CN106940303A - The non-destructive measuring method of semiconductive thin film impurity ionization energy is measured in MOCVD - Google Patents

The non-destructive measuring method of semiconductive thin film impurity ionization energy is measured in MOCVD Download PDF

Info

Publication number
CN106940303A
CN106940303A CN201710122173.4A CN201710122173A CN106940303A CN 106940303 A CN106940303 A CN 106940303A CN 201710122173 A CN201710122173 A CN 201710122173A CN 106940303 A CN106940303 A CN 106940303A
Authority
CN
China
Prior art keywords
ionization energy
thin film
impurity
mocvd
impurity ionization
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201710122173.4A
Other languages
Chinese (zh)
Inventor
刘志强
黄洋
伊晓燕
王军喜
李晋闽
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Institute of Semiconductors of CAS
Original Assignee
Institute of Semiconductors of CAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Institute of Semiconductors of CAS filed Critical Institute of Semiconductors of CAS
Priority to CN201710122173.4A priority Critical patent/CN106940303A/en
Publication of CN106940303A publication Critical patent/CN106940303A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited

Landscapes

  • Health & Medical Sciences (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)

Abstract

A kind of non-destructive measuring method that semiconductive thin film impurity ionization energy is measured in MOCVD, it is by analyzing the optical signature that thin-film material photoluminescence spectrum spectral strength is varied with temperature and changed in growth course, the impurity ionization energy for obtaining semiconductive thin film to be measured is calculated, the measuring method comprises the following steps：Luminescence generated by light spectrum testing system is installed in MOCVD devices；Test system measurement measures the photoluminescence spectrum of thin-film material at different temperatures, and demarcates and calculate spectral strength of the alms giver by main peak；Alms giver is fitted by main peak spectral strength temperature relation experimental data, thin-film material impurity ionization energy, including donor impurity ionization energy and acceptor impurity ionization energy is obtained；Repeat step 13, repeatedly measures semiconductive thin film impurity ionization energy to be measured, using least square method, calculates the impurity ionization energy after repeatedly measurement.The present invention is to utilize lossless spectrum resolution technology, realizes the real-time measurement to semiconductive thin film impurity ionization energy, test process quick nondestructive, high precision in MOCVD growth courses.

Description

The non-destructive measuring method of semiconductive thin film impurity ionization energy is measured in MOCVD
Technical field
The invention discloses a kind of non-destructive measuring method that semiconductive thin film impurity ionization energy is measured in MOCVD, the party Method is related to the real-time monitoring field of Semiconductor Film Growth process, particularly relates to the survey of the impurity ionization energy of MOCVD growing films Amount technology.
Background technology
It is used as the second generation and the main growing technology of third generation semiconductor film material, metal-organic chemical vapor deposition equipment (MOCVD) it is widely used in semiconductor diode, laser and field-effect transistor field.In current silicon transistor In the case that characteristic size approaches physics limit, third generation semiconductor technology delays an instead critically important original Because being exactly that film growth techniques and doping process can not meet technical grade requirement.It is right in order to improve the technological level of film growth The real-time monitoring of growth course is essential；On the one hand growth technique and quality of materials can be subjected to the matching analysis, separately The abnormal generation in growth course can be effectively prevented outside.In current MOCVD devices, have been realized in growing environment temperature The real-time measurement of degree, air pressure and film thickness, but for the real-time monitoring of even more important quality of materials and doped level, still One problem urgently to be resolved hurrily.
With regard to problem above, proposition of the invention will be realized in MOCVD growth courses to semiconductive thin film impurity ionization energy Measurement in real time, technical support is provided to improve third generation Semiconductor Film Growth and doping process level.
The content of the invention
It is an object of the present invention to provide a kind of nondestructive measurement that semiconductive thin film impurity ionization energy is measured in MOCVD Method, it is for the technical bottleneck that measurement semiconductive thin film impurity ionization energy is faced in real time in MOCVD devices at present, profit With lossless resolutions of spectra, the impurity ionization energy of semi-conducting material is real-time and accurately obtained, this method is not only realized In thin-film material growth course, the real-time measurement to semiconductive thin film impurity ionization energy, and test process quick nondestructive, precision It is high.
The present invention provides a kind of non-destructive measuring method that semiconductive thin film impurity ionization energy is measured in MOCVD, and it is logical The optical signature that thin-film material photoluminescence spectrum spectral strength is varied with temperature and changed in analysis growth course is crossed, calculates and obtains The impurity ionization energy of semiconductive thin film to be measured, the measuring method comprises the following steps：
Step 1：Luminescence generated by light spectrum testing system is installed in MOCVD devices；
Step 2：Test system measurement measures the photoluminescence spectrum of thin-film material at different temperatures, and demarcates and calculate The spectral strength at donor-acceptor peak；
Step 3：Donor-acceptor peak spectral strength-temperature relation experimental data is fitted, thin-film material impurity ionization is obtained Can, including donor impurity ionization energy and acceptor impurity ionization energy；
Step 4：Repeat step 1-3, repeatedly measures semiconductive thin film impurity ionization energy to be measured, using least square method, meter Calculate the impurity ionization energy after repeatedly measurement.
The beneficial effects of the invention are as follows using lossless spectrum resolution technology, realize and half-and-half led in MOCVD growth courses The real-time measurement of body thin film impurity ionization energy, test process quick nondestructive, high precision.
Brief description of the drawings
To further illustrate present disclosure, the present invention is described in detail below in conjunction with specific embodiment, Wherein：
Fig. 1 is flow chart of the method for the present invention.
Embodiment
Flow chart 1 is refer to, the lossless of semiconductive thin film impurity ionization energy is measured in MOCVD the invention provides a kind of Measuring method, it is by analyzing the light that thin-film material photoluminescence spectrum spectral strength is varied with temperature and changed in growth course Feature is learned, the impurity ionization energy for obtaining semiconductive thin film to be measured is calculated, specific method includes：
Step 1：Luminescence generated by light spectrum testing system is installed in MOCVD devices, it is to test to be by the photoluminescence spectrum The spectral characteristic of system, in real time measurement thin-film material；
Step 2：Test system measurement measures the photoluminescence spectrum of thin-film material at different temperatures, and demarcates and calculate The spectral strength at donor-acceptor peak, it is special by analysed film material donor-acceptor peak peak spectral strength variation with temperature Property, calculate the impurity ionization energy for obtaining thin-film material；
Step 3：Donor-acceptor peak spectral strength-temperature relation experimental data is fitted, thin-film material impurity electricity is obtained in real time From energy, including donor impurity ionization energy and acceptor impurity ionization energy, it is to use formula fitting thin-film material donor-acceptor peak peak Spectral strength-temperature relation experimental data, calculates the impurity ionization energy of semiconductive thin film, and the formula of wherein formula fitting refers to
Wherein parameter En、Ep, as donor impurity ionization energy and acceptor impurity ionization energy, I is spectral strength, and T is temperature, k For Boltzmann constant, α, β, θ,It is fitting parameter.
Step 4：Repeat step 1-3, repeatedly measures semiconductive thin film impurity ionization energy to be measured, using least square method, meter Calculate the impurity ionization energy after repeatedly measurement.
The wherein described non-destructive measuring method that semiconductive thin film impurity ionization energy is measured in MOCVD, it is in film During Material growth, the impurity ionization energy of thin-film material is measured in real time.
The wherein described non-destructive measuring method that semiconductive thin film impurity ionization energy is measured in MOCVD, it is based on half The photoluminescence spectrum test of conductor thin film, is analyzed by spectral peak, the impurity ionization energy of thin-film material in growth course is measured in real time.
The wherein described non-destructive measuring method that semiconductive thin film impurity ionization energy is measured in MOCVD, can be realized simultaneously Real-time measurement to semiconductive thin film donor impurity ionization energy to be measured and acceptor impurity ionization energy.
The wherein described non-destructive measuring method that semiconductive thin film impurity ionization energy is measured in MOCVD, can be obtained simultaneously The donor impurity ionization energy and acceptor impurity ionization energy of semi-conducting material to be measured.
The wherein described non-destructive measuring method that semiconductive thin film impurity ionization energy is measured in MOCVD, in measurement process In, damage will not be caused to semi-conducting material.
The wherein described non-destructive measuring method that semiconductive thin film impurity ionization energy is measured in MOCVD, due to its test Process is simple, efficient, it is possible to achieve repeatedly measurement, significantly reduces experimental error.
As previously discussed, only it is presently preferred embodiments of the present invention, only, the interest field that the present invention is advocated is not limited to In this, all one of ordinary skilled in the art, according to disclosed herein technology contents, can think easily and equivalence changes, The category that the present invention is intended to advocate protection cannot should not be belonged to de-ly.

Claims (8)

1.一种在MOCVD中测量半导体薄膜杂质电离能的无损测量方法，其是通过分析生长过程中薄膜材料光致发光谱谱峰强度随温度变化而变化的光学特征，计算获得待测半导体薄膜的杂质电离能，该测量方法包括如下步骤：1. A non-destructive measurement method for measuring semiconductor thin film impurity ionization energy in MOCVD, it is by analyzing the optical characteristics that the photoluminescence spectrum peak intensity of thin film material changes with temperature during the growth process, and calculates the semiconductor thin film to be measured Impurity ionization energy, the measurement method includes the following steps: 步骤1：在MOCVD装置中安装光致发光谱测试系统；Step 1: Install a photoluminescence spectroscopy test system in the MOCVD device; 步骤2：该测试系统测量在不同温度下测量薄膜材料的光致发光谱，并标定和计算施主-受主峰的谱峰强度；Step 2: The test system measures the photoluminescence spectrum of the thin film material at different temperatures, and calibrates and calculates the spectral peak intensity of the donor-acceptor peak; 步骤3：拟合施主-受主峰谱峰强度-温度关系实验数据，获得薄膜材料杂质电离能，包括施主杂质电离能和受主杂质电离能；Step 3: Fitting the experimental data of the donor-acceptor peak intensity-temperature relationship to obtain the impurity ionization energy of the film material, including the ionization energy of the donor impurity and the ionization energy of the acceptor impurity; 步骤4：重复步骤1-3，多次测量待测半导体薄膜杂质电离能，采用最小二乘法，计算多次测量后的杂质电离能。Step 4: Repeat steps 1-3, measure the impurity ionization energy of the semiconductor film to be tested multiple times, and use the least square method to calculate the impurity ionization energy after multiple measurements. 2.根据权利要求1所述的在MOCVD中测量半导体薄膜杂质电离能的无损测量方法，其是在MOCVD装置中集成光致发光谱测试系统，实时测量薄膜材料的光谱特性。2. the non-destructive measurement method of measuring semiconductor thin film impurity ionization energy in MOCVD according to claim 1, it is to integrate photoluminescence spectrum testing system in MOCVD device, measure the spectral characteristic of thin film material in real time. 3.根据权利要求1所述的在MOCVD中测量半导体薄膜杂质电离能的无损测量方法，其是在薄膜材料生长过程中，实时测量薄膜材料的杂质电离能。3. the non-destructive measurement method of measuring semiconductor thin film impurity ionization energy in MOCVD according to claim 1, it is in thin film material growth process, the impurity ionization energy of real-time measurement thin film material. 4.根据权利要求1所述的在MOCVD中测量半导体薄膜杂质电离能的无损测量方法，其中基于半导体薄膜的光致发光谱测试，其是通过谱峰分析，实时测量生长过程中薄膜材料的杂质电离能。4. the non-destructive measuring method of measuring semiconductor thin film impurity ionization energy in MOCVD according to claim 1, wherein based on the photoluminescence spectrum test of semiconductor thin film, it is by spectrum peak analysis, the impurity of thin film material in the real-time measurement growth process ionization energy. 5.根据权利要求1所述的在MOCVD中测量半导体薄膜杂质电离能的无损测量方法，其是通过分析薄膜材料施主-受主峰峰谱峰强度随温度的变化特性，计算获得薄膜材料的杂质电离能。5. the non-destructive measurement method of measuring semiconductor thin film impurity ionization energy in MOCVD according to claim 1, it is by analyzing thin film material donor-acceptor peak spectrum peak intensity variation characteristic with temperature, calculates the impurity ionization of thin film material can. 6.根据权利要求1所述的在MOCVD中测量半导体薄膜杂质电离能的无损测量方法，其中基于该方法，可同时实现对待测半导体薄膜施主杂质电离能和受主杂质电离能的实时测量。6. The non-destructive measurement method for measuring semiconductor film impurity ionization energy in MOCVD according to claim 1, wherein based on the method, real-time measurement of donor impurity ionization energy and acceptor impurity ionization energy of semiconductor film to be tested can be realized simultaneously. 7.根据权利要求1所述的在MOCVD中测量半导体薄膜杂质电离能的无损测量方法，其是采用公式拟合薄膜材料施主-受主峰峰谱峰强度-温度关系实验数据，计算半导体薄膜的杂质电离能。7. according to claim 1, measure the non-destructive measurement method of semiconductor thin film impurity ionization energy in MOCVD, it is to adopt formula fitting thin film material donor-acceptor peak spectrum peak intensity-temperature relation experimental data, calculate the impurity of semiconductor thin film ionization energy. 8.根据权利要求7所述的在MOCVD中测量半导体薄膜杂质电离能的无损测量方法，其中公式拟合的公式是指8. according to claim 7, measure the non-destructive measurement method of semiconductor thin film impurity ionization energy in MOCVD, wherein the formula of formula fitting refers to
CN201710122173.4A 2017-03-02 2017-03-02 The non-destructive measuring method of semiconductive thin film impurity ionization energy is measured in MOCVD Pending CN106940303A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201710122173.4A CN106940303A (en) 2017-03-02 2017-03-02 The non-destructive measuring method of semiconductive thin film impurity ionization energy is measured in MOCVD

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201710122173.4A CN106940303A (en) 2017-03-02 2017-03-02 The non-destructive measuring method of semiconductive thin film impurity ionization energy is measured in MOCVD

Publications (1)

Publication Number Publication Date
CN106940303A true CN106940303A (en) 2017-07-11

Family

ID=59468622

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201710122173.4A Pending CN106940303A (en) 2017-03-02 2017-03-02 The non-destructive measuring method of semiconductive thin film impurity ionization energy is measured in MOCVD

Country Status (1)

Country Link
CN (1) CN106940303A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111366833A (en) * 2020-03-16 2020-07-03 深圳第三代半导体研究院 Method for measuring activation energy of impurities in semiconductor

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102778295A (en) * 2012-08-21 2012-11-14 南昌黄绿照明有限公司 Spectrum device for measuring LED (light-emitting diode) epitaxial wafer photoluminescence on line
US20130122612A1 (en) * 2011-11-10 2013-05-16 Alliance For Sustainable Energy, Llc Photoluminescence-based quality control for thin film absorber layers of photovoltaic devices
US20140106062A1 (en) * 2012-10-16 2014-04-17 The Regents Of The University Of Michigan Method of monitoring photoactive organic molecules in-situ during gas-phase deposition of the photoactive organic molecules

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130122612A1 (en) * 2011-11-10 2013-05-16 Alliance For Sustainable Energy, Llc Photoluminescence-based quality control for thin film absorber layers of photovoltaic devices
CN102778295A (en) * 2012-08-21 2012-11-14 南昌黄绿照明有限公司 Spectrum device for measuring LED (light-emitting diode) epitaxial wafer photoluminescence on line
US20140106062A1 (en) * 2012-10-16 2014-04-17 The Regents Of The University Of Michigan Method of monitoring photoactive organic molecules in-situ during gas-phase deposition of the photoactive organic molecules

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
C. PRALL等: "Photoluminescence from GaN layers at high temperatures as a candidate for in situ monitoring in MOVPE", 《JOURNAL OF CRYSTAL GROWTH》 *
YANG HUANG等: "Investigation of Isoelectronic Doping in p-GaN Based on the Thermal Quenching of UVL Band", 《IEEE PHOTONICS JOURNAL》 *
ZHIQIANG LIU等: "Analysis of Photoluminescence Thermal Quenching: Guidance for the Design of Highly Effective p-type Doping of Nitrides", 《SCIENTIFIC REPORTS》 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111366833A (en) * 2020-03-16 2020-07-03 深圳第三代半导体研究院 Method for measuring activation energy of impurities in semiconductor

Similar Documents

Publication Publication Date Title
KR102746887B1 (en) Raman spectroscopy-based measurements on patterned structures
KR102141228B1 (en) Method and apparatus for measuring physical quantity of a thin layer using terahertz spectroscopy
CN109060164B (en) Light-emitting device temperature distribution measurement device and measurement method based on micro-hyperspectral
Pavlidis et al. Thermal performance of GaN/Si HEMTs using near-bandgap thermoreflectance imaging
WO2014112153A1 (en) Method for evaluating oxide semiconductor thin film, and method for quality control of oxide semiconductor thin film
CN106940303A (en) The non-destructive measuring method of semiconductive thin film impurity ionization energy is measured in MOCVD
CN108333143B (en) A Correction Method for Water Vapor Concentration Measurement Based on Tunable Laser Absorption Spectroscopy
Meng et al. Research on transient temperature rise measurement method for semiconductor devices based on photothermal reflection
US10234281B2 (en) Method for evaluating haze
CN102662096A (en) Method for measuring surface photovoltage of semiconductor material
JP6381854B1 (en) Semiconductor device testing method and semiconductor device manufacturing method
CN111830007B (en) Method and system for measuring gallium vacancy concentration of gallium nitride material
US20240347399A1 (en) Semiconductor doping characterization method using photoneutralization time constant of corona surface charge
JP6861839B2 (en) Semiconductor device test method and semiconductor device manufacturing method
JP6118288B2 (en) Method for measuring carbon concentration in nitride semiconductor and method for producing nitride semiconductor
CN110470611A (en) A kind of on-line measuring device and method of gaN series film growth conditions
CN102479730B (en) Method for monitoring concentrations of doped impurities of doped epitaxial layer
Han et al. Determination of dopant density profiles of heavily boron-doped silicon from low temperature microphotoluminescence spectroscopy
Gelhausen et al. Depth-resolved cathodoluminescence microanalysis of near-edge emission in III-nitride thin films
US8911145B2 (en) Method to measure the characteristics in an electrical component
JP5556090B2 (en) Quantitative analysis limit determination method in iron concentration analysis in boron-doped p-type silicon
Hong et al. Optical characterization of GaN-based LED devices through spectroscopic ellipsometry
CN111982885A (en) Non-contact type film water oxygen transmission performance testing method
Hodges et al. Improved gate process control at the 130-nm node using spectroscopic-ellipsometry-based profile metrology
CN102539357A (en) Method for testing aluminum element content in aluminum gallium and nitrogen wafer epitaxial layer

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
RJ01 Rejection of invention patent application after publication
RJ01 Rejection of invention patent application after publication

Application publication date: 20170711