CN106929796A - Discrete multianode bell-jar ion nitriding furnace - Google Patents

Discrete multianode bell-jar ion nitriding furnace Download PDF

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Publication number
CN106929796A
CN106929796A CN201710310512.1A CN201710310512A CN106929796A CN 106929796 A CN106929796 A CN 106929796A CN 201710310512 A CN201710310512 A CN 201710310512A CN 106929796 A CN106929796 A CN 106929796A
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furnace
circuit
bonnet
bell
output end
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CN201710310512.1A
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CN106929796B (en
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卢金生
王栋
李大磊
张银霞
徐广涛
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Zhengzhou University
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Zhengzhou University
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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/06Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
    • C23C8/36Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases using ionised gases, e.g. ionitriding
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/06Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
    • C23C8/08Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases only one element being applied
    • C23C8/24Nitriding

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Solid-Phase Diffusion Into Metallic Material Surfaces (AREA)
  • Furnace Details (AREA)

Abstract

The invention discloses a kind of discrete multianode bell-jar ion nitriding furnace, including bell-jar body of heater and ion pulse power supply;Bell-jar body of heater is made up of base of furnace body, furnace tube, bonnet, the cathode disc that is arranged on by insulated leg bottom of furnace body;Body of heater is combined and constituted by bonnet and more piece furnace tube;Bonnet and often section furnace tube furnace wall be made up of the outer wall of water cooling sandwich structure, inwall, heat screen and glow discharge anode successively from the outside to the core;The glow discharge anode of bonnet and often section furnace tube is separate, the cathode output end connection corresponding with ion pulse power supply respectively of each glow discharge anode, body of heater negative electrode is connected with the cathode output end of ion pulse power supply, bonnet and often the outer wall electrical grounding of section furnace tube;Thermocouple is provided with bonnet and the often furnace wall of section furnace tube.The invention has the advantages that effectively improving the temperature homogeneity during longaxones parts ionic nitriding, it is ensured that the quality of longaxones parts ionic nitriding.

Description

Discrete multianode bell-jar ion nitriding furnace
Technical field
The present invention relates to bell-jar ion nitriding furnace, more particularly, to discrete multianode bell-jar ion nitriding furnace.
Background technology
Glow discharge nitriding because nitriding speed is fast, case hardness is high, fragility is small, it is antifatigue, deform small, energy-conserving and environment-protective etc. Advantage is widely used in accurate key member Surface hardened layer, such as gear, axle, screw rod, machine part, mould, metallurgical machinery Deng.
During ionic nitriding, the current density of workpiece surface glow discharge is uneven, generally 0.5 ~ 5 mA/ cm2, electric current distribution feature is:It is big near the lower current density of cathode disc and top is smaller.The electric current of glow discharge is close Degree is relevant with many factors such as gas pressure, gas ingredients, temperature, surface conductivity, Anode-cathode Distance.
Non-uniform temperature is determined by the heating and radiating feature of glow discharge nitriding part during glow discharge nitriding.When part exists When the heat and dispersed heat obtained in unit interval are lucky equal at a certain temperature, the temperature is just equilibrium temperature;And Non-uniform temperature is that part equilibrium temperature everywhere is different.
Glow discharging heating includes three kinds of energy conversions, electric energy → ion, the heat energy of the kinetic energy → part of neutral atom.Cause The size of this current density is that part obtains the how many outstanding feature of heat.Electric discharge is mainly determined by cathode fall area, but is gone back It is limited by the influence of following factor:
1st, Anode-cathode Distance:When the timing of cathode voltage one, cathode fall are relatively low, the energy of ion and neural gas particles is smaller, The temperature of part is relatively low.Anode-cathode Distance is different, piece surface current density everywhere be also it is discrepant, this difference with The increase of furnace pressure and increase;When Anode-cathode Distance is more greatly different, or furnace pressure it is higher when, this influence factor is often to cause temperature The uneven main cause of degree.
2nd, gas componant is uneven:When directly making source of the gas with ammonia, because ammonia is progressively ionized in flow process in stove Decompose, so the gas phase composition in stove from top to bottom is gradually changed.
3rd, gas flowing is uneven:The flow velocity difference that gas flows through piece surface can cause partial pressure and gas density Fluctuation, this will result in the fluctuation of current density.
4th, on part due to aura overlap, current density increase causes so-called aura to concentrate to groove, aperture, these Place is heated up quickly, and it is normally local that temperature will be above aura.
5th, influence of " form effect " of part to temperature:On the equally distributed part of aura, different parts or one The surface area of the different parts of part is different from weight ratio.Surface area is big with weight ratio, it is meant that what it was obtained adds Thermal energy is more, and these places are heated up comparatively fast, and also the specific surface area part small with weight ratio is high for finally stabilised equilibrium temperature.
In sum, the factor of influence ion nitriding furnace temperature uniformity is a lot, interacts, intricate.And nitriding When piece surface temperature uniformity everywhere be the key factor for ensureing nitriding layer quality and Reducing distortion, for major axis class zero Part nitriding, temperature low energy high differs tens degree of even upper Baidu when serious, causes the upper and lower hardness of longaxones parts to have height to have low, Nitriding layer is deep mixed, deforms overproof.
The content of the invention
Present invention aim at a kind of discrete multianode bell-jar ion nitriding furnace is provided, to improve existing major axis class zero The upper and lower temperature unevenness produced during part ionic nitriding, solves nitration case hardness, the depth difference of major axis class nitridation part Larger problem.
To achieve the above object, the present invention takes following technical proposals:
Discrete multianode bell-jar ion nitriding furnace of the present invention, including be provided with air inlet and gas outlet bell-jar body of heater and Ion pulse power supply;The bell-jar body of heater by base of furnace body, the furnace tube being arranged on the base of furnace body, bonnet, by exhausted Edge bearing is arranged on the cathode disc composition of bottom of furnace body;The body of heater is combined by bonnet and more piece furnace tube and constituted;The bonnet With every furnace wall for saving furnace tube from the outside to the core successively by the outer wall of water cooling sandwich structure, inwall, heat screen and glow discharge anode unit Into;Bonnet and often section furnace tube the glow discharge anode it is separate, each glow discharge anode respectively with the ion arteries and veins The corresponding cathode output end connection of power supply is rushed, the body of heater negative electrode is connected with the cathode output end of ion pulse power supply, stove Cover and often the outer wall electrical grounding of section furnace tube;Thermocouple is provided with bonnet and the often furnace wall of section furnace tube.
The ion pulse power supply controls two three of trigger angle including three-phase rectifier transformer, by phase-shift trigger circuit Phase half-controlled bridge type circuit, LC filtering accumulator, chopper unit;The primary side winding of the three-phase rectifier transformer intersects with three Stream power supply connection, secondary is two groups of three-phase windings, is connected by Yny0/y6 connections respectively, vice-side winding described in every group respectively with A corresponding three-phase half-controlled bridge-type rectification circuit input end connection, the three-phase half-controlled bridge-type rectification circuit string described in two Be connected with LC filtering energy storage circuit input ends after connection, the output end of LC filtering accumulators is parallel with one another with multiple described Chopper unit input is connected, and the cathode output end of each chopper unit is positive with corresponding one glow discharge respectively Pole connects;The input control end of the phase-shift trigger circuit is connected with the output control terminal of pi regulator, the pi regulator Signal input part is connected with the signal output part of voltage Setting signal and voltage sensor, the signal input of the voltage sensor Hold and be connected with the output end of LC filtering accumulators.
The chopper unit is by copped wave and buffer circuit, IGBT drive circuit, pwm control circuit circuit, manual or PID Temperature controller, beat arc signal acquisition module and over-current signal acquisition module composition;The copped wave and the cathode output end of buffer circuit With the corresponding one glow discharge anode connection, the cathode output end of copped wave and buffer circuit connects with the body of heater negative electrode Connect, the input of copped wave and buffer circuit is connected with the output end of LC filtering accumulators;It is described to beat arc signal acquisition mould Block is connected with the fly-wheel diode two ends of buffer circuit, and the signal of over-current signal acquisition module takes from Hall current sensor, beats Arc signal acquisition module, over-current signal acquisition module, the signal output part of the manual or PID temperature controllers are controlled with the PWM The signal input part connection of circuit, the signal output part of pwm control circuit is switched by IGBT drive circuit with chopper unit The control end connection of element insulating grid bipolar transistor IGBT, the signal input part and corresponding of manual or PID temperature controllers Individual thermocouple signal connection.
The copped wave and buffer circuit are main by insulated gate bipolar transistor IGBT and air-core reactor Lk1Constitute;It is described The colelctor electrode C-terminal of insulated gate bipolar transistor IGBT is connected with the output end of LC filtering accumulators, buffer resistance R26, buffering electric capacity C24, catching diode D11 constitute discharge and recharge type buffer circuit, described buffering electric capacity C24 one end and insulated gate The colelctor electrode C-terminal connection of bipolar transistor IGBT, and the other end and the catching diode D11 anodes and the buffer resistance One end connection of R26, the other end of buffer resistance R26 and the negative electrode and insulated gate bipolar transistor of catching diode D11 The emitter E end connection of IGBT;Using the clamped transient voltages of fast diode D11, concussion can be suppressed and occurred;RC time constants are The 1/3 of switch periods, to ensure to buffer the peak voltage energy absorbed on electric capacity C24 in each switch periods by buffering electricity Resistance R26 bleeds off;
Resistance R25, electric capacity C23, diode D10 constitute electric discharge prevention type buffer circuit, can suppress to turn off surge voltage, delay Rush loss and the very little of circuit;Insulated gate bipolar transistor IGBT is connected to after the electric capacity C23, diode D10 series connection Between colelctor electrode C-terminal and emitter E end, the anode of diode D10 is connected through the resistance R25 with the power cathode;
Diode D9 is fly-wheel diode, for absorbing the back-pressure formed due to distributed inductance in output loading loop, electric capacity C22 and resistance R24 composition resistance capaciting absorpting circuits carry out overvoltage protection to diode D9 two ends;
Arc, anode and cathode short circuit are played in order to suppress the climbing of electric current and appearance after insulated gate bipolar transistor IGBT is turned on now As when, can have sufficient detection time, current limliting of having connected in the loop hollow inductor Lk1;In order in discharging each cycle Conducting phase current limliting hollow inductor Lk1In stored energy, there is provided being released by the electric current that diode D12, resistance R29 are constituted Road is put back to, resistance R29 is the power resistor of resistance very little, current limliting hollow inductor L is bled off in each pulse periodk1In energy Amount;By current limliting hollow inductor Lk1Element suppresses the current-rising-rate of insulated gate bipolar transistor IGBT, realizes to insulation The overcurrent protection of grid bipolar transistor IGBT;
The emitter E end of insulated gate bipolar transistor IGBT is by by resistance R29, current limliting hollow inductor Lk1The electricity of series connection Road connects with a corresponding glow discharge anode, equipped with Hall current sensor SHA to electric current on its output anode main line Signal is acquired.
The advantage of the invention is that take the glow discharge anode subregion of the bell-jar ion nitriding furnace is arranged, and The regulation of glow current density is carried out independently of one another, therefore effectively improves the temperature during longaxones parts ionic nitriding Degree uniformity, it is ensured that the quality of longaxones parts ionic nitriding.
Brief description of the drawings
Fig. 1 is the structural representation of bell-jar body of heater of the present invention.
Fig. 2 is the schematic block circuit diagram of ion power supply of the present invention.
Fig. 3 is the circuit theory diagrams of ion power supply of the present invention.
Fig. 4 is the circuit theory diagrams of chopper unit of the present invention.
Specific embodiment
Embodiments of the invention are elaborated below in conjunction with the accompanying drawings, the present embodiment is with technical solution of the present invention as preceding Put and implemented, give detailed implementation method and specific operating process, but protection scope of the present invention is not limited to down State embodiment.
As shown in figure 1, discrete multianode bell-jar ion nitriding furnace of the present invention, including it is provided with air inlet 1 and outlet The bell-jar body of heater and ion pulse power supply of mouth 2;Bell-jar body of heater by base of furnace body 3, the furnace tube being arranged on base of furnace body 3, Bell jar, the cathode disc 5 for being arranged on bottom of furnace body by insulated leg 4 are constituted;Body of heater is by bonnet 6 and more piece furnace tube 7 by O-shaped close The seal combination of seal 8 is constituted;Bonnet 6 and the often furnace wall of section furnace tube 7 are from the outside to the core successively by the outer wall of water cooling sandwich structure, interior Wall, heat screen 9, anode canister 10 and anode power transmission rod 11 are constituted, and each anode canister 10 is separate, therefore bonnet 6 and often save stove Cylinder 7 the current potential of glow discharge anode canister 10 on it is separate, each glow discharge anode canister 10 respectively with ion pulse power supply pair The cathode output end answered is connected, and cathode disc 5 is connected by cathode rod 12 with the cathode output end of ion pulse power supply, bonnet 6 and often save furnace tube 7 outer wall electrical grounding;Through bonnet 6 and often the furnace wall of section furnace tube 7 is provided with thermocouple 13.
As shown in Figure 2,3, 4, the ion pulse power supply is including three-phase rectifier transformer TM, by phase-shift trigger circuit control Two three-phase half-controlled bridge-type circuits of trigger angle, LC filtering accumulator, chopper unit 14;Three-phase rectifier transformer TM's Primary side winding is connected with 380V/50Hz three-phase alternating-current supplies, and vice-side winding is two groups of three-phase windings, respectively by Yny0/y6 connections Connection, every group of vice-side winding is connected with corresponding three-phase half-controlled bridge-type rectification circuit input end respectively, two three-phase half-controlleds It is connected with LC filtering energy storage circuit input ends after bridge rectifier series connection, the output end of LC filtering accumulators is mutual with multiple The input of chopper unit 14 connection in parallel, the number of chopper unit 14 is equal with the quantity of glow discharge anode canister 10, The cathode output end of each chopper unit 14 is connected with a corresponding anode power transmission rod 11 respectively;Phase-shift trigger circuit it is defeated Enter control end to be connected with the output control terminal of pi regulator, signal input part and voltage Setting signal and the voltage of pi regulator The signal output part connection of sensor, the signal input part of voltage sensor is connected with the output end of LC filtering accumulators.
The chopper unit 14 is by copped wave and buffer circuit, IGBT drive circuit, pwm control circuit, manual or PID temperature Control device, beat arc signal acquisition module and over-current signal acquisition module composition;The cathode output end of copped wave and buffer circuit with it is corresponding A glow discharge anode 11 connect, the cathode rod 12 that the cathode output end of copped wave and buffer circuit is connected with cathode disc 5 connects Connect, the input of copped wave and buffer circuit is connected with the output end of LC filtering accumulators;Arc signal acquisition module is beaten with buffering The fly-wheel diode two ends connection of circuit, the signal of over-current signal acquisition module takes from Hall current sensor, beats arc signal and adopt Collection module, over-current signal acquisition module, the signal output part and the signal input part of pwm control circuit of manual or PID temperature controllers Connection, the signal output part of pwm control circuit is by IGBT drive circuit and chopper unit switch element insulated gate bipolar The control end connection of transistor IGBT, the signal input part of manual or PID temperature controllers is connected with a corresponding thermocouple signal.
As shown in figure 4, the copped wave and buffer circuit are main by insulated gate bipolar transistor IGBT and hollow inductor Lk1Constitute;The colelctor electrode C-terminal of insulated gate bipolar transistor IGBT is connected with the output end of LC filtering accumulators, buffers Resistance R26, buffering electric capacity C24, catching diode D11 constitute discharge and recharge type buffer circuit, buffer electric capacity C24 one end and insulated gate The colelctor electrode C-terminal connection of bipolar transistor IGBT, and the one of the other end and catching diode D11 anodes and buffer resistance R26 End connection, the other end of buffer resistance R26, the transmitting of the negative electrode and insulated gate bipolar transistor IGBT of catching diode D11 Pole E ends connect;Using the clamped transient voltages of fast diode D11, concussion can be suppressed and occurred;RC time constants are switch periods 1/3, to ensure that buffer the peak voltage absorbed on electric capacity C24 is bled off in each switch periods by buffer resistance R26.
Resistance R25, electric capacity C23, diode D10 constitute electric discharge prevention type buffer circuit, can suppress shut-off surge electricity Pressure, the loss of buffer circuit and very little;Insulated gate bipolar transistor IGBT is connected to after electric capacity C23, diode D10 series connection Between colelctor electrode C-terminal and emitter E end, the anode of diode D10 is connected through the cathode rod 12 that resistance R25 is connected with cathode disc 5.
Arc, positive and negative extremely short is beaten in order to limit the climbing of electric current and appearance after insulated gate bipolar transistor IGBT conducting During the phenomenon of road, there can be sufficient detection time, current limliting of having connected in the loop hollow inductor Lk1;In order to discharge current limliting hollow Inductor Lk1In stored energy, in current limliting hollow inductor Lk1Discharge loop in coupled resistance very little power electricity Resistance R29 and fast diode D12, constitutes loop, and current limliting hollow inductor L is bled off in each pulse periodk1In energy;Pass through Current limliting hollow inductor Lk1Element suppresses the current changing rate of insulated gate bipolar transistor IGBT, completes to insulated gate bipolar The overcurrent protection of transistor IGBT.
The emitter E end of insulated gate bipolar transistor IGBT is by by resistance R29 and current limliting hollow inductor Lk1Composition Series circuit connected with a corresponding anode rod 11, its export main line on be equipped with Hall current sensor SHA.
Operation principle of the present invention is summarized as follows:
After 380V/50Hz three-phase four-wire systems AC networks is accessed, first pass through three-phase rectifier transformer TM and realize isolating with power network And transformation, winding connection mode is Yny0/y6 connections, it is possible to reduce the harmonic wave after rectification, adjustment voltage gives, can with open loop or The output of closed-loop control commutating voltage, accesses phase-shift trigger circuit, then put by final stage after proportional integral regulation comprehensive magnification Big circuit, the phase shift for driving IGCT T1, T2, T3, T4, T5, T6 turn on, filter and accumulator by Large Copacity flat ripple Reactor Lt and pulsed capacitance C23 is constituted, and makes voltage steady and energy storage, and filtered DC voltage accesses multiple parallel with one another Chopper unit 14.
The control mode of chopper unit 14 is fixed frequency modulated PWM control, and the control of conduction ratio manual open-loop regulation or can pass through The output signal of PID temperature controllers realizes that closed loop is adjusted.
The thermocouple 13 in each area provides temperature signal in body of heater, and arc signal, chopper circuit output are beaten in buffer circuit collection End collection over-current signal, sends into pwm control circuit, when there is arc light(Beat arc)When electric discharge or excessively stream, body of heater yin, yang electrode current Rise, voltage declines, voltage reduction signal up to the pulse width that current period is closed or reduced during certain value is taken, to ion power supply Protected;When beating arc and being violent, when electric current rises to certain value, the signal measured by Hall current sensor SHA, shut-off The drive signal of insulated gate bipolar transistor IGBT, so as to realize protection.Pwm control signal is transferred to by light-coupled isolation IGBT drive circuit, controls the discharge and recharge of insulated gate bipolar transistor IGBT grid G, and there is IGBT drive circuit excessively stream to protect The defencive functions such as shield, drop grid voltage soft switching.
The negative pole of each chopper unit is negative electrode common port, with the equipotential of workpiece in stove 15;Each chopper unit Positive pole accesses a corresponding glow discharge anode canister 10, because each glow discharge anode 10 is separate, therefore the He of bonnet 6 Often the glow discharge anode canister 10 of section furnace tube 7 is separate, and body of heater workspace is divided into multiple glow discharge field areas, each The current density in region can be with separately adjustable, and temperature is individually controlled, and realizes the closed-loop control of each zone temperature.
Manual/auto selecting switch decides the control mode of PID temperature controllers, when the switch is in MANUAL CONTROL mode When, conduction ratio is given by " conduction ratio gives " potentiometer regulation, and when the switch is in automatic control mode, conduction ratio is by PID Temperature controller or PLC program according to the deviation automatic control and adjustment of temperature, so as to realize automatically controlling for temperature;Led during normal work Logical ratio changes between 15~85%.

Claims (4)

1. a kind of discrete multianode bell-jar ion nitriding furnace, including the bell-jar body of heater and ion for being provided with air inlet and gas outlet The pulse power;The bell-jar body of heater by base of furnace body, the furnace tube being arranged on the base of furnace body, bonnet, by insulate branch Seat is arranged on the cathode disc composition of the bottom of furnace body;It is characterized in that:The body of heater is combined and constituted by bonnet and more piece furnace tube; The bonnet and often section furnace tube furnace wall put by the outer wall of water cooling sandwich structure, inwall, heat screen and aura successively from the outside to the core Electric anode composition;Bonnet and often section furnace tube the glow discharge anode it is separate, each glow discharge anode respectively with institute State the cathode output end of the corresponding cathode output end connection of ion pulse power supply, the body of heater negative electrode and ion pulse power supply Connection, often bonnet and the outer wall electrical grounding of section furnace tube;Thermocouple is provided with bonnet and the often furnace wall of section furnace tube.
2. discrete multianode bell-jar ion nitriding furnace according to claim 1, it is characterised in that:The ion pulse electricity Source includes that three-phase rectifier transformer, two three-phase half-controlled bridge-type circuits by phase-shift trigger circuit control trigger angle, LC are filtered Accumulator, chopper unit;The primary side winding of the three-phase rectifier transformer is connected with 380V/50Hz three-phase alternating-current supplies, Vice-side winding is two groups of three-phase windings, is connected by Yny0/y6 connections respectively, and vice-side winding described in every group is respectively with corresponding one The individual three-phase half-controlled bridge-type rectification circuit input end connection, with institute after the three-phase half-controlled bridge-type rectification circuit series connection described in two State LC filtering energy storage circuit input end connections, output end and multiple chopper lists parallel with one another of LC filtering accumulators First input connection, the cathode output end of each chopper unit is connected with the corresponding one glow discharge anode respectively; The input control end of the phase-shift trigger circuit is connected with the output control terminal of pi regulator, the signal input of the pi regulator End is connected with the signal output part of voltage Setting signal and voltage sensor, and signal input part and the LC of the voltage sensor are filtered The output end connection of ripple accumulator.
3. discrete multianode bell-jar ion nitriding furnace according to claim 2, it is characterised in that:The chopper unit By copped wave and buffer circuit, insulated gate bipolar transistor IGBT drive circuit, pwm control circuit, manually or PID temperature controllers, Beat arc signal acquisition module and over-current signal acquisition module composition;The cathode output end of the copped wave and buffer circuit with it is corresponding The cathode output end of one glow discharge anode connection, copped wave and buffer circuit is connected with the body of heater negative electrode, copped wave and The input of buffer circuit is connected with the output end of LC filtering accumulators;The arc signal acquisition module of beating is with buffering electricity The fly-wheel diode two ends connection on road, the signal of over-current signal acquisition module takes from Hall current sensor SHA, beats arc signal and adopt Collection module, over-current signal acquisition module, the control signal output and the pwm control circuit of the manual or PID temperature controllers Signal input part connection, the signal output part of pwm control circuit is by IGBT drive circuit and chopper unit switch element The control end connection of insulated gate bipolar transistor IGBT, the signal input part and a corresponding heat of manual or PID temperature controllers Galvanic couple signal is connected.
4. discrete multianode bell-jar ion nitriding furnace according to claim 3, it is characterised in that:The copped wave and buffering Circuit is by insulated gate bipolar transistor IGBT and hollow inductor Lk1Constitute;The collection of the insulated gate bipolar transistor IGBT Electrode C-terminal is connected with the output end of LC filtering accumulators, buffer resistance R26, buffering electric capacity C24, catching diode D11 Discharge and recharge type buffer circuit is constituted, described buffering electric capacity C24 one end connects with the colelctor electrode C-terminal of insulated gate bipolar transistor IGBT Connect and the other end is connected with one end of the catching diode D11 anodes and the buffer resistance R26, buffer resistance R26's is another One end, the negative electrode of catching diode D11 are connected with the emitter E end of insulated gate bipolar transistor IGBT;Resistance R25, electric capacity C23, diode D10 constitute electric discharge prevention type buffer circuit, and insulated gate is connected to after the electric capacity C23, diode D10 series connection Between the colelctor electrode C-terminal of bipolar transistor IGBT and emitter E end, the anode of diode D10 through the resistance R25 with it is described Power cathode is connected;The emitter E end of insulated gate bipolar transistor IGBT is by by resistance R29 and current limliting hollow inductor Lk1 The series circuit of composition is connected with a corresponding glow discharge anode, is exported at it and Hall current sensor is housed on line SHA, diode D12, resistance R29 and current limliting hollow inductor Lk1Composition hollow inductance energy Releasing loop.
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111850457A (en) * 2020-07-29 2020-10-30 扬州大学 Controllable surface nitriding device and using method thereof
CN117144286A (en) * 2023-06-01 2023-12-01 南京华尔泰传动科技有限公司 Gear tooth surface nitriding treatment equipment

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