CN103755358A - Ternary composite sintering aid for preparing high thermal conductivity ceramic substrate - Google Patents
Ternary composite sintering aid for preparing high thermal conductivity ceramic substrate Download PDFInfo
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- CN103755358A CN103755358A CN201310741490.6A CN201310741490A CN103755358A CN 103755358 A CN103755358 A CN 103755358A CN 201310741490 A CN201310741490 A CN 201310741490A CN 103755358 A CN103755358 A CN 103755358A
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- thermal conductivity
- sintering aid
- high thermal
- ternary composite
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Abstract
The invention discloses a ternary composite sintering aid for preparing a high thermal conductivity ceramic substrate. The ternary composite sintering aid is innovatively characterized by comprising Al2O3, Y2O3 and CaO, wherein the molar ratio of Al2O3 to Y2O3 to CaO is 255:1000:84. By adopting the ternary composite sintering aid comprising Al2O3, Y2O3 and CaO, high thermal conductivity can be obtained at relatively low sintering temperature, the energy consumption is lowered, the production cost is lowered, and the production efficiency is improved.
Description
Technical field
The present invention relates to a kind of sintering agent, be specifically related to a kind of composite sintering agent of manufacture highly heat-conductive carbon/ceramic ceramic chip.
Background technology
The development of modern science and technology improves day by day to the requirement of material, along with complicacy and the intensive of components and parts in electron device and electronic installation improve day by day, to having higher requirement as the ceramic substrate of unicircuit mainstay, require it to possess good heat conductivility.For a long time, the baseplate material of most high-power hybrid integrated circuits adopts Al always
2o
3with BeO pottery.But Al
2o
3the thermal conductivity of pottery is low, and thermal expansivity not too mates with Si; Although BeO pottery has good over-all properties, its higher production cost and contain the shortcomings such as severe toxicity and seriously restricted its application.Therefore, from aspects such as performance, cost and environment, reflect gradually that the two can not meet the needs of hyundai electronics power device development completely.
Aluminium nitride ceramics has high thermal conductivity, low dielectric Changshu, and the advantage such as the thermal expansivity matching with Si, good insulativity, thermo-chemical stability are good, nontoxic becomes the optimal selection of high density integrated circuit baseplate material.But aluminium nitride ceramics belongs to covalent compound, self-diffusion coefficient is very little, is difficult to densified sintering product, and the existence of the various defects such as impurity also has very large infringement to its thermal conductivity.
Pure aluminium nitride powder is difficult to densified sintering product under common sintering temperature, and the material that density is not high is difficult to have high thermal conductivity.Conventionally adopt following three approach to obtain fine and close, high performance aluminium nitride ceramics: 1) to use ultrafine powder; 2) hot pressing or HIP sintering; 3) introduce sintering aid.Article 1, affected by powder larger for approach, and business aluminum nitride powder cannot meet the demands conventionally, and ultrafine powder is easily oxidized, reunites; Article 2 approach can only the simple aluminium nitride ceramics material of sintered shape, and energy consumption is large; Industrial being easy to, realize, and likely obtain the aluminium nitride ceramics material of low-cost and high-performance.
Summary of the invention
The technical problem to be solved in the present invention is to provide a kind of tri compound sintering agent for the production of preparing highly heat-conductive carbon/ceramic ceramic chip, can promote aluminium nitride ceramics densification, improves thermal conductivity.
For solving the problems of the technologies described above, the technical solution used in the present invention is:
For the production of a tri compound sintering agent of preparing highly heat-conductive carbon/ceramic ceramic chip, its innovative point is: described tri compound sintering agent is by Al
2o
3, Y
2o
3form with CaO.
Except Y
2o
3outside CaO independent role, the second Grain-Boundary Phase of generation is not wet face state, with sintering temperature, improves or holding time, and Grain-Boundary Phase will be by sintered compact inside to surface transport, thereby purifies crystal boundary, improves thermal conductivity.
Y
2o
3drive oxygen ability strong, good stability, with Al
2o
3the second crystalline phase that reaction generates, reduces oxygen impurities content in aluminum nitride particle surface and lattice, protects perfection of lattice when improving sintered compact thermal conductivity.
CaO can react with aluminum oxide at a lower temperature and form liquid phase, promotes aluminium nitride ceramics densification.
The Y that reaction generates
3al
5o
12and Ca
3y
2o
6be deposited on grain boundaries, reduced the oxygen defect in aluminum nitride grain, thereby improve thermal conductivity.
Further, described Al
2o
3, Y
2o
3with the mol ratio of CaO be 255:1000:84.
By controlling mol ratio, reduce foreign matter content in reaction process, improve thermal conductivity.
Beneficial effect of the present invention: the present invention is by adopting Al
2o
3, Y
2o
3with CaO tri compound sintering agent, under lower sintering temperature, obtain high thermal conductivity, reduce energy consumption, reduced production cost, improved production efficiency.
Embodiment
Below in conjunction with specific embodiment, technical scheme of the present invention is elaborated.
Embodiment 1
A kind of for the production of prepare highly heat-conductive carbon/ceramic ceramic chip tri compound sintering agent consist of Al
2o
3, Y
2o
3and CaO, its mol ratio is 255:1000:84.Sintering temperature is 1580 ℃, soaking time 3 hours, and the electric conductivity obtaining is 170W/mk.
Embodiment 2
A kind of for the production of prepare highly heat-conductive carbon/ceramic ceramic chip tri compound sintering agent consist of Al
2o
3, Y
2o
3and CaO, its mol ratio is 255:1000:84.Sintering temperature is 1620 ℃, soaking time 3 hours, and the electric conductivity obtaining is 173W/mk.
Comparative example 1
Change the sintering agent of embodiment 1 into Y
2o
3, sintering temperature is 1820 ℃, soaking time 6 hours, and the electric conductivity obtaining is 152 W/mk.
Comparative example 2
Change the sintering agent of embodiment 2 into CaO, sintering temperature is 1720 ℃, soaking time 4 hours, and the electric conductivity obtaining is 147 W/mk.
Above-described embodiment is only in order to illustrate technical scheme of the present invention; but not design of the present invention and protection domain are limited; those of ordinary skill in the art modifies or is equal to replacement technical scheme of the present invention; and not departing from aim and the scope of technical scheme, it all should be encompassed in claim scope of the present invention.
Claims (2)
1. for the production of a tri compound sintering agent of preparing highly heat-conductive carbon/ceramic ceramic chip, it is characterized in that: described tri compound sintering agent is by Al
2o
3, Y
2o
3form with CaO.
2. a kind of tri compound sintering agent for the production of preparing highly heat-conductive carbon/ceramic ceramic chip according to claim 1, is characterized in that: described Al
2o
3, Y
2o
3with the mol ratio of CaO be 255:1000:84.
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CN201310741490.6A CN103755358A (en) | 2013-12-30 | 2013-12-30 | Ternary composite sintering aid for preparing high thermal conductivity ceramic substrate |
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CN201310741490.6A CN103755358A (en) | 2013-12-30 | 2013-12-30 | Ternary composite sintering aid for preparing high thermal conductivity ceramic substrate |
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CN103755358A true CN103755358A (en) | 2014-04-30 |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106187216A (en) * | 2016-07-13 | 2016-12-07 | 南通中兴多元复合钢管有限公司 | The tri compound sintering aid of highly heat-conductive carbon/ceramic ceramic chip is prepared for production |
CN106631046A (en) * | 2016-11-30 | 2017-05-10 | 莱鼎电子材料科技有限公司 | Composite sintering aid for producing aluminum nitride ceramic substrate |
CN106927834A (en) * | 2017-04-24 | 2017-07-07 | 南通博泰美术图案设计有限公司 | The tri compound sintering aid formula of highly heat-conductive carbon/ceramic ceramic chip is prepared for production |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1112039A (en) * | 1997-06-19 | 1999-01-19 | Sumitomo Metal Ind Ltd | Production of aluminum nitride-based sintered material for high heat-irradiating lid |
CN101386539A (en) * | 2008-10-16 | 2009-03-18 | 清华大学 | Aluminium nitride ceramics material and preparation method thereof |
-
2013
- 2013-12-30 CN CN201310741490.6A patent/CN103755358A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1112039A (en) * | 1997-06-19 | 1999-01-19 | Sumitomo Metal Ind Ltd | Production of aluminum nitride-based sintered material for high heat-irradiating lid |
CN101386539A (en) * | 2008-10-16 | 2009-03-18 | 清华大学 | Aluminium nitride ceramics material and preparation method thereof |
Non-Patent Citations (2)
Title |
---|
吴玉彪等: "高导热AlN 陶瓷低温烧结助剂的研究现状", 《中国陶瓷》 * |
陈广乐等: "高导热AlN陶瓷烧结助剂的研究现状", 《现代技术陶瓷》 * |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106187216A (en) * | 2016-07-13 | 2016-12-07 | 南通中兴多元复合钢管有限公司 | The tri compound sintering aid of highly heat-conductive carbon/ceramic ceramic chip is prepared for production |
CN106631046A (en) * | 2016-11-30 | 2017-05-10 | 莱鼎电子材料科技有限公司 | Composite sintering aid for producing aluminum nitride ceramic substrate |
CN106927834A (en) * | 2017-04-24 | 2017-07-07 | 南通博泰美术图案设计有限公司 | The tri compound sintering aid formula of highly heat-conductive carbon/ceramic ceramic chip is prepared for production |
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Application publication date: 20140430 |