CN106935721A - A kind of quantum dot solar cell based on drop epitaxy technology and preparation method thereof - Google Patents

A kind of quantum dot solar cell based on drop epitaxy technology and preparation method thereof Download PDF

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CN106935721A
CN106935721A CN201710289119.9A CN201710289119A CN106935721A CN 106935721 A CN106935721 A CN 106935721A CN 201710289119 A CN201710289119 A CN 201710289119A CN 106935721 A CN106935721 A CN 106935721A
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quantum dot
solar cell
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thickness
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王志明
余鹏
李彩虹
巫江
刘德胜
姬海宁
牛晓滨
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University of Electronic Science and Technology of China
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    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
    • H—ELECTRICITY
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    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
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Abstract

The present invention discloses a kind of quantum dot solar cell based on drop epitaxy technology, the quantum dot solar cell includes the substrate layer, cushion, separation layer, quantum-dot structure layer, emission layer, the contact electrode layer in multiple cycles that set gradually from down to up, each cycle of the quantum-dot structure layer in the multiple cycle includes at least one of which quantum dot layer, one layer of first wall, one layer of second wall, and the quantum dot layer grows to be formed for drop epitaxy method.The drop epitaxy that the application is used can obtain the quantum dot layer of zero lattice mismatch, on the premise of the density and size for keeping quantum dot, the defect that drop epitaxially grown quantum dot layer is introduced minimum be can be reached, the optical property and conversion efficiency of quantum dot solar cell improved.

Description

A kind of quantum dot solar cell based on drop epitaxy technology and preparation method thereof
Technical field
The present invention relates to quantum dot solar cell and preparation method thereof technical field, and in particular to one kind is based on outside drop Prolong quantum dot solar cell of technology and preparation method thereof.
Background technology
Under energy crisis and the international overall background of environmental pollution, various countries be devoted to solar energy, wind energy, tide energy, The research and development and utilization of the new energy such as heat energy and nuclear energy.Wherein solar energy turns into emphasis as a kind of sufficient clean regenerative resource Research and development object.
The efficiency of traditional commercialized silica-based solar cell already close to its limit, in order to realize higher efficiency Solar cell, the concept of quantum dot solar battery is suggested.Quantum dot solar battery is the third generation for beginning one's study recent years Solar cell, the amount that it is designed using the quantum dot with quantum limitation effect and discrete spectrum characteristic and made as active area Son point solar cell, can improve its energy conversion efficiency, and its limiting value can reach 66%.
Traditionally the method for growth quantum point is the molecular beam epitaxy based on S-K patterns, but this method can only be answered For dissimilar materials system, it requires that quanta point material and base material want lattice mismatch.For molecular beam epitaxy requirement The problem of lattice mismatch, can be solved by drop epitaxy, however, the quantum dot solar battery prepared using the method Optical property and conversion efficiency are all less satisfactory (5% or so), main reasons is that the quantum of low temperature drop epitaxial growth Point can introduce many defects, and then have influence on the overall performance of the quantum dot solar battery of growth.
The content of the invention
In view of this, the application provides a kind of quantum dot solar cell and its preparation side based on drop epitaxy technology Method, the drop epitaxy of use can obtain the quantum dot layer of zero lattice mismatch, before the density and size that keep quantum dot Put, the defect that drop epitaxially grown quantum dot layer is introduced can be reached minimum, improve the light of quantum dot solar cell Learn performance and conversion efficiency.
To solve above technical problem, the technical scheme that the present invention is provided is a kind of quantum dot based on drop epitaxy technology Solar cell is substrate layer that the quantum dot solar cell includes setting gradually from down to up, cushion, separation layer, more The quantum-dot structure layer in individual cycle, emission layer, contact electrode layer, the bag of each cycle of the quantum-dot structure layer in the multiple cycle At least one of which quantum dot layer, one layer of first wall, one layer of second wall are included, the quantum dot layer is given birth to for drop epitaxy method It is long to be formed.
Wherein, described drop epitaxy method growth is specially the source metal for depositing multiple individual layers respectively successively.
Preferably, the quantum dot layer is III-V quantum dot layer, and first wall is N-shaped arsenic doped Change gallium aluminium lamination, second wall is undoped p arsenide layers.
It is more highly preferred to, the III-V quantum dot layer is Gallium indium arsenide quantum dot layer or gallium arsenide quanta point Layer.
It is more highly preferred to, the III-V quantum dot layer is gallium arsenide quanta point layer.Experiment discovery, quantum dot Layer is respectively adopted gallium arsenide quanta point layer and Gallium indium arsenide quantum dot layer, the quantum dot solar cell being made, in physical pattern Including quantum dot density and size aspect it is almost indistinguishable under the premise of, the solar cell of gallium arsenide quanta point layer it is optical Can will be better than the solar cell of Gallium indium arsenide quantum dot layer with conversion efficiency, reason is the crystalline substance of the former and Aluminum gallium arsenide's basalis Lattice parameter is more matched.
Preferably, the periodicity of the quantum-dot structure layer in the multiple cycle is not less than 2.
It is more highly preferred to, the periodicity of the quantum-dot structure layer in the multiple cycle is 10.
Preferably, the depositional mode of the quantum-dot structure layer in the multiple cycle is molecular beam epitaxy or Organometallic Learn sedimentation.
Preferably, the substrate layer is N-shaped gallium arsenide single-crystal wafer or semi-insulating p type gallium arensidep single-chip, and the cushion is Gallium arsenide layer, the separation layer is arsenide layers, and the emission layer is p-type undoped gallium arsenide aluminium lamination, the contact electrode layer It is p-type heavy doping gallium arsenide layer.
It is more highly preferred to, the substrate layer is N-shaped heavy doping gallium arsenide single-crystal wafer, the cushion is N-shaped heavy doping arsenic Change gallium layer.
It is more highly preferred to, the emission layer deposits to be formed using molecular beam epitaxial method or Organometallic Chemistry method, wherein The doping concentration of GaAs is 1 × 1017~1 × 1018cm-3。
Preferably, back of the body electric field layer and substrate are also disposed between the cushion and the separation layer from down to up Layer, the back of the body electric field layer is gallium arsenide layer, and the basalis is arsenide layers.
Preferably, Window layer is additionally provided between the emission layer and the contact electrode layer, the Window layer is mixed for p-type Miscellaneous arsenide layers.
Preferably, the quantum dot solar cell also includes back electrode and positive electrode, and the back electrode is located at the lining Bottom bottom, the positive electrode is located at the contact electrode layer top.
It is more highly preferred to, the positive electrode and the back electrode are metal electrode, can be using commonly used in the art suitable Mode formed, such as formed using vacuum coating method.
Wherein, the back electrode is titanium alloy, billon.
For example, back electrode is first to be deposited with Ti 20nm, then the structure for being deposited with Au 100nm formation.
Technical scheme also provides a kind of preparation method of the quantum dot solar cell based on drop epitaxy technology, The preparation method is comprised the following steps：
(1) substrate layer is provided, the substrate layer is N-shaped gallium arsenide single-crystal wafer or semi-insulating p type gallium arensidep single-chip；
(2) grown buffer layer on the substrate layer, the cushion is gallium arsenide layer；
(3) back of the body electric field layer is grown on the cushion, the back of the body electric field layer is gallium arsenide layer；
(4) the growth substrate layer on the back of the body electric field layer, the basalis is arsenide layers；
(5) separation layer is grown on the basalis, the separation layer is arsenide layers；
(6) the quantum-dot structure layer in multiple cycles is grown on the separation layer, each of which cycle includes at least one of which Quantum dot layer, one layer of first wall, one layer of second wall, the quantum dot layer grows to be formed for drop epitaxy method；Institute The thickness of the first wall stated is 5~15nm, and growth temperature is 350~450 DEG C；The thickness of second wall be 20~ 60nm, growth temperature is 550~620 DEG C；
(7) emission layer is formed on quantum-dot structure layer, the emission layer is p-type undoped gallium arsenide aluminium lamination；
(8) Window layer is formed on the emission layer, the Window layer is p-type undoped gallium arsenide aluminium lamination；
(9) contact electrode layer is formed in the Window layer, the contact electrode layer is p-type heavy doping gallium arsenide layer；
(10) annealed under 400~800 DEG C of condition of nitrogen gas；By this step reduce drop epitaxial growth quantum dot lack Fall into, improve open-circuit voltage and short circuit current；
(11) positive electrode is formed on the contact electrode layer, back electrode is formed under the substrate layer；
(12) annealed under 350~400 DEG C of condition of nitrogen gas, Ohmic contact is formed by this step.
Preferably, the thickness of the first described wall is 10nm, and growth temperature is 400 DEG C；Second wall Thickness is 40nm, and growth temperature is 590 DEG C；
Preferably, step (10) annealing is specially and is annealed using quick anneal oven.
Preferably, the thickness of the cushion is 80~150nm, and growth temperature is 450~550 DEG C；The back of the body electric field layer Thickness be 10~50nm, growth temperature be 550~650 DEG C；The thickness of the basalis is 450~550nm；The separation layer Thickness be 20~80nm；The thickness of the emission layer is 150~250nm, and growth temperature is 450~550 DEG C；The Window layer Thickness be 10~50nm；The thickness of the contact electrode layer is 20~80nm, and growth temperature is 350~450 DEG C.
It is more highly preferred to, the thickness of the cushion is 100nm, and growth temperature is 600 DEG C；The thickness of the back of the body electric field layer It is 30nm, growth temperature is 580 DEG C；The thickness of the basalis is 500nm；The thickness of the separation layer is 50nm；The hair The thickness of layer is penetrated for 200nm, growth temperature is 500 DEG C；The thickness of the Window layer is 30nm；The thickness of the contact electrode layer It is 50nm, growth temperature is 400 DEG C.
Preferably, the quantum dot layer is III-V quantum dot layer, and first wall is N-shaped arsenic doped Change gallium aluminium lamination, second wall is undoped p arsenide layers.
It is more highly preferred to, the III-V quantum dot layer is Gallium indium arsenide quantum dot layer or gallium arsenide quanta point Layer.
It is more highly preferred to, the III-V quantum dot layer is gallium arsenide quanta point layer.
Preferably, the periodicity of the quantum-dot structure layer in the multiple cycle is not less than 2.
It is more highly preferred to, the periodicity of the quantum-dot structure layer in the multiple cycle is 10.
Preferably, the substrate layer is N-shaped heavy doping gallium arsenide single-crystal wafer, and the cushion is N-shaped heavy doping GaAs Layer.
In technical scheme, described heavy doping refers to that impurity concentration reaches 10 in sample18cm-3。
Quantum dot solar cell described in technical scheme, includes substrate layer, cushion, separation layer, multiple The quantum-dot structure layer in cycle, emission layer, contact electrode layer, each cycle of the quantum-dot structure layer in plurality of cycle include At least one of which quantum dot layer, one layer of first wall, one layer of second wall, the quantum dot layer grow for drop epitaxy method Formed.Technical scheme grows the quantum dot of strainless zero lattice mismatch using drop epitaxy, while by quantum dot Structure sheaf is set to include the sandwich structure of at least one of which quantum dot layer, one layer of first wall, one layer of second wall, prevents Only decomposition of the subsequent high temperature operation to component, while strengthening the light absorbs of solar cell.Additionally, in quantum-dot structure layer Quantum dot layer employ semiconductor III-V quantum dot layer, optimize its matching with the lattice parameter of basalis Degree.
Quantum dot solar cell based on drop epitaxy technology described herein is prepared using foregoing preparation method Formed, wherein also need to be made annealing treatment under the conditions of 350~400 DEG C after back electrode formation, by preparation process In thermal anneal process, it is possible to reduce the defect that the quantum dot of drop epitaxial growth is introduced, the non-radiative recombination for introducing defect Center is reduced at any time, and the defect for allowing growth quantum point to introduce reaches minimum.Quantum dot density and size premise can kept Under, absorb more light and produce bigger photoelectric current, the thickness of emission layer is maintained to greatest extent, so as to improve sun electricity The optical property and conversion efficiency in pond.
Therefore, compared with prior art, its advantage is the application：Mould is grown compared to traditional self assembly S-K Formula, the drop epitaxy that technical scheme is used can obtain the quantum dot layer of zero lattice mismatch, keep quantum dot On the premise of density and size, the defect that drop epitaxially grown quantum dot layer is introduced can be reached minimum, improve quantum dot The optical property and conversion efficiency of solar cell.
Brief description of the drawings
Fig. 1 is a kind of structural representation of herein described quantum dot solar cell based on drop epitaxy technology, its The periodicity of the quantum-dot structure layer in middle multiple cycles is 2.
Specific embodiment
In order that those skilled in the art more fully understands technical scheme, with reference to specific embodiment pair The present invention is described in further detail.
As shown in figure 1, a kind of quantum dot solar cell based on drop epitaxy technology described herein, include by Under to the substrate layer 2, cushion 3, separation layer 6 for above setting gradually, the quantum-dot structure in multiple cycle layer 7, emission layer 8, electrode Contact layer 10, each cycle of the quantum-dot structure layer 7 in the multiple cycle includes 71, one layer first of at least one of which quantum dot layer 72, one layer of second wall 73 of wall, the quantum dot layer 71 grows to be formed for drop epitaxy method, the quantum in multiple cycles The periodicity of point structure sheaf 7 is not less than 2, preferably 10, and its depositional mode is molecular beam epitaxy or metal organic chemical deposition Method.
Wherein, quantum dot layer 71 is III-V quantum dot layer, preferably Gallium indium arsenide quantum dot layer or GaAs Quantum dot layer, more preferably gallium arsenide quanta point layer, first wall 72 are N-shaped undoped gallium arsenide aluminium lamination, described second Wall 73 is undoped p arsenide layers.
Wherein, substrate layer 2 is N-shaped gallium arsenide single-crystal wafer or semi-insulating p type gallium arensidep single-chip, preferably N-shaped heavy doping arsenic Change algan single crystal piece, the cushion 3 is gallium arsenide layer, preferably N-shaped heavy doping gallium arsenide layer, and the separation layer 6 is GaAs Aluminium lamination, the emission layer 8 is p-type undoped gallium arsenide aluminium lamination, using molecular beam epitaxial method or Organometallic Chemistry method deposition shape Into wherein the doping concentration of GaAs is 1 × 1017~1 × 1018cm-3, the contact electrode layer 10 is p-type heavy doping GaAs Layer.
Additionally, back of the body electric field layer 4 and substrate are also disposed between the cushion 3 and the separation layer 6 from down to up Layer 5, the back of the body electric field layer 4 is gallium arsenide layer, and the basalis 5 is arsenide layers, the emission layer 8 and the electrode contact Window layer 9 is additionally provided between layer 10, the Window layer 9 is p-type undoped gallium arsenide aluminium lamination, also including back electrode 1 and positive electrode 11, the back electrode 1 be located at the substrate layer bottom, the positive electrode 11 be located at the top of the contact electrode layer 10, it is described just Electrode 11 and the back electrode 1 are metal electrode, can be formed using suitable mode commonly used in the art.
The preparation method of the above-mentioned quantum dot solar cell based on drop epitaxy technology is comprised the following steps：
(1) substrate layer 2 is provided；
(2) grown buffer layer 3 on the substrate layer 2, the thickness of the cushion 3 is 100nm, and growth temperature is 600 ℃；
(3) back of the body electric field layer 4 is grown on the cushion 3, the thickness of the back of the body electric field layer 4 is 30nm, and growth temperature is 580℃；
(4) the growth substrate layer 5 on the back of the body electric field layer 4, the thickness of the basalis 5 is 500nm；
(5) separation layer 6 is grown on the basalis 5, the thickness of the separation layer 6 is 50nm；
(6) the quantum-dot structure layer 7 in multiple cycles is grown on the separation layer 6, each of which cycle includes at least one Layer quantum dot layer 71, one layer of first wall 72, one layer of second wall 73, the quantum dot layer 71 is given birth to for drop epitaxy method It is long to be formed；The thickness of the first described wall 71 is 10nm, and growth temperature is 400 DEG C；The thickness of second wall 72 It is 40nm, growth temperature is 590 DEG C；
(7) emission layer 8 is formed on quantum-dot structure layer 7, the thickness of the emission layer 8 is 200nm, growth temperature It is 500 DEG C；
(8) Window layer 9 is formed on the emission layer 8, the thickness of the Window layer 9 is 30nm；
(9) contact electrode layer 10 is formed in the Window layer 9, the thickness of the contact electrode layer 10 is 50nm, growth Temperature is 400 DEG C；
(10) annealed under 400~800 DEG C of condition of nitrogen gas；
(11) positive electrode 11 is formed on the contact electrode layer 10, back electrode 1 is formed under the substrate layer 2；
(12) annealed under 350~400 DEG C of condition of nitrogen gas, annealed using quick anneal oven.
In order to verify the technique effect of technical scheme, on the basis of the requirement of above-mentioned specific embodiment, use Design parameter carries out verification experimental verification, obtains specific examples below.
Embodiment 1
A kind of quantum dot solar cell based on drop epitaxy technology described in the present embodiment, including from down to up successively The back electrode 1 of setting, substrate layer 2, cushion 3, back of the body electric field layer 4, basalis 5, separation layer 6, the quantum-dot structure in multiple cycles Layer 7, emission layer 8, Window layer 9, contact electrode layer 10, positive electrode 11, each week of the quantum-dot structure layer 7 in the multiple cycle Phase includes 71, one layer first of at least one of which quantum dot layer, 72, one layer second of wall wall 73, and the quantum dot layer 71 is liquid Drop epitaxy method grows to be formed, and the periodicity of the quantum-dot structure layer 7 in multiple cycles is 2.
Wherein, quantum dot layer 71 is gallium arsenide quanta point layer, and first wall 72 is N-shaped undoped gallium arsenide aluminium lamination, Second wall 73 is undoped p arsenide layers, and substrate layer 2 is N-shaped heavy doping gallium arsenide single-crystal wafer, the cushion 3 It is N-shaped heavy doping gallium arsenide layer, the back of the body electric field layer 4 is gallium arsenide layer, the basalis 5 is arsenide layers, the isolation Layer 6 is arsenide layers, and the emission layer 8 is p-type undoped gallium arsenide aluminium lamination, and the doping concentration of GaAs is 1 × 1017~1 × 1018cm-3, the Window layer 9 is p-type undoped gallium arsenide aluminium lamination, and the contact electrode layer 10 is p-type heavy doping gallium arsenide layer, institute Positive electrode 11 is stated for metal electrode, the back electrode 1 is titanium alloy.
The preparation method of the above-mentioned quantum dot solar cell based on drop epitaxy technology is comprised the following steps：
(1) substrate layer 2 is provided；
(2) grown buffer layer 3 on the substrate layer 2, the thickness of the cushion 3 is 100nm, and growth temperature is 600 ℃；
(3) back of the body electric field layer 4 is grown on the cushion 3, the thickness of the back of the body electric field layer 4 is 30nm, and growth temperature is 580℃；
(4) the growth substrate layer 5 on the back of the body electric field layer 4, the thickness of the basalis 5 is 500nm；
(5) separation layer 6 is grown on the basalis 5, the thickness of the separation layer 6 is 50nm；
(6) the quantum-dot structure layer 7 in multiple cycles is grown on the separation layer 6, each of which cycle includes at least one Layer quantum dot layer 71, one layer of first wall 72, one layer of second wall 73, the quantum dot layer 71 is given birth to for drop epitaxy method It is long to be formed；The thickness of the first described wall 72 is 10nm, and growth temperature is 400 DEG C；The thickness of second wall 73 It is 40nm, growth temperature is 590 DEG C；
(7) emission layer 8 is formed on quantum-dot structure layer 7, the thickness of the emission layer 8 is 200nm, growth temperature It is 500 DEG C；
(8) Window layer 9 is formed on the emission layer 8, the thickness of the Window layer 9 is 30nm；
(9) contact electrode layer 10 is formed in the Window layer 9, the thickness of the contact electrode layer 10 is 50nm, growth Temperature is 400 DEG C；
(10) annealed under 600 DEG C of condition of nitrogen gas；
(11) positive electrode 11 is formed on the contact electrode layer 10, back electrode 1 is formed under the substrate layer 2；
(12) annealed under 380 DEG C of condition of nitrogen gas, annealed using quick anneal oven.
The quantum dot solar cell based on drop epitaxy technology described in the present embodiment, conversion efficiency is 8.9%.
Embodiment 2
A kind of quantum dot solar cell based on drop epitaxy technology described in the present embodiment exists with the difference of embodiment 1 In：Quantum dot layer 71 is Gallium indium arsenide quantum dot layer, and substrate layer 2 is semi-insulating p type gallium arensidep single-chip, the back electrode 1 It is billon.
Remaining is same as Example 1.
The quantum dot solar cell based on drop epitaxy technology described in the present embodiment, conversion efficiency is 8.1%.
Embodiment 3
A kind of quantum dot solar cell based on drop epitaxy technology described in the present embodiment exists with the difference of embodiment 1 In：The back electrode 1 is titanium alloy.
Remaining is same as Example 1.
The quantum dot solar cell based on drop epitaxy technology described in the present embodiment, conversion efficiency is 9.1%.
Embodiment 4
A kind of quantum dot solar cell based on drop epitaxy technology described in the present embodiment exists with the difference of embodiment 1 In：(not shown in figure, periodicity is quantum-dot structure in 10 i.e. Fig. 1 to the periodicity of the quantum-dot structure layer 7 in multiple cycles for 10 Layer has 10 layers).
Remaining is same as Example 1.
The quantum dot solar cell based on drop epitaxy technology described in the present embodiment, conversion efficiency is 12%.
Embodiment 5
A kind of quantum dot solar cell based on drop epitaxy technology described in the present embodiment exists with the difference of embodiment 1 In：The thickness of cushion 3 is 80nm, and growth temperature is 550 DEG C；The thickness of back of the body electric field layer 4 is 10nm, and growth temperature is 550 DEG C； The thickness of basalis 5 is 450nm；The thickness of separation layer 6 is 20nm；The thickness of the first wall 72 is 5nm, and growth temperature is 350℃；The thickness of the second wall 73 is 20nm, and growth temperature is 550 DEG C；The thickness of emission layer 8 is 150nm, growth temperature It is 450 DEG C；The thickness of Window layer 9 is 10nm；The thickness of contact electrode layer 10 is 20nm, and growth temperature is 350 DEG C.
Remaining is same as Example 1.
The quantum dot solar cell based on drop epitaxy technology described in the present embodiment, conversion efficiency is 9.0%.
Embodiment 6
A kind of quantum dot solar cell based on drop epitaxy technology described in the present embodiment exists with the difference of embodiment 1 In：The thickness of cushion 3 is 150nm, and growth temperature is 650 DEG C；The thickness of back of the body electric field layer 4 is 50nm, and growth temperature is 650 ℃；The thickness of basalis 5 is 550nm；The thickness of separation layer 6 is 80nm；The thickness of the first wall 72 is 15nm, growth temperature It is 450 DEG C；The thickness of the second wall 73 is 60nm, and growth temperature is 620 DEG C；The thickness of emission layer 8 is 250nm, growth temperature Spend is 550 DEG C；The thickness of Window layer 9 is 50nm；The thickness of contact electrode layer 10 is 80nm, and growth temperature is 450 DEG C.
Remaining is same as Example 1.
The quantum dot solar cell based on drop epitaxy technology described in the present embodiment, conversion efficiency is 7.3%.
Embodiment 7
A kind of quantum dot solar cell based on drop epitaxy technology described in the present embodiment exists with the difference of embodiment 1 In：Step (10) is annealed under 800 DEG C of condition of nitrogen gas, and step (12) is annealed under 400 DEG C of condition of nitrogen gas.
Remaining is same as Example 1.
The quantum dot solar cell based on drop epitaxy technology described in the present embodiment, conversion efficiency is 9.1%.
Embodiment 8
A kind of quantum dot solar cell based on drop epitaxy technology described in the present embodiment exists with the difference of embodiment 1 In：Step (10) is annealed under 400 DEG C of condition of nitrogen gas, and step (12) is annealed under 350 DEG C of condition of nitrogen gas.
Remaining is same as Example 1.
The quantum dot solar cell based on drop epitaxy technology described in the present embodiment, conversion efficiency is 8.0%.
The above is only the preferred embodiment of the present invention, it is noted that it is right that above-mentioned preferred embodiment is not construed as Limitation of the invention, protection scope of the present invention should be defined by claim limited range.For the art For those of ordinary skill, without departing from the spirit and scope of the present invention, some improvements and modifications can also be made, these change Enter and retouch and also should be regarded as protection scope of the present invention.

Claims (10)

1. a kind of quantum dot solar cell based on drop epitaxy technology, it is characterised in that：The quantum dot solar cell Including the substrate layer, cushion, separation layer, quantum-dot structure layer, emission layer, the electrode in multiple cycles that set gradually from down to up Contact layer, each cycle of the quantum-dot structure layer in the multiple cycle includes at least one of which quantum dot layer, one layer of first interval Layer, one layer of second wall, the quantum dot layer grow to be formed for drop epitaxy method.
2. a kind of quantum dot solar cell based on drop epitaxy technology according to claim 1, it is characterised in that：Institute Quantum dot layer is stated for III-V quantum dot layer, first wall is N-shaped undoped gallium arsenide aluminium lamination, described second Wall is undoped p arsenide layers.
3. a kind of quantum dot solar cell based on drop epitaxy technology according to claim 2, it is characterised in that：Institute It is Gallium indium arsenide quantum dot layer or gallium arsenide quanta point layer to state III-V quantum dot layer.
4. a kind of quantum dot solar cell based on drop epitaxy technology according to claim 1, it is characterised in that：Institute The periodicity for stating the quantum-dot structure layer in multiple cycles is not less than 2.
5. a kind of quantum dot solar cell based on drop epitaxy technology according to claim 1, it is characterised in that：Institute Substrate layer is stated for N-shaped gallium arsenide single-crystal wafer or semi-insulating p type gallium arensidep single-chip, the cushion is gallium arsenide layer, the isolation Layer is arsenide layers, and the emission layer is p-type undoped gallium arsenide aluminium lamination, and the contact electrode layer is p-type heavy doping GaAs Layer.
6. a kind of quantum dot solar cell based on drop epitaxy technology according to claim 1, it is characterised in that：Institute State and be also disposed with back of the body electric field layer and basalis between cushion and the separation layer from down to up, the back of the body electric field layer is arsenic Change gallium layer, the basalis is arsenide layers.
7. a kind of quantum dot solar cell based on drop epitaxy technology according to claim 1, it is characterised in that：Institute State and Window layer is additionally provided between emission layer and the contact electrode layer, the Window layer is p-type undoped gallium arsenide aluminium lamination.
8. a kind of quantum dot solar cell based on drop epitaxy technology according to claim 1, it is characterised in that：Institute Stating quantum dot solar cell also includes back electrode and positive electrode, and the back electrode is located at the substrate layer bottom, the positive electricity Pole is located at the contact electrode layer top.
9. a kind of preparation method of the quantum dot solar cell based on drop epitaxy technology, it is characterised in that：The preparation side Method is comprised the following steps：
(1) substrate layer is provided, the substrate layer is N-shaped gallium arsenide single-crystal wafer or semi-insulating p type gallium arensidep single-chip；
(2) grown buffer layer on the substrate layer, the cushion is gallium arsenide layer；
(3) back of the body electric field layer is grown on the cushion, the back of the body electric field layer is gallium arsenide layer；
(4) the growth substrate layer on the back of the body electric field layer, the basalis is arsenide layers；
(5) separation layer is grown on the basalis, the separation layer is arsenide layers；
(6) the quantum-dot structure layer in multiple cycles is grown on the separation layer, each of which cycle includes at least one of which quantum Point layer, one layer of first wall, one layer of second wall, the quantum dot layer grows to be formed for drop epitaxy method；Described The thickness of the first wall is 5~15nm, and growth temperature is 350~450 DEG C；The thickness of second wall be 20~ 60nm, growth temperature is 550~620 DEG C；
(7) emission layer is formed on quantum-dot structure layer, the emission layer is p-type undoped gallium arsenide aluminium lamination；
(8) Window layer is formed on the emission layer, the Window layer is p-type undoped gallium arsenide aluminium lamination；
(9) contact electrode layer is formed in the Window layer, the contact electrode layer is p-type heavy doping gallium arsenide layer；
(10) annealed under 400~800 DEG C of condition of nitrogen gas；
(11) positive electrode is formed on the contact electrode layer, back electrode is formed under the substrate layer；
(12) annealed under 350~400 DEG C of condition of nitrogen gas.
10. the preparation method of a kind of quantum dot solar cell based on drop epitaxy technology according to claim 9, its It is characterised by：The thickness of the cushion is 80~150nm, and growth temperature is 450~550 DEG C；The thickness of the back of the body electric field layer It is 10~50nm, growth temperature is 550~650 DEG C；The thickness of the basalis is 450~550nm；The thickness of the separation layer It is 20~80nm；The thickness of the emission layer is 150~250nm, and growth temperature is 450~550 DEG C；The thickness of the Window layer It is 10~50nm；The thickness of the contact electrode layer is 20~80nm, and growth temperature is 350~450 DEG C.
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