CN106941033B - Chip-R element and Chip-R component element - Google Patents
Chip-R element and Chip-R component element Download PDFInfo
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- CN106941033B CN106941033B CN201610878676.XA CN201610878676A CN106941033B CN 106941033 B CN106941033 B CN 106941033B CN 201610878676 A CN201610878676 A CN 201610878676A CN 106941033 B CN106941033 B CN 106941033B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C1/00—Details
- H01C1/01—Mounting; Supporting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C1/00—Details
- H01C1/14—Terminals or tapping points or electrodes specially adapted for resistors; Arrangements of terminals or tapping points or electrodes on resistors
- H01C1/148—Terminals or tapping points or electrodes specially adapted for resistors; Arrangements of terminals or tapping points or electrodes on resistors the terminals embracing or surrounding the resistive element
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Abstract
The present invention provides a kind of Chip-R element and Chip-R component element.An implementation form of the invention provides following Chip-R element, it include: insulating substrate, with the first face and the second face that are located at mutual opposite side and the side between first face and the second face, and the slot formed along first face to second face is equipped in the side；Resistive layer is arranged in the first face of the insulating substrate；First terminal and Second terminal, are arranged in two ends of the insulating substrate, and are connected to the two sides of the resistive layer；And third terminal, the first face of the insulating substrate is arranged between the first terminal and Second terminal, and there is the part extended along the slot.
Description
Technical field
The present invention relates to Chip-R element and Chip-R component elements.
Background technique
Chip-R element is the chip component for realizing precision resistance, and function is, is adjusted in electronic circuit
Electric current, and reduce voltage.
In the circuit design using resistance, if resistance is by caused by external impact (surge (Surge), electrostatic etc.)
It damages and bad (for example, short circuit) occurs, then all electric currents of power supply all flow into integrated circuit (IC), so as to send out in IC
Raw serious secondary damage.
It is bad to prevent these, multiple resistance can be used when designing circuit.But this circuit design will not
Increase the space usage amount of circuit substrate avoidablely.
In particular, to gradually miniaturization and precise treatment mobile device the case where for, in order to ensure the stabilization of foregoing circuit
Property and so that the space usage amount of circuit substrate is become excessively high be worthless, it is therefore desirable to studying one kind can more effectively adjust
The Chip-R element of current.
[existing technical literature]
[patent document]
(patent document 1) United States Patent Publication 2008/0303627
Summary of the invention
Even if an implementation form of the invention be designed to provide it is a kind of be miniaturized, can also guarantee and circuit substrate
Stable connection Chip-R element and Chip-R element component.
An implementation form of the invention provides a kind of Chip-R element, comprising: insulating substrate has positioned at opposite each other
Position the first face and the second face and the side between first face and the second face, and be equipped with edge in the side
The slot formed from first face to the direction in second face；Resistive layer is arranged in the first face of the insulating substrate；
First terminal and Second terminal, are arranged in two ends of the insulating substrate, and are connected to the two of the resistive layer
Side；And third terminal, the first face of the insulating substrate is arranged between the first terminal and Second terminal, and have
There is the part extended along the slot.
In one example, the slot, which may include, is arranged in two of the mutual opposite side positioned at the insulating substrate
Two slots of side, and the part of the extension of the third terminal can be arranged in described two slots.
In one example, the part of the extension of the third terminal can have corresponding with the surface shape of the slot recessed
Shape.
In one example, in the first face of the insulating substrate, the third terminal can have than the first terminal with
And the thinner thickness of Second terminal.
An implementation form of the invention provides a kind of Chip-R element, comprising: insulating substrate has and is located at mutual phase
The first face and the second face tossed about and there is side between the first face and the second face；Resistive layer is arranged in described exhausted
First face of edge substrate；First terminal and Second terminal, are arranged in two ends of the insulating substrate, and are connected to institute
State the two sides of resistive layer；And third terminal, the insulating substrate is arranged between the first terminal and Second terminal
First face, the insulating substrate include through hole, and the through hole connects the third terminal to the second face and the third
The part that terminal extends with the interior surface along the through hole, to maintain the empty space of the inside through holes.
An implementation form of the invention provides a kind of Chip-R component element, comprising: insulating substrate has and is located at each other
Opposite side the first face and the second face and positioned at first face and the second face side, and there is edge in the side
The slot formed from first face to second face；Resistive layer is arranged in the first face of the insulating substrate；First end
Son and Second terminal, are arranged in two ends of the insulating substrate, and be connected to the both ends of the resistive layer；And the
Three terminals are arranged in the first face of the insulating substrate between the first terminal and Second terminal and have along the slot
And the part extended, the first of the Chip-R element is electrically connected to by bonding with metal the multiple to third terminal
Electrode plate.
It in one example, can be from the electrode plate for connecting the bonding metal of the third terminal and the electrode plate
It is arranged along the part of the extension of the third terminal.
Extended and making the center terminal between other terminals along the groove portion for being formed in element side, thus both
It can prevent from occurring due to solder bad in solder reflow process, the fixation that can also be improved Chip-R element is strong
Degree.
Multiplicity of the invention and beneficial advantage and effect are not limited to above-mentioned content, can be to of the invention
Specific implementation is easier to understand during being illustrated.
Detailed description of the invention
Fig. 1 is the perspective view for showing the Chip-R element of an implementation form according to the present invention.
Fig. 2 is the sectional side view of the I-I' interception along the Chip-R element for being illustrated in Fig. 1 and observation.
Fig. 3 is to show the Chip-R component element with the substrate for being pasted with the Chip-R element for being illustrated in Fig. 1
Perspective view.
Fig. 4 is the perspective view for showing the Chip-R element of an implementation form according to the present invention.
Fig. 5 is the sectional side view of II-II ' the interception along the Chip-R element for being illustrated in Fig. 4 and observation.
Fig. 6 is the sectional side view for showing the Chip-R element of implementation form of multiplicity according to the present invention.
Fig. 7 is the perspective view for showing the Chip-R element of an implementation form according to the present invention.
Fig. 8 is the perspective view for showing the Chip-R element of an implementation form according to the present invention.
Fig. 9 is the sectional side view of III-III ' the line interception along the Chip-R element for being illustrated in Fig. 8 and observation.
Symbol description
100,100', 100 ", 200,200': Chip-R element
110,110', 210: insulating substrate
G: slot
H: through hole
120,220,221,222: resistive layer
131,132,133 and 231,232,233: the first to third terminal
140,240: resistor protective layer
11: circuit substrate
12,13,14: the first to third electrode plate
15: solder
Specific embodiment
Hereinafter, being illustrated referring to implementation form of the attached drawing to multiplicity of the invention.
The feature that implementation form of the invention can be deformed into other forms or a variety of implementation forms can group each other
It closes.Even if the item illustrated in an implementation form is not illustrated in another implementation form, as long as in another implementation form
There is no in contrast or contradictory explanation, the explanation of another implementation form can be combined into.
Shape and size of element in appended attached drawing etc. can be exaggerated, Er Qie for more specific explanation
Same or similar element is construed as with the element that identical symbol indicates in attached drawing.In addition, in the description, " on
The terms such as portion ", " above ", " lower part ", " following ", " side " indicate in the direction of attached drawing as benchmark, in fact, may
Become different according to the arranged direction of element.
Fig. 1 is the perspective view for showing the Chip-R element of an implementation form according to the present invention；Fig. 2 is along being illustrated in
The I-I' of the resistive element of Fig. 1 is intercepted and the sectional side view of observation.
Referring to Fig.1 and Fig. 2, insulating substrate 110, electricity may include according to the Chip-R element 100 of this implementation form
Resistance layer 120 and the first of the resistive layer 120 is connected to third terminal 131,132,133.
The insulating substrate 110 includes the resistive layer 120 for being arranged in its one side.The insulating substrate 110 supports relatively thin
Resistive layer 120, and may insure the intensity of resistive element 100.The insulating substrate 110 can be the excellent material of heating conduction
Matter.The insulating substrate 110 can effectively discharge the heat generated in use process from resistive layer 120 to outside.
For example, the insulating substrate 110 can be such as aluminium oxide (Al2O3) etc ceramics or polymeric substrate.In spy
In usual practice, the insulating substrate 110 can be anodic oxidation (anodizing) processing carried out to the surface of the aluminium of thin sheet form and
Obtained aluminum oxide substrate.
The resistive layer 120 is arranged in the one side of the insulating substrate 110.The resistive layer 120 can be isolated from each other
First to third terminal 131,132,133 connect and be used as two resistance elements.As shown in Figure 1, the first terminal 131
And Second terminal 132 is arranged in two ends of the insulating substrate 110, and may be coupled to the two of the resistive layer 120
Side.The third terminal 133 can discretely be arranged in the first end with the first terminal 131 and Second terminal 132
On resistive layer 120 between son 131 and Second terminal 132.
In such arrangement, it may be implemented the third terminal 133 as public terminal and by the first terminal
And Second terminal 131,132 is adopted as two resistance elements of respective independent terminals.
Differently with the present embodiment, resistive layer 120 can be separated from each other as two resistance elements and be provided (referring to figure
6)。
As the resistive layer 120, the compounds such as metal, alloy or the oxide of multiplicity can be used.For example, can be with
Include at least one of Cu-Ni system alloy, Ni-Cr system alloy, Ru oxide, Si oxide, Mn and Mn system alloy.
The resistance value of the resistive layer 120 can be determined by resistance trimming (trimming).So-called resistance trimming refers in shape
At after the resistive layer 120 in order to obtain circuit design when required resistance value and such as fine cutting that carries out
(cutting) sector of breakdown removal technique.
As shown in Figure 1, being formed with slot G in the side of the insulating substrate 110.Be formed with the slot G side be located at
The vertical direction of the orientation of the first terminal 131 and Second terminal 132.Two slot G are used in this embodiment,
And it can be respectively arranged in described two sides.
The slot G can be arranged in a manner of connecting with the third terminal 133.The slot G is along described from being disposed with
The face (referred to as " the first face ") of resistive layer 120 is arrived to be formed positioned at the face (referred to as " the second face ") of its opposition side.Although simultaneously
It is not limited to this, but the shape for being used in the section observation from horizontal direction of the slot G of this implementation form can be semicircle
Shape.
In this embodiment, the third terminal 133 has the part extended along the slot G.Specifically, such as
Shown in Fig. 1, the third terminal 133 can form slot G in the side of the insulating substrate 110.The third terminal 133 is prolonged
The part stretched can have recessed shape corresponding with the surface shape of the slot G.
As described in Figure 2, described first to third terminal 131,132,133 respectively include internal electrode 131a-131a ",
External electrode 131b, 132b, 133b of 132a-132a ", 133a and the covering internal electrode.The internal electrode includes cloth
The upper surface of it is placed on the resistive layer 120 electrode 131a, 132a, 133a.The first terminal 131 and Second terminal 132
Internal electrode also has the side for two sides for being formed in the insulating substrate 110 other than overlying electrode 131a, 132a
Electrode 131a', 132a' and rear electrode 131a ", 132a " positioned at the second face of the reverse side as the first face.Although described
The internal electrode of three terminals 133 is also not shown, but the side for having the slot along the side of the insulating substrate 110 and being formed
Electrode (not shown).
The internal electrode can pass through the printing technology (being fired after printing) or depositing operation using electrocondution slurry
And it is formed.The internal electrode can serve as seed in the metal plating process for external electrode 131b, 132b, 133b
(seed) effect.For example, the internal electrode can wrap argentiferous (Ag), copper (Cu), nickel (Ni), at least one in platinum (Pt)
It is a.
Described first to external electrode 131b, 132b, 133b of third terminal can be formed by metal plating process.
Described external electrode 131b, 132b, 133b can wrap at least one of nickeliferous (Ni), tin (Sn), lead (Pd), chromium (Cr).Example
Such as, described external electrode 131b, 132b, 133b can be the bilayer with nickel coating and tin coating.In nickel coating can prevent
The ingredient (for example, Ag) of portion's electrode leaches (leaching) to solder compositions during mount components, and tin coating can
With in order to can be more easily provided in conjunction with solder compositions in mount components.
The external electrode 133b of the third terminal can be formed along the side electrode for being formed in the surface the slot G.
The external electrode 133b that can easily engage with solder is formed in side electrode, therefore, is such as illustrated in Figure 3, in attachment,
Solder can be moved up along the extension of the third terminal 133 positioned at slot G.
In the present embodiment, it can be disposed on the surface of the resistive layer 120: resistor protective layer 140, for preventing
It states resistive layer 120 and exposes or protect from external impact the resistive layer 120 to outside.For example, the resistor protective layer 140
It can wrap siliceous oxide (SiO2), glass (glass) or polymer.In particular case, the resistor protective layer 140 can
To be made of the second layer of the first layer of glass material and polymerizable material, and according to demand, two layer can exist respectively
The front and back of resistance trimming process is formed.
The extension of the third terminal formed along the slot G can arrive returning for circuit substrate for mounting
The path for keeping excessive solder mobile is provided in stream welding procedure.This effect is referred to Fig. 3 and is described in detail.Figure
3 be the perspective view for showing the Chip-R component element with the circuit substrate for being pasted with the Chip-R element for being illustrated in Fig. 1.
Chip-R component element 10 shown in Fig. 3 includes Chip-R element 100 as shown in Figure 1 and is pasted with described
The circuit substrate 11 of Chip-R element 100.
The circuit substrate 11 includes first to third electrode plate 12,13,14 in component mounter region.The electrode plate
12,13, the 14 pad figure for referring to the circuit pattern for being connected to and being embodied in the circuit substrate 11, and being provided for mount components
Case (land pattern).
As described above, the terminal spacing of Chip-R element 100 is with patch in order to improve the space efficiency of circuit substrate 11
The miniaturization of sheet resistance element 100 and narrow, therefore, when carrying out solder reflow process, may be exposed to solder 15 diffusion
The problem of.In particular, master may be become by being applied to the solder 15 for the third terminal 133 being arranged between other terminals 131,132
The problem of wanting.
However, in this embodiment, even if using excessive solder 15, remaining solder may also can be as shown in " A "
Ground rises along the part of the extension of the third terminal 133 positioned at groove portion G, therefore, can be effectively prevented to being not intended to expand
Scattered direction (other terminal directions) diffusion.
In addition, not only limiting the interval of terminal according to the requirement of above-mentioned miniaturization, also significantly limiting its width.
In particular, different from first terminal 131 and Second terminal 132, third terminal 133 is only provided in the one side of insulating substrate 110, because
This, the fixing intensity between circuit substrate 11 is lower, and due to mechanical shock, it is understood that there may be element 100 easily divides
From the problem of.But in the present embodiment, the part positioned at the extension of the third terminal 133 of groove portion G is as additional contact surface
It accumulates and is provided, therefore the fragile fixing intensity in the third terminal 133 can be adequately compensated for, as a result, it is possible to
Ensure the stable connection between Chip-R element 100 and circuit substrate 11.
Chip-R element according to the present invention can be altered to the form of multiplicity and realize.For example, the knot of third terminal
The structure of structure or other Chip-R elements may be changed, as long as and using can be with the spy between other terminals
Fixed terminal connection and the structure for moving solder along vertically upward direction, can be considered as being included in technology of the invention
In range.Fig. 4 and Fig. 5 is an implementation form of the invention, indicates the Chip-R of the third terminal using another structure
Element.
Fig. 4 is the perspective view for showing the Chip-R element of an implementation form according to the present invention；Fig. 5 is along being illustrated in
The II-II ' of the Chip-R element of Fig. 4 intercepts and the sectional side view of observation.
Referring to Fig. 4 and Fig. 5, similarly wrapped according to the Chip-R element 200 of this implementation form with a upper implementation form
Containing insulating substrate 210, resistive layer 220 and the first of the resistive layer 220 is connected to third terminal 231,232,233.
The insulating substrate 210 includes the resistive layer 120 for being arranged in its one side.The insulating substrate 210 for example can be with
It is such as aluminium oxide Al2O3Etc ceramics or polymeric substrate.
The resistive layer 220 is arranged in the one side of the insulating substrate 210.The resistive layer 220 can be isolated from each other
First to third terminal 231,232,233 connect and used as two resistance elements.
It is similar with above-mentioned implementation form according to the Chip-R element 200 of this implementation form, it can realize as follows:
With by third terminal 233 as public terminal and using first terminal 231 and Second terminal 232 as independent terminals
And the two resistance elements used.
Specifically, as shown in figure 4, the first terminal 231 and Second terminal 232 can be arranged in the insulation base
Two ends of plate 210 and the two sides for being connected to the resistive layer 220.The third terminal 233 can be with the first terminal
231 and Second terminal 232 be discretely arranged in the resistive layer 220 between the first terminal 231 and Second terminal 232
On.As the material of the resistive layer 220, the compounds such as metal or alloy, the oxide of multiplicity can be used.
As shown in figure 4, similarly with a upper implementation form, in facing with each other two side of the insulating substrate 210
Along vertical direction formation, there are two slot G.The slot G can be arranged in a manner of connecting with the third terminal 133.
In this embodiment, the third terminal 233 has the part extended along the slot G, and can be with volume
Other places extends to the second face of the insulating substrate 210.In the part of the extension of the third terminal 233, it is formed in side
Part can have recessed shape corresponding with the surface shape of the slot G.
As described in Figure 5, described first to third terminal 231,232,233 respectively include internal electrode 231a-231a ",
232a-232a ", 233a, 233a " and external electrode 231b, 232b, the 233b for covering the internal electrode.Described first to
The internal electrode of three terminals 231,232,233 is in addition to the upper surface of being arranged on the resistive layer 220 electrode 231a, 232a, 233a
Also there is side electrode 231a', the 232a' for two sides for being formed in the insulating substrate 210 in addition and be located at as first
The rear electrode 231a ", 232a " in the second face of the reverse side in face.Here, although being not shown relevant to the third terminal 233
Side electrode, but it is formed along the slot for being formed in other two sides.
The internal electrode 231a-231a ", 232a-232a ", 233a, 233a " can pass through the print using electrocondution slurry
Dataller's skill or depositing operation and formed.For example, the internal electrode can wrap argentiferous (Ag), copper (Cu), nickel (Ni), platinum
At least one of (Pt).
External electrode can be respectively formed on described first to third terminal 231,232,233 internal electrode
231b,232b,233b.For example, described external electrode 231b, 232b, 233b can wrap nickeliferous (Ni), tin (Sn), lead (Pd), chromium
At least one of (Cr).
In this embodiment, the external electrode 233b of the third terminal can have less than other external electrodes
The thickness t3 of thickness t1, t2 of 231b, 232b.Due to this thickness difference, it is used in the solder of identical or similar amount
When to each terminal 231,232,233, solder can be effectively prevented the phenomenon that the third terminal 233 is spread.
Described external electrode 231b, 232b, 233b can be formed by metal plating process.In this metal deposition work
In skill, first terminal 231 and Second terminal 232 are located at the marginal position of Chip-R element 200, on the contrary, third terminal 233
Between first terminal 231 and Second terminal 232, therefore, compared to the region of third terminal 233, metal deposition substance can
It is preferably deposited with the region in first terminal 231 and Second terminal 232.As a result, such as this implementation form, third end
The external electrode 233b of son can be formed as the thickness t3 thinner than thickness t1, t2 of other external electrodes 231b, 232b.
Accordingly, in this embodiment, together with the structure of slot G, third terminal 233 is made to form relatively thin thickness,
The engagement occurred so as to the diffusion etc. for more effectively solving the problems, such as solder in attachment is bad.
The present invention can also be efficiently with the Chip-R element for arriving other structures.Fig. 6 is an implementation shape of the invention
The sectional side view of state indicates the Chip-R element with multiple resistive layers of separation.
For the Chip-R element 200' for being illustrated in Fig. 6, in addition to having, there are two resistive layer 221,222, whole classes
It is similar to the illustrated Chip-R element 200 of Fig. 4 and Fig. 5.In addition, unless there are special opposite explanation, this implementation form
Constituent element is referred to and is directed to the same or similar constituent element of Chip-R element 200 for being illustrated in Fig. 4 and Fig. 5
Illustrate and is understood.
In this embodiment, the resistor body for being arranged in the one side of the insulating substrate 210 may be provided as to be divided each other
From two resistive layers 221,222.In connection with this, internal electrode 233a', 233a " of third terminal 233 can be arranged in two
Between a resistive layer 221,222.According to this connection type, can have identical with the Chip-R element of Fig. 5 is illustrated in
Circuit is constituted.
It, can be with figure according to the Chip-R element 200' of this implementation form although not showing in this embodiment
It is shown in the third terminal 233 that the Chip-R element 200 of Fig. 4 similarly has slot G and extends from the surface of slot G, so as to
To prevent the diffusion of solder in attachment, and improve the fixing intensity with circuit substrate.
Fig. 7 is the perspective view for showing the Chip-R element of an implementation form according to the present invention.
For the Chip-R element 100' for being illustrated in Fig. 7, in addition to the shape of slot is quadrangle, it is generally similar to figure
The illustrated Chip-R element 100 of 1 and Fig. 2.In addition, unless there are special opposite explanation, the composition of this implementation form is wanted
Element be referred to for be illustrated in Fig. 1 and Fig. 2 the same or similar constituent element of Chip-R element 100 explanation and
It is understood.
In this embodiment, the slot for being formed in the side of the insulating substrate 110 can be mentioned with the shape of quadrangle
For.Third terminal 133' can also extend along the slot of this shape for forming angle, and the extension of the third terminal 133'
Part can with correspond to slot shape and maintain space.This space formed due to slot G be can use to prevent from pasting
The diffusion of solder when dress, and the fixing intensity between circuit substrate can be improved.The shape of slot G is not limited to semicircle
Or quadrangle, it may be formed as the shape of multiplicity in addition to this.
The slot for being provided in the side of insulating substrate is illustrated only in above-mentioned implementation form, however can also be provided as can
The structure (for example, through hole) that can be used in the path for increase vertically solder is provided.This implementation form be illustrated in Fig. 8 and
Fig. 9.
Fig. 8 is the perspective view for showing the Chip-R element of an implementation form according to the present invention；Fig. 9 is along being illustrated in
III-III ' line of the Chip-R element of Fig. 8 intercepts and the sectional side view of observation.
To the Chip-R element 100 for being illustrated in Fig. 8 " for, it is formed in addition to through hole H replaces the slot of side, it can be with
Be interpreted as on the whole be illustrated in it is similar in the Chip-R element 100 of Fig. 1 and Fig. 2.In addition, being said unless there are special opposite
It is bright, the constituent element of this implementation form be referred to for be illustrated in the Chip-R element 100 of Fig. 1 and Fig. 2 it is identical or
It is similarly comprised the explanation of element and is understood.
The insulating substrate 110' for being used in this implementation form has the through hole H for connecting in the first face with the second face, and
Third terminal 133 " can extend along the interior surface of the through hole H and be formed.This third terminal 133 " extension
Part can be formed in a manner of ensuring space, so that through hole H is not embedded in, and accommodate the solder used when attachment.
As shown in figure 9, third terminal 133 " segment internal electrode 133a' can be arranged in the insulating substrate 110'
The first face the resistive layer 120 on, and other internal electrodes 133a " can extend and be arranged in the through hole H's
Interior surface.The external electrode 133b' of the third terminal can along described internal electrode 133a', 133a " and from it is described absolutely
The a part in the first face of edge substrate 110' extends to the interior surface of the through hole H and is formed.In this embodiment, scheme
It is shown as the third terminal 133 " it is formed in the whole interior surface of the through hole H, however in certain embodiments, it can
Only to provide the third terminal 133 " in a part.For example, when carrying out metal plating process, the external electrical of over-plating
Pole 133b' can be provided to the partial region adjacent with first face in the interior surface of the through hole.
In this embodiment, excessive solder can be accommodated along the emptying aperture of through hole H, it therefore, both can be more
Solder is effectively prevented to being not intended to the direction of diffusion to spread, and the fixing intensity with circuit substrate can be improved.
More than, implementation form of the invention is described in detail, but interest field of the invention is not limited to
In this, in this field with general knowledge per capita it is understood that the technology of the invention recorded in not departing from claims
The modification and deformation of multiplicity may be implemented in the range of item.
Claims (10)
1. a kind of Chip-R element, comprising:
Insulating substrate has positioned at the first face of reciprocal position and the second face and is located at first face and the second face
Between side, and be equipped in the side along the slot that is formed from first face to the direction in second face；
Resistive layer is arranged in the first face of the insulating substrate；
First terminal and Second terminal, are arranged in two ends of the insulating substrate, and are connected to the resistive layer
Two sides；And
Third terminal, is arranged in the first face of the insulating substrate between the first terminal and Second terminal, and has
The part extended along the slot,
The first terminal to third terminal respectively includes the internal electrode being arranged on the resistive layer and covers the inside
The external electrode of electrode,
In the first face of the insulating substrate, the external electrode of the third terminal has than the first terminal and second end
The thinner thickness of the external electrode of son.
2. Chip-R element as described in claim 1, wherein
The slot includes two slots for being arranged in two sides of the mutual opposite side positioned at the insulating substrate, and
The part of the extension of the third terminal is arranged in described two slots.
3. Chip-R element as described in claim 1, wherein
The third terminal extends to the second face of the insulating substrate and arranges.
4. Chip-R element as described in claim 1, wherein
The part of the extension of the third terminal has recessed shape corresponding with the surface shape of the slot.
5. Chip-R element as described in claim 1, wherein
The resistive layer includes the first resistor layer and that the first face of the insulating substrate is arranged in a manner of being separated from each other
Two resistive layers,
And the third terminal is arranged in described first in a manner of connecting with the first resistor layer and second resistance layer
Between resistive layer and second resistance layer.
6. Chip-R element as described in claim 1, wherein
The shape of the slot from the section of the horizontal direction of the slot is semicircle or quadrangle.
7. a kind of Chip-R element, comprising:
Insulating substrate, with positioned at the first face of mutual opposite side and the second face and between the first face and the second face
With side；
Resistive layer is arranged in the first face of the insulating substrate；
First terminal and Second terminal, are arranged in two ends of the insulating substrate, and are connected to the resistive layer
Two sides；And
Third terminal is arranged in the first face of the insulating substrate between the first terminal and Second terminal,
The insulating substrate includes through hole, the through hole connection third terminal to the second face, and the third end
The part that son extends with the interior surface along the through hole, to maintain the empty space of the inside through holes.
8. Chip-R element as claimed in claim 7, wherein
The third terminal extends to the second face of the insulating substrate.
9. a kind of Chip-R component element, comprising:
Circuit substrate has multiple electrodes plate；And
Chip-R element is arranged in the circuit substrate,
The Chip-R element includes: insulating substrate, is had positioned at the first face of mutual opposite side and the second face and position
In first face and the second face side, and have in the side along the shape from first face to second face
At slot；Resistive layer is arranged in the first face of the insulating substrate；First terminal and Second terminal are arranged in the insulation base
Two ends of plate, and it is connected to the both ends of the resistive layer；And third terminal, in the first terminal and second end
It is arranged in the first face of the insulating substrate between son and there is the part extended along the slot,
The first terminal to third terminal respectively includes the internal electrode being arranged on the resistive layer and covers the inside
The external electrode of electrode,
In the first face of the insulating substrate, the external electrode of the third terminal has than the first terminal and second end
The thinner thickness of the external electrode of son,
The first of the Chip-R element is electrically connected to the multiple electrode plate with metal by bonding to third terminal.
10. Chip-R component element as claimed in claim 9, wherein
For connecting the bonding metal of the third terminal and the electrode plate from the electrode plate along the third terminal
Extension part and arrange.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020160000523A KR101883038B1 (en) | 2016-01-04 | 2016-01-04 | Chip resistor and chip resistor assembly |
| KR10-2016-0000523 | 2016-01-04 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106941033A CN106941033A (en) | 2017-07-11 |
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| KR (1) | KR101883038B1 (en) |
| CN (1) | CN106941033B (en) |
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| KR102527724B1 (en) | 2016-11-15 | 2023-05-02 | 삼성전기주식회사 | Chip resistor and chip resistor assembly |
| US11802076B2 (en) | 2020-07-22 | 2023-10-31 | Changxin Memory Technologies, Inc. | Lead-free glass paste, chip resistor and method for producing same |
| CN113969104B (en) * | 2020-07-22 | 2023-05-23 | 长鑫存储技术有限公司 | Leadless glass slurry, chip resistor and preparation method thereof |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6128199A (en) * | 1997-03-19 | 2000-10-03 | Rohm Co., Ltd. | Composite device and manufacturing method thereof |
| CN2575817Y (en) * | 2002-08-20 | 2003-09-24 | 聚鼎科技股份有限公司 | Arc contactor module |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04129201A (en) * | 1990-09-20 | 1992-04-30 | Nec Corp | Chip resistor |
| US8098127B2 (en) * | 2007-06-07 | 2012-01-17 | Its Electronics Inc. | Resistor for microwave applications |
| KR101058602B1 (en) * | 2009-09-04 | 2011-08-22 | 삼성전기주식회사 | Array Type Chip Resistor |
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2016
- 2016-01-04 KR KR1020160000523A patent/KR101883038B1/en active IP Right Grant
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6128199A (en) * | 1997-03-19 | 2000-10-03 | Rohm Co., Ltd. | Composite device and manufacturing method thereof |
| CN2575817Y (en) * | 2002-08-20 | 2003-09-24 | 聚鼎科技股份有限公司 | Arc contactor module |
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| KR20170081453A (en) | 2017-07-12 |
| KR101883038B1 (en) | 2018-07-27 |
| CN106941033A (en) | 2017-07-11 |
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