CN106940303A - The non-destructive measuring method of semiconductive thin film impurity ionization energy is measured in MOCVD - Google Patents
The non-destructive measuring method of semiconductive thin film impurity ionization energy is measured in MOCVD Download PDFInfo
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- CN106940303A CN106940303A CN201710122173.4A CN201710122173A CN106940303A CN 106940303 A CN106940303 A CN 106940303A CN 201710122173 A CN201710122173 A CN 201710122173A CN 106940303 A CN106940303 A CN 106940303A
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- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
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Abstract
A kind of non-destructive measuring method that semiconductive thin film impurity ionization energy is measured in MOCVD, it is by analyzing the optical signature that thin-film material photoluminescence spectrum spectral strength is varied with temperature and changed in growth course, the impurity ionization energy for obtaining semiconductive thin film to be measured is calculated, the measuring method comprises the following steps：Luminescence generated by light spectrum testing system is installed in MOCVD devices；Test system measurement measures the photoluminescence spectrum of thin-film material at different temperatures, and demarcates and calculate spectral strength of the alms giver by main peak；Alms giver is fitted by main peak spectral strength temperature relation experimental data, thin-film material impurity ionization energy, including donor impurity ionization energy and acceptor impurity ionization energy is obtained；Repeat step 13, repeatedly measures semiconductive thin film impurity ionization energy to be measured, using least square method, calculates the impurity ionization energy after repeatedly measurement.The present invention is to utilize lossless spectrum resolution technology, realizes the real-time measurement to semiconductive thin film impurity ionization energy, test process quick nondestructive, high precision in MOCVD growth courses.
Description
Technical field
The invention discloses a kind of non-destructive measuring method that semiconductive thin film impurity ionization energy is measured in MOCVD, the party
Method is related to the real-time monitoring field of Semiconductor Film Growth process, particularly relates to the survey of the impurity ionization energy of MOCVD growing films
Amount technology.
Background technology
It is used as the second generation and the main growing technology of third generation semiconductor film material, metal-organic chemical vapor deposition equipment
(MOCVD) it is widely used in semiconductor diode, laser and field-effect transistor field.In current silicon transistor
In the case that characteristic size approaches physics limit, third generation semiconductor technology delays an instead critically important original
Because being exactly that film growth techniques and doping process can not meet technical grade requirement.It is right in order to improve the technological level of film growth
The real-time monitoring of growth course is essential；On the one hand growth technique and quality of materials can be subjected to the matching analysis, separately
The abnormal generation in growth course can be effectively prevented outside.In current MOCVD devices, have been realized in growing environment temperature
The real-time measurement of degree, air pressure and film thickness, but for the real-time monitoring of even more important quality of materials and doped level, still
One problem urgently to be resolved hurrily.
With regard to problem above, proposition of the invention will be realized in MOCVD growth courses to semiconductive thin film impurity ionization energy
Measurement in real time, technical support is provided to improve third generation Semiconductor Film Growth and doping process level.
The content of the invention
It is an object of the present invention to provide a kind of nondestructive measurement that semiconductive thin film impurity ionization energy is measured in MOCVD
Method, it is for the technical bottleneck that measurement semiconductive thin film impurity ionization energy is faced in real time in MOCVD devices at present, profit
With lossless resolutions of spectra, the impurity ionization energy of semi-conducting material is real-time and accurately obtained, this method is not only realized
In thin-film material growth course, the real-time measurement to semiconductive thin film impurity ionization energy, and test process quick nondestructive, precision
It is high.
The present invention provides a kind of non-destructive measuring method that semiconductive thin film impurity ionization energy is measured in MOCVD, and it is logical
The optical signature that thin-film material photoluminescence spectrum spectral strength is varied with temperature and changed in analysis growth course is crossed, calculates and obtains
The impurity ionization energy of semiconductive thin film to be measured, the measuring method comprises the following steps：
Step 1：Luminescence generated by light spectrum testing system is installed in MOCVD devices；
Step 2：Test system measurement measures the photoluminescence spectrum of thin-film material at different temperatures, and demarcates and calculate
The spectral strength at donor-acceptor peak；
Step 3：Donor-acceptor peak spectral strength-temperature relation experimental data is fitted, thin-film material impurity ionization is obtained
Can, including donor impurity ionization energy and acceptor impurity ionization energy；
Step 4：Repeat step 1-3, repeatedly measures semiconductive thin film impurity ionization energy to be measured, using least square method, meter
Calculate the impurity ionization energy after repeatedly measurement.
The beneficial effects of the invention are as follows using lossless spectrum resolution technology, realize and half-and-half led in MOCVD growth courses
The real-time measurement of body thin film impurity ionization energy, test process quick nondestructive, high precision.
Brief description of the drawings
To further illustrate present disclosure, the present invention is described in detail below in conjunction with specific embodiment,
Wherein：
Fig. 1 is flow chart of the method for the present invention.
Embodiment
Flow chart 1 is refer to, the lossless of semiconductive thin film impurity ionization energy is measured in MOCVD the invention provides a kind of
Measuring method, it is by analyzing the light that thin-film material photoluminescence spectrum spectral strength is varied with temperature and changed in growth course
Feature is learned, the impurity ionization energy for obtaining semiconductive thin film to be measured is calculated, specific method includes：
Step 1：Luminescence generated by light spectrum testing system is installed in MOCVD devices, it is to test to be by the photoluminescence spectrum
The spectral characteristic of system, in real time measurement thin-film material；
Step 2：Test system measurement measures the photoluminescence spectrum of thin-film material at different temperatures, and demarcates and calculate
The spectral strength at donor-acceptor peak, it is special by analysed film material donor-acceptor peak peak spectral strength variation with temperature
Property, calculate the impurity ionization energy for obtaining thin-film material；
Step 3：Donor-acceptor peak spectral strength-temperature relation experimental data is fitted, thin-film material impurity electricity is obtained in real time
From energy, including donor impurity ionization energy and acceptor impurity ionization energy, it is to use formula fitting thin-film material donor-acceptor peak peak
Spectral strength-temperature relation experimental data, calculates the impurity ionization energy of semiconductive thin film, and the formula of wherein formula fitting refers to
Wherein parameter En、Ep, as donor impurity ionization energy and acceptor impurity ionization energy, I is spectral strength, and T is temperature, k
For Boltzmann constant, α, β, θ,It is fitting parameter.
Step 4：Repeat step 1-3, repeatedly measures semiconductive thin film impurity ionization energy to be measured, using least square method, meter
Calculate the impurity ionization energy after repeatedly measurement.
The wherein described non-destructive measuring method that semiconductive thin film impurity ionization energy is measured in MOCVD, it is in film
During Material growth, the impurity ionization energy of thin-film material is measured in real time.
The wherein described non-destructive measuring method that semiconductive thin film impurity ionization energy is measured in MOCVD, it is based on half
The photoluminescence spectrum test of conductor thin film, is analyzed by spectral peak, the impurity ionization energy of thin-film material in growth course is measured in real time.
The wherein described non-destructive measuring method that semiconductive thin film impurity ionization energy is measured in MOCVD, can be realized simultaneously
Real-time measurement to semiconductive thin film donor impurity ionization energy to be measured and acceptor impurity ionization energy.
The wherein described non-destructive measuring method that semiconductive thin film impurity ionization energy is measured in MOCVD, can be obtained simultaneously
The donor impurity ionization energy and acceptor impurity ionization energy of semi-conducting material to be measured.
The wherein described non-destructive measuring method that semiconductive thin film impurity ionization energy is measured in MOCVD, in measurement process
In, damage will not be caused to semi-conducting material.
The wherein described non-destructive measuring method that semiconductive thin film impurity ionization energy is measured in MOCVD, due to its test
Process is simple, efficient, it is possible to achieve repeatedly measurement, significantly reduces experimental error.
As previously discussed, only it is presently preferred embodiments of the present invention, only, the interest field that the present invention is advocated is not limited to
In this, all one of ordinary skilled in the art, according to disclosed herein technology contents, can think easily and equivalence changes,
The category that the present invention is intended to advocate protection cannot should not be belonged to de-ly.
Claims (8)
1. a kind of non-destructive measuring method that semiconductive thin film impurity ionization energy is measured in MOCVD, it was grown by analysis
The optical signature that thin-film material photoluminescence spectrum spectral strength is varied with temperature and changed in journey, calculates and obtains semiconductor film to be measured
The impurity ionization energy of film, the measuring method comprises the following steps：
Step 1：Luminescence generated by light spectrum testing system is installed in MOCVD devices；
Step 2：Test system measurement measures the photoluminescence spectrum of thin-film material at different temperatures, and demarcation and calculating are applied
Main-by the spectral strength of main peak；
Step 3：Donor-acceptor peak spectral strength-temperature relation experimental data is fitted, thin-film material impurity ionization energy, bag is obtained
Include donor impurity ionization energy and acceptor impurity ionization energy；
Step 4：Repeat step 1-3, repeatedly measures semiconductive thin film impurity ionization energy to be measured, using least square method, calculates many
Impurity ionization energy after secondary measurement.
2. the non-destructive measuring method according to claim 1 that semiconductive thin film impurity ionization energy is measured in MOCVD, it is
The spectral characteristic of the integrated luminescence generated by light spectrum testing system in MOCVD devices, in real time measurement thin-film material.
3. the non-destructive measuring method according to claim 1 that semiconductive thin film impurity ionization energy is measured in MOCVD, it is
In thin-film material growth course, the impurity ionization energy of thin-film material is measured in real time.
4. the non-destructive measuring method according to claim 1 that semiconductive thin film impurity ionization energy is measured in MOCVD, wherein
Photoluminescence spectrum test based on semiconductive thin film, it is analyzed by spectral peak, in real time thin-film material in measurement growth course
Impurity ionization energy.
5. the non-destructive measuring method according to claim 1 that semiconductive thin film impurity ionization energy is measured in MOCVD, it is
By analysed film material donor-acceptor peak peak spectral strength variation with temperature characteristic, the impurity for obtaining thin-film material is calculated
Ionization energy.
6. the non-destructive measuring method according to claim 1 that semiconductive thin film impurity ionization energy is measured in MOCVD, wherein
Based on this method, the real-time survey to semiconductive thin film donor impurity ionization energy to be measured and acceptor impurity ionization energy can be realized simultaneously
Amount.
7. the non-destructive measuring method according to claim 1 that semiconductive thin film impurity ionization energy is measured in MOCVD, it is
Using formula fitting thin-film material donor-acceptor peak peak spectral strength-temperature relation experimental data, the miscellaneous of semiconductive thin film is calculated
Matter ionization energy.
8. the non-destructive measuring method according to claim 7 that semiconductive thin film impurity ionization energy is measured in MOCVD, wherein
The formula of formula fitting refers to
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111366833A (en) * | 2020-03-16 | 2020-07-03 | 深圳第三代半导体研究院 | Method for measuring activation energy of impurities in semiconductor |
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| US20130122612A1 (en) * | 2011-11-10 | 2013-05-16 | Alliance For Sustainable Energy, Llc | Photoluminescence-based quality control for thin film absorber layers of photovoltaic devices |
| US20140106062A1 (en) * | 2012-10-16 | 2014-04-17 | The Regents Of The University Of Michigan | Method of monitoring photoactive organic molecules in-situ during gas-phase deposition of the photoactive organic molecules |
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2017
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| US20130122612A1 (en) * | 2011-11-10 | 2013-05-16 | Alliance For Sustainable Energy, Llc | Photoluminescence-based quality control for thin film absorber layers of photovoltaic devices |
| CN102778295A (en) * | 2012-08-21 | 2012-11-14 | 南昌黄绿照明有限公司 | Spectrum device for measuring LED (light-emitting diode) epitaxial wafer photoluminescence on line |
| US20140106062A1 (en) * | 2012-10-16 | 2014-04-17 | The Regents Of The University Of Michigan | Method of monitoring photoactive organic molecules in-situ during gas-phase deposition of the photoactive organic molecules |
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| C. PRALL等: "Photoluminescence from GaN layers at high temperatures as a candidate for in situ monitoring in MOVPE", 《JOURNAL OF CRYSTAL GROWTH》 * |
| YANG HUANG等: "Investigation of Isoelectronic Doping in p-GaN Based on the Thermal Quenching of UVL Band", 《IEEE PHOTONICS JOURNAL》 * |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111366833A (en) * | 2020-03-16 | 2020-07-03 | 深圳第三代半导体研究院 | Method for measuring activation energy of impurities in semiconductor |
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