CN106981560A - A kind of vulcanization molybdenum film of Er ions and preparation method thereof - Google Patents
A kind of vulcanization molybdenum film of Er ions and preparation method thereof Download PDFInfo
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- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 title claims abstract description 30
- 229910052750 molybdenum Inorganic materials 0.000 title claims abstract description 30
- 239000011733 molybdenum Substances 0.000 title claims abstract description 30
- 150000002500 ions Chemical class 0.000 title claims abstract description 26
- 238000004073 vulcanization Methods 0.000 title claims abstract description 24
- 238000002360 preparation method Methods 0.000 title claims abstract description 12
- 229910052961 molybdenite Inorganic materials 0.000 claims abstract description 34
- 229910052982 molybdenum disulfide Inorganic materials 0.000 claims abstract description 34
- CWQXQMHSOZUFJS-UHFFFAOYSA-N molybdenum disulfide Chemical compound S=[Mo]=S CWQXQMHSOZUFJS-UHFFFAOYSA-N 0.000 claims abstract description 28
- 229910052761 rare earth metal Inorganic materials 0.000 claims abstract description 14
- 238000000034 method Methods 0.000 claims abstract description 9
- 239000000758 substrate Substances 0.000 claims abstract description 7
- 238000000151 deposition Methods 0.000 claims abstract description 5
- 230000008569 process Effects 0.000 claims abstract description 5
- 239000002019 doping agent Substances 0.000 claims abstract description 3
- 239000007792 gaseous phase Substances 0.000 claims abstract description 3
- 239000000126 substance Substances 0.000 claims abstract description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 21
- 239000010453 quartz Substances 0.000 claims description 15
- 239000003708 ampul Substances 0.000 claims description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 6
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 6
- 238000000137 annealing Methods 0.000 claims description 6
- 239000007789 gas Substances 0.000 claims description 6
- 230000006911 nucleation Effects 0.000 claims description 5
- 238000010899 nucleation Methods 0.000 claims description 5
- 239000002253 acid Substances 0.000 claims description 3
- 229910052786 argon Inorganic materials 0.000 claims description 3
- 239000012159 carrier gas Substances 0.000 claims description 3
- 239000008367 deionised water Substances 0.000 claims description 3
- 229910021641 deionized water Inorganic materials 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 239000005416 organic matter Substances 0.000 claims description 3
- 150000002910 rare earth metals Chemical class 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 239000002904 solvent Substances 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 238000012545 processing Methods 0.000 claims description 2
- 238000010792 warming Methods 0.000 claims description 2
- 239000010408 film Substances 0.000 abstract description 49
- 238000004020 luminiscence type Methods 0.000 abstract description 6
- 239000010409 thin film Substances 0.000 abstract description 6
- 230000004913 activation Effects 0.000 abstract description 5
- 238000010200 validation analysis Methods 0.000 abstract description 3
- 238000005395 radioluminescence Methods 0.000 abstract description 2
- 238000004140 cleaning Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 13
- 239000000463 material Substances 0.000 description 7
- -1 Rare earth ion Chemical class 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000005855 radiation Effects 0.000 description 4
- 238000012876 topography Methods 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 229910052691 Erbium Inorganic materials 0.000 description 3
- 238000002441 X-ray diffraction Methods 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical group [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 description 3
- 239000002096 quantum dot Substances 0.000 description 3
- 238000000862 absorption spectrum Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000002189 fluorescence spectrum Methods 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000005693 optoelectronics Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 235000018185 Betula X alpestris Nutrition 0.000 description 1
- 235000018212 Betula X uliginosa Nutrition 0.000 description 1
- 238000005411 Van der Waals force Methods 0.000 description 1
- 239000011358 absorbing material Substances 0.000 description 1
- 239000012190 activator Substances 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000004630 atomic force microscopy Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 229910021389 graphene Inorganic materials 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000000314 lubricant Substances 0.000 description 1
- 239000002932 luster Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0321—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 characterised by the doping material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses vulcanization molybdenum film of a kind of Er ions and preparation method thereof.After cleaningnOn Si (111) piece substrate, using chemical gaseous phase depositing process, with Er (NO3)3As Er dopants to MoS2It is doped, in mass ratio, MoS2：Er(NO3)3For 5:1~1:1, obtain a kind of vulcanization molybdenum film of Er ions.Rare earth element has a good characteristics of luminescence, the vulcanization molybdenum film for the Er ions that the present invention is provided, using rare earth element er as Validation Counter, doped multi-layer vulcanization molybdenum film, in MoS2Play a part of the centre of luminescence, luminous, the raising MoS of activation vulcanization molybdenum film as active element in film2The light absorbs of film and the probability of radioluminescence, effectively increase molybdenum sulfide thin-film light emitting intensity.
Description
Technical field
The present invention relates to a kind of method for providing molybdenum sulfide thin-film light emitting characteristic, more particularly to a kind of molybdenum sulfide of Er ions
Film and preparation method thereof.
Background technology
MoS2, also known as brightness molybdenum is the black solid material of metal luster under normal temperature, with excellent chemically stable
Property, heat endurance (1185 DEG C of fusing point) and lubricity, be generally used for machinery, the face coat or lubricant of cutting element.Block
MoS2For indirect band gap (1.2eV) semiconductor, in structure, MoS2In the graphite laminate structure of hexagonal closs packing, layer is with interlayer by weak
The van der waals force of interaction is combined.It is easily peeled off to graphite similar for the graphene of monoatomic layer, passes through micromechanics
Peel off brightness molybdenum and also easily become individual layer MoS2Film（Referring to document：S. Bertolazzi, J. Brivio, A. Kis,
Stretching and Breaking of Ultrathin MoS2, ACS Nano, V. 5(12): 9703-9709,
2011.）.Individual layer MoS2The regular hexagon planar structure closed is bonded for the atom covalences of S-Mo-S tri-, thickness is only 0.65nm.Individual layer
MoS2Not only there is the network structure similar to grapheme material, also with 1.8 larger eV direct band gaps and close photoelectricity
Magnetic characteristic.Individual layer MoS2Available for opto-electronic devices such as manufacture field-effect transistor, light-detecting devices.However, individual layer MoS2Typically
Mechanical stripping method is needed accurately to obtain, the molybdenum sulfide two-dimensional material of Artificial Growth contains several and tens atoms mostly
Layer, it was discovered by researchers that with the increase of the molybdenum sulfide number of plies, its electronic band gap is intended to body material, becomes indirect band gap and partly leads again
Body.Because the electron transition probability of indirect bandgap material is low, cause radiation recombination luminous efficiency low, limit it in light
Extensive use in terms of and opto-electronic device.Vulcanizing molybdenum film needs in solar cell, photo-detector and luminescent device
If playing a role, in addition it is also necessary to effectively improve its luminescent properties.
The content of the invention
The present invention is directed to the characteristics of polyatom layer molybdenum sulfide thin-film light emitting performance is weak can effectively improve molybdenum sulfide there is provided one kind
Vulcanization molybdenum film of the Er ions of thin-film light emitting intensity and preparation method thereof.
Realize that the object of the invention technical scheme is to provide a kind of preparation method of the vulcanization molybdenum film of Er ions, using chemistry
CVD method, with Er (NO3)3As Er dopants to MoS2It is doped；Comprise the following steps：
（1）Substrate is cleaned：Withn- Si (111) piece is substrate, and the silica on Si surfaces is removed with dilute HF acid soaks, then successively
Cleaned with acetone, ethanol, deionized water ultrasonic wave, remove the organic matter on silicon chip, dried up with nitrogen, be put into quartz ampoule and sunk
Product processing；The vacuum of quartz ampoule is 10-2Pa, is heated to 300 DEG C, removes the steam of silicon chip surface；
（2）The MoS of rare earth Er ions2Film preparation：Quartz ampoule is heated to 500~600 DEG C, using argon gas as carrier gas,
In the MoS using dilute sulfuric acid as solvent2Er (NO are added in solution3)3Solution, in mass ratio, MoS2 ：Er(NO3)3For 5:1~1:
1, gas carries MoS2With Er (NO3)3Exist into quartz ampoulen- Si (111) piece is adsorbed, 5~10 points of nucleation and growth process
Clock, then quartz ampoule is warming up to 700~950 DEG C made annealing treatment, annealing time is 10~40 minutes, obtains Er ions
MoS2Film.
Technical solution of the present invention also includes the vulcanization molybdenum film for being prepared as described above a kind of Er ions that method is obtained.
The principle of the present invention：Because rare earth element has the 4f electronic shell of underfill, 4f electronics exists under ultraviolet light irradiation
Transition within f-f configurations or between f-d configurations, can arbitrarily arrange between 7 4f tracks, thus generate various energy levels and
Spectral cterm, can absorb or launch from ultraviolet region, it is seen that the electromagenetic wave radiation of the various wavelength in light area to infrared light district.For
The general bad material of luminescent properties adds some rare earth element ions, and material will be activated luminous, and its luminescent properties will be notable
Improve.Rare earth ion primarily serves the effect of luminescent activator wherein.Rare earth element er can launch blue and green light and red
Light, the feux rouges launched at 663 nm is consistent with molybdenum sulfide emission band, can effectively play activation central role.This is specially
Profit is from rare earth element er as Validation Counter, and adulterate MoS2Film, improves the luminescent properties of Liu's birch.Erbium atom is used as activation
Atom, on the one hand can effectively absorb light energy, and transfer energy to molybdenum sulfide, promote it to absorb light energy.On the other hand, it is golden
Free electron absorbs visible ray formation surface plasma resonance in category, can greatly change MoS2The characteristics of luminescence so that
Improve the luminescent properties of vulcanization molybdenum film.
Rare earth element has the good characteristics of luminescence, compared with prior art, the beneficial effects of the present invention are：The present invention
The vulcanization molybdenum film of the Er ions of offer, using rare earth element er as Validation Counter, doped multi-layer vulcanization molybdenum film, in MoS2It is thin
Play a part of the centre of luminescence, luminous, the raising MoS of activation vulcanization molybdenum film as active element in film2The light absorbs of film
With the probability of radioluminescence, molybdenum sulfide thin-film light emitting intensity is effectively increased.
Brief description of the drawings
Fig. 1 be undoped with molybdenum sulfide atomic force microscopy surface shape appearance figure；
Fig. 2 is a kind of surface topography map of the vulcanization molybdenum film of Er ions provided in an embodiment of the present invention；
Fig. 3 is the X-ray diffraction comparison diagram of the vulcanization molybdenum film provided in an embodiment of the present invention undoped with Er ions；
Fig. 4 is the light absorbs comparison diagram of the vulcanization molybdenum film provided in an embodiment of the present invention undoped with Er ions；
Fig. 5 is the fluorescence spectrum comparison diagram of the vulcanization molybdenum film provided in an embodiment of the present invention undoped with Er ions.
Embodiment
Technical solution of the present invention is further elaborated with reference to the accompanying drawings and examples.
Embodiment 1
The present embodiment grows ultra-thin MoS using chemical gaseous phase depositing process on n-type silicon chip (111)2Film (several atoms
Layer), and be doped in its growth course using Er atoms.
The chemical vapor deposition that the present embodiment is used（CVD）Method prepares MoS2The device of film is made up of four parts：Stone
Reactive deposition room, vacuum-pumping system, gas mass flow gauge and temperature control system that English pipe is constituted.Backing material is using electricity
Resistance rate is 3~5 Ω cm, crystal orientation（111）'snType silicon（Si）Piece, size is 12 × 12 mm2×500 μm。
Preparation method comprises the following steps：
1st, substrate is cleaned：Remove the silica on Si surfaces with dilute HF acid soaks 15 minutes first, then successively with acetone, ethanol,
Deionized water ultrasonic wave is cleaned, and is removed the organic matter on silicon chip, is finally dried up with nitrogen, be then placed in quartz ampoule.Before deposition,
Quartz ampoule vacuum is evacuated to 10-2Pa, is heated to 300 DEG C and maintains 10 minutes, to remove the steam of silicon chip surface.
2nd, Er ions MoS2Film preparation：Quartz ampoule is heated to 500 DEG C（The scope of application is 500~600 DEG C）, use Ar
Gas is passed through the pure MoS of analysis as carrier gas2Solution（Dilute sulfuric acid is solvent）, and to analyze pure Er (NO3)3Adulterated as Er
Agent is to MoS2It is doped.In order in MoS2Film is doped while growth, in MoS2Solution is with 5:1 mass ratio
（MoS2 ：Er(NO3)3May range from 5:1~1:1）Add Er (NO3)3Solution.Argon gas carries MoS2With Er (NO3)3Into
Quartz ampoule existsn- Si (111) piece is adsorbed, nucleation and growth 10 minutes（The scope of application is 5~10 minutes）, then by quartz
Pipe is raised to 950 DEG C（The scope of application is 700~950 DEG C）Made annealing treatment, annealing time 30 minutes（The scope of application be 20~
40 minutes）.
The vulcanization molybdenum film that the Er prepared is adulterated carries out surface topography, structural and optical characteristic measurement, utilizes original
Sub- force microscope analysed film surface topography.Membrane structure application x-ray analysis, and use ultraviolet-visible light（ UV-vis）Point
Light photometer (Shimadzu UV-3600) analyzes the absorption spectra of sample, finally measures the luminescent spectrum of Er ions molybdenum sulfide.
It it is one referring to accompanying drawing 1n-The MoS undoped with erbium atom prepared on Si pieces2The AFM of film
Photo.As can be seen that many MoS2Quantum dot is distributed in substrate surface.MoS2The nm of the average thickness of film about 25, quantum dot
The maximum height of projection is 50 nm.
Fig. 2 is the MoS of Er ions prepared by same time2The surface topography map of film.As can be seen that when identical grows
Between, after Er ions, the nucleation density of molybdenum sulfide quantum dot is dramatically increased；The average thickness ratio for vulcanizing molybdenum film increases undoped with sample
Double, highest thickness reaches that 100 nm. rare earth element ers have catalytic action, can accelerate to vulcanize nucleation and the life of molybdenum film
It is long.
Fig. 3 is to be prepared undoped with contrasting spectrogram with the X-ray diffraction of Er ions molybdenum sulfide sample.As can be seen from Figure,
There are 4 stronger diffraction maximums at 14.7 °, 47.8 °, 54.6 °, and 56.4 ° of 2 θ angles undoped with sample, with MoS2It is brilliant
The XRD standard cards contrast of body, corresponds to (002) of molybdenum sulfide, (105), (106) and (110) crystal face respectively.For doping
Sample, two diffraction maximums are added at 29.5 ° of and, 44.8 ° of angles, and MoS is corresponded to respectively2(104) (110) crystal face.Say
Bright Er ions can increase the crystallinity of MoS2 films.
Fig. 4 is the prepared MoS undoped with Er ions sample2 The visible absorption contrast spectrogram of film.Utilize
The prepared MoS of UV-3600 spectrophotometer measurements2The absorption spectra of film sample.As can be seen that after Er ions, molybdenum sulfide
The absorptivity of film is significantly increased.Molybdenum sulfide has very strong absorption to the visible ray of 300~700 nm wave bands, and this shows molybdenum sulfide
It can be used as good light absorbing material.During more than 732 nm, absorption intensity reduces rapidly.Then 732nm is the suction of vulcanization molybdenum film
Limit is received, according to the relation between semi-conducting material band gap width and wavelength：Eg=1.24/ λ (eV) can obtain prepared molybdenum sulfide
The band gap width of film is 1.69 eV.Because the band gap width of molybdenum sulfide reduces with the increase of the number of plies, therefore the band gap width
Less than the width of individual layer molybdenum sulfide direct band gap（1.8 eV）, the band gap width with typical multilayer film is corresponding.
Fig. 5 is to be prepared undoped with the MoS with doped samples2The visible fluorescence spectrum comparison diagram of film.At room temperature
In the case where 360 nm light are excited, undoped with MoS2Sample has a luminescence generated by light peak, the MoS with several atomic layers at 693 nm2's
Own radiation lights.There are 2 very strong glow peaks for the molybdenum sulfide sample of Er ions, except the intrinsic glow peak at 693nm
Outside, a blue glow peak is added at 394 nm.Obvious intrinsic luminous peak intensity of the er-doped sample at 693nm
One times is added than the luminous intensity undoped with sample.Because the effect at the active center of erbium ion, can be played sharp
The effect at center living, activation vulcanizes the luminous of molybdenum film.Blue-light-emitting peak at 394 nm mostlys come from the hair of erbium ion
Light, is from its 2H11/2Energy level is to 4I1/5The result of energy level radiation transistion.
The vulcanization molybdenum film for the Er ions that the present embodiment is provided, by rare earth doped element erbium, vulcanization molybdenum film is in 693nm
The intrinsic luminous intensity at place enhances one times, it was demonstrated that rare earth element er has the effect of lifting molybdenum sulfide thin-film light emitting performance.
Claims (2)
1. the preparation method of the vulcanization molybdenum film of a kind of Er ions, it is characterised in that chemical gaseous phase depositing process is used, with Er
(NO3)3As Er dopants to MoS2It is doped；Comprise the following steps：
（1）Substrate is cleaned：Withn- Si (111) piece is substrate, and the silica on Si surfaces is removed with dilute HF acid soaks, then successively
Cleaned with acetone, ethanol, deionized water ultrasonic wave, remove the organic matter on silicon chip, dried up with nitrogen, be put into quartz ampoule and sunk
Product processing；The vacuum of quartz ampoule is 10-2Pa, is heated to 300 DEG C, removes the steam of silicon chip surface；
（2）The MoS of rare earth Er ions2Film preparation：Quartz ampoule is heated to 500~600 DEG C, using argon gas as carrier gas,
Using dilute sulfuric acid as the MoS of solvent2Er (NO are added in solution3)3Solution, in mass ratio, MoS2 ：Er(NO3)3For 5:1~1:1,
Gas carries MoS2With Er (NO3)3Exist into quartz ampoulen- Si (111) piece is adsorbed, nucleation and growth process 5~10 minutes,
Quartz ampoule is warming up into 700~950 DEG C again to be made annealing treatment, annealing time is 10~40 minutes, obtains the MoS of Er ions2
Film.
2. a kind of vulcanization molybdenum film of the Er ions obtained by claim 1 preparation method.
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| CN112292763A (en) * | 2018-06-26 | 2021-01-29 | 三菱电机株式会社 | Electromagnetic wave detector and electromagnetic wave detector array |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103579419A (en) * | 2013-11-13 | 2014-02-12 | 苏州科技学院 | Grapheme/MoS2/Si heterojunction thin-film solar cell and manufacturing method thereof |
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| CN112292763B (en) * | 2018-06-26 | 2024-04-05 | 三菱电机株式会社 | Electromagnetic wave detector and electromagnetic wave detector array |
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