CN106935514A - 一种集成电路igbt芯片导热硅脂的涂布方法 - Google Patents
一种集成电路igbt芯片导热硅脂的涂布方法 Download PDFInfo
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- CN106935514A CN106935514A CN201511009214.6A CN201511009214A CN106935514A CN 106935514 A CN106935514 A CN 106935514A CN 201511009214 A CN201511009214 A CN 201511009214A CN 106935514 A CN106935514 A CN 106935514A
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- silicone grease
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- 239000004519 grease Substances 0.000 title claims abstract description 35
- 229920001296 polysiloxane Polymers 0.000 title claims abstract description 35
- 238000000576 coating method Methods 0.000 title claims abstract description 7
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims abstract description 4
- 244000007853 Sarothamnus scoparius Species 0.000 claims abstract description 4
- 239000000945 filler Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 229920002545 silicone oil Polymers 0.000 description 2
- 239000011800 void material Substances 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000037361 pathway Effects 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4871—Bases, plates or heatsinks
- H01L21/4882—Assembly of heatsink parts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3737—Organic materials with or without a thermoconductive filler
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
一种集成电路IGBT芯片导热硅脂的涂布方法，包括以下步骤:(1)IGBT安装前,用酒精将器件的安装面和散热器清洗干净;(2)将导热硅脂倒入容器内,用滚筒刷粘上导热硅脂;(3)在IGBT的安装面反复滚刷上一层导热硅脂,目测硅脂是否涂满IGBT安装面,最后再将IGBT安装在散热器上。
Description
技术领域
本发明涉及一种集成电路IGBT芯片导热硅脂的涂布方法。
背景技术
导热硅脂目前被广泛使用在散热器上的IGBT安装面上,其目的在于填补各器件安装面与散热器之间的间隙,达到更均匀、更有效的散热效果,避免器件温度过高而损坏。为保证导热硅脂均匀的分布在IGBT上,其涂敷工艺至关重要。导热硅脂散热性能导热硅脂成份为硅油和填料。填料为磨得很细的粉末,成分为ZnO/Al2O3/氮化硼/碳化硅/铝粉等。硅油保证了一定的流动性,而填料填充了IGBT和散热器之间的微小空隙,保证了导热性。
散热片与IGBT之间传热主要通过传导途径,通过散热片与IGBT之间的直接接触实现。导热硅脂的意义在于填充二者之间的空隙接触处更加完全。如果硅脂使用过量,在IGBT和散热片之间形成一个硅脂层,则散热途径变为IGBT硅脂散热片。由于硅脂的导热系数约为=1~2W/(mK),而铝合金的散热片在300W/(mK)以上,在此情况下硅脂成了阻碍传热的因素。因此涂抹硅脂一定要适量,在IGBT上涂上薄薄一层就可以了,目前导热硅脂的厚度要求约100~150m(IGBT和散热器表面粗燥度要求Ra6.3m,平面度100m/100mm)。
发明内容
一种集成电路IGBT芯片导热硅脂的涂布方法，包括以下步骤:(1)IGBT安装前,用酒精将器件的安装面和散热器清洗干净;(2)将导热硅脂倒入容器内,用滚筒刷粘上导热硅脂;(3)在IGBT的安装面反复滚刷上一层导热硅脂,目测硅脂是否涂满IGBT安装面,最后再将IGBT安装在散热器上。
具体实施方式
一种集成电路IGBT芯片导热硅脂的涂布方法，包括以下步骤:(1)IGBT安装前,用酒精将器件的安装面和散热器清洗干净;(2)将导热硅脂倒入容器内,用滚筒刷粘上导热硅脂;(3)在IGBT的安装面反复滚刷上一层导热硅脂,目测硅脂是否涂满IGBT安装面,最后再将IGBT安装在散热器上。
Claims (1)
1.一种集成电路IGBT芯片导热硅脂的涂布方法，包括以下步骤:(1)IGBT安装前,用酒精将器件的安装面和散热器清洗干净;(2)将导热硅脂倒入容器内,用滚筒刷粘上导热硅脂;(3)在IGBT的安装面反复滚刷上一层导热硅脂,目测硅脂是否涂满IGBT安装面,最后再将IGBT安装在散热器上。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201511009214.6A CN106935514A (zh) | 2015-12-30 | 2015-12-30 | 一种集成电路igbt芯片导热硅脂的涂布方法 |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201511009214.6A CN106935514A (zh) | 2015-12-30 | 2015-12-30 | 一种集成电路igbt芯片导热硅脂的涂布方法 |
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| CN106935514A true CN106935514A (zh) | 2017-07-07 |
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| CN201511009214.6A Pending CN106935514A (zh) | 2015-12-30 | 2015-12-30 | 一种集成电路igbt芯片导热硅脂的涂布方法 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107611108A (zh) * | 2017-08-31 | 2018-01-19 | 西安龙腾新能源科技发展有限公司 | 功率半导体单管的封装方法 |
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- 2015-12-30 CN CN201511009214.6A patent/CN106935514A/zh active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107611108A (zh) * | 2017-08-31 | 2018-01-19 | 西安龙腾新能源科技发展有限公司 | 功率半导体单管的封装方法 |
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Application publication date: 20170707 |
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