CN106929796A - Discrete multianode bell-jar ion nitriding furnace - Google Patents
Discrete multianode bell-jar ion nitriding furnace Download PDFInfo
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- CN106929796A CN106929796A CN201710310512.1A CN201710310512A CN106929796A CN 106929796 A CN106929796 A CN 106929796A CN 201710310512 A CN201710310512 A CN 201710310512A CN 106929796 A CN106929796 A CN 106929796A
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- bell
- output end
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- 238000005121 nitriding Methods 0.000 title claims abstract description 28
- 238000001816 cooling Methods 0.000 claims abstract description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 4
- 239000000872 buffer Substances 0.000 claims description 36
- 238000001914 filtration Methods 0.000 claims description 16
- 238000004804 winding Methods 0.000 claims description 12
- 239000000203 mixture Substances 0.000 claims description 11
- 230000003139 buffering effect Effects 0.000 claims description 9
- 210000004899 c-terminal region Anatomy 0.000 claims description 9
- 230000010363 phase shift Effects 0.000 claims description 8
- 230000005611 electricity Effects 0.000 claims description 6
- KRQUFUKTQHISJB-YYADALCUSA-N 2-[(E)-N-[2-(4-chlorophenoxy)propoxy]-C-propylcarbonimidoyl]-3-hydroxy-5-(thian-3-yl)cyclohex-2-en-1-one Chemical compound CCC\C(=N/OCC(C)OC1=CC=C(Cl)C=C1)C1=C(O)CC(CC1=O)C1CCCSC1 KRQUFUKTQHISJB-YYADALCUSA-N 0.000 claims description 5
- 238000004146 energy storage Methods 0.000 claims description 4
- 230000002265 prevention Effects 0.000 claims description 3
- 238000010009 beating Methods 0.000 claims description 2
- 230000008901 benefit Effects 0.000 abstract description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000009194 climbing Effects 0.000 description 2
- 230000009514 concussion Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000001052 transient effect Effects 0.000 description 2
- 230000002929 anti-fatigue Effects 0.000 description 1
- 210000001367 artery Anatomy 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000001537 neural effect Effects 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 238000006396 nitration reaction Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 210000003462 vein Anatomy 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
- C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
- C23C8/36—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases using ionised gases, e.g. ionitriding
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
- C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
- C23C8/08—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases only one element being applied
- C23C8/24—Nitriding
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Furnace Details (AREA)
- Solid-Phase Diffusion Into Metallic Material Surfaces (AREA)
Abstract
The invention discloses a kind of discrete multianode bell-jar ion nitriding furnace, including bell-jar body of heater and ion pulse power supply；Bell-jar body of heater is made up of base of furnace body, furnace tube, bonnet, the cathode disc that is arranged on by insulated leg bottom of furnace body；Body of heater is combined and constituted by bonnet and more piece furnace tube；Bonnet and often section furnace tube furnace wall be made up of the outer wall of water cooling sandwich structure, inwall, heat screen and glow discharge anode successively from the outside to the core；The glow discharge anode of bonnet and often section furnace tube is separate, the cathode output end connection corresponding with ion pulse power supply respectively of each glow discharge anode, body of heater negative electrode is connected with the cathode output end of ion pulse power supply, bonnet and often the outer wall electrical grounding of section furnace tube；Thermocouple is provided with bonnet and the often furnace wall of section furnace tube.The invention has the advantages that effectively improving the temperature homogeneity during longaxones parts ionic nitriding, it is ensured that the quality of longaxones parts ionic nitriding.
Description
Technical field
The present invention relates to bell-jar ion nitriding furnace, more particularly, to discrete multianode bell-jar ion nitriding furnace.
Background technology
Glow discharge nitriding because nitriding speed is fast, case hardness is high, fragility is small, it is antifatigue, deform small, energy-conserving and environment-protective etc.
Advantage is widely used in accurate key member Surface hardened layer, such as gear, axle, screw rod, machine part, mould, metallurgical machinery
Deng.
During ionic nitriding, the current density of workpiece surface glow discharge is uneven, generally 0.5 ~ 5 mA/
cm2, electric current distribution feature is：It is big near the lower current density of cathode disc and top is smaller.The electric current of glow discharge is close
Degree is relevant with many factors such as gas pressure, gas ingredients, temperature, surface conductivity, Anode-cathode Distance.
Non-uniform temperature is determined by the heating and radiating feature of glow discharge nitriding part during glow discharge nitriding.When part exists
When the heat and dispersed heat obtained in unit interval are lucky equal at a certain temperature, the temperature is just equilibrium temperature；And
Non-uniform temperature is that part equilibrium temperature everywhere is different.
Glow discharging heating includes three kinds of energy conversions, electric energy → ion, the heat energy of the kinetic energy → part of neutral atom.Cause
The size of this current density is that part obtains the how many outstanding feature of heat.Electric discharge is mainly determined by cathode fall area, but is gone back
It is limited by the influence of following factor：
1st, Anode-cathode Distance：When the timing of cathode voltage one, cathode fall are relatively low, the energy of ion and neural gas particles is smaller,
The temperature of part is relatively low.Anode-cathode Distance is different, piece surface current density everywhere be also it is discrepant, this difference with
The increase of furnace pressure and increase；When Anode-cathode Distance is more greatly different, or furnace pressure it is higher when, this influence factor is often to cause temperature
The uneven main cause of degree.
2nd, gas componant is uneven：When directly making source of the gas with ammonia, because ammonia is progressively ionized in flow process in stove
Decompose, so the gas phase composition in stove from top to bottom is gradually changed.
3rd, gas flowing is uneven：The flow velocity difference that gas flows through piece surface can cause partial pressure and gas density
Fluctuation, this will result in the fluctuation of current density.
4th, on part due to aura overlap, current density increase causes so-called aura to concentrate to groove, aperture, these
Place is heated up quickly, and it is normally local that temperature will be above aura.
5th, influence of " form effect " of part to temperature：On the equally distributed part of aura, different parts or one
The surface area of the different parts of part is different from weight ratio.Surface area is big with weight ratio, it is meant that what it was obtained adds
Thermal energy is more, and these places are heated up comparatively fast, and also the specific surface area part small with weight ratio is high for finally stabilised equilibrium temperature.
In sum, the factor of influence ion nitriding furnace temperature uniformity is a lot, interacts, intricate.And nitriding
When piece surface temperature uniformity everywhere be the key factor for ensureing nitriding layer quality and Reducing distortion, for major axis class zero
Part nitriding, temperature low energy high differs tens degree of even upper Baidu when serious, causes the upper and lower hardness of longaxones parts to have height to have low,
Nitriding layer is deep mixed, deforms overproof.
The content of the invention
Present invention aim at a kind of discrete multianode bell-jar ion nitriding furnace is provided, to improve existing major axis class zero
The upper and lower temperature unevenness produced during part ionic nitriding, solves nitration case hardness, the depth difference of major axis class nitridation part
Larger problem.
To achieve the above object, the present invention takes following technical proposals：
Discrete multianode bell-jar ion nitriding furnace of the present invention, including be provided with air inlet and gas outlet bell-jar body of heater and
Ion pulse power supply；The bell-jar body of heater by base of furnace body, the furnace tube being arranged on the base of furnace body, bonnet, by exhausted
Edge bearing is arranged on the cathode disc composition of bottom of furnace body；The body of heater is combined by bonnet and more piece furnace tube and constituted；The bonnet
With every furnace wall for saving furnace tube from the outside to the core successively by the outer wall of water cooling sandwich structure, inwall, heat screen and glow discharge anode unit
Into；Bonnet and often section furnace tube the glow discharge anode it is separate, each glow discharge anode respectively with the ion arteries and veins
The corresponding cathode output end connection of power supply is rushed, the body of heater negative electrode is connected with the cathode output end of ion pulse power supply, stove
Cover and often the outer wall electrical grounding of section furnace tube；Thermocouple is provided with bonnet and the often furnace wall of section furnace tube.
The ion pulse power supply controls two three of trigger angle including three-phase rectifier transformer, by phase-shift trigger circuit
Phase half-controlled bridge type circuit, LC filtering accumulator, chopper unit；The primary side winding of the three-phase rectifier transformer intersects with three
Stream power supply connection, secondary is two groups of three-phase windings, is connected by Yny0/y6 connections respectively, vice-side winding described in every group respectively with
A corresponding three-phase half-controlled bridge-type rectification circuit input end connection, the three-phase half-controlled bridge-type rectification circuit string described in two
Be connected with LC filtering energy storage circuit input ends after connection, the output end of LC filtering accumulators is parallel with one another with multiple described
Chopper unit input is connected, and the cathode output end of each chopper unit is positive with corresponding one glow discharge respectively
Pole connects；The input control end of the phase-shift trigger circuit is connected with the output control terminal of pi regulator, the pi regulator
Signal input part is connected with the signal output part of voltage Setting signal and voltage sensor, the signal input of the voltage sensor
Hold and be connected with the output end of LC filtering accumulators.
The chopper unit is by copped wave and buffer circuit, IGBT drive circuit, pwm control circuit circuit, manual or PID
Temperature controller, beat arc signal acquisition module and over-current signal acquisition module composition；The copped wave and the cathode output end of buffer circuit
With the corresponding one glow discharge anode connection, the cathode output end of copped wave and buffer circuit connects with the body of heater negative electrode
Connect, the input of copped wave and buffer circuit is connected with the output end of LC filtering accumulators；It is described to beat arc signal acquisition mould
Block is connected with the fly-wheel diode two ends of buffer circuit, and the signal of over-current signal acquisition module takes from Hall current sensor, beats
Arc signal acquisition module, over-current signal acquisition module, the signal output part of the manual or PID temperature controllers are controlled with the PWM
The signal input part connection of circuit, the signal output part of pwm control circuit is switched by IGBT drive circuit with chopper unit
The control end connection of element insulating grid bipolar transistor IGBT, the signal input part and corresponding of manual or PID temperature controllers
Individual thermocouple signal connection.
The copped wave and buffer circuit are main by insulated gate bipolar transistor IGBT and air-core reactor Lk1Constitute；It is described
The colelctor electrode C-terminal of insulated gate bipolar transistor IGBT is connected with the output end of LC filtering accumulators, buffer resistance
R26, buffering electric capacity C24, catching diode D11 constitute discharge and recharge type buffer circuit, described buffering electric capacity C24 one end and insulated gate
The colelctor electrode C-terminal connection of bipolar transistor IGBT, and the other end and the catching diode D11 anodes and the buffer resistance
One end connection of R26, the other end of buffer resistance R26 and the negative electrode and insulated gate bipolar transistor of catching diode D11
The emitter E end connection of IGBT；Using the clamped transient voltages of fast diode D11, concussion can be suppressed and occurred；RC time constants are
The 1/3 of switch periods, to ensure to buffer the peak voltage energy absorbed on electric capacity C24 in each switch periods by buffering electricity
Resistance R26 bleeds off；
Resistance R25, electric capacity C23, diode D10 constitute electric discharge prevention type buffer circuit, can suppress to turn off surge voltage, delay
Rush loss and the very little of circuit；Insulated gate bipolar transistor IGBT is connected to after the electric capacity C23, diode D10 series connection
Between colelctor electrode C-terminal and emitter E end, the anode of diode D10 is connected through the resistance R25 with the power cathode；
Diode D9 is fly-wheel diode, for absorbing the back-pressure formed due to distributed inductance in output loading loop, electric capacity
C22 and resistance R24 composition resistance capaciting absorpting circuits carry out overvoltage protection to diode D9 two ends；
Arc, anode and cathode short circuit are played in order to suppress the climbing of electric current and appearance after insulated gate bipolar transistor IGBT is turned on now
As when, can have sufficient detection time, current limliting of having connected in the loop hollow inductor Lk1；In order in discharging each cycle
Conducting phase current limliting hollow inductor Lk1In stored energy, there is provided being released by the electric current that diode D12, resistance R29 are constituted
Road is put back to, resistance R29 is the power resistor of resistance very little, current limliting hollow inductor L is bled off in each pulse periodk1In energy
Amount；By current limliting hollow inductor Lk1Element suppresses the current-rising-rate of insulated gate bipolar transistor IGBT, realizes to insulation
The overcurrent protection of grid bipolar transistor IGBT；
The emitter E end of insulated gate bipolar transistor IGBT is by by resistance R29, current limliting hollow inductor Lk1The electricity of series connection
Road connects with a corresponding glow discharge anode, equipped with Hall current sensor SHA to electric current on its output anode main line
Signal is acquired.
The advantage of the invention is that take the glow discharge anode subregion of the bell-jar ion nitriding furnace is arranged, and
The regulation of glow current density is carried out independently of one another, therefore effectively improves the temperature during longaxones parts ionic nitriding
Degree uniformity, it is ensured that the quality of longaxones parts ionic nitriding.
Brief description of the drawings
Fig. 1 is the structural representation of bell-jar body of heater of the present invention.
Fig. 2 is the schematic block circuit diagram of ion power supply of the present invention.
Fig. 3 is the circuit theory diagrams of ion power supply of the present invention.
Fig. 4 is the circuit theory diagrams of chopper unit of the present invention.
Specific embodiment
Embodiments of the invention are elaborated below in conjunction with the accompanying drawings, the present embodiment is with technical solution of the present invention as preceding
Put and implemented, give detailed implementation method and specific operating process, but protection scope of the present invention is not limited to down
State embodiment.
As shown in figure 1, discrete multianode bell-jar ion nitriding furnace of the present invention, including it is provided with air inlet 1 and outlet
The bell-jar body of heater and ion pulse power supply of mouth 2；Bell-jar body of heater by base of furnace body 3, the furnace tube being arranged on base of furnace body 3,
Bell jar, the cathode disc 5 for being arranged on bottom of furnace body by insulated leg 4 are constituted；Body of heater is by bonnet 6 and more piece furnace tube 7 by O-shaped close
The seal combination of seal 8 is constituted；Bonnet 6 and the often furnace wall of section furnace tube 7 are from the outside to the core successively by the outer wall of water cooling sandwich structure, interior
Wall, heat screen 9, anode canister 10 and anode power transmission rod 11 are constituted, and each anode canister 10 is separate, therefore bonnet 6 and often save stove
Cylinder 7 the current potential of glow discharge anode canister 10 on it is separate, each glow discharge anode canister 10 respectively with ion pulse power supply pair
The cathode output end answered is connected, and cathode disc 5 is connected by cathode rod 12 with the cathode output end of ion pulse power supply, bonnet
6 and often save furnace tube 7 outer wall electrical grounding；Through bonnet 6 and often the furnace wall of section furnace tube 7 is provided with thermocouple 13.
As shown in Figure 2,3, 4, the ion pulse power supply is including three-phase rectifier transformer TM, by phase-shift trigger circuit control
Two three-phase half-controlled bridge-type circuits of trigger angle, LC filtering accumulator, chopper unit 14；Three-phase rectifier transformer TM's
Primary side winding is connected with 380V/50Hz three-phase alternating-current supplies, and vice-side winding is two groups of three-phase windings, respectively by Yny0/y6 connections
Connection, every group of vice-side winding is connected with corresponding three-phase half-controlled bridge-type rectification circuit input end respectively, two three-phase half-controlleds
It is connected with LC filtering energy storage circuit input ends after bridge rectifier series connection, the output end of LC filtering accumulators is mutual with multiple
The input of chopper unit 14 connection in parallel, the number of chopper unit 14 is equal with the quantity of glow discharge anode canister 10,
The cathode output end of each chopper unit 14 is connected with a corresponding anode power transmission rod 11 respectively；Phase-shift trigger circuit it is defeated
Enter control end to be connected with the output control terminal of pi regulator, signal input part and voltage Setting signal and the voltage of pi regulator
The signal output part connection of sensor, the signal input part of voltage sensor is connected with the output end of LC filtering accumulators.
The chopper unit 14 is by copped wave and buffer circuit, IGBT drive circuit, pwm control circuit, manual or PID temperature
Control device, beat arc signal acquisition module and over-current signal acquisition module composition；The cathode output end of copped wave and buffer circuit with it is corresponding
A glow discharge anode 11 connect, the cathode rod 12 that the cathode output end of copped wave and buffer circuit is connected with cathode disc 5 connects
Connect, the input of copped wave and buffer circuit is connected with the output end of LC filtering accumulators；Arc signal acquisition module is beaten with buffering
The fly-wheel diode two ends connection of circuit, the signal of over-current signal acquisition module takes from Hall current sensor, beats arc signal and adopt
Collection module, over-current signal acquisition module, the signal output part and the signal input part of pwm control circuit of manual or PID temperature controllers
Connection, the signal output part of pwm control circuit is by IGBT drive circuit and chopper unit switch element insulated gate bipolar
The control end connection of transistor IGBT, the signal input part of manual or PID temperature controllers is connected with a corresponding thermocouple signal.
As shown in figure 4, the copped wave and buffer circuit are main by insulated gate bipolar transistor IGBT and hollow inductor
Lk1Constitute；The colelctor electrode C-terminal of insulated gate bipolar transistor IGBT is connected with the output end of LC filtering accumulators, buffers
Resistance R26, buffering electric capacity C24, catching diode D11 constitute discharge and recharge type buffer circuit, buffer electric capacity C24 one end and insulated gate
The colelctor electrode C-terminal connection of bipolar transistor IGBT, and the one of the other end and catching diode D11 anodes and buffer resistance R26
End connection, the other end of buffer resistance R26, the transmitting of the negative electrode and insulated gate bipolar transistor IGBT of catching diode D11
Pole E ends connect；Using the clamped transient voltages of fast diode D11, concussion can be suppressed and occurred；RC time constants are switch periods
1/3, to ensure that buffer the peak voltage absorbed on electric capacity C24 is bled off in each switch periods by buffer resistance R26.
Resistance R25, electric capacity C23, diode D10 constitute electric discharge prevention type buffer circuit, can suppress shut-off surge electricity
Pressure, the loss of buffer circuit and very little；Insulated gate bipolar transistor IGBT is connected to after electric capacity C23, diode D10 series connection
Between colelctor electrode C-terminal and emitter E end, the anode of diode D10 is connected through the cathode rod 12 that resistance R25 is connected with cathode disc 5.
Arc, positive and negative extremely short is beaten in order to limit the climbing of electric current and appearance after insulated gate bipolar transistor IGBT conducting
During the phenomenon of road, there can be sufficient detection time, current limliting of having connected in the loop hollow inductor Lk1；In order to discharge current limliting hollow
Inductor Lk1In stored energy, in current limliting hollow inductor Lk1Discharge loop in coupled resistance very little power electricity
Resistance R29 and fast diode D12, constitutes loop, and current limliting hollow inductor L is bled off in each pulse periodk1In energy；Pass through
Current limliting hollow inductor Lk1Element suppresses the current changing rate of insulated gate bipolar transistor IGBT, completes to insulated gate bipolar
The overcurrent protection of transistor IGBT.
The emitter E end of insulated gate bipolar transistor IGBT is by by resistance R29 and current limliting hollow inductor Lk1Composition
Series circuit connected with a corresponding anode rod 11, its export main line on be equipped with Hall current sensor SHA.
Operation principle of the present invention is summarized as follows：
After 380V/50Hz three-phase four-wire systems AC networks is accessed, first pass through three-phase rectifier transformer TM and realize isolating with power network
And transformation, winding connection mode is Yny0/y6 connections, it is possible to reduce the harmonic wave after rectification, adjustment voltage gives, can with open loop or
The output of closed-loop control commutating voltage, accesses phase-shift trigger circuit, then put by final stage after proportional integral regulation comprehensive magnification
Big circuit, the phase shift for driving IGCT T1, T2, T3, T4, T5, T6 turn on, filter and accumulator by Large Copacity flat ripple
Reactor Lt and pulsed capacitance C23 is constituted, and makes voltage steady and energy storage, and filtered DC voltage accesses multiple parallel with one another
Chopper unit 14.
The control mode of chopper unit 14 is fixed frequency modulated PWM control, and the control of conduction ratio manual open-loop regulation or can pass through
The output signal of PID temperature controllers realizes that closed loop is adjusted.
The thermocouple 13 in each area provides temperature signal in body of heater, and arc signal, chopper circuit output are beaten in buffer circuit collection
End collection over-current signal, sends into pwm control circuit, when there is arc light（Beat arc）When electric discharge or excessively stream, body of heater yin, yang electrode current
Rise, voltage declines, voltage reduction signal up to the pulse width that current period is closed or reduced during certain value is taken, to ion power supply
Protected；When beating arc and being violent, when electric current rises to certain value, the signal measured by Hall current sensor SHA, shut-off
The drive signal of insulated gate bipolar transistor IGBT, so as to realize protection.Pwm control signal is transferred to by light-coupled isolation
IGBT drive circuit, controls the discharge and recharge of insulated gate bipolar transistor IGBT grid G, and there is IGBT drive circuit excessively stream to protect
The defencive functions such as shield, drop grid voltage soft switching.
The negative pole of each chopper unit is negative electrode common port, with the equipotential of workpiece in stove 15；Each chopper unit
Positive pole accesses a corresponding glow discharge anode canister 10, because each glow discharge anode 10 is separate, therefore the He of bonnet 6
Often the glow discharge anode canister 10 of section furnace tube 7 is separate, and body of heater workspace is divided into multiple glow discharge field areas, each
The current density in region can be with separately adjustable, and temperature is individually controlled, and realizes the closed-loop control of each zone temperature.
Manual/auto selecting switch decides the control mode of PID temperature controllers, when the switch is in MANUAL CONTROL mode
When, conduction ratio is given by " conduction ratio gives " potentiometer regulation, and when the switch is in automatic control mode, conduction ratio is by PID
Temperature controller or PLC program according to the deviation automatic control and adjustment of temperature, so as to realize automatically controlling for temperature；Led during normal work
Logical ratio changes between 15~85%.
Claims (4)
1. a kind of discrete multianode bell-jar ion nitriding furnace, including the bell-jar body of heater and ion for being provided with air inlet and gas outlet
The pulse power；The bell-jar body of heater by base of furnace body, the furnace tube being arranged on the base of furnace body, bonnet, by insulate branch
Seat is arranged on the cathode disc composition of the bottom of furnace body；It is characterized in that：The body of heater is combined and constituted by bonnet and more piece furnace tube；
The bonnet and often section furnace tube furnace wall put by the outer wall of water cooling sandwich structure, inwall, heat screen and aura successively from the outside to the core
Electric anode composition；Bonnet and often section furnace tube the glow discharge anode it is separate, each glow discharge anode respectively with institute
State the cathode output end of the corresponding cathode output end connection of ion pulse power supply, the body of heater negative electrode and ion pulse power supply
Connection, often bonnet and the outer wall electrical grounding of section furnace tube；Thermocouple is provided with bonnet and the often furnace wall of section furnace tube.
2. discrete multianode bell-jar ion nitriding furnace according to claim 1, it is characterised in that：The ion pulse electricity
Source includes that three-phase rectifier transformer, two three-phase half-controlled bridge-type circuits by phase-shift trigger circuit control trigger angle, LC are filtered
Accumulator, chopper unit；The primary side winding of the three-phase rectifier transformer is connected with 380V/50Hz three-phase alternating-current supplies,
Vice-side winding is two groups of three-phase windings, is connected by Yny0/y6 connections respectively, and vice-side winding described in every group is respectively with corresponding one
The individual three-phase half-controlled bridge-type rectification circuit input end connection, with institute after the three-phase half-controlled bridge-type rectification circuit series connection described in two
State LC filtering energy storage circuit input end connections, output end and multiple chopper lists parallel with one another of LC filtering accumulators
First input connection, the cathode output end of each chopper unit is connected with the corresponding one glow discharge anode respectively；
The input control end of the phase-shift trigger circuit is connected with the output control terminal of pi regulator, the signal input of the pi regulator
End is connected with the signal output part of voltage Setting signal and voltage sensor, and signal input part and the LC of the voltage sensor are filtered
The output end connection of ripple accumulator.
3. discrete multianode bell-jar ion nitriding furnace according to claim 2, it is characterised in that：The chopper unit
By copped wave and buffer circuit, insulated gate bipolar transistor IGBT drive circuit, pwm control circuit, manually or PID temperature controllers,
Beat arc signal acquisition module and over-current signal acquisition module composition；The cathode output end of the copped wave and buffer circuit with it is corresponding
The cathode output end of one glow discharge anode connection, copped wave and buffer circuit is connected with the body of heater negative electrode, copped wave and
The input of buffer circuit is connected with the output end of LC filtering accumulators；The arc signal acquisition module of beating is with buffering electricity
The fly-wheel diode two ends connection on road, the signal of over-current signal acquisition module takes from Hall current sensor SHA, beats arc signal and adopt
Collection module, over-current signal acquisition module, the control signal output and the pwm control circuit of the manual or PID temperature controllers
Signal input part connection, the signal output part of pwm control circuit is by IGBT drive circuit and chopper unit switch element
The control end connection of insulated gate bipolar transistor IGBT, the signal input part and a corresponding heat of manual or PID temperature controllers
Galvanic couple signal is connected.
4. discrete multianode bell-jar ion nitriding furnace according to claim 3, it is characterised in that：The copped wave and buffering
Circuit is by insulated gate bipolar transistor IGBT and hollow inductor Lk1Constitute；The collection of the insulated gate bipolar transistor IGBT
Electrode C-terminal is connected with the output end of LC filtering accumulators, buffer resistance R26, buffering electric capacity C24, catching diode D11
Discharge and recharge type buffer circuit is constituted, described buffering electric capacity C24 one end connects with the colelctor electrode C-terminal of insulated gate bipolar transistor IGBT
Connect and the other end is connected with one end of the catching diode D11 anodes and the buffer resistance R26, buffer resistance R26's is another
One end, the negative electrode of catching diode D11 are connected with the emitter E end of insulated gate bipolar transistor IGBT；Resistance R25, electric capacity
C23, diode D10 constitute electric discharge prevention type buffer circuit, and insulated gate is connected to after the electric capacity C23, diode D10 series connection
Between the colelctor electrode C-terminal of bipolar transistor IGBT and emitter E end, the anode of diode D10 through the resistance R25 with it is described
Power cathode is connected；The emitter E end of insulated gate bipolar transistor IGBT is by by resistance R29 and current limliting hollow inductor Lk1
The series circuit of composition is connected with a corresponding glow discharge anode, is exported at it and Hall current sensor is housed on line
SHA, diode D12, resistance R29 and current limliting hollow inductor Lk1Composition hollow inductance energy Releasing loop.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111850457A (en) * | 2020-07-29 | 2020-10-30 | 扬州大学 | Controllable surface nitriding device and using method thereof |
| CN117144286A (en) * | 2023-06-01 | 2023-12-01 | 南京华尔泰传动科技有限公司 | Gear tooth surface nitriding treatment equipment |
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| CN111850457A (en) * | 2020-07-29 | 2020-10-30 | 扬州大学 | Controllable surface nitriding device and using method thereof |
| CN111850457B (en) * | 2020-07-29 | 2022-04-22 | 扬州大学 | Controllable surface nitriding device and using method thereof |
| CN117144286A (en) * | 2023-06-01 | 2023-12-01 | 南京华尔泰传动科技有限公司 | Gear tooth surface nitriding treatment equipment |
| CN117144286B (en) * | 2023-06-01 | 2024-03-26 | 南京华尔泰传动科技有限公司 | Gear tooth surface nitriding treatment equipment |
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