CN105553313B - NPC type three-level inverter driving circuit and method with protection structure - Google Patents
NPC type three-level inverter driving circuit and method with protection structure Download PDFInfo
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- CN105553313B CN105553313B CN201610118976.8A CN201610118976A CN105553313B CN 105553313 B CN105553313 B CN 105553313B CN 201610118976 A CN201610118976 A CN 201610118976A CN 105553313 B CN105553313 B CN 105553313B
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- signal
- protection location
- pwm
- protection
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Classifications
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/483—Converters with outputs that each can have more than two voltages levels
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H7/00—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions
- H02H7/10—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for converters; for rectifiers
- H02H7/12—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for converters; for rectifiers for static converters or rectifiers
- H02H7/122—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for converters; for rectifiers for static converters or rectifiers for inverters, i.e. dc/ac converters
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Inverter Devices (AREA)
Abstract
The invention proposes a kind of methods and circuit that a kind of pwm signal detection and relay protective scheme can be sealed between the PWM of MCU output and the input of switching tube driver, to realize the straight-through protection to three level electricity inverter leg of NPC type.The present invention avoids the switching tube damaged condition that situations such as MCU firmware design defect, MCU hardware are unstable, pwm signal cabling is disturbed occurs after implementing, and the effect of MCU firmware and PLD hardware duplicate protection may be implemented.
Description
Technical field
The present invention relates to power electronics field more particularly to a kind of NPC type tri-level inversions with protection structure
Device driving circuit and method.
Background technique
Diode-clamped Three-level Inverter is also known as NPC (Neutral-Point-C1amped), is tri-level inversion
Develop earliest in device topological structure, and applies a kind of most common topological structure at present.Each phase is by 4 power devices in circuit
Part is in series, carries out level number required for driving exports by certain switching logic to 4 power tubes, synthesis is corresponding just
String waveform.Due to the functionality of its own, Diode-clamped Three-level Inverter is in technical field of electric power using very extensive.
Compared with the circuit structure of traditional two level, the circuit structure of three level is in addition to making single insulated gate bipolar crystal
Pipe IGBT (Insulated Gate Bipolar Transistor) or Metal-Oxide Semiconductor field effect transistor
Except MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) blocking voltage halves, also
, the loss advantages such as low, high-efficient small with harmonic wave.Therefore, the circuit is in the products such as photovoltaic, UPS and charging pile using especially
Extensively.
However, NPC type three-level inverter has strict demand for the sequence of movement of switching tube, it need to be first turned off outer tube, then
Inner tube is turned off, preventing busbar voltage to be added in causes to damage on outer tube.
General NPC type three-level inverter driving circuit is as shown in Figure 1, micro-control unit MCU
(Microcontroller Unit) sends pulse width and modulates (PWM:Pulse Width Modulation) signal, PWM letter
IGBT/MOSFET is directly driven after number driving transformation/isolation through overdrive circuit.It is asked if the software of MCU has been run out
The DC+ situation straight-through to DC- to GND, DC+ to GND, DC- will occur in the PWM drive signal of topic, the triode of Q1~Q4, these
It will lead to the damage of switching tube；In addition, also will appear above-mentioned bus if the signal of switching tube driving input terminal is interfered
At this moment straight-through situation also results in the damage of switching tube；Other than above situation, in the processes such as product development or debugging
In, especially software debugging when be also easy to appear the incorrect situation of switching tube timing, this also result in switching tube damage.
Summary of the invention
In order to overcome existing three level driving circuit of NPC type to be easy because certain reason leads to the incorrect damage of switching sequence
The case where switching tube, device of the present invention are a kind of NPC type three-level inverter driving circuit with protection structure, packet
It includes:
Micro-control unit MCU, for sending pulse width modulation (PWM) signal；
Protection location, for being detected from the received pwm signal of micro-control unit MCU and exported according to testing result
Logical signal；
Driving unit receives the logical signal from protection location, and is based on the logical signal output drive signal；
Receiving unit receives the driving signal from driving unit and completes switch motion based on the driving signal.
Wherein protection location is programmable logic device, and protection location may also include inductance overcurrent protection structure or bridge arm electricity
Flow overcurrent protection structure.If protection location receives the pwm signal for meeting switching sequence requirement, normal output pwm signal is given
Driving unit；If protection location receives the pwm signal for being unsatisfactory for switching sequence requirement, the logic of shutdown receiving unit is exported
Signal.It wherein can also increase the signal judgement for indicating electric voltage over press instruction in protection location, receiving unit is 4 power devices.
In addition the present invention also provides a kind of methods of protection diode Clamp three-level inverter driving circuit, including
Pulse width modulation (PWM) signal is sent to protection location by micro-control unit MCU；
Protection location detect and according to testing result to driving unit output logic signal to the pwm signal；
Driving unit issues the switch motion that driving signal controls and receives unit to receiving unit.
The present invention avoids the feelings such as MCU firmware design defect, MCU hardware are unstable, pwm signal cabling is disturbed after implementing
The switching tube damaged condition that condition occurs, may be implemented the effect of MCU firmware and PLD hardware duplicate protection.
Detailed description of the invention
Fig. 1 is conventional NPC type three-level inverter driving circuit；
Fig. 2 is NPC type three-level inverter driving circuit according to one embodiment of the present invention；
Fig. 3 is the relay protective scheme truth table of PLD device；
Fig. 4 is the relay protective scheme truth table for increasing the PLD device of OVP input variable.
Specific embodiment
Detailed description of the present invention embodiment with reference to the accompanying drawing.
The invention proposes a kind of NPC type three-level inverter driving circuits with protection structure, can be MCU's
A kind of detection of pwm signal and relay protective scheme structure are sealed between PWM output and the input of switching tube driver, to realize to NPC
The straight-through protection of three level electricity inverter leg of type.
Circuit diagram of the invention is as shown in Fig. 2, PLD device seals in the PWM output and driver signal input of MCU
End achievees the purpose that protect receiving unit Q1~Q4 to PLD device write protection logic.
The relay protective scheme truth table of PLD device is as shown in figure 3, wherein PWMa~PWMd is PLD device input signal, PWM1
~PWM4 is PLD device output signal.
The principle of relay protective scheme design is as follows:
1) meeting NPC type three-level inverter circuit switching sequence requirement pwm signal can normally export；
2) occur being unsatisfactory for NPC type three-level inverter circuit switching sequence requirement pwm signal, PLD turns off Q1~Q4；
3) relay protective scheme can extend, for example, increasing inductance overcurrent protection, bridge arm current overcurrent protection etc..
The safeguard rule that Fig. 3 is provided is a kind of concrete application, can adjust safeguard rule according to the actual application.
Accordingly, the invention also provides a kind of methods of protection diode Clamp three-level inverter driving circuit, lead to
It crosses micro-control unit MCU transmission pulse width modulation (PWM) signal and gives protection location PLD device；PLD examines the pwm signal
It surveys and according to testing result to driving unit output logic signal；Driving unit issues driving signal control to receiving unit Q1~Q4
The switch of receiving unit processed.
The present invention is implemented in DC charging module product, and specific safeguard rule as shown in figure 4, increase in practical applications
OVP input variable, the input variable is as DC+ DC- electric voltage over press indication signal, and OVP is 1 when bus overvoltage.In addition,
It is deleted in this application
[PWMa, PWMb, PWMc, PWMd]=[0,1,1,0] and
[PWMa, PWMb, PWMc, PWMd]=[0,0,1,0]
Two switching tube action timing because do not use this two groups of PWM switch combinations in this application drive Q1~
Q4 switching tube.
, can also be there are many logical combination mode according to practical application, those skilled in the art can be proposed according to the present invention
Design principle combination actual circuit need to carry out interrelated logic design.
Above embodiment, which is merely exemplary, shows the present invention, is not intended to the limitation present invention.In addition for not detailed
The step of thin description, belongs to technology contents well known to those skilled in the art.For covering the corresponding change in present inventive concept
It changes and changes within the scope of the present invention.
Claims (10)
1. a kind of Diode-clamped Three-level Inverter driving circuit, comprising:
Micro-control unit MCU, for sending pulse width modulation (PWM) signal, the pwm signal includes PWMa, PWMb, PWMc,
PWMd；
Protection location, for being detected from the received pwm signal of micro-control unit MCU and export logic according to testing result
Signal, output logic signal include: PWM1, PWM2, PWM3, PWM4, and wherein protection location is PLD device；Driving unit receives
Logical signal from protection location, and it is based on the logical signal output drive signal；
Receiving unit receives the driving signal from driving unit and completes switch motion based on the driving signal,
Wherein, the relay protective scheme true value of PLD device is as shown above.
2. Diode-clamped Three-level Inverter driving circuit according to claim 1, wherein protection location can also be wrapped
Include inductance overcurrent protection structure or bridge arm current overcurrent protection structure.
3. Diode-clamped Three-level Inverter driving circuit according to claim 1, if wherein protection location receives
To the pwm signal for meeting switching sequence requirement, then normal output pwm signal is to driving unit；If protection location receives discontented
The pwm signal that sufficient switching sequence requires then exports the logical signal of shutdown receiving unit.
4. Diode-clamped Three-level Inverter driving circuit according to claim 3, wherein may be used also in protection location
Increase the signal judgement for indicating electric voltage over press instruction.
5. Diode-clamped Three-level Inverter driving circuit according to claim 1, wherein receiving unit is 4 function
Rate device.
6. a kind of method of protection diode Clamp three-level inverter driving circuit, including
Pulse width modulation (PWM) signal is sent to protection location by micro-control unit MCU, the pwm signal includes PWMa,
PWMb, PWMc, PWMd；
Protection location detect and according to testing result to driving unit output logic signal, output logic to the pwm signal
Signal includes: PWM1, PWM2, PWM3, PWM4, and wherein protection location is PLD device；
Driving unit issues the switch motion that driving signal controls and receives unit to receiving unit,
Wherein, the relay protective scheme true value of PLD device is as shown above.
7. according to the method described in claim 6, wherein protection location may also include inductance overcurrent protection structure or bridge arm current
Overcurrent protection structure.
8. according to the method described in claim 6, wherein if protection location receives the pwm signal for meeting switching sequence requirement,
Then normal output pwm signal is to driving unit；If protection location receives the pwm signal for being unsatisfactory for switching sequence requirement, defeated
The logical signal of receiving unit is turned off out.
9. according to the method described in claim 6, wherein can also increase in protection location indicates that the signal of electric voltage over press instruction is sentenced
It is disconnected.
10. according to the method described in claim 9, wherein receiving unit is 4 power devices.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610118976.8A CN105553313B (en) | 2016-03-02 | 2016-03-02 | NPC type three-level inverter driving circuit and method with protection structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610118976.8A CN105553313B (en) | 2016-03-02 | 2016-03-02 | NPC type three-level inverter driving circuit and method with protection structure |
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| CN105553313A CN105553313A (en) | 2016-05-04 |
| CN105553313B true CN105553313B (en) | 2019-03-01 |
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| CN201610118976.8A Active CN105553313B (en) | 2016-03-02 | 2016-03-02 | NPC type three-level inverter driving circuit and method with protection structure |
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Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108646165B (en) * | 2018-04-12 | 2019-03-29 | 武汉能研电气有限公司 | A kind of method, system and controller improving Technics of Power Electronic Conversion equipment safety |
| CN110365196A (en) * | 2019-07-23 | 2019-10-22 | 中车青岛四方车辆研究所有限公司 | Three level integral type SiC-Mosfet drive systems and drive control method |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05146161A (en) * | 1991-11-19 | 1993-06-11 | Hitachi Ltd | Pwm converter |
| CN1153342C (en) * | 2002-06-07 | 2004-06-09 | 清华大学 | Bridge arm through protecting system for 6KV three-level integrated gate phase-changing thyristor inverter |
| CN100391075C (en) * | 2005-09-02 | 2008-05-28 | 清华大学 | Safety sealing impulse method of medium-high voltage three-level converter based on IGCT |
| CN101242136B (en) * | 2008-02-03 | 2011-12-28 | 天津电气传动设计研究所 | Voltage source frequency converter bridge arm direct pass protector for three level integrated gate pole conversion transistor |
| CN104753321B (en) * | 2015-03-12 | 2017-04-26 | 北京天诚同创电气有限公司 | Driving method for diode clamping type three-level bridge arm and bridge arm logic unit |
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