CN106953624B - MOSFET parallel overcurrent protection circuit - Google Patents
MOSFET parallel overcurrent protection circuit Download PDFInfo
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- CN106953624B CN106953624B CN201710260603.9A CN201710260603A CN106953624B CN 106953624 B CN106953624 B CN 106953624B CN 201710260603 A CN201710260603 A CN 201710260603A CN 106953624 B CN106953624 B CN 106953624B
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
- H03K17/0822—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in field-effect transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/14—Modifications for compensating variations of physical values, e.g. of temperature
- H03K17/145—Modifications for compensating variations of physical values, e.g. of temperature in field-effect transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/0027—Measuring means of, e.g. currents through or voltages across the switch
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/0054—Gating switches, e.g. pass gates
Abstract
The invention discloses a MOSFET parallel overcurrent protectionThe protection circuit comprises a group of MOSFETs connected in parallel and a driving circuit for driving the MOSFETs to work, and also comprises a voltage sampling circuit and a voltage comparison circuit, wherein the voltage sampling circuit is used for collecting source-drain voltages of the MOSFETs connected in parallel and generating a first comparison voltage to be output to the voltage comparison circuit, and the voltage comparison circuit is used for comparing the first comparison voltage with a second comparison voltage and then sending low or high level to control the driving circuit to turn off or not turn off the output of a MOSFET gate driving signal. The invention has the advantages of exquisite design, simple circuit structure and V detection by designing the sampling resistor DS Reactive drain current I D The structure of the current sensor is omitted, and the cost is reduced; the corresponding speed is high, the reliability is high, the second comparison voltage adopts the temperature compensation voltage, and the threshold voltage is adjustable relative to the preset fixed overcurrent protection threshold voltage and is more matched with the actual working condition, so that the applicability is stronger and the application is more flexible.
Description
Technical Field
The invention relates to an overcurrent protection circuit, in particular to a MOSFET parallel overcurrent protection circuit.
Background
A Metal-Oxide-semiconductor field effect transistor (MOSFET), which is abbreviated as a Metal-Oxide-Semiconductor Field-Effect Transistor, is a field-effect transistor (field-effect transistor) that can be widely used in analog circuits and digital circuits. MOSFETs can be classified into N-type and P-type MOSFETs, commonly referred to as NMOSFETs and PMOSFETs, according to their "channel" (working carrier) polarity.
The MOSFET has been widely used due to its advantages of good high frequency performance, small switching loss, high input impedance, small driving power, simple driving circuit, etc. In many low-voltage high-power application occasions, such as electric tricycles, sightseeing electric vehicles and small electric forklifts, especially in the recent years, the A00-level double 80 and double 100 pure electric vehicles and the like which are widely popularized in China are all exceptional, and a MOSFET parallel connection method is adopted.
However, due to the problems of process difference, wiring of the PCB and the like, the parallel MOSFETs are extremely easy to cause serious unbalance of loss and heat generation caused by unbalanced current, so that the failure is finally caused, the over-current protection of the MOS tube is very important, and the current common over-current protection has the following two methods, and the main advantages and disadvantages are as follows:
1. software current sampling and over-current protection: the processor collects current sampling signals output by the current sensor in real time, judges whether the current sensor belongs to an overcurrent state under the current working condition through a certain algorithm, and timely turns off PWM driving signals if necessary. The control method has great flexibility and intelligence due to the processing of software, for example, the overcurrent protection point can be dynamically regulated according to the real-time temperature of the motor and the main power device. However, the response time of the overcurrent protection is relatively long and the reliability is relatively low due to the intervention of software, and particularly, the overcurrent protection has no great effect on instantaneous high-current protection or short-circuit protection.
2. And (3) protecting hardware overcurrent: the sampling signal output by the current sensor is transmitted to the hardware comparison unit, and after the real-time sampling value is compared with the preset overcurrent protection threshold voltage, the output of the PWM driving signal is turned off, so that the method has the advantages of high response speed, high reliability and the like. However, because the overcurrent protection point is fixed, the intelligent compensation cannot be realized without good adaptability under the complex working condition.
Meanwhile, the two methods adopt the traditional output end current sensor sampling, so that the cost is increased, and the comprehensive protection cannot be realized in terms of a single protection mode.
In addition, current over-current protection measures lack consideration for temperature factors, since the maximum current that a MOSFET is allowed to withstand will change with changes in temperature conditions.
Disclosure of Invention
The invention aims to solve the problems in the prior art and provides a MOSFET parallel overcurrent protection circuit.
The aim of the invention is achieved by the following technical scheme:
the MOSFET parallel overcurrent protection circuit comprises a group of MOSFETs which are connected in parallel, a driving circuit for driving the MOSFETs to work, a voltage sampling circuit and a voltage comparison circuit, wherein the voltage sampling circuit is used for collecting source-drain voltages of the MOSFETs which are connected in parallel and generating a first comparison voltage to be output to the voltage comparison circuit, and the voltage comparison circuit compares the first comparison voltage with a second comparison voltage and then outputs a low or high level to control the driving circuit to turn off or not turn off the output of a MOSFET gate driving signal.
Preferably, the MOSFET is connected in parallel to an overcurrent protection circuit, wherein: the voltage sampling circuit comprises a diode, a resistor, a first sampling resistor and a second sampling resistor, wherein the cathode of the diode is connected with the drain electrode of each MOSFET, the anode of the diode is connected with one end of the resistor, the other end of the resistor is connected with the output end of the driving circuit and the grid electrode of each MOSEFT, the anode of the diode is also connected with one end of the first sampling resistor, the other end of the first sampling resistor is connected with the reverse input end of the comparator in the voltage comparison circuit and one end of the second sampling resistor, and the other end of the second sampling resistor is connected with the drain electrode of each MOSEFT.
Preferably, the MOSFET is connected in parallel to an overcurrent protection circuit, wherein: the resistance of the resistor is proportional to the driving voltage of the MOSFET.
Preferably, the MOSFET is connected in parallel to an overcurrent protection circuit, wherein: the first comparison voltage satisfies the following formula:
V1=（V DS +V D1 ）×R2/（R2+R1）
wherein V is DS Is MOSFET drain-source voltage, V D1 Is the diode forward turn-on voltage.
Preferably, the MOSFET is connected in parallel to an overcurrent protection circuit, wherein: the second comparison voltage is a preset reference voltage.
Preferably, the MOSFET is connected in parallel to an overcurrent protection circuit, wherein: a temperature compensation circuit is also included for sampling the operating temperature of the MOSFET and generating the second comparison voltage.
Preferably, the MOSFET is connected in parallel to an overcurrent protection circuit, wherein: the temperature compensation circuit comprises a third voltage dividing resistor and a temperature sampling resistor, one end of the third voltage dividing resistor is connected with a power supply end, the other end of the third voltage dividing resistor is connected with one end of the temperature sampling resistor and the positive input end of a comparator in the voltage comparison circuit, and the other end of the temperature sampling resistor is grounded.
Preferably, the MOSFET is connected in parallel to an overcurrent protection circuit, wherein: the temperature sampling resistor is a negative temperature coefficient thermistor.
Preferably, the MOSFET is connected in parallel to an overcurrent protection circuit, wherein: the temperature sampling resistor is arranged in close proximity to the MOSEFT.
Preferably, the MOSFET is connected in parallel to an overcurrent protection circuit, wherein: the resistance value of the third voltage dividing resistor is far from the resistance value change range of the temperature sampling resistor so that the change amplitude of the second comparison voltage calculated according to the following formula does not exceed a set value,
V2=VCC×R5/（R4+R5）
wherein VCC is the power supply terminal input voltage.
Preferably, the MOSFET is connected in parallel to an overcurrent protection circuit, wherein: the MOEFET parallel overcurrent protection circuit is at least applied to a driving circuit of a low-voltage high-power motor controller.
The technical scheme of the invention has the advantages that:
1. the invention has exquisite design and simple circuit structure, and is based on the drain-source voltage V of the MOS tube DS With drain current I D Variable characteristic curve, detection of V by designing sampling resistor DS To reflect drain current I D Therefore, the structure of the current sensor is omitted, and the cost is reduced; meanwhile, as no software is involved, the corresponding speed is high, the reliability is high, and the second comparison voltage adopts the temperature compensation voltage, and is adjustable relative to the preset fixed overcurrent protection threshold voltage and is more compatible with the actual working condition, so that the applicability is stronger and the application is more flexible.
2. By designing the resistor R3, firstly, the influence of the miller capacitance caused by the diode can be reduced, and secondly, the current can be absorbed from the driving signal as little as possible, and the loss can be reduced.
3. Because the temperature compensation circuit is combined to compensate, when the environment temperature of the MOSFET is higher, the trigger current value of the overcurrent protection point can be automatically reduced through temperature sampling, so that the effect of protecting the hardware of the controller is achieved; on the contrary, when the environment temperature of the MOSFET is lower, the current value of the overcurrent protection point is automatically increased, and the controller is allowed to output larger current, so that the temperature-sampling resistor is suitable for complex working conditions, and meanwhile, the temperature can be finely compensated by taking the current change as a main protection factor when the overcurrent protection is performed due to the optimization of the temperature-sampling resistor and the resistance research of the third voltage-dividing resistor.
Drawings
FIG. 1 is a schematic diagram of the structure of the present invention;
fig. 2 is a circuit diagram of the present invention.
Detailed Description
The objects, advantages and features of the present invention are illustrated and explained by the following non-limiting description of preferred embodiments. These embodiments are only typical examples of the technical scheme of the invention, and all technical schemes formed by adopting equivalent substitution or equivalent transformation fall within the scope of the invention.
The invention discloses a MOSFET parallel overcurrent protection circuit which is preferably applied to a driving circuit of a low-voltage high-power motor controller, wherein the driving circuit is based on a three-phase symmetrical structure of an alternating current motor, and as shown in figures 1-2, the relationship between each functional module and each functional module is only described for a lower bridge circuit in a U-phase driving circuit of the alternating current motor.
The MOSFET parallel overcurrent protection circuit comprises a group of parallel MOSFETQ 1 ，Q 2 -Q N And a driving circuit 1 for driving the MOSFET to operate, the MOEFETQ 1 ，Q 2 -Q N The drains of the two are connected with the U-phase output end of the alternating current motor, the sources of the two are connected with the negative DC-pole of the direct current power supply, and the grids of the two are respectively connected with the resistor R 7 ，R 8 -R N The driving circuit 1 comprises a buffer U2, wherein the buffer U2 is connected with a MOSFET GATE driving signal end GATE, and whether the MOSFET GATE driving signal is output or not is controlled by the on and off of the buffer U2.
The on and off of the buffer U2 are controlled by a voltage comparison circuit 3, the voltage comparison circuit 3 comprises a comparator U1, the reverse input end of the comparator U1 receives a first comparison voltage V1, the forward input end of the comparator U1 receives a second comparison voltage V2, and the output end of the comparator U is connected with the buffer U2 and is connected with a power supply end through a resistor R6; the voltage comparison circuit 3 compares the received first comparison voltage V1 with the second comparison voltage V2, and then sends a low or high level to control the buffer U2 to be turned off or on, so as to turn off or not turn off the output of the MOSFET gate driving signal.
The first comparison voltage V1 is generated by a voltage sampling circuit 2, and the voltage sampling circuit 2 is used for collecting source-drain voltages of MOSFETs connected in parallel and dividing the source-drain voltages to generate the first comparison voltage V1, and outputting the first comparison voltage V1 to the voltage comparison circuit 3.
Specifically, as shown in fig. 2, the voltage sampling circuit 2 includes a diode D1, a resistor R3, a first sampling resistor R1 and a second sampling resistor R2, wherein the cathode of the diode D1 is connected to the drain of each MOSFET, the anode of the diode D1 is connected to one end of the resistor R3, and the other end of the resistor R3 is connected to the output end of the driving circuit 1 and passes through the resistor R 7 ，R 8 -R N The anode of the diode D1 is also connected with one end of a first sampling resistor R1, the other end of the first sampling resistor R1 is connected with the reverse input end of a comparator U1 in the voltage comparison circuit 3 and one end of a second sampling resistor R2, and the other end of the second sampling resistor R2 is connected with the drain electrode of the MOSEFT.
The diode D1 is turned on when the MOSFET is turned on and turned off when the MOSFET is turned off, so that when the MOSFET is turned off, the voltage sampling circuit 2 is turned off reversely, and the first comparison voltage V1 is at zero level; the resistance of the resistor R3 is proportional to the driving voltage of the MOSFET, and preferably a larger resistor is used, so that the miller capacitance caused by the diode D1 can be reduced, and the current is absorbed from the driving signal as little as possible.
The voltage sampling circuit is different from the traditional current sensor sampling, and the circuit is based on the drain-source voltage V of the MOSFET DS With drain current I D Characteristic curve of change, generalOverdetection V DS To react corresponding I D As shown in fig. 2, when the MOSFET gate driving signal is high, the parallel MOS is turned on, V X =V D1 +V DS And the first comparison voltage v1=v X X R2/(r1+r2), it can be derived that:
the first comparison voltage V1 satisfies the following formula:
V1=（V DS +V D1 ）×R2/（R2+R1）
wherein V is DS Is MOSFET drain-source voltage, V D1 Is the diode forward turn-on voltage.
In specific application, after selecting the model of MOSFET, the drain-source voltage V can be found in the data manual DS With drain current I D A varying curve for calculating the drain current I based on the total output current and the number of MOSFETs D =total output current/number of parallel MOSFETs, find the I in the curve D V corresponding to drain current DS The values, then, the resistances of the first sampling resistor R1 and the second sampling resistor R2 are determined by the desired first comparison voltage V1 voltage, and as for the resistance of the resistor R3, the resistance thereof becomes larger as the MOSFET driving voltage increases.
Further, since the maximum currents that the MOSFETs can withstand at different temperatures have a difference, temperature compensation is required, and correspondingly, as shown in fig. 1 and fig. 2, the second comparison voltage V2 is generated by the temperature compensation circuit 4, and the temperature compensation circuit 4 collects the operation temperature of the MOSFETs and generates the second comparison voltage V2 to send to the voltage comparison circuit 3.
Specifically, the temperature compensation circuit 4 includes a third voltage dividing resistor R4 and a temperature sampling resistor R5, wherein one end of the third voltage dividing resistor R4 is connected to a power source terminal, the other end of the third voltage dividing resistor R4 is connected to one end of the temperature sampling resistor R5 and a positive input end of the comparator U1 in the voltage comparison circuit 3, and the other end of the temperature sampling resistor R5 is grounded.
The temperature sampling resistor R5 is preferably a negative temperature coefficient thermistor, that is, the resistance value thereof decreases with an increase in temperature, and is arranged at a position close to the MOSFET with an increase in temperature, and the temperature of the PCB in the vicinity of the MOSFET is sampled in real time by the bridge formed with the third voltage dividing resistor R4, thereby indirectly reflecting the case temperature of the MOSFET.
In addition, after the negative temperature coefficient thermistor is selected, the sensitivity of the temperature compensation can be adjusted by changing the resistance value of the third voltage dividing resistor R4, and when the resistance value of the third voltage dividing resistor R4 is closer to the variation range of the resistance value of the temperature sampling resistor R5, the sensitivity of the temperature compensation circuit 4 is higher.
In the overcurrent protection circuit of the present invention, in order to make the current change be the main factor, the temperature factor is only used as a fine compensation, so that the sensitivity of the temperature compensation circuit 4 should be kept low, that is, the blocking change amplitude of the temperature sampling resistor does not cause the second comparison voltage V2 to change greatly, correspondingly, the resistance value of the third voltage dividing resistor R4 is designed to be far from the resistance value change range of the temperature sampling resistor R5 so that the change amplitude of the second comparison voltage V2 calculated according to the following formula does not exceed the set value,
V2=VCC×R5/（R4+R5）
wherein VCC is the power supply terminal VCC input voltage.
When the whole MOSFET parallel overcurrent protection circuit works, the voltage sampling circuit 2 and the temperature compensation circuit 4 collect and output analog voltage signals to the comparator U1 in real time to generate comparison signals,
when the MOSFET drain current ID increases (the current output by the drive circuit increases) at a constant temperature, the drain-source voltage V DS The voltage of the first comparison voltage V1 increases correspondingly, at this time, the temperature is constant, so the second comparison voltage V2 remains unchanged, when the first comparison voltage V1 increases to be greater than the second comparison voltage V2, the output of the comparator U1 is at a low level, at this time, the buffer U2 is turned off, thereby cutting off the output of the MOSFET gate driving signal, and the parallel MOSFET is turned off for protection.
Under the condition of constant current, when the ambient temperature of the MOSFET rises, the resistance value of the negative temperature coefficient thermistor becomes smaller, correspondingly, the voltage of the second comparison voltage V2 is reduced, the first comparison voltage V1 is kept unchanged due to the constant current, when the second comparison voltage V2 is smaller than the first comparison voltage V1, the output of the comparator U1 is in a low level, at the moment, the buffer U2 is closed, so that the output of a MOSFET gate driving signal is cut off, and the parallel MOSFETs are turned off.
When the current output from the driving circuit becomes large and the temperature varies simultaneously, the comparator U1 outputs a high level as long as the first comparison voltage V1 does not exceed the second comparison voltage V2, and at this time, the buffer U2 is turned on, so that the output of the MOSFET gate driving signal is not turned off, and the parallel MOSFETs are turned on.
For the upper bridge circuit in the U-phase driving loop, the upper bridge circuit also has the functional modules and structures in the lower bridge circuit, and the difference is that: the principle of overcurrent protection of the drain electrode of each MOSFET in the upper bridge circuit is the same as that of the lower bridge circuit, and the drain electrode of each MOSFET is connected with the positive electrode DC+ of the direct current power supply, and the source electrode of each MOSFET is connected with the U-phase output end U of the alternating current motor, so that the description is omitted.
For the W phase and V phase of the ac motor, the same has various structures in the U-phase driving circuit and the working principles are similar, and are not described herein.
In other embodiments, the second comparison voltage V2 may be a preset reference voltage, and all technical solutions formed by equivalent transformation or equivalent transformation fall within the protection scope of the present invention.
Claims (6)
- The MOSFET parallel overcurrent protection circuit comprises a group of MOSFETs which are connected in parallel and a driving circuit (1) for driving the MOSFETs to work, and is characterized in that: the voltage sampling circuit (2) is used for collecting source-drain voltages of MOSFETs connected in parallel and generating a first comparison voltage (V1) to be output to the voltage comparison circuit (3), and the voltage comparison circuit (3) compares the first comparison voltage (V1) with a second comparison voltage (V2) and then outputs a low or high level to control the driving circuit (1) to turn off or not turn off the output of a MOSFET gate driving signal;the voltage sampling circuit (2) comprises a diode (D1), a resistor (R3), a first sampling resistor (R1) and a second sampling resistor (R2), wherein the cathode of the diode (D1) is connected with the drain electrode of each MOSFET, the anode of the diode (D1) is connected with one end of the resistor (R3), the other end of the resistor (R3) is connected with the output end of the driving circuit (1) and the grid electrode of each MOSEFT, the anode of the diode (D1) is also connected with one end of the first sampling resistor (R1), the other end of the first sampling resistor (R1) is connected with the reverse input end of the comparator (U1) in the voltage comparison circuit (3) and one end of the second sampling resistor (R2), the other end of the second sampling resistor (R2) is connected with the drain electrode of each MOSEFT,the first comparison voltage (V1) satisfies the following formula:V1=（V DS +V D1 ）×R2/（R2+R1）wherein V is DS Is MOSFET drain-source voltage, V D1 Is the diode forward turn-on voltage;the MOSFET parallel overcurrent protection circuit further comprises a temperature compensation circuit (4) which is used for collecting the operating temperature of the MOSFET and generating the second comparison voltage (V2); the temperature compensation circuit (4) comprises a third voltage dividing resistor (R4) and a temperature sampling resistor (R5), one end of the third voltage dividing resistor (R4) is connected with a power supply end, the other end of the third voltage dividing resistor is connected with one end of the temperature sampling resistor (R5) and the positive input end of a comparator (U1) in the voltage comparison circuit (3), and the other end of the temperature sampling resistor (R5) is grounded.
- 2. The MOSFET parallel overcurrent protection circuit of claim 1, wherein: the resistance value of the resistor (R3) is proportional to the drive voltage of the MOSFET.
- 3. The MOSFET parallel overcurrent protection circuit of claim 1, wherein: the temperature sampling resistor (R5) is a negative temperature coefficient thermistor.
- 4. The MOSFET parallel overcurrent protection circuit of claim 1, wherein: the temperature sampling resistor (R5) is arranged next to the MOSEFT.
- 5. The MOSFET parallel overcurrent protection circuit of claim 1, wherein: the resistance value of the third voltage dividing resistor (R4) is far from the resistance value change range of the temperature sampling resistor (R5) so that the change amplitude of the second comparison voltage (V2) calculated according to the following formula does not exceed a set value,V2=VCC×R5/（R4+R5）wherein VCC is a power supply terminal (VCC) input voltage.
- 6. The MOSFET parallel overcurrent protection circuit of any one of claims 1-5, wherein: the MOSFET parallel overcurrent protection circuit is at least applied to a driving circuit of a low-voltage high-power motor controller.
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| CN201710260603.9A CN106953624B (en) | 2017-04-20 | 2017-04-20 | MOSFET parallel overcurrent protection circuit |
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| CN111181128A (en) * | 2020-02-16 | 2020-05-19 | 苏州浪潮智能科技有限公司 | Protection circuit based on e-fuse chip |
| CN112858755B (en) * | 2021-01-14 | 2024-03-19 | 中微渝芯(重庆)电子科技有限公司 | Three-phase current sampling method and system |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102801294A (en) * | 2012-07-27 | 2012-11-28 | 北京市科通电子继电器总厂 | In-parallel sampling over-current protection circuit |
| CN102931630A (en) * | 2012-11-21 | 2013-02-13 | 重庆西南集成电路设计有限责任公司 | Overvoltage and overcurrent protection circuit with state holding function |
| CN104600677A (en) * | 2015-01-14 | 2015-05-06 | 常州格力博有限公司 | Short-circuit protection method for transistor in control circuit |
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2017
- 2017-04-20 CN CN201710260603.9A patent/CN106953624B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102801294A (en) * | 2012-07-27 | 2012-11-28 | 北京市科通电子继电器总厂 | In-parallel sampling over-current protection circuit |
| CN102931630A (en) * | 2012-11-21 | 2013-02-13 | 重庆西南集成电路设计有限责任公司 | Overvoltage and overcurrent protection circuit with state holding function |
| CN104600677A (en) * | 2015-01-14 | 2015-05-06 | 常州格力博有限公司 | Short-circuit protection method for transistor in control circuit |
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