side.
' control logic ' pushes up the output end that lead-out wire above is referred to as control logic, and right flank lead-out wire is referred to as control logic
Input.
Lead-out wire is referred to as the high-end of current detecting above on ' current detecting ' top, and beneath face lead-out wire is referred to as the low of current detecting
End.Current detecting left surface is referred to as the outlet side of current detecting, and left surface top lead-out wire is referred to as current detecting and exports high-end, left
Side lower lead-out wire is referred to as current detecting output low side.
' load RL ' upper terminals are referred to as loading the high-end of RL, and load RL lower terminals are referred to as the low side for loading RL.
' a ten thousandth load current detection sampling resistor r upper terminals are referred to as a ten thousandth load current detection sampling electricity
The high-end of r is hindered, a ten thousandth load current detection sampling resistor r lower terminals are referred to as a ten thousandth load current detection sampling electricity
Hinder r low side.
' load power source voltage V2 ' and ' control signal voltage V1 '.
As shown in accompanying drawing 1 and accompanying drawing 2, a kind of flash intelligent solid-state relay, include band current limliting driving LED light MOS after
Electrical equipment M1 and constant-current driving LED photoelectricity pump M2, load power source voltage V2 electrically concatenated via constant-current source be controlled in the smooth MOS after
Electrical equipment M1 and photoelectricity pump M2, PhotoMOS relay M1 and photoelectricity the pump M2, which are combined, to be formed current limliting drive signal and isolates with forceful electric power, is had
There is the topological structure of minimum quiescent dissipation；Control signal voltage V1 is connected to that PhotoMOS relay M1 driving sides are high-end, and driving side is low
End ground connection；The driving side that load power source voltage V2 is connected to load power source V2 photoelectricity pumps M2 via constant-current source is high-end, and driving side is low
The controlled side that end is connected to PhotoMOS relay M1 is high-end, and controlled side low side is connected to a ten thousandth load current sampling resistor r's
Low side；Load power source voltage V2 is connected to that power electronic switching K2 is high-end, and power electronic switching K2 low side is connected to electric current inspection
That surveys is high-end, and power electronic switching K2 control end is connected to the high-end of electronic switch K1；The high-end of electronic switch K1 electrically connects
The high-end of the controlled sides of photoelectricity pump M2 is connected to, electronic switch K1 low side is electrically connected in the controlled side low sides of photoelectricity pump M2, work(
Rate electronic switch K2 and current detecting node；Electronic switch K1 control end is connected to the output end of control logic, and control is patrolled
The input collected is electrically connected at the outlet side of current detecting；The low side of current detecting is connected to the high-end of load RL, loads RL
Low side ground connection；The outlet side of current detecting is electrically connected at a ten thousandth load current sampling resistor r high-end, a ten thousandth
Load current sampling resistor r low side is connected to load RL low side.
As a kind of preferred scheme, current detecting constitutes 1/10000 proportional load electric current in real time altogether with operational amplifier
Ground detection part；Load current I-load produces pressure drop by R-sense at resistance R5, resistance R6 two ends, and resistance R6 electrically connects
No. 2 nodes are connected to, No. 2 nodes are connected to No. 4 nodes via resistance R7, and the R-sense other ends are connected to No. 1 section via resistance R5
Point, No. 1 node is connected to No. 3 nodes via resistance R8, provided with resistance R between No. 3 nodes and No. 4 nodes, No. 4 nodes warp
By detection circuit ground.
As a kind of preferred scheme, resistance R of the present invention resistance size is not zero.
A kind of operation principle of flash intelligent solid-state relay：When control signal voltage V1 signals are low, whole system
Shut-off, when control signal voltage V1 input high levels (more than 1.2V), it is only necessary to which 3-5mA input currents can (＜ 2mS) opening
Power electronic switching K2, driving load RL；Now electronic switch K1 disconnect, power electronic switching K2 by photoelectricity pump M2 pump voltage
Driving is opened；Power electronic switching K2's is driven through the controlled logic control of detecting element, and detecting element detects system and gone out
Existing anomaly, control logic is triggering electronic switch K1, switch-off power electronic switch K2.
Embodiment 1
The present invention drives the circuit of LED light MOS relays M1 and constant-current driving LED photoelectricity pump M2 combinations using a kind of current limliting
Pressure build-up technique coordinates electronic switch K1 control triggers circuits, and N ditch power MOSFET height can be just realized without charge pump circuit
Side is driven (shown in Fig. 1), when V1 signals are low, whole system shut-off, when V1 input high levels (more than 1.2V), it is only necessary to 3-
5mA input currents just (＜ 2mS) can open K2 rapidly, drive dynamic load RL, now K1 disconnects, K2 by M2 photoelectricity pump M2
Pump voltage driving is opened.K2's is driven through the controlled logic control of detecting element, once detecting element detects system appearance
Overvoltage, excessively stream (short circuit), excess temperature, the phenomenon such as under-voltage, control logic just triggering K1 shut-offs K2 immediately, so as to realize the guarantor to system
Shield.
With load current, (intelligence) detects function (output a ten thousandth load current) to the present invention altogether in real time simultaneously；Figure
In 2, R_sense is sampling resistor, if resistance R=0, R7 be connected to node 2 and " " between, R5, R6, R7, R8 and amplifier group
Into typical subtraction circuit.
R5, R8 and R6, R7 partial pressure are by positioned at load current detection signal [(I-load) × (R- of flash level
Sense in the incoming level common mode range for)] being down to suitable general amplifier.R8 negative-feedback makes the level of node 1 with Sui nodes 2,
Subtracter output difference voltage put on node 3,4 and " " between the ends of detection sampling resistor r bis-, this subtracter output characteristics
Range voltage source.
Concatenated between interior joint 3 of the present invention and node 4 into resistance R ≠ 0, and R7 reconfigurations are between node 2 and node 4；Then
The ends of resistance R bis- that subtracter output difference voltage is put between node 3 and node 4.I.e. detection sampling is flowed through in subtracter output
Resistance r electric current is (difference voltage/R), and this subtracter output characteristics ranges current source.
For ease of deducing and obtaining concise quantitative relationship, R5=R6=R7=R8, R7 are taken>>R、R8>>R can then be obtained：Subtraction
The detection sampling resistor r electric current i.e. ≈ of (I-load)/10000 (I-load) × (R-sense)/R is flowed through in device output.Circuit design
When, (R-sense)/R=1/10000 is taken, then subtracter output a ten thousandth load current, when the electric current for flowing through load resistance RL
During I_RL=10A, if taking r=1K Ω (0.1%), the voltage at the ends of detection sampling resistor r bis- is 1V, you can realized to load
The common ground monitoring in real time of electric current 1/10000.
If taking (R-sense)/R=1/2000, subtracter exports two one thousandth load currents；Other export class successively
Push away,
Although an embodiment of the present invention has been shown and described, it will be understood by those skilled in the art that：Not
In the case of departing from the principle and objective of the present invention a variety of change, modification, replacement and modification can be carried out to these embodiments, this
The scope of invention is limited by claim and its equivalent.
Claims (4)
1. a kind of flash intelligent solid-state relay, it is characterised in that include band current limliting and drive LED light MOS relays M1 and perseverance
Stream driving LED light electric pump M2, load power source voltage V2 are electrically concatenated via constant-current source is controlled in the PhotoMOS relay M1 and light
Electric pump M2, PhotoMOS relay M1 and photoelectricity the pump M2, which are combined, to be formed current limliting drive signal and isolates with forceful electric power with minimum static state
The topological structure of power consumption；
It is high-end that control signal voltage V1 is connected to PhotoMOS relay M1 driving sides, driving side low side ground connection；
The driving side that load power source voltage V2 is connected to photoelectricity pump M2 via constant-current source is high-end, and driving side low side is connected to light MOS
Relay M1 controlled side is high-end, and controlled side low side and a ten thousandth load current detection sampling resistor r, load resistance RL are total to
With connecing power supply together with low side.
Load power source voltage V2 is connected to that power electronic switching K2 is high-end, and power electronic switching K2 low side is connected to current detecting
It is high-end, power electronic switching K2 control end is connected to the high-end of electronic switch K1；Electronic switch K1 high-end electric connection
In the high-end of the controlled sides of photoelectricity pump M2, electronic switch K1 low side is electrically connected in the controlled side low sides of photoelectricity pump M2, power
Electronic switch K2 and current detecting node；Electronic switch K1 control end is connected to the output end of control logic, control logic
Input be electrically connected at the outlet side of current detecting；The low side of current detecting is connected to the high-end of load RL, load RL's
Low termination power；The outlet side of current detecting is electrically connected at the high-end of a ten thousandth load current detection sampling resistor r, ten thousand
/ mono- load current detection sampling resistor r low side is with being commonly connected to load RL low side power supply.
2. a kind of flash intelligent solid-state relay according to claim 1, it is characterised in that current detecting, load power source
Voltage V2 constitutes 1/10000 proportional load electric current detection part altogether in real time；Load current I-load passes through sample resistance R-
Sense produces pressure drop at resistance R5, resistance R6 two ends, and resistance R6 is electrically connected at No. 2 nodes, and No. 2 nodes connect via resistance R7
No. 4 nodes are connected to, load end is connected to No. 1 node via resistance R5, and No. 1 node is connected to No. 3 nodes, No. 3 via resistance R8
Resistance R is provided between node and No. 4 nodes, No. 4 nodes are via detection circuit ground.
3. a kind of flash intelligent solid-state relay according to claim 2, it is characterised in that the resistance of the resistance R is big
It is small to be not zero.
4. a kind of flash intelligent solid-state relay according to claim 1, it is characterised in that when control signal voltage V1 letters
Number for it is low when, whole system shut-off, when control signal voltage V1 input high levels (more than 1.2V), it is only necessary to 3-5mA input electricity
Stream can (＜ 2mS) opening power electronic switching K2, driving load RL；Now electronic switch K1 disconnects, power electronic switching K2
Driven and opened by photoelectricity pump M2 voltages；Power electronic switching K2's is driven through the controlled logic control of detecting element, detection member
Part detects system and anomaly occurs, and control logic is triggering electronic switch K1, switch-off power electronic switch K2.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710170545.0A CN106982053A (en) | 2017-03-21 | 2017-03-21 | A kind of flash intelligent solid-state relay |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710170545.0A CN106982053A (en) | 2017-03-21 | 2017-03-21 | A kind of flash intelligent solid-state relay |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106982053A true CN106982053A (en) | 2017-07-25 |
Family
ID=59339042
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710170545.0A Pending CN106982053A (en) | 2017-03-21 | 2017-03-21 | A kind of flash intelligent solid-state relay |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7304828B1 (en) * | 2004-09-22 | 2007-12-04 | Shvartsman Vladimir A | Intelligent solid state relay/breaker |
| US20130234779A1 (en) * | 2012-03-06 | 2013-09-12 | Mcq Inc. | Solid state relay circuit |
| CN103647540A (en) * | 2013-12-26 | 2014-03-19 | 周芸 | Solid-state wide-voltage isolation type direct-current relay |
| CN205105185U (en) * | 2015-09-23 | 2016-03-23 | 江苏矽莱克电子科技有限公司 | Cross internal circuit that zero output type exchanged solid state relay |
| CN206807416U (en) * | 2017-03-21 | 2017-12-26 | 上海佛泽实业有限公司 | A kind of flash intelligent solid-state relay |
-
2017
- 2017-03-21 CN CN201710170545.0A patent/CN106982053A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7304828B1 (en) * | 2004-09-22 | 2007-12-04 | Shvartsman Vladimir A | Intelligent solid state relay/breaker |
| US20130234779A1 (en) * | 2012-03-06 | 2013-09-12 | Mcq Inc. | Solid state relay circuit |
| CN103647540A (en) * | 2013-12-26 | 2014-03-19 | 周芸 | Solid-state wide-voltage isolation type direct-current relay |
| CN205105185U (en) * | 2015-09-23 | 2016-03-23 | 江苏矽莱克电子科技有限公司 | Cross internal circuit that zero output type exchanged solid state relay |
| CN206807416U (en) * | 2017-03-21 | 2017-12-26 | 上海佛泽实业有限公司 | A kind of flash intelligent solid-state relay |
Non-Patent Citations (1)
| Title |
|---|
| 臧雪岩: "新型直流固态继电器", 辽宁省交通高等专科学校学报, no. 01, pages 53 - 54 * |
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Application publication date: 20170725 |
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