CN106971992A - A kind of half-bridge power semiconductor module - Google Patents
A kind of half-bridge power semiconductor module Download PDFInfo
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- CN106971992A CN106971992A CN201710321481.XA CN201710321481A CN106971992A CN 106971992 A CN106971992 A CN 106971992A CN 201710321481 A CN201710321481 A CN 201710321481A CN 106971992 A CN106971992 A CN 106971992A
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- busbar
- confluxing
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- layer
- bus bar
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L24/80 - H01L24/90
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0003—Details of control, feedback or regulation circuits
Abstract
The invention discloses a kind of half-bridge power semiconductor module, including：Positioned at the semiconductor chip group of bottom；Positioned at the low sense composite bus bar of top layer, the both sides of low sense composite bus bar, which are each extended over, is provided with exchange interface and positive and negative layer interface, and low sense composite bus bar includes the negative layer busbar of lamination setting, positive layer busbar and exchanges layer busbar；Positioned at intermediate layer some busbar groups of confluxing parallel with one another, wherein, the corresponding semiconductor chip in the bottom and semiconductor chip group of busbar group of respectively confluxing is connected, the corresponding busbar connection of conflux at the top of busbar group of respectively confluxing end and low sense composite bus bar.Semiconductor chip group is the function of tonic chord part of power model, it is low sense composite bus bar exchange interface and positive and negative layer interface as power model main circuit external interface, busbar group of confluxing realizes that low sense composite bus bar and semiconductor chip group are conductively connected, the current sharing confluxed between busbar group and each chip of semiconductor chip group has been taken into account, the low perception and current sharing of power model is improved.
Description
Technical field
The present invention relates to electric and electronic technical field, more particularly to a kind of half-bridge power semiconductor module.
Background technology
With the development of science and technology, Power Electronic Technique achieves many achievements.Wherein, power model is electric power electricity
The component commonly used in son.
Power model is the core component of current transformer, is widely used in the field such as track traffic and industrial frequency conversion.At present, it is interior
Portion is concentrated mainly on low pressure middle low power section for the power model of half-bridge circuit, is mainly adopted for high-power semiconductor module
The scheme being laid out with single tube.Current power model especially also has many shortcomings, main table in high-power application aspect
It is now as follows：Because it uses mono-tube design, power density is not high；The connection of inside chip to external power terminal is mainly still adopted
With traditional copper bar, make its low perception poor；Multi-chip current sharing is poor or the inductance of low-inductance bus is arranged using module-external
Mode is flowed, current sharing is difficult to control to.
Therefore, the low perception and current sharing of power model how are improved, is that those skilled in the art need solution at present
Technical problem.
The content of the invention
It is an object of the invention to provide a kind of half-bridge power semiconductor module, the low perceptual and equal of power model can be improved
Fluidity.
In order to solve the above technical problems, the invention provides following technical scheme：
A kind of half-bridge power semiconductor module, including：
Positioned at the semiconductor chip group of bottom；
Positioned at the low sense composite bus bar of top layer, it is described it is low sense composite bus bar both sides each extend over be provided with exchange interface and
Positive and negative layer interface, the low sense composite bus bar includes the negative layer busbar of lamination setting, positive layer busbar and exchanges layer busbar；
Positioned at intermediate layer some busbar groups of confluxing parallel with one another, wherein, the bottom of each busbar group of confluxing and described
Conflux at the top of corresponding semiconductor chip connection in semiconductor chip group, each busbar group of confluxing and hold compound with the low sense
The corresponding busbar connection of busbar.
Preferably, each busbar group of confluxing includes：
Just conflux busbar, die in the correspondence in the bottom pin and the semiconductor chip group of the busbar that just confluxing
Colelctor electrode connection, conflux at the top of the busbar that just confluxing end and positive layer busbar connection；
Die under correspondence in the negative busbar that confluxes, the bottom pin and the semiconductor chip group of the negative busbar that confluxes
Emitter stage connection, conflux at the top of the negative busbar that confluxes end and negative layer busbar connection；
Exchange is confluxed busbar, the exchange conflux busbar bottom pin and the semiconductor chip group in correspondence on manage
The public pole connection of chip and lower die, the end of confluxing at the top of the busbar that confluxes that exchanges exchanges the connection of layer busbar with described.
Preferably, in each busbar group of confluxing the busbar that just confluxes, the negative busbar that confluxes mutually is put down with the busbar that confluxes is exchanged
OK, and between two adjacent busbars that conflux it is provided with insulation division.
Preferably, each pin of the bottom of the busbar group of confluxing is two layers of bending pin.
Preferably, the low sense composite bus bar is provided with the interface holes of preset number, the top of the busbar group of confluxing
End respectively conflux provided with raised with the end of confluxing of corresponding interface holes cooperation grafting.
Preferably, the predeterminated position between the two neighboring pin of the busbar that just confluxing is provided with a bearing of trend
It is raised away from end of confluxing described in each pin.
Preferably, the predeterminated position between the two neighboring pin of the negative busbar that confluxes is provided with a bearing of trend
It is raised away from end of confluxing described in each pin.
Preferably, the predeterminated position between the two neighboring pin for exchanging the busbar that confluxes is provided with an extension side
To away from end projection of confluxing described in each pin.
Preferably, the low sense composite bus bar is used in the negative layer busbar, positive layer busbar and exchange layer provided with some
The through hole of embedding insulating barrier between busbar.
Compared with prior art, above-mentioned technical proposal has advantages below：
A kind of half-bridge power semiconductor module that the embodiment of the present invention is provided, including：Positioned at the semiconductor chip of bottom
Group；Positioned at the low sense composite bus bar of top layer, the both sides of low sense composite bus bar each extend over be provided with exchange interface and positive negative layer connect
Mouthful, low sense composite bus bar includes the negative layer busbar of lamination setting, positive layer busbar and exchanges layer busbar；It is parallel with one another positioned at intermediate layer
Some busbar groups of confluxing, wherein, the connection of corresponding semiconductor chip in the bottom and semiconductor chip group of busbar group of respectively confluxing,
Conflux at the top of busbar group of respectively confluxing and hold and the low corresponding busbar connection for feeling composite bus bar.In the technical program, by power mould
Block has been divided into three layers, from bottom to top respectively semiconductor chip group, busbar group of confluxing and low sense composite bus bar, wherein, semiconductor
Chipset is the function of tonic chord part of power model, and the exchange interface of low sense composite bus bar and positive and negative layer interface are used as power model
Main circuit external interface, busbar group of confluxing realizes that low sense composite bus bar and semiconductor chip group are conductively connected, and constitutes whole
The current sharing confluxed between busbar group and each chip of semiconductor chip group has been taken into account in conductive input and output loop, the loop,
Stray inductance greatly reduces, and improves the low perception and current sharing of power model.
Brief description of the drawings
In order to illustrate more clearly about the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existing
There is the accompanying drawing used required in technology description to be briefly described, it should be apparent that, drawings in the following description are the present invention
Some embodiments, for those of ordinary skill in the art, on the premise of not paying creative work, can also basis
These accompanying drawings obtain other accompanying drawings.
The half-bridge power semiconductor module structural representation that Fig. 1 is provided by a kind of embodiment of the invention；
The low sense composite bus bar knot for the half-bridge power semiconductor module that Fig. 2 is provided by a kind of embodiment of the invention
Structure schematic diagram；
The main electricity that power is interconnected in the half-bridge power semiconductor module that Fig. 3 is provided by a kind of embodiment of the invention
Road schematic diagram；
The busbar group structure of confluxing for the half-bridge power semiconductor module that Fig. 4 is provided by a kind of embodiment of the invention
Schematic diagram.
Embodiment
The core of the present invention is to provide a kind of half-bridge power semiconductor module, can improve the low perceptual and equal of power model
Fluidity.
In order that the above objects, features and advantages of the present invention can become apparent it is understandable, below in conjunction with the accompanying drawings to this hair
Bright embodiment is described in detail.
Detail is elaborated in the following description to fully understand the present invention.But the present invention can with it is a variety of not
It is same as other manner described here to implement, those skilled in the art can do class in the case of without prejudice to intension of the present invention
Like popularization.Therefore the present invention is not limited by following public embodiment.
It refer to Fig. 1 and Fig. 2, the half-bridge power semiconductor module that Fig. 1 is provided by a kind of embodiment of the invention
Structural representation；The compound mother of the low sense for the half-bridge power semiconductor module that Fig. 2 is provided by a kind of embodiment of the invention
Arrange structural representation.
A kind of embodiment of the present invention provides a kind of half-bridge power semiconductor module, including：Positioned at bottom
Semiconductor chip group 1；Positioned at the low sense composite bus bar 2 of top layer, the both sides of low sense composite bus bar 2, which are each extended over, to be provided with exchange and connects
Outside the main circuit of mouth 2a and positive and negative layer interface 2b, exchange interface 2a and positive and negative layer interface 2b as half-bridge power semiconductor module
Interface, low sense composite bus bar 2 includes the negative layer busbar 21 of lamination setting, positive layer busbar 22 and exchanges layer busbar 23；Positioned at centre
Layer some busbar groups 3 of confluxing parallel with one another, wherein, corresponding half in the bottom and semiconductor chip group 1 of busbar group 3 of respectively confluxing
Conductor chip is connected, and the top for busbar group 3 of respectively confluxing, which is confluxed, holds and the low corresponding busbar connection for feeling composite bus bar 2.
In the present embodiment, as shown in figure 1, the half-bridge power semiconductor module is a kind of power model, in this implementation
In mode using it is low sense interconnection and stream design, from bottom and on be divided into three layers：Semiconductor chip group 1, busbar group 3 of confluxing and low
Feel composite bus bar 2.Wherein, semiconductor chip group 1 includes some semiconductor chips, and semiconductor chip group 1 is the work(of power model
Can part.Include die and a lower die on one in same semiconductor chip.
In the present embodiment, low sense composite bus bar is composite bus bar, also referred to as low-inductance bus.It is located at semiconductor chip
The upper area of group, as shown in Fig. 2 that includes three layers of conductive bus bar：Direct current positive layer busbar 22, direct current negative layer busbar 21 and friendship
Fluid layer busbar 23.In the present embodiment, three layers of conductive bus bar from outside to semiconductor chip direction on arrangement be respectively：Hand over
Fluid layer busbar 23, negative layer busbar 21 and positive layer busbar 22, three layers of conductive bus bar lamination arrangement, each other by insulating barrier 24 every
From, wherein, preferably it is low sense composite bus bar provided with it is some be used for negative layer busbar 21, positive layer busbar 22 with exchange layer busbar 23 it
Between embedding insulating barrier through hole, can by each through hole by insulating materials be potted in the space between three layers of conductive bus bar formed
Insulating barrier.
It should be noted that being the arrangement mode of preferably above-mentioned three layers of conductive bus bar, to three layers in the present embodiment
The up-down structure relation of conductive bus bar is not limited, and is specifically depended on the circumstances.
In the present embodiment, power model three layers have been divided into, from bottom to top respectively semiconductor chip group, mother of confluxing
Row's group and low sense composite bus bar, wherein, semiconductor chip group is the function of tonic chord part of power model, the exchange of low sense composite bus bar
Interface and positive and negative layer interface are as the main circuit external interface of power model, and busbar group of confluxing realizes low sense composite bus bar and partly lead
Body chipset is conductively connected, and constitutes whole conductive input and output loop, and the loop has been taken into account to conflux and busbar group and partly led
Current sharing between each chip of body chipset, stray inductance greatly reduces, and improves the low perception and current sharing of power model.
It refer to Fig. 3 and Fig. 4, the half-bridge power semiconductor module that Fig. 3 is provided by a kind of embodiment of the invention
The main circuit schematic diagram of middle power interconnection；The half-bridge power semiconductor module that Fig. 4 is provided by a kind of embodiment of the invention
The busbar group structural representation that confluxes of block.
Further, busbar group 3 of respectively confluxing includes：Just confluxing busbar 31, the bottom pin for the busbar 31 that just confluxing and half
The colelctor electrode connection of die in correspondence in conductor chip group 1, the top for the busbar 31 that just confluxing, which is confluxed, holds and positive layer busbar company
Connect；The emitter stage of die under correspondence in the negative busbar 32 that confluxes, the bottom pin and semiconductor chip group 1 of the negative busbar 32 that confluxes
Connection, the top of the negative busbar 32 that confluxes, which is confluxed, holds and the connection of negative layer busbar；The busbar 33 that confluxes is exchanged, the bottom for the busbar 33 that confluxes is exchanged
The public pole connection of die and lower die in the correspondence in pin and semiconductor chip group 1 is held, the busbar 33 that confluxes is exchanged
Top, which is confluxed, holds and exchanges the connection of layer busbar.
In the present embodiment, as shown in figure 3, in the half-bridge power semiconductor module that Fig. 3 is provided by present embodiment
The main circuit diagram of multi-chip power interconnection, wherein, C1 represents the colelctor electrode of upper die 101 in the module, and E2 represents lower tube core
The emitter stage of piece 102, E1/C2 represents the public pole of the upper die 101 and lower die 102 in same semiconductor chip.
Preferably, the busbar that just confluxes, the negative busbar that confluxes in busbar group of respectively confluxing are parallel to each other with the busbar that confluxes is exchanged, and
Insulation division is provided between two adjacent busbars that conflux.Each pin of the bottom for busbar group of confluxing is two layers of bending pin.Low sense
Composite bus bar is provided with the interface holes of preset number, and the end of respectively confluxing at the top for busbar group of confluxing is provided with and corresponding interface holes are matched somebody with somebody
The end of confluxing for closing grafting is raised.Predeterminated position between the two neighboring pin for the busbar that just confluxes is provided with a bearing of trend
End of confluxing away from each pin is raised.Predeterminated position between the two neighboring pin of the negative busbar that confluxes is provided with an extension
Direction is raised away from the end of confluxing of each pin.Predeterminated position between the two neighboring pin for the busbar that confluxes is exchanged is provided with one
Individual bearing of trend is raised away from the end of confluxing of each pin.
In the present embodiment, busbar group of confluxing has some groups, is respectively positioned on the lower section of low sense composite bus bar, and each group is confluxed mother
It is parallel relationship between row's group, to realize that the power circuit between low sense composite bus bar and semiconductor chip group is conductively connected work(
Energy.It is single conflux include inside busbar group just confluxing busbar, it is negative conflux busbar with exchange the busbar that confluxes, be respectively completed a chip in group
Be conductively connected and combining functions.It is parallel against arrangement, intermediate space filling with above-mentioned three kinds of busbars that conflux on group chip
Insulating materials insulation constitutes above-mentioned insulation division.
As shown in figure 4, the busbar 31 that just confluxing, bottom pin 31a is used for the colelctor electrode C1 for being connected to die on each, top
Portion, which confluxes, holds 31b (end of confluxing is raised) to be connected with the positive layer busbar 22 inside the interface holes of low sense composite bus bar 2；Just conflux mother
The bottom pin 31a of row 31, is designed to two layers of bending form, is conducive to the discharge of busbar internal stress；Bottom pin 31a number
Amount, it is identical with the quantity of semiconductor chip in group, it is 3 in the present embodiment, but the present embodiment is not limited to, can also basis
Actual conditions are other quantities, and top is confluxed the form that end 31b is upward straight cutting, the dead band in the middle of the pin 31a of each two bottom
Conflux end 31b at design one top.Because the position of chip layout is different, the chip close to central area, its internal temperature phase
To higher, the electric current that the chip internal passes through is corresponding smaller, and the electric current that corresponding bottom pin 31a passes through is smaller, and top is confluxed
Hold 31b position corresponding away from above-mentioned bottom pin 31a, Position Design neutral point deviation temperature between two bottom pin 31a
Low chip-side.And the conflux position at end of top is arranged according to corresponding position of semiconductor chip, reasonable in design is equal
Flow position.
Correspondingly, the busbar 32 that confluxes is born, bottom pin 32a is connected to the emitter E 2 of each lower die, and top is confluxed
End 32b is connected with the negative layer busbar 21 inside the interface holes of low sense composite bus bar 2；The bottom pin 32a of the negative busbar 32 that confluxes, if
Two layers of bending form is counted into, is conducive to the discharge of busbar internal stress；Semiconductor core in bottom pin 32a quantity, with same group
The quantity of piece is identical, is 3 in the present embodiment, but be not limited to the present embodiment or other quantity.Top is confluxed end
32b is the form of upward straight cutting, and the dead band in the middle of the pin 32a of each two bottom designs a top and confluxed end 32b；Due to chip
The position of layout is different, and the chip close to central area, its internal temperature is of a relatively high, and the electric current that the chip internal passes through is corresponding
Smaller, the electric current that corresponding bottom pin 32a passes through is smaller, and top, which is confluxed, holds 32b position corresponding away from above-mentioned bottom pin
32a, Position Design low chip-side of neutral point deviation temperature between two bottom pin 32a.And top is confluxed the position at end
Arranged according to corresponding position of semiconductor chip, stream position reasonable in design.
Accordingly, the busbar 33 that confluxes is exchanged, bottom pin 33a is connected to the public pole of die above and below each of semiconductor
E1/C2, top, which is confluxed, holds 33b to be connected with the exchange layer busbar 23 inside the interface holes of low sense composite bus bar 2；Exchange the busbar that confluxes
33 bottom pin 33a, is designed to two layers of bending form, is conducive to the discharge of busbar internal stress.Bottom pin 33a number
Amount, with group in semiconductor chip quantity it is identical, in the present embodiment be 3, but be not limited to the present embodiment or its
His quantity；Top is confluxed the form that end 33b is upward straight cutting, and the dead band in the middle of the pin 33a of each two bottom designs a top
Conflux end 33b；Because the position of chip layout is different, the chip close to central area, its internal temperature is of a relatively high, the chip
The electric current that inside passes through is corresponding smaller, and the electric current that corresponding bottom pin 33a passes through is smaller, and top, which is confluxed, holds 33b position phase
Should be away from above-mentioned bottom pin 33a, Position Design low chip-side of neutral point deviation temperature between two bottom pin 5a.And
The conflux position at end of top is arranged according to corresponding position of semiconductor chip, stream position reasonable in design.
Wherein, the low sense composite bus bar of top layer is positive and negative and ac conduction copper coin is constituted by 3 layers be substantially parallel, between layer
Spacing is very small, and the electromagnetism field energy that electric current flowing is produced in every layer is cancelled out each other, so as to reduce the stray inductance in circuit；Together
3 kinds of busbars that conflux in reason, busbar group of confluxing are also parallel and are close to arrangement, can reduce the stray inductance of circuit.
By the way that to 31b at the top of the busbar that confluxes, 32b, the adjustment of 33b raised positions can make bus-bar bottom legs different
The electric current of size can flow through the circuit paths of different length, and high current path is short, low current path length, so that adjustment confluxes
The current density and caloric value of busbar, reach and flow effect；31b simultaneously, 32b, the multiple quantity of 33b convex designs, rather than
Single confluxes upwards, disperses and improves the ability by electric current, also embodies current sharing.
It should be noted that can be welded, riveted by pin between low sense composite bus bar and busbar group of respectively confluxing, grafting or
Bolted form is realized, can also be integrally machined, specifically be depended on the circumstances.
In summary, half-bridge power semiconductor module provided by the present invention, has been divided into three layers by power model, from it is lower extremely
Upper respectively semiconductor chip group, busbar group of confluxing and low sense composite bus bar, wherein, semiconductor chip group is the master of power model
Funtion part, the exchange interface of low sense composite bus bar and positive and negative layer interface conflux as the main circuit external interface of power model
Busbar group realizes that low sense composite bus bar and semiconductor chip group are conductively connected, and constitutes whole conductive input and output loop, should
The current sharing confluxed between busbar group and each chip of semiconductor chip group has been taken into account in loop, and loop is as far as possible overlapping, parasitic electricity
Sense greatly reduces, and improves the low perception and current sharing of power model.
A kind of half-bridge power semiconductor module provided by the present invention is described in detail above.Tool used herein
Body example is set forth to the principle and embodiment of the present invention, and the explanation of above example is only intended to help and understands this hair
Bright and its core concept.It should be pointed out that for those skilled in the art, not departing from the principle of the invention
Under the premise of, some improvement and modification can also be carried out to the present invention, these are improved and modification also falls into the claims in the present invention
In protection domain.
Claims (9)
1. a kind of half-bridge power semiconductor module, it is characterised in that including：
Positioned at the semiconductor chip group of bottom；
Positioned at the low sense composite bus bar of top layer, the both sides of the low sense composite bus bar, which are each extended over, is provided with exchange interface and positive and negative
Layer interface, the low sense composite bus bar includes the negative layer busbar of lamination setting, positive layer busbar and exchanges layer busbar；
Positioned at intermediate layer some busbar groups of confluxing parallel with one another, wherein, the bottom of each busbar group of confluxing and described partly lead
Conflux end and the low sense composite bus bar at the top of corresponding semiconductor chip connection in body chipset, each busbar group of confluxing
Corresponding busbar connection.
2. module according to claim 1, it is characterised in that each busbar group of confluxing includes：
Just conflux busbar, the collection of die in the correspondence in the bottom pin and the semiconductor chip group of the busbar that just confluxing
Electrode is connected, conflux at the top of the busbar that just confluxing end and positive layer busbar connection；
The hair of die under correspondence in the negative busbar that confluxes, the bottom pin and the semiconductor chip group of the negative busbar that confluxes
Emitter-base bandgap grading is connected, conflux at the top of the negative busbar that confluxes end and negative layer busbar connection；
Exchange is confluxed busbar, the exchange conflux busbar bottom pin and the semiconductor chip group in correspondence on die
Connected with the public pole of lower die, the end of confluxing at the top of the busbar that confluxes that exchanges exchanges the connection of layer busbar with described.
3. module according to claim 2, it is characterised in that the busbar that just confluxes, negative remittance in each busbar group of confluxing
Stream busbar is parallel to each other with the busbar that confluxes is exchanged, and insulation division is provided between adjacent two busbars that conflux.
4. module according to claim 3, it is characterised in that each pin of the bottom of the busbar group of confluxing is two layers of folding
Bend pipe pin.
5. module according to claim 4, it is characterised in that the low sense composite bus bar is provided with the interface of preset number
Hole, the end of respectively confluxing at the top of the busbar group of confluxing is provided with and corresponding interface holes coordinate the end of confluxing of grafting raised.
6. module according to claim 5, it is characterised in that between the two neighboring pin of the busbar that just confluxing
It is raised away from the end of confluxing of each pin that predeterminated position is provided with a bearing of trend.
7. module according to claim 6, it is characterised in that between the two neighboring pin of the negative busbar that confluxes
It is raised away from the end of confluxing of each pin that predeterminated position is provided with a bearing of trend.
8. module according to claim 7, it is characterised in that between the two neighboring pin for exchanging the busbar that confluxes
Predeterminated position to be provided with a bearing of trend raised away from the end of confluxing of each pin.
9. the module according to any one of claim 1 to 8, it is characterised in that the low sense composite bus bar is provided with some
Through hole for the embedding insulating barrier between the negative layer busbar, positive layer busbar and exchange layer busbar.
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| CN112687644A (en) * | 2020-12-16 | 2021-04-20 | 株洲中车时代半导体有限公司 | Integrated radiator IGBT power device with low-inductance composite busbar structure |
| CN112750803A (en) * | 2019-10-31 | 2021-05-04 | 株洲中车时代电气股份有限公司 | Busbar terminal and IGBT power module |
| EP3961885A4 (en) * | 2019-04-22 | 2022-06-01 | Mitsubishi Electric Corporation | Bus bar module |
| US11444036B2 (en) | 2018-07-18 | 2022-09-13 | Delta Electronics (Shanghai) Co., Ltd. | Power module assembly |
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| CN112750803A (en) * | 2019-10-31 | 2021-05-04 | 株洲中车时代电气股份有限公司 | Busbar terminal and IGBT power module |
| CN112687644A (en) * | 2020-12-16 | 2021-04-20 | 株洲中车时代半导体有限公司 | Integrated radiator IGBT power device with low-inductance composite busbar structure |
| CN112687644B (en) * | 2020-12-16 | 2024-04-19 | 株洲中车时代半导体有限公司 | Integrated radiator IGBT power device with low-inductance composite busbar structure |
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| CN106971992B (en) | 2019-04-05 |
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