CN106961215B - A kind of non-anti-Buck-boost transformation chip of high efficiency with instantaneous correction function - Google Patents
A kind of non-anti-Buck-boost transformation chip of high efficiency with instantaneous correction function Download PDFInfo
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- CN106961215B CN106961215B CN201710335942.9A CN201710335942A CN106961215B CN 106961215 B CN106961215 B CN 106961215B CN 201710335942 A CN201710335942 A CN 201710335942A CN 106961215 B CN106961215 B CN 106961215B
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- field
- effect tube
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- buck
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Classifications
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/10—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M3/145—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M3/155—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/156—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
- H02M3/158—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
- H02M3/1582—Buck-boost converters
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/32—Means for protecting converters other than automatic disconnection
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Amplifiers (AREA)
- Dc-Dc Converters (AREA)
Abstract
The invention discloses a kind of with the instantaneous non-anti-Buck-boost transformation chip of high efficiency for correcting function, including the first amplifier, the second amplifier, third amplifier, four high guaily unit, the 5th amplifier, the first field-effect tube, the second field-effect tube, third field-effect tube, the 4th field-effect tube, the 5th field-effect tube, the first nor gate, the second nor gate and inductance, this has in the instantaneous non-anti-Buck-boost transformation chip of high efficiency for correcting function, by the passgate structures being made of third field-effect tube and the 4th field-effect tube, the working efficiency of chip is improved；Moreover, a nor gate is added between Vx1 and Vgate_Is1, improves the efficiency and stability of chip.
Description
Technical field
It is the present invention relates to transformation chip field, in particular to a kind of with the instantaneous non-anti-Buck- of high efficiency for correcting function
Boost transformation chip.
Background technique
The existing non-anti-universal efficiency of Buck-boost transformation chip of direct current is relatively low, is not suitable at low-load (10mA-1A)
In the case where use.It cannot accomplish voltage change ratio if using Buck structure (decompression) or Boost structure (boosting)
Flexible transformation (can not only boost but also can be depressured).Then, a efficient buck voltage conversion chip becomes newly
Demand；Moreover, in non-anti-Buck-boost transformation chip operating status, always occur within a very short time
Instantaneous short-circuit situation.We are known as take advantage of a situation short-circuit condition (Dead-time).This short-circuit condition will affect the efficiency of chip
And stability.
Summary of the invention
The technical problem to be solved by the present invention is for overcome the deficiencies in the prior art, providing a kind of with instantaneous correction
The non-anti-Buck-boost transformation chip of the high efficiency of function.
The technical solution adopted by the present invention to solve the technical problems is: a kind of non-with the instantaneous high efficiency for correcting function
Anti- Buck-boost transformation chip, including the first amplifier, the second amplifier, third amplifier, four high guaily unit, the 5th amplifier, first
Effect pipe, the second field-effect tube, third field-effect tube, the 4th field-effect tube, the 5th field-effect tube, the first nor gate, second or
The output end of NOT gate and inductance, first amplifier is connect with the grid of the first field-effect tube, the leakage of first field-effect tube
The source electrode of extremely external input voltage, first field-effect tube is connect with the source electrode of the second field-effect tube, second field-effect
The output end of the grounded drain of pipe, second amplifier is connect with the grid of the second field-effect tube, second field-effect tube
Grid is connect with one of input terminal of the first nor gate, and another input terminal of first nor gate passes through inductance and the
One of input terminal of two nor gates connects, another input terminal of second nor gate and the output end of the 5th amplifier connect
It connects, one end of the inductance is connect with the source electrode of the first field-effect tube, another source with the 5th field-effect tube of the inductance
Pole connection, the output end of the third amplifier connect with the grid of third field-effect tube, the source electrode of the third field-effect tube with
The drain electrode of 4th field-effect tube connects, and the drain electrode of the third field-effect tube is connect with the source electrode of the 4th field-effect tube, and described the
The grid of four field-effect tube is connect with the output end of four high guaily unit, the output end of the 5th amplifier and the grid of the 5th field-effect tube
Pole connection.
Specifically, the ground terminal of the ground terminal of the ground terminal of first amplifier, the second amplifier, third amplifier, the 4th fortune
The ground terminal of the ground terminal and the 5th amplifier put is grounded.
Specifically, the power end of the power end of the power end of first amplifier, the second amplifier, third amplifier and the 5th fortune
The external input voltage of the power end put.
Specifically, the power end of the four high guaily unit is connect with the drain electrode of the 4th field-effect tube.
Specifically, first field-effect tube and the 4th field-effect tube are n-channel field-effect tube, second field-effect
Pipe, third field-effect tube and the 5th field-effect tube are p-channel field-effect tube.
Wherein, in non-anti-Buck-boost transformation chip circuit, original p-channel field-effect tube transmission has been changed to
Door is made of third field-effect tube and the 4th field-effect tube, advantage of this is that
1) can make the position HS2 conducting resistance no matter when output voltage is high or when low all keep compared with
Low resistance value, and then improve delivery efficiency.
2) in the state that input voltage is with output voltage difference, it is necessary to increase complicated grid stage drive circuit to ensure
Electron tube at HS2 can be opened effectively, and apply this structure, so that it may without using complicated driving circuit to improve
Delivery efficiency.
In fact: the current potential of the output end of the second amplifier is Vgate_Is1, and the current potential of the source electrode of the second field-effect tube is
Vx1。
A nor gate is added between the Vx1 and Vgate_Is1 of non-anti-Buck-boost transformation chip circuit, it can be with wink
When detect abnormal signal when smooth short circuit occurs, can be surveyed by the length that Logical processing unit measures this signal
Measure the length of time of instantaneous short-circuit.It is instantaneous short that can be removed according to this length come the control signal of subtle modifier controller
Road event lift chip delivery efficiency.
The invention has the advantages that this has the instantaneous non-anti-Buck-boost transformation chip of high efficiency for correcting function
In, by the passgate structures being made of third field-effect tube and the 4th field-effect tube, improve the working efficiency of chip；Not only
In this way, a nor gate is added between Vx1 and Vgate_Is1, the efficiency and stability of chip are improved.
Detailed description of the invention
Fig. 1 is the structural representation with the instantaneous non-anti-Buck-boost transformation chip of high efficiency for correcting function of the invention
Figure.
In figure: the first amplifier of U1., the second amplifier of U2., U3. third amplifier, U4. four high guaily unit, the 5th amplifier of U5., Q1.
First field-effect tube, the second field-effect tube of Q2., Q3. third field-effect tube, the 4th field-effect tube of Q4., the 5th field-effect tube of Q5.,
N1. the first nor gate, the second nor gate of N2., L1. inductance.
Specific embodiment
The following examples are used to illustrate the present invention, but are not intended to limit the scope of the present invention..
As shown in Figure 1, a kind of with the instantaneous non-anti-Buck-boost transformation chip of high efficiency for correcting function, including first
Amplifier U1, the second amplifier U2, third amplifier U3, four high guaily unit U4, the 5th amplifier U5, the first field-effect tube Q1, the second field-effect
Pipe Q2, third field-effect tube Q3, the 4th field-effect tube Q4, the 5th field-effect tube Q5, the first nor gate N1, the second nor gate N2 and
Inductance L1, the output end of the first amplifier U1 are connect with the grid of the first field-effect tube Q1, the first field-effect tube Q1's
Drain external input voltage, and the source electrode of the first field-effect tube Q1 is connect with the source electrode of the second field-effect tube Q2, and described second
The output end of the grounded drain of field-effect tube Q2, the second amplifier U2 is connect with the grid of the second field-effect tube Q2, and described
The grid of two field-effect tube Q2 is connect with one of input terminal of the first nor gate N1, the first nor gate N1 another
Input terminal is connect by inductance L1 with one of input terminal of the second nor gate N2, and another of the second nor gate N2 is defeated
Enter end to connect with the output end of the 5th amplifier U5, one end of the inductance L1 is connect with the source electrode of the first field-effect tube Q1, described
Another of inductance L1 is connect with the source electrode of the 5th field-effect tube Q5, the output end and third field-effect tube of the third amplifier U3
The grid of Q3 connects, the drain electrode connection of the source electrode and the 4th field-effect tube Q4 of the third field-effect tube Q3, the third field effect
Should the drain electrode of pipe Q3 connect with the source electrode of the 4th field-effect tube Q4, the grid of the 4th field-effect tube Q4 and four high guaily unit U4's
Output end connection, the output end of the 5th amplifier U5 are connect with the grid of the 5th field-effect tube Q5.
Specifically, the ground terminal of the ground terminal of the ground terminal of the first amplifier U1, the second amplifier U2, third amplifier U3,
The ground terminal of the ground terminal of four high guaily unit U4 and the 5th amplifier U5 are grounded.
Specifically, the power end of the power end of the power end of the first amplifier U1, the second amplifier U2, third amplifier U3 and
The external input voltage of the power end of 5th amplifier U5.
Specifically, the power end of the four high guaily unit U4 is connect with the drain electrode of the 4th field-effect tube Q4.
Specifically, the first field-effect tube Q1 and the 4th field-effect tube Q4 are n-channel field-effect tube, described second
Effect pipe Q2, third field-effect tube Q3 and the 5th field-effect tube Q5 are p-channel field-effect tube.
Wherein, in the position HS2 of non-anti-Buck-boost transformation chip circuit figure, by original p-channel field-effect tube
Passgate structures have been changed to, have been made of third field-effect tube Q3 and the 4th field-effect tube Q4, advantage of this is that
1) conducting resistance for the position HS2 that can make no matter when output voltage is high or when low all keep compared with
Low resistance value, and then improve delivery efficiency.
2) in the state that input voltage is with output voltage difference, it is necessary to increase complicated grid stage drive circuit to ensure
Electron tube at HS2 can be opened effectively, and apply this structure, so that it may without using complicated driving circuit to improve
Delivery efficiency.
In fact: the current potential of the output end of the second amplifier U2 is Vgate_Is1, the current potential of the source electrode of the second field-effect tube Q2
For Vx1.
A nor gate is added between the Vx1 and Vgate_Is1 of non-anti-Buck-boost transformation chip circuit, it can be with wink
When detect abnormal signal when smooth short circuit occurs, can be surveyed by the length that Logical processing unit measures this signal
Measure the length of time of instantaneous short-circuit.It is instantaneous short that can be removed according to this length come the control signal of subtle modifier controller
Road event lift chip delivery efficiency.
Compared with prior art, this has in the instantaneous non-anti-Buck-boost transformation chip of high efficiency for correcting function, leads to
The passgate structures being made of third field-effect tube Q3 and the 4th field-effect tube Q4 are crossed, the working efficiency of chip is improved；Not only
In this way, a nor gate is added between Vx1 and Vgate_Is1, the efficiency and stability of chip are improved.
Although above having used general explanation and specific embodiment, the present invention is described in detail, at this
On the basis of invention, it can be made some modifications or improvements, this will be apparent to those skilled in the art.Therefore,
These modifications or improvements without departing from theon the basis of the spirit of the present invention are fallen within the scope of the claimed invention.
Claims (5)
1. a kind of with the instantaneous non-anti-Buck-boost transformation chip of high efficiency for correcting function, which is characterized in that including first
Amplifier, the second amplifier, third amplifier, four high guaily unit, the 5th amplifier, the first field-effect tube, the second field-effect tube, third field-effect
Pipe, the 4th field-effect tube, the 5th field-effect tube, the first nor gate, the second nor gate and inductance, the output end of first amplifier
It is connect with the grid of the first field-effect tube, the external input voltage of drain electrode of first field-effect tube, first field-effect tube
Source electrode connect with the source electrode of the second field-effect tube, the grounded drain of second field-effect tube, the output of second amplifier
End is connect with the grid of the second field-effect tube, the grid of second field-effect tube and one of input terminal of the first nor gate
Another input terminal of connection, first nor gate is connect by inductance with one of input terminal of the second nor gate, institute
Another input terminal for stating the second nor gate is connect with the output end of the 5th amplifier, one end of the inductance and the first field-effect tube
Source electrode connection, the other end of the inductance connect with the source electrode of the 5th field-effect tube, the output end of the third amplifier and the
The grid of three field-effect tube connects, the source electrode of the third field-effect tube and the drain electrode connection of the 4th field-effect tube, the third
The drain electrode of field-effect tube is connect with the source electrode of the 4th field-effect tube, the output of the grid and four high guaily unit of the 4th field-effect tube
End connection, the output end of the 5th amplifier are connect with the grid of the 5th field-effect tube.
2. as described in claim 1 have the instantaneous non-anti-Buck-boost transformation chip of high efficiency for correcting function, feature
Be, the ground terminal of first amplifier, the ground terminal of the second amplifier, the ground terminal of third amplifier, four high guaily unit ground terminal
It is grounded with the ground terminal of the 5th amplifier.
3. as described in claim 1 have the instantaneous non-anti-Buck-boost transformation chip of high efficiency for correcting function, feature
It is, the power end of first amplifier, the power end of the second amplifier, the power end of third amplifier and the power end of the 5th amplifier
External input voltage.
4. as described in claim 1 have the instantaneous non-anti-Buck-boost transformation chip of high efficiency for correcting function, feature
It is, the power end of the four high guaily unit is connect with the drain electrode of the 4th field-effect tube.
5. as described in claim 1 have the instantaneous non-anti-Buck-boost transformation chip of high efficiency for correcting function, feature
It is, first field-effect tube and the 4th field-effect tube are n-channel field-effect tube, second field-effect tube, third field
Effect pipe and the 5th field-effect tube are p-channel field-effect tube.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710335942.9A CN106961215B (en) | 2017-05-12 | 2017-05-12 | A kind of non-anti-Buck-boost transformation chip of high efficiency with instantaneous correction function |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710335942.9A CN106961215B (en) | 2017-05-12 | 2017-05-12 | A kind of non-anti-Buck-boost transformation chip of high efficiency with instantaneous correction function |
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| Publication Number | Publication Date |
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| CN106961215A CN106961215A (en) | 2017-07-18 |
| CN106961215B true CN106961215B (en) | 2019-01-22 |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1175091A (en) * | 1996-04-25 | 1998-03-04 | 日本电气株式会社 | Semiconductor device |
| CN1505152A (en) * | 2002-11-29 | 2004-06-16 | 国际商业机器公司 | Reduced integrated circuit chip leakage and method of reducing leakage |
| CN101622774A (en) * | 2006-10-05 | 2010-01-06 | 先进模拟科技公司 | Utilize the low noise DC-DC converter of controlled diode conduction |
| CN102160271A (en) * | 2008-09-22 | 2011-08-17 | 富士通株式会社 | Control method for power control circuit, power supply unit, power supply system, and power controller control method |
-
2017
- 2017-05-12 CN CN201710335942.9A patent/CN106961215B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1175091A (en) * | 1996-04-25 | 1998-03-04 | 日本电气株式会社 | Semiconductor device |
| CN1505152A (en) * | 2002-11-29 | 2004-06-16 | 国际商业机器公司 | Reduced integrated circuit chip leakage and method of reducing leakage |
| CN101622774A (en) * | 2006-10-05 | 2010-01-06 | 先进模拟科技公司 | Utilize the low noise DC-DC converter of controlled diode conduction |
| CN102160271A (en) * | 2008-09-22 | 2011-08-17 | 富士通株式会社 | Control method for power control circuit, power supply unit, power supply system, and power controller control method |
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| CN106961215A (en) | 2017-07-18 |
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Granted publication date: 20190122 Termination date: 20190512 |