CN106926110A - Chemically mechanical polishing end point determination device - Google Patents
Chemically mechanical polishing end point determination device Download PDFInfo
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- CN106926110A CN106926110A CN201710245274.0A CN201710245274A CN106926110A CN 106926110 A CN106926110 A CN 106926110A CN 201710245274 A CN201710245274 A CN 201710245274A CN 106926110 A CN106926110 A CN 106926110A
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- end point
- chemically
- point determination
- mechanical polishing
- plane mirror
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- 238000005498 polishing Methods 0.000 title claims abstract description 60
- 238000001514 detection method Methods 0.000 claims abstract description 21
- 238000000034 method Methods 0.000 claims abstract description 12
- 230000008569 process Effects 0.000 claims abstract description 7
- 239000013078 crystal Substances 0.000 claims abstract description 4
- 238000010586 diagram Methods 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000011514 reflex Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000006978 adaptation Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
- B24B37/013—Devices or means for detecting lapping completion
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
Abstract
The invention discloses one kind chemically mechanical polishing end point determination device, including：Device is used cooperatively with chemically mechanical polishing platform, and window is provided with the polishing disk for chemically-mechanicapolish polishing platform, and device includes：Plane mirror；The rotating shaft of plane mirror is carried, rotating shaft is used to adjust the angle of plane mirror；Light emission module, for sending laser rays, laser rays is irradiated to the crystal column surface on polishing disk via plane mirror by window；Light detection module, for receiving the reflection light via window reception wafer, to determine the terminal of CMP process according to reflection light.The chemically mechanical polishing end point determination device of the embodiment chemically-mechanicapolish polishes the angle of window on the polishing disk of platform by the adjustable laser rays directive of rotating shaft, thus, the controllability of the device is improve, fault-tolerance is applicable to the chemically mechanical polishing platform of different manufacturers.
Description
Technical field
The present invention relates to technical field of semiconductors, more particularly to a kind of chemically mechanical polishing end point determination device.
Background technology
Chemically mechanical polishing (chemical mechanical polishing, abbreviation CMP) needed for IC manufacturing
In equipment, it usually needs be equipped with endpoint detection system (End Point Detector, abbreviation EPD), to increase process window, more
Efficiently control technique.In current CMP system EPD devices operation principle mainly have optics, vortex, drive motor electric current, temperature,
The modes such as product；Most common of which, it is also it is most useful that optical detection mode, it passes through to detect crystal column surface reflected light
Change to track process, judge process endpoint.
Related CMP end point determinations device exports very short parallel lines using laser, is subsequently adding external lens group
Conjunction is dissipated, parallel processing, reaches the laser rays of certain length, then passes through pad by the plane mirror of fixed angle
Window (laser rays is along the side long of window) is irradiated to wafer lower surface, and its reflection light is returned in device by window again
Optical sensor, so as to detect the intensity of reflection laser line, and pass through the intensity of reflection laser line and determine chemically mechanical polishing
The terminal of technique.
However, realize it is of the invention during inventor find correlation technique at least there is problems with：(1) laser
Optical beam path is complicated, easily produces error, and underintegration, cost is high；(2) controllability is poor, and fault-tolerance is small, is only used for
The CMP platforms of fixed type, it is impossible to the CMP platforms of adaptation and other producers；(3) overall dimensions are big, low space utilization.
The content of the invention
The purpose of the present invention is intended at least solve one of above-mentioned technical problem to a certain extent.
Therefore, it is an object of the present invention to propose a kind of chemically mechanical polishing end point determination device.The device passes through
The angle of window, thus, improves the device on the polishing disk of the adjustable laser rays directive chemically mechanical polishing platform of rotating shaft
Controllability, fault-tolerance is applicable to the chemically mechanical polishing platform of different manufacturers.
To reach above-mentioned purpose, the chemically mechanical polishing end point determination device that one aspect of the present invention embodiment is proposed is described
Device is used cooperatively with chemically mechanical polishing platform, and window is provided with the polishing disk of the chemically mechanical polishing platform, described
Device includes：Plane mirror；The rotating shaft of the plane mirror is carried, the rotating shaft is used to adjust the plane mirror
Angle；Light emission module, for sending laser rays, the laser rays is irradiated to via the plane mirror by the window
Crystal column surface on the polishing disk；Light detection module, for receiving the reflection light via wafer described in the window reception,
To determine the terminal of CMP process according to the reflection light.
Chemically mechanical polishing end point determination device according to embodiments of the present invention, by rotating shaft to the angle of plane mirror
It is adjusted, i.e. the angle of window on the polishing disk of platform is chemically-mechanicapolish polished by the adjustable laser rays directive of rotating shaft, by
This, improves the controllability of the device, and fault-tolerance is applicable to the chemically mechanical polishing platform of different manufacturers.
According to one embodiment of present invention, the light emission module is a wordline laser device, a wordline laser device
Laser rays for providing preset length on the predeterminable range apart from a wordline laser device.
According to one embodiment of present invention, a wordline laser device sends laser rays and plane-parallel.
According to one embodiment of present invention, the preset length is more than or equal to 10 millimeters, and is less than or equal to
15 millimeters.
According to one embodiment of present invention, described device also includes：Circuit module, is connected with the smooth detection module,
For being powered to the smooth detection module；
According to one embodiment of present invention, described device uses double layer design structure, the plane mirror, described turn
Axle, the light emission module and the smooth detection module are arranged in ground floor, and the circuit module is arranged on the second layer, described
Way-board is provided between ground floor and the second layer.
According to one embodiment of present invention, described device also includes：Locking member, the locking member is used to pass through
When the plane mirror is adjusted to predetermined angle by the rotating shaft, the rotating shaft is locked, with the fixation plane mirror
Angle.
According to one embodiment of present invention, the smooth detection module is light collection sensor.
According to one embodiment of present invention, described device is placed along the radial direction of the polishing disk.
The additional aspect of the present invention and advantage will be set forth in part in the description, and will partly become from the following description
Obtain substantially, or recognized by practice of the invention.
Brief description of the drawings
The above-mentioned and/or additional aspect of the present invention and advantage will become from the following description of the accompanying drawings of embodiments
Substantially and be readily appreciated that, wherein：
Fig. 1 is the structural representation of chemically mechanical polishing end point determination device according to an embodiment of the invention；
Fig. 2 is the exemplary plot of the top view of chemically mechanical polishing end point determination device according to an embodiment of the invention；
Fig. 3 is the schematic diagram of the laser rays that a wordline laser device forms 15mm at 50mm；
Fig. 4 a are the exemplary plots of the dimension information of oval window；
Fig. 4 b are the exemplary plots that existing apparatus light passes through oval window path；
Fig. 4 c are the exemplary plots that light passes through oval window path in the embodiment device；
Fig. 5 a are the exemplary plots of the dimension information of rectangular window；
Fig. 5 b are exemplary plot of the existing apparatus light by rectangular window path；
Fig. 5 c are the exemplary plots that light passes through rectangular window path in the embodiment device.
Reference：
Plane mirror 1；Rotating shaft 2；Light emission module 3；Window 4；Polishing disk 5；Wafer 6；Light detection module 7；Circuit mould
Block 8；Way-board 9；Shell 10.
Specific embodiment
Embodiments of the invention are described below in detail, the example of the embodiment is shown in the drawings, wherein from start to finish
Same or similar label represents same or similar element or the element with same or like function.Below with reference to attached
It is exemplary to scheme the embodiment of description, it is intended to for explaining the present invention, and be not considered as limiting the invention.
Below with reference to the accompanying drawings the chemically mechanical polishing end point determination device of the embodiment of the present invention is described.
, wherein it is desired to illustrate, the chemically mechanical polishing end point determination device coordinates with chemically mechanical polishing platform and makes
With, chemically-mechanicapolish polish platform polishing disk on be provided with window.
Fig. 1 is the structural representation of chemically mechanical polishing end point determination device according to an embodiment of the invention.
As shown in figure 1, the chemically mechanical polishing end point determination device can include：
Plane mirror 1.
The rotating shaft 2 of the plane mirror 1 is carried, rotating shaft 2 is used to adjust the angle of plane mirror 1.
Light emission module 3 is used to send laser rays, and laser rays is irradiated to polishing disk 5 via plane mirror 1 by window 4
On the surface of wafer 6.
Light detection module 7 is used to receive the reflection light for receiving wafer 6 via window 4, with according to reflection light determinization
Learn the terminal of mechanical polishing process.
That is, the process used cooperatively with chemically mechanical polishing platform in chemically mechanical polishing end point determination device
In, the device can adjust the angle that laser rays injects window 4 by rotating shaft 2, not influenceed to plane mirror distance by window,
So as to be applied to different chemically mechanical polishing platforms.
Wherein, the shape of window 4 can be, for example, oval or rectangle.
In one embodiment of the invention, as shown in figure 1, the device can also include circuit module 8, the circuit module
8 are connected with light detection module 7, for being powered to light detection module 7.
At present, the chemically mechanical polishing end point determination device in correlation technique is designed using tiling, and size is larger, at this
In inventive embodiment, in order to reduce the overall dimensions of chemically mechanical polishing end point determination device, the device uses double layer design
Structure, plane mirror 1, rotating shaft 2, light emission module 3 and light detection module 7 are arranged in ground floor, and circuit module 8 is arranged on
The second layer.
Wherein, as a kind of example, as shown in figure 1, be can be set between ground floor and the second layer have way-board 9, to pass through
Way-board 9 gets up ground floor and second layer interval.
, wherein it is desired to illustrate, the device reduces size, can taper to whole device size using double layer design
15cmX3cmX3cm (X X wide long are high) even more small size.
In an embodiment of the present invention, the device also includes locking member (not shown), and the locking member is used for
When plane mirror 1 being adjusted into predetermined angle by rotating shaft 2, rotating shaft 2 is locked, with the angle of fixed pan speculum 1.
In an embodiment of the present invention, light detection module 7 can be light collection sensor.
Wherein, the exemplary plot of the top view of the chemically mechanical polishing end point determination device, as shown in Fig. 2 10 tables in Fig. 2
Show the shell of the end point determination device.
In one embodiment of the invention, in order to be adjusted to light without external lens combination, light path design is simplified,
Shorten operation, light emission module 3 can be a wordline laser device, and a wordline laser device is used for apart from the pre- of a wordline laser device
If apart from the laser rays of upper offer preset length.
In an embodiment of the present invention, a wordline laser device sends laser rays and plane-parallel.
Because light detection module 7 has the regional extent that light is detected limited, such as light collection sensor is generally 10mmX10mm
Receiving area, also, light energy has loss in transmitting procedure, therefore, in an embodiment of the present invention, the preset length
More than or equal to 10 millimeters (mm), and less than or equal to 15 millimeters.
For example, a wordline laser device forms the schematic diagram of the laser rays of 15mm at 50mm, as shown in Figure 3.
In an embodiment of the present invention, due to the very little wide of window, generally 10mm or so is easy in order to solve laser rays
Penetrate less than window or return to problem less than light detection module, the device by rotating shaft 2 except adjusting plane mirror 1
Outside angle, the device can also be placed along the radial direction of polishing disk 5, so that width of the laser rays intake to window
Side, can cause that the device can carry out angle, reflection light etc. on the side long of window and adjust, and increase adjustable amount, increased
Scalability, the angle of strong applicability plane mirror.
As a kind of example, it is assumed that window is shaped as ellipse, and the exemplary plot of the dimension information of oval window such as schemes
Shown in 4a, the incident ray of laser rays passes through the side long of oval window in existing chemically mechanical polishing end point determination device
Side is injected, and is reflected by wafer, from oval window oral reflex to the schematic diagram of the reflection light for going out, as shown in Figure 4 b, the reality
The end point determination device that will chemically-mechanicapolish polish applied in example is placed along the radial direction of polishing disk 5, and is carrying out chemical machinery
During the end point determination of glossing, the incidence of laser rays is injected by oval window, and is reflected by wafer, from oval window
Oral reflex to the reflection light for going out schematic diagram, shown in 4c.
As a kind of example, it is assumed that window is shaped as rectangle, the exemplary plot of the dimension information of rectangular window, such as Fig. 5 a institutes
Show, the incident ray of laser rays is penetrated by the side side long of rectangular window in existing chemically mechanical polishing end point determination device
Enter, and reflected by wafer, the schematic diagram of the reflection light reflexed to out from rectangular window, as shown in Figure 5 b, in the embodiment
The end point determination device that will chemically-mechanicapolish polish placed along the radial direction of polishing disk 5, and carrying out chemically mechanical polishing work
During the end point determination of skill, the incidence of laser rays is injected by rectangular window, and is reflected by wafer, is reflexed to out from rectangular window
Reflection light schematic diagram, shown in 5c.
The dimension adjustable surplus that can be seen that the embodiment window by Fig. 4 c and Fig. 5 c is greatly increased, and increased this
The scalability of device, improves the applicability of the device.
Chemically mechanical polishing end point determination device according to embodiments of the present invention, by rotating shaft to the angle of plane mirror
It is adjusted, i.e. the angle of window on the polishing disk of platform is chemically-mechanicapolish polished by the adjustable laser rays directive of rotating shaft, by
This, improves the controllability of the device, and fault-tolerance is applicable to the chemically mechanical polishing platform of different manufacturers.
In the description of the invention, it is to be understood that term " " center ", " longitudinal direction ", " transverse direction ", " length ", " width ",
" thickness ", " on ", D score, "front", "rear", "left", "right", " vertical ", " level ", " top ", " bottom " " interior ", " outward ", " up time
The orientation or position relationship of the instruction such as pin ", " counterclockwise ", " axial direction ", " radial direction ", " circumference " be based on orientation shown in the drawings or
Position relationship, is for only for ease of the description present invention and simplifies description, must rather than the device or element for indicating or imply meaning
With specific orientation, with specific azimuth configuration and operation, therefore must be not considered as limiting the invention.
Additionally, term " first ", " second " are only used for describing purpose, and it is not intended that indicating or implying relative importance
Or the implicit quantity for indicating indicated technical characteristic.Thus, define " first ", the feature of " second " can express or
Implicitly include at least one this feature.In the description of the invention, " multiple " is meant that at least two, such as two, three
It is individual etc., unless otherwise expressly limited specifically.
In the present invention, unless otherwise clearly defined and limited, term " installation ", " connected ", " connection ", " fixation " etc.
Term should be interpreted broadly, for example, it may be fixedly connected, or be detachably connected, or integrally；Can be that machinery connects
Connect, or electrically connect；Can be joined directly together, it is also possible to be indirectly connected to by intermediary, can be in two elements
The connection in portion or two interaction relationships of element, unless otherwise clearly restriction.For one of ordinary skill in the art
For, can as the case may be understand above-mentioned term concrete meaning in the present invention.
In the present invention, unless otherwise clearly defined and limited, fisrt feature second feature " on " or D score can be with
It is the first and second feature directly contacts, or the first and second features are by intermediary mediate contact.And, fisrt feature exists
Second feature " on ", " top " and " above " but fisrt feature are directly over second feature or oblique upper, or be merely representative of
Fisrt feature level height is higher than second feature.Fisrt feature second feature " under ", " lower section " and " below " can be
One feature is immediately below second feature or obliquely downward, or is merely representative of fisrt feature level height less than second feature.
In the description of this specification, reference term " one embodiment ", " some embodiments ", " example ", " specifically show
The description of example " or " some examples " etc. means to combine specific features, structure, material or spy that the embodiment or example are described
Point is contained at least one embodiment of the invention or example.In this manual, to the schematic representation of above-mentioned term not
Identical embodiment or example must be directed to.And, the specific features of description, structure, material or feature can be with office
Combined in an appropriate manner in one or more embodiments or example.Additionally, in the case of not conflicting, the skill of this area
Art personnel can be tied the feature of the different embodiments or example described in this specification and different embodiments or example
Close and combine.
Although embodiments of the invention have been shown and described above, it is to be understood that above-described embodiment is example
Property, it is impossible to limitation of the present invention is interpreted as, one of ordinary skill in the art within the scope of the invention can be to above-mentioned
Embodiment is changed, changes, replacing and modification.
Claims (9)
1. it is a kind of to chemically-mechanicapolish polish end point determination device, it is characterised in that described device coordinates with chemically mechanical polishing platform
Use, window is provided with the polishing disk of the chemically mechanical polishing platform, described device includes：
Plane mirror；
The rotating shaft of the plane mirror is carried, the rotating shaft is used to adjust the angle of the plane mirror；
Light emission module, for sending laser rays, the laser rays is irradiated to via the plane mirror by the window
Crystal column surface on the polishing disk；
Light detection module, for receiving the reflection light via wafer described in the window reception, with according to the reflection light
Determine the terminal of CMP process.
2. it is as claimed in claim 1 to chemically-mechanicapolish polish end point determination device, it is characterised in that the light emission module is one
Word line laser device, a wordline laser device is used to provide preset length on the predeterminable range apart from a wordline laser device
Laser rays.
3. it is as claimed in claim 2 to chemically-mechanicapolish polish end point determination device, it is characterised in that a wordline laser device hair
The laser rays and plane-parallel for going out.
4. chemically mechanical polishing end point determination device as claimed in claim 2, it is characterised in that the preset length be more than or
Person is equal to 10 millimeters, and less than or equal to 15 millimeters.
5. it is as claimed in claim 1 to chemically-mechanicapolish polish end point determination device, it is characterised in that described device also includes：
Circuit module, is connected with the smooth detection module, for being powered to the smooth detection module.
6. it is as claimed in claim 5 to chemically-mechanicapolish polish end point determination device, it is characterised in that described device is set using bilayer
Meter structure, the plane mirror, the rotating shaft, the light emission module and the smooth detection module are arranged in ground floor,
The circuit module is arranged on the second layer, and way-board is provided between the ground floor and the second layer.
7. it is as claimed in claim 1 to chemically-mechanicapolish polish end point determination device, it is characterised in that described device also includes：
Locking member, the locking member is used for when the plane mirror is adjusted into predetermined angle by the rotating shaft,
The rotating shaft is locked, with the angle of the fixation plane mirror.
8. the chemically mechanical polishing end point determination device as described in claim any one of 1-7, it is characterised in that the light detection
Module is light collection sensor.
9. the chemically mechanical polishing end point determination device as described in claim any one of 1-7, it is characterised in that described device edge
The radial direction for the polishing disk is placed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710245274.0A CN106926110A (en) | 2017-04-14 | 2017-04-14 | Chemically mechanical polishing end point determination device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710245274.0A CN106926110A (en) | 2017-04-14 | 2017-04-14 | Chemically mechanical polishing end point determination device |
Publications (1)
| Publication Number | Publication Date |
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| CN106926110A true CN106926110A (en) | 2017-07-07 |
Family
ID=59437415
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
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| CN201710245274.0A Pending CN106926110A (en) | 2017-04-14 | 2017-04-14 | Chemically mechanical polishing end point determination device |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108555771A (en) * | 2018-04-25 | 2018-09-21 | 清华大学 | The terminal of CMP tool determines that method, terminal determine system and CMP system |
| CN110549240A (en) * | 2019-09-18 | 2019-12-10 | 清华大学 | End point detection method and chemical mechanical polishing device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20010027131A (en) * | 1999-09-10 | 2001-04-06 | 윤종용 | Apparatus for performing chemical and mechanical polishing in semiconductor processing |
| US20020127950A1 (en) * | 2000-10-18 | 2002-09-12 | Takenori Hirose | Method of detecting and measuring endpoint of polishing processing and its apparatus and method of manufacturing semiconductor device using the same |
| US20030207651A1 (en) * | 2002-05-06 | 2003-11-06 | Seung-Kon Kim | Polishing endpoint detecting method, device for detecting a polishing endpoint of a polishing process and chemical-mechanical polishing apparatus comprising the same |
| KR20060058915A (en) * | 2004-11-26 | 2006-06-01 | 삼성전자주식회사 | Chemical mechanical polishing apparatus having dual end point detector |
| CN206653253U (en) * | 2017-04-14 | 2017-11-21 | 天津华海清科机电科技有限公司 | Chemically-mechanicapolish polish end point determination device |
-
2017
- 2017-04-14 CN CN201710245274.0A patent/CN106926110A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20010027131A (en) * | 1999-09-10 | 2001-04-06 | 윤종용 | Apparatus for performing chemical and mechanical polishing in semiconductor processing |
| US20020127950A1 (en) * | 2000-10-18 | 2002-09-12 | Takenori Hirose | Method of detecting and measuring endpoint of polishing processing and its apparatus and method of manufacturing semiconductor device using the same |
| US20030207651A1 (en) * | 2002-05-06 | 2003-11-06 | Seung-Kon Kim | Polishing endpoint detecting method, device for detecting a polishing endpoint of a polishing process and chemical-mechanical polishing apparatus comprising the same |
| KR20060058915A (en) * | 2004-11-26 | 2006-06-01 | 삼성전자주식회사 | Chemical mechanical polishing apparatus having dual end point detector |
| CN206653253U (en) * | 2017-04-14 | 2017-11-21 | 天津华海清科机电科技有限公司 | Chemically-mechanicapolish polish end point determination device |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108555771A (en) * | 2018-04-25 | 2018-09-21 | 清华大学 | The terminal of CMP tool determines that method, terminal determine system and CMP system |
| CN110549240A (en) * | 2019-09-18 | 2019-12-10 | 清华大学 | End point detection method and chemical mechanical polishing device |
| CN110549240B (en) * | 2019-09-18 | 2020-12-29 | 清华大学 | End point detection method and chemical mechanical polishing device |
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Address after: 300350, Tianjin City, Jinnan District Science and Technology Park, Hai Hing Road, No. 9, building No. 8 Applicant after: Huahaiqingke Co.,Ltd. Applicant after: TSINGHUA University Address before: 300350, Tianjin City, Jinnan District Science and Technology Park, Hai Hing Road, No. 9, building No. 8 Applicant before: HWATSING TECHNOLOGY Co.,Ltd. Applicant before: TSINGHUA University |
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Application publication date: 20170707 |