CN106962993B - A kind of stealthy cape of controllable Three Dimensional Thermal based on multilayer chalcogenide - Google Patents
A kind of stealthy cape of controllable Three Dimensional Thermal based on multilayer chalcogenide Download PDFInfo
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- CN106962993B CN106962993B CN201710062108.7A CN201710062108A CN106962993B CN 106962993 B CN106962993 B CN 106962993B CN 201710062108 A CN201710062108 A CN 201710062108A CN 106962993 B CN106962993 B CN 106962993B
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- 150000004770 chalcogenides Chemical class 0.000 title claims abstract description 65
- 238000000034 method Methods 0.000 claims abstract description 14
- 238000009826 distribution Methods 0.000 claims abstract description 13
- 238000002425 crystallisation Methods 0.000 claims abstract description 12
- 230000008025 crystallization Effects 0.000 claims abstract description 8
- 239000012530 fluid Substances 0.000 claims abstract description 8
- 239000000203 mixture Substances 0.000 claims abstract description 5
- 239000002184 metal Substances 0.000 claims description 17
- 229910052751 metal Inorganic materials 0.000 claims description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 9
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 8
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 8
- 229910052681 coesite Inorganic materials 0.000 claims description 8
- 229910052593 corundum Inorganic materials 0.000 claims description 8
- 229910052906 cristobalite Inorganic materials 0.000 claims description 8
- 239000000377 silicon dioxide Substances 0.000 claims description 8
- 229910052682 stishovite Inorganic materials 0.000 claims description 8
- 229910052905 tridymite Inorganic materials 0.000 claims description 8
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 8
- 239000004033 plastic Substances 0.000 claims description 7
- 229920003023 plastic Polymers 0.000 claims description 7
- 239000005304 optical glass Substances 0.000 claims description 6
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 5
- 150000001875 compounds Chemical class 0.000 claims description 5
- 239000005864 Sulphur Substances 0.000 claims description 4
- 229920005830 Polyurethane Foam Polymers 0.000 claims description 3
- XOLBLPGZBRYERU-UHFFFAOYSA-N SnO2 Inorganic materials O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 3
- 238000005566 electron beam evaporation Methods 0.000 claims description 3
- 239000011494 foam glass Substances 0.000 claims description 3
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 3
- 239000011496 polyurethane foam Substances 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 239000012808 vapor phase Substances 0.000 claims description 3
- 229910005900 GeTe Inorganic materials 0.000 claims description 2
- 235000012241 calcium silicate Nutrition 0.000 claims description 2
- 238000000151 deposition Methods 0.000 claims description 2
- 230000008021 deposition Effects 0.000 claims description 2
- 239000007792 gaseous phase Substances 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 claims description 2
- 239000011521 glass Substances 0.000 claims 2
- 229920006327 polystyrene foam Polymers 0.000 claims 2
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 229910052791 calcium Inorganic materials 0.000 claims 1
- 239000011575 calcium Substances 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 230000008569 process Effects 0.000 abstract description 5
- 230000001351 cycling effect Effects 0.000 abstract 1
- 230000006870 function Effects 0.000 description 12
- 238000005516 engineering process Methods 0.000 description 10
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- 238000013461 design Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
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- 239000002775 capsule Substances 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
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- 230000004907 flux Effects 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
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- 238000011160 research Methods 0.000 description 2
- 239000005294 BK7 Substances 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000006244 Medium Thermal Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910001215 Te alloy Inorganic materials 0.000 description 1
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- 150000001336 alkenes Chemical class 0.000 description 1
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- 238000005229 chemical vapour deposition Methods 0.000 description 1
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- 229910052802 copper Inorganic materials 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
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- 230000003628 erosive effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 238000002164 ion-beam lithography Methods 0.000 description 1
- 230000035800 maturation Effects 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 239000005445 natural material Substances 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920001228 polyisocyanate Polymers 0.000 description 1
- 239000005056 polyisocyanate Substances 0.000 description 1
- 229920006389 polyphenyl polymer Polymers 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 239000013049 sediment Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- -1 substrate layer Chemical class 0.000 description 1
- 150000005846 sugar alcohols Polymers 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
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Classifications
-
- A—HUMAN NECESSITIES
- A41—WEARING APPAREL
- A41D—OUTERWEAR; PROTECTIVE GARMENTS; ACCESSORIES
- A41D3/00—Overgarments
- A41D3/08—Capes
-
- A—HUMAN NECESSITIES
- A41—WEARING APPAREL
- A41D—OUTERWEAR; PROTECTIVE GARMENTS; ACCESSORIES
- A41D13/00—Professional, industrial or sporting protective garments, e.g. surgeons' gowns or garments protecting against blows or punches
- A41D13/002—Professional, industrial or sporting protective garments, e.g. surgeons' gowns or garments protecting against blows or punches with controlled internal environment
- A41D13/005—Professional, industrial or sporting protective garments, e.g. surgeons' gowns or garments protecting against blows or punches with controlled internal environment with controlled temperature
- A41D13/0051—Heated garments
-
- A—HUMAN NECESSITIES
- A41—WEARING APPAREL
- A41D—OUTERWEAR; PROTECTIVE GARMENTS; ACCESSORIES
- A41D31/00—Materials specially adapted for outerwear
- A41D31/02—Layered materials
-
- A—HUMAN NECESSITIES
- A41—WEARING APPAREL
- A41D—OUTERWEAR; PROTECTIVE GARMENTS; ACCESSORIES
- A41D2400/00—Functions or special features of garments
- A41D2400/10—Heat retention or warming
- A41D2400/12—Heat retention or warming using temperature-controlled means
Landscapes
- Engineering & Computer Science (AREA)
- Textile Engineering (AREA)
- Environmental & Geological Engineering (AREA)
- Health & Medical Sciences (AREA)
- General Health & Medical Sciences (AREA)
- Physical Education & Sports Medicine (AREA)
- Laminated Bodies (AREA)
Abstract
The present invention provides a kind of stealthy cape of controllable Three Dimensional Thermal based on multilayer chalcogenide.The controllable stealthy cape of Three Dimensional Thermal covers shell by the surface that chalcogenide forms and realizes.Wherein, surface covering shell is that multiple chalcogenide circular layers are superimposed composition from bottom to top, by the crystallization degree for controlling chalcogenide in different circular layers, the bulk thermal conductivity constants that every layer of correspondence can be made different, obtain the stealthy required three-dimensional thermal conductivity distribution of heat, and then making hot-fluid around behind cape region, restore original distribution in temperature field, realizes the stealthy function of heat.Meanwhile by the anti-crystallization process of crystallization of chalcogenide in each circular layer of loop control, realizing the real-time ON/OFF performance of the stealthy cape of heat, to overcome the shortcomings that stealthy cape of heat is unable to cycling switch.
Description
Technical field
The implementation method and dress of the present invention relates to a kind of stealthy cape of controllable Three Dimensional Thermal based on multilayer chalcogenide
It sets, can be applied to hot-fluid control field.
Background technology
2006, document 1：“J.B.Pendry et al,SCIENCE,2006(312):1780 " are put forward for the first time using different
The direction of propagation of light wave can be manipulated to medium, realized optic camouflage clothing concept, caused the extensive concern of people, become optics
The research hotspot in field.At the same time, as an expansion field of optic camouflage clothing application, i.e., heat is manipulated by artificial structure
Direction is flowed, realizes the stealthy hot issue for also quickly becoming thermodynamics field of calorifics.2013, document 2：
“R.Schittny et al,Phys.Rev.Lett.2013(110):195901 " have made two using copper and dimethione
Tie up circular heat cape, experimental verification stealth effect.2013, document 3：“T.Z.Yang et al,J.Phys.D:
Appl.Phys.2013(46):305102 " derive the hot cape transformation medium thermal conductivity with conformal random cross-sectional shape
Expression formula, and simulation analysis its thermal conduction characteristic.2014, document 4：“F.C.Mao et al,Acta
Phys.Sin.2014(63):014401 " has carried out research and analysis to the hot cape of arbitrary cross section cylindricality, and it is non-to be derived two dimension
The thermal conductivity expression formula of the conformal hot cape of arbitrary shape.But the design of calorifics stealth structure at present, it is mostly based on two dimensional surface
Structural model emulates and experiment test, the three-dimensional stealthy cape of calorifics are then rarely reported.
In addition, the stealthy cape of current calorifics does not have tunable function (i.e. the stealthy on/off function of heat) also, sentence is changed
The structure of the stealthy cape of calorifics is talked about once it is determined that it is unalterable, main original that its Stealth Fighter, which will always exist, later
Can be by the natural material of active real-time monitoring because being a lack of thermal conductivity, this directly restricts the further hair of calorifics stealth technology
Exhibition.Therefore it needs to design a kind of simple and practical method to be tuned the stealthy function of heat of the stealthy cape of calorifics, he will be to heat
The practical application for learning stealthy cape has very important significance, and promotes its practicalization significantly.
Ge-Sb-Te alloys are most studied at present, maturation the most chalcogenide materials, are had been widely used for
In high-speed memory.Ge-Sb-Te chalcogenides have crystallization and noncrystalline two states, ambient light, heat, electricity, magnetic or
Under the action of stress, Ge-Sb-Te chalcogenides can change between crystallization and noncrystalline two states, and along with Ge-
The state of Sb-Te chalcogenides changes, and reversible change can also occur for bulk thermal conductivity constants.
The present invention provides a kind of controllable stealthy cape of heat based on multilayer chalcogenide.The controllable heat of the three-dimensional is stealthy
Cape covers shell by the surface that chalcogenide forms and realizes.Wherein, covering shell in surface is multiple chalcogenide rings
Superposition is constituted layer from bottom to top, by controlling the crystallization degree of chalcogenide in different circular layers, can make every layer it is corresponding different
Bulk thermal conductivity constants, obtain the stealthy required three-dimensional thermal conductivity distribution of heat, and then make hot-fluid around behind cape region, temperature field and
Thermoisopleth restores original distribution, realizes the stealthy function of heat.Meanwhile passing through the crystalline substance of chalcogenide in each circular layer of loop control
Change-anti-crystallization process, realizes the real-time ON/OFF performance of the stealthy cape of heat, lacking to overcome that the stealthy cape of heat cannot switch
Point.The present invention is based on chalcogenide crystallization-anti-crystallization principles, can effectively save energy, extend pseudo- ETL estimated time of loading；It is realizing
On, using the widely used device such as electricity, light-operated switch, the complexity and cost of the stealthy cape of heat are significantly reduced, is actually answered
It is big with potentiality.Using the technology of the present invention, the stealthy cape of calorifics can be made to be closed in most of time (i.e. not hidden
Body), so that other side is detected some invalid calorifics information, and open the stealthy function of heat when needed and allow other side's detection less than it
Thermal signals effectively hide various important informations, benumb enemy, and so that us is taken action has emergentness.The technology can make computer
Chip high efficiency and heat radiation, to improve computer performance；It realizes heat illusion, confuses infrared detector；Simultaneously spacecraft return capsule,
There is huge applications value in the equipment such as satellite.
Invention content
The technical problem to be solved by the present invention is to：Overcome the stealthy cape of existing calorifics be mostly based on two-dimension plane structure,
Do not have the shortcomings that tunability (being unable to the stealthy function of ON/OFF heat) with the stealthy function of heat of the stealthy cape of calorifics, utilizes sulphur
This common materials of compounds of group provide a kind of new technology for realizing the stealthy cape of controllable (can ON/OFF) three-dimensional calorifics so that
System has that simple in structure, speed is fast, easy to operation, energy consumption is small, the real-time advantages such as low with cost of implementation.
Technical scheme of the present invention：
A kind of stealthy cape of controllable Three Dimensional Thermal based on multilayer chalcogenide, including substrate layer, adiabatic wall, sulphur
The surface covering circular layer of compounds of group circular layer composition, the thin metal layer patch for investing chalcogenide circular layer inner wall, internal support
Shell, control unit and supply unit；Surface covering circular layer is that multiple chalcogenide circular layers are superimposed composition, each sulphur from bottom to top
The equal metal clad thin layer patch of compounds of group circular layer inner wall surface, have between each chalcogenide circular layer adiabatic wall every
From；Internal supporting shell is on the inside of multilayer chalcogenide circular layer, for carrying multilayer chalcogenide circular layer, the mesh being hidden
Mark is placed in the intracavitary of internal supporting shell；Internal supporting shell is contacted with thin metal layer patch, while internal supporting shell corresponds to each
Aperture is all drilled at thin metal layer patch, small aperture is 1 μm~1cm, depth is 1 μm~10cm；Conducting wire in aperture, leads
Line one end is connected on thin metal layer patch, and the other end passes through control unit successively and supply unit is grounded, and is controlled by manipulating
Unit regulates and controls heating time of the supply unit to every layer of chalcogenide circular layer, and then controls in different chalcogenide circular layers
The crystallization degree of chalcogenide makes every layer of chalcogenide circular layer correspond to different bulk thermal conductivity constants, realizes that heat is stealthy required
The distribution of three-dimensional thermal conductivity, and then make hot-fluid around behind cape region, temperature field and thermoisopleth restore original distribution, realize heat
Stealthy function.
The shape of the chalcogenide circular layer is hemisphere, cone, cosine body, positive body with cord, cylinder, semiellipse
Body, square, cuboid or hexahedron, each chalcogenide circular layer independent control and work；The chalcogenide ring
The material of layer is GeTe, Ge2Sb2Te5、Ge1Sb2Te4、Ge2Sb2Te4、Ge3Sb4Te8、Ge15Sb85Or Ag5In6Sb59Te30, wide
Degree is 1 μm~10cm, thickness is 20nm~10cm.
The thin metal layer patch is Al pieces, Ag pieces, Au pieces, Cu pieces or Ni pieces, and width is 1 μm~10cm, thickness
At 20 nanometers to 10 centimetres, the width of adiabatic wall is 20nm~10cm in 1 nanometer to 10 centimetres, thickness.
The material of the inside supporting shell is polyimides, plastics, BK7 optical glass, SiO2、Si3N4Or Al2O3；
The adiabatic wall is calcium silicates, polyalcohol/polyisocyanates, rigid polyurethane foam, polyphenyl second
Alkene foamed plastics, foam glass, In2O3、SnO2Or ITO.
The substrate layer is BK7 optical glass, SiO2、Si3N4Or Al2O3；
The control unit is automatically controlled, light-operated, acoustic control or magnetic switch；The supply unit is electric energy, thermal energy, light
Energy.
The multilayer chalcogenide circular layer is realized by Material growth technique, including electron beam evaporation, metal are organic
Compound chemical gaseous phase deposition, vapor phase epitaxial growth and molecular beam epitaxial method.
Beneficial effects of the present invention：The present invention is based on chalcogenide crystallization-anti-crystallization principles, can effectively save energy
Amount extends pseudo- ETL estimated time of loading；In realization, using the widely used device such as electricity, light-operated switch, the stealthy cape of heat is significantly reduced
Complexity and cost, practical application potentiality are big.The technology can make computer chip high efficiency and heat radiation, to improve computer
Energy；It realizes heat illusion, confuses infrared detector；There is in the equipment such as spacecraft return capsule, satellite huge applications value simultaneously.
The present invention provides a kind of stealthy cape of controllable Three Dimensional Thermal based on multilayer chalcogenide, can be by additional
Electricity, heat, light or magnetic field are distributed the thermal conductivity for changing chalcogenide this common materials, provide it is a kind of realize it is controllable (can
ON/OFF) the three-dimensional stealthy cape of calorifics new technology so that system has that simple in structure, speed is fast, easy to operation, energy consumption is small, real
The advantages such as Shi Xingqiang and cost of implementation are low.
Description of the drawings
Fig. 1 (a) is a kind of stealthy cape of controllable Three Dimensional Thermal being based on N layers of (N >=1) chalcogenide provided by the invention
Sectional drawing.
Fig. 1 (b) is a kind of stealthy cape of controllable Three Dimensional Thermal being based on N layers of (N >=1) chalcogenide provided by the invention
Vertical view.
Fig. 2 (a) is internal supporting shell schematic diagram.
Fig. 2 (b) is N layers of (N >=1) chalcogenide circular layer schematic diagram.
Fig. 2 (c) is the stealthy cape schematic diagram of controllable Three Dimensional Thermal.
Fig. 3 (a) is a kind of stealthy cape of controllable Three Dimensional Thermal being based on N layers of (N >=1) chalcogenide provided by the invention
The heat flux distribution situation under state is opened up in the stealthy function of heat.
Fig. 3 (b) is a kind of stealthy cape of controllable Three Dimensional Thermal being based on N layers of (N >=1) chalcogenide provided by the invention
Heat flux distribution situation under the stealthy function closed state of heat.
In figure：1 substrate layer；
2 are based on the stealthy cape of controllable Three Dimensional Thermal of N layers of (N >=1) chalcogenide circular layer；
3 thin metal layer patches；4 adiabatic walls；5 inside supporting shells；The 6 stealthy regions of heat；7 apertures；
8 conducting wires；9 control units；10 supply units；11 ground wires；12 thermoisopleths.
Specific implementation mode
To make the content of technical scheme of the present invention be more clear, this is described in detail below in conjunction with technical solution and attached drawing
The specific implementation mode of invention.Material growth technology therein includes：Electron beam evaporation, metallo-organic compound chemical vapor deposition
It forms sediment, the common technologies such as vapor phase epitaxial growth and molecular beam epitaxy technique.Mask process therein includes electron beam exposure and focusing
The common technologies such as ion beam exposure.Etching technics therein includes wet etching and dry etching, as acid system etching, electron beam are carved
The conventional process such as erosion, focused-ion-beam lithography and reactive ion beam etching (RIBE).
Embodiment 1
First, internal supporting shell 5 is formed on substrate 1 using Material growth technique, as shown in attached drawing 2 (a)；
Then, by Material growth technique and mask process, by designed chalcogenide circular layer in substrate 1 and inside
The outer surface of supporting shell 5 is successively superimposed from the bottom to top, realizes that N layers of chalcogenide surface cover circular layer 2, such as attached drawing 2 (b) institute
Show.Wherein, finite time-domain calculus of finite differences, FInite Element etc. may be used in the design of chalcogenide surface circular layer and internal supporting shell
Algorithm.Thin metal layer patch 3 is formed on N layers of chalcogenide surface by coating process and covers the internal ring wall of circular layer 2 and interior
Between the outer wall of portion's supporting shell 5.
Internal supporting shell corresponds at each thin metal layer patch 3, is all drilled with aperture 7.Conducting wire 8 in aperture, conducting wire
One end is connected on thin metal layer patch 3, and the other end is controlled by control unit 9 and the ground wire of supply unit 10 11 by manipulating
Unit 9 processed can regulate and control action time of the supply unit 10 to every layer of chalcogenide, and then control chalcogenide in different circular layers
The crystallization degree for closing object can make every layer of chalcogenide circular layer correspond to different bulk thermal conductivity constants, realize that heat is stealthy required
Three-dimensional thermal conductivity distribution, and then make hot-fluid around behind cape region, temperature field and thermoisopleth restore original distribution, realize that heat is hidden
Body function.A kind of stealthy cape of controllable Three Dimensional Thermal based on multilayer chalcogenide is finally realized, as shown in attached drawing 2 (c).
As shown in figure 3, when the sulfur family in a kind of stealthy cape of controllable Three Dimensional Thermal based on N layers of (N >=1) chalcogenide
The generating state of compound changes, and bulk thermal conductivity constants distribution can also change, and then realize the regulation and control of direction of heat flow, realize
The "ON" of the stealthy function of heat shields external heat and so that institute's hidden objects are not detected by the external world in internal supporting shell 5, i.e.,
Hot-fluid passes through the stealthy bucket of the heat by not changing its thermoisopleth (shown in such as Fig. 3 (a)) and "Off" i.e. hot-fluid after the stealthy cape of the heat
Its thermoisopleth changes after paulin, causes put object in internal supporting shell 5 that can be detected by the external world (shown in such as Fig. 3 (b)).
The above is the technical principle and specific example that the present invention applies, the equivalent change done according to the concept of the present invention
Change, if its scheme for being used still covered without departing from the description and the appended drawings spirit when, should all within the scope of the invention,
Illustrate hereby.
Claims (10)
1. a kind of stealthy cape of controllable Three Dimensional Thermal based on multilayer chalcogenide, which is characterized in that the controllable Three Dimensional Thermal
Stealthy cape include substrate layer, adiabatic wall, chalcogenide circular layer composition surface covering circular layer, invest chalcogenide
The thin metal layer patch of circular layer inner wall, internal supporting shell, control unit and supply unit；It is multiple chalcogenides that surface, which covers circular layer,
It closes object circular layer and is superimposed composition, each equal metal clad thin layer patch of chalcogenide circular layer inner wall surface, each sulphur from bottom to top
There is adiabatic wall to be isolated between compounds of group circular layer；Internal supporting shell is on the inside of multilayer chalcogenide circular layer, is used for
Multilayer chalcogenide circular layer is carried, the target being hidden is placed in the intracavitary of internal supporting shell；Internal supporting shell and thin metal layer
Patch contacts, while internal supporting shell corresponds at each thin metal layer patch and is drilled with aperture, small aperture be 1 μm~1cm,
Depth is 1 μm~10cm；Conducting wire in aperture, conducting wire one end are connected on thin metal layer patch, and the other end is successively by control
Unit and supply unit ground connection processed, by manipulating control unit, heating of the regulation and control supply unit to every layer of chalcogenide circular layer
Time, and then the crystallization degree of chalcogenide in different chalcogenide circular layers is controlled, make every layer of chalcogenide circular layer pair
It answers different bulk thermal conductivity constants, realizes the stealthy required three-dimensional thermal conductivity distribution of heat, and then make hot-fluid around behind cape region, temperature
Degree field and thermoisopleth restore original distribution, realize the stealthy function of heat.
2. the stealthy cape of controllable Three Dimensional Thermal according to claim 1, which is characterized in that the chalcogenide circular layer
Shape be cone, cosine body, positive body with cord, cylinder, semiellipsoid, cuboid or hexahedron, each chalcogenide ring
Layer independent control and work；The material of the chalcogenide circular layer is GeTe, Ge2Sb2Te5、Ge1Sb2Te4、Ge2Sb2Te4、
Ge3Sb4Te8、Ge15Sb85Or Ag5In6Sb59Te30, width is 1 μm~10cm, thickness is 20nm~10cm.
3. the stealthy cape of controllable Three Dimensional Thermal according to claim 1 or 2, which is characterized in that the thin metal layer patch
Piece is Al pieces, Ag pieces, Au pieces, Cu pieces or Ni pieces, and width is 1 μm~10cm, thickness is 20nm~10cm.
4. the stealthy cape of controllable Three Dimensional Thermal according to claim 1 or 2, which is characterized in that the adiabatic wall
It is calcium silicates, rigid polyurethane foam, polystyrene foam plastics, foam glass, In2O3、SnO2Or ITO, width are
1nm~10cm, thickness are 20nm~10cm.
5. the stealthy cape of controllable Three Dimensional Thermal according to claim 3, which is characterized in that the adiabatic wall is silicon
Sour calcium, rigid polyurethane foam, polystyrene foam plastics, foam glass, In2O3、SnO2Or ITO, width 1nm
~10cm, thickness are 20nm~10cm.
6. the stealthy cape of controllable Three Dimensional Thermal according to claim 1,2 or 5, which is characterized in that the substrate layer is
BK7 optical glass, SiO2、Si3N4Or Al2O3；The material of the inside supporting shell is plastics, BK7 optical glass, SiO2、
Si3N4Or Al2O3。
7. the stealthy cape of controllable Three Dimensional Thermal according to claim 3, which is characterized in that the substrate layer is BK7 light
Learn glass, SiO2、Si3N4Or Al2O3；The material of the inside supporting shell is plastics, BK7 optical glass, SiO2、Si3N4Or
Al2O3。
8. the stealthy cape of controllable Three Dimensional Thermal according to claim 4, which is characterized in that the substrate layer is BK7 light
Learn glass, SiO2、Si3N4Or Al2O3；The material of the inside supporting shell is plastics, BK7 optical glass, SiO2、Si3N4Or
Al2O3。
9. the stealthy cape of controllable Three Dimensional Thermal according to claim 1,2,5,7 or 8, which is characterized in that the control
Unit is automatically controlled, light-operated, acoustic control or magnetic switch；The supply unit is electric energy, thermal energy or luminous energy.
10. the stealthy cape of controllable Three Dimensional Thermal according to claim 1,2,5,7 or 8, which is characterized in that the multilayer
Chalcogenide circular layer realized by Material growth technique, including electron beam evaporation, metallo-organic compound chemical gaseous phase deposition,
Vapor phase epitaxial growth and molecular beam epitaxial method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710062108.7A CN106962993B (en) | 2017-01-31 | 2017-01-31 | A kind of stealthy cape of controllable Three Dimensional Thermal based on multilayer chalcogenide |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710062108.7A CN106962993B (en) | 2017-01-31 | 2017-01-31 | A kind of stealthy cape of controllable Three Dimensional Thermal based on multilayer chalcogenide |
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| Publication Number | Publication Date |
|---|---|
| CN106962993A CN106962993A (en) | 2017-07-21 |
| CN106962993B true CN106962993B (en) | 2018-08-21 |
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