CN106927834A - The tri compound sintering aid formula of highly heat-conductive carbon/ceramic ceramic chip is prepared for production - Google Patents
The tri compound sintering aid formula of highly heat-conductive carbon/ceramic ceramic chip is prepared for production Download PDFInfo
- Publication number
- CN106927834A CN106927834A CN201710272820.XA CN201710272820A CN106927834A CN 106927834 A CN106927834 A CN 106927834A CN 201710272820 A CN201710272820 A CN 201710272820A CN 106927834 A CN106927834 A CN 106927834A
- Authority
- CN
- China
- Prior art keywords
- ceramic
- tri compound
- sintering aid
- conductive carbon
- prepared
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
- C04B35/63—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B using additives specially adapted for forming the products, e.g.. binder binders
- C04B35/6303—Inorganic additives
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
- C04B35/581—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on aluminium nitride
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/64—Burning or sintering processes
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/96—Properties of ceramic products, e.g. mechanical properties such as strength, toughness, wear resistance
- C04B2235/9607—Thermal properties, e.g. thermal expansion coefficient
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Structural Engineering (AREA)
- Organic Chemistry (AREA)
- Ceramic Products (AREA)
Abstract
The invention discloses the tri compound sintering aid that highly heat-conductive carbon/ceramic ceramic chip is prepared for production, its innovative point is:The tri compound sintering aid is by Al2O3、Y2O3With CaO compositions, its mol ratio is 25:230:89.The present invention is by using Al2O3、Y2O3With CaO tri compound sintering aids, thermal conductivity high is obtained at a relatively low sintering temperature, reducing energy consumption reduces production cost, improves production efficiency.
Description
Technical field
The present invention relates to sintering aid, and in particular to production prepares the composite sintering agent of highly heat-conductive carbon/ceramic ceramic chip.
Background technology
Requirement of the development of modern science and technology to material is increasingly improved, with component in electronic device and electronic installation
Complexity and intensive increasingly improve, requirement higher is proposed to the ceramic substrate as integrated circuit mainstay,
It is asked to possess good heat conductivility.For a long time, the baseplate material of most high-power hydrid integrated circuits is adopted always
Al2O3With BeO ceramics.But Al2O3The thermal conductivity of ceramics is low, and thermal coefficient of expansion is less matched with Si;Although BeO ceramics have
Excellent combination property, but its production cost higher and its application is seriously constrained the shortcomings of containing severe toxicity.Therefore,
Gradually reflect that the two can not fully meet the need of hyundai electronicses power device development in terms of performance, cost and environment etc.
Will.
Aluminium nitride ceramics has thermal conductivity high, low dielectric Changshu, the thermal coefficient of expansion matched with Si, good exhausted
Edge, thermo-chemical stability be good, it is nontoxic the advantages of the optimal selection as high density integrated circuit baseplate material.But aluminium nitride
Ceramics belong to the presence of the various defects such as covalent compound, self-diffusion coefficient very little, it is difficult to densified sintering product, and impurity to its thermal conductivity
Rate also has very big infringement.
Pure aluminium nitride powder is difficult densified sintering product under common sintering temperature, and consistency material not high is difficult tool
There is thermal conductivity high.Fine and close, high performance aluminium nitride ceramics is generally obtained using following three approach:1) superfine powder is used;2)
Hot pressing or HIP sintering;3) sintering aid is introduced.First approach is influenceed than larger by powder, and business aluminum nitride powder is usual
Requirement cannot be met, and superfine powder easily aoxidizes, reunites;Article 2 approach can only the simple aluminium nitride ceramics material of sintered shape
Material, and energy consumption is big;Industrially it is easily achieved, and is possible to obtain the aluminium nitride ceramics material of low-cost and high-performance.
The content of the invention
The technical problem to be solved in the present invention is to provide the tri compound for preparing highly heat-conductive carbon/ceramic ceramic chip for production and helps burning
Agent, can promote aluminium nitride ceramics to be densified, and improve thermal conductivity.
In order to solve the above technical problems, the technical solution adopted by the present invention is:
The tri compound sintering aid of highly heat-conductive carbon/ceramic ceramic chip is prepared for production, its innovative point is:The tri compound
Sintering aid is by Al2O3、Y2O3Constituted with CaO.
Except Y2O3Outside CaO independent roles, the second Grain-Boundary Phase of generation is improved or protected with sintering temperature in not wet face state
Warm time lengthening, Grain-Boundary Phase will be to surface migration, so as to purify crystal boundary, improving thermal conductivity inside sintered body.
Y2O3Drive oxygen ability strong, good stability, with Al2O3React generation the second crystalline phase, reduce aluminum nitride particle surface and
Oxygen impurities content in lattice, perfection of lattice is protected while improving sintered body thermal conductivity.
CaO can form liquid phase with oxidation reactive aluminum at a lower temperature, promote aluminium nitride ceramics densification.
React the Y of generation3Al5O12And Ca3Y2O6Grain boundaries are deposited on, the oxygen defect in aluminum nitride grain is reduced, so that
Improve thermal conductivity.
Further, the Al2O3、Y2O3It is 25 with the mol ratio of CaO:230:89.
By controlling mol ratio, impurity content in course of reaction is reduced, improve thermal conductivity.
Beneficial effects of the present invention:The present invention is by using Al2O3、Y2O3With CaO tri compound sintering aids, relatively low
Thermal conductivity high is obtained under sintering temperature, reducing energy consumption reduces production cost, improves production efficiency.
Specific embodiment
Technical scheme is elaborated with reference to specific embodiment.
Embodiment 1
The composition that the tri compound sintering aid of highly heat-conductive carbon/ceramic ceramic chip is prepared for production is Al2O3、Y2O3And CaO, it rubs
You are than being 25:230:89.Sintering temperature is 1580 DEG C, soaking time 3 hours, and the conductance for obtaining is 170W/mk.
Embodiment 2
The composition that the tri compound sintering aid of highly heat-conductive carbon/ceramic ceramic chip is prepared for production is Al2O3、Y2O3And CaO, it rubs
You are than being 25:230:89.Sintering temperature is 1620 DEG C, soaking time 3 hours, and the conductance for obtaining is 173W/mk.
Comparative example 1
The sintering aid of embodiment 1 is changed to Y2O3, sintering temperature is 1580 DEG C, soaking time 3 hours, the conductance for obtaining
It is 152W/mk.
Comparative example 2
The sintering aid of embodiment 2 is changed to CaO, sintering temperature is 1620 DEG C, soaking time 3 hours, the conductance for obtaining
It is 147W/mk.
Above-described embodiment is merely illustrative of the technical solution of the present invention, rather than design of the invention and protection domain are carried out
Limit, one of ordinary skill in the art modifies or equivalent to technical scheme, without deviating from technology
The objective and scope of scheme, it all should cover in scope of the presently claimed invention.
Claims (3)
1. the tri compound sintering aid of highly heat-conductive carbon/ceramic ceramic chip is prepared for production, it is characterised in that:The tri compound helps burning
Agent is by Al2O3、Y2O3Constituted with CaO.
2. the tri compound sintering aid that highly heat-conductive carbon/ceramic ceramic chip is prepared for production according to claim 1, its feature exists
In:The Al2O3、Y2O3It is 25 with the mol ratio of CaO:230:89.
3. the tri compound sintering aid that highly heat-conductive carbon/ceramic ceramic chip is prepared for production according to claim 2, its feature exists
In:The Al2O3、Y2O3It is 25 with the mol ratio of CaO:80:89.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710272820.XA CN106927834A (en) | 2017-04-24 | 2017-04-24 | The tri compound sintering aid formula of highly heat-conductive carbon/ceramic ceramic chip is prepared for production |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710272820.XA CN106927834A (en) | 2017-04-24 | 2017-04-24 | The tri compound sintering aid formula of highly heat-conductive carbon/ceramic ceramic chip is prepared for production |
Publications (1)
Publication Number | Publication Date |
---|---|
CN106927834A true CN106927834A (en) | 2017-07-07 |
Family
ID=59438010
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201710272820.XA Pending CN106927834A (en) | 2017-04-24 | 2017-04-24 | The tri compound sintering aid formula of highly heat-conductive carbon/ceramic ceramic chip is prepared for production |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN106927834A (en) |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103755358A (en) * | 2013-12-30 | 2014-04-30 | 莱鼎电子材料科技有限公司 | Ternary composite sintering aid for preparing high thermal conductivity ceramic substrate |
CN104829238A (en) * | 2015-04-02 | 2015-08-12 | 朱卫 | Ternary composite burning aid for preparation of high-thermal conductivity ceramic substrate |
CN106187216A (en) * | 2016-07-13 | 2016-12-07 | 南通中兴多元复合钢管有限公司 | The tri compound sintering aid of highly heat-conductive carbon/ceramic ceramic chip is prepared for production |
-
2017
- 2017-04-24 CN CN201710272820.XA patent/CN106927834A/en active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103755358A (en) * | 2013-12-30 | 2014-04-30 | 莱鼎电子材料科技有限公司 | Ternary composite sintering aid for preparing high thermal conductivity ceramic substrate |
CN104829238A (en) * | 2015-04-02 | 2015-08-12 | 朱卫 | Ternary composite burning aid for preparation of high-thermal conductivity ceramic substrate |
CN106187216A (en) * | 2016-07-13 | 2016-12-07 | 南通中兴多元复合钢管有限公司 | The tri compound sintering aid of highly heat-conductive carbon/ceramic ceramic chip is prepared for production |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN103553691A (en) | Particle dispersion toughening aluminum nitride ceramic substrate and preparation method thereof | |
CN107399974A (en) | A kind of method added fluoride and prepare high heat conduction silicon nitride ceramics | |
CN102093083B (en) | Preparation method for ablation-resistant coating made of carbon/carbon composite material HfC | |
CN104098336A (en) | Method for preparing high-thermal-conductivity high-strength silicon nitride ceramic | |
CN111196727B (en) | High-thermal-conductivity silicon nitride ceramic material and preparation method thereof | |
CN111285692A (en) | High-thermal-conductivity Si3N4Ceramic and preparation method thereof | |
CN104829238A (en) | Ternary composite burning aid for preparation of high-thermal conductivity ceramic substrate | |
CN103755358A (en) | Ternary composite sintering aid for preparing high thermal conductivity ceramic substrate | |
CN106187216A (en) | The tri compound sintering aid of highly heat-conductive carbon/ceramic ceramic chip is prepared for production | |
CN106927834A (en) | The tri compound sintering aid formula of highly heat-conductive carbon/ceramic ceramic chip is prepared for production | |
CN106631046A (en) | Composite sintering aid for producing aluminum nitride ceramic substrate | |
CN116768637A (en) | Preparation method of high-toughness high-strength high-heat-conductivity silicon nitride ceramic substrate | |
JPS61291480A (en) | Surface treating composition for aluminum nitride base material | |
KR20180058216A (en) | High thermal conductive silicon nitride ceramics substrate with excellent electric isolation | |
JPH0450171A (en) | Preparation of aln sintered product | |
JPS6343346B2 (en) | ||
CN116283305B (en) | Aluminum nitride and boron nitride composite ceramic and preparation method thereof | |
CN113121252B (en) | Preparation method of high-thermal-conductivity SiC-AlN composite ceramic | |
JP2541150B2 (en) | Aluminum nitride sintered body | |
JP2003192445A (en) | Silicon nitride substrate, method of producing the same and silicon nitride substrate having thin film obtained by using the substrate | |
JPH01230481A (en) | Production of sintered aluminum nitride | |
Yue et al. | Effect of Sintering Process on the Mechanical Properties of Silicon Nitride | |
JP4516057B2 (en) | Silicon nitride wiring board and method for manufacturing the same | |
JP3895211B2 (en) | Method for manufacturing silicon nitride wiring board | |
JPS63319266A (en) | Production of aluminum nitride sintered body |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20170707 |
|
WD01 | Invention patent application deemed withdrawn after publication |